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WSI-related Publications for year:
X-ray diffraction and reflection from self-assembled Ge-dots
Thin Solid Films 294, 298-299 (1996)
A. A. Darhuber, H. Stangl, G. Bauer, P. Schittenhelm, G. Abstreiter | An efficient multigrid poisson solver for device simulations
IEEE Transactions on CAD of Integrated Circuits and Systems 15, 141 (1996)
M. Saraniti, A. Rein, G. Zandler, P. Vogl, P. Lugli | Anomalous transport and luminescence of indirect excitons in coupled quantum wells
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 3, 1927-1934, Berlin, Germany, July 21-26 (1996)
L. V. Butov | Anomalous Transport of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
Surface Science 361/362, 243-246 (1996)
L. V. Butov, A. Zrenner, M. Hagn, G. Abstreiter, G. Böhm, G. Weimann | Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport
PHYSICAL REVIEW B 54 11 7957-7964 (1996)
G. Kawachi, C. F. O. Graeff, M. S. Brandt, M. Stutzmann | Cellular automata for device simulation - concepts and applications
in: Proc. of the 1996 Int. Conf. on Simulation of Semiconductor Processes and Devices (1996)
G. Zandler, M. Saraniti, A. Rein, P. Vogl | Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells
Phys. Rev. B 54 (3), 1922-1927 (1996)
J. Olajos, J. Engwall, H. G. Grimmeiss, M. Gail, G. Abstreiter, H. Presting, H. Kibbel | Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films
THIN SOLID FILMS 276 1-2 100-103 (1996)
T. Fischer, V. PetrovaKoch, K. Shcheglov, M. S. Brandt, F. Koch | Diffusion Effects and Luminescence in Thin SiGe/Si Layers
Solid State Phenomena Vols 47-48, 473-484 (1996)
M. Gail, W. Jung, J. Brunner, P. Schittenhelm, J. Nuetzel, G. Abstreiter | Direct measurement of exciton diffusion in quantum wells
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 725-728 (1996)
W. Heller, A. Filoramo, P. Roussignol, U. Bockelmann | Dynamics of exciton gases in quantum dots
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 2, 1437-1440, Berlin, Germany, July 21-26 (1996)
U. Bockelmann, A. Filoramo, W. Heller, P. Roussignol | |
| Early stages of growth of self-assembled Ge-rich islands on Si
Proc. of 11th European Congress on Electron Microscopy, Dublin, Aug. 26-30, 1996. Publ.: EUREM’96, U.C.D. Belfield, Dublin 4, Ireland (1996)
D. Meertens, W. Jäger, P. Schittenhelm, G. Abstreiter | Electrically detected magnetic resonance in a-Si:H/a-Ge:H multilayers
JOURNAL OF APPLIED PHYSICS 79 12 9166-9171 (1996)
C. F. O. Graeff, M. Stutzmann, S. Miyazaki | Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes
JOURNAL OF APPLIED PHYSICS 80 8 4541-4547 (1996)
N. M. Reinacher, M. S. Brandt, M. Stutzmann | Electric-field-induced exciton transport in coupled quantum well structures
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 429-431 (1996)
M. Hagn, A. Zrenner, G. Böhm, G. Weimann | Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy
Appl. Phys. Lett. 68 (23), 3290-3292 (1996)
J. Stimmer, A. Reittinger, J. Nuetzel, G. Abstreiter, H. Holzbrecher, C. Buchal | Electronic excitations in quantum wires and dots
Physica B 227, 10-Jun (1996)
G. Abstreiter, R. Strenz, G. Schedelbeck, E. Silveira | Electronic properties of Si/SiGe/Ge heterostructures
Physica Scripta Vol. T68 T68, 68-71 (1996)
G. Abstreiter | Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
MRS Intern. J. Nitride Semicond. Res. 1, 30 (1996)
J. A. Majewski, M. Städele, P. Vogl | Exact exchange potential for semiconductors
