Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


WSI-related Publications for year:



A relativistic self-interaction-free density functional formalism
Phys. Rev. A52, 282 (1995)
M. Rieger, P. Vogl
Analysis and optimization of bulk electro-absorption modulators
IEEE Journal of Quantum Electronics 31, 261 (1995)
P. Lugli, D. Meglio, R. Sabella, O. Sahlin
Angular dispersion of confined optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy
Solid State Communications 93 (1995)
M. Zunke, R. Schorer, G. Abstreiter, W. Klein, G. Weimann, M. P. Chamberlain
Antidot superlattices in two-dimensional hole gases confined in strained germanium layers
Semicond. Sci. Technol. 10, 1413-1417 (1995)
D. Többen, M. Holzmann, G. Abstreiter, A. Kriele, H. Lorenz, J. P. Kotthaus, F. Schäffler, Y. H. Xie, P. J. Silvermann, D. Monroe
ASYNCHRONOUS TRANSFER MODE
COMMUTATION and TRANSMISSION 17 45-58 (1995)
H. SEGUIN, M. LEMONIER, M. STUTZMANN, P. GRAFF, D. HERZ
Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure
Semicond. Sci. Technol. 10, 711-714 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Binding of electrons and holes at quantum wires formed by T-intersecting quantum wells
Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates 298, Rottach-Egern, Germany, Feb. 20 - 24 (1995)
L. Pfeiffer, H. Baranger, D. Gershoni, K. Smith, W. Wegscheider
Broad-band wavelength-tunable twin-guide lasers
Optoelectronics - Devices and Technologies 10, 27-38 (invited) (1995)
M. C. Amann
Comparison of P and Sb as n-dopants for Si molecular beam epitaxy
J. Appl. Phys. 78 (2), 937-940 (1995)
J. Nuetzel, G. Abstreiter
CORRELATION BETWEEN THE LUMINESCENCE AND RAMAN PEAKS IN QUANTUM-CONFINED SYSTEMS
THIN SOLID FILMS 255 1-2 241-245 (1995)
P. DEAK, Z. HAJNAL, M. STUTZMANN, H. D. FUCHS
Cyclophanes as neutral receptors for quaternary ammonium and iminium cations in chloroform solution.
Journal of Organic Chemistry 60, 8313-8314 (1995)
A. Cattani-Scholz, A. D. Cort, L. Mandolini
DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
PHYSICAL REVIEW B 52 7 4680-4683 (1995)
C. F. O. GRAEFF, M. S. BRANDT, M. STUTZMANN, M. J. POWELL
Determination of the intersubband lifetime in Si/SiGe quantum wells
Appl. Phys. Lett. 66 (24), 3313-3315 (1995)
W. Heiss, E. Gornik, H. Hertle, B. Murdin, G. M. H. Knippels, C. J. G. M. Langerak, F. Schäffler, C. R. Pidgeon
Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells
Phys. Rev. B 52 (16), 12 153-12 157 (1995)
L. V. Butov, A. Zrenner, G. Abstreiter, A. V. Petinova, K. Eberl
Distributed forward coupled (DFC) laser
IEEE J. of Selected Topics in Quantum Electronics 1, 387-395 (1995)
M. C. Amann, B. Borchert, S. Illek, T. Wolf
Doppler broadening and collisional relaxation effects in a lasing-without-inversion experiment
Phys. Rev. A51, 4030 (1995)
M. Graf, E. Arimondo, E. S. Fry, D. E. Nikonov, G. G. Padmabandu, M. O. Scully, S. Zhu
Dynamics of exciton formation and relaxation in semiconductors
in: Proc. 9th Internat. Conf. on Hot Carriers in Semiconductors (Chicago, 1995), ed.by K. Hess, Plenum, New York (1995)
P. E. Selbmann, M. Gulia, F. Rossi, E. Molinari, P. Lugli
Effective masses in SiGe
In: Properties of strained and relaxed Silicon Germanium., IEE, London, 1995. 103-109. (1995)
J. Nuetzel, C. M. Engelhardt, G. Abstreiter
