Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


Max Kraut

Max Kraut


Room S106
Tel.: (+49) 089 289 11356


Publications

Metastable Ta2N3 with Highly Tunable Electrical Conductivity via Oxygen Incorporation
Materials Horizons 8, 1744 (2021)
C.-M. Jiang, L.I. Wagner, M.K. Horton, J. Eichhorn, T. Rieth, V.F. Kunzelmann, M. Kraut, Y. Li, K.A. Persson, I.D. Sharp
Online Ref
Control of Band Gap and Band Edge Positions in Gallium–Zinc Oxynitride Grown by Molecular Beam Epitaxy
J. Phys. Chem. C 124, 7668 (2020)
M. Kraut, E. Sirotti, F. Pantle, C.-M. Jiang, G. Grötzner, M. Koch, L.I. Wagner, I.D. Sharp, M. Stutzmann
Online Ref
Photo-induced selective etching of GaN nanowires in water
Nanoscale 11, 7967 (2019)
M. Kraut, F. Pantle, J. Winnerl, M. Hetzl, F. Eckmann, I.D. Sharp, M. Stutzmann
Online Ref
GaN Nanowire Arrays for Efficient Optical Read-Out and Optoelectronic Control of NV Centers in Diamond
Nano Letters 18, 3651–3660 (2018)
M. Hetzl, J. Wierzbowski, T. Hoffmann, M. Kraut, V. Zuerbig, C. E. Nebel, K. Mueller, J. J. Finley, M. Stutzmann
Online Ref
A systematic investigation of radiative recombination in GaN nanowires: The influence of nanowire geometry and environmental conditions
J. Appl. Phys. 124, 035704 (2018)
M. Hetzl, M. Kraut, T. Hoffmann, J. Winnerl, K. Boos, A. Zeidler, I.D. Sharp, M. Stutzmann
Online Ref
Polarity Control of Heteroepitaxial GaN Nanowires on Diamond
Nano Lett. 17, 3582-3590 (2017)
M. Hetzl, M. Kraut, T. Hoffmann, M. Stutzmann
Online Ref
Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires
Nanoscale 9, 7179-7188 (2017)
M. Hetzl, J. Winnerl, L. Francaviglia, M. Kraut, M. Doblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann
Online Ref
Strain-Induced Band Gap Engineering in Selectively Grown GaN–(Al,Ga)N Core–Shell Nanowire Heterostructures
Nano Lett. 16, 7098 (2016)
M. Hetzl, M. Kraut, J. Winnerl, L. Francaviglia, M. Döblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann
Online Ref



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