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WSI-related Publications for year:
A relativistic self-interaction-free density functional formalism
Phys. Rev. A52, 282 (1995)
M. Rieger, P. Vogl | Analysis and optimization of bulk electro-absorption modulators
IEEE Journal of Quantum Electronics 31, 261 (1995)
P. Lugli, D. Meglio, R. Sabella, O. Sahlin | Angular dispersion of confined optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy
Solid State Communications 93 (1995)
M. Zunke, R. Schorer, G. Abstreiter, W. Klein, G. Weimann, M. P. Chamberlain | Antidot superlattices in two-dimensional hole gases confined in strained germanium layers
Semicond. Sci. Technol. 10, 1413-1417 (1995)
D. Többen, M. Holzmann, G. Abstreiter, A. Kriele, H. Lorenz, J. P. Kotthaus, F. Schäffler, Y. H. Xie, P. J. Silvermann, D. Monroe | ASYNCHRONOUS TRANSFER MODE
COMMUTATION and TRANSMISSION 17 45-58 (1995)
H. SEGUIN, M. LEMONIER, M. STUTZMANN, P. GRAFF, D. HERZ | Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure
Semicond. Sci. Technol. 10, 711-714 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler | Binding of electrons and holes at quantum wires formed by T-intersecting quantum wells
Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates 298, Rottach-Egern, Germany, Feb. 20 - 24 (1995)
L. Pfeiffer, H. Baranger, D. Gershoni, K. Smith, W. Wegscheider | Broad-band wavelength-tunable twin-guide lasers
Optoelectronics - Devices and Technologies 10, 27-38 (invited) (1995)
M. C. Amann | Comparison of P and Sb as n-dopants for Si molecular beam epitaxy
J. Appl. Phys. 78 (2), 937-940 (1995)
J. Nuetzel, G. Abstreiter | CORRELATION BETWEEN THE LUMINESCENCE AND RAMAN PEAKS IN QUANTUM-CONFINED SYSTEMS
THIN SOLID FILMS 255 1-2 241-245 (1995)
P. DEAK, Z. HAJNAL, M. STUTZMANN, H. D. FUCHS | Cyclophanes as neutral receptors for quaternary ammonium and iminium cations in chloroform solution.
Journal of Organic Chemistry 60, 8313-8314 (1995)
A. Cattani-Scholz, A. D. Cort, L. Mandolini | |
| DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
PHYSICAL REVIEW B 52 7 4680-4683 (1995)
C. F. O. GRAEFF, M. S. BRANDT, M. STUTZMANN, M. J. POWELL | Determination of the intersubband lifetime in Si/SiGe quantum wells
Appl. Phys. Lett. 66 (24), 3313-3315 (1995)
W. Heiss, E. Gornik, H. Hertle, B. Murdin, G. M. H. Knippels, C. J. G. M. Langerak, F. Schäffler, C. R. Pidgeon | Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells
Phys. Rev. B 52 (16), 12 153-12 157 (1995)
L. V. Butov, A. Zrenner, G. Abstreiter, A. V. Petinova, K. Eberl | Distributed forward coupled (DFC) laser
IEEE J. of Selected Topics in Quantum Electronics 1, 387-395 (1995)
M. C. Amann, B. Borchert, S. Illek, T. Wolf | Doppler broadening and collisional relaxation effects in a lasing-without-inversion experiment
Phys. Rev. A51, 4030 (1995)
M. Graf, E. Arimondo, E. S. Fry, D. E. Nikonov, G. G. Padmabandu, M. O. Scully, S. Zhu | Dynamics of exciton formation and relaxation in semiconductors
in: Proc. 9th Internat. Conf. on Hot Carriers in Semiconductors (Chicago, 1995), ed.by K. Hess, Plenum, New York (1995)
P. E. Selbmann, M. Gulia, F. Rossi, E. Molinari, P. Lugli | Effective masses in SiGe
In: Properties of strained and relaxed Silicon Germanium., IEE, London, 1995. 103-109. (1995)
