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Nanostructured Black Silicon as a Stable and Surface-Sensitive Platform for Time-Resolved In Situ Electrochemical Infrared Absorption Spectroscopy
ACS Applied Materials and Interfaces 16, 6653 (2024)
F. Rauh, J. Dittloff, M. Thun, M. Stutzmann, I.D. Sharp
Online Ref | Annealing-Free Ohmic Contacts to n-Type GaN via Hydrogen Plasma-Assisted Atomic Layer Deposition of Sub-Nanometer AlOx
Advanced Materials Interfaces 11, 2300758 (2024)
M. Christis, A. Henning, J.D. Bartl, A. Zeidler, B. Rieger, M. Stutzmann, I.D. Sharp
Online Ref | Conversion of a 3D printer for versatile automation of dip coating processes
Rev. Sci. Instrum. 94, 083901 (2023)
F. Rauh, O. Bienek, I.D. Sharp, M. Stutzmann
Online Ref | Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina
Advanced Materials Interfaces 10, 2202166 (2023)
A. Henning, J.D. Bartl, L. Wolz, M. Christis, F. Rauh, M. Bissolo, T. Grünleitner, J. Eichhorn, P. Zeller, M. Amati, L. Gregoratti, J.J. Finley, B. Rieger, M. Stutzmann, I.D. Sharp
Online Ref | Modular Assembly of Vibrationally and Electronically Coupled Rhenium Bipyridine Carbonyl Complexes on Silicon
J. Am. Chem. Soc. 143, 19505 (2021)
J.D. Bartl, C. Thomas, A. Henning, M.F. Ober, G. Savasci, B. Yazdanshenas, P.S. Deimel, E. Magnano, F. Bondino, P. Zeller, L. Gregoratti, M. Amati, C. Paulus, F. Allegretti, A. Cattani-Scholz, J.V. Barth, C. Ochsenfeld, B. Nickel, I.D. Sharp, M. Stutzmann, B. Rieger
Online Ref | Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
Advanced Functional Materials 31, 2101441 (2021)
A. Henning, J.D. Bartl, A. Zeidler, S. Qian, O. Bienek, C.-M. Jiang, C. Paulus, B. Rieger, M. Stutzmann, I.D. Sharp
Online Ref | Control of Band Gap and Band Edge Positions in Gallium–Zinc Oxynitride Grown by Molecular Beam Epitaxy
J. Phys. Chem. C 124, 7668 (2020)
M. Kraut, E. Sirotti, F. Pantle, C.-M. Jiang, G. Grötzner, M. Koch, L.I. Wagner, I.D. Sharp, M. Stutzmann
Online Ref | Sub-bandgap optical spectroscopy of epitaxial beta-Ga2O3 thin films
Appl. Phys. Lett. 116, 092102 (2020)
S. Hao, M. Hetzl, V.F. Kunzelmann, S. Matich, Q. Sai, C. Xia, I.D. Sharp, M. Stutzmann
Online Ref | Growth and characterization of β-Ga2O3 thin films on different substrates
Journal of Applied Physics 125, 105701 (2019)
S. J. Hao, M. Hetzl, F. Schuster, K. Danielewicz, A. Bergmaier, G. Dollinger, Q. L. Sai, C. T. Xia, T. Hoffmann, M. Wiesinger, S. Matich, W. Aigner, M. Stutzmann
Online Ref | Photo-induced selective etching of GaN nanowires in water
Nanoscale 11, 7967 (2019)
M. Kraut, F. Pantle, J. Winnerl, M. Hetzl, F. Eckmann, I.D. Sharp, M. Stutzmann
Online Ref | Growth mechanisms of F4-TCNQ on inorganic substrates and nanostructures
Materials Research Express 6, 2 (2018)
H. Schamoni, M. Hetzl, T. Hoffmann, K. Stoiber, S. Matich, M. Stutzmann
Online Ref | |
| Intra- and inter-nanocrystal charge transport in nanocrystal films
Nanoscale 10, 8042 (2018)
W. Aigner, O. Bienek, B.P. Falcã, S.U. Ahmed, H. Wiggers, M. Stutzmann, R.N. Pereira
Online Ref | GaN Nanowire Arrays for Efficient Optical Read-Out and Optoelectronic Control of NV Centers in Diamond
Nano Letters 18, 3651–3660 (2018)
M. Hetzl, J. Wierzbowski, T. Hoffmann, M. Kraut, V. Zuerbig, C. E. Nebel, K. Mueller, J. J. Finley, M. Stutzmann
Online Ref | A systematic investigation of radiative recombination in GaN nanowires: The influence of nanowire geometry and environmental conditions
J. Appl. Phys. 124, 035704 (2018)
M. Hetzl, M. Kraut, T. Hoffmann, J. Winnerl, K. Boos, A. Zeidler, I.D. Sharp, M. Stutzmann
Online Ref | Optical design of GaN nanowire arrays for photocatalytic applications
Journal of Applied Physics 123, 203104 (2018)
J. Winnerl, R. Hudeczek, M. Stutzmann
Online Ref | Anhydrous Ethanol Dehydrogenation on MOCVD-Grown GaN(0001)
JOURNAL OF PHYSICAL CHEMISTRY C 121, 16393 (2017)
C. A. Walenta, S. L. Kollmannsberger, R. N. Pereira, M. Tschurl, M. Stutzmann, U. Heiz
Online Ref | Doping-Dependent Adsorption and Photon-Stimulated Desorption of CO on GaN(0001)
JOURNAL OF PHYSICAL CHEMISTRY C 121, 8473-8479 (2017)
S. L. Kollmannsberger, C. A. Walenta, A. Winnerl, S. Weiszer, R. N. Pereira, M. Tschurl, M. Stutzmann, U. Heiz
Online Ref | Efficient Electrical Spin Readout of NV- Centers in Diamond
Phys. Rev. Lett. 118, 37601 (2017)
F. Hrubesch, G. Braunbeck, M. Stutzmann, F. Reinhard, M. S. Brandt
Online Ref | Ethanol Surface Chemistry on MBE-grown GaN(0001), GaOx/GaN(0001) and Ga2O3(-201)
THE JOURNAL OF CHEMICAL PHYSICS 147, 124704 (2017)
S. L. Kollmannsberger, C. A. Walenta, A. Winnerl, F. Knoller, R. N. Pereira, M. Tschurl, M. Stutzmann, U. Heiz
Online Ref | Optoelectronic properties and depth profile of charge transport in nanocrystal films
PHYSICAL REVIEW B 96, 35404 (2017)
W. Aigner, O. Bienek, D. Desta, H. Wiggers, M. Stutzmann, R. N. Pereira
Online Ref | Silicon Nanocrystal Superlattice Nucleation and Growth
LANGMUIR 33, 13068 (2017)
A. Guillaussier, Y. Yu, V. Reddy Voggu, W. Aigner, C. Saez Cabezas, D. W. Houck, T. Shah, D. M. Smilgies, R. N. Pereira, M. Stutzmann, B. A. Korgel
Online Ref | Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
AIP Advances 6, 045216 (2016)
J. Ju, B. Sun, G. Haunschild, B. Loitsch, B. Stoib, M. S. Brandt, M. Stutzmann, Y. K. Koh, G. Koblmueller
Online Ref | |
| Role of hydrogen in defining the n-type character of BiVO4
Chem. Mater. 28, 5761 (2016)
J.K. Cooper, S.B. Scott, Y. Ling, J. Yang, S. Hao, Y. Li, F.M. Toma, M. Stutzmann, K.V. Lakshmi, I.D. Sharp
Online Ref | Surface state mediated electron transfer across the n-type SiC/electrolyte interface
J. Phys. Chem. C 120, 6524 (2016)
M. Sachsenhauser, I.D. Sharp, M. Stutzmann, & J.A. Garrido
Online Ref | Suppression of photoanodic surface oxidation of n-type 6H-SiC electrodes in aqueous electrolytes
Langmuir 32, 1637 (2016)
M. Sachsenhauser, K.A. Walczak, P. Hempel, M. Stutzmann, I.D. Sharp, & J.A. Garrido
Online Ref | Charge Trapping Defects in CdSe Nanocrystal Quantum Dots
JOURNAL OF PHYSICAL CHEMISTRY C 120, 13763-13770 (2016)
A. J. Almeida, A. Sahu, A. Riedinger, D. J. Norris, M. S. Brandt, M. Stutzmann, R. N. Pereira
Online Ref | Doping efficiency and confinement of donors in embedded and free standing Si nanocrystals
PHYSICAL REVIEW B 93, 115425 (2016)
A. J. Almeida, H. Sugimoto, M. Fujii, M. S. Brandt, M. Stutzmann, R. N. Pereira
Online Ref | Silicon-based nanocomposites for thermoelectric application
Phys. Stat. Solidi A 213, 497 (2016) (2016)
G. Schierning, J. Stoetzel, R. Chavez, V. Kessler, J. Hall, R. Schmechel, T. Schneider, N. Petermann, H. Wiggers, S. Angst, D. E. Wolf, B. Stoib, A. Greppmair, M. Stutzmann, M. S. Brandt
Online Ref | Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
AIP Advances, 45216 (2016)
J. Zi-Jian Ju, B. Sun, G. Haunschild, B. Loitsch, B. Stoib, M. S. Brandt, M. Stutzmann, Y. K. Koh, G. Koblmueller
Online Ref | Three-Dimensional Percolation and Performance of Nanocrystal Field-Effect Transistors
PHYSICAL REVIEW APPLIED 5, 54017 (2016)
W. Aigner, M. Wiesinger, H. Wiggers, M. Stutzmann, R. N. Pereira
Online Ref | Bipolar polaron pair recombination in polymer/fullerene solar cells
Physical Review B 92, 245203 (2015)
A. Kupijai, K. M. Behringer, F. Schäble, N. Galfe, M. Corazza, S. A. Gevorgyan, F. C. Krebs, M. Stutzmann, M. S. Brandt
Online Ref | Broadband electrically detected magnetic resonance using adiabatic pulses
Journal of Magnetic Resonance 254, 62--69 (2015)
F. Hrubesch, G. Braunbeck, A. Voss, M. Stutzmann, M. S. Brandt
Online Ref | Electronic Changes Induced by Surface Modification of Cu2–xS Nanocrystals
JOURNAL OF PHYSICAL CHEMISTRY C 119, 16276-16285 (2015)
W. Aigner, G. K. Nenova, M. A. Sliem, R. A. Fischer, M. Stutzmann, R. N. Pereira
Online Ref | |
| Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors
Phys. Rev. Lett. 115, 57601 (2015)
D. Franke, F. Hrubesch, M. Künzl, H. W. Becker, K. M. Itoh, M. Stutzmann, F. Hoehne, L. Dreher, M. S. Brandt
Online Ref | Laser-Assisted Wet-Chemical Doping of Sintered Si and Ge Nanoparticle Films
Adv. Electron. Mater. 1, 1400029 (2015)
B. Stoib, A. Greppmair, N. Petermann, H. Wiggers, M. Stutzmann, M. S. Brandt
Online Ref | Photocurrent Generation in Diamond Electrodes Modified with Reaction Centers
ACS Applied Materials and Interfaces 7 (15), 8099 (2015)
