Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


WSI-related Publications for year:



A novel electroneutral anion host based on organoboron betaines
Journal Fur Praktische Chemie-Chemiker-Zeitung 341, 291-296 (1999)
A. Cattani-Scholz, F. P. Schmidtchen
A nonlinear transport device with no intrinsic threshold
Microstructures 25, 269 (1999)
A. M. Song, S. Manus, M. Streibl, A. Lorke, J. P. Kotthaus, W. Wegscheider, M. Bichler
A semiconductor-based photonic memory cell
Science 283, 1292-1295 (1999)
S. Zimmermann, A. Wixforth, 1. J. P. Kotthaus, 1. W. Wegscheider, 2. M. Bichler2
Analysis of composition fluctuations in AlxGa1-xN
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 59 1-3 182-185 (1999)
B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzman, M. Albrecht, H. P. Strunk
Anomalous Kondo Effect in a Quantum Dot at Nonzero Bias
Phys. Rev. Lett. 83, 804 (1999)
F. Simmel, R. H. Blick, J. P. Kotthaus, W. Wegscheider, M. Bichler
Atomistic modeling of large-scale metal film growth fronts
Phys. Rev. B 59, R7856 (1999)
U. Hansen, P. Vogl, V. Fiorentini
Ballistic magnetotransport in a semiconductor microjunction with broken symmetry
Superlattices and Microstructures 25, 149 (1999)
A. M. Song, A. Lorke, J. P. Kotthaus, W. Wegscheider, M. Bichler
Capacitively detected magnetic resonance of defects in MOSFETs
PHYSICA B 274 1027-1030 (1999)
M. S. Brandt, R. Neuberger, M. Stutzmann
Capacitively-detected magnetic resonance in hydrogenated amorphous silicon solar cells
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10B L1172-L1174 (1999)
M. S. Brandt, R. T. Neuberger, M. W. Bayerl, M. Stutzmann
Carrier recombination at screw dislocations in n-type AlGaN layers
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 409-414 (1999)
M. Albrecht, A. Cremades, J. Krinke, S. Christiansen, O. Ambacher, J. Piqueras, H. P. Strunk, M. Stutzmann
Characteristics of surface and waveguide emitting SiGe:Er:O diodes
Journal of Luminescence 80, 321-327 (1999)
A. Sticht, E. Neufeld, A. Luigart, K. Brunner, G. Abstreiter, H. Bay
Characterization of AlGaN-Schottky diodes grown by plasma induced molecular beam epitaxy
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 1 163-167 (1999)
U. Karrer, A. Dobner, O. Ambacher, M. Stutzmann
Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 S279-S282 (1999)
J. W. Kim, C. S. Son, I. H. Choi, Y. K. Park, Y. T. Kim, O. Ambacher, M. Stutzmann
Commensurate composite fermions in weak periodic electrosatic potentials: direct evidence of a periodic effective magnetic field
Phys. Rev. Lett. 83, 2620-2623 (1999)
J. H. Smet, S. Jobst, K. V. Klitzing, D. Weiss, W. Wegscheider, V. Umansky
Comparison of different substrates for a fully depleted soi-cmos-technology
Electron Technology, 151-153 (1999)
T. Huttner, H. Wurzer, R. Mahnkopf, S. Pindl, G. Abstreiter
Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 38 9A 4962-4968 (1999)
R. Dimitrov, A. Mitchell, L. Wittmer, O. Ambacher, M. Stutzmann, J. Hilsenbeck, W. Rieger
Composition analysis using elastic recoil detection
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 679-682 (1999)
L. Gorgens, G. Dollinger, A. Bergmaier, O. Ambacher, L. Eastman, J. A. Smart, J. F. Shealy, R. Dimitrov, M. Stutzmann, A. Mitchell
Compositional fluctuations in GaInN GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy
APPLIED PHYSICS LETTERS 74 26 3981-3983 (1999)
N. Wieser, O. Ambacher, H. P. Felsl, L. Gorgens, M. Stutzmann
Correlated SiGe wires shaped by regular step bunches on miscut Si (113) substrates
Phys. Rev. B 60, 10935 (1999)
J. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst, M. Rühle
