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WSI-related Publications for year:
Anisotropic Plasmon Dispersion in a Lateral Quantum-Wire Superlattice Phys. Rev. Lett. 65 (1990) T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, P. Grambow | Band Offset in Elastically Strained InGaAs/GaAs Multiple Quantum Wells determined by Optical Absorption and Electronic Raman Scattering Appl. Phys. Lett. 56 (1990) J. P. Reithmaier, R. Höger, H. Riechert, A. Heberle, G. Abstreiter, G. Weimann | Comparison of alumina and silica based spin-on diffusion sources Japanese Journal of Applied Physics 29, L712-715 (1990) G. Franz, M. C. Amann, W. Thulke, R. Weber, R. Kaumanns | Confinement of Light Hole Valence-Band States in Pseudomorphic InGaAs/Ga(Al)As Quantum Wells Appl. Phys. Lett. 57 (1990) J. P. Reithmaier, R. Höger, H. Riechert, P. Hiergeist, G. Abstreiter | Continuously tunable laser diodes: Longitudinal versus transverse tuning scheme IEEE J. on Selected Areas in Communications 8, 1169-1177 (invited) (1990) M. C. Amann, W. Thulke | Continuously tunable metal-clad ridge-waveguide distributed feedback laser diode Electronics Letters 26, 1845-1846 (1990) T. Wolf, H. Westermeier, M. C. Amann | Continuous-tuning ranges of 3-section DBR lasers and TTG-DFB lasers Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1990) W. Thulke, M. C. Amann | DEUTERIUM EFFUSION MEASUREMENTS IN DOPED CRYSTALLINE SILICON JOURNAL OF APPLIED PHYSICS 68 3 1406-1409 (1990) M. STUTZMANN, M. S. BRANDT | Electronic and structural characterization of the near surface layer and the bulk in Mat. Res. Soc. Conf. Proc. Vol. 164 (1990) M. Stutzmann | ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS JOURNAL OF APPLIED PHYSICS 68 4 1726-1734 (1990) C. A. DIMITRIADIS, J. H. WERNER, S. LOGOTHETIDIS, M. STUTZMANN, J. WEBER, R. NESPER | Excess linewidth broadening in wavelength-tunable laser diodes Electronics Letters 26, 279-280 (1990) M. C. Amann, R. Schimpe |
| Exciton tunneling in asymmetric coupled quantumwells with spatially separated electron and hole injection Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990. Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1493-1496. (1990) A. Zrenner, J. M. Worlock, L. T. Florez, J. P. Harbison | Fabrication and lasing characteristics of L=1.56 µm tunable twin-guide (TTG) DFB lasers IEE Proceedings Part J 137, 69-73 (1990) C. Schanen, S. Illek, H. Lang, W. Thulke, M. C. Amann | Grating Coupler Effects on Inelastic Light Scattering by Plasmons in Micro Structured GaAs MQW Systems Surface Science 229, 391-393 (1990) T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp | Growth and Characterization of Ultrathin SimGen Strained Layer Superlattices Proc. of Esprit Conference, Brussels (1990) H. Presting, H. Kibbel, E. Kasper, M. Jaros, G. Abstreiter | High Resolution Micro Raman Spectroscopy of GaAs/AlGaAs Quantum Well Lasers in the Low Power Range Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, September 24-27, 1990. IOP Publishing Ltd., 1990. 561-566. (1990) S. Beeck, F. U. Herrmann, G. Abstreiter, C. Hanke, L. Korte | Highly Strained ?-Sn/Ge Superlattices - New Man-made Semiconductors Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990. Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1685-1688 (1990) W. Wegscheider, K. Eberl, U. Menczigar, J. Olajos, G. Abstreiter, P. Vogl | Inelastic Light Scattering by Electrons in Microstructured Quantum Wells Solid State Sciences 97: Localization and Confinement of Electrons in Semiconductors, Springer-Verlag, Berlin 1990 (1990) G. Abstreiter, T. Egeler | Intrinsic bistability in an optically pumped asymmetric quantum well structure Superlattices and Microstructures 7 (1990) A. Zrenner, J. M. Worlock, L. T. Florez, J. P. Harbison | LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - SINGLE CARRIER VERSUS EXCITONIC MECHANISMS APPLIED PHYSICS LETTERS 56 23 2313-2315 (1990) M. STUTZMANN | Linewidth enhancement by shot noise In DFB lasers 13th European Workshop on Injection Lasers, Gent, Belgium (1990) M. C. Amann | Linewidth enhancement in distributed-feedback semiconductor lasers Electronics Letters 26, 569-571 (1990) M. C. Amann |
