|
High-throughput spectroscopy of geometry-tunable arrays of axial InGaAs nanowire heterostructures with twin-induced carrier confinement Nano Letters in press, DOI:10.1021/acs.nanolett.4c04852 (2024) H. W. Jeong, S. A. Church, M. Döblinger, A. Ajay, B. Haubmann, N. Patel, J. J. Finley, P. W. Parkinson, G. Koblmueller Online Ref | Interplay of electron trapping by defect midgap state and quantum confinement to optimize the hot-carrier effect in a nanowire Physical Review B 110, L121302 (2024) I. Makhfudz, H. Esmaielpour, Y. Hajati, G. Koblmueller, N. Cavassilas Online Ref | Continuous wave mid-infrared lasing from single InAs nanowires grown on silicon Advanced Functional Materials, 2414046 (2024) S. Meder, B. Haubmann, F. del Giudice, P. Schmiedeke, D. Busse, J. Zöllner, J. J. Finley, G. Koblmueller Online Ref | Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires Physical Review Materials 8, 076002 (2024) T. Schreitmueller, D. Kumar Saluja, C. E. Mead, M. Ramsteiner, H. W. Jeong, H. Esmaielpour, C. Huang, D. Ruhstorfer, J. J. Finley, L. J. Lauhon, G. Koblmueller Online Ref | Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier effects in InGaAs nanowires Physical Review B 109, 235303 (2024) H. Esmaielpour, N. Isaev, J. J. Finley, G. Koblmueller Online Ref | Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires Nanotechnology 35, 325206 (2024) I. Ayuso-Perez, E. Luna, A. da Silva, D. Ruhstorfer, M. Matzeck, G. Koblmueller, R. Engel-Herbert Online Ref | Fate of the superconducting state in floating islands of hybrid nanowire devices Physical Review B 109, L140501 (2024) E.V. Shpagina, E.S. Tikhonov, D. Ruhstorfer, G. Koblmueller, V.S. Khrapai Online Ref | Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths Applied Physics Letters 124, 071112 (2024) P. Schmiedeke, C. Doganlar, H. W. Jeong, M. Doeblinger, J. J. Finley, G. Koblmueller Online Ref | Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices ACS Applied Nano Materials 7, 3032 (2024) H. W. Jeong, A. Ajay, M. Doeblinger, S. Sturm, M. Gomez Ruiz, R. Zell, N. Mukhundhan, D. Stelzner, J. Laehnemann, K. Mueller-Caspary, J. J. Finley, G. Koblmueller Online Ref | Strong Dimensional and Structural Dependencies of Hot Carrier Effects in InGaAs Nanowires: Implications for Photovoltaic Solar Cells ACS Applied Nano Materials 7, 2817 (2024) H. Esmaielpour, N. Isaev, I. Makhfudz, M. Döblinger, J. J. Finley, G. Koblmueller Online Ref | Large tolerance of lasing properties to impurity defects in GaAs(Sb)-AlGaAs core-shell nanowire lasers Advanced Functional Materials 34, 2311210 (2024) T. Schreitmüller, H. W. Jeong, H. Esmaielpour, C. E. Mead, M. Ramsteiner, P. Schmiedeke, A. Thurn, A. Ajay, S. Matich, M. Döblinger, L. J. Lauhon, J. J. Finley, G. Koblmueller Online Ref |
| Fate of the superconducting state in floating islands of hybrid nanowire devices arXiv, arXiv:2311.10676 (2023) E. V. Shpagina, E. S. Tikhonov, D. Ruhstorfer, G. Koblmueller, V. S. Khrapai Online Ref | Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality Nanotechnology 35, 055601 (2023) P. Schmiedeke, M. Döblinger, M.