Correlation of photoconductivity and structure of microcrystalline silicon thin films with submicron resolution
APPLIED PHYSICS LETTERS 75 12 1742-1744 (1999)
B. Rezek, C. E. Nebel, M. Stutzmann
Coulomb blockade effects in a highly doped silicon quantum wire fabricated on novel molecular beam epitaxy grown material
Jpn. J. Appl. Phys. 38, 465-468 (1999)
T. Koestera, F. Goldschmidtboeinga, B. Hadama, J. Steina, S. Altmeyera, B. Spangenberga, H. Kurza, R. Neumannb, K. Brunnerb, G. Abstreiterb
CV and DLTS experiments in boron-doped diamond
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 174 1 117-127 (1999)
C. E. Nebel, R. Zeisel, M. Stutzmann
Design and realization of a buried-heterostructure tunable-twin-guide laser diode with electrical blocking regions
IEEE Journal of Quantum Electronics 35, 794-802 (1999)
B. Schmidt, S. Illek, R. Gessner, M. C. Amann
Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range
PHYSICAL REVIEW B 59 3 1845-1849 (1999)
T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, W. Richter, O. Ambacher, M. Stutzmann, M. Cardona
Direct observation of hole edge channels in a two dimensional electron gas
Phys. Rev. Lett. 83, 3033-3036 (1999)
A. Paassen, A. Zrenner, A. L. Efros, M. Stopa, J. Frankenberger, M. Bichler, W. Wegscheider
Direct observation of the intersubband Bernstein modes: Many-body coupling with spin- and charge-density excitations
Phys. Rev. B 59, R12751 (1999)
V. E. Kirpichev, L. V. Kulik, I. V. Kukushkin, K. V. Klitzing, K. Eberl, W. Wegscheider
Direct sub-µm lateral patterning of SOI by focused laser beam induced oxidation
Microelectronic Engineering 48, 367-370 (1999)
R. A. Deutschmann, M. Huber, R. Neumann, K. Brunner, G. Abstreiter
Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 807-811 (1999)
N. Wieser, O. Ambacher, H. Angerer, R. Dimitrov, M. Stutzmann, B. Stritzker, J. K. N. Lindner
Dynamics of electronic ``bubble'' formation in solid hydrogen
J. Lumin. 83-84, 135-8 (1999)
F. Vigliotti, C. Jeannin, M. T. Portella-Oberli, M. Chergui, R. Scholz
Dynamics of electronic ``bubble'' formation in solid hydrogen: A classical model based on fluid dynamics
Phys. Rev. Lett. 83, 2355-8 (1999)
F. Vigliotti, E. Sarraf, M. Chergui, R. Scholz
Editorial
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 2 U3-U3 (1999)
M. Stutzmann
Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures
Phys. Rev. B 59, 13242-13250 (1999)
C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. Schäffler
Enhancement of erbium photoluminescence by substitutional C alloying of Si
Appl. Phys. Lett. 75, 2584-2586 (1999)
M. Markmann, E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter
Exact exchange Kohn-Sham formalism applied to semiconductors
Phys. Rev. B 59, 10031 (1999)
M. Städele, M. Moukara, J. A. Majewski, P. Vogl, A. Görling
Excitonic transitions in cubic AlGaN
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS 164 419-424 (1999)
G. Salviati, C. Zanotti-Fregonara, M. Albrecht, N. Armani, S. Christiansen, H. P. Strunk, H. Angerer, O. Ambacher, M. Stutzmann
Experimental and theoretical studies of near-breakdown phenomena in heterostructure FET
in: Proceedings GaAs-99, München (1999)
A. Sleimann, L. Rossi, A. D. Carlo, L. Tocca, A. Bonfiglio, M. Brunori, P. Lugli, G. Zandler, G. Meneghesso, E. Zanoni, C. Canali, A. Cetronio, M. Lanzieri, M. Peroni
Explaining the dependencies of the hole and electron mobilities in Si MOSFET's inversion layers
IEDM Tech. Dig. 1999, 527 (1999)
A. Pirovano, A. L. Lacaita, G. Zandler, R. Oberhuber
Fabricating tunable semiconductor devices with an atomic force microscope
Appl. Phys. Lett 75, 1134 (1999)
