Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


PD Dr. Gregor Koblmueller

PD Dr. Gregor Koblmueller
Sub-Group Leader

Room S315
Tel.: (+49) 089 289 12779


Publications

Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples
J. Appl. Phys. 125, accepted (2019)
M. Baj, L. H. Dmowski, A. Kwiatkowski, J. Przybytek, X. Wang, G. Koblmueller, C. S. Gallinat, J. S. Speck
Optimized waveguide coupling of an integrated III-V nanowire laser on silicon
J. Appl. Phys. 125, 243102 (2019)
J. Bissinger, D. Ruhstorfer, T. Stettner, G. Koblmueller, J. J. Finley
Online Ref
The one-step transfer printing of patterned nanogap electrodes
J. Vac. Sci. Technol. B 37, 040602 (2019)
K. Saller, H. Riedl, P. Lugli, G. Koblmueller, M. Tornow
Online Ref
Break-down of corner states and carrier localization by monolayer fluctuations in radial nanowire quantum wells
Nano Letters 19, 3336 (2019)
M. M. Sonner, A. Sitek, L. Janker, D. Rudolph, D. Ruhstorfer, M. Döblinger, A. Manolescu, G. Abstreiter, J. J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner
Online Ref
Contactless optical characterization of carrier dynamics in free-standing InAs-InAlAs core-shell nanowires on silicon
Nano Letters 19, 990 (2019)
X. Li, K. Zhang, J. Treu, L. Stampfer, G. Koblmueller, F. Toor, J. Prineas
Online Ref
Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films
Nature Materials 18, 136 (2019)
B. Sun, G. Haunschild, C. Polanco, J. Ju, L. Lindsay, G. Koblmueller, Y. K. Koh
Online Ref
Nanowire laser structure and fabrication method
US Patent, App. 15/759,977 (2018)
B. Mayer, G. Koblmueller, J. Finley, J. Klicpera, G. Abstreiter
Online Ref
A method for fabricating a nanostructure
US Patent, App. 15/759,986 (2018)
G. Koblmueller, B. Mayer, J. Finley, G. Abstreiter
Online Ref
Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core–Multishell Nanowires
Nano Letters 18, 6292 (2018)
T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, P. Schmiedeke, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, G. Koblmueller
Online Ref
Connecting composition-driven faceting with facet-driven composition modulation in GaAs-AlGaAs core-shell nanowires
Nano Letters 18, 5179 (2018)
N. Jeon, D. Ruhstorfer, M. Döblinger, S. Matich, B. Loitsch, G. Koblmueller, L. J. Lauhon
Online Ref
Noise insights into electronic transport
JTEP Letters, 1-14 (2018)
S.U. Piatrusha, L.V. Ginzburg, E.S. Tikhonov, D.V. Shovkun, G. Koblmueller, A.V. Bubis, A.K. Grebenko, A.G. Nasibulin, V.S. Khrapai
Online Ref
Helium ion microscopy as a high-resolution probe for complex quantum heterostructures in core-shell nanowires
Nano Letters 18, 3911 (2018)
C. Pöpsel, J. Becker, N. Jeon, M. Döblinger, T. Stettner, Y. Trujillo Gottschalk, B. Loitsch, S. Matich, M. Altzschner, A.W. Holleitner, J. Finley, L.J. Lauhon, G. Koblmueller
Online Ref
Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires
Phys. Rev. B 97, 115306 (2018)
J. Becker, S. Morkoetter, J. Treu, M. Sonner, M. Speckbacher, M. Doeblinger, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref
Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires
Appl. Phys. Lett. 112, 091904 (2018)
M. Sonner, J. Treu, K. Saller, H. Riedl, J. J. Finley, G. Koblmueller
Online Ref
Correlated chemical and electrically active dopant analysis in catalyst-free Si-doped InAs nanowires
