|
WSI-related Publications for year:
A close look on single quantum dots
Journal of Chemical Physics 112, 7790-7798 (2000)
A. Zrenner | A New Tool for Studying Phase Coherent Phenomena in Quantum Dots
Springer Lecture Notes in Physics 547, 35 (2000)
R. H. Blick, A. Holleitner, H. Qin, F. Simmel, A. V. Ustinov, K. Eberl, J. P. Kotthaus | A self-consistent-charge density-functional based tight-binding method for predictive materials simulations in physics, chemistry and biology
phys. stat. sol. (b) 217, 41-62 (2000)
T. Frauenheim, G. Seifert, M. Elstner, Z. Hajnal, G. Jungnickel, D. Porezag, S. Suhai, R. Scholz | Admittance spectroscopy of Ge quantum dots in Si
Thin Solid Films 380, 227-229 (2000)
T. Asperger, C. Miesner, K. Brunner, G. Abstreiter | Aims and purpose of the 216. WE-Heraeus Seminar
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 177 1 3-3 (2000)
J. A. Schaefer, R. Schlogl, M. Stutzmann | AlGaN-based ultraviolet light detectors with integrated optical filters
JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B 18 2 757-760 (2000)
U. Karrer, A. Dobner, O. Ambacher, M. Stutzmann | Breakdown of Shubnikov-de Haas oscillations in a short-period 1D lateral superlattice
Physica E 6, 561-564 (2000)
R. A. Deutschmann, A. Lorke, W. Wegscheider, M. Bichler, G. Abstreiter | Bridging the gap with cleaved edge overgrowth superlattics: on minigaps, magnetic breakdown and quantum interference in artificial bandstructures
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
R. A. Deutschmann, W. Wegscheider, C. Albrecht, J. H. Smet, M. Rother, M. Bichler | Calculation of electronic states in semiconductor heterostructures with an empirical spds* tight-binding model
phys. stat. sol. (b) 217, 449-60 (2000)
R. Scholz, J. M. Jancu, F. Beltram, F. Bassani | Capacitance-voltage and admittance spectrocopy of self-assembled Ge islands in Si
Appl. Phys. Lett. 77, 2704-2706 (2000)
C. Miesner, T. Asperger, K. Brunner, G. Abstreiter | Capacitance-voltage profiling of deuterium passivation and diffusion in diamond Schottky diodes
DIAMOND AND RELATED MATERIALS 9 3-6 413-416 (2000)
R. Zeisel, C. E. Nebel, M. Stutzmann | |
| Characterization of InGaN thin films using high-resolution x-ray diffraction
Appl. Phys. Lett. 76, 577-579 (2000)
L. Gorgens, O. Ambacher, M. Stutzmann, C. Miskys, F. Scholz, J. Off | Circular photogalvanic effect in p-GaAs/AlGaAs MQW
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
S. D. Ganichev, E. L. Ivchenko, H. Ketterl, L. E. Vorobjev, M. Bichler, W. Wegscheider, W. Prettl | Collapse of the excitonic states at rs = 8 in high quality GaAs/AlGaAs single quantum wells
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
S. I. Gubarev, I. V. Kukushkin, S. V. Tovstonog, M. Y. Akimov, L. V. Kulik, J. Smet, K. V. Klitzing, W. Wegscheider | Computational issues in the simulation of semiconductor quantum wires
Computer Methods in Applied Mechanics and Engineering 181, 437 (2000)
A. Trellakis, U. Ravaioli | Computer simulation of materials at atomic level
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 217 1 3-3 (2000)
M. Stutzmann | Conductance quantization in an array of ballistic constrictions
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
S. D. Haan, A. Lorke, J. P. Kotthaus, W. Wegscheider, M. Bichler | Defects in planar Si pn junctions studied with electrically detected magnetic resonance
APPLIED PHYSICS LETTERS 76 16 2280-2282 (2000)
T. Wimbauer, K. Ito, Y. Mochizuki, M. Horikawa, T. Kitano, M. S. Brandt, M. Stutzmann | Differences in vibronic and electronic excitations of PTCDA on Ag(111) and Ag(110)
Surf. Sci. 454-456, 60-6 (2000)