R. Held, S. Lüscher, T. Heinzl, K. Ensslin, W. Wegscheider
First-order phase transitions in a quantum Hall ferromagnet
Nature 402, 638 (1999)
V. Piazza, V. Pellegrini, F. Beltram, W. Wegscheider, T. Jungwirth, A. H. MacDonald
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
Appl. Phys. Lett. 74, 2002-4 (1999)
F. D. Sala, A. D. Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, J. M. Jancu
From CaSi2 to siloxene: epitaxial silicide and sheet polymer films on silicon
JOURNAL OF CRYSTAL GROWTH 203 4 570-581 (1999)
G. Vogg, M. S. Brandt, M. Stutzmann, M. Albrecht
High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
APPLIED PHYSICS LETTERS 75 23 3653-3655 (1999)
M. J. Murphy, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, J. Silcox, R. Dimitrov, M. Stutzmann
High-resolution x-ray diffraction on self-organized step bunches of Si1-xGex grown on (113)-oriented Si
J. Phys. D: Appl. Phys. 32, A71-A74 (1999)
J. Stangl, V. Holy, A. A. Darhuber, P. Mikulik, G. Bauer, J. Zhu, K. Brunner, G. Abstreiter
Impact of piezo- and pyroelectric fields onto transport properties and device performance in III-nitride heterostructure devices
in: Proc. of the 24th Int. Conf. on the Physics of Semiconductors, 1998, Jerusalem, Israel, Ed. D. Gershoni, World Scientific (1999)
G. Zandler, R. Oberhuber, F. Compagnone, P. Vogl
Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
Appl. Phys. Lett. 75, 3968-3970 (1999)
M. Arzberger, U. Käsberger, G. Böhm, G. Abstreiter
Influence of growth conditions on the photoluminescence of self-assambled InAs/GaAs quantum dots
J. of Appl. Phys. 85, 2355-2362 (1999)
L. Chu, M. Arzberger, G. Böhm, G. Abstreiter
Influence of the Chemical Structure on the Luminescence Properties of Organic Dye Molecules
Mat. Res. Soc. Proc. (1999)
E. Zojer, U. Rant, G. Leising, N. Schulte, A. Schlüter, P. Buchacher, R. Müllner, F. Stelzer, F. Wudl, J. Bredas
In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography
Appl. Phys. Lett. 75, 2452-2454 (1999)
S. Lüscher, A. Fuhrer, R. Held, T. Heinzel, K. Ensslin, W. Wegscheider
Interaction of scarred wavefunctions and spontaneous spin polarization in quantum dot
Microelectronic Engineering 47, 119 (1999)
M. Stopa
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 3A L217-L219 (1999)
M. K. Kelly, R. P. Vaudo, V. M. Phanse, L. Gorgens, O. Ambacher, M. Stutzmann
Lateral ordering of coherent Ge islands on Si(001) studied by triple-crystal grazing incidence diffraction
Appl. Phys. Lett. 74, 2978-2980 (1999)
I. Kegel, T. H. Metzger, J. Peisl, P. Schittenhelm, G. Abstreiter
Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron system
JETP Letters 69, 603-609 (1999)
A. Shashkin, V. T. Dolgopolov, E. V. Deviatov, B. Irmer, A. G. C. Haubrich, J. P. Kotthaus, M. Bichler, W. Wegscheider
Magnetization of the fractional quantum hall states
Phys. Rev. Lett. 82, 819-822 (1999)
I. Meinel, T. Hengstmann, D. Grundler, D. Heitmann, W. Wegscheider, M. Bichler
Magneto-optical studies of GaAs/A1GaAs T-shaped quantum wire structures fabricated by cleaved edge overgrowth
Journal of Crystal Growth 201/202, 805- 09 (1999)
L. Sorba*, 1. L. Sorba*, G. Schedelbeck, G. B. M. Bichler
Magnetotransport properties of arrays of cross-shaped antidots
Phys. Rev. B 60, 8845 (1999)
S. D. Haan, A. Lorke, R. Hennig, M. Suhrke, W. Wegscheider, M. Bichler
Mechanical nanomanipulation of single strain-induced semiconductor quantum dots
Appl. Phys. Lett. 75, 358-360 (1999)
C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto
Microwave Spectroscopy of a Single Quantum Dot in the few Electron Limit
Electrochemical Soc. Proceedings Vol. 99-22 99-22, p. 406-12 (1999)