J. Nuetzel, C. M. Engelhardt, G. Abstreiter | Electric-field-induced exciton transport in coupled quantum well structures
Appl. Phys. Lett. 67 (2), 232-234 (1995)
M. Hagn, A. Zrenner, G. Böhm, G. Weimann | Electromagnetic fields and dielectric response in empirical tight binding theory
Phys. Rev. B 51, 4940 (1995)
M. Graf, P. Vogl | Electronic and structural properties of semiconductors with nonlocal exchange-correlation-potentials
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 189, (1995)
A. Seidl, M. Rieger, J. A. Majewski, P. Vogl | Electronic properties of InAs/antimonide-based short period tunneling structures
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 711 (1995)
J. A. Majewski | |
| Excitons in high magnetic fields in disordered two-dimensional systems: Weak-localization effects for composite neutral particles
Phys. Rev. B 52 (4), R2261-R2264 (1995)
P. I. Arseyev, A. B. Dzyubenko | Fabrication and characterization of locally grown SiGe wires and dots
Mat. Sci. and Technol. 11 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele | Fabrication and Characterization of Si/SiGe Nanometer Structures
Microelectronic Engineering 27, 83-86 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele | Fabrication of lateral npn-phototransistors with high gain and sub-µm spatial resolution
Appl. Phys. Lett. 66 (1995)
P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Weimann | Far field characterization of diffracting circular apertures
Appl. Phys. Lett. 67 (23), 3408-3410 (1995)
C. Obermüller, K. Karraï | Ferromagnetism in Cr-based diluted magnetic semiconductors
Acta Physica Polonica A 88, Vol.88, 683 (1995)
J. Blinowski, P. Kacman, J. A. Majewski | First-principles studies of structural and optical properties of crystalline poly (para phenylene)
Phys. Rev. B51, 9668 (1995)
C. Ambrosch-Draxl, J. A. Majewski, P. Vogl, G. Leising | FMCW-Lidar with tunable twin-guide laser diode
In: Trends in Optical Fibre Metrology and Standards (ed. O. D. D. Soares) 285, 285, Kluwer Academic Publishers, Dordrecht, NL. (1995)
A. Dieckmann, M. C. Amann | GaAs/AlGaAs quantum wire lasers and other low-dimensional structures fabricated by cleaved edge overgrowth
Festkörperprobleme (Advances in Solid State Physics) 35, 155-174 (1995)
W. Wegscheider, L. N. Pfeiffer, K. W. West | GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth
J. of Crystal Growth 150, 285-292 (1995)
W. Wegscheider, L. N. Pfeiffer, A. Pinczuk, K. W. West, M. M. Dignam, R. Hull, R. E. Leibenguth | Germanium70Ge/74Ge isotope heterostructures: An approach to self-diffusion studies
Phys. Rev. B 51 (1995)
H. D. Fuchs, W. Walukiewicz, E. E. Haller, W. Dondl, R. Schorer, G. Abstreiter, A. I. Rudnev, A. V. Tikhomirov, V. I. Ozhogin | |
| Grenzflächenstabilität und elektronische Struktur von SiC/GaN-(001)-Übergittern
Verhandl. DPG (VI), 30, 1131 (1995)
M. Städele, P. Vogl | Growth and properties of high mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates
J. of Crystal Growth 150, 1011-1014 (1995)
J. Nuetzel, C. M. Engelhardt, R. Wiesner, D. Többen, M. Holzmann, G. Abstreiter | Hole-phonon scattering rates in gallium arsenide
J. Appl. Phys. 77, 3219-31 (1995)
R. Scholz | In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation
Appl. Phys. Lett. 67 (11), 1579-1581 (1995)