-A. Meinhold-Heerlein, C. Doganlar, J. J. Finley, G. Koblmueller Online Ref | Hot electron dynamics in InAs-AlAsSb core-shell nanowires ACS Applied Energy Materials 6, 10467 (2023) D. Sandner, H. Esmaielpour, F. Del Giudice, S. Meder, M. Nuber, R. Kienberger, G. Koblmueller, H. Iglev Online Ref | Self-induced ultrafast electron-hole plasma temperature oscillations in nanowire lasers Physical Review Applied 20, 034045 (2023) A. Thurn, J. Bissinger, S. Meinecke, P. Schmiedeke, S. S. Oh, W. W. Chow, K. Lüdge, G. Koblmueller, J. J. Finley Online Ref | Structural properties of graded InxGa1-xAs metamorphic buffer layers for quantum dots emitting in the telecom bands Materials for Quantum Technology 3, 035004 (2023) B. Scaparra, A. Ajay, P.S. Avdienko, Y. Xue, H. Riedl, P. Kohl, B. Jonas, B. Costa, E. Sirotti, P. Schmiedeke, V. Villafañe, I.D. Sharp, E. Zallo, G. Koblmueller, J.J. Finley, K. Mueller Online Ref | Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale Nanoscale Advances 5, 2994 (2023) P. Schmiedeke, F. Panciera, J.-C. Harmand, L. Travers, G. Koblmueller Online Ref | Sb-mediated tuning of growth- and exciton dynamics in entirely catalyst-free GaAsSb nanowires Small 19, 2207531 (2023) H. W. Jeong, A. Ajay, H. Yu, M. Döblinger, N. Mukhundhan, J. J. Finley, G. Koblmueller Online Ref | Role of twin defects on the growth dynamics and size distribution of undoped and Si-doped GaAs nanowires by selective area epitaxy Journal of Applied Physics 132, 204302 (2022) D. Ruhstorfer, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller Online Ref | Hot carrier dynamics in InAs-AlAsSb core-shell nanowires arXiv 2210.11886 (2022) D. Sandner, H. Esmaielpour, F. del Giudice, M. Nuber, R. Kienberger, G. Koblmueller, H. Iglev Online Ref | 3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells ACS Nano 16, 20281 (2022) M. O Hill, P. Schmiedeke, C. Huang, S. Maddali, X. Hu, S. O. Hruszkewycz, J. J. Finley, G. Koblmueller, L. J. Lauhon Online Ref | Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects Appl. Phys. Lett. 121, 072107 (2022) A. Ajay, H. W. Jeong, T. Schreitmüller, M. Döblinger, D. Ruhstorfer, N. Mukhundhan, P. Koolen, J. J. Finley, G. Koblmueller Online Ref |
| Heat-mode excitation in a proximity superconductor Nanomaterials 12, 1461 (2022) A. Denisov, A. Bubis, S. Piatrusha, N. Titova, A. Nasibulin, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller, E. Tikhonov, V. Khrapai Online Ref | Purcell enhanced coupling of nanowire quantum emitters to silicon photonic waveguides Optics Express 29, 43068 (2021) N. Mukhundhan, A. Ajay, J. Bissinger, J. J. Finley, G. Koblmueller Online Ref | Epitaxial type-I and type-II InAs-AlAsSb core-shell nanowires on silicon Appl. Phys. Lett. 119, 193102 (2021) F. Del Giudice, S. Fust, P. Schmiedeke, J. Pantle, M. Döblinger, A. Ajay, S. Meder, H. Riedl, J. J. Finley, G. Koblmueller Online Ref | Sub-nanosecond acousto-electric carrier redistribution dynamics and transport in polytypic GaAs nanowires Nanotechnology 32, 505209 (2021) M. M. Sonner, M. Knedel, J. Berlin, D. Rudolph, G. Koblmueller, H. J. Krenner Online Ref | High-dimensional acousto-optoelectric correlation spectroscopy reveals coupled carrier dynamics in polytypic nanowires Phys. Rev. Applied 16, 034010 (2021) M. M. Sonner, D. Rudolph, G. Koblmueller, H. Krenner Online Ref | Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices Semicond. Sci. Technol. 