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WSI-related Publications for year:
0.15 µm double modulation doped InAs-inserted-channel MODFETs: Gate recess for optimum RF performances
Electronics Lett. Vol. 33 (6) 33 (6), 532-533 (1997)
D. Xu, H. Heiß, S. Kraus, M. Sexl, G. Böhm, G. Tränkle, G. Weimann, G. Abstreiter | 2 S/mm Transconductance InAs-Inserted-Channel Modulation Doped Field Effect Transistors with a Very Close Gate-to-Channel Separation of 14.5 nm
Jpn. J. Appl. Phys. 36, (No. 4B), L470-L472 (1997)
D. Xu, H. Heiß, M. Sexl, S. Kraus, G. Böhm, G. Tränkle, G. Weimann, G. Abstreiter | A Monte Carlo transport model based on spherical harmonics expansion of the valence bands
in Simulation of Semiconductor Devices and Processes 6, Vol. 6, Eds.: H. Ryssel and P. Pichler (1997)
H. Kosina, M. Harrer, P. Vogl, S. Selberherr | AlGaN-based Bragg reflectors
MRS Internet J. of Nitride Semicond. Res. 2, 203 (1997)
O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp | AlGaN-based Bragg reflectors
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2 22 art. no.-22 (1997)
O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp, K. Wilmers, W. Richter, M. Stutzmann | Analysis of quantum-transport phenomena in mesoscopic systems: A Monte Carlo approach
Phys. Stat. Solidi (b) 204, 339-342 (1997)
S. Ragazzi, A. Di Carlo, P. Lugli, F. Rossi | Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth
Phys. Rev. Letters 79 (10), 1917-1920 (1997)
W. Wegscheider, G. Schedelbeck, G. Abstreiter, M. Rother, M. Bichler | CBE of 1.55µm (GaIn)(AsP) lasers for monolithic integration
Journal of Crystal Growth 175/176, 1200-1204 (1997)
A. Nutsch, B. Torabi, H. Kratzer, G. Tränkle, G. Weimann | Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy
JOURNAL OF APPLIED PHYSICS 81 1 234-237 (1997)
C. F. O. Graeff, C. E. Nebel, M. Stutzmann, A. Floter, R. Zachai | Classical and quantum magneto-transport of excitons in two-dimensional systems
12th Int. Conf. on The Application of High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany, July 28-Aug.2, 1996.Vol 2, 729-732 (1997)
P. I. Arseyev, A. B. Dzyubenko, G. E. W. Bauer | Coherent THz Plasmons in GaAs: Transition from pure plasmons to coupled plasmon-phonon modes
Phys. Stat. Sol. (b) 204, 64 - 66 (1997)
R. Bratschitsch, W. Fischler, R. A. Höpfel, G. Zandler | |
| Coherent X-ray scattering phenomenon in highly disordered epitaxial AlN films
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 162 2 529-535 (1997)
T. Metzger, R. Hopler, E. Born, S. Christiansen, M. Albrecht, H. P. Strunk, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster, H. Gobel | Comment on 'Resonantly excited photoluminescence spectra of porous silicon' - Reply
PHYSICAL REVIEW B 55 15 10117-10118 (1997)
M. Rosenbauer, M. Stutzmann, S. Finkbeiner, J. Weber, E. Bustarret | Conduction band Mixing in T- and V-shaped quantum wires
Phys. Rev. B 56, 1668 (1997)
S. Pescetelli, A. Di Carlo, P. Lugli | Conduction Band Mixing in T- and V-shaped quantum wires
Phys. Rev. B 56, 1668 (1997)
S. Pescetelli, A. Di Carlo, P. Lugli | Coupled Quantum Dots Fabricated by Cleaved Edge Overgrowth: From Artifical Atoms to Molecules