V. Shklover, F. S. Tautz, R. Scholz, S. Sloboshanin, M. Sokolowski, J. A. Schaefer, E. Umbach | Direct observation of hole edge channels in a two-dimensional electron gas
Physica E 6, 230-233 (2000)
A. Zrenner, J. Frankenberger, A. Paassen, A. L. Efros, M. Stopa, M. Bichler, W. Wegscheider | Drag effect between 2D electron gases: composite fermion and screening effects
Physica E 6, 586-589 (2000)
C. Jörger, W. Dietsche, W. Wegscheider, K. V. Klitzing | DX-behavior of Si in AlN
PHYSICAL REVIEW B 61 R16283-R16286 (2000)
R. Zeisel, M. W. Bayerl, S. T. B. Goennenwein, R. Dimitrov, O. Ambacher, M. S. Brandt, M. Stutzmann | |
| Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots
Appl. Phys. Lett. 76, 3507 (2000)
C. Lingk, G. V. Plessen, J. Feldmann, K. Stock, M. Arzberger, M. C. Amann, G. Abstreiter | Effective masses of electrons and holes in SiGe
„Properties of SiGe and SiGe:C“ eds.: E. Kasper 24, 144-148 (2000)
R. Neumann, G. Abstreiter | Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1-xN films
JOURNAL OF APPLIED PHYSICS 87 5 2357-2362 (2000)
A. Cremades, M. Albrecht, J. Krinke, R. Dimitrov, M. Stutzmann, H. P. Strunk | Electron and hole storage in self-assembled InAs quantum dots
Physica E 7, 484-488 (2000)
D. Heinrich, J. Hoffmann, J. J. Finley, A. Zrenner, G. Böhm, G. Abstreiter | Electronic inelastic light scattering in a periodic ?-doping GaAs multiple quantum well structure
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
C. Kristukat, A. R. Goni, S. Rutzinger, W. Wegscheider, G. Abstreiter, C. Thomsen | Epitaxial CaGe2 films on germanium
JOURNAL OF CRYSTAL GROWTH 212 1-2 148-154 (2000)
G. Vogg, M. S. Brandt, M. Stutzmann, I. Genchev, A. Bergmaier, L. Gorgens, G. Dollinger | Evidence of Luttinger liquid behavior in GaAs/AlGaAs quantum wires
Physica E 6, 551-554 (2000)
M. Rother, W. Wegscheider, R. A. Deutschmann, M. Bichler, G. Abstreiter | Explaining the dependences of the hole and electron mobilities in Si inversion layers
IEEE Trans. on Electron Dev. 47 (4), 718-724 (2000)
A. Pirovano, A. L. Lacaita, G. Zandler, R. Oberhuber | Femtosecond spectroscopy of large-momentum excitons in GaAs
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
M. Betz, G. Göger, A. Leitenstorfer, M. Bichler, W. Wegscheider, G. Abstreiter | Fermi level pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5 art. no.-W11.82 (2000)
H. Witte, A. Krtschil, M. Lisker, D. Rudloff, J. Christen, A. Krost, M. Stutzmann, F. Scholz | Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures
SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 353-3 787-790 (2000)
A. Link, O. Ambacher, I. P. Smorchkova, U. K. Mishra, J. S. Speck, M. Stutzmann | |
| GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates
APPLIED PHYSICS LETTERS 77 12 1858-1860 (2000)
C. R. Miskys, M. K. Kelly, O. Ambacher, G. Martinez-Criado, M. Stutzmann | Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si superlattice
Phys. Rev. B 62, 7229-7236 (2000)
J. Stangl, V. Holý, T. Roch, A. Daniel, G. Bauer, J. Zhu, K. Brunner, G. Abstreiter | Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy
JOURNAL OF CRYSTAL GROWTH 220 4 341-344 (2000)
A. P. Lima, C. R. Miskys, U. Karrer, O. Ambacher, A. Wenzel, B. Rauschenbach, M. Stutzmann | Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations
Phys. Rev. 62, 11029-11037 (2000)
M. Arzberger, M. C. Amann | Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations
Physical Review B 62, 11029-11037 (2000)
M. Arzberger, M. C. Amann | Hysteresis and first-order phase transition in the two-dimensional electron gas
Physica E 6, 108-111 (2000)
V. Piazza, V. Pellegrini, F. Beltram, W. Wegscheider, M. Bichler, T. Jung | Hysteresis, spin transitions, and magnetic ordering in the fractional quantum Hall effect