ACS Nano 12, 1603 (2018)
J. Becker, M. O. Hill, M. Sonner, J. Treu, M. Döblinger, A. Hirler, H. Riedl, J. Finley, L. J. Lauhon, G. Koblmueller
Online Ref
Measuring three-dimensional strain and structural defects in a single InGaAs nanowire using coherent x-ray multiangle Bragg projection ptychography
Nano Letters 18, 811 (2018)
M. O. Hill, I. Calvo-Almazan, M. Allain, M. Holt, A. Ulvestad, J. Treu, G. Koblmueller, C. Huang, X. Huang, H. Yan, E. Nazarestski, Y. S. Chu, G. B. Stephenson, V. Chamard, L. Lauhon, O. Hruszkewycz
Online Ref
Quantum transport and sub-band structure of modulation-doped GaAs/AlAs core–superlattice nanowires
Nano Letters 17, 4886 (2017)
D. M. Irber, J. Seidl, D. J. Carrad, J. Becker, N. Jeon, B. Loitsch, J. Winnerl, S. Matich, M. Doeblinger, Y. Tang, S. Morkoetter, G. Abstreiter, J. J. Finley, M. Grayson, L. J. Lauhon, G. Koblmueller
Online Ref
Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions
Semicond. Sci. Technol. 32, 094007 (2017)
A. V. Bubis, A. O. Denisov, S. U. Piatrusha, I. E. Batov, V. S. Khrapai, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller
Online Ref
Direct coupling of coherent emission from site-selectively grown III-V nanowire lasers into proximal silicon waveguides
ACS Photonics 4, 2537 (2017)
T. Stettner, T. Kostenbader, D. Ruhstorfer, J. Bissinger, H. Riedl, M. Kaniber, G. Koblmueller, J. Finley
Online Ref
Enhanced THz emission efficiency of composition-tunable InGaAs nanowire arrays
Appl. Phys. Lett. 110, 201106 (2017)
I. Beleckaite, J. Treu, S. Morkötter, M. Doeblinger, X. Xu, R. Adomavicius, J. Finley, G. Koblmueller, A. Krotkus
Online Ref
GaAs-AlGaAs core-shell nanowire lasers on silicon: Invited Review
Semicond. Sci. Techol. Topical Review (2017)
G. Koblmueller, B. Mayer, T. Stettner, G. Abstreiter, J. Finley
Online Ref
Long-term mutual phase locking of picosecond pulse pairs generated by a semiconductor nanowire laser
Nature Comm. 8, 15521 (2017)
B. Mayer, A. Regler, S. Sterzl, T. Stettner, G. Koblmueller, M. Kaniber, B. Lingnau, K. Luedge, J. Finley
Online Ref
Nanometer-scale resolved cathodoluminescence imaging: New insights into GaAs/AlGaAs core-shell nanowire lasers
Microscopy and Microanalysis 23, 1470 (2017)
M. Mueller, P. Veit, B. Loitsch, J. Winnerl, S. Matich, F. Bertram, G. Koblmueller, J. Finley, J. Christen
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
Appl. Phys. Lett. 108, 053110 (2016)
J. Treu, M. Speckbacher, K. Saller, S. Morkoetter, M. Doeblinger, X. Xu, H. Riedl, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref
Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices
AIP Advances 6, 045216 (2016)
J. Ju, B. Sun, G. Haunschild, B. Loitsch, B. Stoib, M. S. Brandt, M. Stutzmann, Y. K. Koh, G. Koblmueller
Online Ref
Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization
New J. Phys. 18, 063009 (2016)
B. Loitsch, M. Müller, J. Winnerl, P. Veit, D. Rudolph, G. Abstreiter, J. J. Finley, F. Bertram, J. Christen, G. Koblmueller
Online Ref
Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires
Nano Letters 16, 5135 (2016)
M. Speckbacher, J. Treu, T. J. Whittles, W. M. Linhart, X. Xu, K. Saller, V. R. Dhanak, G. Abstreiter, J. J. Finley, T. D. Veal, G. Koblmueller
Online Ref
Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires
Appl. Phys. Lett. 109, 093105 (2016)
