Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources arXiv 2505.22886 (2025) B. Costa, B. Scaparra, X. Wei, H. Riedl, G. Koblmueller, E. Zallo, J. J. Finley, L. Hanschke, K. Mueller Online Ref
Van der Waals Epitaxy of 2D Gallium Telluride on Graphene: Growth Dynamics and Principal Component Analysis Small 21, 2503993 (2025) M. Bissolo, M. Hanke, R. Calarco, J. J. Finley, G. Koblmueller, J. M. J. Lopes, E. Zallo Online Ref
Broad range tuning of InAs quantum dot emission for nanophotonic devices in the telecommunication bands ACS Applied Nano Materials 7, 26854 (2024) B. Scaparra, E. Sirotti, A. Ajay, B. Jonas, B. Costa, H. Riedl. P. Advienko, I. D. Sharp, G. Koblmueller, E. Zallo, J. J. Finley, K. Mueller Online Ref
Structural properties of graded InxGa1-xAs metamorphic buffer layers for quantum dots emitting in the telecom bands Materials for Quantum Technology 3, 035004 (2023) B. Scaparra, A. Ajay, P.S. Avdienko, Y. Xue, H. Riedl, P. Kohl, B. Jonas, B. Costa, E. Sirotti, P. Schmiedeke, V. Villafañe, I.D. Sharp, E. Zallo, G. Koblmueller, J.J. Finley, K. Mueller Online Ref
Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase npj 2d materials and applications 7, 19 (2023) E. Zallo, A. Pianetti, A. S. Prikhodko, S. Cecchi, Y. S. Zaytseva, A. Giuliani, M. Kremser, N. I. Borgardt, J. J. Finley, F. Arciprete, M. Palummo, O. Pulci, R. Calarco Online Ref
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