R. Caterino, R. Csiki, A. Lyuleeva, J. Pfisterer, M. Wiesinger, S. D. Janssens, K. Haenen, A. Cattani-Scholz, M. Stutzmann, J. A. Garrido
Online Ref | Submillisecond Hyperpolarization of Nuclear Spins in Silicon
Phys. Rev. Lett. 114, 117602 (2015)
F. Hoehne, L. Dreher, D. Franke, M. Stutzmann, L. S. Vlasenko, K. M. Itoh, M. S. Brandt
Online Ref | Trade-off between morphology, extended defects, and compositional fluctuation induced carrier localization in high In-content InGaN films
J. App. Phys. 116, 053501 (2014)
J. Ju, B. Loitsch, T. Stettner, F. Schuster, M. Stutzmann, G. Koblmueller
Online Ref | Organophosphonate Biofunctionalization of Diamond Electrodes
ACS Applied Materials and Interfaces 6 (16), 13909 (2014)
R. Caterino, R. Csiki, M. Wiesinger, M. Sachsenhauser, G. Speranza, S. D. Janssens, K. Haenen, M. Stutzmann, J. A. Garrido, A. Cattani-Scholz
Online Ref | Addressing Single Nitrogen-Vacancy Centers in Diamond with Transparent in-Plane Gate Structures
No Reference given. 14, 2359–2364 (2014)
M. Hauf, P. Simon, N. Aslam, M. Pfender, P. Neumann, S. Pezzagna, J. Meijer, J. Wrachtrup, M. Stutzmann, F. Reinhard, J. A. Garrido
Online Ref | Low dimensionality of the surface conductivity of diamond
Phys. Rev. B 89, 115426 (2014)
M. Hauf, P. Simon, M. Seifert, A. Holleitner, M. Stutzmann, J. A. Garrido
Online Ref | Spatially resolved determination of thermal conductivity by Raman spectroscopy
Semicond. Sci. Technol. 29 (2014)
B. Stoib, S. Filser, J. Stötzel, A. Greppmair, N. Petermann, H. Wiggers, G. Schierning, M. Stutzmann, M. S. Brandt | Thermal conductivity of mesoporous films measured by Raman spectroscopy
Appl. Phys. Lett. 104, 161907 (2014)
B. Stoib, S. Filser, N. Petermann, H. Wiggers, M. Stutzmann, M. S. Brandt | Trade-off between morphology, extended defects and compositional fluctuation induced carrier localization in high In-content InGaN
J. Appl. Phys. 116, 53501 (2014)
J. Zi-Jian Ju, B. Loitsch, T. Stettner, F. Schuster, M. Stutzmann, G. Koblmueller
Online Ref | |
| Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy
Appl. Phys. Lett. 102, 051916 (2013)
B. Loitsch, F. Schuster, M. Stutzmann, G. Koblmueller
Online Ref | Charge transfer across the GaN/Pt nanoparticle interface in an electrolyte
ChemCatChem 5, 3224 (2013)
S. Schaefer, S.A. Wyrzgol, J.A. Lercher, M. Stutzmann, I.D. Sharp
Online Ref | Assessment of cell proliferation on 6H-SiC bio-functionalized with self-assembled monolayers
Mater. Res 28, 78 (2013)
A. Oliveros, C.L. Frewin, S.J. Schoell, M. Hoeb, M. Stutzmann, I.D. Sharp, & S.E. Saddow
Online Ref | Accurate determination of optical bandgap and lattice parametersof Zn1–xMgxO epitaxial films grown by plasma-assisted molecularbeam epitaxy on a-plane sapphire
J. Appl. Phys. 113, 233512 (2013)
B. Laumer, F. Schuster, M. Stutzmann, A. Bergmaier, G. Dollinger, M. Eickhoff
Online Ref | Electrically detected double electron-electron resonance: exchange interaction of 31P donors and Pb0 defects at the Si/SiO2 interface
Molecular Physics 111, 2690 (2013)
M. Suckert, F. Hoehne, L. Dreher, K. Markus, M. Stutzmann, M. S. Brandt, H. Huebl
Online Ref | Functional Polymer Brushes on Diamond as a Platform for Immobilization and Electrical Wiring of Biomolecules
Advanced Functional Materials (2013)
A. Reitinger, N. A. Hutter, A. Donner, M. Steenackers, O. A. Williams, M. Stutzmann, R. Jordan, J. A. Garrido
Online Ref | Functional Polymer Brushes on Hydrogenated Graphene
Chemistry of Materials 25, 466-470 (2013)
M. Seifert, A. H. R. Koch, F. Deubel, T. Simmet, L. Hess, M. Stutzmann, R. Jordan, J. A. Garrido, I. D. Sharp
Online Ref | Functional Polymer Brushes on Hydrogenated Graphene
Chem. Mater. (2013)
M. Seifert, A. Koch, F. Deubel, T. Simmet, L. Hess, M. Stutzmann, R. Jordan, J. A. Garrido, I. D. Sharp
Online Ref | Improved Black Silicon for Photovoltaic Applications
Advanced Energy Materials 3, 1068 (2013)
M. Algasinger, J. Paye, F. Werner, J. Schmidt, M. S. Brandt, M. Stutzmann, S. Koynov
Online Ref | Morphology, thermoelectric properties and wet-chemical doping of laser-sintered germanium nanoparticles
210 (2013)
B. Stoib, T. Langmann, N. Petermann, S. Matich, M. Sachsenhauser, H. Wiggers, M. Stutzmann, M. S. Brandt
Online Ref | Organic Functionalization of 3C-SiC Surfaces
ACS Appl. Mater. Interfaces 5, 1393–1399 (2013)
S. Schoell, M. Sachsenhauser, A. Oliveros, J. Howgate, M. Stutzmann, M. S. Brandt, C. Frewin, S. Saddow, I. D. Sharp
Online Ref | |
| Physical unclonable functions based on crossbar arrays for cryptographic applications
International Journal of Circuit Theory and Applications 41, 619 (2013)
P. Lugli, A. Mahmoud, G. Csaba, M. Algasinger, M. Stutzmann, U. Rührmair
Online Ref | Reduced threading dislocation densities densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy
Appl. Phys. Lett., 51916 (2013)
B. Loitsch, F. Schuster, M. Stutzmann, G. Koblmueller
Online Ref | The electrically detected magnetic resonance microscope: Combining conductive atomic force microscopy with electrically detected magnetic resonance
Rev. Sci. Instr. 84, 103911 (2013)
K. Klein, B. Hauer, B. Stoib, M. Trautwein, S. Matich, H. Huebl, O. Astakhov, F. Finger, R. Bittl, M. Stutzmann, M. S. Brandt
Online Ref | Time constants of spin-dependent recombination processes
Phys. Rev. B 88, 155301 (2013)
F. Hoehne, L. Dreher, M. Suckert, D. Franke, M. Stutzmann, M. S. Brandt
Online Ref | Biofunctional Electrolyte-Gated Organic Field-Effect Transistors
Advanced Materials 24, 4511 (2012)
F. Buth, A. Donner, M. Sachsenhauser, M. Stutzmann, J. A. Garrido
Online Ref | Charge state manipulation of qubits in diamond
Nature Communications 3, 729 (2012)
B. Grotz, M. Hauf, M. Dankerl, B. Naydenov, S. Pezzagna, J. Meijer, F. Jelezko, J. Wrachtrup, M. Stutzmann, F. Reinhard, J. A. Garrido
Online Ref | Charge Transfer across the n-Type GaN-Electrolyte Interface
Journal of Physical Chemistry C 116, 22281 (2012)
S. Schäfer, A. H. R. Koch, A. Cavallini, M. Stutzmann, I. D. Sharp
Online Ref | Diamond solution-gated field effect transistors: Properties and bioelectronic applications
physica status solidi (2012)
M. Dankerl, M. Hauf, M. Stutzmann, J. A. Garrido
Online Ref | Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange
Scripta Materialia 66, 550--553 (2012)
B. I. Birajdar, T. Antesberger, B. Butz, M. Stutzmann, E. Spiecker
Online Ref | Enzyme-modified electrolyte-gated organic field effect transistors
- Organic Semiconductors in Sensors and Bioelectronics V 84790M (2012)
F. Buth, A. Donner, M. Stutzmann, J. A. Garrido
Online Ref | Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnOby plasma-assisted molecular beam epitaxy
Appl. Phys. Lett. 101, 122106 (2012)
B. Laumer, F. Schuster, M. Stutzmann, A. Bergmaier, G. Dollinger, S. Vogel, K. Gries, K. Volz, M. Eickhoff
Online Ref | |
| In vitro bio-functionality of gallium nitride sensors for radiation biophysics
Biochemical and Biophysical Research Communications 424 2 (2012)
M. Hofstetter, J. Howgate, M. Schmid, S. Schoell, M. Sachsenhauser, D. Adigüzel, M. Stutzmann, I. D. Sharp, S. Thalhammer
Online Ref | Laser-sintered thin films of doped SiGe nanoparticles
100 (2012)
B. Stoib, T. Langmann, S. Matich, T. Antesberger, N. Stein, S. Angst, N. Petermann, R. Schmechel, G. Schierning, D. E. Wolf, H. Wiggers, M. Stutzmann, M. S. Brandt
Online Ref | Lock-in detection for pulsed electrically detected magnetic resonance
Rev. Sci. Instr. 83, 43907 (2012)
F. Hoehne, L. Dreher, J. Behrends, M. Fehr, H. Huebl, K. Lips, A. Schnegg, M. Suckert, M. Stutzmann, M. S. Brandt
Online Ref | Nuclear Spins of Ionized Phosphorus Donors in Silicon
Phys. Rev. Lett. 108, 27602 (2012)
L. Dreher, F. Hoehne, M. Stutzmann, M. S. Brandt
Online Ref | Solid polyelectrolyte-gated surface conductive diamond field effect transistors
Applied Physics Letters 100, 23510 (2012)
M. Dankerl, M. Tosun, M. Stutzmann, J. A. Garrido
Online Ref | Thermodynamic Efficiency Limit of Molecular Donor-Acceptor Solar Cells and its Application to Diindenoperylene/C60-Based Planar Heterojunction Devices
Advanced Energy Materials 2, 1100 (2012)
M. Gruber, J. Wagner, K. Klein, U. Hörmann, A. Opitz, M. Stutzmann, W. Brütting
Online Ref | Ultrahigh gain AlGaN/GaN high energy radiation detectors
(2012)
J. Howgate, M. Hofstetter, S. Schoell, M. Schmid, S. Schäfer, I. Zizak, V. Hable, C. Greubel, G. Dollinger, S. Thalhammer, M. Stutzmann, I. D. Sharp