B. Loitsch, N. Jeon, M. Doeblinger, J. Winnerl, E. Parzinger, S. Matich, U. Wurstbauer, H. Riedl, G. Abstreiter, J. J. Finley, L. J. Lauhon, G. Koblmueller
Online Ref
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
Appl. Phys. Lett. 108, 11108 (2016)
T. Stettner, P. Zimmermann, B. Loitsch, M. Döblinger, A. Regler, B. Mayer, J. Winnerl, S. Matich, H. Riedl, M. Kaniber, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires
Appl. Phys. Lett. 108, 71107 (2016)
B. Mayer, L. Janker, D. Rudolph, B. Loitsch, T. Kostenbader, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Monolithically integrated high-beta nanowire lasers on silicon
Nano Letters 16, 152 (2016)
B. Mayer, L. Janker, B. Loitsch, J. Treu, T. Kostenbader, S. Lichtmannecker, T. Reichert, S. Morkötter, M. Kaniber, G. Abstreiter, C. Gies, G. Koblmueller, J. Finley
Online Ref
The native material limit of electron and hole mobilities in semiconductor nanowires
ACS Nano, 4942 (2016)
J. B. Kinzel, F. J. R. Schuelein, M. Weiss, L. Janker, D. D.  Buehler, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. Krenner
Online Ref
Towards pxn transverse thermoelectrics: extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation
SPIE OPTO 9765, 976508 (2016)
Y. Tang, G. Koblmueller, H. Riedl, M. Grayson
Online Ref
Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse-reaction growth
Advanced Materials 27, 2195 (2015)
B. Loitsch, D. Rudolph, S. Morkoetter, M. Doeblinger, G. Grimaldi, L. Hanschke, S. Matich, E. Parzinger, U. Wurstbauer, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref
Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core–shell nanowire transistors
Nano Letters 15, 3295 (2015)
S. Morkoetter, N. Jeon, D. Rudolph, B. Loitsch, D. Spirkoska, E. Hoffmann, M. Doeblinger, S. Matich, J. J. Finley, L. J. Lauhon, G. Abstreiter, G. Koblmueller
Online Ref
Lattice-matched InGaAs–InAlAs core–shell nanowires with improved luminescence and photoresponse properties
Nano Letters 15, 3533 (2015)
J. Treu, T. Stettner, M. Watzinger, S. Morkoetter, M. Doeblinger, S. Matich, K. Saller, M. Bichler, G. Abstreiter, J. J. Finley, J. Stangl, G. Koblmueller
Online Ref
Alloy Fluctuations Act as Quantum Dot-like Emitters in GaAs-AlGaAs Core–Shell Nanowires
ACS Nano 9, 8335 (2015)
N. Jeon, B. Loitsch, S. Morkötter, G. Abstreiter, J. Finley, H. Krenner, G. Koblmueller, L. Lauhon
Online Ref
Crystal phase quantum dots in the ultrathin core of GaAs-AlGaAs core-shell nanowires
Nano Letters 15, 7544 (2015)
B. Loitsch, J. Winnerl, G. Grimaldi, J. Wierzbowski, D. Rudolph, S. Morkötter, M. Doeblinger, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO3-GaAs hybrid
Appl. Phys. Lett., 13107 (2015)
J. Pustiowski, K. Mueller, M. Bichler, G. Koblmueller, J. Finley, A. Wixforth, H. J. Krenner
Modelling and simulation of InGaAs nanowire solar cells
IEEE Nano, Proc. Intl. Conf. on Nanotechnology 728-731 (2015)
B. Popescu, D. Popescu, P. Luppina, J. Treu, G. Koblmueller, P. Lugli, S. Goodnick
Online Ref
Photocurrents in a single InAs nanowire/ silicon heterojunction
ACS Nano 9, 9849 (2015)
A. Brenneis, J. Overbeck, J. Treu, S. Hertenberger, S. Morkötter, M. Döblinger, J. Finley, G. Abstreiter, G. Koblmueller, A. Holleitner
Online Ref
Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires
Nano Letters 15, 6869–6874 (2015)