Science Vol 278, 1792-1795 (1997)
G. Schedelbeck, W. Wegscheider, M. Bichler, G. Abstreiter | Defect-free strain relaxation in locally MBE-grown SiGe-heterostructures
Thin Solid Films 294, 27-32 (1997)
T. Rupp, F. Kaesen, W. Hansch, E. Hammerl, D. J. Gravesteijn, R. Schorer, E. Silveira, G. Abstreiter, I. Eisele | Determination of optical constants for the design of AlGaN-based Bragg reflectors
MRS Internet. J. of Nitride Semicond. Res. 2, 22 (1997)
O. Ambacher, M. Arzberger, D. Brunner, H. Angerer, F. Freudenberg, N. Esser, T. Wethkamp | Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films
APPLIED PHYSICS LETTERS 71 11 1504-1506 (1997)
H. Angerer, D. Brunner, F. Freudenberg, O. Ambacher, M. Stutzmann, R. Hopler, T. Metzger, E. Born, G. Dollinger, A. Bergmaier, S. Karsch, H. J. Korner | Direct and indirect magnetoexcitons in InGaAs/GaAs coupled quantum wells: experiment and theory
12th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany, July 28-Aug.2, 1996. Vol 2, 689-692 (1997)
L. V. Butov, A. B. Dzyubenko, A. L. Yablonskii, A. Zrenner, G. Abstreiter, A. V. Petinova, K. Eberl | Editorial note
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 199 1 3-3 (1997)
M. Stutzmann | Electrically detected magnetic resonance (EDMR) of defects in GaN light emitting diodes
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 159 2 R5-R6 (1997)
M. W. Bayerl, M. S. Brandt, M. Stutzmann | |
| Electrically detected magnetic resonance at different microwave frequencies
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 963-968 (1997)
M. S. Brandt, M. W. Bayerl, N. M. Reinacher, T. Wimbauer, M. Stutzmann | Electrically detected magnetic resonance in undoped polyacetylene and polyaniline
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 162 2 713-721 (1997)
C. F. O. Graeff, M. S. Brandt, R. M. Faria, G. Leising | Electronic and optical properties of magnetoexcitons in quantum-well wires
12th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany 29. July-2. August 1996, Vol 2, 545-548 (1997)
M. Graf, A. B. Dzyubenko | Electronic properties of CVD and synthetic diamond
PHYSICAL REVIEW B 55 15 9786-9791 (1997)
C. E. Nebel, J. Munz, M. Stutzmann, R. Zachai, H. Guttler | Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
Mat. Res. Soc. Symp. Proc. 449, 917-922 (1997)
J. Majewski, M. Städele, P. Vogl | Electronic transport in crystalline siloxene
SOLID STATE COMMUNICATIONS 102 5 365-368 (1997)
M. S. Brandt, T. Puchert, M. Stutzmann | Enhanced Coherent Zener Tunneling in Indirect Gap Semiconductors
Phys. Stat. Sol. (b) 204, 420-423 (1997)
A. Di Carlo, P. Lugli, A. Kavokin, M. Vladimirova, P. Vogl | Enhanced Zener tunneling in Silicon
Solid State Commun. 101, 921 (1997)
A. Di Carlo, P. Lugli, P. Vogl | Erbium-silicon light emitting diodes grown by molecular beam epitaxy: optical properties
Thin Solid Films 294, 220-222 (1997)
J. Stimmer, A. Reittinger, E. Neufeld, G. Abstreiter, H. Holzbrecher, U. Breuer, C. Buchal | Exact Kohn-Sham Exchange Potential in Semiconductors
Phys. Rev. Lett. 79, 2089 (1997)
M. Städele, J. Majewski, P. Vogl | Excitons in T-shaped quantum wires