36, 09LT04 (2021) A. O. Denisov, A. V. Bubis, S. U. Piatrusha, N. A. Titova, A. G. Nasibulin, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller, E. S. Tikhonov, V. S. Khrapai Online Ref | Ultrafast electron cycloids driven by the transverse spin of a surface acoustic wave Science Advances 7, eabf7414 (2021) M. Sonner, F. Khosravi, L. Janker, D. Rudolph, G. Koblmueller, Z. Jacob, H. J. Krenner Online Ref | Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 µm at room temperature Appl. Phys. Lett. 118, 221103 (2021) P. Schmiedeke, A. Thurn, S. Matich, M. Döblinger, J. J. Finley, G. Koblmueller Online Ref | Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si(111) by selective area molecular beam epitaxy Nanotechnology 32, 135604 (2021) D. Ruhstorfer, A. Lang, S. Matich, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller Online Ref | Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties Nanoscale 12, 21857 (2020) F. Del Giudice, J. Becker, C. de Rose, M. Döblinger, D. Ruhstorfer, L. Suomenniemi, J. Treu, H. Riedl, J. J. Finley, G. Koblmueller Online Ref | GaN thermal transport limited by the interplay of dislocations and size effects Phys. Rev. B 102, 014313 (2020) H. Li, R. Hanus, C. A. Polanco, A. Zeidler, G. Koblmueller, Y.-K. Koh, L. Lindsay Online Ref |
| Heat-mode excitation in a proximity superconductor arVix 2006.09803 (2020) A. O. Denisov, A. V. Bubis, S. U. Piatrusha, N. A. Titova, A. G .Nasibulin, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller, E. S. Tikhonov, V. S. Khrapai Online Ref | Contact architecture controls conductance in monolayer devices ACS Applied Materials & Interfaces 12, 28446 (2020) K. Saller, K.-C. Liao, H. Riedl, P. Lugli, G. Koblmueller, J. Schwartz, M. Tornow Online Ref | Pulsed THz emission from wurtzite phase catalyst-free InAs nanowires J. Phys. D: Appl. Phys. 53, 19LT01 (2020) R. Adomavičius, I. Nevinskas, J. Treu, X. Xu, G. Koblmueller, A. Krotkus Online Ref | Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires by molecular beam epitaxy Applied Physics Letters 116, 052101 (2020) D. Ruhstorfer, S. Mejia, M. Ramsteiner, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller Online Ref | Quantum confinement enhanced thermoelectric properties in modulation-doped GaAs-AlGaAs core-shell nanowires Advanced Materials 32, 1905458 (2020) S. Fust, A. Faustmann, D. J. Carrad, J. Bissinger, B. Loitsch, M. Doeblinger, J. Becker, G. Abstreiter, J. J. Finley, G. Koblmueller Online Ref | Nanoscale mapping of carrier recombination in GaAs-AlGaAs core-multishell nanowires by cathodoluminescence imaging in a scanning transmission electron microscope Appl. Phys. Lett. 115, 243102 (2019) M. Mueller, F. Bertram, P. Veit, B. Loitsch, J. Winnerl, S. Matich, J. J. Finley, G. Koblmueller, J. Christen Online Ref | Optical absorption of composition-tunable InGaAs nanowire arrays Nanotechnology 30, 495703 (2019) J. Treu, X. Xu, K. Ott, K. Saller, G. Abstreiter, J. J. Finley, G. Koblmueller Online Ref | Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples J. Appl. Phys. 126, 045705 (2019) M. Baj, L. H. Dmowski, A. Kwiatkowski, J. Przybytek, X. Wang, G. Koblmueller, C. S. Gallinat, J. S. Speck Online Ref | Optimized waveguide coupling of an integrated III-V nanowire laser on silicon J. Appl. Phys. 125, 243102 (2019) J. Bissinger, D. Ruhstorfer, T. Stettner, G. Koblmueller, J. J. Finley Online Ref | The one-step transfer printing of patterned nanogap electrodes J. Vac. Sci. Technol. B 37, 040602 (2019) K. Saller, H. Riedl, P. Lugli, G. Koblmueller, M. Tornow Online Ref | Break-down of corner states and carrier localization by monolayer fluctuations in radial nanowire quantum wells Nano Letters 19, 3336 (2019) M. M. Sonner, A. Sitek, L. Janker, D. Rudolph, D. Ruhstorfer, M. Döblinger, A. Manolescu, G. Abstreiter, J. J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner Online Ref |
| Contactless optical characterization of carrier dynamics in free-standing InAs-InAlAs core-shell nanowires on silicon Nano Letters 19, 990 (2019) X. Li, K. Zhang, J. Treu, L. Stampfer, G. Koblmueller, F. Toor, J. Prineas Online Ref | Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films Nature Materials 18, 136 (2019) B. Sun, G. Haunschild, C. Polanco, J. Ju, L. Lindsay, G. Koblmueller, Y. K. Koh Online Ref | Nanowire laser structure and fabrication method US Patent, App. 15/759,977 (2018) B. Mayer, G. Koblmueller, J. Finley, J. Klicpera, G. Abstreiter Online Ref | A method for fabricating a nanostructure US Patent, App. 15/759,986 (2018) G. Koblmueller, B. Mayer, J. Finley, G. Abstreiter Online Ref | Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core–Multishell Nanowires Nano Letters 18, 6292 (2018) T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, P. Schmiedeke, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, G. Koblmueller Online Ref | Connecting composition-driven faceting with facet-driven composition modulation in GaAs-AlGaAs core-shell nanowires Nano Letters 18, 5179 (2018) N. Jeon, D. Ruhstorfer, M. Döblinger, S. Matich, B. Loitsch, G. Koblmueller, L. J. Lauhon Online Ref | Noise insights into electronic transport JTEP Letters, 1-14 (2018) S.U. Piatrusha, L.V. Ginzburg, E.S. Tikhonov, D.V. Shovkun, G. Koblmueller, A.V. Bubis, A.K. Grebenko, A.G. Nasibulin, V.S. Khrapai Online Ref | Helium ion microscopy as a high-resolution probe for complex quantum heterostructures in core-shell nanowires Nano Letters 18, 3911 (2018) C. Pöpsel, J. Becker, N. Jeon, M. Döblinger, T. Stettner, Y. Trujillo Gottschalk, B. Loitsch, S. Matich, M. Altzschner, A.W. Holleitner, J. Finley, L.J. Lauhon, G. Koblmueller Online Ref | Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires Phys. Rev. B 97, 115306 (2018) J. Becker, S. Morkoetter, J. Treu, M. Sonner, M. Speckbacher, M. Doeblinger, G. Abstreiter, J. J. Finley, G. Koblmueller Online Ref | Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires Appl. Phys. Lett. 112, 091904 (2018) M. Sonner, J. Treu, K. Saller, H. Riedl, J. J. Finley, G. Koblmueller Online Ref | Correlated chemical and electrically active dopant analysis in catalyst-free Si-doped InAs nanowires ACS Nano 12, 1603 (2018) J. Becker, M. O. Hill, M. Sonner, J. Treu, M. Döblinger, A. Hirler, H. Riedl, J. Finley, L. J. Lauhon, G. Koblmueller Online Ref |