N. Erhard, S. Zenger, S. Morkötter, D. Rudolph, M. Weiss, H. Krenner, H. Karl, G. Abstreiter, J. Finley, G. Koblmueller, A. Holleitner
Online Ref
Molecular beam epitaxy of nitrides for advanced electronic materials
Handbook of Crystal Growth, Thin Films and Epitaxy (Elsevier, ed. by T. Kuech), pp. 704-751, November (2014), Thin Films and Epitaxy (2015)
G. Koblmueller, J. R. Lang, E. C. Young, J. S. Speck
Online Ref
Trade-off between morphology, extended defects, and compositional fluctuation induced carrier localization in high In-content InGaN films
J. App. Phys. 116, 053501 (2014)
J. Ju, B. Loitsch, T. Stettner, F. Schuster, M. Stutzmann, G. Koblmueller
Online Ref
Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires
Appl. Phys. Lett. 105, 033111 (2014)
D. Rudolph, L. Schweickert, S. Morkoetter, B. Loitsch, S. Hertenberger, J. Becker, M. Bichler, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref
Dynamic acoustic control of individual optically active quantum dot-like emission centers in heterostructure nanowires
Nano Letters 14, 2256 (2014)
M. Weiss, J. B. Kinzel, F. J. R. Schuelein, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. J. Krenner
Online Ref
Growth and properties of InGaAs nanowires on silicon
phys. stat. sol.-RR, Topical Review 8, 11 (2014)
G. Koblmueller, G. Abstreiter
Online Ref
Pressure dependence of Raman spectrum in InAs nanowires
J. Phys. Cond. Matt 26 , 235301 (2014)
S. Yazji, I. Zardo, S. Hertenberger, S. Morkötter, G. Koblmueller, G. Abstreiter, P. Postorino
Online Ref
Radio frequency occupancy state control of single nanowire quantum dot
J. Phys. D: Appl. Phys. 47, 394011 (2014)
M. Weiss, F. J. R. Schuelein, J. B. Kinzel, M. Heigl, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner
Online Ref
Strong THz emission and its origin from catalyst-free InAs nanowire arrys
Nano Letters 14, 1508 (2014)
A. Arlauskas, J. Treu, K. Saller, I. Beleckaite, G. Koblmueller, A. Krotkus
Online Ref
Vacancy defect formation in PA-MBE grown C-doped InN
phys. stat. sol. (c) 11, 530 (2014)
V. Prozheeva, F. Tuomisto, G. Koblmueller, J. S. Speck, A. Knuebel, R. Aidam
Online Ref
N-type conductivity and properties of carbon-doped InN (0001) films grown by molecular beam epitaxy
J. Appl. Phys. 113, 033501 (2013)
M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischok, J. Pezoldt, P. Schley, E. Sakalauskas, R. Goldhahn, R. Felix, J. M. Manuel, F. M. Morales, D. Carvalho, T. Ben, R. Garcia, G. Koblmueller
Online Ref
Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap
Phys. Rev. B 87, 205303 (2013)
S. Morkoetter, S. Funk, M. Liang, M. Doeblinger, S. Hertenberger, J. Treu, D Rudolph, A. Yadav, J. Becker, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Spontaneous alloy composition ordering in GaAs-AlGaAs core–shell nanowires
Nano Letters 13, 1522 (2013)
D. Rudolph, S. Funk, M. Doeblinger, S. Morkoetter, S. Hertenberger, L. Schweickert, J. Becker, S. Matich, M. Bichler, D. Spirkoska, I. Zardo, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy
Appl. Phys. Lett. 102, 051916 (2013)
B. Loitsch, F. Schuster, M. Stutzmann, G. Koblmueller
Online Ref
Thermal conductivity tensor of semiconductor layers using two-wire 3-omega method
Quantum Sensing and Nanophotonic Devices X 8631, 863129 (2013)
C. Zhou, G. Koblmueller, M. Bichler, G. Abstreiter, M. Grayson
