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WSI-related Publications for year:
(110) oriented quantum wells and modulation-doped heterostructures for cleaved edge overgrowth
Physica E 2, 131-136 (1998)
W. Wegscheider, G. Schedelbeck, R. Neumann, M. Bichler | A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs
Semicond. Science Technol. 13, 858 - 863 (1998)
A. D. Carlo, P. Lugli, C. Canali, R. Malik, M. Manfredi, A. Neviani, E. Zanoni, G. Zandler | Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 37 3A 745-752 (1998)
O. Ambacher, D. Brunner, R. Dimitrov, M. Stutzmann, A. Sohmer, F. Scholz | Accurate band gaps with density functional theory
Bull. Am. Phys. Soc. 43, 169 (1998)
J. A. Majewski | Amorphous silicon suboxide light-emitting diodes
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 1151-1155 (1998)
R. Janssen, U. Karrer, D. Dimova-Malinovska, M. Stutzmann | Analysis of composition fluctuations on an atomic scale in Al0.25Ga0.75N by high-resolution transmission electron microscopy
APPLIED PHYSICS LETTERS 73 7 930-932 (1998)
B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzmann | a-SiOx : H thin film light emitting devices for Si-based optoelectronics
JOURNAL OF LUMINESCENCE 80 1-4 405-409 (1998)
M. C. Rossi, S. Salvatori, F. Scrimizzi, F. Galluzzi, R. Janssen, M. Stutzmann | Atomically precise quantum dots fabricated by twofold cleaved edge overgrowth: From artifical atoms to molecules
Physica E 3 103-111 (1998)
W. Wegscheider, G. Schedelbeck, M. Bichler, G. Abstreiter | Band gaps and light emission in Si/Ge atomic layer structures
to be publ. in Semiconductors and Semimetals, Vol 49, Light emission in Silicon. Ed.: D. J. Lockwood, Academic Press 37-71 (1998)
G. Abstreiter | Calculation of Landau levels in semiconductor quantum dots in a high magnetic field and at a high optical excitation
Phys. Rev. B 58, 6744 (1998)
S. Nomura, L. Samuelson, C. Pryor, M. E. pistol, M. Stopa, K. Uchida, N. Miura, T. Sugano, Y. Aoyagi | Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 168 2 R7-R8 (1998)
R. Dimitrov, L. Wittmer, H. P. Felsl, A. Mitchell, O. Ambacher, M. Stutzmann | |
| Carrier trapping and release in CVD-diamond rims
DIAMOND AND RELATED MATERIALS 7 2-5 556-559 (1998)
C. E. Nebel, M. Stutzmann, F. Lacher, P. Koidl, R. Zachai | Cellular automata studies of vertical silicon devices
VLSI DESIGN 8 (1-4), 111 - 115 (1998)
M. Saraniti, G. Zandler, G. Formicone, S. Goodnick | Cellular automaton study of time-dynamics of avalanche breakdown in IMPATT diodes
VLSI DESIGN 8 (1-4), 93 - 98 (1998)
G. Zandler, R. Oberhuber, D. Liebig, P. Vogl, M. Saraniti, P. Lugli | Characterization of laser patterned a-Si : H thin films by combined AFM local current measurements
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 170 1 R1-R2 (1998)
B. Rezek, J. Stuchlik, A. Fejfar, J. Kocka, C. E. Nebel, M. Stutzmann | Chemical beam epitaxy of integrated 1.55 µm lasers on exact and misoriented (1 0 0)-InP substrates
Journal of Crystal Growth 188, 275-280 (1998)
A. Nutsch, N. Döhr, H. Kratzer, R. Lukas, B. Torabi, G. Tränkle, G. Abstreiter, G. Weimann | Coherent THz-plasmons in AlGaAs/GaAs heterostructures
Technical Digest. 7 (IEEE Cat. No.98CH36236), International Quantum Electronics Conference, Conference Edition, 1998 Technical Digest Series, Vol.7 (1998)
W. Fischler, R. Bratschitsch, R. A. Höpfel, G. Zandler, K. Unterrainer | Composite fermions in magnetic focusing and commensurability experiments
Physica B 249-251, 15-22 (1998)