Phys. Rev. Vol. 56 (7) 56 (7), 4108 – 4114 (1997)
S. Glutsch, F. Bechstedt, W. Wegscheider, G. Schedelbeck | |
| Fabrication of lateral npn- and pnp- structures on Si/SiGe by focused laser beam writing and their application as photodetectors
J. Appl. Phys. 81 (9), 6455-6460 (1997)
C. Engel, P. Baumgartner, M. Holzmann, J. Nuetzel, G. Abstreiter | Franz-Keldysh effect in lateral GaAs/AlGaAs based npn-structures
Appl. Phys. Lett. 70 (21), 2876-2878 (1997)
P. Baumgartner, C. Engel, G. Böhm, G. Abstreiter | Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 1309-1314 (1997)
T. Wimbauer, M. S. Brandt, M. W. Bayerl, M. Stutzmann, D. M. Hofmann, Y. Mochizuki, M. Mizuta | Gamma-X mixing in T- and V-shaped Quantum Wires
Phys. Stat. Sol. (b) 204, 275-278 (1997)
A. Di Carlo, S. Pescetelli, A. Kavokin, M. Vladimirova, P. Lugli | Ge self-diffusion in isotopic (70Ge)n(74Ge)m superlattices: A Raman study
Phys. Rev. B 56 (4), 2062-2069 (1997)
E. Silveira, W. Dondl, G. Abstreiter, E. E. Haller | Growth of GaN/AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium
JOURNAL OF CRYSTAL GROWTH 170 1-4 335-339 (1997)
O. Ambacher, R. Dimitrov, D. Lentz, T. Metzger, W. Rieger, M. Stutzmann | Growth of self-assembled homogeneous SiGe dots on Si(100)
Thin Solid Films 294, 291-295 (1997)
P. Schittenhelm, G. Abstreiter, A. Darhuber, G. Bauer, P. Werner, A. Kosogov | High Performance Double Modulation Doped InAlAs/InGaAs/InAs HFETs
IEEE Electon Device Letters 18 (7), Vol. 18 (1997)
D. Xu, H. Heiß, S. Kraus, M. Sexl, G. Böhm, G. Tränkle, G. Weiman, G. Abstreiter | High resolution x-ray diffraction from multilayered self-assembled Ge-dots
Phys. Rev. B 55 (23), 15652-15663 (1997)
A. A. Darhuber, P. Schittenhelm, V. Holý, J. Stangl, G. Bauer, G. Abstreiter | Influence of germanium content on the photoluminescence of erbium- and oxygen-doped SiGe grown by molecular beam epitaxy
H. Holzbrecher, Phys. Lett 71 (1997)
E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter | Influence of magnesium doping on the structural properties of GaN layers
JOURNAL OF CRYSTAL GROWTH 181 3 197-203 (1997)
A. Cros, R. Dimitrov, H. Angerer, O. Ambacher, M. Stutzmann, S. Christiansen, M. Albrecht, H. P. Strunk | |
| Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes
Appl. Phys. Lett. 70 (18), 2431-2433 (1997)
A. Reittinger, J. Stimmer, G. Abstreiter | Infrared studies of p-type Si/SiGe quantum wells: intersubband absorption, infrared detectors, and second harmonic generation
Thin Solid Films (EMRS) 294, 330-335 (1997)
M. Helm, P. Kruck, T. Fromherz, A. Weichselbaum, M. Seto, G. Bauer, Z. Moussa, P. Boucaud, F. H. Julien, J. M. Lourtioz, J. Nuetzel, G. Abstreiter | Intersubband transitions, infrared detectors, and optical nonlinearities in SiGe multiquantum wells
Mat. Res. Soc. Symp. Proc., 450, 201-211 (1997)
M. Helm, P. Kruck, T. Fromherz, M. Seto, G. Bauer, J. Nuetzel, G. Abstreiter | Ion-ion interactions in mixed-valency diluted magnetic semiconductors
in 12th Int.Conf.High. Magnetic Fields in the Physics of Semiconductors (1997)
J. Blinowski, P. Kacman, J. Majewski | Lateral photodetector devices on Si/SiGe heterostructures