Online Ref
Enhanced luminescence properties of InAs–InAsP core–shell nanowires
Nano Letters 13, 6070 (2013)
J. Treu, M. Bormann, H. Schmeiduch, M. Doeblinger, S. Morkötter, S. Matich, P. Wiecha, K. Saller, B. Mayer, M. Bichler, M. C. Amann, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Acoustically regulated carrier injection into a single optically active quantum dot
Phys. Rev. B 88, 85307 (2013)
F. Schülein, K. Mueller, M. Bichler, G. Koblmueller, J. Finley, A. Wixforth, H. Krenner
Online Ref
Dirac cone shift of a passivated topological Bi2Se3 interface state
Phys. Rev. B 87, 155126 (2013)
G. S. Jenkins, D. C. Schmadel, A. B. S., H. D. Drew, M. Bichler, G. Koblmueller, M. Brahlek, N. Bansal, S. Oh
Online Ref
E1(A) Electronic band gap of wurtzite InAs nanowires studied by resonant Raman scattering
Nano Letters 13, 3011 (2013)
I. Zardo, S. Yazji, N. Hoermann, S. Hertenberger, S. Funk, S. Mangialardo, S. Morkötter, G. Koblmueller, P. Postorino, G. Abstreiter
Online Ref
High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures
Nano Letters 13, 6189 (2013)
S. Funk, M. Royo, I. Zardo, D. Rudolph, S. Morkötter, B. Mayer, J. Becker, A. Bechtold, S. Matich, M. Doeblinger, M. Bichler, G. Koblmueller, J. Finley, A. Bertoni, G. Goldoni, G. Abstreiter
Online Ref
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room-temperature
Nature Comm. 4, 2931 (2013)
B. Mayer, D. Rudolph, J. Schnell, S. Morkötter, J. Winnerl, J. Treu, K. Mueller, G. Bracher, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires
New J. Phys. 15, 113032 (2013)
D. Rudolph, L. Schweickert, S. Morkötter, L. Hanschke, S. Hertenberger, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley
Online Ref
Selective dry etching of N-face (Al,In,Ga)N heterostructures
US Patent, 130,099,277 (2013)
J. S. Speck, E. L. Hu, C. Weisbuch, Y. S. Choi, G. Koblmueller, M. Iza, C. Hurni
Ultrafast photocurrents and THz generation in single InAs nanowires
Annalen d. Physik 525, 180 (2013)
N. Erhard, P. Seifert, L. Prechtel, S. Hertenberger, H. Karl, G. Abstreiter, G. Koblmueller, A. Holleitner
Online Ref
All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current
Scientific Reports 3, 1906 (2013)
K. Mueller, T. Kaldewey, R. Ripszam, J. Wildmann, A. Bechtold, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley
Online Ref
Size, composition, and doping effects on In (Ga) As nanowire/Si tunnel diodes probed by conductive atomic force microscopy
Appl. Phys. Lett. 101, 233102 (2012)
T. Yang, S. Hertenberger, S. Morkoetter, G. Abstreiter, G. Koblmueller
Online Ref
High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
Appl. Phys. Lett. 101, 043116 (2012)
S. Hertenberger, S. Funk, K. Vizbaras, A. Yadav, D. Rudolph, J. Becker, S. Bolte, M. Doeblinger, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. J. Finley, M.-C. Amann, G. Abstreiter, G. Koblmueller
Online Ref
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
Nanotechnology 23, 235602 (2012)
S. Hertenberger, D. Rudolph, J. Becker, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Coupling of guided surface plasmon polaritons to proximal self-assembled InGaAs quantum dots
Proc. of SPIE 8269, 826920 (2012)
G. Bracher, K. Schraml, M. Blauth, C. Jakubeit, G. Koblmueller, K. Mueller, M. Bichler, M. Kaniber, J. Finley