| Local Temperature Distribution in Si-MOSFET`s Studied by Micro-Raman Spectroscopy Proc. of the 20th ESSDERC, Nottingham, 1990, Bristol: Hilger, 591-594 (1990) R. Ostermeir, K. Brunner, G. Abstreiter, W. Weber | Negative Infrared Photoconductivity in Narrow GaAs/AlGaAs Multiple Quantum Well Strucutres Surface Science 228, 465-467 (1990) R. Heinrich, R. Zachai, M. Besson, T. Egeler, G. Abstreiter, W. Schlapp, G. Weimann | New Relaxation Mechanism in Short Period Si/Ge Strained-Layer Superlattices Mat. Res. Soc. Symp. Proc. Vol. 183 183, 155-160 (1990) W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer | Novel Relaxation Process in Strained Si/Ge Superlattices Grown on Ge (001) Appl. Phys. Lett. 57 (1990) W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer | Novel transverse twin guide tunable semiconductor laser European Conference on Optical Communications (ECOC), Amsterdam, The Netherlands (1990) M. C. Amann | Optical Properties of Short Period Si/Ge Superlattices Grown on (001) Ge Studied with Photoreflectance in 'Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization', ed. M. Razeghi Proc. of the SPIE `90, Vol. 1361, 282, Aachen (1990) U. Menczigar, M. Dahmen, R. Zachai, K. Eberl, G. Abstreiter | Over 7 nm (875 GHz) continuous wavelength tuning by tunable twin-guide (TTG) laser diode Electronics Letters 26, 46-47 (1990) S. Illek, W. Thulke, C. Schanen, H. Lang, M. C. Amann | Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases Phys. Rev. B42 (1990) U. Bockelmann, G. Bastard | Photoluminescence in Short Period Si/Ge Strained Layer Superlattices Grown on Si and Ge Substrates Surface Science 228, 267-269 (1990) R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel | Photoluminescence in Short-Period Si/Ge Strained-Layer Superlattices Phys. Rev. Lett. 64 (1990) R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel | Plasmon Excitations in lateral GaAs/(AlGa)As Quantum Wire Superlattices Proc. of the 20th Int.Conf. on the Physics of Semiconductors (1990) T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp |
| Recent progress in narrow-linewidth InGaAsP laser diodes and diode laser amplifiers IEEE International Semiconductor Laser Conference (ISLC), Davos, Switzerland (1990) M. C. Amann | Relevant Scattering Processes, Band Gap Renormalization and Moss-Burstein shift in Modulation Doped Narrow GaAs/AlGaAs Multiple Quantum Wells Surface Science 229, 398-401 (1990) U. Bockelmann, P. Hiergeist, G. Abstreiter, G. Weimann, W. Schlapp | Segregation of Zinc in InGaAs/InP heterostructures during diffusion: Experiment and numerical modelling Japanese Journal of Applied Physics 29, 810-812 (1990) F. Dildey, M. C. Amann, R. Treichler | Single-crystal Sn/Ge Superlattices on Ge Substrates: Growth and Structural Properties Appl. Phys. Lett. 57 (1990) W. Wegscheider, K. Eberl, U. Menczigar, G. Abstreiter | Single-Particle and Transport Scattering Times in Narrow GaAs/AlxGa1-xAs Quantum Wells Phys. Rev. B41 (1990) U. Bockelmann, G. Abstreiter, G. Weimann, W. Schlapp | Strain and Confinement Effects on Optical Phonons in Short Period (100) Si/Ge Superlattices Solid State Communications 73 (1990) E. Friess, K. Eberl, U. Menczigar, G. Abstreiter | Strain Effects on Valence Band States of Pseudomorphic InGaAs/Ga(Al)As Multiple Quantum Wells Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, 1990. IOP Publishing Ltd., 1990. 197-200. (1990) J. P. Reithmaier, H. Riechert, O. Heinrich, P. Hiergeist, G. Abstreiter | Supergitter und Heterostrukturen - Chancen für neue Bauelemente Siemens Zeitschrift, Spezial (1990) G. Abstreiter | Superlattices effects in quantum dots Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990. Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 2363-2370 (1990) J. A. Brum | Transport properties of InxGa1-xAs/GaAs strained quantum well delta-doped heterostructures grown by molecular beam epitaxy Appl. Phys. Lett. 57 (1990) W. P. Hong, A. Zrenner, O. H. Kim, F. DeRosa, J. P. Harbison, L. T. Florez | Tunable twin-guide laser diode with 7 nm continuous tuning range Conference on Lasers and Electro-Optics (CLEO), Anaheim, USA (1990) C. Schanen, S. Illek, H. Lang, W. Thulke, M. C. Amann |
| Wavelength tuning efficiency and spectral linewidth broadening in tunable twin-guide DFB laser diodes IEEE International Semiconductor Laser Conference (ISLC), Davos, Switzerland (1990) S. Illek, W. Thulke, C. Schanen, K. Drögemüller, M. C. Amann | Wavelength-tunable DFB laser diodes IEEE / LEOS annual meeting, Boston, USA (1990) M. C. Amann |
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