H. Qin, F. Simmel, A. Holleitner, R. H. Blick, J. P. Kotthaus, W. Wegscheider, M. Bichler
MOCVD-epitaxy on free-standing HVPE-GaN substrates
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 1 443-446 (1999)
C. R. Miskys, M. K. Kelly, O. Ambacher, M. Stutzmann
Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMT´s
Physica B 272, 558-661 (1999)
G. Zandler, L. Rossi, A. D. Carlo, L. Tocca, A. Bonfiglio, M. Brunori, P. Lugli, G. Meneghesso, R. Zanoni
New type of electron nuclear-spin interaction from resistively detected NMR in the fractional quantum hall effect regime
Phys. Rev. Lett. 82, 4070-4073 (1999)
S. Kronmüller, W. Dietsche, K. V. Klitzing, G. Denninger, W. Wegscheider, M. Bichler
Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 4 art. no.-G8.4 (1999)
M. J. Murphy, B. E. Foutz, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger
Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy
Eastman, T. J. Eustis, R. Dimitrov, M. Stutzmann, and W. Rieger MRS Internet. J. Nitride Semicond. Res. 4S1, G8.4 (1999)
M. J. Murphy, B. E. Foutz, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F.
Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
Appl. Phys. Lett. 75, 3599-3601 (1999)
L. Chu, A. Zrenner, G. Böhm, G. Abstreiter
ODMR of bound excitons in Mg-doped GaN
PHYSICA B 274 120-123 (1999)
M. W. Bayerl, M. S. Brandt, T. Suski, I. Grzegory, S. Porowski, M. Stutzmann
Optical and electrical properties of doped amorphous silicon suboxides
PHYSICAL REVIEW B 60 19 13561-13572 (1999)
R. Janssen, A. Janotta, D. Dimova-Malinovska, M. Stutzmann
Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes
PHYSICA B 274 811-814 (1999)
E. R. Glaser, T. A. Kennedy, B. R. Bennett, B. V. Shanabrook, L. A. Hemstreet, M. W. Bayerl, M. S. Brandt
Optical and transport properties of low-dimensional structures fabricated by cleaved edge overgrowth
Microelectronic Engineering 47, 215-219 (1999)
W. Wegscheider, M. Rother, G. Schedelbeck, M. Bichler, G. Abstreiter
Optical properties of low-dimensional structures fabricated by cleaved edge overgrowth
(1999)
W. Wegscheider, G. Schedelbeck, M. Bichler, G. Abstreiter
Optically induced persistent charge storage effects in self assembled InAs quantum dots
Jpn. J. Appl. Phys. 38, 531-534 (1999)
J. J. Finley, M. Skalitz, M. Arzberger, A. Zrenner, G. Böhm, G. Abstreiter
Optimization of erbium-doped light-emitting diodes by p-type counterdoping
Appl. Phys. Lett. 75, 647-649 (1999)
E. Neufeld, M. Markmann, K. Brunner, G. Abstreiter
Passivation of boron in diamond by deuterium
APPLIED PHYSICS LETTERS 74 13 1875-1876 (1999)
R. Zeisel, C. E. Nebel, M. Stutzmann
Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Appl. Phys. Lett. 74, 3200-3202 (1999)
C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto
Photocapacitance study of boron-doped chemical-vapor-deposited diamond
PHYSICAL REVIEW B 60 4 2476-2479 (1999)
R. Zeisel, C. E. Nebel, M. Stutzmann, E. Gheeraert, A. Deneuville
Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots
Appl. Phys. Lett. 75, 2247-2249 (1999)
L. Chu, M. Arzberger, A. Zrenner, G. Böhm, G. Abstreiter
Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10A L1083-L1084 (1999)
B. Rezek, C. E. Nebel, M. Stutzmann
Porphyrin-polyazacryptand conjugates: Novel receptors for nucleotides
Tetrahedron 55, 7829-7834 (1999)
V. Kral, A. Cattani-Scholz, A. Sinica, F. P. Schmidtchen
Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon
MONATSHEFTE FUR CHEMIE 130 1 79-87 (1999)
G. Vogg, N. Zamanzadeh-Hanebuth, M. S. Brandt, M. Stutzmann, M. Albrecht
Pyroelectronics: Novel device concepts based on nitride interfaces