D. Többen, D. K. D. Vries, A. D. Wieck, M. Holzmann, G. Abstreiter, F. Schäffler | Investigation of strain relaxation of Ge1-xSix epilayers on Ge(001) by high-resolution x-ray reciprocal space mapping
Semicond. Sci. Technol. 10, 1621-1628 (1995)
J. H. Li, V. Holý, G. Bauer, J. Nuetzel, G. Abstreiter | Local epitaxy of Si/SiGe wires and dots
J. of Cryst. Growth 157, 270-275 (1995)
J. Brunner, W. Jung, P. Schittenhelm, M. Gail, G. Abstreiter, J. Gonderman, B. Hadam, T. Koester, B. Spangenberg, H. G. Roskos, H. Kurz, H. Gossner, I. Eisele | Magnetic-Field induced Intersubband Resonances in AlGaAs/GaAs Quantum Wells
Europhysics Letters 30, 111-116 (1995)
C. Gauer, A. Wixforth, J. P. Kotthaus, G. Abstreiter, G. Weimann, W. Schlapp | MBE-growth of ternary SnGeSiGe superlattices
J. of Cryst. Growth 157, 400-404 (1995)
W. Dondl, E. Silveira, G. Abstreiter | Microscopic calculation of the electron optical-phonon interaction in ultrathin GaAs/AlGaAs alloy quantum well systems
Phys. Rev. B52, 7046 (1995)
L. Insook, S. M. Goodnick, M. Gulia, E. Molinari, P. Lugli | Microwave Fabry-Pérot Transmission through YBaCuO Superconducting Thin Films
Phys. Rev. Lett. 75 (21), 3934-3937 (1995)
H. E. Porteanu, K. Karraï, R. Seifert, F. Koch, P. Berberich, H. Kinder | Mikroskopische Analyse des Rauschverhaltens in Bauelementen mit der Methode Zellulärer Automaten
Verhandlg. der Dt. Phys. Ges. (VI) 30, 1306, Berlin (1995)
A. Rein, G. Zandler, M. Saraniti, P. Vogl | |
| Molecular beam epitaxial grown Si1-xCx layers on Si(001) as a substrate for MOWCVD of diamond
J. of Cryst. Growth 157, 426-430 (1995)
T. Gutheit, M. Heinau, H. J. Füsser, C. Wild, P. Koidl, G. Abstreiter | Nanometer resolved photocurrent and local minority carrier transport in GaAs p-n junctions
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 249 (1995)
G. Zandler, G. Kolb, K. Karrai, G. Abstreiter, P. Vogl | One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures
Appl. Phys. Lett. 66 (1995)
M. Holzmann, D. Többen, G. Abstreiter, M. Wendel, H. Lorenz, J. P. Kotthaus, F. Schäffler | Optical and acoustical phonons in SiGe; Raman spectroscopy
(1995)
R. Schorer | Optical and electronic properties of crystalline poly(para-phenylene) by first-principles calculations and experimental results
No Reference given. (1995)
C. Ambrosch-Draxl, J. A. Majewski, P. Vogl, G. Leising, R. Abt, K. D. Aichholzer, 4. (1995) | Optical anisotropy of Si/Ge superlattices: Resonant Raman scattering in in-plane geometry
Solid State Communications 93 (1995)
R. Schorer, G. Abstreiter, H. Kibbel, H. Presting, C. Tserbak, G. Theodorou | Optical near-field induced current microscopy
Ultramicroscopy 61, 299-304 (1995)
K. Karraï, G. Kolb, G. Abstreiter, A. Schmeller | Optical properties of silicon nanostructures
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 192 2 273-286 (1995)
M. Stutzmann | Optical study of diffusion limitation in MBE growth of SiGe quantum wells
Semicond. Sci. Technol. 10, 319-325 (1995)
M. Gail, J. Brunner, J. Nuetzel, G. Abstreiter, J. Engvall, J. Olajos, H. Grimmeiss | Optically detected cyclotron resonance on GaAs/AlxGaAs1-x quantum wells and quantum wires
Phys. Rev. B 52 (15), 11 313-11 318 (1995)
D. M. Hofmann, M. Drechsler, C. Wetzel, B. K. Meyer, F. Hirler, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann | Phase-noise-limited accuracy of distance measurements in a frequency-modulated continuous-wave LIDAR with tunable twin-guide laser diode