Online Ref | ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers
J. Appl. Phys. 111, 113504 (2012)
B. Laumer, F. Schuster, T. Wassner, M. Stutzmann, M. Rohnke, J. Schörmann, M. Eickhoff
Online Ref | Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiC
ACS Appl. Mater. Interfaces 3, 4286 (2011)
R. Dietmueller, H. Nesswetter, S.J. Schoell, I.D. Sharp, & M. Stutzmann
Online Ref | Chemical control of the charge state of nitrogen-vacancy centers in diamond
Phys. Rev. B 83, 81304 (2011)
M. Hauf, B. Grotz, B. Naydenov, M. Dankerl, S. Pezzagna, J. Meijer, F. Jelezko, J. Wrachtrup, M. Stutzmann, F. Reinhard, J. A. Garrido
Online Ref | Development and evaluation of gallium nitride-based thin films for x-ray dosimetry
(2011)
M. Hofstetter, J. Howgate, I. D. Sharp, M. Stutzmann, S. Thalhammer
Online Ref | |
| Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon using Pulsed ENDOR
Phys. Rev. Lett. 106, 187601 (2011)
F. Hoehne, L. Dreher, H. Huebl, M. Stutzmann, M. S. Brandt
Online Ref | Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination
Applied Physics Letters 98, 182106 (2011)
S. Schoell, J. Howgate, M. Hoeb, M. Auernhammer, J. A. Garrido, M. Stutzmann, I. D. Sharp
Online Ref | Electrically Detected Electron-Spin-Echo Envelope Modulation: A Highly Sensitive Technique for Resolving Complex Interface Structures
Phys. Rev. Lett. 106, 196101 (2011)
F. Hoehne, J. Lu, A. R. Stegner, M. Stutzmann, M. S. Brandt, M. Rohrmüller, W. G. Schmidt, U. Gerstmann
Online Ref | Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon
Phys. Rev. Lett. 106, 37601 (2011)
L. Dreher, T. Hilker, A. Brandlmaier, S. T. B. Goennenwein, H. Huebl, M. Stutzmann, M. S. Brandt
Online Ref | Electrolyte-gated organic field-effect transistors for sensing applications
Applied Physics Letters 98, 153302 (2011)
F. Buth, D. Kumar, M. Stutzmann, J. A. Garrido
Online Ref | Epitaxial upward transport of Al at the beginning of the Al-induced layer exchange process
physica status solidi (RRL) – Rapid Research Letters 5, 172-174 (2011)
B. Birajdar, T. Antesberger, M. Stutzmann, E. Spiecker
Online Ref | Exciton confinement in homo- and heteroepitaxial ZnO/Zn1-xMgxO quantum wells with x<0.1
J. Appl. Phys. 110, 93513 (2011)
B. Laumer, T. Wassner, F. Schuster, M. Stutzmann, J. Schörmann, M. Rohnke, A. Chernikov, V. Bornwasser, M. Koch, S. Chatterjee, M. Eickhoff
Online Ref | Graphene Transistor Arrays for Recording Action Potentials from Electrogenic Cells
23 (2011)
L. Hess, M. Jansen, V. Maybeck, M. Hauf, M. Seifert, M. Stutzmann, I. D. Sharp, A. Offenhäusser, J. A. Garrido
Online Ref | High-resolution electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon
Phys. Rev. B 83 (2011)
J. Lu, F. Hoehne, A. Stegner, L. Dreher, M. Stutzmann, M. S. Brandt, H. Huebl
Online Ref | High-transconductance graphene solution-gated field effect transistors
99 (2011)
L. Hess, M. Hauf, M. Seifert, F. Speck, T. Seyller, M. Stutzmann, I. D. Sharp, J. A. Garrido
Online Ref | Hydrophobic Interaction and Charge Accumulation at the Diamond-Electrolyte Interface
Physical Review Letters 106, 196103 (2011)
M. Dankerl, A. Lippert, S. Birner, U. Stützel, M. Stutzmann, J. A. Garrido
Online Ref | |
| Polymer brushes on graphene
Journal of the American Chemical Society 133, 10490 (2011)
M. Steenackers, A. M. Gigler, N. Zhang, F. Deubel, M. Seifert, L. Hess, C. H. Y. X. Lim, K. P. Loh, J. A. Garrido, R. Jordan, M. Stutzmann, I. D. Sharp
Online Ref | Purification of Nano-Porous Silicon for Biomedical Applications
ADVANCED BIOMATERIALS 13, B225 (2011)
S. Koynov, R. N. Pereira, I. Crnolatac, D. Kovalev, A. Huygens, V. Chirvony, M. Stutzmann, P. de Witte
Online Ref | Role of structural order and excess energy on ultrafast free charge generation in hybrid polythiophene/Si photovoltaics probed in realtime by near-infrared broadband transient absorption
Journal of the American Chemical Society 133, 18220 (2011)
D. Herrmann, S. Niesar, C. Scharsich, A. Köhler, M. Stutzmann, E. Riedle | Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System
50, 25002 (2011)
Y. Nakamine, N. Inaba, T. Kodera, K. Uchida, R. N. Pereira, A. Stegner, M. S. Brandt, M. Stutzmann, S. Oda
Online Ref | Solution-processed networks of silicon nanocrystals: The role of internanocrystal medium on semiconducting behavior
JOURNAL OF PHYSICAL CHEMISTRY C 115, 20120 (2011)
R. N. Pereira, S. Niesar, W. B. You, A. F. da Cunha, N. Erhard, A. R. Stegner, H. Wiggers, M. G. Willinger, M. Stutzmann, M. S. Brandt
Online Ref | Strahlenbiophysik, Strahleneffekte, Dosimeter oder Biosensor?
Labor & More 4.11, 52-54 (2011)
M. Hofstetter, J. Howgate, I. D. Sharp, M. Schmid, M. Stutzmann, S. Thalhammer | Thermally induced alkylation of diamond
LANGMUIR 26, 18862 (2010). (2010)
M. Hoeb, M. Auernhammer, S. Schoell, M. S. Brandt, J. A. Garrido, M. Stutzmann, I. D. Sharp
Online Ref | Combined TPRx, in situ GISAXS and GIXAS studies of model semiconductor-supported platinum catalysts in the hydrogenation of ethene
Physical Chemistry Chemical Physics 12, 5585 (2010)
S. A. Wyrzgol, S. Schäfer, S. Lee, B. Lee, M. Di Vece, X. Li, S. Seifert, R. E. Winans, M. Stutzmann, J. A. Lercher, S. Vajda
Online Ref | Controlling Surface Functionality through Generation of Thiol Groups in a Self-Assembled Monolayer
(2010)
S. Q. Lud, S. Neppl, G. Richter, P. Bruno, D. M. Gruen, P. Feulner, M. Stutzmann, J. A. Garrido
Online Ref | Electronic properties of ultrananocrystalline diamond surfaces
No Reference given. (2010)
S. Q. Lud, M. Niedermeier, P. Koch, D. M. Gruen, P. Bruno, M. Stutzmann, J. A. Garrido
Online Ref | Graphene Solution-Gated Field-Effect Transistor Array for Sensing Applications
Advanced Functional Materials 20, 3117–3124 (2010)
M. Dankerl, M. Hauf, A. Lippert, L. Hess, S. Birner, I. D. Sharp, A. Mahmood, P. Mallet, J. Y. Veuillen, M. Stutzmann, J. A. Garrido
Online Ref | |
| Isotope effect on electron paramagnetic resonance of boron acceptors in silicon
PHYSICAL REVIEW B 82, 115213 (2010)
A. R. Stegner, H. Tezuka, T. Andlauer, M. Stutzmann, M. L. W. Thewalt, M. S. Brandt, K. M. Itoh | Low-frequency noise in diamond solution-gated field effect transistors
Applied Physics Letters 97, 93504 (2010)
M. Hauf, L. Hess, J. Howgate, M. Dankerl, M. Stutzmann, J. A. Garrido
Online Ref | Optical characterization of AlGaN/GaN quantum disc structures in single nanowires
7, 2233-2235 (2010)
L. Rigutti, F. Fortuna, M. Tchernycheva, A. D. L. Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff
Online Ref | Origin of energy dispersion in Al_xGa_(1-x)/GaN nanowire quantum discs with low Al content
Phys. Rev. B 82, 235308 (2010)
L. Rigutti, J. Teubert, G. Jacopin, F. Fortuna, M. Tchernycheva, A. D. L. Bugallo, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff
Online Ref | Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates
Advanced Materials 22, 2632 (2010)
J. Howgate, S. Schoell, M. Hoeb, W. Steins, B. Baur, S. Hertrich, B. Nickel, I. D. Sharp, M. Stutzmann, M. Eickhoff
Online Ref | Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond
97 (2010)
M. Stallhofer, M. Seifert, M. Hauf, G. Abstreiter, M. Stutzmann, J. A. Garrido, A. Holleitner
Online Ref | Photoluminescence polarization properties of single GaN nanowires containing AlxGa1-xN/GaN quantum discs
Phys. Rev. B 81 (2010)
L. Rigutti, M. Tchernycheva, A. du Luna Bugallo, G. Jacopin, F. H. Julien, F. Furtmayr, M. Stutzmann, M. Eickhoff, R. Songmuang, F. Fortuna
Online Ref | Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices
(2010)
M. Hofstetter, J. Howgate, I. D. Sharp, M. Funk, M. Stutzmann, H. Paretzke, S. Thalhammer
Online Ref | Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
PHYSICAL REVIEW LETTERS 104, 46402 (2010)
F. Hoehne, H. Huebl, B. Galler, M. Stutzmann, M. S. Brandt
Online Ref | Structured polymer brushes on silicon carbide
CHEMISTRY OF MATERIALS 22 272 (2010)
M. Steenackers, I. D. Sharp, K. Larsson, N. A. Hutter, M. Stutzmann, R. Jordan
Online Ref | Applications of High-Capacity Crossbar Memories in Cryptography
IEEE Transactions on, Nanotechnology 99, 1 (2010)
U. Rührmair, C. Jaeger, M. Bator, M. Stutzmann, P. Lugli, G. Csaba
Online Ref | |
| Diamond transistor array for extracellular recording from electrogenic cells
Adv. Funct. Mater 19, 2915–2923 (2009)
