Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


WSI-related Publications for year:



2-LEVEL SYSTEMS IN HYDROGENATED AMORPHOUS-SILICON - NMR-STUDIES
PHYSICAL REVIEW B 32 9 6062-6065 (1985)
J. B. BOYCE, M. STUTZMANN, S. E. READY
DONOR STATES IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM
PHYSICAL REVIEW LETTERS 54 16 1836-1839 (1985)
M. STUTZMANN, R. A. STREET
DOPANT AND DEFECT STATES IN A-SI-H
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 52 3 235-245 (1985)
R. A. STREET, D. K. BIEGELSEN, W. B. JACKSON, N. M. JOHNSON, M. STUTZMANN
DOPANT STATES AND RECOMBINATION IN COMPENSATED A-SI-H
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 647-650 (1985)
M. STUTZMANN, D. K. BIEGELSEN, R. A. STREET
Formation of metal-semiconductor interfaces: From the submonolayer regime to the real Schottky barrier
J. Vac. Sci. Technol. B3 (1985)
F. Schäffler, G. Abstreiter
INTERFACE EFFECTS IN AMORPHOUS-SILICON NITRIDE MULTILAYERS
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 995-998 (1985)
C. C. TSAI, M. J. THOMPSON, R. A. STREET, M. STUTZMANN, F. PONCE
Internal Photoemission in GaAs/(AlxGa1-x)As Heterostructures
Physica 134B, 433- 438 (1985)
G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp
Lateral waveguiding analysis of 1.3 µm InGaAsP-InP metal-clad ridge-waveguide (MCRW) lasers
Archiv für Elektronik und Übertragungstechnik, 39 (1985) 311-316 (1985)
M. C. Amann
Light scattering in semiconductor heterostructures
Molecular Beam Epitaxy (MBE) and Heterostructures. Eds.: L. L. Chang and K. Ploog. Martinus Nijhoff Publishers, Dordrecht 1985. 425-459. (1985)
G. Abstreiter
Light scattering studies of semiconductor heterostructures
J. Vac. Sci. Technol. B3 (1985)
G. Abstreiter
LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 363-372 (1985)
M. STUTZMANN, W. B. JACKSON, C. C. TSAI
LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY
PHYSICAL REVIEW B 32 1 23-47 (1985)
M. STUTZMANN, W. B. JACKSON, C. C. TSAI
MOLECULAR-HYDROGEN IN AMORPHOUS SI-NMR STUDIES
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 265-268 (1985)
J. B. BOYCE, M. STUTZMANN, S. E. READY
NATIVE DEFECTS AT THE SI/SIO2 INTERFACE - AMORPHOUS-SILICON REVISITED
APPLIED SURFACE SCIENCE 22-3 MAY 879-890 (1985)
D. K. BIEGELSEN, N. M. JOHNSON, M. STUTZMANN, E. H. POINDEXTER, P. J. CAPLAN
ORIENTATIONAL ORDERING AND MELTING OF MOLECULAR H-2 IN AN A-SI MATRIX - NMR-STUDIES
PHYSICAL REVIEW LETTERS 54 6 562-565 (1985)
J. B. BOYCE, M. STUTZMANN
Phonon Properties of SixGe1-x Strained Overlayers on (110) GaAs
Journal de Physique, MRS Europe, 209-212 (1985)
H. Brugger, G. Abstreiter
PROTON-T1 FOR SOLID H-2 IN A-SI-H
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 711-714 (1985)
V. P. BORK, P. A. FEDDERS, R. E. NORBERG, J. B. BOYCE, M. STUTZMANN
Raman Scattering by Free Carriers in Semiconductor Heterostructures
Proc. of the Winter School on Heterojunctions and Semiconductor Superlattices, Les Houches, France, March 12-21, 1985. Eds.: G. Allan, G. Bastard, N. Boccara, M. Lannoo, and M. Voos. Springer-Verlag, Berlin 1986. 99-107. (1985)
G. Abstreiter
ROLE OF MECHANICAL-STRESS IN THE LIGHT-INDUCED DEGRADATION OF HYDROGENATED AMORPHOUS-SILICON
APPLIED PHYSICS LETTERS 47 1 21-23 (1985)
M. STUTZMANN
SI-29 HYPERFINE MEASUREMENTS IN A-SI-H
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 703-706 (1985)
D. K. BIEGELSEN, M. STUTZMANN
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixGe1-x Superlattices
Phys. Rev. Lett. 54 (1985)
G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog
THE ABSENCE OF THE STAEBLER-WRONSKI EFFECT IN FLUORINATED AMORPHOUS-SILICON
SOLAR CELLS 14 2 191-192 (1985)
M. JANAI, M. STUTZMANN, R. WEIL
Tunable electroluminescence in GaAs-doping multilayer structures
J. Vac. Sci. Technol. B3 (1985)
G. Abstreiter, H. Kirchstetter, K. Ploog





Walter Schottky Institut About the Institute Research

Technische Universität München Annual Reports Photonics & Optoelectronics
Am Coulombwall 4 Events and News Quantum Technologies
D-85748 Garching History of WSI Energy Materials
Germany How to get to WSI Engineered Nanomaterials
Scientific Background Functional Interfaces
Tel: +49-(0)89-289-12761 Seminars Nanofabrication
Fax: +49-(0)89-289-12737 The WSI in Numbers

Partners Publications
(c) 2018 Walter Schottky Institut WSI Association

Intranet





Walter Schottky Institut Navigation

Technische Universität München Contact
Am Coulombwall 4 Groups
D-85748 Garching Institute
Germany Partners
Publications
Tel: +49-(0)89-289-12761 Research
Fax: +49-(0)89-289-12737 Groups
Intranet
(c) 2018 Walter Schottky Institut