J. H. Smet, D. Weiss, K. V. Klitzing, R. Fleischmann, R. Ketzmerick, T. Geisel, W. Wegscheider, P. T. Coleridge, Z. W. Wasilewski, G. Weimann | Conductive microcrystalline-Si films produced by laser processing
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 916-920 (1998)
B. Dahlheimer, U. Karrer, C. E. Nebel, M. Stutzmann | dc Transport of Composite Fermions in Weak Periodic Potentials
Phys. Rev. Lett. 80 (20), 4538-4541 (1998)
J. H. Smet, K. V. Klitzing, D. Weiss, W. Wegscheider | Deep level transient spectroscopy of synthetic type IIb diamond
JOURNAL OF APPLIED PHYSICS 84 11 6105-6108 (1998)
R. Zeisel, C. E. Nebel, M. Stutzmann | Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS 77 4 1013-1025 (1998)
T. Metzger, R. Hopler, E. Born, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster, H. Gobel, S. Christiansen, M. Albrecht, H. P. Strunk | |
| Design and Fabrication of Double Modulation Doped InAlAs/InGaAs/InAs Heterojunction FET’s for High Speed and Millimeter-wave Applications
IEEE Electron Devices 45 (1), Vol. 45 (1998)
D. Xu, H. Heiß, S. Kraus, M. Sexl, G. Böhm, G. Tränkle, G. Abstreiter | Dichtefunktionaltheorie mit exaktem Austausch: Ergebnisse fuer Halbleitern
Verhandl. DPG(VI) 33, 762 (1998)
M. Staedele, M. Moukara, A. Goerling, P. Vogl | Die Entdeckung des fraktionalen Quanten-Hall-Effekts
Physikalische Blätter 54, 1098-1102 (1998)
G. Abstreiter | Direct patterning of single electron tunneling transistors by high resolution electron beam lithogaphy on highly doped molecular beam epitaxy grown silicon films
J. Vac. Sci. Technol. B 16 (1998)
T. Koester, F. Goldschmidtboeing, B. Hadam, J. Stein, S. Altmeyer, B. Spangenberg, H. Kurz | Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping
Physica E 2, 441-448 (1998)
P. Baumgartner, W. Wegscheider, G. Groos, G. Abstreiter | Effects of a lateral electric field on excitons in a single quantum dot
Physica E 2, 623-626 (1998)
W. Heller, U. Bockelmann, G. Abstreiter | Effects of substrate orientation on the valence band splittings and valence band offsets in GaN and AlN films
Mat.Res.Soc.Symp.Proc. Vol. 482 482, 917 (1998)
J. A. Majewski, M. Staedele | Electrical and structural properties of AlGaN: a comparison with CVD diamond
DIAMOND AND RELATED MATERIALS 7 2-5 123-128 (1998)
M. Stutzmann, O. Ambacher, H. Angerer, C. E. Nebel, E. Rohrer | Electrical Detection of Optically-Induced Charge Storage in Self-Assembled InAs Quantum Dots
Appl. Phys. Lett. 73, 2618-2620 (1998)
J. J. Finley, M. Skalitz, M. Arzberger, A. Zrenner, G. Böhm, G. Abstreiter | Electrically detected magnetic resonance of a-Si : H at low magnetic fields: the influence of hydrogen on the dangling bond resonance
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 343-347 (1998)
M. S. Brandt, M. W. Bayerl, M. Stutzmann, C. F. O. Graeff | Electric-field effects on excitons in quantum dots
Physical Review B 57 (11), Vol. 57 (1998)
W. Heller, U. Bockelmann, G. Abstreiter | |
| Electroluminescence studies of stacked self-assembled InAs/GaAs-quantum dots embedded in a Bragg resonator
Physica E 2, 594-598 (1998)
M. Arzberger, M. Hauser, G. Böhm, A. Zrenner, G. Abstreiter | Electroluminescent properties of a-SiOx : H alloys
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 1160-1163 (1998)
P. Knapek, K. Luterova, I. Pelant, A. Fejfar, J. Kocka, J. Kudrna, P. Maly, R. Janssen, M. Stutzmann | Electrostatic exciton traps
Phys. stat. sol. (a) 166, R5 (1998)
T. Huber, A. Zrenner, W. Wegscheider, M. Bichler | Empirical spds* tight-binding model for cubic semiconductors: General method and material parameters
