Walter Schottky Institute
Center for Nanotechnology and Nanomaterials

WSI-related Publications for year:

X-ray diffraction and reflection from self-assembled Ge-dots
Thin Solid Films 294, 298-299 (1996)
A. A. Darhuber, H. Stangl, G. Bauer, P. Schittenhelm, G. Abstreiter
An efficient multigrid poisson solver for device simulations
IEEE Transactions on CAD of Integrated Circuits and Systems 15, 141 (1996)
M. Saraniti, A. Rein, G. Zandler, P. Vogl, P. Lugli
Anomalous transport and luminescence of indirect excitons in coupled quantum wells
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 3, 1927-1934, Berlin, Germany, July 21-26 (1996)
L. V. Butov
Anomalous Transport of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
Surface Science 361/362, 243-246 (1996)
L. V. Butov, A. Zrenner, M. Hagn, G. Abstreiter, G. Böhm, G. Weimann
Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport
PHYSICAL REVIEW B 54 11 7957-7964 (1996)
G. Kawachi, C. F. O. Graeff, M. S. Brandt, M. Stutzmann
Cellular automata for device simulation - concepts and applications
in: Proc. of the 1996 Int. Conf. on Simulation of Semiconductor Processes and Devices (1996)
G. Zandler, M. Saraniti, A. Rein, P. Vogl
Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells
Phys. Rev. B 54 (3), 1922-1927 (1996)
J. Olajos, J. Engwall, H. G. Grimmeiss, M. Gail, G. Abstreiter, H. Presting, H. Kibbel
Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films
THIN SOLID FILMS 276 1-2 100-103 (1996)
T. Fischer, V. PetrovaKoch, K. Shcheglov, M. S. Brandt, F. Koch
Diffusion Effects and Luminescence in Thin SiGe/Si Layers
Solid State Phenomena Vols 47-48, 473-484 (1996)
M. Gail, W. Jung, J. Brunner, P. Schittenhelm, J. Nuetzel, G. Abstreiter
Direct measurement of exciton diffusion in quantum wells
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 725-728 (1996)
W. Heller, A. Filoramo, P. Roussignol, U. Bockelmann
Dynamics of exciton gases in quantum dots
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 2, 1437-1440, Berlin, Germany, July 21-26 (1996)
U. Bockelmann, A. Filoramo, W. Heller, P. Roussignol
Early stages of growth of self-assembled Ge-rich islands on Si
Proc. of 11th European Congress on Electron Microscopy, Dublin, Aug. 26-30, 1996. Publ.: EUREM’96, U.C.D. Belfield, Dublin 4, Ireland (1996)
D. Meertens, W. Jäger, P. Schittenhelm, G. Abstreiter
Electrically detected magnetic resonance in a-Si:H/a-Ge:H multilayers
JOURNAL OF APPLIED PHYSICS 79 12 9166-9171 (1996)
C. F. O. Graeff, M. Stutzmann, S. Miyazaki
Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes
JOURNAL OF APPLIED PHYSICS 80 8 4541-4547 (1996)
N. M. Reinacher, M. S. Brandt, M. Stutzmann
Electric-field-induced exciton transport in coupled quantum well structures
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 429-431 (1996)
M. Hagn, A. Zrenner, G. Böhm, G. Weimann
Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy
Appl. Phys. Lett. 68 (23), 3290-3292 (1996)
J. Stimmer, A. Reittinger, J. Nuetzel, G. Abstreiter, H. Holzbrecher, C. Buchal
Electronic excitations in quantum wires and dots
Physica B 227, 10-Jun (1996)
G. Abstreiter, R. Strenz, G. Schedelbeck, E. Silveira
Electronic properties of Si/SiGe/Ge heterostructures
Physica Scripta Vol. T68 T68, 68-71 (1996)
G. Abstreiter
Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