| Measuring three-dimensional strain and structural defects in a single InGaAs nanowire using coherent x-ray multiangle Bragg projection ptychography Nano Letters 18, 811 (2018) M. O. Hill, I. Calvo-Almazan, M. Allain, M. Holt, A. Ulvestad, J. Treu, G. Koblmueller, C. Huang, X. Huang, H. Yan, E. Nazarestski, Y. S. Chu, G. B. Stephenson, V. Chamard, L. Lauhon, O. Hruszkewycz Online Ref | Quantum transport and sub-band structure of modulation-doped GaAs/AlAs core–superlattice nanowires Nano Letters 17, 4886 (2017) D. M. Irber, J. Seidl, D. J. Carrad, J. Becker, N. Jeon, B. Loitsch, J. Winnerl, S. Matich, M. Doeblinger, Y. Tang, S. Morkoetter, G. Abstreiter, J. J. Finley, M. Grayson, L. J. Lauhon, G. Koblmueller Online Ref | Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions Semicond. Sci. Technol. 32, 094007 (2017) A. V. Bubis, A. O. Denisov, S. U. Piatrusha, I. E. Batov, V. S. Khrapai, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller Online Ref | Direct coupling of coherent emission from site-selectively grown III-V nanowire lasers into proximal silicon waveguides ACS Photonics 4, 2537 (2017) T. Stettner, T. Kostenbader, D. Ruhstorfer, J. Bissinger, H. Riedl, M. Kaniber, G. Koblmueller, J. Finley Online Ref | Enhanced THz emission efficiency of composition-tunable InGaAs nanowire arrays Appl. Phys. Lett. 110, 201106 (2017) I. Beleckaite, J. Treu, S. Morkötter, M. Doeblinger, X. Xu, R. Adomavicius, J. Finley, G. Koblmueller, A. Krotkus Online Ref | GaAs-AlGaAs core-shell nanowire lasers on silicon: Invited Review Semicond. Sci. Techol. Topical Review (2017) G. Koblmueller, B. Mayer, T. Stettner, G. Abstreiter, J. Finley Online Ref | Long-term mutual phase locking of picosecond pulse pairs generated by a semiconductor nanowire laser Nature Comm. 8, 15521 (2017) B. Mayer, A. Regler, S. Sterzl, T. Stettner, G. Koblmueller, M. Kaniber, B. Lingnau, K. Luedge, J. Finley Online Ref | Nanometer-scale resolved cathodoluminescence imaging: New insights into GaAs/AlGaAs core-shell nanowire lasers Microscopy and Microanalysis 23, 1470 (2017) M. Mueller, P. Veit, B. Loitsch, J. Winnerl, S. Matich, F. Bertram, G. Koblmueller, J. Finley, J. Christen | Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy Appl. Phys. Lett. 108, 053110 (2016) J. Treu, M. Speckbacher, K. Saller, S. Morkoetter, M. Doeblinger, X. Xu, H. Riedl, G. Abstreiter, J. J. Finley, G. Koblmueller Online Ref | Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices AIP Advances 6, 045216 (2016) J. Ju, B. Sun, G. Haunschild, B. Loitsch, B. Stoib, M. S. Brandt, M. Stutzmann, Y. K. Koh, G. Koblmueller Online Ref | Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization New J. Phys. 18, 063009 (2016) B. Loitsch, M. Müller, J. Winnerl, P. Veit, D. Rudolph, G. Abstreiter, J. J. Finley, F. Bertram, J. Christen, G. Koblmueller Online Ref |
| Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires Nano Letters 16, 5135 (2016) M. Speckbacher, J. Treu, T. J. Whittles, W. M. Linhart, X. Xu, K. Saller, V. R. Dhanak, G. Abstreiter, J. J. Finley, T. D. Veal, G. Koblmueller Online Ref | Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires Appl. Phys. Lett. 109, 093105 (2016) B. Loitsch, N. Jeon, M. Doeblinger, J. Winnerl, E. Parzinger, S. Matich, U. Wurstbauer, H. Riedl, G. Abstreiter, J. J. Finley, L. J. Lauhon, G. Koblmueller Online Ref | Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control Appl. Phys. Lett. 108, 11108 (2016) T. Stettner, P. Zimmermann, B. Loitsch, M. Döblinger, A. Regler, B. Mayer, J. Winnerl, S. Matich, H. Riedl, M. Kaniber, G. Abstreiter, G. Koblmueller, J. Finley