Thin Solid Films 294, 347-350 (1997)
C. Engel, P. Baumgartner, M. Holzmann, J. Nuetzel, G. Abstreiter | Local spectroscopy of magnetoexcitons in different types of single quantum dots
12th Int. Conf. on The Application of High Magnetic Fields in Semiconductor Physics, Würzburg, Germany, July 28-Aug.2, 1996.Vol 2, 655-658 (1997)
W. Heller, U. Bockelmann, G. Abstreiter | Magnetooptical studies of a single quantum dot: Excited states and spin flip of excitons
Phys. Rev. B 55 (8), R4871-R4874 (1997)
W. Heller, U. Bockelmann | Micro-photoluminescence studies of single quantum dots. I. Time-resolved experiments
Phys. Rev. B 55 (7), 4456-4468 (1997)
U. Bockelmann, W. Heller, A. Filoramo, P. Roussignol | Micro-photoluminescence studies of single quantum dots. II. Magnetic-field experiments
Phys. Rev. B 55 (7), 4469-4472 (1997)
U. Bockelmann, W. Heller, G. Abstreiter | Optical constants of epitaxial AlGaN films and their temperature dependence
JOURNAL OF APPLIED PHYSICS 82 10 5090-5096 (1997)
D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Hopler, R. Dimitrov, O. Ambacher, M. Stutzmann | P. Werner, N.A. Bert, G.G. Konnikov, A.A. Suvorova, V.M. Ustinov, N.N. Ledentsov, D. Bimberg, P. Schittenhelm
Inst. of Physics Conf. Series 155, 851-854 (1997)
A. O. Kosoyov, G. Abstreiter | |
| Phonon-assisted exciton formation and relaxation in GaAs/AlGaAs Quantum Wells
Phys. Rev. B 55, 16049 (1997)
M. Gulia, F. Rossi, E. Molinari, P. E. Selbmann, P. Lugli | Phonon-Assisted Exciton Formation and Relaxation: Bulk and Two-Dimensional Systems
Phys. Stat. Sol. (b) 204, 223-226 (1997)
P. Lugli, F. Rossi, M. Gulia, E. Molinari, P. E. Selbmann, F. Compagnone | Physik und Technologie von Quantendrähten
In „Niederdim. Quantenstr. u. Materialien f. blaue Lichtquellen“. Eds.: A.Schlachetzki, H. Bachmair. PTB Bericht E 53. Wirtschaftsverlag NW, Bremerhaven, 96.184 (1997)
W. Wegscheider | Properties and applications of MBE grown AlGaN
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 50 1-3 212-218 (1997)
M. Stutzmann, O. Ambacher, A. Cros, M. S. Brandt, H. Angerer, R. Dimitrov, N. Reinacher, T. Metzger, R. Hopler, D. Brunner, F. Freudenberg, R. Handschuh, C. Deger | Prospects of Ga/In/Al-N nanometer devices: Electronic structure, scattering rates, and high field transport
Phys. Stat. Sol. (b) 204, 133 - 135 (1997)
G. Zandler, J. Majewski, M. Städele, P. Vogl, F. Compagnone | Quantum Wires and Dots Fabricatet by Cleaved Edge Overgrowth
Phys. Stat. Sol. (a) 164, 601-606 (1997)
W. Wegscheider, G. Schedelbeck, M. Bichler, G. Abstreiter | Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2 42-45 art. no.-43 (1997)
A. Cros, H. Angerer, R. Handschuh, O. Ambacher, M. Stutzmann | Raman spectra of isotopic GaN
PHYSICAL REVIEW B 56 22 14399-14406 (1997)
J. M. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J. M. Wagner, F. Bechstedt | Raman study of the optical phonons in AlxGa1-xN alloys
SOLID STATE COMMUNICATIONS 104 1 35-39 (1997)
A. Cros, H. Angerer, O. Ambacher, M. Stutzmann, R. Hopler, T. Metzger | Realization of AlGaAs antidot arrays by pulsed laser interference gratings
J. Appl. Phys. 82, 1497 (1997)