MRS Intern. J. Nitride Semicond. Res. 1, 30 (1996)
J. A. Majewski, M. Städele, P. Vogl
Exact exchange potential for semiconductors
in: Proc. 23rd Int. Conference on the Physics of Semiconductors (1996)
M. Städele, J. A. Majewski, P. Vogl, A. Görling
Exciton fine structure in undoped GaN epitaxial film
Phys. Rev. B 53, 16543 (1996)
D. Volm, K. Öttinger, T. Streibl, D. Kovalev, M. Ben-Chorin, J. Diener, B. K. Meyer, J. A. Majewski, L. Eckey, A. Hoffmann, H. Amano, I. Akasaki, K. Hiramatsu, T. Detchprohm
Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's
IEEE Trans. on Elec. Dev. 43, 1769-1777 (1996)
C. Canali, P. Pavan, A. D. Carlo, P. Lugli, R. Malik, M. Manfredi, A. Neviani, L. Vendrame, E. Zanoni, G. Zandler
Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing
Appl. Phys. Lett. 68 (21), 3025-3027 (1996)
M. Holzmann, P. Baumgartner, C. Engel, J. Nuetzel, G. Abstreiter, F. Schäffler
Far-infrared-study of shallow etched quantum wires on high mobility GaAs/AlGaAs heterostructures and quantum-wells
Solid-State Electronics 40 (1-8) (1996)
V. Roßkopf, P. Auer, E. Gornik, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann
Ferromagnetic superexchange in Cr-based diluted magnetic semiconductors
Phys. Rev. B 53, 9524 (1996)
J. Blinowski, P. Kacman, J. A. Majewski
Ferromagnetism in Cr-based diluted magnetic semiconductors
J. Crystal Growth 159, 972 (1996)
J. Blinowski, P. Kacman, J. A. Majewski
Generalized Kohn-Sham schemes and the band gap problem
Phys. Rev. B 53, 3764 (1996)
A. Seidl, A. Görling, P. Vogl, J. A. Majewski, M. Levy
Growth and characterization of self-assembled Ge-rich islands on Si
Semicond. Sci. Technol. 11, 1521-1528 (1996)
G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, W. Jäger
Growth conditions of Erbium-Oxygen-doped Silicon grown by MBE
Mat. Res. Soc. Symp. Proc. Vol. 422 422, 15 (1996)
J. Stimmer, A. Reittinger, G. Abstreiter, H. Holzbrecher, C. Buchal
Growth of GaN/AlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium
JOURNAL OF CRYSTAL GROWTH 167 1-2 1-7 (1996)
O. Ambacher, R. Dimitrov, D. Lentz, T. Metzger, W. Rieger, M. Stutzmann
HEMT models and simulations
in: Pseudomorphic HEMT Technology and Applications, ed. by R. L. Ross, S. .P. Svensson, and P. Lugli, Kluwer Academic Publisher, Dordrecht, The Netherlands (1996)
P. Lugli, M. Paciotti, E. Calleja, E. Munoz, J. L. Sanchez-Rojas, F. Dessene, R. Fauquembergue, J. L. Thobel, G. Zandler
Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures
J. of Raman Spectroscopy Vol. 27 27, 193-200 (1996)
G. Abstreiter
Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
APPLIED PHYSICS LETTERS 68 7 970-972 (1996)
W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, M. Stutzmann
Intersubband relaxation and thermalization of electrons in GaInAs/AlInAs quantum wells studied by femtosecond infrared spectroscopy
Phys. Rev. Lett. 77, 3657 (1996)
S. Lutgen, R. Kaidl, M. Wörner, T. Elsässer, A. Hase, H. Künzel, M. Gulia, D. Meglio, P. Lugli
Intrawell and interwell magnetoexcitons in InxGa1-xAs/GaAs coupled double quantum wells: theory
Phys. Rev. B 53 (24), 16 355-16 364 (1996)
A. B. Dzyubenko, A. L. Yablonskii
Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings
APPLIED PHYSICS LETTERS 68 14 1984-1986 (1996)
M. K. Kelly, C. E. Nebel, M. Stutzmann, G. Bohm
Linewidth and finestructure of optical spectra from single quantum dots