J. Vac. Sci. Technol. B 17, 1617-1621 (1999)
G. Zandler, J. A. Majewski, P. Vogl
Quasiharmonic versus exact surface free energies of al: A systematic study employing a classical interatomic potential
Phys. Rev. B 60, 5055 (1999)
U. Hansen, P. Vogl, V. Fiorentini
Reaction rates for ionized physical vapor deposition modeling from molecular-dynamics calculations: Effect of surface roughness
Phys. Rev. B 60, 14417 (1999)
U. Hansen, A. Kersch
Reflectance difference spectroscopy characterization of AlxGa1-xN-compound layers
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 215-220 (1999)
U. Rossow, D. E. Aspnes, O. Ambacher, V. Cimalla, N. V. Edwards, M. Bremser, R. F. Davis, J. A. Schaefer, M. Stutzmann
Regular step bunching and ordering of Ge Islands on vicinal Si surfaces
Proc. of ICPS 24, Ed. D. Gershoni World Scientific, p. 61 ff (1999)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst
Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 381-389 (1999)
O. Ambacher, R. Dimitrov, M. Stutzmann, B. E. Foutz, M. J. Murphy, J. A. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Chumbes, B. Green, A. J. Sierakowski, W. J. Schaff, L. F. Eastman
Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice
Appl. Phys.74 (15), 2179-2181 (1999)
E. Schomburg, A. M. Heini, J. M. Chamberlain, D. P. Steenson, S. Brandl, K. Hofbeck, K. F. Renk, W. Wegscheider
Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE
Phys. Rev. B, 60 (1999)
K. Schmalz, I. N. Yassievich, P. Schittenhelm, G. Abstreiter
Spatially resolved spectroscopy of single and coupled quantum dots
Jpn. J. Appl. Phys. 38, 449-454 (1999)
G. Abstreiter, M. Bichler, M. Markmann, G. Schedelbeck, W. Wegscheider, A. Zrenner
Spatially resolved spectroscopy on single self-assembled quantum dots
Journal of Electronic Materials 28, 542 (1999)
A. Zrenner, M. Markmann, E. Beham, F. Findeis, G. Böhm, G. Abstreiter
Step characterization on vicinal Si surfaces by reflection high-energy electron diffraction at arbitrary azimuths
Applied Surface Science 137, 191-196 (1999)
J. Zhu, K. Brunner, G. Abstreiter
Strain relaxation of facetted Ge islands on Si (113)
Appl. Phys. Lett. 75, 2395-2397 (1999)
J. Zhu, C. Miesner, K. Brunner, G. Abstreiter
The origin of red luminescence from Mg-doped GaN
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 547-550 (1999)
M. W. Bayerl, M. S. Brandt, E. R. Glaser, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. Stutzmann
Theoretical insights into CoSi2/CaF2 tunnelig diodes
Physica B 272 (1999)
C. Strahberger, P. Vogl
Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP
Superlattices and Microstructures 25, 351-5 (1999)
J. M. Jancu, F. Beltram, R. Scholz, A. D. Carlo
Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition
JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 1 42-45 (1999)
J. W. Kim, Y. K. Park, Y. T. Kim, C. S. Son, I. H. Choi, O. Ambacher, M. Stutzmann
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
JOURNAL OF APPLIED PHYSICS 85 6 3222-3233 (1999)
O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, J. Hilsenbeck
Ultrafast coherent vibronic dynamics of F and F_H(OH-) centers in KBr
in: Proceedings of XIV International Symposium on Electron-Phonon Dynamics and Jahn-Teller Effect, Erice, 7-13 July 1998 (1999)
R. Scholz, V. Dierolf, F. Bassani
Untitled
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 171 2 U3-U3 (1999)
M. Stutzmann
Vibrational anti-crossing in siloxene
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 215 1 409-412 (1999)
M. S. Brandt, L. Hoppel, N. Zamanzadeh-Hanebuth, G. Vogg, M. Stutzmann





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