Online Ref
Diameter dependent optical emission properties of InAs nanowires grown on Si
Appl. Phys. Lett. 101, 53103 (2012)
G. Koblmueller, K. Vizbaras, S. Hertenberger, S. Morkötter, D. Rudolph, J. Becker, M. Doeblinger, M. C. Amann, J. Finley, G. Abstreiter
Online Ref
Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111) B
Appl. Phys. Lett. 100, 192106 (2012)
F. Herzog, M. Bichler, G. Koblmueller, S. Prabhu-Gaunkar, W. Zhou, M. Grayson
Online Ref
Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well
JETP Letters, 11, 653, (2012)
F. Schülein, J. Pustiowski, K. Mueller, M. Bichler, G. Koblmueller, J. Finley, A. Wixforth, H. Krenner
Online Ref
Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
Appl. Phys. Lett. 98, 123114 (2011)
S. Hertenberger, D. Rudolph, S. Bolte, M. Doeblinger, M. Bichler, D. Spirkoska, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Direct observation of a noncatalytic growth regime for GaAs nanowires
Nano Letters 11, 3848 (2011)
D. Rudolph, S. Hertenberger, S. Bolte, W. Paosangthong, D. Spirkoska, M. Doeblinger, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Directional and Dynamic Modulation of the Optical Emission of an Individual GaAs Nanowire Using Surface Acoustic Waves
Nano Letters 11, 1512 (2011)
J. B. Kinzel, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. Krenner
Online Ref
Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN
Phys. Rev. B 84, 75315 (2011)
N. Miller, E. E. Haller, G. Koblmueller, C. Gallinat, J. S. Speck, W. J. Schaff, M. E. Hawkridge, K. M. Yu, J. W. Ager
Online Ref
Effects of stacking variations on the lattice dynamics of InAs nanowires
Phys. Rev. B 84, 155301 (2011)
N. Hoermann, I. Zardo, S. Hertenberger, S. Funk, S. Bolte, M. Döblinger, G. Koblmueller, G. Abstreiter
Online Ref
Nano Antenna Array for Terahertz Detection
IEEE Trans. Microwave Theory Tech. 59, 2751 (2011)
M. Bareiss, B. N. Tiwari, A. Hochmeister, G. Jegert, U. Zschieschang, H. Klauk, B. Fabel, G. Scarpa, G. Koblmueller, G. H. Bernstein, W. Porod, P. Lugli
Online Ref
Temperature-dependence and microscopic origin of low-frequency 1/f noise in GaN/AlGaN high electron mobility transistors
Appl. Phys. Lett. 99, 203501 (2011)
T. Roy, E. X. Zhang, Y. S. Puzyrev, X. Shen, D. M. Fleetwood, R. D. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, C. S. Suh, U. K. Mishra, J. S. Speck, S. T. Pantelides
Online Ref
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area molecular beam epitaxy
J. Appl. Phys. 108, 114316 (2010)
S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization
phys. stat. sol. (c) 7, 2455 (2010)
G. D. Metcalfe, H. Shen, M. Wraback, A. Hirai, G. Koblmueller, C. S. Gallinat, J. S. Speck
Online Ref
Evaluation of threading dislocation densities in In- and N-face InN
J. Appl. Phys. 107, 053517 (2010)
C. S. Gallinat, G. Koblmueller, F. Wu, J. S. Speck
Online Ref
High temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
J. Appl. Phys. 107, 403527 (2010)
G. Koblmueller, R. M. Chu, A. Raman, U. K. Mishra, J. S. Speck
Online Ref
Hole transport and photoluminescence in Mg-doped InN
J. Appl. Phys. 107, 113712 (2010)
N. Miller, J. W. Ager, H. M. Smith, M. A. Mayer, K. M. Yu, E. E. Haller, W. Walukiewicz, W. J. Schaff, G. Gallinat, G. Koblmueller, J. S. Speck
Online Ref