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 2, 1433-1436, Berlin, Germany, July 21-26 (1996)
A. Zrenner, M. Hagn, A. Schaller, G. Abstreiter, G. Böhm, G. Weimann
Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures
Surface Science 361/362, 673-676 (1996)
M. Holzmann, D. Többen, P. Baumgartner, G. Abstreiter, A. Kriele, H. Lorenz, F. Schäffler
Medium-wavelength, normal-incidence, p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K
Appl. Phys. Lett. 69 (22), 3372-3374 (1996)
P. Kruck, M. Helm, T. Fromherz, G. Bauer, J. Nuetzel, G. Abstreiter
Microscopic analysis of intrinsic noise in semiconductor devices by the cellular automaton method
in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors (1996)
A. Rein, G. Zandler, M. Saraniti, P. Vogl
Nitrogen-related dopant and defect states in CVD diamond
PHYSICAL REVIEW B 54 11 7874-7880 (1996)
E. Rohrer, C. F. O. Graeff, R. Janssen, C. E. Nebel, M. Stutzmann, H. Guttler, R. Zachai
On the voltage stability of lateral barriers in in-plane-gated structures
Appl. Phys. Lett. 69 (1), 76-78 (1996)
P. Baumgartner, C. Engel, G. Abstreiter
Optical absorbance of oriented thin films
Synth. Metals 76, Issues 1-3, 177-179 (1996)
A. Niko, F. Meghdadi, G. Leising, C. Ambrosch-Draxl, P. Vogl
Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence
APPLIED SURFACE SCIENCE 102 323-326 (1996)
M. C. Rossi, M. S. Brandt, M. Stutzmann
Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond
APPLIED PHYSICS LETTERS 69 21 3215-3217 (1996)
C. F. O. Graeff, E. Rohrer, C. E. Nebel, M. Stutzmann, H. Guttler, R. Zachai
Optical patterning of GaN films
APPLIED PHYSICS LETTERS 69 12 1749-1751 (1996)
M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, M. Stutzmann
Optical properties of reactive-ion-etched Si/Si1-xGex heterostructures
J. of Vac. Sci. Technol. B 14 (2), 698-706 (1996)
T. Köster, J. Gondermann, B. Hadam, B. Spangenberg, M. Schütze, H. G. Roskos, H. Kurz, J. Brunner, G. Abstreiter
Optical spectroscopy of single quantum dots
Surface Science 361/362, 756-761 (1996)
A. Zrenner
Oscillatory transport of electrons in GaAs surface - space - charge fields
in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors (1996)
W. Fischler, R. A. Höpfel, G. Zandler
PEMBE-growth of gallium nitride on (0001)sapphire: A comparison to MOCVD grown GaN
H. Angerer, O. Ambacher, R. Dimitrov, T. Metzger, W. Rieger, M. Stutzmann
Photoluminescence of Erbium-Oxygen-doped Silicon grown by molecular beam epitaxy
Solid State Communications Vol. 100 (5) 100 (5), 321-323 (1996)
J. Stimmer, C. Wetterer, G. Abstreiter
Physik und Technologie von Quantendrähten
In „Niederdimensionale Quantenstrukturen und Materialien für blaue Lichtquellen“. Eds.: A. Schlachetzki and H. Bachmair. PTB Bericht E 53. Wirtschafts, Bremerhaven (1996)
W. Wegscheider
Polarization dependence of intersubband absorption and photoconductivity in p-type SiGe quantum wells
Superlattices and Microstructures Vol. 20 (2) 20 (2), 237-243 (1996)
T. Fromherz, P. Kruck, M. Helm, G. Bauer, J. Nuetzel, G. Abstreiter
Properties of hydrogenated amorphous silicon suboxide alloys with visible room-temperature photoluminescence
M. Zacharias, D. DimovaMalinovska, M. Stutzmann
Pseudomorphic HEMTs: Technology and applications
Kluwer Academic Publisher, Dordrecht, The Netherlands (1996)