Physica E 6, 18-21 (2000)
H. Cho, W. Kang, K. L. Campman, A. C. Gossard, M. Bichler, W. Wegscheider | Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
APPLIED PHYSICS LETTERS 77 13 2012-2014 (2000)
U. Karrer, O. Ambacher, M. Stutzmann | Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
SOLID-STATE ELECTRONICS 44 8 1361-1365 (2000)
R. Dimitrov, V. Tilak, W. Yeo, B. Green, H. Kim, J. Smart, E. Chumbes, J. R. Shealy, W. Schaff, L. F. Eastman, C. Miskys, O. Ambacher, M. Stutzmann | Influence of short range ordering on roughness of (AlGa)As interfaces studied with cross sectional scanning tunneling microscopy
Appl. Phys. Lett. 76, 3882 (2000)
T. C. G. Reusch, M. Wenderoth, A. J. Heinrich, K. J. Engel, N. Quaas, K. Sauthoff, R. G. Ulbrich, E. R. Weber, K. Uchida, W. Wegscheider | In-plane gate single electron transistor fabricated by AFM lithography
J. Low Temp. Phys. 118, 333 (2000)
S. Lüscher, A. Fuhrer, R. Held, T. Heinzel, K. Ensslin, W. Wegscheider, M. Bichler | |
| Interference laser crystallization of microcrystalline silicon using asymmetric beam intensities
JOURNAL OF NON-CRYSTALLINE SOLIDS 266 650-653 (2000)
B. Rezek, C. E. Nebel, M. Stutzmann | Intra-valence band photocurrent measurements on Ge quantum dots in Si
Thin Solid Films 380, 180-182 (2000)
C. Miesner, K. Brunner, G. Abstreiter | Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si
Appl. Phys. Lett. 76, 1027-1029 (2000)
C. Miesner, O. Röthig, K. Brunner, G. Abstreiter | Investigation of conductance fluctuations in quantum wires fabricated by cleaved edge overgrowth
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
F. Ertl, M. Rother, W. Wegscheider, R. A. Deutschmann, M. Bichler, G. Abstreiter | Large transconductance oscillations in a single-well vertical Aharonov-Bohm interferometer
Phys. Rev. B 62, R10630 (2000)
V. Piazza, F. Beltram, W. Wegscheider, C. T. Liang, M. Pepper | Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
Appl. Phys. Lett. 76, 1944-1946 (2000)
L. Chu, A. Zrenner, G. Böhm, G. Abstreiter | Local laser induced rapid thermal oxidation of SOI substrates
Appl. Surface Science 168, 204-207 (2000)
M. Huber, R. A. Deutschmann, R. Neumann, K. Brunner, G. Abstreiter | Local photoconductivity correlation with granular structure of microcrystalline silicon thin films
JOURNAL OF NON-CRYSTALLINE SOLIDS 266 315-318 (2000)
B. Rezek, C. E. Nebel, M. Stutzmann | Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers
Jpn. J. Appl. Phys. 39, 1727-1729 (2000)
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M. C. Amann | Low-resistance InGa(Al)As tunnel junctions for long-wavelength vertical-cavity surface-emitting lasers
IEEE Photonics Technology Letters 39, 1727 (2000)
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M. C. Amann | Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction
Electronics Lett. 36, 87-88 (2000)
M. Arzberger, M. Lohner, G. Böhm, M. C. Amann | |
| Magnetic resonance investigations of defects in (GaN)-N-14 and (GaN)-N-15
JOURNAL OF APPLIED PHYSICS 88 6 3249-3253 (2000)
M. W. Bayerl, N. M. Reinacher, H. Angerer, O. Ambacher, M. S. Brandt, M. Stutzmann | Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy
Appl. Phys. Lett. 77, 4169-4171 (2000)
C. M. A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter | Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance
PHYSICAL REVIEW LETTERS 84 22 5188-5191 (2000)
S. T. B. Goennenwein, M. W. Bayerl, M. S. Brandt, M. Stutzmann | Mid-infrared photocurrent measurements on self-assembled Ge dots in Si
Physica E 7, 146-150 (2000)
C. Miesner, O. Röthig, K. Brunner, G. Abstreiter | Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures
Phys. Rev. B. 62, 7289 (2000)