Optical Engineering 34, 896-903 (1995)
A. Dieckmann, M. C. Amann | |
| Photodetector with subwavelength spatial resolution
Ultramicroscopy 57, 208-211 (1995)
G. Kolb, C. Obermüller, K. Karraï, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)
Appl. Phys. Lett. 67 (9), 1292-1294 (1995)
P. Schittenhelm, M. Gail, J. Brunner, J. Nuetzel, G. Abstreiter | Piezoelectric tip-sample distance control for near field optical microscopes
Appl. Phys. Lett. 66 (14), 1842-1844 (1995)
K. Karraï, R. D. Grober | Piezo-electric tuning fork tip-sample distance control for near field optical microscopes
Ultramicroscopy 61, 197-205 (1995)
K. Karraï, R. D. Grober | RADIATIVE AND NONRADIATIVE RECOMBINATION IN POROUS SILICON - WHAT CAN WE LEARN FROM SPIN-RESONANCE
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 97-106 (1995)
M. STUTZMANN, M. S. BRANDT | Resonant inelastic light scattering by plasmons at the crossover from two- to one-dimensional behavior
Solid State Communications 93 (1995)
G. Schedelbeck, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann | RESONANTLY EXCITED PHOTOLUMINESCENCE IN POROUS SILICON
THIN SOLID FILMS 255 1-2 250-253 (1995)
M. ROSENBAUER, D. H. LEACH, M. SENDOVAVASSILEVA, S. FINKBEINER, M. STUTZMANN | RESONANTLY EXCITED PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON
PHYSICAL REVIEW B 51 16 10539-10547 (1995)
M. ROSENBAUER, S. FINKBEINER, E. BUSTARRET, J. WEBER, M. STUTZMANN | Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy
Journal of Crystal Growth 157, 15-20 (1995)
H. Presting, T. Zinke, O. Brux, G. Abstreiter, H. Kibbel, M. Jaros | Room-temperature photoluminescence of GemSinGem structures
Appl. Phys. Lett. 66 (22), 2978-2980 (1995)
M. Gail, G. Abstreiter, J. Olajos, J. Engvall, H. Grimmeiss, H. Kibbel, H. Presting | Self-assembling InP/In0.48Ga0.52P quantum dots grown by MBE
Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates 298, Rottach-Egern, Germany, Feb. 20 - 24 (1995)
A. Kurtenbach, K. Eberl, K. Brunner, G. Abstreiter | |
| Self-organized MBE growth of Ge-rich SiGe-dots on Si(100)
J. of Cryst. Growth 157, 260-264 (1995)
P. Schittenhelm, M. Gail, G. Abstreiter | Si/Si1-xGex multiquantum wells: a route to infrared detectors
Vibrational Spectroscopy 8, 109-119 (1995)
T. Fromherz, J. Nuetzel, H. Hertle, M. Helm, G. Bauer, G. Abstreiter | SiGe Quantum Wells on (110) Si Grown by Molecular Beam Epitaxy
J. of Crystal Growth 150, 1050-1054 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl | SiGe quantum wells on (110) Si grown molecular beam epitaxy
J. Crystal Growth 150, 1050 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl | SiGe Wires and Dots Grown by Local Epitaxy
J. of Crystal Growth 150, 1060-1064 (1995)
J. Brunner, P. Schittenhelm, J. Gondermann, B. Spangenberg, B. Hadam, T. Köster, H. G. Roskos, H. Kurz, H. Gossner, I. Eisele, G. Abstreiter | Simulation of molecular beam epitaxial growth over nonplanar surfaces
Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates 298, Rottach-Egern, Germany, Feb. 20 - 24 (1995)
W. Wegscheider, L. Pfeiffer, K. West | Spin-dependent transport in SiC and III-V semiconductor devices
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS 196- 1915-1922 (1995)
N. M. Reinacher, M. S. Brandt, M. Stutzmann | Stability and band offsets of heterovalent SiC/GaN interfaces