in: Proc. 23rd Int. Conference on the Physics of Semiconductors (1996)
M. Städele, J. A. Majewski, P. Vogl, A. Görling | Exciton fine structure in undoped GaN epitaxial film
Phys. Rev. B 53, 16543 (1996)
D. Volm, K. Öttinger, T. Streibl, D. Kovalev, M. Ben-Chorin, J. Diener, B. K. Meyer, J. A. Majewski, L. Eckey, A. Hoffmann, H. Amano, I. Akasaki, K. Hiramatsu, T. Detchprohm | Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's
IEEE Trans. on Elec. Dev. 43, 1769-1777 (1996)
C. Canali, P. Pavan, A. D. Carlo, P. Lugli, R. Malik, M. Manfredi, A. Neviani, L. Vendrame, E. Zanoni, G. Zandler | |
| Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing
Appl. Phys. Lett. 68 (21), 3025-3027 (1996)
M. Holzmann, P. Baumgartner, C. Engel, J. Nuetzel, G. Abstreiter, F. Schäffler | Far-infrared-study of shallow etched quantum wires on high mobility GaAs/AlGaAs heterostructures and quantum-wells
Solid-State Electronics 40 (1-8) (1996)
V. Roßkopf, P. Auer, E. Gornik, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann | Ferromagnetic superexchange in Cr-based diluted magnetic semiconductors
Phys. Rev. B 53, 9524 (1996)
J. Blinowski, P. Kacman, J. A. Majewski | Ferromagnetism in Cr-based diluted magnetic semiconductors
J. Crystal Growth 159, 972 (1996)
J. Blinowski, P. Kacman, J. A. Majewski | Generalized Kohn-Sham schemes and the band gap problem
Phys. Rev. B 53, 3764 (1996)
A. Seidl, A. Görling, P. Vogl, J. A. Majewski, M. Levy | Growth and characterization of self-assembled Ge-rich islands on Si
Semicond. Sci. Technol. 11, 1521-1528 (1996)
G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, W. Jäger | Growth conditions of Erbium-Oxygen-doped Silicon grown by MBE
Mat. Res. Soc. Symp. Proc. Vol. 422 422, 15 (1996)
J. Stimmer, A. Reittinger, G. Abstreiter, H. Holzbrecher, C. Buchal | Growth of GaN/AlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium
JOURNAL OF CRYSTAL GROWTH 167 1-2 1-7 (1996)
O. Ambacher, R. Dimitrov, D. Lentz, T. Metzger, W. Rieger, M. Stutzmann | HEMT models and simulations
in: Pseudomorphic HEMT Technology and Applications, ed. by R. L. Ross, S. .P. Svensson, and P. Lugli, Kluwer Academic Publisher, Dordrecht, The Netherlands (1996)
P. Lugli, M. Paciotti, E. Calleja, E. Munoz, J. L. Sanchez-Rojas, F. Dessene, R. Fauquembergue, J. L. Thobel, G. Zandler | Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures
J. of Raman Spectroscopy Vol. 27 27, 193-200 (1996)
G. Abstreiter | Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
APPLIED PHYSICS LETTERS 68 7 970-972 (1996)
W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, M. Stutzmann | |
| Intersubband relaxation and thermalization of electrons in GaInAs/AlInAs quantum wells studied by femtosecond infrared spectroscopy
Phys. Rev. Lett. 77, 3657 (1996)
S. Lutgen, R. Kaidl, M. Wörner, T. Elsässer, A. Hase, H. Künzel, M. Gulia, D. Meglio, P. Lugli | Intrawell and interwell magnetoexcitons in InxGa1-xAs/GaAs coupled double quantum wells: theory
Phys. Rev. B 53 (24), 16 355-16 364 (1996)
A. B. Dzyubenko, A. L. Yablonskii | Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings
APPLIED PHYSICS LETTERS 68 14 1984-1986 (1996)
M. K. Kelly, C. E. Nebel, M. Stutzmann, G. Bohm | Linewidth and finestructure of optical spectra from single quantum dots
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 2, 1433-1436, Berlin, Germany, July 21-26 (1996)
A. Zrenner, M. Hagn, A. Schaller, G. Abstreiter, G. Böhm, G. Weimann | Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures
