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Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN Advanced Functional Materials 31, 2101441 (2021) A. Henning, J.D. Bartl, A. Zeidler, S. Qian, O. Bienek, C.-M. Jiang, C. Paulus, B. Rieger, M. Stutzmann, I.D. Sharp Online Ref
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A systematic investigation of radiative recombination in GaN nanowires: The influence of nanowire geometry and environmental conditions J. Appl. Phys. 124, 035704 (2018) M. Hetzl, M. Kraut, T. Hoffmann, J. Winnerl, K. Boos, A. Zeidler, I.D. Sharp, M. Stutzmann Online Ref
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