M. Dankerl, B. Hofmann, S. Eick, M. Hauf, S. Ingebrandt, A. Offenhäuser, M. Stutzmann, J. A. Garrido
Online Ref | Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation
PHYSICAL REVIEW B 80, 165326 (2009)
A. R. Stegner, R. N. Pereira, R. Lechner, K. Klein, H. Wiggers, M. Stutzmann, M. S. Brandt
Online Ref | Electrochemical impedance spectroscopy of oxidized and hydrogen-terminated nitrogen-induced conductive ultrananocrystalline diamond
Electrochimica Acta 54, 1909 (2009)
J. Hernando, S. Q. Lud, P. Bruno, D. M. Gruen, M. Stutzmann, J. A. Garrido
Online Ref | Electronic and optical properties of boron-doped nanocrystalline diamond films
Phys. Rev. B 79, 45206 (2009)
W. Gajewski, O. A. Williams, P. Achatz, K. Haenen, E. Bustarret, M. Stutzmann, J. A. Garrido | Electronic transport at the interface between diamond and aqueous electrolyte
DPG Fruehjahrstagung (2009)
M. Dankerl, U. Stützel, A. Lippert, M. Stutzmann, J. A. Garrido | GaN quantum dots as optical transducers for chemical sensors
Applied Physics Letters 94, 113108 (2009)
O. Weidemann, P. K. Kandaswamy, E. Monroy, G. Jegert, M. Stutzmann, M. Eickhoff
Online Ref | Influence of hydrogen on nanocrystalline diamond surfaces investigated with HREELS and XPS
Phys. stat. sol. A 206 (2009)
T. Haensel, J. Uhlig, R. J. Koch, S. I.- U. Ahmed, J. A. Garrido, D. Steinmüller-Nethl, M. Stutzmann, J. A. Schaefer
Online Ref | Manganese-hydrogen complexes in Ga1-xMnxN
PHYSICAL REVIEW B 80, 205205 (2009)
C. Bihler, U. Gerstmann, M. Hoeb, T. Graf, M. Gjukic, W. G. Schmidt, M. Stutzmann, M. S. Brandt
Online Ref | Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy
Journal of Applied Physics 105, 23505 (2009)
T. Wassner, B. Laumer, S. Maier, A. Laufer, B. Meyer, M. Stutzmann, M. Eickhoff | Photoresponse and morphology of pentacene thin films modified by oxidized and reduced diamond surfaces
Phys. Rev. (2009)
W. Gajewski, M. Huth, F. Buth, B. Nickel, M. Stutzmann, J. A. Garrido
Online Ref | Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking
Nanotechnology 20 (2009)
J. Arbiol, S. Estradé, J. D. Prades, A. Ciera, F. Furtmayr, C. Stark, A. Laufer, M. Stutzmann, M. Eickhoff, M. H. Gass, A. L. Bleloch, F. Peió, J. R. Morante
Online Ref | |
| Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage
Sensors and Actuators B: Chemical 142 1 304-307 (2009)
A. Encabo, J. Howgate, M. Stutzmann, M. Eickhoff, M. A. Sánchez-García
Online Ref | Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks
PHYSICAL REVIEW LETTERS 100, 26803 (2008)
A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, H. Wiggers
Online Ref | Enzyme-modified field effect transistors based on surface conductive single crystalline diamond
Langmuir 24 (1), 9898 – 9906 (2008)
A. Haertl, B. Baur, M. Stutzmann, J. A. Garrido
Online Ref | Functionalization of 6H-SiC surfaces with organosilanes
APPLIED PHYSICS LETTERS 92 15 153301 (2008)
S. J. Schoell, M. Hoeb, I. D. Sharp, W. Steins, M. Eickhoff, M. Stutzmann, M. S. Brandt
Online Ref | Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
Journal of Applied Physics 104 (2008)
F. Furtmayr, M. Vielemeyer, M. Stutzmann, S. Estradé, F. Peirò, J. R. Morante, M. Eickhoff
Online Ref | Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy
Journal of Applied Physics 104 (2008)
F. Furtmayr, M. Vielemeyer, M. Stutzmann, A. Laufer, B. K. Meyer, M. Eickhoff
Online Ref | Resolving the controversy on the pH sensitivity of diamond surfaces
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 2 31-33 (2008)
M. Dankerl, A. Reitinger, M. Stutzmann, J. A. Garrido
Online Ref | Spin echoes in the charge transport through phosphorus donors in silicon
PHYSICAL REVIEW LETTERS 100 17 177602 (2008)
H. Huebl, F. Hoehne, B. Grolik, A. R. Stegner, M. Stutzmann, M. S. Brandt
Online Ref | Fabrication of freestanding GaN microstructures using AlN sacrificial layers
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 1 R10-R12 (2007)
E. Zaus, M. Hermann, M. Stutzmann, M. Eickhoff
Online Ref | Light-induced dielectrophoretic manipulation of DNA
BIOPHYSICAL JOURNAL 93 1032-1038 (2007)
M. Hoeb, J. O. Radler, S. Klein, M. Stutzmann, M. S. Brandt
Online Ref | Structured polymer grafts on diamond
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 129 15655-15661 (2007)
M. Steenackers, S. Q. Lud, M. Niedermeier, P. Bruno, D. M. Gruen, P. Feulner, M. Stutzmann, J. A. Garrido, R. Jordan
Online Ref | |
| Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors
Applied Physics Letters 89 18 183901 (2006)
B. Baur, J. Howgate, H. G. vonRibbeck, Y. Gawlina, V. Bandalo, G. Steinhoff, M. Stutzmann, M. Eickhoff
Online Ref | Direct biofunctionalization of semiconductors: A survey
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 14 3424-3437 (2006)
M. Stutzmann, J. A. Garrido, M. Eickhoff, M. S. Brandt
Online Ref | Electrical detection of coherent P-31 spin quantum states
NATURE PHYSICS 2 12 835-838 (2006)
A. R. Stegner, C. Boehme, H. Huebl, M. Stutzmann, K. Lips, M. S. Brandt
Online Ref | Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen
APPLIED PHYSICS LETTERS 88 2 024101 (2006)
A. T. Winzer, R. Goldhahn, G. Gobsch, A. Dadgar, A. Krost, O. Weidemann, M. Stutzmann, M. Eickhoff
Online Ref | Impact of silicon incorporation on the formation of structural defects in AlN
JOURNAL OF APPLIED PHYSICS 100 113531 (2006)
M. Hermann, F. Furtmayr, F. M. Morales, O. Ambacher, M. Stutzmann, M. Eickhoff
Online Ref | Indium nitride and indium rich related alloys: Challenges and opportunities
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 1 11-11 (2006)
M. Leszcynski, P. Ruterana, M. Stutzmann, C. Wood | Luminescence properties of highly Si-doped AlN
APPLIED PHYSICS LETTERS 88 7 071906 (2006)
E. Monroy, J. Zenneck, G. Cherkashinin, O. Ambacher, M. Hermann, M. Stutzmann, M. Eickhoff
Online Ref | Nearly stress-free substrates for GaN homoepitaxy
JOURNAL OF CRYSTAL GROWTH 293 2 462-468 (2006)
M. Hermann, D. Gogova, D. Siche, M. Schmidbauer, B. Monemar, M. Stutzmann, M. Eickhoff
Online Ref | Optical properties of nanocrystalline diamond thin films
APPLIED PHYSICS LETTERS 88 10 101908 (2006)
P. Achatz, J. A. Garrido, M. Stutzmann, O. A. Williams, D. M. Gruen, A. Kromka, D. Steinmuller
Online Ref | Phosphorus donors in highly strained silicon
PHYSICAL REVIEW LETTERS 97 16 166402 (2006)
H. Huebl, A. R. Stegner, M. Stutzmann, M. S. Brandt, G. Vogg, F. Bensch, E. Rauls, U. Gerstmann
Online Ref | Recording of cell action potentials with AlGaN/GaN field-effect transistors (vol 86, pg 033901, 2005)
APPLIED PHYSICS LETTERS 89 1 019901 (2006)
G. Steinhoff, B. Baur, G. Wrobel, S. Ingebrandt, A. Offenhausser, A. Dadgar, A. Krost, M. Stutzmann, M. Eickhoff
Online Ref | |
| Synthetic nanocrystalline diamond as a third-generation biosensor support
LANGMUIR 22 13 5837-5842 (2006)
J. Rubio-Retama, J. Hernando, B. Lopez-Ruiz, A. Haertl, D. Steinmuller, M. Stutzmann, E. Lopez-Cabarcos, J. A. Garrido
Online Ref | Chemical functionalization of GaN and AlN surfaces
APPLIED PHYSICS LETTERS 87 26 263901 (2005)
B. Baur, G. Steinhoff, J. Hernando, O. Purrucker, M. Tanaka, B. Nickel, M. Stutzmann, M. Eickhoff
Online Ref | Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy
APPLIED PHYSICS LETTERS 86 19 192108 (2005)
M. Hermann, F. Furtmayr, A. Bergmaier, G. Dollinger, M. Stutzmann, M. Eickhoff
Online Ref | In honour of Professor Johannes Heydenreich - Preface
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 202 12 2247-2248 (2005)
W. Neumann, M. Stutzmann, S. Hildebrandt | Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy
APPLIED PHYSICS LETTERS 86 8 083507 (2005)
O. Weidemann, E. Monroy, E. Hahn, M. Stutzmann, M. Eickhoff
Online Ref | Patterned surfaces for in vitro hydroxyapatite growth
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7 1 469-472 (2005)
L. Pramatarova, E. Pecheva, R. Presker, M. Stutzmann, M. Hanzlik | pH sensors based on hydrogenated diamond surfaces
APPLIED PHYSICS LETTERS 86 7 073504 (2005)
J. A. Garrido, A. Haertl, S. Kuch, M. Stutzmann, O. A. Williams, R. B. Jackmann
Online Ref | Recording of cell action potentials with AlGaN/GaN field-effect transistors
APPLIED PHYSICS LETTERS 86 3 033901 (2005)
G. Steinhoff, B. Baur, G. Wrobel, S. Ingebrandt, A. Offenhausser, A. Dadgar, A. Krost, M. Stutzmann, M. Eickhoff
Online Ref | Doping and its efficiency in a-SiOx : H
