Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


WSI-related Publications for year:



A COMPARISON OF HYDROGEN INCORPORATION AND EFFUSION IN DOPED CRYSTALLINE SILICON, GERMANIUM, AND GALLIUM-ARSENIDE
APPLIED PHYSICS A-MATERIALS SCIENCE and PROCESSING 53 1 47-53 (1991)
M. STUTZMANN, J. B. CHEVRIER, C. P. HERRERO, A. BREITSCHWERDT
ACCELERATED METASTABLE DEFECT CREATION IN A-SI-H BY SHORT LIGHT-PULSES
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 231-234 (1991)
M. STUTZMANN, J. NUNNENKAMP, M. S. BRANDT, A. ASANO, M. C. ROSSI
Band structure, quantum confinement, and exchange splitting in Sc1-xErxAs epitaxial layers buried in GaAs
Phys. Rev. B43 (1991)
S. J. Allen, J., F. DeRosa, C. J. Palmstrøm, A. Zrenner
BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON
PHYSICAL REVIEW B 43 2 1555-1575 (1991)
C. P. HERRERO, M. STUTZMANN, A. BREITSCHWERDT
Broadband electronic wavelength tuning by codirectionally coupled twin-guide laser diode
European Conference on Optical Communications (ECOC), Paris, France (1991)
S. Illek, W. Thulke, B. Borchert, M. C. Amann
Codirectionally coupled twin-guide laser diode for broadband electronic wavelength tuning
Electronics Letters 27, 2207-2208 (1991)
S. Illek, W. Thulke, M. C. Amann
Comparison of Growth and Strain Relaxation of Si/Ge Superlattices under Compressive and Tensile Strain Field
Mat. Res. Soc. Symp. Proc. 220, 135-140 (1991)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
COMPOSITIONAL DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA IN HYDROGENATED AMORPHOUS SILICON-SULFUR ALLOYS
JOURNAL OF LUMINESCENCE 48-9 641-644 (1991)
T. MUSCHIK, R. SCHWARZ, M. HAMMAM, S. M. ALALAWI, S. ALDALLAL, S. ALJISHI, M. STUTZMANN, S. JIN
DEPTH PROFILING OF DEFECTS IN A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 623-626 (1991)
A. ASANO, M. STUTZMANN
DEPTH PROFILING OF NONUNIFORM OPTICAL-ABSORPTION IN THIN-FILMS - APPLICATION TO HYDROGENATED AMORPHOUS-SILICON
JOURNAL OF APPLIED PHYSICS 70 9 5025-5034 (1991)
A. ASANO, M. STUTZMANN
ELECTRONIC LEVELS OF PHOSPHORUS DONORS IN A-SI-H
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 379-382 (1991)
J. KOCKA, J. STUCHLIK, M. STUTZMANN, L. CHEN, J. TAUC
Electronic properties of quantum-dot superlattices
Phys. Rev. B43 (1991)
J. A. Brum
ELECTRONIC-PROPERTIES OF A-SI,S-H AND A-SI,SE-H ALLOYS
SOLAR ENERGY MATERIALS 23 2-4 334-339 (1991)
S. ALJISHI, S. ALDALLAL, S. M. ALALAWI, M. HAMMAM, H. S. ALALAWI, M. STUTZMANN, S. JIN, T. MUSCHIK, R. SCHWARZ
EXCITONS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON
APPLIED PHYSICS LETTERS 58 15 1620-1622 (1991)
M. S. BRANDT, M. STUTZMANN
EXPLOSIVE ISOTHERMAL HYDROGEN EXODIFFUSION IN VHF-GD A-SI-H THICK LAYERS
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 53-56 (1991)
E. BUSTARRET, M. BRANDT, M. STUTZMANN, M. FAVRE
FAST METASTABLE-DEFECT CREATION IN AMORPHOUS-SILICON BY FEMTOSECOND LIGHT-PULSES
PHYSICAL REVIEW LETTERS 67 17 2347-2350 (1991)
M. STUTZMANN, J. NUNNENKAMP, M. S. BRANDT, A. ASANO
Generation of LO-phonons in a time-dependent electric field at the surface of III-V materials
phys. stat. sol. (b) 168, 123-38 (1991)
R. Scholz, A. Stahl
Group IV Element (Si, Ge and ?-Sn) Superlattices - Low Temperature MBE
J. of Crystal Growth 111, 882-888 (1991)
K. Eberl, W. Wegscheider, G. Abstreiter
HIGH BAND-GAP HYDROGENATED AMORPHOUS SILICON-SELENIUM ALLOYS
JOURNAL OF APPLIED PHYSICS 70 9 4926-4930 (1991)
S. ALDALLAL, S. ALIISHI, M. HAMMAM, S. M. ALALAWI, M. STUTZMANN, S. JIN, T. MUSCHIK, R. SCHWARZ
High Electron Mobility in Modulation-Doped Si/SiGe Quantum Well Structures
Appl. Phys. Lett. 59 (1991)