C. Strahberger, P. Vogl | Monte Carlo Study of the Dynamic Breakdown Effects in HEMT's
IEEE Electron Device Letters 21 (4), 149-151 (2000)
A. D. Carlo, L. Rossi, P. Lugli, G. Zandler, G. Meneghesso, M. Jackson, E. Zanoni | Multi-exciton spectroscopy on a self-assembled InGaAs/GaAs quantum dot
Physica E 7, 354-358 (2000)
F. Findeis, A. Zrenner, M. Markmann, G. Böhm, G. Abstreiter | Negative differential resistance of a 2D electron gas in a 1D miniband
Physica E 7, 294-298 (2000)
R. A. Deutschmann, W. Wegscheider, M. Rother, M. Bichler, G. Abstreiter | Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon
JOURNAL OF NON-CRYSTALLINE SOLIDS 266 237-241 (2000)
S. T. B. Goennenwein, M. W. Bayerl, M. S. Brandt, M. Stutzmann | Norm-conserving pseudopotentials in the exact exchange Kohn-Sham formalism
J. Phys. Condensed Matter 12, 6783 (2000)
M. Moukara, M. Städele, J. A. Majewski, P. Vogl, A. Görling, Code is available, contact Peter Vogl | Novel nitride devices based on polarization fields
phys. stat. sol. (a) 179, 285 (2000)
J. A. Majewski, G. Zandler, P. Vogl | |
| Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
JOURNAL OF APPLIED PHYSICS 88 6 3470-3478 (2000)
G. Martinez-Criado, A. Cros, A. Cantarero, R. Dimitrov, O. Ambacher, M. Stutzmann | Optical charging of self-assembled InAs quantum dots
in: Optical Properties of Semiconductor Nanostructures, Eds.: M. L. Sadowski, M. Potemski, and M. Grynberg, Kluwer Academic Publishers, Dordrecht, page 365 (2000)
D. Heinrich, J. Finley, M. Skalitz, J. Hoffmann, A. Zrenner, G. Böhm, G. Abstreiter | Optical properties of T-shaped quantum wire lasers
Phys. Stat. Sol. (a) 178, 227-231 (2000)
L. Sorba, G. Schedelbeck, W. Wegscheider, M. Bichler, G. Abstreiter | Optical spectroscopy on a single InGaAs/GaAs quantum dot in the few-exciton limit
Solid state communications 114, 227-230 (2000)
F. Findeis, A. Zrenner, G. Böhm, G. Abstreiter | Optical spectroscopy on a single quantum dot – single electron charging and Stark effect
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
M. Baier, F. Findeis, A. Zrenner, M. Bichler, G. Abstreiter | Optical spectroscopy on single quantum dots
in: Adv. in Sol. State Phys. Vol. 40 40, ed.: B. Kramer (2000)
A. Zrenner, F. Findeis, E. Beham, M. Markmann, G. Böhm, G. Abstreiter | Optically induced charge storage and de-charging in InAs quantum dots
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
D. Heinrich, A. Zrenner, G. Böhm, G. Abstreiter | Optically-induced charge storage in self-assembled InAs quantum dots
Thin Solid Films 380, 192-194 (2000)
D. Heinrich, J. Hoffmann, J. J. Finley, A. Zrenner, G. Böhm, G. Abstreiter | Persistent photocurrents in CVD diamond
DIAMOND AND RELATED MATERIALS 9 3-6 404-407 (2000)
C. E. Nebel, A. Waltenspiel, M. Stutzmann, M. Paul, L. Schafer | Phonon assisted biexciton generation in a single quantum dot
Phys. Rev. B 61, R10579 (2000)
F. Findeis, A. Zrenner, G. Böhm, G. Abstreiter | Phonon assisted biexciton generation in a single quantum dot
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
F. Findeis, A. Zrenner, G. Böhm, G. Abreiter | |
| Phonon modes in SiGe: Raman spectroscopy
in: Properties of Silicon Germanium and SiGe:C, eds.: E. Kasper and K. Lyutovich, EMIS Datareviews Series No. 24, 115 (2000)
K. Brunner | Photoconductivity study of Li doped homoepitaxially grown CVD diamond
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 181 1 45-50 (2000)
R. Zeisel, C. E. Nebel, M. Stutzmann, H. Sternschulte, M. Schreck, B. Stritzker | Photocurrent and resonant Raman spectroscopy on self-assembled In(Ga)As/GaAs quantum dots
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
L. Chu, A. Zrenner, M. Arzberger, G. Böhm, G. Abstreiter | Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy
Appl. Phys. Lett. 77, 546-548 (2000)
A. Krtschil, H. Witte, M. Lisker, J. Christen, A. Krost, U. Birkle, S. Einfeldt, D. Hommel, F. Scholz, J. Off, M. Stutzmann | Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE
Thin solid films 369, 398-401 (2000)
M. Markmann, E. Neufeld, K. Brunner, G. Abstreiter, C. Buchal | Photon-induced Transport through Mesoscopic Structures using Nano-Ploughed Josephson Junctions
Proc. SPIE Vol. 3828 3828, p. 194-199 (2000)
A. Holleitner, F. Simmel, H. Qin, B. Irmer, R. H. Blick, J. P. Kotthaus, K. Eberl
Online Ref | Polygermyne - A prototype system for layered germanium polymers
ADVANCED MATERIALS 12 17 1278-+ (2000)
G. Vogg, M. S. Brandt, M. Stutzmann | Quantum hall ferromagnetism in a two-dimensional electron system
Science 289, 2320 (2000)
J. Eom, H. Cho, W. Kang, K. L. Campman, A. C. Gossard, M. Bichler, W. Wegscheider | Quantum wires as Luttinger liquids: experiment
Adv. in Sol. State Phys. Vol. 40 40, ed.: B. Kramer (2000)
W. Wegscheider, M. Rother, F. Ertl, R. A. Deutschmann, M. Bichler, G. Abstreiter | Raman spectroscopy of In(Ga)As/GaAs quantum dots
Appl. Phys. Lett. 77, 3944-3946 (2000)
L. Chu, A. Zrenner, M. Bichler, G. Böhm, G. Abstreiter | Resonant Raman spectroscopy of 3,4,9,10-perylene-tetracarboxylic-dianhydride epitaxial films
Phys. Rev. B 61, 13659-69 (2000)
R. Scholz, A. Y. Kobitski, T. U. Kampen, M. Schreiber, D. R. T. Zahn, G. Jungnickel, M. Elstner, M. Sternberg, T. Frauenheim | |
| Resonant Raman spectroscopy of organic semiconductors
phys. stat. sol. (b) 221, 541-4 (2000)
R. Scholz, A. Y. Kobitski, T. U. Kampen, M. Schreiber, D. R. T. Zahn, G. Jungnickel, T. Frauenheim | Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfaces
Thin Solid Films 380, 124-126 (2000)
R. Neumann, J. Zhu, K. Brunner, G. Abstreiter | Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates
Physica E 7, 881-886 (2000)
K. Brunner, J. Zhu, C. Miesner, G. Abstreiter, O. Kienzle, F. Ernst | Semiclassical origin of the 2D metallic state in high mobility Si-MOS and Si/SiGe structures
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
G. Brunthaler, A. Prinz, G. Pillwein, G. Bauer, K. Brunner, G. Abstreiter, T. Dietl, V. M. Pudalov | Semiconductor nanostructures with short depletion length and stacked gates, patterned with an atomic force microscope
Physica E 7, 860-863 (2000)
T. M. Heinzel, R. Held, S. Lüscher, K. Ensslin, W. Wegscheider | Shape and size of buried SiGe islands
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
J. Stangl, V. Holý, A. Daniel, T. Roch, G. Bauer, T. H. Metzger, J. Zhu, K. Brunner, G. Abstreiter | Shifting a quantum wire through a disordered crystal: Observation of conductance fluctutions in real space
Phys. Rev. B 61, R13353 (2000)
T. M. Heinzel, G. Salis, R. Held, S. Lüscher, K. Ensslin, W. Wegscheider, M. Bichler | Single crystals of the organic semiconductor perylene-tetracarboxylic-dianhydride studied by Raman spectroscopy
Phys. Rev. B 61, 14564-9 (2000)
D. A. Tenne, S. Park, T. U. Kampen, A. Das, R. Scholz, D. R. T. Zahn | Spatially resolved photocurrent measurements of microstructured a-Si : H solar cells
JOURNAL OF NON-CRYSTALLINE SOLIDS 266 1109-1113 (2000)
C. Eisele, C. E. Nebel, M. Stutzmann | Spectroscopy of single self-assembled quantum dots
Journal of Luminescence 87-89, 35 (2000)
A. Zrenner, F. Findeis, E. Beham, M. Markmann, G. Böhm, G. Abstreiter | Spin effects in the magneto-drag
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
J. G. S. Lok, S. Kraus, M. Pohlt, W. Dietsche, K. V. Klitzing, W. Wegscheider, M. Bichler | |
| Spin pairing in quantum dots with many electrons
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
