Contact architecture controls conductance in monolayer devices ACS Applied Materials & Interfaces 12, 28446 (2020) K. Saller, K.-C. Liao, H. Riedl, P. Lugli, G. Koblmueller, J. Schwartz, M. Tornow Online Ref
Optical absorption of composition-tunable InGaAs nanowire arrays Nanotechnology 30, 495703 (2019) J. Treu, X. Xu, K. Ott, K. Saller, G. Abstreiter, J. J. Finley, G. Koblmueller Online Ref
The one-step transfer printing of patterned nanogap electrodes J. Vac. Sci. Technol. B 37, 040602 (2019) K. Saller, H. Riedl, P. Lugli, G. Koblmueller, M. Tornow Online Ref
Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires Appl. Phys. Lett. 112, 091904 (2018) M. Sonner, J. Treu, K. Saller, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy Appl. Phys. Lett. 108, 053110 (2016) J. Treu, M. Speckbacher, K. Saller, S. Morkoetter, M. Doeblinger, X. Xu, H. Riedl, G. Abstreiter, J. J. Finley, G. Koblmueller Online Ref
Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires Nano Letters 16, 5135 (2016) M. Speckbacher, J. Treu, T. J. Whittles, W. M. Linhart, X. Xu, K. Saller, V. R. Dhanak, G. Abstreiter, J. J. Finley, T. D. Veal, G. Koblmueller Online Ref
Lattice-matched InGaAs–InAlAs core–shell nanowires with improved luminescence and photoresponse properties Nano Letters 15, 3533 (2015) J. Treu, T. Stettner, M. Watzinger, S. Morkoetter, M. Doeblinger, S. Matich, K. Saller, M. Bichler, G. Abstreiter, J. J. Finley, J. Stangl, G. Koblmueller Online Ref
Strong THz emission and its origin from catalyst-free InAs nanowire arrys Nano Letters 14, 1508 (2014) A. Arlauskas, J. Treu, K. Saller, I. Beleckaite, G. Koblmueller, A. Krotkus Online Ref
Enhanced luminescence properties of InAs–InAsP core–shell nanowires Nano Letters 13, 6070 (2013) J. Treu, M. Bormann, H. Schmeiduch, M. Doeblinger, S. Morkötter, S. Matich, P. Wiecha, K. Saller, B. Mayer, M. Bichler, M. C. Amann, J. Finley, G. Abstreiter, G. Koblmueller Online Ref
1.3µm High-Power Short-Cavity VCSELs for High-Speed Applications San José, CA, USA (2012) (2012) M. Mueller, C. Grasse, K. Saller, T. Gruendl, G. Boehm, M. Ortsiefer, M. C. Amann
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm 16th International Conference on Molecular Beam Epitaxy MBE 2010 (2010) K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, M. C. Amann
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm doi:10.1016/j.jcrysgro.2010.11.139 (2010) K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, M. C. Amann
Walter Schottky Institut