Phys. Rev. B 57, 6493-507 (1998)
J. M. Jancu, R. Scholz, F. Beltram, F. Bassani | Erbium doped Si/SiGe waveguide diodes: Optical and electrical characterization
Mat. Res. Soc. Symp. Proc. 533, 139-144 (1998)
E. Neufeld, A. Luigart, A. Sticht, K. Brunner, G. Abstreiter | Exact Kohn-Sham exchange potential and gap problem in semiconductors
In: Conference Proceedings Vol. 61 Advances in Computational Materials Science-II 61 Advances in Computational Materials Science-II (1998)
M. Staedele, J. A. Majewski, P. Vogl, A. Goerling | Far-infrared and transport properties of antidot arrays with broken symmetry
Physica B 249-251, 312-316 (1998)
A. Lorke, S. Wimmer, B. Jager, J. P. Kotthaus, W. Wegscheider, M. Bichler | Fluctuations in quantum dot charging and polarization
Bull. Am. Phys. Soc. 43, 925 (1998)
M. Stopa, J. A. Majewski | Fluctuations in quantum dot charging energy
Physica B, vol. 249-251, 228-232 (1998)
M. Stopa | Fluctuations in quantum dot charging energy and polarization
Semiconductor Science and Technology, vol. 13, A55-A58 (1998)
M. Stopa | Freely suspended two-dimensional electron gases
Physica B 249-251, 784-787 (1998)
R. H. Blick, M. L. Roukes, W. Wegscheider, M. Bichler | |
| Growth and characterization of strained Si1-xGex multi-quantum-well waveguide photodetectors on (1 1 0) Si for 1.3 and 1.55 µm
Physica E 2, 753-757 (1998)
K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele | Highly regular self-organization of step bunches during growth of SiGe on Si (113)
Appl. Phys. Lett. Vol 73 (1998)
A. A. Darhuber, J. Zhu, V. Holy, J. Stangl, P. Mikulik, K. Brunner, G. Abstreiter, G. Bauer | High-resolution thermal processing of semiconductors using pulsed-laser interference patterning
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 651-657 (1998)
M. K. Kelly, J. Rogg, C. E. Nebel, M. Stutzmann, S. Katai | Hydrogen passivation of silicon surfaces: A classical molecular dynamics study
Phys. Rev. B, 13295 (1998)
U. Hansen, P. Vogl | Hysteresis and Spin Transitions in the Fractional Quantum Hall Effect
Phys. Rev. Lett. 81, 2522-2525 (1998)
H. Cho, J. B. Young, W. Kank, K. L. Campman, A. C. Gossard, M. Bichler, W. Wegscheider | III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications
in: Advances in Computational Materials Science - II 61, 71-75 (1998)
G. Zandler, J. A. Majewski, M. Städele, P. Vogl, F. Compagnone | III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications
in: Conference Proceedings Vol. 61 Advances in Computational Materials Science-II 61 Advances in Computational Materials Science-II (1998)
G. Zandler, J. A. Majewski, M. Staedele, P. Vogl, F. Compagnone | In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope
Appl. Phys. Lett. 73 (1998)
R. Held, T. Vancura, T. Heinzel, T. V. R. Held, A. T. Heinzel, M. H. K. Ensslin | Laser-interference crystallization of amorphous silicon: Applications and properties
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 667-674 (1998)
C. E. Nebel, S. Christiansen, H. P. Strunk, B. Dahlheimer, U. Karrer, M. Stutzmann | Lateral ordering of self-assembled Ge islands
Thin Solid Films 336, 252-255 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst | Luminescence from erbium- and oxygen-doped SiGe grown by molecular beam epitaxy
Thin Solid Films 321, 219-222 (1998)
E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter, H. Bay, C. Buchal, H. Holzbrecher | |
| Magnetization of the Fractional Quantum Hall States
Phys. Rev. Lett. 82, 819-822 (1998)
