Metastable Ta2N3 with Highly Tunable Electrical Conductivity via Oxygen Incorporation Materials Horizons 8, 1744 (2021) C.-M. Jiang, L.I. Wagner, M.K. Horton, J. Eichhorn, T. Rieth, V.F. Kunzelmann, M. Kraut, Y. Li, K.A. Persson, I.D. Sharp Online Ref
Control of Band Gap and Band Edge Positions in Gallium–Zinc Oxynitride Grown by Molecular Beam Epitaxy J. Phys. Chem. C 124, 7668 (2020) M. Kraut, E. Sirotti, F. Pantle, C.-M. Jiang, G. Grötzner, M. Koch, L.I. Wagner, I.D. Sharp, M. Stutzmann Online Ref
Photo-induced selective etching of GaN nanowires in water Nanoscale 11, 7967 (2019) M. Kraut, F. Pantle, J. Winnerl, M. Hetzl, F. Eckmann, I.D. Sharp, M. Stutzmann Online Ref
GaN Nanowire Arrays for Efficient Optical Read-Out and Optoelectronic Control of NV Centers in Diamond Nano Letters 18, 3651–3660 (2018) M. Hetzl, J. Wierzbowski, T. Hoffmann, M. Kraut, V. Zuerbig, C. E. Nebel, K. Mueller, J. J. Finley, M. Stutzmann Online Ref
A systematic investigation of radiative recombination in GaN nanowires: The influence of nanowire geometry and environmental conditions J. Appl. Phys. 124, 035704 (2018) M. Hetzl, M. Kraut, T. Hoffmann, J. Winnerl, K. Boos, A. Zeidler, I.D. Sharp, M. Stutzmann Online Ref
Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires Nanoscale 9, 7179-7188 (2017) M. Hetzl, J. Winnerl, L. Francaviglia, M. Kraut, M. Doblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann Online Ref
Strain-Induced Band Gap Engineering in Selectively Grown GaN–(Al,Ga)N Core–Shell Nanowire Heterostructures Nano Lett. 16, 7098 (2016) M. Hetzl, M. Kraut, J. Winnerl, L. Francaviglia, M. Döblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann Online Ref
Walter Schottky Institut