Electric-field-induced exciton transport in coupled quantum well structures
Appl. Phys. Lett. 67 (2), 232-234 (1995)
M. Hagn, A. Zrenner, G. Böhm, G. Weimann
Electromagnetic fields and dielectric response in empirical tight binding theory
Phys. Rev. B 51, 4940 (1995)
M. Graf, P. Vogl
Electronic and structural properties of semiconductors with nonlocal exchange-correlation-potentials
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 189, (1995)
A. Seidl, M. Rieger, J. A. Majewski, P. Vogl
Electronic properties of InAs/antimonide-based short period tunneling structures
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 711 (1995)
J. A. Majewski
Excitons in high magnetic fields in disordered two-dimensional systems: Weak-localization effects for composite neutral particles
Phys. Rev. B 52 (4), R2261-R2264 (1995)
P. I. Arseyev, A. B. Dzyubenko
Fabrication and characterization of locally grown SiGe wires and dots
Mat. Sci. and Technol. 11 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele
Fabrication and Characterization of Si/SiGe Nanometer Structures
Microelectronic Engineering 27, 83-86 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele
Fabrication of lateral npn-phototransistors with high gain and sub-µm spatial resolution
Appl. Phys. Lett. 66 (1995)
P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Weimann
Far field characterization of diffracting circular apertures
Appl. Phys. Lett. 67 (23), 3408-3410 (1995)
C. Obermüller, K. Karraï
Ferromagnetism in Cr-based diluted magnetic semiconductors
Acta Physica Polonica A 88, Vol.88, 683 (1995)
J. Blinowski, P. Kacman, J. A. Majewski
First-principles studies of structural and optical properties of crystalline poly (para phenylene)
Phys. Rev. B51, 9668 (1995)
C. Ambrosch-Draxl, J. A. Majewski, P. Vogl, G. Leising
FMCW-Lidar with tunable twin-guide laser diode
In: Trends in Optical Fibre Metrology and Standards (ed. O. D. D. Soares) 285, 285, Kluwer Academic Publishers, Dordrecht, NL. (1995)
A. Dieckmann, M. C. Amann
GaAs/AlGaAs quantum wire lasers and other low-dimensional structures fabricated by cleaved edge overgrowth
Festkörperprobleme (Advances in Solid State Physics) 35, 155-174 (1995)
W. Wegscheider, L. N. Pfeiffer, K. W. West
GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth
J. of Crystal Growth 150, 285-292 (1995)
W. Wegscheider, L. N. Pfeiffer, A. Pinczuk, K. W. West, M. M. Dignam, R. Hull, R. E. Leibenguth
Germanium70Ge/74Ge isotope heterostructures: An approach to self-diffusion studies
Phys. Rev. B 51 (1995)
H. D. Fuchs, W. Walukiewicz, E. E. Haller, W. Dondl, R. Schorer, G. Abstreiter, A. I. Rudnev, A. V. Tikhomirov, V. I. Ozhogin
Grenzflächenstabilität und elektronische Struktur von SiC/GaN-(001)-Übergittern
Verhandl. DPG (VI), 30, 1131 (1995)
M. Städele, P. Vogl
Growth and properties of high mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates
J. of Crystal Growth 150, 1011-1014 (1995)
J. Nuetzel, C. M. Engelhardt, R. Wiesner, D. Többen, M. Holzmann, G. Abstreiter
Hole-phonon scattering rates in gallium arsenide
J. Appl. Phys. 77, 3219-31 (1995)
R. Scholz
In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation
Appl. Phys. Lett. 67 (11), 1579-1581 (1995)
D. Többen, D. K. D. Vries, A. D. Wieck, M. Holzmann, G. Abstreiter, F. Schäffler