S. Swensson, P. Lugli
Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 405-408 (1996)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Quenching of the Nonradiative Auger-Recombination in Coupled Quantum Wells
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 3, 1991-1994, Berlin, Germany, July 21-26 (1996)
M. Hagn, A. Zrenner, G. Böhm, G. Weimann
Resonant inelastic light scattering by electronic excitations in tunable quantum wire structures
Surface Science 361/362, 783-787 (1996)
G. Schedelbeck, E. Silveira, R. Strenz, U. Bockelmann, G. Abstreiter, G. Böhm, G. Weimann
RHEED investigations of surface diffusion on Si(001)
Applied Surface Science 102, 78-81 (1996)
J. Nuetzel, P. Brichzin, G. Abstreiter
Room temperature electroluminescence of Erbium-Oxygen-doped Silicon diodes grown by molecular beam epitaxy
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 4, 3945-3048, Berlin, Germany, July 21-26 (1996)
J. Stimmer, A. Reittinger, C. Wetterer, A. Zrenner, G. Abstreiter, H. Holzbrecher, C. Buchal
Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE
Applied Surface Science 102, 327-330 (1996)
M. Jaumann, J. Stimmer, P. Schittenhelm, J. Nuetzel, G. Abstreiter, E. Neufeld, B. Holländer, C. Buchal
Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 763-766 (1996)
P. Kruck, M. Seto, M. Helm, Z. Moussa, P. Boucaud, F. H. Julien, J. M. Lourtioz, J. Nuetzel, G. Abstreiter
Segregation and diffusion on semiconductor surfaces
Phys. Rev. B 53 (20), 13 551-13 558 (1996)
J. Nuetzel, G. Abstreiter
Segregation of n-dopants on SiGe surfaces
Applied Surface Science 102, 98-101 (1996)
J. Nuetzel, M. Holzmann, P. Schittenhelm, G. Abstreiter
Self-consistent tight-binding calculation of electronic and optical properties of semiconductor heterostructures
in: Highlights of light spectroscopy on semiconductors, edited by A. D'andrea, L. G. Quagliano, S. Selci (1996)
A. D. Carlo, S. Pescetelli, M. Paciotti, P. Lugli
Self-consistent tight-binding calculations of electronic and optical properties of semiconductor nanostructures
Solid State Commun. 98, 803-806 (1996)
A. Di Carlo, S. Pescetelli, M. Paciotti, P. Lugli, M. Graf
Self-interaction corrections in semiconductors
Phys. Rev. B 52, 16567 (1996)
M. Rieger, P. Vogl
Single-electron subpicosecond coherent dynamics in KBr F-centers
Phys. Rev. Lett. 77, 3463-6 (1996)
M. Nisoli, S. D. Silvestri, O. Svelto, R. Scholz, R. Fanciulli, V. Pellegrini, F. Beltram, F. Bassani
Spatial Distribution of Electromagnetic Fields of Sub-Wavelength Sized Apertures
No Reference given. (1996)
C. Obermueller, F. Bickel, W. Frank, K. Karraï, F. B. C. Obermueller, K. K. W. Frank, N. 1. 2. Boston, 3. 1996. Vol.1
Spatially indirect radiative recombination of carriers localized in Si1-x-yGexCy/Si1-yCy double quantum well structure on Si substrates
Appl. Phys. Lett. 69 (9), 1279-1281 (1996)
K. Brunner, W. Winter, K. Eberl
Spin-dependent transport in amorphous silicon thin-film transistors
C. F. O. Graeff, G. Kawachi, M. S. Brandt, M. Stutzmann, M. J. Powell
Stability and band offsets of SiC/GaN, SiC/AlN, and AlN/GaN heterostructures
in: Proc. 23rd Int. Conference on the Physics of Semiconductors (1996)
A. Majewski, M. Städele, P. Vogl
Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode
Physica B 227, Issues 1-4, 206-209 (1996)