Online Ref | Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires Appl. Phys. Lett. 108, 71107 (2016) B. Mayer, L. Janker, D. Rudolph, B. Loitsch, T. Kostenbader, G. Abstreiter, G. Koblmueller, J. Finley Online Ref | Monolithically integrated high-beta nanowire lasers on silicon Nano Letters 16, 152 (2016) B. Mayer, L. Janker, B. Loitsch, J. Treu, T. Kostenbader, S. Lichtmannecker, T. Reichert, S. Morkötter, M. Kaniber, G. Abstreiter, C. Gies, G. Koblmueller, J. Finley Online Ref | The native material limit of electron and hole mobilities in semiconductor nanowires ACS Nano, 4942 (2016) J. B. Kinzel, F. J. R. Schuelein, M. Weiss, L. Janker, D. D. Buehler, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. Krenner Online Ref | Towards pxn transverse thermoelectrics: extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation SPIE OPTO 9765, 976508 (2016) Y. Tang, G. Koblmueller, H. Riedl, M. Grayson Online Ref | Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse-reaction growth Advanced Materials 27, 2195 (2015) B. Loitsch, D. Rudolph, S. Morkoetter, M. Doeblinger, G. Grimaldi, L. Hanschke, S. Matich, E. Parzinger, U. Wurstbauer, G. Abstreiter, J. J. Finley, G. Koblmueller Online Ref | Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core–shell nanowire transistors Nano Letters 15, 3295 (2015) S. Morkoetter, N. Jeon, D. Rudolph, B. Loitsch, D. Spirkoska, E. Hoffmann, M. Doeblinger, S. Matich, J. J. Finley, L. J. Lauhon, G. Abstreiter, G. Koblmueller Online Ref | Lattice-matched InGaAs–InAlAs core–shell nanowires with improved luminescence and photoresponse properties Nano Letters 15, 3533 (2015) J. Treu, T. Stettner, M. Watzinger, S. Morkoetter, M. Doeblinger, S. Matich, K. Saller, M. Bichler, G. Abstreiter, J. J. Finley, J. Stangl, G. Koblmueller Online Ref | Alloy Fluctuations Act as Quantum Dot-like Emitters in GaAs-AlGaAs Core–Shell Nanowires ACS Nano 9, 8335 (2015) N. Jeon, B. Loitsch, S. Morkötter, G. Abstreiter, J. Finley, H. Krenner, G. Koblmueller, L. Lauhon Online Ref |
| Crystal phase quantum dots in the ultrathin core of GaAs-AlGaAs core-shell nanowires Nano Letters 15, 7544 (2015) B. Loitsch, J. Winnerl, G. Grimaldi, J. Wierzbowski, D. Rudolph, S. Morkötter, M. Doeblinger, G. Abstreiter, G. Koblmueller, J. Finley Online Ref | Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO3-GaAs hybrid Appl. Phys. Lett., 13107 (2015) J. Pustiowski, K. Mueller, M. Bichler, G. Koblmueller, J. Finley, A. Wixforth, H. J. Krenner | Modelling and simulation of InGaAs nanowire solar cells IEEE Nano, Proc. Intl. Conf. on Nanotechnology 728-731 (2015) B. Popescu, D. Popescu, P. Luppina, J. Treu, G. Koblmueller, P. Lugli, S. Goodnick Online Ref | Photocurrents in a single InAs nanowire/ silicon heterojunction ACS Nano 9, 9849 (2015) A. Brenneis, J. Overbeck, J. Treu, S. Hertenberger, S. Morkötter, M. Döblinger, J. Finley, G. Abstreiter, G. Koblmueller, A. Holleitner Online Ref | Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires Nano Letters 15, 6869–6874 (2015) N. Erhard, S. Zenger, S. Morkötter, D. Rudolph, M. Weiss, H. Krenner, H. Karl, G. Abstreiter, J. Finley, G. Koblmueller, A. Holleitner Online Ref | Molecular beam epitaxy of nitrides for advanced electronic materials Handbook of Crystal Growth, Thin