C. E. Nebel, J. Rogg, M. K. Kelly, B. Dahlheimer, M. Rother, M. Bichler, W. Wegscheider | Realization of AlGaAs antidot arrays by pulsed laser interference gratings
JOURNAL OF APPLIED PHYSICS 82 3 1497-1499 (1997)
C. E. Nebel, J. Rogg, M. K. Kelly, B. Dahlheimer, M. Rother, M. Bichler, W. Wegscheider, M. Stutzmann | |
| Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin-film transistors
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 36 1A 121-125 (1997)
G. Kawachi, C. F. O. Graeff, M. S. Brandt, M. Stutzmann | Self-assembled growth of Sn on Ge (001)
Thin Solid Films 294, 308-310 (1997)
W. Dondl, P. Schittenhelm, G. Abstreiter | Si-29 nuclear magnetic resonance of luminescent silicon
APPLIED PHYSICS LETTERS 70 2 188-190 (1997)
M. S. Brandt, S. E. Ready, J. B. Boyce | Single electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure
Appl. Phys. Lett. 70 (16), 2135-2137 (1997)
P. Baumgartner, W. Wegscheider, M. Bichler, G. Schedelbeck, R. Neumann, G. Abstreiter | Stability and band offsets of polar GaN/SiC(001) and AlN/SiC (001) interfaces
Phys. Rev. B 56, 6911-6920 (1997)
M. Städele, J. Majewski, P. Vogl | Stability and Band Offsets of SiC/GaN, SiC/AlN, and AlN/GaN heterostructures
Mat. Res. Soc. Symp. Proc. 449, 887-892 (1997)
J. Majewski, M. Städele, P. Vogl | STM-Cathodoluminescence of Self-Assembled InGaAs Quantum Dots
Phys. Stat. Sol. (a) 164, 301-305 (1997)
M. Markmann, A. Zrenner, G. Böhm, G. Abstreiter | Structural characterization of self-organized semiconductor dots by X-ray methods
Phantoms Newsletters 13, 5-Jan (1997)
A. A. Darhuber, V. Holy, G. Bauer, P. Schittenhelm, G. Abstreiter | Sub-bandgap spectroscopy of chemical vapor deposition diamond
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 46 1-3 115-118 (1997)
E. Rohrer, C. F. O. Graeff, C. E. Nebel, M. Stutzmann, H. Guttler, R. Zachai | Submilliampere vertical-cavity surface-emitting lasers with intracavity contacts and buried lateral current confinement
Inst. Phys. Conf. Ser. 155 (4), 381-385 (1997)
M. Hauser, H. Kratzer, G. Böhm, G. Tränkle, G. Weimann | Subpicosecond vibronic dynamics in KBr F-centers
Phys. Rev. B 56, 1179-95 (1997)
R. Scholz, M. Schreiber, F. Bassani, M. Nisoli, S. D. Silvestri, O. Svelto | |
| Temperature and Power Dependence of Exciton Spectra in Quantum Dots
Phys. Stat. Sol. (a) 164, 281-286 (1997)
U. Bockelmann, W. Heller, A. Filoramo, P. Roussignol, G. Abstreiter | Theoretical investigation of subpicosecond vibronic dynamics in alkali halides
J. Lumin. 72-74, 838-9 (1997)
R. Scholz, F. Bassani, M. Schreiber | Theory of intraband magneto-optics of excitons in coupled double quantum wells
12th Int. Conf., High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany, July 28-Aug.2, 1996. Vol 2, 693-696 (1997)
A. B. Dzyubenko, A. L. Yablonskii | Transport properties and electroluminescence of siloxene
JOURNAL OF APPLIED PHYSICS 82 9 4520-4524 (1997)
M. Rosenbauer, M. Stutzmann | Ultrafast Rabi oscillations of free-carrier transitions in InP
Phys. Stat. Sol. (b) 204, 20 (1997)
C. Fürst, A. Leitensdorfer, A. Nutsch, G. Tränkle, A. Zrenner |
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Walter Schottky Institut