I. Meinzel, T. Hengstmann, D. Grundler, D. Heitmann, W. Wegscheider, M. Bichler | MBE-Growth of Metamorphic InGaAlAs Buffers
Inst. of Physics Conference Series 156, 49-52 (1998)
M. Sexl, G. Böhm, M. Maier, G. Tränkle, G. Weimann, G. Abstreiter | Minority carrier diffusion length in AlGaN: A combined electron beam induced current and transmission microscopy study
SOLID STATE PHENOMENA 63-4 139-146 (1998)
A. Cremades, M. Albrecht, A. Voigt, J. Krinke, R. Dimitrov, O. Ambacher, M. Stutzmann | Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs
in: Proc. of the 28th European Solid State Device Research Conference, 8-10 Sept. 1998, Bordeaux, France, Eds.: A. Touboul, Y. Danto, J.-P. Klein and H. Grünbacher, Edition Frontieres, 75004 Paris - France (1998)
R. Oberhuber, G. Zandler, P. Vogl | Mobilty of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
Appl. Phys. Lett. 73(6), 818-820 (1998)
R. Oberhuber, G. Zandler, P. Vogl | Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates
Thin Solid Films 321, 245-250 (1998)
K. Brunner, H. Dobler, G. Abstreiter, H. Schäfer, B. Lustig | Negative electron affinity of cesiated p-GaN(0001) surfaces
JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B 16 4 2224-2228 (1998)
M. Eyckeler, W. Monch, T. U. Kampen, R. Dimitrov, O. Ambacher, M. Stutzmann | New Resistance Maxima in the Fractional Quantum Hall Effect Regime
Phys. Rev. Lett. 81, 2526-2529 (1998)
S. Kronmüller, W. Dietsche, J. Weis, K. V. Klitzing, W. Wegscheider, M. Bichler | Nitrogen effusion and self-diffusion in (GaN)-N-14/(GaN)-N-15 isotope heterostructures
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 37 5A 2416-2421 (1998)
O. Ambacher, F. Freudenberg, R. Dimitrov, H. Angerer, M. Stutzmann | Nonlinear Electron Transport in an Asymetric Microjunction: A Ballistic Rectifier
Phys. Rev. Lett. 80 (17), 3831-3834 (1998)
A. M. Song, A. Lorke, A. Kriele, J. P. Kotthaus, W. Wegscheider, M. Bichler | Norm-conserving pseudopotentials in the exact exchange Kohn-Sham formalism
in: Proceedings of the 24th Int. Conf. on the Physics of Semicond., 1998, Jerusalem, Israel, World Scientific (1998)
M. Moukara, M. Städele, J. A. Majewski, P. Vogl, A. Görling | |
| Oblique roughness replication in strained SiGe/Si multilayers
Phys. Rev. B 57 (19), 12435-12442 (1998)
V. Holý, A. A. Darhuber, J. Stangl, G. Bauer, J. Nuetzel, G. Abstreiter | Observation of ?105? faceted Ge pyramids inclined towards vicinal Si(001) surfaces
Appl Phys. Lett. 72 (4), 424-426 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter | Observation of step bunches in units of 4 ML on vicinal Si(113) surfaces
Appl Phys. Lett. 73 (17), 2438-2440 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter | On the environment of optically active Er in Si-electroluminescence divices
Appl. Phys. Lett. 72 (7), 809-811 (1998)
S. Lanzerstorfer, L. Palmetshofer, W. Jantsch | Optische Eigenschaften von Quantenpunkten und mögliche Anwendungen
PTB-Bericht, Techn. Univ. Braunschweig, 3-17 (1998)
G. Abstreiter | Perspektiven fuer GaN-basierende Heterostruktur- Bauelemente
Verhandl. DPG (VI) 33, 715 (1998)
F. Compagnone, G. Zandler, J. A. Majewski, M. Staedele, P. Vogl | Photo- and electroluminescence characterization of erbium doped SiGe
J. Vac. Sci. Technol. B 16 (1998)
E. Neufeld, A. Sticht, K. Brunner, H. Riedl, G. Abstreiter | Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond
DIAMOND AND RELATED MATERIALS 7 6 879-883 (1998)
E. Rohrer, C. E. Nebel, M. Stutzmann, A. Floter, R. Zachai, X. Jiang, C. P. Klages | Polarization and band offsets of stacking faults in AlN and GaN