PHYSICAL REVIEW B 69 11 115206 (2004)
A. Janotta, R. Janssen, M. Schmidt, T. Graf, M. Stutzmann, L. Gorgens, A. Bergmaier, G. Dollinger, C. Hammerl, S. Schreiber, B. Stritzker
Online Ref | Electron injection-induced effects in Mn-doped GaN
JOURNAL OF APPLIED PHYSICS 96 6 3556-3558 (2004)
W. Burdett, O. Lopatiuk, L. Chernyak, M. Hermann, M. Stutzmann, M. Eickhoff
Online Ref | Invited papers presented at the 8th Conference on Optics of Excitons in Confined Systems (OECS-8) - Lecce, Italy, 15-17 September 2003 - Editorial note
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 3 543-543 (2004)
M. Stutzmann, S. Hildebrandt
Online Ref | |
| Light-induced modification of a-SiOx II: Laser crystallization
JOURNAL OF APPLIED PHYSICS 95 8 4060-4068 (2004)
A. Janotta, Y. Dikce, M. Schmidt, C. Eisele, M. Stutzmann, M. Luysberg, L. Houben
Online Ref | Optical and structural characteristics of virtually unstrained bulk-like GaN
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 43 4A 1264-1268 (2004)
D. Gogova, A. Kasic, H. Larsson, B. Pecz, R. Yakimova, B. Magnusson, B. Monemar, F. Tuomisto, K. Saarinen, C. Miskys, M. Stutzmann, C. Bundesmann, M. Schubert
Online Ref | Paramagnetic defects of silicon nanowires
APPLIED PHYSICS LETTERS 85 6 943-945 (2004)
A. Baumer, M. Stutzmann, M. S. Brandt, F. C. K. Au, S. T. Lee
Online Ref | Passivation of Mn acceptors in GaMnAs
APPLIED PHYSICS LETTERS 84 13 2277-2279 (2004)
M. S. Brandt, S. T. B. Goennenwein, T. A. Wassner, F. Kohl, A. Lehner, H. Huebl, T. Graf, M. Stutzmann, A. Koeder, W. Schoch, A. Waag
Online Ref | Proceedings of the Twentieth International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology - Campos do Jordao, Sao Paolo, Brazil August 25-29, 2003 - Foreword
JOURNAL OF NON-CRYSTALLINE SOLIDS 338 VII-VII (2004)
I. Chambouleyron, F. Alvarez, M. Stutzmann, P. C. Taylor, F. C. Marques
Online Ref | Structural and interface properties of an AlN diamond ultraviolet light emitting diode
APPLIED PHYSICS LETTERS 85 17 3699-3701 (2004)
C. R. Miskys, J. A. Garrido, M. Hermann, M. Eickhoff, C. E. Nebel, M. Stutzmann, G. Vogg
Online Ref | Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy
JOURNAL OF APPLIED PHYSICS 95 10 5305-5310 (2004)
M. Herrera, A. Cremades, J. Piqueras, M. Stutzmann, O. Ambacher
Online Ref | AlxGa1-xN - A new material system for biosensors
ADVANCED FUNCTIONAL MATERIALS 13 11 841-846 (2003)
G. Steinhoff, O. Purrucker, M. Tanaka, M. Stutzmann, M. Eickhoff
Online Ref | Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures - Part A: Polarization
phys. stat. sol. (c) 0, 1878-1907 (2003)
O. Ambacher, M. Eickhoff, A. Link, M. Hermann, M. Stutzmann, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, W. Schaff, V. Tilak, L. F. Eastmann | Fabrication of in-plane gate transistors on hydrogenated diamond surfaces
APPLIED PHYSICS LETTERS 82 6 988-990 (2003)
J. A. Garrido, C. E. Nebel, R. Todt, G. Rosel, M. C. Amann, M. Stutzmann, E. Snidero, P. Bergonzo
Online Ref | Fermi level on hydrogen terminated diamond surfaces
APPLIED PHYSICS LETTERS 82 14 2266-2268 (2003)
B. Rezek, C. Sauerer, C. E. Nebel, M. Stutzmann, J. Ristein, L. Ley, E. Snidero, P. Bergonzo
Online Ref | |
| Ferromagnetic resonance in Ga1-xMnxAs
JOURNAL OF SUPERCONDUCTIVITY 16 1 75-78 (2003)
S. T. B. Goennenwein, T. Graf, T. Wassner, M. S. Brandt, M. Stutzmann, A. Koeder, S. Frank, W. Schoch, A. Waag | Growth and characterization of GaN : Mn epitaxial films
JOURNAL OF APPLIED PHYSICS 93 12 9697-9702 (2003)
T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, L. Gorgens, J. B. Philipp, O. Ambacher
Online Ref | Hyperfine interactions at dangling bonds in amorphous germanium
PHYSICAL REVIEW B 68 20 205208 (2003)
T. Graf, T. Ishikawa, K. M. Itoh, E. E. Haller, M. Stutzmann, M. S. Brandt
Online Ref | Influence of surface oxides on hydrogen-sensitive Pd : GaN Schottky diodes
APPLIED PHYSICS LETTERS 83 4 773-775 (2003)
O. Weidemann, M. Hermann, G. Steinhoff, H. Wingbrant, A. L. Spetz, M. Stutzmann, M. Eickhoff
Online Ref | pH response of GaN surfaces and its application for pH-sensitive field-effect transistors
APPLIED PHYSICS LETTERS 83 1 177-179 (2003)
G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann, M. Eickhoff
Online Ref | Photoluminescence of Er3+-implanted amorphous hydrogenated silicon suboxides
PHYSICAL REVIEW B 68 16 165207 (2003)
A. Janotta, M. Schmidt, R. Janssen, M. Stutzmann, C. Buchal
Online Ref | Photoreflectance studies of N- and Ga-face AlGaN/GaN heterostructures confining a polarisation induced 2DEG
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 240 2 380-383 (2003)
A. T. Winzer, R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, U. K. Mishra, J. S. Speck
Online Ref | Scientific misconduct: Past, present, and future...
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 235 1 11-11 (2003)
M. Stutzmann, S. Hildebrandt | Scribing into hydrogenated diamond surfaces using atomic force microscopy
APPLIED PHYSICS LETTERS 82 19 3336-3338 (2003)
B. Rezek, C. Sauerer, J. A. Garrido, C. E. Nebel, M. Stutzmann, E. Snidero, P. Bergonzo
Online Ref | Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films
PHYSICAL REVIEW B 67 16 165215 (2003)
T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, O. Ambacher
Online Ref | Spin wave resonance in Ga1-xMnxAs
APPLIED PHYSICS LETTERS 82 5 730-732 (2003)
S. T. B. Goennenwein, T. Graf, T. Wassner, M. S. Brandt, M. Stutzmann, J. B. Philipp, R. Gross, M. Krieger, K. Zurn, P. Ziemann, A. Koeder, S. Frank, W. Schoch, A. Waag
Online Ref | |
| A new acceptor state in CVD-diamond
DIAMOND AND RELATED MATERIALS 11 3-6 347-350 (2002)
J. A. Garrido, C. E. Nebel, M. Stutzmann, E. Gheeraert, N. Casanova, E. Bustarret, A. Deneuville | Capacitance-voltage studies of Al-Schottky contacts on hydrogen-terminated diamond
APPLIED PHYSICS LETTERS 81 4 637-639 (2002)
J. A. Garrido, C. E. Nebel, M. Stutzmann, E. Snidero, P. Bergonzo
Online Ref | Characterization of sub-micron in-plane devices in H-terminated diamond
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 517-522 (2002)
J. A. Garrido, C. E. Nebel, M. Stutzmann, G. Rosel, R. Todt, M. C. Amann, E. Snidero, P. Bergonzo | Electrical and optical measurements of CVD diamond doped with sulfur
PHYSICAL REVIEW B 65 16 165409 (2002)
J. A. Garrido, C. E. Nebel, M. Stutzmann, E. Gheeraert, N. Casanova, E. Bustarret
Online Ref | Electron spin resonance of phosphorus in n-type diamond
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 434-441 (2002)
T. Graf, M. S. Brandt, C. E. Nebel, M. Stutzmann, S. Koizumi | Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures
SEMICONDUCTORS 36 11 1240-1243 (2002)
E. I. Terukov, O. B. Gusev, O. I. Konkov, Y. K. Undalov, M. Stutzmann, A. Janotta, H. Mell, J. P. Kleider | GaN-based heterostructures for sensor applications
DIAMOND AND RELATED MATERIALS 11 3-6 886-891 (2002)
M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C. E. Nebel, J. Schalwig, R. Neuberger, G. Muller | Hydrogen response mechanism of Pt-GaN Schottky diodes
APPLIED PHYSICS LETTERS 80 7 1222-1224 (2002)
J. Schalwig, G. Muller, U. Karrer, M. Eickhoff, O. Ambacher, M. Stutzmann, L. Gorgens, G. Dollinger
Online Ref | Local oxidation of hydrogenated diamond surfaces for device fabrication
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 523-528 (2002)
B. Rezek, J. A. Garrido, M. Stutzmann, C. E. Nebel, E. Snidero, P. Bergonzo | Low temperature properties of the p-type surface conductivity of diamond
DIAMOND AND RELATED MATERIALS 11 3-6 351-354 (2002)
C. E. Nebel, F. Ertl, C. Sauerer, M. Stutzmann, C. F. O. Graeff, R. Bergonzo, O. A. Williams, R. B. Jackman | Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 234 3 713-716 (2002)
R. Goldhahn, C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M. Stutzmann, Y. Smorchkova, U. K. Mishra, J. S. Speck | |
| Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
J. Phys.: Condens. Matter 14, 3399 (2002)
O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, L. F. Eastman | Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
JOURNAL OF PHYSICS-CONDENSED MATTER 14 13 3399-3434 (2002)
O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, L. F. Eastman | Electrically detected magnetic resonance studies of phosphorus doped diamond
PHYSICA B-CONDENSED MATTER 308 593-597 (2001)
