Semiconductor Quantum Nanomaterials - Research
Group leader: PD Dr. Gregor Koblmueller (Chair of Prof. Dr. Jonathan Finley)
Our research activities on semiconductor quantum nanomaterials aim at four different domains. These encompass "Advanced Synthesis" using ultrahigh-purity molecular beam epitaxy methods, "Functional Imaging" to interrogate key structure-property-function relationships, "Integrated Photonics" describing the development of novel on-chip integrated nanolasers and quantum light sources, and "Quantum Electronics" addressing new concepts in nanowire-based quantum transport, in topological semi-/ superconductors, and nano-thermoelectrics research.
A major workhorse for our research on advanced nano-systems/devices are innovative semiconductor nano- & quantum-heterostructures created by design using accurately controlled synthesis methods. Specifically we employ ultrahigh-purity molecular beam epitaxy (MBE) dedicated to III-V compound semiconductors (arsenides / antimonides), group-III nitrides as well as new classes of emerging 2D materials. The latter are synthesized in a new MBE-cluster system in collaboration with the MWM sub-group. Currently, a substantial effort in synthesis is on III-V nanowires (NW), which offer unique capabilities in heterostructure and crystal phase engineering, as well as site-selective growth and deterministic incorporation of atomically engineered low-dimensional quantum systems. The following selection of key publications gives a brief view into ongoing activities in growth/synthesis research of 1D-NWs and their quantum heterostructures.
A. Ajay, M. Bissolo, F. Del Giudice, H. Esmaielpour, H. Riedl, D. Ruhstorfer, P. Schmiedeke, T. Schreitmüller, R. Wang, H. Yu
F. Del Giudice, et al., “Epitaxial type-I and type-II InAs-AlAsSb core-shell nanowires on silicon”, Appl. Phys. Lett. 119, 193102 (2021).
D. Ruhstorfer, et al., “Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy", Nanotechnology 32, 135604 (2021).
Sun, et al., “Dislocation-induced thermal transport anisotropy in
single-crystal group-III nitride films”, Nature Materials 18, 136