Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


Max Kraut

Max Kraut


Room S106
Tel.: (+49) 089 289 11356


Publications

A systematic investigation of radiative recombination in GaN nanowires: The influence of nanowire geometry and environmental conditions
J. Appl. Phys. 124, 035704 (2018)
M. Hetzl, M. Kraut, T. Hoffmann, J. Winnerl, K. Boos, A. Zeidler, I.D. Sharp, M. Stutzmann
Online Ref
Polarity Control of Heteroepitaxial GaN Nanowires on Diamond
Nano Lett. 17, 3582-3590 (2017)
M. Hetzl, M. Kraut, T. Hoffmann, M. Stutzmann
Online Ref
Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires
Nanoscale 9, 7179-7188 (2017)
M. Hetzl, J. Winnerl, L. Francaviglia, M. Kraut, M. Doblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann
Online Ref
Strain-Induced Band Gap Engineering in Selectively Grown GaN–(Al,Ga)N Core–Shell Nanowire Heterostructures
Nano Lett. 16, 7098 (2016)
M. Hetzl, M. Kraut, J. Winnerl, L. Francaviglia, M. Döblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann
Online Ref





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