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Amorphous nitride semiconductors with highly tunable optical and electronic properties: The benefits of disorder in Ca-Zn-N thin films
Materials Horizons 12, 1971 (2025)
E.I. Sirotti, S. Böhm, G. Grötzner, M. Christis, L.I. Wagner, L. Wolz, F. Munnik, J. Eichhorn, M. Stutzmann, V. Streibel, I.D. Sharp
Online Ref | Annealing-Free Ohmic Contacts to n-Type GaN via Hydrogen Plasma-Assisted Atomic Layer Deposition of Sub-Nanometer AlOx
Advanced Materials Interfaces 11, 2300758 (2024)
M. Christis, A. Henning, J.D. Bartl, A. Zeidler, B. Rieger, M. Stutzmann, I.D. Sharp
Online Ref | Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina
Advanced Materials Interfaces 10, 2202166 (2023)
A. Henning, J.D. Bartl, L. Wolz, M. Christis, F. Rauh, M. Bissolo, T. Grünleitner, J. Eichhorn, P. Zeller, M. Amati, L. Gregoratti, J.J. Finley, B. Rieger, M. Stutzmann, I.D. Sharp
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Walter Schottky Institut