Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


WSI-related Publications for year:



Anisotropic Plasmon Dispersion in a Lateral Quantum-Wire Superlattice
Phys. Rev. Lett. 65 (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, P. Grambow
Band Offset in Elastically Strained InGaAs/GaAs Multiple Quantum Wells determined by Optical Absorption and Electronic Raman Scattering
Appl. Phys. Lett. 56 (1990)
J. P. Reithmaier, R. Höger, H. Riechert, A. Heberle, G. Abstreiter, G. Weimann
Comparison of alumina and silica based spin-on diffusion sources
Japanese Journal of Applied Physics 29, L712-715 (1990)
G. Franz, M. C. Amann, W. Thulke, R. Weber, R. Kaumanns
Confinement of Light Hole Valence-Band States in Pseudomorphic InGaAs/Ga(Al)As Quantum Wells
Appl. Phys. Lett. 57 (1990)
J. P. Reithmaier, R. Höger, H. Riechert, P. Hiergeist, G. Abstreiter
Continuously tunable laser diodes: Longitudinal versus transverse tuning scheme
IEEE J. on Selected Areas in Communications 8, 1169-1177 (invited) (1990)
M. C. Amann, W. Thulke
Continuously tunable metal-clad ridge-waveguide distributed feedback laser diode
Electronics Letters 26, 1845-1846 (1990)
T. Wolf, H. Westermeier, M. C. Amann
Continuous-tuning ranges of 3-section DBR lasers and TTG-DFB lasers
Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1990)
W. Thulke, M. C. Amann
DEUTERIUM EFFUSION MEASUREMENTS IN DOPED CRYSTALLINE SILICON
JOURNAL OF APPLIED PHYSICS 68 3 1406-1409 (1990)
M. STUTZMANN, M. S. BRANDT
Electronic and structural characterization of the near surface layer and the bulk in
Mat. Res. Soc. Conf. Proc. Vol. 164 (1990)
M. Stutzmann
ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS
JOURNAL OF APPLIED PHYSICS 68 4 1726-1734 (1990)
C. A. DIMITRIADIS, J. H. WERNER, S. LOGOTHETIDIS, M. STUTZMANN, J. WEBER, R. NESPER
Excess linewidth broadening in wavelength-tunable laser diodes
Electronics Letters 26, 279-280 (1990)
M. C. Amann, R. Schimpe
Exciton tunneling in asymmetric coupled quantumwells with spatially separated electron and hole injection
Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990. Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1493-1496. (1990)
A. Zrenner, J. M. Worlock, L. T. Florez, J. P. Harbison
Fabrication and lasing characteristics of L=1.56 µm tunable twin-guide (TTG) DFB lasers
IEE Proceedings Part J 137, 69-73 (1990)
C. Schanen, S. Illek, H. Lang, W. Thulke, M. C. Amann
Grating Coupler Effects on Inelastic Light Scattering by Plasmons in Micro Structured GaAs MQW Systems
Surface Science 229, 391-393 (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp
Growth and Characterization of Ultrathin SimGen Strained Layer Superlattices
Proc. of Esprit Conference, Brussels (1990)
H. Presting, H. Kibbel, E. Kasper, M. Jaros, G. Abstreiter
High Resolution Micro Raman Spectroscopy of GaAs/AlGaAs Quantum Well Lasers in the Low Power Range
Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, September 24-27, 1990. IOP Publishing Ltd., 1990. 561-566. (1990)
S. Beeck, F. U. Herrmann, G. Abstreiter, C. Hanke, L. Korte
Highly Strained ?-Sn/Ge Superlattices - New Man-made Semiconductors
Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990. Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1685-1688 (1990)
W. Wegscheider, K. Eberl, U. Menczigar, J. Olajos, G. Abstreiter, P. Vogl
Inelastic Light Scattering by Electrons in Microstructured Quantum Wells
Solid State Sciences 97: Localization and Confinement of Electrons in Semiconductors, Springer-Verlag, Berlin 1990 (1990)
G. Abstreiter, T. Egeler
Intrinsic bistability in an optically pumped asymmetric quantum well structure
Superlattices and Microstructures 7 (1990)
A. Zrenner, J. M. Worlock, L. T. Florez, J. P. Harbison
LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - SINGLE CARRIER VERSUS EXCITONIC MECHANISMS
APPLIED PHYSICS LETTERS 56 23 2313-2315 (1990)
M. STUTZMANN
Linewidth enhancement by shot noise In DFB lasers
13th European Workshop on Injection Lasers, Gent, Belgium (1990)
M. C. Amann
Linewidth enhancement in distributed-feedback semiconductor lasers
Electronics Letters 26, 569-571 (1990)
M. C. Amann
Local Temperature Distribution in Si-MOSFET`s Studied by Micro-Raman Spectroscopy
Proc. of the 20th ESSDERC, Nottingham, 1990, Bristol: Hilger, 591-594 (1990)
R. Ostermeir, K. Brunner, G. Abstreiter, W. Weber