H. Nagasawa, K. Murayama, M. Morifuji, A. Di Carlo, G. Böhm, G. Tränkle, G. Weimann, C. Hamaguchi
Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode
Physica B 227, Issues 1-4, 206-209 (1996)
H. Nagasawa, K. Murayama, M. Morifuji, A. D. Carlo, P. Vogl, G. Böhm, G. Tränkle, G. Weimann, C. Hamaguchi
Strong magnetic field dependence of laser emission from quantum wires formed by cleaved edge overgrowth
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 6-Jan (1996)
W. Wegscheider, L. N. Pfeiffer, K. W. West, P. Littlewood, O. Narayan, M. Hagn, M. M. Dignam, R. E. Leibenguth
Structure and luminescence of SiGe-Si quantum dots and wires from local epitaxy
Proc. of 11th European Congress on Electron Microscopy (1996)
D. Meertens, W. Jäger, K. Urban, J. Brunner, P. Schittenhelm, G. Abstreiter, J. Gondermann, B. Hadam, H. Kurz, T. S. Rupp, H. Gossner, I. Eisele
Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy
O. Ambacher, W. Rieger, P. Ansmann, H. Angerer, T. D. Moustakas, M. Stutzmann
Sub-micron silicon structures for thin film solar cells
C. E. Nebel, B. Dahlheimer, S. Schoniger, M. Stutzmann
The influence of surface states on in-plane-gated structures
Superlattices and Microstructures 20, No. 4, 587-594 (1996)
P. Baumgartner, C. Engel, G. Abstreiter
The sign of the Hall effect in hydrogenated amorphous and disordered crystalline silicon
C. E. Nebel, M. Rother, M. Stutzmann, C. Summonte, M. Heintze
Theory of electronic and optical properties of magnetoexcitons in quantum-well wires
Phys. Rev. B 54, 17003 (1996)
M. Graf, P. Vogl, A. B. Dzyubenko
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, G. Dollinger
Time and space resolved spectroscopy of single semiconductor quantum dots
Brazilian J. of Physics 26 (1), Vol. 26 (1996)
P. Roussignol, U. Bockelmann, A. Filoramo, W. Heller
Time resolved spectroscopy of single quantum dot structures
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 541-544 (1996)
U. Bockelmann, P. Roussignol, A. Filoramo, W. Heller, G. Abstreiter
Time resolved spectroscopy of single quantum dots: Fermi gas of excitons?
Phys. Rev. Lett. 76 (1996)
U. Bockelmann, P. Roussignol, A. Filoramo, W. Heller, G. Abstreiter, K. Brunner, G. Böhm, G. Weimann
Transport in silicon/germanium nanostructures
Applied Surface Science 102, 230-236 (1996)
M. Holzmann, D. Többen, G. Abstreiter
Transport of two-dimensional excitons in magnetic fields
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 3, 2063-2066, Berlin, Germany, July 21-26 (1996)
A. B. Dzyubenko, P. I. Arseyev
Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells
Appl. Phys. Lett. 68 (1996)
T. Fromherz, P. Kruck, M. Helm, G. Bauer, J. Nuetzel, G. Abstreiter
Ultrafast reflectivity changes in photoexcited GaAs Schottky-diodes
Appl. Phys. Lett. 68, 2778-2780 (1996)
W. Fischler, P. Buchberger, R. A. Höpfel, G. Zandler
Wannier-Stark oscillations in Zener tunneling currents
Solid-State Electronics 40, 245 (1996)
H. Nagasawa, K. Murayama, M. Yamaguchi, M. Morifuji, C. Hamaguchi, A. D. Carlo, P. Vogl, G. Böhm, G. Tränkle, G. Weimann
X-ray diffraction study of gallium nitride grown by MOCVD
T. Metzger, H. Angerer, O. Ambacher, M. Stutzmann, E. Born
Yellow luminescence and hydrocarbon contamination in MOVPE-grown GaN
P. DeMierry, O. Ambacher, H. Kratzer, M. Stutzmann

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