MRS Internet J. Nitride Semicond. Res. 3, 21 (1998)
J. A. Majewski, P. Vogl | Polarization dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells
Superlattices and Microstructures 23, 61-66 (1998)
P. Kruck, A. Weichselbaum, M. Helm, T. Fromherz, G. Bauer, J. Nuetzel, G. Abstreiter | Proceedings of the Seventeenth International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology, Budapest, Hungary August 25-29, 1997
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 VII-VII (1998)
S. Kugler, M. Stutzmann | |
| Quantitative transmission electron microscopy investigation of the relaxation by misfit dislocations confined at the interface of GaN/Al2O3(0001)
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 37 1 84-89 (1998)
S. Kaiser, H. Preis, W. Gebhardt, O. Ambacher, H. Angerer, M. Stutzmann, A. Rosenauer, D. Gerthsen | Quantum dots fabricated by twofold cleaved edge overgrowth
Physica E 2, 7-Jan (1998)
G. Schedelbeck, W. Wegscheider, M. Rother, S. Glutsch, M. Bichler, G. Abstreiter | Raman scattering in annealed isotopic (70Ge)n(74Ge)m superlattices
Physica E 2 291-294 (1998)
E. Silveira, W. Dondl, G. Abstreiter, E. E. Haller | Realization and characterization of Si nanostructures
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 687-693 (1998)
G. Groos, M. Stutzmann | Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance
PHYSICAL REVIEW B 58 8 4892-4902 (1998)
T. Wimbauer, M. S. Brandt, M. W. Bayerl, N. M. Reinacher, M. Stutzmann, D. M. Hofmann, Y. Mochizuki, M. Mizuta | Room temperature 1.54µm electroluminescende from erbium deped Si/SiGe waveguides
Appl. Phys. Lett. 73, 3061-3063 (1998)
E. Neufeld, A. Sticht, A. Luitgart, K. Brunner, G. Abstreiter | Self-Assembled Ge-Dots: Growth, Characterization, Ordering and Applications
J. Vac.Sci. Technol. B 16 (1998)
P. Schittenhelm, C. Engel, F. Findeis, G. Abstreiter, A. A. Darhuber, A. O. Kosogov, P. Werner | Shape, size, strain and correlations in quantum dot systems studied by grazing incidence X-ray scattering methods
Thin solid Films 336, 8-Jan (1998)
T. H. Metzger, I. Kegel, R. Paniago, A. Lorke, J. Peisl, J. Schulze, I. Eisele, P. Schittenhelm, G. Abstreiter | Si-nanostructures made by laser-annealing
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 938-942 (1998)
G. Groos, M. Stutzmann | Size distribution of coherently strained InAs quantum dots
J. Appl. Phys. 84, 4268-4272 (1998)
K. H. Schmidt, G. Medeiros-Ribeiro, U. Kunze, G. Abstreiter, M. Petroff | Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements
APPLIED PHYSICS LETTERS 72 19 2400-2402 (1998)
C. Deger, E. Born, H. Angerer, O. Ambacher, M. Stutzmann, J. Hornsteiner, E. Riha, G. Fischerauer | |
| Spatially resolved exciton trapping in a voltage- controlled lateral superlattice
Appl. Phys. Lett. 73, 154-156 (1998)
S. Zimmermann, G. Schedelbeck, A. O. Govorov, A. Wixforth, J. P. Kotthaus, M. Bichler, W. Wegscheider, G. Abstreiter | Spatially resolved magneto-optics on confined systems
Physica B 256-258, 300-307 (1998)
A. Zrenner, M. Markmann, A. Paassen, A. L. Efros1, W. Wegscheider, G. Böhm | Spatially resolved optical spectroscopy on natural quantum dots
Applied Surface Science 123/124, 356-365 (1998)
A. Zrenner, A. Schaller, M. Markmann, M. Hagn, M. Arzberger, D. Henry, G. Abstreiter, G. Böhm, G. Weimann | Spectroscopy of excitonic Zeeman levels in single quantum dots
Physica E 2, 609-613 (1998)
A. Schaller, A. Zrenner, G. Abstreiter, G. Böhm | Spin splitting in GaAs quantum wire structures
PHYSICA E 2 1-4 929-932 (1998)