In vacancies in InN grown by plasma-assisted molecular beam epitaxy
Appl. Phys. Lett. 97, 251907 (2010)
F. Reurings, F. Tuomisto, C. S. Gallinat, G. Koblmueller, J. S. Speck
Online Ref
In vacancies in Si-doped InN
phys. stat. sol. (a) 207, 1083 (2010)
C. Rauch, F. Reurings, F. Tuomisto, T. D. Veal, C. F. McConville, H. Lu, W. J. Schaff, C. S. Gallinat, G. Koblmueller, J. S. Speck, W. Egger, B. Lowe, L. Ravelli, S. Sojak
Online Ref
Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature
Appl. Phys. Lett. 97, 191915 (2010)
G. Koblmueller, F. Reurings, F. Tuomisto, J. S. Speck
Online Ref
Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy
Appl. Phys. Lett. 96, 102111 (2010)
J. J. M. Law, E. T. Yu, G. Koblmueller, F. Wu, J. S. Speck
Online Ref
Optical anisotropy of a- and m-plane InN grown on free-standing GaN substrates
phys. stat. sol. (a) 207, 1062 (2010)
P. Schley, J. Rathel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Blasing, A. Krost, G. Koblmueller, J. S. Speck, R. Goldhahn
Online Ref
Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy
Nanotechnology 21, 365602 (2010)
G. Koblmueller, S. Hertenberger, K. Vizbaras, M. Bichler, F. Bao, J. P. Zhang, G. Abstreiter
Online Ref
Surface, bulk, and interface electronic properties of nonpolar InN
Appl. Phys. Lett. 97, 112103 (2010)
W. M. Linhart, T. D. Veal, P. D. C. King, G. Koblmueller, C. S. Gallinat, J. S. Speck, C. F. McConville
Online Ref
Terahertz radiation from nonpolar InN due to drift in an intrinsic in-plane electric field
Appl. Phys. Exp. 3, 92201 (2010)
G. D. Metcalfe, H. E. Shen, M. Wraback, G. Koblmueller, C. Gallinat, F. Wu, J. S. Speck
Online Ref
Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating
Appl. Phys. Lett. 97, 263107 (2010)
M. Soini, I. Zardo, E. Uccelli, S. Funk, G. Koblmueller, A. Fontcuberta i Morral, G. Abstreiter
Online Ref
THz generation from InN films due to destructive interference between optical rectification and photocurrent surge
Semicond. Sci. and Technol. 25, 15004 (2010)
G. B. Xu, Y. J. J. Ding, H. P. Zhao, G. Y. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblmueller, J. S. Speck
Online Ref
In adlayer mediated molecular beam epitaxial growth and properties of -plane InN on freestanding GaN
Appl. Phys. Lett. 94, 091905 (2009)
G. Koblmueller, G. D. Metcalfe, M. Wraback, F. Wu, C. S. Gallinat, J. S. Speck
Online Ref
Vacancy defects probed with positron annihilation spectroscopy in In‐polar InN grown by plasma‐assisted molecular beam epitaxy: Effects of growth conditions
phys. stat. sol. (c) 6, S401 (2009)
F. Reurings, F. Tuomisto, C. S. Gallinat, G. Koblmueller, J. S. Speck
Online Ref
The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN
Appl. Phys. Lett. 95, 022103 (2009)
C. S. Gallinat, G. Koblmueller, J. S. Speck
Online Ref
Surface structure and chemical states of -plane and -plane InN films
Appl. Phys. Lett. 95, 132104 (2009)
T. Nagata, G. Koblmueller, O. Bierwagen, C. S. Gallinat, J. S. Speck
Online Ref
Electrical and electrothermal transport in InN: The roles of defects
Physica B: Condensed Matter 404, 4862 (2009)
N. Miller, J. W. Ager III, R. E. Jones, H. M. Smith III, M. A. Mayer, K. M. Yu, M. E. Hawkridge, Z. Liliental-Weber, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmueller, J. S. Speck
Online Ref





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