Walter Schottky Institute
Center for Nanotechnology and Nanomaterials

Semiconductor Quantum Nanomaterials - News
Group leader: PD Dr. Gregor Koblmueller (Chair of Prof. Dr. Jonathan Finley)


(2021 - 2022)

Pioneering nanowire-based quantum emitters for efficient quantum photonic integrated circuits
Dec 18 2021


Quantum photonic integrated circuits (QPIC) have emerged as a powerful platform to incorporate quantum optical elements on a single chip for driving quantum technological applications in secure data communication and distributed quantum computing. Practical QPICs pose, however, many challenges, most critically the need for arrays of deterministic, heterogeneously integrated, efficient photon sources, such as quantum dots (QD) that can generate single or entangled photon pairs on demand.

In a recent report just published in Optics Express (2021), we proposed a new design concept of a monolithically integrated, vertical-cavity nanowire-based quantum emitter (QD) that offers highly efficient coupling to Si-based QPICs. Using finite-difference time domain (FDTD) simulations, lead author Nitin Mukhundhan designed a broadband QD emitter with a central wavelength of 1.3 µm that is embedded in a vertical-cavity GaAs NW directly on a Si-ridge waveguide (WG). Hereby, key geometrical parameters of the NW and Si-WG dimensions were tuned to explore the coupling mechanisms to the NW and Si-WG modes. Interestingly, Fabry-Perot resonances were observed in the Purcell enhancement of the QD emission in the finite NW cavity that govern the outcoupled power into the Si-WG modes. With an optimized geometry that places the QD emitter in a finite NW in close proximity to the Si-WG, we were able to achieve peak out-coupling efficiencies as high as 80%.

The interesting new results will soon be also presented at the SPIE-Photonics West 2022 Conference in San Francisco by our lead author Nitin Mukhundan.

e-conversion funds new tandem project on atomically-thin 2D-nitride materials
Dec 1 2021


Group-III nitride materials are well known for their important roles in energy-efficient solid-state lighting, high-power electronics and light-harvesting applications, because of their various unique properties. What makes these classes of materials now even more fascinating is that recent predictions propose new and enhanced properties in the limit of only few atomic layers, where strong quantum confinement and excitonic effects come into play. Giant absorption properties along with huge tunability of exciton binding energies and carrier lifetimes are to be expected, but experimental demonstrations are largely missing.

In a recent open call for new tandem-projects, the Cluster of Excellence e-conversion granted our successful project application on the proposed topic of "Exploring atomically thin 2D-nitride materials for solid-state lighting and light harvesting applications". The project runs over the next three years (2022-2025) and involves both experimental groups (G. Koblmüller / E. Zallo at WSI) and a computational materials group (H. Ebert, LMU Chemistry). Hereby, our goals are to use first-principles calculations to guide the development of ultra-confined 2D-nitride materials at the single-monolayer or few-layer level. Using our newly established MBE-Analytics Cluster we will synthesize the materials in the purest possible environment, and further establish insights into structure-property relationships correlating electronic properties with photo-physical effects and carrier dynamics. The project will be a rewarding experience for a new Ph.D. student to be funded by e-conversion. Applications for hiring are now open!

Dr. Hamidreza Esmaielpour joins as new research associate via Marie-Curie fellowship program
Nov 12 2021


We warmly welcome Dr. Hamidreza Esmaielpour as a newly appointed Postdoctoral Research Associate to the Semiconductor Quantum Nanomaterials Group. Hamidreza was recently awarded the prestigious Marie Sklodowska Curie Action (MSCA) Fellowship via the EuroTechPostdoc2-Programme, which allows him to pursue research at TUM in conjunction with the Ècole Polytechnique de Paris (L'X) acting as Co-Host University.

Hamidreza brings large expertise in the field of hot-carrier solar cells (HCSC), their device fabrication and advanced optical spectroscopy and modelling. In his project, he will combine his research strengths with our group's focus on nanowire systems to realize new forms of high-efficiency, low-dimensional HCSCs over the coming years.