S. Lüscher, T. Heinzel, K. Ensslin, W. Wegscheider, M. Bichler | Spin-dependent capacitance of silicon field-effect transistors
APPLIED PHYSICS LETTERS 76 11 1467-1469 (2000)
M. S. Brandt, R. T. Neuberger, M. Stutzmann | Spin-dependent exchange and correlation effects on the orbital magnetization of two-dimensional electron systems
Physica E 6, 731-734 (2000)
I. Meinel, D. Grundler, T. Hengstmann, C. Heyn, D. Heitmann, W. Wegscheider, M. Bichler | Spin-dependent processes in amorphous and microcrystalline silicon: a survey
JOURNAL OF NON-CRYSTALLINE SOLIDS 266 1-22 (2000)
M. Stutzmann, M. S. Brandt, M. W. Bayerl | Spin-flip inelastic light scattering of excitations from partially filled Landau level
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
L. V. Kulik, I. V. Kukushkin, V. E. Kirpichev, J. Smet, K. V. Klitzing, W. Wegscheider | Step bunching and correlated SiGe nanostructures on (113) Si
Thin Solid Films 369, 39-42 (2000)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst | STM-photocurrent-spectroscopy on single self-assembled InGaAs quantum dots
Physica E 7, 359-362 (2000)
E. Beham, A. Zrenner, G. Böhm | Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices
J. Vac. Sci. Technol. B 18, 2187 (2000)
J. Stangl, T. Roch, V. Holý, M. Pinczolits, G. Springholz, G. Bauer, I. Kegel, T. H. Metzger, J. Zhu, K. Brunner, G. Abstreiter, D. Smilgies | Structural and optical properties of Si-doped GaN
PHYSICAL REVIEW B 61 4 2812-2818 (2000)
A. Cremades, L. Gorgens, O. Ambacher, M. Stutzmann, F. Scholz | Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy
JOURNAL OF CRYSTAL GROWTH 208 1-4 37-41 (2000)
J. W. Kim, C. S. Son, I. H. Choi, Y. K. Park, Y. T. Kim, O. Ambacher, M. Stutzmann | Studies on impact excitation of Er in Si by hot carriers
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
M. Markmann, A. Sticht, F. Bobe, E. Neufeld, K. Brunner, G. Abstreiter | |
| Substrate influence on the ordering of organic submonolayers: A comparative study of PTCDA on Ag (110) and Ag(111) using HREELS
Appl. Surf. Sci 166, 363-9 (2000)
F. S. Tautz, S. Sloboshanin, V. Shklover, R. Scholz, M. Sokolowski, J. A. Schaefer, E. Umbach | Thermal stability of p-type doped amorphous silicon suboxides
JOURNAL OF NON-CRYSTALLINE SOLIDS 266 840-844 (2000)
R. Janssen, A. Janotta, M. Stutzmann | Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
JOURNAL OF APPLIED PHYSICS 87 1 334-344 (2000)
O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, M. Stutzmann | Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
W. J. Schaff, Phys. 87, 334 (2000)
O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski | Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire
JOURNAL OF APPLIED PHYSICS 87 7 3375-3380 (2000)
R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Ambacher, M. Stutzmann | Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped AlGaN/GaN HETS
COMPOUND SEMICONDUCTORS 1999 166 493-497 (2000)
O. Ambacher, R. Dimitrov, M. Stutzmann, B. Foutz, M. Murphy, J. Smart, J. R. Shealy, N. G. Weimann, L. F. Eastman | Ultrafast dynamics of holes in Si1-xGex/Si multiple quantum wells
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
R. A. Kaindl, M. Wurm, K. Reimann, M. Woerner, T. Elsässer, C. Miesner, K. Brunner, G. Abstreiter | Ultrafast optical spectroscopy of large-momentum excitons in GaAs
Phys. Rev. Lett. 84, 5812-5815 (2000)
G. Göger, M. Betz, A. Leitensdorfer, M. Bichler, W. Wegscheider, G. Abstreiter | Vibrational properties of ultra-thin quasi-epitaxial PTCDA films on Ag(110)
Phys. Rev. B 61, 16933-47 (2000)
F. S. Tautz, S. Sloboshanin, J. A. Schaefer, R. Scholz, M. Sokolowski, V. Shklover, E. Umbach |
|
|
|
Walter Schottky Institut