Films and Epitaxy (Elsevier, ed. by T. Kuech), pp. 704-751, November (2014), Thin Films and Epitaxy (2015) G. Koblmueller, J. R. Lang, E. C. Young, J. S. Speck Online Ref | Trade-off between morphology, extended defects, and compositional fluctuation induced carrier localization in high In-content InGaN films J. App. Phys. 116, 053501 (2014) J. Ju, B. Loitsch, T. Stettner, F. Schuster, M. Stutzmann, G. Koblmueller Online Ref | Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires Appl. Phys. Lett. 105, 033111 (2014) D. Rudolph, L. Schweickert, S. Morkoetter, B. Loitsch, S. Hertenberger, J. Becker, M. Bichler, G. Abstreiter, J. J. Finley, G. Koblmueller Online Ref | Dynamic acoustic control of individual optically active quantum dot-like emission centers in heterostructure nanowires Nano Letters 14, 2256 (2014) M. Weiss, J. B. Kinzel, F. J. R. Schuelein, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. J. Krenner Online Ref | Growth and properties of InGaAs nanowires on silicon phys. stat. sol.-RR, Topical Review 8, 11 (2014) G. Koblmueller, G. Abstreiter Online Ref | Pressure dependence of Raman spectrum in InAs nanowires J. Phys. Cond. Matt 26 , 235301 (2014) S. Yazji, I. Zardo, S. Hertenberger, S. Morkötter, G. Koblmueller, G. Abstreiter, P. Postorino Online Ref |
| Radio frequency occupancy state control of single nanowire quantum dot J. Phys. D: Appl. Phys. 47, 394011 (2014) M. Weiss, F. J. R. Schuelein, J. B. Kinzel, M. Heigl, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner Online Ref | Strong THz emission and its origin from catalyst-free InAs nanowire arrys Nano Letters 14, 1508 (2014) A. Arlauskas, J. Treu, K. Saller, I. Beleckaite, G. Koblmueller, A. Krotkus Online Ref | Vacancy defect formation in PA-MBE grown C-doped InN phys. stat. sol. (c) 11, 530 (2014) V. Prozheeva, F. Tuomisto, G. Koblmueller, J. S. Speck, A. Knuebel, R. Aidam Online Ref | N-type conductivity and properties of carbon-doped InN (0001) films grown by molecular beam epitaxy J. Appl. Phys. 113, 033501 (2013) M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischok, J. Pezoldt, P. Schley, E. Sakalauskas, R. Goldhahn, R. Felix, J. M. Manuel, F. M. Morales, D. Carvalho, T. Ben, R. Garcia, G. Koblmueller Online Ref | Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap Phys. Rev. B 87, 205303 (2013) S. Morkoetter, S. Funk, M. Liang, M. Doeblinger, S. Hertenberger, J. Treu, D Rudolph, A. Yadav, J. Becker, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. J. Finley, G. Abstreiter, G. Koblmueller Online Ref | Spontaneous alloy composition ordering in GaAs-AlGaAs core–shell nanowires Nano Letters 13, 1522 (2013) D. Rudolph, S. Funk, M. Doeblinger, S. Morkoetter, S. Hertenberger, L. Schweickert, J. Becker, S. Matich, M. Bichler, D. Spirkoska, I. Zardo, J. J. Finley, G. Abstreiter, G. Koblmueller Online Ref | Reduced threading dislocation densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy Appl. Phys. Lett. 102, 051916 (2013) B. Loitsch, F. Schuster, M. Stutzmann, G. Koblmueller Online Ref | Thermal conductivity tensor of semiconductor layers using two-wire 3-omega method Quantum Sensing and Nanophotonic Devices X 8631, 863129 (2013) C. Zhou, G. Koblmueller, M. Bichler, G. Abstreiter, M. Grayson Online Ref | Enhanced