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WSI-related Publications for year:
Determination of Existing Stress in Silicon Films on Sapphire Substrate Using Raman Spectroscopy
Solid-State Electronics 23, 31-33 (1980)
T. Englert, G. Abstreiter, J. Pontcharra | Dynamical effects of the interaction between 4f electrons and optical phonons in rare-earth hydroxides, especially in Tb(OH)3 and Nd(OH)3
J. Phys. C: Solid State Phys. 13, 4545-4564 (1980)
K. Ahrens, H. Gerlinger, H. Lichtblau, G. Schaack, G. Abstreiter, S. Mroczkowski | Electronic Properties of the Two-Dimensional System at GaAs/Alx-Ga1-xAs Interfaces
Surface Science 98, 117-125 (1980)
G. Abstreiter | Low-threshold-current injection laser with built-in passive waveguiding
Topical Meeting on Integrated and Guided-Wave Optics, Incline Village, Nevada, USA (1980)
M. C. Amann, B. Stegmueller | Magnetic Bragg Scattering in Antiferromagnets Observed through Raman Scattering from Phonons
J. of Magnetism and Magn. Mat. 15-18, 777-778 (1980)
G. Güntherodt, G. Abstreiter, W. Bauhofer, G. Benedek, E. Anastassakis | New contacting system for low-expense GaAs-AlGaAs light sources
Frequenz 34, 343-346 (1980)
M. C. Amann | On the theory of the superluminescent diode: 1. stationary behaviour
Archiv für Elektronik und Übertragungstechnik, 34 (1980) 465-468 (1980)
J. Boeck, M. C. Amann | On the theory of the superluminescent diode: 2. small signal modulation behaviour
Archiv für Elektronik und Übertragungstechnik, 34 (1980) 514-516 (1980)
J. Boeck, M. C. Amann | Optical memory readout by superluminescent diode with integrated photodetector
Electronics Letters 16, 58-60 (1980)
M. C. Amann, A. Kuschmider, J. Boeck | Raman Scattering in a Magnetic Semiconductor
J. of Magnetism and Magn. Mat. 15-18, 821-822 (1980)
G. Güntherodt, R. Merlin, G. Abstreiter | Raman-, LEED- and Auger Spectroscopy of Clean and Oxidized (110) -GaAs -Surfaces
J. Phys. Soc. Japan 49, A, 1101-1104 (1980)
H. J. Stolz, G. Abstreiter | |
| Surface Band bending on Clean and Oxidized (110) - GaAs Studied by Raman Spectroscopy
Solid State Communications 36, 857-860 (1980)
H. J. Stolz, G. Abstreiter |
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Walter Schottky Institut