Growth and characterization of β-Ga2O3 thin films on different substrates Journal of Applied Physics 125, 105701 (2019) S. J. Hao, M. Hetzl, F. Schuster, K. Danielewicz, A. Bergmaier, G. Dollinger, Q. L. Sai, C. T. Xia, T. Hoffmann, M. Wiesinger, S. Matich, W. Aigner, M. Stutzmann Online Ref
Growth mechanisms of F4-TCNQ on inorganic substrates and nanostructures Materials Research Express 6, 2 (2018) H. Schamoni, M. Hetzl, T. Hoffmann, K. Stoiber, S. Matich, M. Stutzmann Online Ref
GaN Nanowire Arrays for Efficient Optical Read-Out and Optoelectronic Control of NV Centers in Diamond Nano Letters 18, 3651–3660 (2018) M. Hetzl, J. Wierzbowski, T. Hoffmann, M. Kraut, V. Zuerbig, C. E. Nebel, K. Mueller, J. J. Finley, M. Stutzmann Online Ref
A systematic investigation of radiative recombination in GaN nanowires: The influence of nanowire geometry and environmental conditions J. Appl. Phys. 124, 035704 (2018) M. Hetzl, M. Kraut, T. Hoffmann, J. Winnerl, K. Boos, A. Zeidler, I.D. Sharp, M. Stutzmann Online Ref
Walter Schottky Institut