Investigation of strain relaxation of Ge1-xSix epilayers on Ge(001) by high-resolution x-ray reciprocal space mapping
Semicond. Sci. Technol. 10, 1621-1628 (1995)
J. H. Li, V. Holý, G. Bauer, J. Nuetzel, G. Abstreiter
Local epitaxy of Si/SiGe wires and dots
J. of Cryst. Growth 157, 270-275 (1995)
J. Brunner, W. Jung, P. Schittenhelm, M. Gail, G. Abstreiter, J. Gonderman, B. Hadam, T. Koester, B. Spangenberg, H. G. Roskos, H. Kurz, H. Gossner, I. Eisele
Magnetic-Field induced Intersubband Resonances in AlGaAs/GaAs Quantum Wells
Europhysics Letters 30, 111-116 (1995)
C. Gauer, A. Wixforth, J. P. Kotthaus, G. Abstreiter, G. Weimann, W. Schlapp
MBE-growth of ternary SnGeSiGe superlattices
J. of Cryst. Growth 157, 400-404 (1995)
W. Dondl, E. Silveira, G. Abstreiter
Microscopic calculation of the electron optical-phonon interaction in ultrathin GaAs/AlGaAs alloy quantum well systems
Phys. Rev. B52, 7046 (1995)
L. Insook, S. M. Goodnick, M. Gulia, E. Molinari, P. Lugli
Microwave Fabry-Pérot Transmission through YBaCuO Superconducting Thin Films
Phys. Rev. Lett. 75 (21), 3934-3937 (1995)
H. E. Porteanu, K. Karraï, R. Seifert, F. Koch, P. Berberich, H. Kinder
Mikroskopische Analyse des Rauschverhaltens in Bauelementen mit der Methode Zellulärer Automaten
Verhandlg. der Dt. Phys. Ges. (VI) 30, 1306, Berlin (1995)
A. Rein, G. Zandler, M. Saraniti, P. Vogl
Molecular beam epitaxial grown Si1-xCx layers on Si(001) as a substrate for MOWCVD of diamond
J. of Cryst. Growth 157, 426-430 (1995)
T. Gutheit, M. Heinau, H. J. Füsser, C. Wild, P. Koidl, G. Abstreiter
Nanometer resolved photocurrent and local minority carrier transport in GaAs p-n junctions
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 249 (1995)
G. Zandler, G. Kolb, K. Karrai, G. Abstreiter, P. Vogl
One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures
Appl. Phys. Lett. 66 (1995)
M. Holzmann, D. Többen, G. Abstreiter, M. Wendel, H. Lorenz, J. P. Kotthaus, F. Schäffler
Optical and acoustical phonons in SiGe; Raman spectroscopy
(1995)
R. Schorer
Optical and electronic properties of crystalline poly(para-phenylene) by first-principles calculations and experimental results
No Reference given. (1995)
C. Ambrosch-Draxl, J. A. Majewski, P. Vogl, G. Leising, R. Abt, K. D. Aichholzer, 4. (1995)
Optical anisotropy of Si/Ge superlattices: Resonant Raman scattering in in-plane geometry
Solid State Communications 93 (1995)
R. Schorer, G. Abstreiter, H. Kibbel, H. Presting, C. Tserbak, G. Theodorou
Optical near-field induced current microscopy
Ultramicroscopy 61, 299-304 (1995)
K. Karraï, G. Kolb, G. Abstreiter, A. Schmeller
Optical properties of silicon nanostructures
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 192 2 273-286 (1995)
M. Stutzmann
Optical study of diffusion limitation in MBE growth of SiGe quantum wells
Semicond. Sci. Technol. 10, 319-325 (1995)
M. Gail, J. Brunner, J. Nuetzel, G. Abstreiter, J. Engvall, J. Olajos, H. Grimmeiss
Optically detected cyclotron resonance on GaAs/AlxGaAs1-x quantum wells and quantum wires
Phys. Rev. B 52 (15), 11 313-11 318 (1995)
D. M. Hofmann, M. Drechsler, C. Wetzel, B. K. Meyer, F. Hirler, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann
Phase-noise-limited accuracy of distance measurements in a frequency-modulated continuous-wave LIDAR with tunable twin-guide laser diode
Optical Engineering 34, 896-903 (1995)
A. Dieckmann, M. C. Amann
Photodetector with subwavelength spatial resolution
Ultramicroscopy 57, 208-211 (1995)
G. Kolb, C. Obermüller, K. Karraï, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)
Appl. Phys. Lett. 67 (9), 1292-1294 (1995)
P. Schittenhelm, M. Gail, J. Brunner, J. Nuetzel, G. Abstreiter
Piezoelectric tip-sample distance control for near field optical microscopes
Appl. Phys. Lett. 66 (14), 1842-1844 (1995)
K. Karraï, R. D. Grober
Piezo-electric tuning fork tip-sample distance control for near field optical microscopes
Ultramicroscopy 61, 197-205 (1995)
K. Karraï, R. D. Grober
RADIATIVE AND NONRADIATIVE RECOMBINATION IN POROUS SILICON - WHAT CAN WE LEARN FROM SPIN-RESONANCE
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 97-106 (1995)
M. STUTZMANN, M. S. BRANDT
Resonant inelastic light scattering by plasmons at the crossover from two- to one-dimensional behavior
Solid State Communications 93 (1995)
G. Schedelbeck, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann
RESONANTLY EXCITED PHOTOLUMINESCENCE IN POROUS SILICON
THIN SOLID FILMS 255 1-2 250-253 (1995)
M. ROSENBAUER, D. H. LEACH, M. SENDOVAVASSILEVA, S. FINKBEINER, M. STUTZMANN
RESONANTLY EXCITED PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON
PHYSICAL REVIEW B 51 16 10539-10547 (1995)
M. ROSENBAUER, S. FINKBEINER, E. BUSTARRET, J. WEBER, M. STUTZMANN
Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy
Journal of Crystal Growth 157, 15-20 (1995)
H. Presting, T. Zinke, O. Brux, G. Abstreiter, H. Kibbel, M. Jaros
Room-temperature photoluminescence of GemSinGem structures
Appl. Phys. Lett. 66 (22), 2978-2980 (1995)
M. Gail, G. Abstreiter, J. Olajos, J. Engvall, H. Grimmeiss, H. Kibbel, H. Presting
Self-assembling InP/In0.48Ga0.52P quantum dots grown by MBE
Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates 298, Rottach-Egern, Germany, Feb. 20 - 24 (1995)
A. Kurtenbach, K. Eberl, K. Brunner, G. Abstreiter
Self-organized MBE growth of Ge-rich SiGe-dots on Si(100)
J. of Cryst. Growth 157, 260-264 (1995)
P. Schittenhelm, M. Gail, G. Abstreiter
Si/Si1-xGex multiquantum wells: a route to infrared detectors
Vibrational Spectroscopy 8, 109-119 (1995)
T. Fromherz, J. Nuetzel, H. Hertle, M. Helm, G. Bauer, G. Abstreiter
SiGe Quantum Wells on (110) Si Grown by Molecular Beam Epitaxy
J. of Crystal Growth 150, 1050-1054 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl
SiGe quantum wells on (110) Si grown molecular beam epitaxy
J. Crystal Growth 150, 1050 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl
SiGe Wires and Dots Grown by Local Epitaxy
J. of Crystal Growth 150, 1060-1064 (1995)
J. Brunner, P. Schittenhelm, J. Gondermann, B. Spangenberg, B. Hadam, T. Köster, H. G. Roskos, H. Kurz, H. Gossner, I. Eisele, G. Abstreiter
Simulation of molecular beam epitaxial growth over nonplanar surfaces
Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates 298, Rottach-Egern, Germany, Feb. 20 - 24 (1995)
W. Wegscheider, L. Pfeiffer, K. West
Spin-dependent transport in SiC and III-V semiconductor devices
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS 196- 1915-1922 (1995)
N. M. Reinacher, M. S. Brandt, M. Stutzmann