Hamidreza has recently completed his PhD studies in Solid State Physics at the University of Oklahoma, USA with academic distinction, as recognized by the Nielsen Prize Award. Before joining our group at TUM, he held an appointment as Postdoctoral Fellow at the CNRS, Institut Photovoltaique d'Ille-de-France (IPVF) in Palaiseau, France.

Novel InAs-AlAsSb core-shell nanowire system demonstrated
Nov 8 2021


Low-bandgap InAs nanowires (NW) have drawn large attention in recent years due to potential applications in electronics, photonics and mid-infrared (MIR) optoelectronics. For these, functional core-multishell heterostructures are much desired, but such device structures suffered so far from the lack of proper lattice-matched shell systems.

Now, in a report just published in Applied Physics Letters (2021), Fabio del Giudice and co-workers pioneered a novel InAs-AlAsSb core-shell system to solve previous limitations. As a member of the 6.1A-family of materials, the InAs-AlAsSb system exploits not only close lattice-matching conditions, but also exceptional conduction band offsets, electron confinement, and tunability of band line-up, with no analogue amongst all III-V semiconductors. In our work, we also developed direct monolithic integration of composition-tunable InAs-AlAsSb NW arrays on silicon, and explored the effects of shell composition on the morphological, strain and MIR emission properties via correlated Raman and PL spectroscopy. Based on strain and electronic structure simulations, we further emphasized the unique tunability between type-I and type-II band line-up at the core-shell interface. These findings will enable large versatility of emerging nanoscale Si-photonic and optoelectronic devices.

Get-together after major lab reconstructions
Oct 27 2021


The year 2021 has been coined by substantial laboratory reconstructions and overhauling / maintenance activities. Not only did we undergo a major MBE opening campaign to introduce new materials and system components, after 1154 consecutive sample growths over the last 6 years. Also, both our heavily used low-noise electrical and magneto-transport setup and the mid-IR confocal PL laboratory had to move to new locations. Thanks to the tireless and patient efforts made by all team members, we finally came back in operation in the last few weeks.

To celebrate the completed lab reconstructions, the SQNM group held a joyful get-together with drinks and food under Munich's late October sunshine. We took the opportunity to take a new group photo that was long overdue, and toasted on new research endeavors to come.

Editor's Pick: Low-threshold nanowire lasers emitting at 1.3 µm at room temperature
Jun 2 2021


III-V based semiconductor nanowire (NW) lasers hold large potential for telecom-band optical data communication and sensing applications due to their ultracompact size, unique properties, and integrability on silicon (Si) photonic circuits. Realizing telecom-band lasing in GaAs based NW lasers with low bandgap gain media has been, however, notoriously difficult because of high compressive strain built up in the active regions.

In a recent report published in Applied Physics Letters (2021), P. Schmiedeke, et al. proposed and demonstrated an advanced coaxial GaAs-InGaAs multi-quantum well (MQW) NW laser that solves previous limitations. By implementing a crucial strain-compensating InAlGaAs buffer layer to suppress the compressive strain in the MQW, much larger In molar fractions without plastic relaxation are obtained. Thereby, NW-lasers with In-content up to 40% in the MQW were achieved with tuneability of the lasing emission to below the Si transparency region while maintaining exceptional material quality. This way we achieved optically pumped room-temperature lasing operation with a threshold < 50 µJcm-2 in the telecom O-band close to 1.3 µm.

The editors of Appl. Phys. Lett. were favorably impressed by our work, and highlighted this breakthrough result as Editor's Pick in the June-2021 (Vol.118(22)) issue.

Online Link

SIOE Merit Award for Andreas Thurn
Apr 6 2021


Andreas Thurn, PhD candidate at the Chair of Semiconductor Nanostructures and Quantum Systems, was recently awarded the SIOE Merit Award at the Semiconductor and Integrated Opto-Electronics Conference (SIOE-2021) in Cardiff, United Kingdom. The award acknowledges outstanding student contributions in the fields of nanophotonics and integrated opto-electronics based on advanced semiconductor materials.