G. Schuberth, F. Schäffler, M. Besson, G. Abstreiter, E. Gornik
High Resolution Imaging of Twin Intersections in Si/Ge Superlattices on Ge (001) Substrates
Proc. of the 7th Int. Conf. on Microscopy of Semiconducting Materials, Oxford, March 25-28, 1991. IOP Publishing Ltd, 1991. 21-26. (1991)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
HYDROGEN IN SEMICONDUCTORS - BULK AND SURFACE-PROPERTIES - PROCEEDINGS OF THE 6TH TRIESTE IUPAP-ICTP SEMICONDUCTOR SYMPOSIUM INTERNATIONAL-CENTER-FOR-THEORETICAL-PHYSICS TRIESTE, ITALY, 27-31 AUGUST 1990 - INTRODUCTION
PHYSICA B 170 1-4 R8-R9 (1991)
J. CHEVALLIER, M. STUTZMANN
HYDROGEN PASSIVATION AND REACTIVATION OF SHALLOW ZN ACCEPTORS IN GAAS
APPLIED SURFACE SCIENCE 50 1-4 390-394 (1991)
A. W. R. LEITCH, T. PRESCHA, M. STUTZMANN
HYDROGENATION OF INAS ON GAAS HETEROSTRUCTURES
JOURNAL OF APPLIED PHYSICS 70 3 1461-1466 (1991)
B. THEYS, A. LUSSON, J. CHEVALLIER, C. GRATTEPAIN, S. KALEM, M. STUTZMANN
Inelastic Light Scattering in Semiconductor Quantum Structures
Highlights in Condensed Matter Physics and Future Prospects. Ed.: L. Esaki. Plenum Press, N.Y., 1991. 191-207. (1991)
G. Abstreiter
Infrared Optical Properties and Band Structure of *-Sn/Ge Superlattices on Ge Substrates
Phys. Rev. Lett. 67 (1991)
J. Olajos, P. Vogl, W. Wegscheider, G. Abstreiter
Integrated wavelength-selective GaAs/AlGaAs multi-quantum-well detectors
Semicond. Sci. Technol. 6, C128-129 (1991)
A. Köck, E. Gornik, G. Abstreiter, G. Böhm, M. Walther, G. Weimann
Interband Optical Transitions in Semiconductor Quantum Wires: Selection Rules and Absorption Spectra
Europhysics Lett., 15 (1991)
U. Bockelmann, G. Bastard
Interface Phonons in GaAs/AlAs Superlattices Studied by Micro-Raman Spectroscopy
Superlattices and Microstructures, 9 (1991)
A. Huber, T. Egeler, W. Ettmüller, H. Rothfritz, G. Tränkle, G. Abstreiter
Intersubband Absorption and Real Space Electron Transfer in GaAs Quantum Wells
Resonant Tunneling in Semiconductors: Physics and Applications. Eds.: L.L. Chang, E. E. Mendez and C. Tejedor.Plenum Press, N.Y., 1991. 505-513. (1991)
G. Abstreiter, M. Besson, R. Heinrich, A. Köck, W. Schlapp, G. Weimann, R. Zachai
Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells
Mat. Res. Soc. Symp. Proc. 220, 379-381 (1991)
H. Hertle, G. Schuberth, E. Gornik, G. Abstreiter, F. Schäffler
Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells
Appl. Phys. Lett. 59 (1991)
H. Hertle, G. Schuberth, E. Gornik, G. Abstreiter, F. Schäffler
KINETICS OF LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - THE CONSTANT DEGRADATION METHOD
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 211-214 (1991)
M. S. BRANDT, M. STUTZMANN
Linewidth reduction in wavelength tunable laser diodes by voltage control
Electronics Letters 27, 531-532 (1991)
M. C. Amann, S. Illek, H. Lang
Micro-Raman Spectroscopy for Characterization of Semiconductor Devices
Appl. Surf. Science 50, p. 73-78 (1991)
G. Abstreiter
Micro-Raman spectroscopy for large in-plane wave vector excitations in quantum-well structures
Light scattering in semiconductor structures and superlattices. Eds.: D. J. Lockwood and J. F. Young. Plenum Press, N.Y., 1991. 561-569. (1991)
G. Abstreiter, S. Beeck, T. Egeler, A. Huber
Microscopic symmetry properties of (001) Si/Ge monolayer superlattices
Phys. Rev. B43 (1991)
K. Eberl, W. Wegscheider, R. Schorer, G. Abstreiter
MOLYBDENUM IMPURITY STATES IN AMORPHOUS-SILICON AND RELATED MATERIALS
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 63 1 151-162 (1991)
M. STUTZMANN, J. STUKE
Narrow linewidth tunable-twin-guide lasers with metal-clad ridge-waveguide structure
Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1991)
T. Wolf, M. C. Amann
Narrow-linewidth InGaAsP/InP metal-clad ridge-waveguide distributed feedback lasers
Japanese Journal of Applied Physics 30, L745-L747 (1991)
T. Wolf, B. Borchert, K. Drögemüller, M. C. Amann
Optical Properties of Type I and Type II GaAs/AlGaAs Nanostructures
Physics of Nanostructures, 301-308, Proc. of SUSSP38, St. Andrews, July-August 1991 (1991)
K. Brunner, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Photoreflectance and Resonant Raman Scattering in Short Period Si/Ge Superlattices on Ge (001) and Si (001)
Mat. Res. Soc. Symp. Proc. 220, 361-366 (1991)
U. Menczigar, K. Eberl, G. Abstreiter
Photoreflectance studies of GaAs containing a Si-*-doping layer
J. Appl. Phys. 69 (1991)
W. Zhou, C. H. Perry, L. Ma, K. S. Lee, J. M. Worlock, A. Zrenner, F. Koch, K. Ploog
Polarization-Dependent Optical-Wave Fields in Grating Structures
Europhys-Lett. 16 (1991)
U. Bockelmann
Raman-microanalysis of strain and crystal orientation in laser-crystallized silicon
Fresenius J Anal Chem, 341, 166-170 (1991)
G. Kolb, T. Salbert, G. Abstreiter
Raman-Microprobe Study of Stress and Crystal Orientation in Laser-Crystallized Silicon
J. Appl. Phys. 69 (1991)
G. Kolb, T. Salbert, G. Abstreiter
Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts
Appl. Phys. Lett. 58, 1007-1009 (1991)
F. U. Herrmann, S. Beeck, G. Abstreiter, C. Hanke, C. Hoyler, L. Korte
Resonant Raman Scattering by Quasi 2- and 1-dimensional Electron Systems
Festkörperprobleme (Advances in Solid State Physics) 31, 315-327 (1991)
T. Egeler
Resonant Tunneling of Holes in Si/Si1-xGex Quantum Well Structures
Mat. Res. Soc. Symp. Proc. 220, 409-411 (1991)
G. Schuberth, G. Abstreiter, E. Gornik, F. Schäffler, J. F. Luy
Resonant Tunneling of Holes in Si/SixGe1-x Quantum-Well Structures
Phys. Rev. B43 (1991)
G. Schuberth, G. Abstreiter, E. Gornik, F. Schäffler, J. F. Luy
SPIN-DEPENDENT CONDUCTIVITY IN AMORPHOUS HYDROGENATED SILICON
PHYSICAL REVIEW B 43 6 5184-5187 (1991)
M. S. BRANDT, M. STUTZMANN
Stability and interdiffusion of short-period Si/Ge strained layer superlattices
J. Vac. Sci. Technol. B9 (1991)
E. Friess, R. Schorer, K. Eberl, G. Abstreiter
STATES OF HYDROGEN IN CRYSTALLINE SILICON
PHYSICA B 170 1-4 240-244 (1991)
M. STUTZMANN, W. BEYER, L. TAPFER, C. P. HERRERO
Strained layer heterostructures and superlattices based on group IV elements
Condensed Systems of Low-Dimensionality. Eds. J.L. Beeby, P. K. Bhattacharya, P. Ch. Gravelle, F. Koch and D. J. Lockwood. Plenum Press, N.Y., 1991. 471-480. (1991)
G. Abstreiter, K. Eberl, E. Friess, U. Menczigar, W. Wegscheider
STRUCTURAL AND ELECTRONIC-PROPERTIES OF TERNARY HYDROGENATED AMORPHOUS SILICON-SULFUR-SELENIUM ALLOYS
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 911-914 (1991)
M. HAMMAM, S. M. ALALAWI, B. ALALAWI, S. ALDALLAL, S. ALJISHI, M. STUTZMANN
Structural Stability of Short-Period Si/Ge Superlattices Studied with Raman Spectroscopy
Phys. Rev. B44 (1991)
R. Schorer, E. Friess, K. Eberl, G. Abstreiter
STRUCTURAL-PROPERTIES OF LI-DOPED HYDROGENATED AMORPHOUS-SILICON
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 107-110 (1991)
K. PIERZ, M. STUTZMANN, S. ZOLLNER, W. BEYER, C. BRILLERTY
Symmetry Properties of Short Period (001) Si/Ge Superlattices
Superlattices and Microstructures, 9 (1991)
K. Eberl, W. Wegscheider, G. Abstreiter, H. Cerva, H. Oppolzer
Wavelength tunable single-mode laser diodes
Festkörperprobleme, 31 (1991) 201-218 (1991)
M. C. Amann





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