Surface Science 361/362, 673-676 (1996)
M. Holzmann, D. Többen, P. Baumgartner, G. Abstreiter, A. Kriele, H. Lorenz, F. Schäffler | Medium-wavelength, normal-incidence, p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K
Appl. Phys. Lett. 69 (22), 3372-3374 (1996)
P. Kruck, M. Helm, T. Fromherz, G. Bauer, J. Nuetzel, G. Abstreiter | Microscopic analysis of intrinsic noise in semiconductor devices by the cellular automaton method
in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors (1996)
A. Rein, G. Zandler, M. Saraniti, P. Vogl | Nitrogen-related dopant and defect states in CVD diamond
PHYSICAL REVIEW B 54 11 7874-7880 (1996)
E. Rohrer, C. F. O. Graeff, R. Janssen, C. E. Nebel, M. Stutzmann, H. Guttler, R. Zachai | On the voltage stability of lateral barriers in in-plane-gated structures
Appl. Phys. Lett. 69 (1), 76-78 (1996)
P. Baumgartner, C. Engel, G. Abstreiter | Optical absorbance of oriented thin films
Synth. Metals 76, Issues 1-3, 177-179 (1996)
A. Niko, F. Meghdadi, G. Leising, C. Ambrosch-Draxl, P. Vogl | Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence
APPLIED SURFACE SCIENCE 102 323-326 (1996)
M. C. Rossi, M. S. Brandt, M. Stutzmann | |
| Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond
APPLIED PHYSICS LETTERS 69 21 3215-3217 (1996)
C. F. O. Graeff, E. Rohrer, C. E. Nebel, M. Stutzmann, H. Guttler, R. Zachai | Optical patterning of GaN films
APPLIED PHYSICS LETTERS 69 12 1749-1751 (1996)
M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann | Optical properties of reactive-ion-etched Si/Si1-xGex heterostructures
J. of Vac. Sci. Technol. B 14 (2), 698-706 (1996)
T. Köster, J. Gondermann, B. Hadam, B. Spangenberg, M. Schütze, H. G. Roskos, H. Kurz, J. Brunner, G. Abstreiter | Optical spectroscopy of single quantum dots
Surface Science 361/362, 756-761 (1996)
A. Zrenner | Oscillatory transport of electrons in GaAs surface - space - charge fields
in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors (1996)
W. Fischler, R. A. Höpfel, G. Zandler | PEMBE-growth of gallium nitride on (0001)sapphire: A comparison to MOCVD grown GaN
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 1 1-46 U112-U116 (1996)
H. Angerer, O. Ambacher, R. Dimitrov, T. Metzger, W. Rieger, M. Stutzmann | Photoluminescence of Erbium-Oxygen-doped Silicon grown by molecular beam epitaxy
Solid State Communications Vol. 100 (5) 100 (5), 321-323 (1996)
J. Stimmer, C. Wetterer, G. Abstreiter | Physik und Technologie von Quantendrähten
In „Niederdimensionale Quantenstrukturen und Materialien für blaue Lichtquellen“. Eds.: A. Schlachetzki and H. Bachmair. PTB Bericht E 53. Wirtschafts, Bremerhaven (1996)
W. Wegscheider | Polarization dependence of intersubband absorption and photoconductivity in p-type SiGe quantum wells
Superlattices and Microstructures Vol. 20 (2) 20 (2), 237-243 (1996)
T. Fromherz, P. Kruck, M. Helm, G. Bauer, J. Nuetzel, G. Abstreiter | Properties of hydrogenated amorphous silicon suboxide alloys with visible room-temperature photoluminescence
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 73 5 799-816 (1996)
M. Zacharias, D. DimovaMalinovska, M. Stutzmann | Pseudomorphic HEMTs: Technology and applications
Kluwer Academic Publisher, Dordrecht, The Netherlands (1996)
S. Swensson, P. Lugli | |
| Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 405-408 (1996)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler | Quenching of the Nonradiative Auger-Recombination in Coupled Quantum Wells
