2-LEVEL SYSTEMS IN HYDROGENATED AMORPHOUS-SILICON - NMR-STUDIES PHYSICAL REVIEW B 32 9 6062-6065 (1985) J. B. BOYCE, M. STUTZMANN, S. E. READY |
DONOR STATES IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM PHYSICAL REVIEW LETTERS 54 16 1836-1839 (1985) M. STUTZMANN, R. A. STREET |
DOPANT AND DEFECT STATES IN A-SI-H PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 52 3 235-245 (1985) R. A. STREET, D. K. BIEGELSEN, W. B. JACKSON, N. M. JOHNSON, M. STUTZMANN |
DOPANT STATES AND RECOMBINATION IN COMPENSATED A-SI-H JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 647-650 (1985) M. STUTZMANN, D. K. BIEGELSEN, R. A. STREET |
Formation of metal-semiconductor interfaces: From the submonolayer regime to the real Schottky barrier J. Vac. Sci. Technol. B3 (1985) F. Schäffler, G. Abstreiter |
INTERFACE EFFECTS IN AMORPHOUS-SILICON NITRIDE MULTILAYERS JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 995-998 (1985) C. C. TSAI, M. J. THOMPSON, R. A. STREET, M. STUTZMANN, F. PONCE |
Internal Photoemission in GaAs/(AlxGa1-x)As Heterostructures Physica 134B, 433- 438 (1985) G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp |
Lateral waveguiding analysis of 1.3 µm InGaAsP-InP metal-clad ridge-waveguide (MCRW) lasers Archiv für Elektronik und Übertragungstechnik, 39 (1985) 311-316 (1985) M. C. Amann |
Light scattering in semiconductor heterostructures Molecular Beam Epitaxy (MBE) and Heterostructures. Eds.: L. L. Chang and K. Ploog. Martinus Nijhoff Publishers, Dordrecht 1985. 425-459. (1985) G. Abstreiter |
Light scattering studies of semiconductor heterostructures J. Vac. Sci. Technol. B3 (1985) G. Abstreiter |
LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 363-372 (1985) M. STUTZMANN, W. B. JACKSON, C. C. TSAI |
|
LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY PHYSICAL REVIEW B 32 1 23-47 (1985) M. STUTZMANN, W. B. JACKSON, C. C. TSAI |
MOLECULAR-HYDROGEN IN AMORPHOUS SI-NMR STUDIES JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 265-268 (1985) J. B. BOYCE, M. STUTZMANN, S. E. READY |
NATIVE DEFECTS AT THE SI/SIO2 INTERFACE - AMORPHOUS-SILICON REVISITED APPLIED SURFACE SCIENCE 22-3 MAY 879-890 (1985) D. K. BIEGELSEN, N. M. JOHNSON, M. STUTZMANN, E. H. POINDEXTER, P. J. CAPLAN |
ORIENTATIONAL ORDERING AND MELTING OF MOLECULAR H-2 IN AN A-SI MATRIX - NMR-STUDIES PHYSICAL REVIEW LETTERS 54 6 562-565 (1985) J. B. BOYCE, M. STUTZMANN |
Phonon Properties of SixGe1-x Strained Overlayers on (110) GaAs Journal de Physique, MRS Europe, 209-212 (1985) H. Brugger, G. Abstreiter |
PROTON-T1 FOR SOLID H-2 IN A-SI-H JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 711-714 (1985) V. P. BORK, P. A. FEDDERS, R. E. NORBERG, J. B. BOYCE, M. STUTZMANN |
Raman Scattering by Free Carriers in Semiconductor Heterostructures Proc. of the Winter School on Heterojunctions and Semiconductor Superlattices, Les Houches, France, March 12-21, 1985. Eds.: G. Allan, G. Bastard, N. Boccara, M. Lannoo, and M. Voos. Springer-Verlag, Berlin 1986. 99-107. (1985) G. Abstreiter |
ROLE OF MECHANICAL-STRESS IN THE LIGHT-INDUCED DEGRADATION OF HYDROGENATED AMORPHOUS-SILICON APPLIED PHYSICS LETTERS 47 1 21-23 (1985) M. STUTZMANN |
SI-29 HYPERFINE MEASUREMENTS IN A-SI-H JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 703-706 (1985) D. K. BIEGELSEN, M. STUTZMANN |
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixGe1-x Superlattices Phys. Rev. Lett. 54 (1985) G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog |
THE ABSENCE OF THE STAEBLER-WRONSKI EFFECT IN FLUORINATED AMORPHOUS-SILICON SOLAR CELLS 14 2 191-192 (1985) M. JANAI, M. STUTZMANN, R. WEIL |
|
Tunable electroluminescence in GaAs-doping multilayer structures J. Vac. Sci. Technol. B3 (1985) G. Abstreiter, H. Kirchstetter, K. Ploog |