T. Graf, M. S. Brandt, C. E. Nebel, M. Stutzmann, S. Koizumi | Epitaxial alloy films of zintl-phase Ca(Si1-xGex)(2)
JOURNAL OF CRYSTAL GROWTH 223 4 573-576 (2001)
G. Vogg, C. Miesner, M. S. Brandt, M. Stutzmann, G. Abstreiter | g values of effective mass donors in AlxGa1-xN alloys
PHYSICAL REVIEW B 63 16 165204,ISSN 0163-1829 (2001) (2001)
M. W. Bayerl, M. S. Brandt, T. Graf, O. Ambacher, J. A. Majewski, M. Stutzmann, D. J. As, K. Lischka | Generation-recombination noise of DX centers in AlN : Si
APPLIED PHYSICS LETTERS 79 15 2396-2398 (2001)
S. T. B. Goennenwein, R. Zeisel, O. Ambacher, M. S. Brandt, M. Stutzmann, S. Baldovino | Hydrogen-induced transport properties of holes in diamond surface layers
APPLIED PHYSICS LETTERS 79 27 4541-4543 (2001)
C. E. Nebel, C. Sauerer, F. Ertl, M. Stutzmann, C. F. O. Graeff, P. Bergonzo, O. A. Williams, R. Jackman | Low temperature surface conductivity of hydrogenated diamond
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 186 2 241-247 (2001)
C. Sauerer, F. Ertl, C. E. Nebel, M. Stutzmann, P. Bergonzo, O. A. Williams, R. A. Jackman | Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN
PHYSICAL REVIEW B 63 12 art. no.-125203 (2001)
M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, S. Porowski | Playing with polarity
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 505-512 (2001)
M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. L. Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, R. D. Grober | Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
JOURNAL OF APPLIED PHYSICS 90 9 4735-4740 (2001)
G. Martinez-Criado, A. Cros, A. Cantarero, O. Ambacher, C. R. Miskys, R. Dimitrov, M. Stutzmann, J. Smart, J. R. Shealy | |
| Study of structural defects limiting the luminescence of InGaN single quantum wells
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 80 1-3 313-317 (2001)
A. Cremades, J. Piqueras, M. Albrecht, M. Stutzmann, H. P. Strunk | Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 603-606 (2001)
A. Link, T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, J. Speck | Characterization of InGaN thin films using high-resolution x-ray diffraction
Appl. Phys. Lett. 76, 577-579 (2000)
L. Gorgens, O. Ambacher, M. Stutzmann, C. Miskys, F. Scholz, J. Off | Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1-xN films
JOURNAL OF APPLIED PHYSICS 87 5 2357-2362 (2000)
A. Cremades, M. Albrecht, J. Krinke, R. Dimitrov, M. Stutzmann, H. P. Strunk | Epitaxial CaGe2 films on germanium
JOURNAL OF CRYSTAL GROWTH 212 1-2 148-154 (2000)
G. Vogg, M. S. Brandt, M. Stutzmann, I. Genchev, A. Bergmaier, L. Gorgens, G. Dollinger | Fermi level pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5 art. no.-W11.82 (2000)
H. Witte, A. Krtschil, M. Lisker, D. Rudloff, J. Christen, A. Krost, M. Stutzmann, F. Scholz | Persistent photocurrents in CVD diamond
DIAMOND AND RELATED MATERIALS 9 3-6 404-407 (2000)
C. E. Nebel, A. Waltenspiel, M. Stutzmann, M. Paul, L. Schafer | Photoconductivity study of Li doped homoepitaxially grown CVD diamond
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 181 1 45-50 (2000)
R. Zeisel, C. E. Nebel, M. Stutzmann, H. Sternschulte, M. Schreck, B. Stritzker | Spin-dependent processes in amorphous and microcrystalline silicon: a survey
JOURNAL OF NON-CRYSTALLINE SOLIDS 266 1-22 (2000)
M. Stutzmann, M. S. Brandt, M. W. Bayerl | Structural and optical properties of Si-doped GaN
PHYSICAL REVIEW B 61 4 2812-2818 (2000)
A. Cremades, L. Gorgens, O. Ambacher, M. Stutzmann, F. Scholz | Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped AlGaN/GaN HETS
COMPOUND SEMICONDUCTORS 1999 166 493-497 (2000)
O. Ambacher, R. Dimitrov, M. Stutzmann, B. Foutz, M. Murphy, J. Smart, J. R. Shealy, N. G. Weimann, L. F. Eastman | |
| Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 38 9A 4962-4968 (1999)
R. Dimitrov, A. Mitchell, L. Wittmer, O. Ambacher, M. Stutzmann, J. Hilsenbeck, W. Rieger | Composition analysis using elastic recoil detection
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 679-682 (1999)
L. Gorgens, G. Dollinger, A. Bergmaier, O. Ambacher, L. Eastman, J. A. Smart, J. F. Shealy, R. Dimitrov, M. Stutzmann, A. Mitchell | Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range
PHYSICAL REVIEW B 59 3 1845-1849 (1999)
T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, W. Richter, O. Ambacher, M. Stutzmann, M. Cardona | Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 807-811 (1999)
N. Wieser, O. Ambacher, H. Angerer, R. Dimitrov, M. Stutzmann, B. Stritzker, J. K. N. Lindner | Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures
Phys. Rev. B 59, 13242-13250 (1999)
C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. Schäffler | From CaSi2 to siloxene: epitaxial silicide and sheet polymer films on silicon
JOURNAL OF CRYSTAL GROWTH 203 4 570-581 (1999)
G. Vogg, M. S. Brandt, M. Stutzmann, M. Albrecht | Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 4 art. no.-G8.4 (1999)
M. J. Murphy, B. E. Foutz, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger | Photocapacitance study of boron-doped chemical-vapor-deposited diamond
PHYSICAL REVIEW B 60 4 2476-2479 (1999)
R. Zeisel, C. E. Nebel, M. Stutzmann, E. Gheeraert, A. Deneuville | Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon
MONATSHEFTE FUR CHEMIE 130 1 79-87 (1999)
G. Vogg, N. Zamanzadeh-Hanebuth, M. S. Brandt, M. Stutzmann, M. Albrecht | Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 381-389 (1999)
O. Ambacher, R. Dimitrov, M. Stutzmann, B. E. Foutz, M. J. Murphy, J. A. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Chumbes, B. Green, A. J. Sierakowski, W. J. Schaff, L. F. Eastman | Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
JOURNAL OF APPLIED PHYSICS 85 6 3222-3233 (1999)
O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, J. Hilsenbeck | |
| Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 37 3A 745-752 (1998)
O. Ambacher, D. Brunner, R. Dimitrov, M. Stutzmann, A. Sohmer, F. Scholz | Carrier trapping and release in CVD-diamond rims
DIAMOND AND RELATED MATERIALS 7 2-5 556-559 (1998)
C. E. Nebel, M. Stutzmann, F. Lacher, P. Koidl, R. Zachai | Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS 77 4 1013-1025 (1998)
T. Metzger, R. Hopler, E. Born, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster, H. Gobel, S. Christiansen, M. Albrecht, H. P. Strunk | Electrical and structural properties of AlGaN: a comparison with CVD diamond
DIAMOND AND RELATED MATERIALS 7 2-5 123-128 (1998)
M. Stutzmann, O. Ambacher, H. Angerer, C. E. Nebel, E. Rohrer | Electrically detected magnetic resonance of a-Si : H at low magnetic fields: the influence of hydrogen on the dangling bond resonance
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 343-347 (1998)
M. S. Brandt, M. W. Bayerl, M. Stutzmann, C. F. O. Graeff | High-resolution thermal processing of semiconductors using pulsed-laser interference patterning
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 651-657 (1998)
M. K. Kelly, J. Rogg, C. E. Nebel, M. Stutzmann, S. Katai | Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond
DIAMOND AND RELATED MATERIALS 7 6 879-883 (1998)
E. Rohrer, C. E. Nebel, M. Stutzmann, A. Floter, R. Zachai, X. Jiang, C. P. Klages | Quantitative transmission electron microscopy investigation of the relaxation by misfit dislocations confined at the interface of GaN/Al2O3(0001)
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 37 1 84-89 (1998)
S. Kaiser, H. Preis, W. Gebhardt, O. Ambacher, H. Angerer, M. Stutzmann, A. Rosenauer, D. Gerthsen | Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance
PHYSICAL REVIEW B 58 8 4892-4902 (1998)
T. Wimbauer, M. S. Brandt, M. W. Bayerl, N. M. Reinacher, M. Stutzmann, D. M. Hofmann, Y. Mochizuki, M. Mizuta | Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements
APPLIED PHYSICS LETTERS 72 19 2400-2402 (1998)
C. Deger, E. Born, H. Angerer, O. Ambacher, M. Stutzmann, J. Hornsteiner, E. Riha, G. Fischerauer | Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy
JOURNAL OF APPLIED PHYSICS 81 1 234-237 (1997)
C. F. O. Graeff, C. E. Nebel, M. Stutzmann, A. Floter, R. Zachai | |
| Coherent X-ray scattering phenomenon in highly disordered epitaxial AlN films
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 162 2 529-535 (1997)