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 3, 1991-1994, Berlin, Germany, July 21-26 (1996)
M. Hagn, A. Zrenner, G. Böhm, G. Weimann | Resonant inelastic light scattering by electronic excitations in tunable quantum wire structures
Surface Science 361/362, 783-787 (1996)
G. Schedelbeck, E. Silveira, R. Strenz, U. Bockelmann, G. Abstreiter, G. Böhm, G. Weimann | RHEED investigations of surface diffusion on Si(001)
Applied Surface Science 102, 78-81 (1996)
J. Nuetzel, P. Brichzin, G. Abstreiter | Room temperature electroluminescence of Erbium-Oxygen-doped Silicon diodes grown by molecular beam epitaxy
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 4, 3945-3048, Berlin, Germany, July 21-26 (1996)
J. Stimmer, A. Reittinger, C. Wetterer, A. Zrenner, G. Abstreiter, H. Holzbrecher, C. Buchal | Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE
Applied Surface Science 102, 327-330 (1996)
M. Jaumann, J. Stimmer, P. Schittenhelm, J. Nuetzel, G. Abstreiter, E. Neufeld, B. Holländer, C. Buchal | Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 763-766 (1996)
P. Kruck, M. Seto, M. Helm, Z. Moussa, P. Boucaud, F. H. Julien, J. M. Lourtioz, J. Nuetzel, G. Abstreiter | Segregation and diffusion on semiconductor surfaces
Phys. Rev. B 53 (20), 13 551-13 558 (1996)
J. Nuetzel, G. Abstreiter | Segregation of n-dopants on SiGe surfaces
Applied Surface Science 102, 98-101 (1996)
J. Nuetzel, M. Holzmann, P. Schittenhelm, G. Abstreiter | Self-consistent tight-binding calculation of electronic and optical properties of semiconductor heterostructures
in: Highlights of light spectroscopy on semiconductors, edited by A. D'andrea, L. G. Quagliano, S. Selci (1996)
A. D. Carlo, S. Pescetelli, M. Paciotti, P. Lugli | Self-consistent tight-binding calculations of electronic and optical properties of semiconductor nanostructures
Solid State Commun. 98, 803-806 (1996)
A. Di Carlo, S. Pescetelli, M. Paciotti, P. Lugli, M. Graf | |
| Self-interaction corrections in semiconductors
Phys. Rev. B 52, 16567 (1996)
M. Rieger, P. Vogl | Single-electron subpicosecond coherent dynamics in KBr F-centers
Phys. Rev. Lett. 77, 3463-6 (1996)
M. Nisoli, S. D. Silvestri, O. Svelto, R. Scholz, R. Fanciulli, V. Pellegrini, F. Beltram, F. Bassani | Spatial Distribution of Electromagnetic Fields of Sub-Wavelength Sized Apertures
No Reference given. (1996)
C. Obermueller, F. Bickel, W. Frank, K. Karraï, F. B. C. Obermueller, K. K. W. Frank, N. 1. 2. Boston, 3. 1996. Vol.1 | Spatially indirect radiative recombination of carriers localized in Si1-x-yGexCy/Si1-yCy double quantum well structure on Si substrates
Appl. Phys. Lett. 69 (9), 1279-1281 (1996)
K. Brunner, W. Winter, K. Eberl | Spin-dependent transport in amorphous silicon thin-film transistors
JOURNAL OF NON-CRYSTALLINE SOLIDS 200 1117-1120 (1996)
C. F. O. Graeff, G. Kawachi, M. S. Brandt, M. Stutzmann, M. J. Powell | Stability and band offsets of SiC/GaN, SiC/AlN, and AlN/GaN heterostructures
in: Proc. 23rd Int. Conference on the Physics of Semiconductors (1996)
A. Majewski, M. Städele, P. Vogl | Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode
Physica B 227, Issues 1-4, 206-209 (1996)
H. Nagasawa, K. Murayama, M. Morifuji, A. Di Carlo, G. Böhm, G. Tränkle, G. Weimann, C. Hamaguchi | Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode
Physica B 227, Issues 1-4, 206-209 (1996)
H. Nagasawa, K. Murayama, M. Morifuji, A. D. Carlo, P. Vogl, G. Böhm, G. Tränkle, G. Weimann, C. Hamaguchi | Strong magnetic field dependence of laser emission from quantum wires formed by cleaved edge overgrowth