E. Silveira, M. K. Kelly, C. E. Nebel, G. Bohm, G. Abstreiter, M. Stutzmann | Spin-dependent processes and Mg-acceptors in GaN single quantum well diodes and p-type GaN films
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 210 2 389-393 (1998)
M. W. Bayerl, M. S. Brandt, H. Angerer, O. Ambacher, M. Stutzmann | Stability and band offsets of AlN/GaN heterostructures: Impact on device performance
Semicond. Science Technol. 13 (8A), A90 - A92 (1998)
J. A. Majewski, G. Zandler, P. Vogl | Stability and band offsets of AlN/GaN heterostructures: Impact on device performance
Semicond. Sci. Technol. 13, A90 (1998)
J. A. Majewski, G. Zandler, P. Vogl | Structural characterization of self-assembled Ge dot multilayers by x-ray diffraction and reflectivity methods
Physica E, 2. 789-793 (1998)
A. A. Darhuber, V. Holy, P. Schittenhelm, J. Stangl, I. Kegel, Z. Kovats, T. H. Metzger, G. Bauer, G. Abstreiter, G. Grübel | Subband structure and mobilty of two-dimensional holes in strained Si/SiGe MOSFETs
Phys. Rev. B 58 (15), 9941-9948 (1998)
R. Oberhuber, G. Zandler, P. Vogl | Superexchange in porphyrin-quinone complexes
J. Lumin. 76-77, 482-5 (1998)
M. Schreiber, C. Fuchs, R. Scholz | |
| Superlattice calculation in an empirical spds* tight-binding model
in: Tight-Binding Approach to Computational Materials Science 491, ed. by E.A. Turchi, A. Gonis, L. Colombo, Mat. Res. Soc. Symp. Proc. 383-8 (1998)
R. Scholz, J. M. Jancu, F. Bassani | The influence of the Al-content on the optical gain in AlGaN heterostructures
JOURNAL OF CRYSTAL GROWTH 189 692-695 (1998)
J. Holst, L. Eckey, A. Hoffmann, O. Ambacher, M. Stutzmann | The Origin of Various PL-Bands in Si/Ge Strain-Symmetrized Superlattices
Microelectronic Engineering 43, 165-170 (1998)
J. Olajos, J. Nilson, M. Gail, G. Abstreiter | Theory of internal polarization fields in GaN and AlN interfaces and stacking fault
in: Proceedings of the 24th Int. Conf. on the Physics of Semicond., 1998, Jerusalem, Israel, World Scientific (1998)
J. A. Majewski, P. Vogl | Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire
PHYSICAL REVIEW B 57 12 7066-7070 (1998)
S. Pau, Z. X. Liu, J. Kuhl, J. Ringling, H. T. Grahn, M. A. Khan, C. J. Sun, O. Ambacher, M. Stutzmann | Time-resolved spectroscopy of single quantum dots
Physica E 2, 588-593 (1998)
P. Roussignol, W. Heller, A. Filoramo, U. Bockelmann | Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with step bunches
Appl. Phys. Lett. 73 (59), 620-622 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter | Ultrafast coherent vibronic dynamics in color centers
J. Lumin. 76-77, 48-51 (1998)
M. Schreiber, R. Scholz | Ultrafast electron transfer of betaine-30
J. Lumin. 76-77, 404-7 (1998)
R. Scholz, M. Darwish, M. Schreiber | Vibrational properties of siloxene: isotope substitution studies
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 503-506 (1998)
N. Zamanzadeh-Hanebuth, M. S. Brandt, M. Stutzmann | Voltage-controlled trapping of excitons and „storage of light“ in lateral supelattices
Physica E 2, 35 (1998)
S. Zimmermann, A. O. Govorov, A. Wixforth, C. Rocke, W. Hansen, J. P. Kotthaus | |
| Von künstlichen Atomen zu Molekülen
Physikalische Blätter 54 1115-1117 (1998)
G. Abstreiter | Von künstlichen Atomen zu Molekülen
TUM-Mitteilungen 4, 26 (1998)
G. Abstreiter | X-ray reflectivity investigations of the interface morphology on strained SiGe/Si multilayers
Semicond. Sci. Technol. 13, 590-598 (1998)
V. Holý, A. A. Darhuber, J. Stangl, G. Bauer, J. Nuetzel, G. Abstreiter |
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Walter Schottky Institut