T. Metzger, R. Hopler, E. Born, S. Christiansen, M. Albrecht, H. P. Strunk, O. Ambacher, M. Stutzmann, R. Stommer, M. Schuster, H. Gobel | Comment on 'Resonantly excited photoluminescence spectra of porous silicon' - Reply
PHYSICAL REVIEW B 55 15 10117-10118 (1997)
M. Rosenbauer, M. Stutzmann, S. Finkbeiner, J. Weber, E. Bustarret | Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films
APPLIED PHYSICS LETTERS 71 11 1504-1506 (1997)
H. Angerer, D. Brunner, F. Freudenberg, O. Ambacher, M. Stutzmann, R. Hopler, T. Metzger, E. Born, G. Dollinger, A. Bergmaier, S. Karsch, H. J. Korner | Electronic properties of CVD and synthetic diamond
PHYSICAL REVIEW B 55 15 9786-9791 (1997)
C. E. Nebel, J. Munz, M. Stutzmann, R. Zachai, H. Guttler | Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 1309-1314 (1997)
T. Wimbauer, M. S. Brandt, M. W. Bayerl, M. Stutzmann, D. M. Hofmann, Y. Mochizuki, M. Mizuta | Influence of magnesium doping on the structural properties of GaN layers
JOURNAL OF CRYSTAL GROWTH 181 3 197-203 (1997)
A. Cros, R. Dimitrov, H. Angerer, O. Ambacher, M. Stutzmann, S. Christiansen, M. Albrecht, H. P. Strunk | Properties and applications of MBE grown AlGaN
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 50 1-3 212-218 (1997)
M. Stutzmann, O. Ambacher, A. Cros, M. S. Brandt, H. Angerer, R. Dimitrov, N. Reinacher, T. Metzger, R. Hopler, D. Brunner, F. Freudenberg, R. Handschuh, C. Deger | Raman spectra of isotopic GaN
PHYSICAL REVIEW B 56 22 14399-14406 (1997)
J. M. Zhang, T. Ruf, M. Cardona, O. Ambacher, M. Stutzmann, J. M. Wagner, F. Bechstedt | Raman study of the optical phonons in AlxGa1-xN alloys
SOLID STATE COMMUNICATIONS 104 1 35-39 (1997)
A. Cros, H. Angerer, O. Ambacher, M. Stutzmann, R. Hopler, T. Metzger | Sub-bandgap spectroscopy of chemical vapor deposition diamond
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 46 1-3 115-118 (1997)
E. Rohrer, C. F. O. Graeff, C. E. Nebel, M. Stutzmann, H. Guttler, R. Zachai | Electrically detected magnetic resonance in a-Si:H/a-Ge:H multilayers
JOURNAL OF APPLIED PHYSICS 79 12 9166-9171 (1996)
C. F. O. Graeff, M. Stutzmann, S. Miyazaki | |
| Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings
APPLIED PHYSICS LETTERS 68 14 1984-1986 (1996)
M. K. Kelly, C. E. Nebel, M. Stutzmann, G. Bohm | Nitrogen-related dopant and defect states in CVD diamond
PHYSICAL REVIEW B 54 11 7874-7880 (1996)
E. Rohrer, C. F. O. Graeff, R. Janssen, C. E. Nebel, M. Stutzmann, H. Guttler, R. Zachai | Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond
APPLIED PHYSICS LETTERS 69 21 3215-3217 (1996)
C. F. O. Graeff, E. Rohrer, C. E. Nebel, M. Stutzmann, H. Guttler, R. Zachai | Spin-dependent transport in amorphous silicon thin-film transistors
JOURNAL OF NON-CRYSTALLINE SOLIDS 200 1117-1120 (1996)
C. F. O. Graeff, G. Kawachi, M. S. Brandt, M. Stutzmann, M. J. Powell | The sign of the Hall effect in hydrogenated amorphous and disordered crystalline silicon
PHILOSOPHICAL MAGAZINE LETTERS 74 6 455-463 (1996)
C. E. Nebel, M. Rother, M. Stutzmann, C. Summonte, M. Heintze | Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
JOURNAL OF VACUUM SCIENCE and TECHNOLOGY B 14 6 3532-3542 (1996)
O. Ambacher, M. S. Brandt, R. Dimitrov, T. Metzger, M. Stutzmann, R. A. Fischer, A. Miehr, A. Bergmaier, G. Dollinger | X-ray diffraction study of gallium nitride grown by MOCVD
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 193 2 391-397 (1996)
T. Metzger, H. Angerer, O. Ambacher, M. Stutzmann, E. Born | ASYNCHRONOUS TRANSFER MODE
COMMUTATION and TRANSMISSION 17 45-58 (1995)
H. SEGUIN, M. LEMONIER, M. STUTZMANN, P. GRAFF, D. HERZ | CORRELATION BETWEEN THE LUMINESCENCE AND RAMAN PEAKS IN QUANTUM-CONFINED SYSTEMS
THIN SOLID FILMS 255 1-2 241-245 (1995)
P. DEAK, Z. HAJNAL, M. STUTZMANN, H. D. FUCHS | DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
PHYSICAL REVIEW B 52 7 4680-4683 (1995)
C. F. O. GRAEFF, M. S. BRANDT, M. STUTZMANN, M. J. POWELL | RADIATIVE AND NONRADIATIVE RECOMBINATION IN POROUS SILICON - WHAT CAN WE LEARN FROM SPIN-RESONANCE
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 97-106 (1995)
M. STUTZMANN, M. S. BRANDT | |
| STRUCTURAL AND LUMINESCENCE STUDIES OF STAIN-ETCHED AND ELECTROCHEMICALLY ETCHED GERMANIUM
THIN SOLID FILMS 255 1-2 282-285 (1995)
M. SENDOVAVASSILEVA, N. TZENOV, D. DIMOVAMALINOVSKA, M. ROSENBAUER, M. STUTZMANN, K. V. JOSEPOVITS | EFFECTS OF PRESSURE ON THE OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE OF WOHLER SILOXENE
PHYSICAL REVIEW B 49 8 5362-5367 (1994)
S. ERNST, M. ROSENBAUER, U. SCHWARZ, P. DEAK, K. SYASSEN, M. STUTZMANN, M. CARDONA | EFFECTS OF THERMAL ANNEALING ON THE OPTOELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS-GERMANIUM
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 69 2 387-396 (1994)
C. F. O. GRAEFF, M. STUTZMANN, K. EBERHARDT | PULSED-LIGHT SOAKING OF HYDROGENATED AMORPHOUS-SILICON
PHYSICAL REVIEW B 50 16 11592-11605 (1994)
M. STUTZMANN, M. C. ROSSI, M. S. BRANDT | SPECIAL ISSUE - CARDONA,MANUEL - A COLLECTION OF PAPERS TO CELEBRATE HIS 60TH BIRTHDAY - PREFACE
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 70 3 311-311 (1994)
J. ZEGENHAGEN, C. THOMSEN, M. STUTZMANN, K. SYASSEN | SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON-GERMANIUM ALLOYS
PHYSICAL REVIEW B 49 16 11028-11034 (1994)
C. F. O. GRAEFF, M. STUTZMANN, M. S. BRANDT | ELECTRONIC AND STRUCTURAL-PROPERTIES OF POROUS SILICON
JOURNAL OF NON-CRYSTALLINE SOLIDS 166 931-936 (1993)
M. STUTZMANN, M. S. BRANDT, E. BUSTARRET, H. D. FUCHS, M. ROSENBAUER, A. HOPNER, J. WEBER | LIGHT-SCATTERING BY ACOUSTIC PHONONS IN UNHYDROGENATED AND HYDROGENATED AMORPHOUS-SILICON
JOURNAL OF NON-CRYSTALLINE SOLIDS 166 927-930 (1993)
E. BUSTARRET, C. THOMSEN, M. STUTZMANN, A. ASANO, C. SUMMONTE | LUMINESCENCE AND OPTICAL-PROPERTIES OF SILOXENE
JOURNAL OF LUMINESCENCE 57 1-6 321-330 (1993)
M. STUTZMANN, M. S. BRANDT, M. ROSENBAUER, H. D. FUCHS, S. FINKBEINER, J. WEBER, P. DEAK | MICROSCOPIC ORIGIN AND ENERGY-LEVELS OF THE STATES PRODUCED IN A-SI-H BY PHOSPHORUS DOPING
PHYSICAL REVIEW B 47 20 13283-13294 (1993)
J. KOCKA, J. STUCHLIK, M. STUTZMANN, L. CHEN, J. TAUC | POROUS SILICON AND SILOXENE - VIBRATIONAL AND STRUCTURAL-PROPERTIES
PHYSICAL REVIEW B 48 11 8172-8183 (1993)
H. D. FUCHS, M. STUTZMANN, M. S. BRANDT, M. ROSENBAUER, J. WEBER, A. BREITSCHWERDT, P. DEAK, M. CARDONA | |
| SPIN-DEPENDENT TRANSPORT IN AMORPHOUS-SILICON NIN-STRUCTURES
JOURNAL OF NON-CRYSTALLINE SOLIDS 166 693-696 (1993)
M. S. BRANDT, M. STUTZMANN, J. KOCKA | TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN POROUS SILICON AND RELATED MATERIALS
JOURNAL OF LUMINESCENCE 57 1-6 153-157 (1993)
M. ROSENBAUER, M. STUTZMANN, H. D. FUCHS, S. FINKBEINER, J. WEBER | EXCITONIC STATES IN HYDROGENATED AMORPHOUS-SILICON
JOURNAL OF NON-CRYSTALLINE SOLIDS 141 1-3 97-105 (1992)
M. STUTZMANN, M. S. BRANDT | NEW GROWTH TECHNIQUE FOR LUMINESCENT LAYERS ON SILICON
APPLIED PHYSICS A-MATERIALS SCIENCE and PROCESSING 54 6 567-569 (1992)
M. S. BRANDT, A. BREITSCHWERDT, H. D. FUCHS, A. HOPNER, M. ROSENBAUER, M. STUTZMANN, J. WEBER | SILOXENE - CHEMICAL QUANTUM CONFINEMENT DUE TO OXYGEN IN A SILICON MATRIX
PHYSICAL REVIEW LETTERS 69 17 2531-2534 (1992)
P. DEAK, M. ROSENBAUER, M. STUTZMANN, J. WEBER, M. S. BRANDT | THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION
SOLID STATE COMMUNICATIONS 81 4 307-312 (1992)
M. S. BRANDT, H. D. FUCHS, M. STUTZMANN, J. WEBER, M. CARDONA | VISIBLE LUMINESCENCE FROM POROUS SILICON AND SILOXENE
PHYSICA SCRIPTA T45 309-313 (1992)
H. D. FUCHS, M. STUTZMANN, M. S. BRANDT, M. ROSENBAUER, J. WEBER, M. CARDONA | VISIBLE LUMINESCENCE FROM SILICON
FESTKORPERPROBLEME - ADVANCES IN SOLID STATE PHYSICS 32 32 179-197 (1992)
M. STUTZMANN, J. WEBER, M. S. BRANDT, H. D. FUCHS, M. ROSENBAUER, P. DEAK, A. HOPNER, A. BREITSCHWERDT | A COMPARISON OF HYDROGEN INCORPORATION AND EFFUSION IN DOPED CRYSTALLINE SILICON, GERMANIUM, AND GALLIUM-ARSENIDE
APPLIED PHYSICS A-MATERIALS SCIENCE and PROCESSING 53 1 47-53 (1991)
M. STUTZMANN, J. B. CHEVRIER, C. P. HERRERO, A. BREITSCHWERDT | ACCELERATED METASTABLE DEFECT CREATION IN A-SI-H BY SHORT LIGHT-PULSES
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 231-234 (1991)
M. STUTZMANN, J. NUNNENKAMP, M. S. BRANDT, A. ASANO, M. C. ROSSI | BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON
PHYSICAL REVIEW B 43 2 1555-1575 (1991)
C. P. HERRERO, M. STUTZMANN, A. BREITSCHWERDT | |
| COMPOSITIONAL DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA IN HYDROGENATED AMORPHOUS SILICON-SULFUR ALLOYS
JOURNAL OF LUMINESCENCE 48-9 641-644 (1991)
T. MUSCHIK, R. SCHWARZ, M. HAMMAM, S. M. ALALAWI, S. ALDALLAL, S. ALJISHI, M. STUTZMANN, S. JIN | ELECTRONIC LEVELS OF PHOSPHORUS DONORS IN A-SI-H
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 379-382 (1991)
J. KOCKA, J. STUCHLIK, M. STUTZMANN, L. CHEN, J. TAUC | ELECTRONIC-PROPERTIES OF A-SI,S-H AND A-SI,SE-H ALLOYS
SOLAR ENERGY MATERIALS 23 2-4 334-339 (1991)
S. ALJISHI, S. ALDALLAL, S. M. ALALAWI, M. HAMMAM, H. S. ALALAWI, M. STUTZMANN, S. JIN, T. MUSCHIK, R. SCHWARZ | EXPLOSIVE ISOTHERMAL HYDROGEN EXODIFFUSION IN VHF-GD A-SI-H THICK LAYERS
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 53-56 (1991)
E. BUSTARRET, M. BRANDT, M. STUTZMANN, M. FAVRE | FAST METASTABLE-DEFECT CREATION IN AMORPHOUS-SILICON BY FEMTOSECOND LIGHT-PULSES
PHYSICAL REVIEW LETTERS 67 17 2347-2350 (1991)
M. STUTZMANN, J. NUNNENKAMP, M. S. BRANDT, A. ASANO | HIGH BAND-GAP HYDROGENATED AMORPHOUS SILICON-SELENIUM ALLOYS
JOURNAL OF APPLIED PHYSICS 70 9 4926-4930 (1991)
S. ALDALLAL, S. ALIISHI, M. HAMMAM, S. M. ALALAWI, M. STUTZMANN, S. JIN, T. MUSCHIK, R. SCHWARZ | MOLYBDENUM IMPURITY STATES IN AMORPHOUS-SILICON AND RELATED MATERIALS
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 63 1 151-162 (1991)
M. STUTZMANN, J. STUKE | STATES OF HYDROGEN IN CRYSTALLINE SILICON
PHYSICA B 170 1-4 240-244 (1991)
M. STUTZMANN, W. BEYER, L. TAPFER, C. P. HERRERO | STRUCTURAL-PROPERTIES OF LI-DOPED HYDROGENATED AMORPHOUS-SILICON
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 107-110 (1991)
K. PIERZ, M. STUTZMANN, S. ZOLLNER, W. BEYER, C. BRILLERTY | DEUTERIUM EFFUSION MEASUREMENTS IN DOPED CRYSTALLINE SILICON
JOURNAL OF APPLIED PHYSICS 68 3 1406-1409 (1990)
M. STUTZMANN, M. S. BRANDT | ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS
JOURNAL OF APPLIED PHYSICS 68 4 1726-1734 (1990)
C. A. DIMITRIADIS, J. H. WERNER, S. LOGOTHETIDIS, M. STUTZMANN, J. WEBER, R. NESPER | |
| DEFECT DENSITY AND STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-SULFUR ALLOYS
JOURNAL OF NON-CRYSTALLINE SOLIDS 114 462-464 (1989)
S. ALJISHI, M. STUTZMANN, S. JIN, C. HERRERO, S. ALDALLAL, M. HAMMAM, S. M. ALALAWI | HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS IN SILICON
PHYSICA SCRIPTA T25 276-282 (1989)
M. STUTZMANN, C. P. HERRERO | MICROSCOPIC NATURE OF COORDINATION DEFECTS IN AMORPHOUS-SILICON
PHYSICAL REVIEW B 40 14 9834-9840 (1989)
M. STUTZMANN, D. K. BIEGELSEN | NMR INVESTIGATION OF HYDROGEN IN AMORPHOUS-SILICON AND RELATED MATERIALS
JOURNAL OF NON-CRYSTALLINE SOLIDS 114 211-216 (1989)
J. B. BOYCE, S. E. READY, M. STUTZMANN, R. E. NORBERG | STRUCTURAL, OPTICAL, AND SPIN PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS
JOURNAL OF APPLIED PHYSICS 66 2 569-592 (1989)
M. STUTZMANN, R. A. STREET, C. C. TSAI, J. B. BOYCE, S. E. READY | DANGLING OR FLOATING BONDS IN AMORPHOUS-SILICON
PHYSICAL REVIEW LETTERS 60 16 1682-1682 (1988)
M. STUTZMANN, D. K. BIEGELSEN | LATTICE-RELAXATION DUE TO HYDROGEN PASSIVATION IN BORON-DOPED SILICON
APPLIED PHYSICS LETTERS 52 20 1667-1669 (1988)
M. STUTZMANN, J. HARSANYI, A. BREITSCHWERDT, C. P. HERRERO | NEW RAMAN LINES IN CDF2 IRRADIATED WITH HYDROGEN AND DEUTERIUM
ACTA PHYSICA POLONICA A 73 3 377-379 (1988)
P. CIEPIELEWSKI, M. STUTZMANN, J. TATARKIEWICZ | DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM
PHYSICAL REVIEW B 35 11 5666-5701 (1987)
M. STUTZMANN, D. K. BIEGELSEN, R. A. STREET | EFFECTS OF DOPANT AND IMPURITY INCORPORATION ON METASTABLE LIGHT-INDUCED DEFECT FORMATION
SOLAR CELLS 21 431-438 (1987)
W. B. JACKSON, M. STUTZMANN, C. C. TSAI | ELECTRONIC STATES IN THE GAP OF AMORPHOUS SILICON-GERMANIUM ALLOYS
JOURNAL OF NON-CRYSTALLINE SOLIDS 97-8 1011-1014 (1987)
M. STUTZMANN, C. C. TSAI, R. A. STREET | |
| OCCUPANCY OF DANGLING BOND DEFECTS IN DOPED HYDROGENATED AMORPHOUS-SILICON
SOLID STATE COMMUNICATIONS 62 3 153-157 (1987)
M. STUTZMANN, W. B. JACKSON | RAMAN-SCATTERING OF HYDROGEN-IMPLANTED AND DEUTERIUM-IMPLANTED CADMIUM FLUORIDE
JOURNAL OF APPLIED PHYSICS 62 9 3922-3924 (1987)
M. STUTZMANN, J. TATARKIEWICZ | TEMPERATURE-DEPENDENCE OF HYDROGEN VIBRATIONAL-MODES IN PASSIVATED BORON-DOPED SILICON
APPLIED PHYSICS LETTERS 51 18 1413-1415 (1987)
M. STUTZMANN, C. P. HERRERO | THE ROLE OF DANGLING BONDS IN THE TRANSPORT AND RECOMBINATION OF A-SI-GE-H ALLOYS
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 56 3 289-303 (1987)
R. A. STREET, C. C. TSAI, M. STUTZMANN, J. KAKALIOS | ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
PHYSICAL REVIEW B 34 1 63-72 (1986)
M. STUTZMANN, W. B. JACKSON, C. C. TSAI | ELECTRON-NUCLEAR DOUBLE-RESONANCE EXPERIMENTS IN HYDROGENATED AMORPHOUS-SILICON
PHYSICAL REVIEW B 34 5 3093-3107 (1986)
M. STUTZMANN, D. K. BIEGELSEN | ELECTRON-SPIN-RESONANCE-TRANSIENT SPECTROSCOPY
PHYSICAL REVIEW B 34 1 54-62 (1986)
W. B. JACKSON, M. STUTZMANN, C. C. TSAI | LIGHT-INDUCED METASTABLE DEFECTS IN AMORPHOUS-SILICON - THE ROLE OF HYDROGEN
APPLIED PHYSICS LETTERS 48 1 62-64 (1986)
M. STUTZMANN, W. B. JACKSON, A. J. SMITH, R. THOMPSON | 2-LEVEL SYSTEMS IN HYDROGENATED AMORPHOUS-SILICON - NMR-STUDIES
PHYSICAL REVIEW B 32 9 6062-6065 (1985)
J. B. BOYCE, M. STUTZMANN, S. E. READY | DONOR STATES IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM
PHYSICAL REVIEW LETTERS 54 16 1836-1839 (1985)
M. STUTZMANN, R. A. STREET | DOPANT STATES AND RECOMBINATION IN COMPENSATED A-SI-H
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 647-650 (1985)
M. STUTZMANN, D. K. BIEGELSEN, R. A. STREET | |
| INTERFACE EFFECTS IN AMORPHOUS-SILICON NITRIDE MULTILAYERS
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 995-998 (1985)
C. C. TSAI, M. J. THOMPSON, R. A. STREET, M. STUTZMANN, F. PONCE | LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 363-372 (1985)
M. STUTZMANN, W. B. JACKSON, C. C. TSAI | LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY
PHYSICAL REVIEW B 32 1 23-47 (1985)
M. STUTZMANN, W. B. JACKSON, C. C. TSAI | MOLECULAR-HYDROGEN IN AMORPHOUS SI-NMR STUDIES
JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 265-268 (1985)
J. B. BOYCE, M. STUTZMANN, S. E. READY | NATIVE DEFECTS AT THE SI/SIO2 INTERFACE - AMORPHOUS-SILICON REVISITED
APPLIED SURFACE SCIENCE 22-3 MAY 879-890 (1985)
D. K. BIEGELSEN, N. M. JOHNSON, M. STUTZMANN, E. H. POINDEXTER, P. J. CAPLAN | THE ABSENCE OF THE STAEBLER-WRONSKI EFFECT IN FLUORINATED AMORPHOUS-SILICON
SOLAR CELLS 14 2 191-192 (1985)
M. JANAI, M. STUTZMANN, R. WEIL | ELECTRON-SPIN-RESONANCE STUDY OF BORON-DOPED AMORPHOUS SIXGE1-X - H-ALLOYS
PHYSICAL REVIEW B 30 7 3595-3602 (1984)
M. STUTZMANN, R. J. NEMANICH, J. STUKE | KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON
APPLIED PHYSICS LETTERS 45 10 1075-1077 (1984)
M. STUTZMANN, W. B. JACKSON, C. C. TSAI | NEW PARAMAGNETIC STATES IN AMORPHOUS-SILICON AND GERMANIUM
JOURNAL OF NON-CRYSTALLINE SOLIDS 66 1-2 145-150 (1984)
M. STUTZMANN, J. STUKE | THE KINETICS OF FORMATION AND ANNEALING OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
AIP CONFERENCE PROCEEDINGS 120 213-220 (1984)
M. Stutzmann, W. B. Jackson, C. C. Tsai | THE STAEBLER-WRONSKI EFFECT IN UNDOPED A-SI-H - ITS INTRINSIC NATURE AND THE INFLUENCE OF IMPURITIES
AIP CONFERENCE PROCEEDINGS 120 242-249 (1984)
C. C. TSAI, M. STUTZMANN, W. B. JACKSON | |
| ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-GERMANIUM
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 115 1 141-151 (1983)
M. Stutzmann, J. Stuke, H. Dersch | ELECTRON-SPIN-LATTICE RELAXATION IN AMORPHOUS-SILICON AND GERMANIUM
PHYSICAL REVIEW B 28 11 6256-6261 (1983)
M. Stutzmann, D. K. Biegelsen | PARAMAGNETIC STATES IN DOPED AMORPHOUS-SILICON AND GERMANIUM
SOLID STATE COMMUNICATIONS 47 8 635-639 (1983)
M. Stutzmann, J. Stuke | TEMPERATURE-DEPENDENCE OF ELECTRON-SPIN-RESONANCE SPECTRA OF DOPED AMORPHOUS-GERMANIUM
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 120 1 225-234 (1983)
M. Stutzmann, J. Stuke | ELECTRONIC-PROPERTIES OF DOPED GLOW-DISCHARGE AMORPHOUS-GERMANIUM
SOLAR ENERGY MATERIALS 8 1-3 319-330 (1982)
D. Hauschildt, M. Stutzmann, J. Stuke, H. Dersch |
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