The awardee received the prize for his oral presentation entitled “Ultrafast non-equilibrium dynamics in GaAs-based nanowire lasers”, which is grounded on collaborative work between experimental groups at the WSI-TUM and theory groups at TU Berlin, Cardiff University and Sandia National Laboratories. In this work, Andreas combined non-resonant degenerate pump-probe spectroscopy on single GaAs-AlGaAs core-shell nanowire (NW) lasers, together with numerical simulations using k-resolved Bloch equation and quantum statistical models, to unveil new and unexpected NW laser dynamics. In particular, he could observe ultrafast lasing dynamics similar to relaxation oscillations, but which are governed by cyclic heating/cooling processes of the electron-hole plasma in the NW lasers. This work sets important foundations to engineer the ultrafast temporal emission dynamics in advanced nanolasers on silicon.     

New DFG project on advanced nanowire thermoelectrics
Jan 13 2021


We are excited to start off the new year with a new DFG-project on nanowire thermoelectrics that was granted today by the German Research Foundation (DFG). The single-PI project run by PD G. Koblmüller (WSI-SQNM Group) is entitled "Advanced thermoelectric properties in 1D quantum-confined core-shell nanowire heterostructures" (KO-4005/10-1). It aims to establish core-shell semiconductor nanowire (NW) heterostructures as an experimental platform for advanced nano-thermoelectric materials that exploit several advantages of quantum confinement mediated carrier transport and phonon properties tailored by the core-shell structure. Particular attention will be paid to new forms of InAs-based core-shell NWs with strong 1D-confinement and long quasi-ballistic mean free paths of carriers, as well as large atomic mass contrast to limit thermal conductivity. Hereby, we aim to push the thermoelectric performance of these new types of NW heterostructures to the quantum limit, i.e., the theoretical power factor quantum bound, while independently tuning phonon scattering via size effects in the core-shell structure. With future nano-thermoelectrics requiring both n- and p-channels, we further develop ambipolar systems that take advantage of quantized electron and hole transport in a single thermoelectric device.

Comprehensive insights into growth dynamics of ternary InAsSb nanowire arrays revealed
Jan 8 2021


InAsSb-based nanowires (NW) are amongst the most interesting semiconductor materials, due to their exceptionally large spin-orbit coupling and lowest band gap of all III-V semiconductors. This makes these 1D nanostructures very promising candidates, for example, in hybrid semiconductor-superconductor devices for topological quantum information applications as well as for mid-infrared (MIR) and long-wavelength infrared (LWIR) optoelectronic devices. Synthesis of this class of NWs has started only recently, where many fundamental aspects in the growth kinetics and structure-property relationships are still unknown.

We have now provided a very comprehensive study of the growth dynamics and correlated structural/compositional properties of periodic catalyst-free InAsSb NW arrays, published in Nanotechnology (2021) by D. Ruhstorfer, et al.. Specifically, we explored the interrelated growth kinetics and Sb incorporation dynamics for a wide set of array geometry parameters and growth conditions, with the goal to realize high aspect-ratio InAsSb NWs and enhanced Sb incorporation. Using correlated HR-XRD, HR- and scanning TEM, we further mapped their compositional structure and found an interesting core-shell sub-structure with Sb deficient interlayers. These findings, which can be applied to diverse ternary III-V based NWs, were supported by models for the evolution of the sub-structure and explained by the formation of a nanoscale facet at the truncation of the (111)B growth front and {1-10} sidewall surfaces.

Online Link

Walter Schottky Institut About the Institute Research

Technische Universität München Annual Reports Photonics & Optoelectronics
Am Coulombwall 4 Events and News Quantum Technologies
D-85748 Garching History of WSI Energy Materials
Germany How to get to WSI Engineered Nanomaterials
Scientific Background Functional Interfaces
Tel: +49-(0)89-289-12761 Seminars Nanofabrication
Fax: +49-(0)89-289-12737 The WSI in Numbers

Partners Publications
(c) 2018 Walter Schottky Institut WSI Association


Walter Schottky Institut Navigation

Technische Universität München Contact
Am Coulombwall 4 Groups
D-85748 Garching Institute
Germany Partners
Tel: +49-(0)89-289-12761 Research
Fax: +49-(0)89-289-12737 Groups
(c) 2018 Walter Schottky Institut