Stability and band offsets of heterovalent SiC/GaN interfaces
Acta Physics Polonica A88 (1995)
M. Städele, J. A. Majewski, P. Vogl
Stationary lattice mobility of holes in gallium arsenide
J. Appl. Phys. 77, 3232-42 (1995)
R. Scholz
Stationary transport of holes in gallium arsenide
in: Quantum Transport in Ultrasmall Devices 342, Proceedings of NATO ASI, Vol. 342, ed. by D.K. Ferry, H.L. Grubin, C. Jacoboni, A.-P. Jauho (1995)
R. Scholz
Strain relaxation of Ge1-xSix buffer systems grown on Ge (001)
Appl. Phys. Lett. 67 (6), 789-791 (1995)
J. H. Li, V. Holy, G. Bauer, J. Nuetzel, G. Abstreiter
Strained Si1-xGex multi-quantum well waveguide structures on (110) Si
Appl. Phys. Lett. 66 (17), 2226-2228 (1995)
K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele
STRUCTURAL AND LUMINESCENCE STUDIES OF STAIN-ETCHED AND ELECTROCHEMICALLY ETCHED GERMANIUM
THIN SOLID FILMS 255 1-2 282-285 (1995)
M. SENDOVAVASSILEVA, N. TZENOV, D. DIMOVAMALINOVSKA, M. ROSENBAUER, M. STUTZMANN, K. V. JOSEPOVITS
Superexchange in diluted magnetic semiconductors
Mat. Sci. For., Vols. 182-184, 779 (1995)
J. Blinowski, P. Kacman, J. A. Majewski
Time resolved photoluminescence of spatially direct and indirect transitions in GaAs/
Phys. Rev. B 51 (1995)
G. Abstreiter
Time-resolved photoluminescence of pseudomorphic SiGe quantum wells
Phys. Rev. B 52, 16 608-16 611 (1995)
A. Zrenner, B. Fröhlich, J. Brunner, G. Abstreiter
Tip-sample distance control for near-field scanning optical microscopes
Proc. of the SPIE `95 2535, Vol. 2535, Near-Field Optics, 69-81 (1995)
K. Karraï, R. D. Grober
Transmitted radiation through a subwavelength-sized tapered optical fiber tip
Ultramicroscopy 61, 171-177 (1995)
C. Obermüller, K. Karraï, G. Kolb, G. Abstreiter
Transport properties of a Si/SiGe quantum point-contact in the presence of impurities
Phys. Rev. B 52 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler
TRANSPORT-PROPERTIES OF SILOXENE
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 107-110 (1995)
M. ROSENBAUER, A. HOPNER, U. DETTLAFFWEGLIKOWSKA, M. STUTZMANN
TRIPLET EXCITONS IN POROUS SILICON AND SILOXENE
SOLID STATE COMMUNICATIONS 93 6 473-477 (1995)
M. S. BRANDT, M. STUTZMANN
Tunable laser diodes
Conference on Lasers and Electro-Optics (CLEO)- Pacific Rim, Makuhari, Japan (1995)
M. C. Amann
Two-dimensional infrared photonic band gap structure based on porous silicon
Appl. Phys. Lett. 66 (24), 3254-3256 (1995)
U. Grüning, V. Lehmann, C. M. Engelhardt
Ultrafast relaxation of photoexcited carrier in semiconductor quantum wires: A Monte Carlo approach
Phys. Rev. B52, 5183 (1995)
L. Rota, F. Rossi, P. Lugli, E. Molinari
UNTITLED
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 148 2 U1-U1 (1995)
M. Stutzmann
Valley mixing in resonant tunneling diodes with applied hydrostatic pressure
Semicond. Sci. and Techn. 10, 1673 (1995)
A. Di Carlo, P. Lugli
Wannier-Stark localization in superlattices
Jap. J. Appl. Phys. 34, 4519 (1995)
C. Hamaguchi, M. Yamaguchi, H. Nagasawa, M. Morifuji, A. Di Carlo, P. Vogl, G. Böhm, G. Tränkle, G. Weimann, Y. Nishikawa, S. Muto
Wavelength tunable laser diodes and their applications
In: Trends in Optical Fibre Metrology and Standards, (1995) 217-240 (1995)
M. C. Amann





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