Acta Physics Polonica A88 (1995)
M. Städele, J. A. Majewski, P. Vogl | Stationary lattice mobility of holes in gallium arsenide
J. Appl. Phys. 77, 3232-42 (1995)
R. Scholz | Stationary transport of holes in gallium arsenide
in: Quantum Transport in Ultrasmall Devices 342, Proceedings of NATO ASI, Vol. 342, ed. by D.K. Ferry, H.L. Grubin, C. Jacoboni, A.-P. Jauho (1995)
R. Scholz | Strain relaxation of Ge1-xSix buffer systems grown on Ge (001)
Appl. Phys. Lett. 67 (6), 789-791 (1995)
J. H. Li, V. Holy, G. Bauer, J. Nuetzel, G. Abstreiter | |
| Strained Si1-xGex multi-quantum well waveguide structures on (110) Si
Appl. Phys. Lett. 66 (17), 2226-2228 (1995)
K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele | STRUCTURAL AND LUMINESCENCE STUDIES OF STAIN-ETCHED AND ELECTROCHEMICALLY ETCHED GERMANIUM
THIN SOLID FILMS 255 1-2 282-285 (1995)
M. SENDOVAVASSILEVA, N. TZENOV, D. DIMOVAMALINOVSKA, M. ROSENBAUER, M. STUTZMANN, K. V. JOSEPOVITS | Superexchange in diluted magnetic semiconductors
Mat. Sci. For., Vols. 182-184, 779 (1995)
J. Blinowski, P. Kacman, J. A. Majewski | Time resolved photoluminescence of spatially direct and indirect transitions in GaAs/
Phys. Rev. B 51 (1995)
G. Abstreiter | Time-resolved photoluminescence of pseudomorphic SiGe quantum wells
Phys. Rev. B 52, 16 608-16 611 (1995)
A. Zrenner, B. Fröhlich, J. Brunner, G. Abstreiter | Tip-sample distance control for near-field scanning optical microscopes
Proc. of the SPIE `95 2535, Vol. 2535, Near-Field Optics, 69-81 (1995)
K. Karraï, R. D. Grober | Transmitted radiation through a subwavelength-sized tapered optical fiber tip
Ultramicroscopy 61, 171-177 (1995)
C. Obermüller, K. Karraï, G. Kolb, G. Abstreiter | Transport properties of a Si/SiGe quantum point-contact in the presence of impurities
Phys. Rev. B 52 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler | TRANSPORT-PROPERTIES OF SILOXENE
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 107-110 (1995)
M. ROSENBAUER, A. HOPNER, U. DETTLAFFWEGLIKOWSKA, M. STUTZMANN | TRIPLET EXCITONS IN POROUS SILICON AND SILOXENE
SOLID STATE COMMUNICATIONS 93 6 473-477 (1995)
M. S. BRANDT, M. STUTZMANN | Tunable laser diodes
Conference on Lasers and Electro-Optics (CLEO)- Pacific Rim, Makuhari, Japan (1995)
M. C. Amann | |
| Two-dimensional infrared photonic band gap structure based on porous silicon
Appl. Phys. Lett. 66 (24), 3254-3256 (1995)
U. Grüning, V. Lehmann, C. M. Engelhardt | Ultrafast relaxation of photoexcited carrier in semiconductor quantum wires: A Monte Carlo approach
Phys. Rev. B52, 5183 (1995)
L. Rota, F. Rossi, P. Lugli, E. Molinari | UNTITLED
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 148 2 U1-U1 (1995)
M. Stutzmann | Valley mixing in resonant tunneling diodes with applied hydrostatic pressure
Semicond. Sci. and Techn. 10, 1673 (1995)
A. Di Carlo, P. Lugli | Wannier-Stark localization in superlattices
Jap. J. Appl. Phys. 34, 4519 (1995)
C. Hamaguchi, M. Yamaguchi, H. Nagasawa, M. Morifuji, A. Di Carlo, P. Vogl, G. Böhm, G. Tränkle, G. Weimann, Y. Nishikawa, S. Muto | Wavelength tunable laser diodes and their applications
In: Trends in Optical Fibre Metrology and Standards, (1995) 217-240 (1995)
M. C. Amann |
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Walter Schottky Institut