Negative Infrared Photoconductivity in Narrow GaAs/AlGaAs Multiple Quantum Well Strucutres
Surface Science 228, 465-467 (1990)
R. Heinrich, R. Zachai, M. Besson, T. Egeler, G. Abstreiter, W. Schlapp, G. Weimann
New Relaxation Mechanism in Short Period Si/Ge Strained-Layer Superlattices
Mat. Res. Soc. Symp. Proc. Vol. 183 183, 155-160 (1990)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
Novel Relaxation Process in Strained Si/Ge Superlattices Grown on Ge (001)
Appl. Phys. Lett. 57 (1990)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
Novel transverse twin guide tunable semiconductor laser
European Conference on Optical Communications (ECOC), Amsterdam, The Netherlands (1990)
M. C. Amann
Optical Properties of Short Period Si/Ge Superlattices Grown on (001) Ge Studied with Photoreflectance
in 'Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization', ed. M. Razeghi Proc. of the SPIE `90, Vol. 1361, 282, Aachen (1990)
U. Menczigar, M. Dahmen, R. Zachai, K. Eberl, G. Abstreiter
Over 7 nm (875 GHz) continuous wavelength tuning by tunable twin-guide (TTG) laser diode
Electronics Letters 26, 46-47 (1990)
S. Illek, W. Thulke, C. Schanen, H. Lang, M. C. Amann
Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases
Phys. Rev. B42 (1990)
U. Bockelmann, G. Bastard
Photoluminescence in Short Period Si/Ge Strained Layer Superlattices Grown on Si and Ge Substrates
Surface Science 228, 267-269 (1990)
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel
Photoluminescence in Short-Period Si/Ge Strained-Layer Superlattices
Phys. Rev. Lett. 64 (1990)
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel
Plasmon Excitations in lateral GaAs/(AlGa)As Quantum Wire Superlattices
Proc. of the 20th Int.Conf. on the Physics of Semiconductors (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp
Recent progress in narrow-linewidth InGaAsP laser diodes and diode laser amplifiers
IEEE International Semiconductor Laser Conference (ISLC), Davos, Switzerland (1990)
M. C. Amann
Relevant Scattering Processes, Band Gap Renormalization and Moss-Burstein shift in Modulation Doped Narrow GaAs/AlGaAs Multiple Quantum Wells
Surface Science 229, 398-401 (1990)
U. Bockelmann, P. Hiergeist, G. Abstreiter, G. Weimann, W. Schlapp
Segregation of Zinc in InGaAs/InP heterostructures during diffusion: Experiment and numerical modelling
Japanese Journal of Applied Physics 29, 810-812 (1990)
F. Dildey, M. C. Amann, R. Treichler
Single-crystal Sn/Ge Superlattices on Ge Substrates: Growth and Structural Properties
Appl. Phys. Lett. 57 (1990)
W. Wegscheider, K. Eberl, U. Menczigar, G. Abstreiter
Single-Particle and Transport Scattering Times in Narrow GaAs/AlxGa1-xAs Quantum Wells
Phys. Rev. B41 (1990)
U. Bockelmann, G. Abstreiter, G. Weimann, W. Schlapp
Strain and Confinement Effects on Optical Phonons in Short Period (100) Si/Ge Superlattices
Solid State Communications 73 (1990)
E. Friess, K. Eberl, U. Menczigar, G. Abstreiter
Strain Effects on Valence Band States of Pseudomorphic InGaAs/Ga(Al)As Multiple Quantum Wells
Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, 1990. IOP Publishing Ltd., 1990. 197-200. (1990)
J. P. Reithmaier, H. Riechert, O. Heinrich, P. Hiergeist, G. Abstreiter
Supergitter und Heterostrukturen - Chancen für neue Bauelemente
Siemens Zeitschrift, Spezial (1990)
G. Abstreiter
Superlattices effects in quantum dots
Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990. Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 2363-2370 (1990)
J. A. Brum
Transport properties of InxGa1-xAs/GaAs strained quantum well delta-doped heterostructures grown by molecular beam epitaxy
Appl. Phys. Lett. 57 (1990)
W. P. Hong, A. Zrenner, O. H. Kim, F. DeRosa, J. P. Harbison, L. T. Florez
Tunable twin-guide laser diode with 7 nm continuous tuning range
Conference on Lasers and Electro-Optics (CLEO), Anaheim, USA (1990)
C. Schanen, S. Illek, H. Lang, W. Thulke, M. C. Amann
Wavelength tuning efficiency and spectral linewidth broadening in tunable twin-guide DFB laser diodes
IEEE International Semiconductor Laser Conference (ISLC), Davos, Switzerland (1990)
S. Illek, W. Thulke, C. Schanen, K. Drögemüller, M. C. Amann
Wavelength-tunable DFB laser diodes
IEEE / LEOS annual meeting, Boston, USA (1990)
M. C. Amann





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