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 6-Jan (1996)
W. Wegscheider, L. N. Pfeiffer, K. W. West, P. Littlewood, O. Narayan, M. Hagn, M. M. Dignam, R. E. Leibenguth | Structure and luminescence of SiGe-Si quantum dots and wires from local epitaxy
Proc. of 11th European Congress on Electron Microscopy (1996)
D. Meertens, W. Jäger, K. Urban, J. Brunner, P. Schittenhelm, G. Abstreiter, J. Gondermann, B. Hadam, H. Kurz, T. S. Rupp, H. Gossner, I. Eisele | Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy
SOLID STATE COMMUNICATIONS 97 5 365-370 (1996)
O. Ambacher, W. Rieger, P. Ansmann, H. Angerer, T. D. Moustakas, M. Stutzmann | |
| Sub-micron silicon structures for thin film solar cells
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 194 1 55-67 (1996)
C. E. Nebel, B. Dahlheimer, S. Schoniger, M. Stutzmann | The influence of surface states on in-plane-gated structures
Superlattices and Microstructures 20, No. 4, 587-594 (1996)
P. Baumgartner, C. Engel, G. Abstreiter | The sign of the Hall effect in hydrogenated amorphous and disordered crystalline silicon
PHILOSOPHICAL MAGAZINE LETTERS 74 6 455-463 (1996)
C. E. Nebel, M. Rother, M. Stutzmann, C. Summonte, M. Heintze | Theory of electronic and optical properties of magnetoexcitons in quantum-well wires
Phys. Rev. B 54, 17003 (1996)
M. Graf, P. Vogl, A. B. Dzyubenko | Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B 14 6 3532-3542 (1996)
O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, G. Dollinger | Time and space resolved spectroscopy of single semiconductor quantum dots
Brazilian J. of Physics 26 (1), Vol. 26 (1996)
P. Roussignol, U. Bockelmann, A. Filoramo, W. Heller | Time resolved spectroscopy of single quantum dot structures
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 541-544 (1996)
U. Bockelmann, P. Roussignol, A. Filoramo, W. Heller, G. Abstreiter | Time resolved spectroscopy of single quantum dots: Fermi gas of excitons?
Phys. Rev. Lett. 76 (1996)
U. Bockelmann, P. Roussignol, A. Filoramo, W. Heller, G. Abstreiter, K. Brunner, G. Böhm, G. Weimann | Transport in silicon/germanium nanostructures
Applied Surface Science 102, 230-236 (1996)
M. Holzmann, D. Többen, G. Abstreiter | Transport of two-dimensional excitons in magnetic fields
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 3, 2063-2066, Berlin, Germany, July 21-26 (1996)
A. B. Dzyubenko, P. I. Arseyev | Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells
Appl. Phys. Lett. 68 (1996)
T. Fromherz, P. Kruck, M. Helm, G. Bauer, J. Nuetzel, G. Abstreiter | |
| Ultrafast reflectivity changes in photoexcited GaAs Schottky-diodes
Appl. Phys. Lett. 68, 2778-2780 (1996)
W. Fischler, P. Buchberger, R. A. Höpfel, G. Zandler | Wannier-Stark oscillations in Zener tunneling currents
Solid-State Electronics 40, 245 (1996)
H. Nagasawa, K. Murayama, M. Yamaguchi, M. Morifuji, C. Hamaguchi, A. D. Carlo, P. Vogl, G. Böhm, G. Tränkle, G. Weimann | X-ray diffraction study of gallium nitride grown by MOCVD
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 193 2 391-397 (1996)
T. Metzger, H. Angerer, O. Ambacher, M. Stutzmann, E. Born | Yellow luminescence and hydrocarbon contamination in MOVPE-grown GaN
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 158 2 587-597 (1996)
P. DeMierry, O. Ambacher, H. Kratzer, M. Stutzmann |
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Walter Schottky Institut