luminescence properties of InAs–InAsP core–shell nanowires Nano Letters 13, 6070 (2013) J. Treu, M. Bormann, H. Schmeiduch, M. Doeblinger, S. Morkötter, S. Matich, P. Wiecha, K. Saller, B. Mayer, M. Bichler, M. C. Amann, J. Finley, G. Abstreiter, G. Koblmueller Online Ref | Acoustically regulated carrier injection into a single optically active quantum dot Phys. Rev. B 88, 85307 (2013) F. Schülein, K. Mueller, M. Bichler, G. Koblmueller, J. Finley, A. Wixforth, H. Krenner Online Ref | Dirac cone shift of a passivated topological Bi2Se3 interface state Phys. Rev. B 87, 155126 (2013) G. S. Jenkins, D. C. Schmadel, A. B. S., H. D. Drew, M. Bichler, G. Koblmueller, M. Brahlek, N. Bansal, S. Oh Online Ref |
| E1(A) Electronic band gap of wurtzite InAs nanowires studied by resonant Raman scattering Nano Letters 13, 3011 (2013) I. Zardo, S. Yazji, N. Hoermann, S. Hertenberger, S. Funk, S. Mangialardo, S. Morkötter, G. Koblmueller, P. Postorino, G. Abstreiter Online Ref | High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures Nano Letters 13, 6189 (2013) S. Funk, M. Royo, I. Zardo, D. Rudolph, S. Morkötter, B. Mayer, J. Becker, A. Bechtold, S. Matich, M. Doeblinger, M. Bichler, G. Koblmueller, J. Finley, A. Bertoni, G. Goldoni, G. Abstreiter Online Ref | Lasing from individual GaAs-AlGaAs core-shell nanowires up to room-temperature Nature Comm. 4, 2931 (2013) B. Mayer, D. Rudolph, J. Schnell, S. Morkötter, J. Winnerl, J. Treu, K. Mueller, G. Bracher, G. Abstreiter, G. Koblmueller, J. Finley Online Ref | Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires New J. Phys. 15, 113032 (2013) D. Rudolph, L. Schweickert, S. Morkötter, L. Hanschke, S. Hertenberger, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley Online Ref | Selective dry etching of N-face (Al,In,Ga)N heterostructures US Patent, 130,099,277 (2013) J. S. Speck, E. L. Hu, C. Weisbuch, Y. S. Choi, G. Koblmueller, M. Iza, C. Hurni | Ultrafast photocurrents and THz generation in single InAs nanowires Annalen d. Physik 525, 180 (2013) N. Erhard, P. Seifert, L. Prechtel, S. Hertenberger, H. Karl, G. Abstreiter, G. Koblmueller, A. Holleitner Online Ref | All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current Scientific Reports 3, 1906 (2013) K. Mueller, T. Kaldewey, R. Ripszam, J. Wildmann, A. Bechtold, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley Online Ref | Size, composition, and doping effects on In (Ga) As nanowire/Si tunnel diodes probed by conductive atomic force microscopy Appl. Phys. Lett. 101, 233102 (2012) T. Yang, S. Hertenberger, S. Morkoetter, G. Abstreiter, G. Koblmueller Online Ref | High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111) Appl. Phys. Lett. 101, 043116 (2012) S. Hertenberger, S. Funk, K. Vizbaras, A. Yadav, D. Rudolph, J. Becker, S. Bolte, M. Doeblinger, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. J. Finley, M.-C. Amann, G. Abstreiter, G. Koblmueller Online Ref | Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability Nanotechnology 23, 235602 (2012) S. Hertenberger, D. Rudolph, J. Becker, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmueller Online Ref | Coupling of guided surface plasmon polaritons to proximal self-assembled InGaAs quantum dots Proc. of SPIE 8269, 826920 (2012) G. Bracher, K. Schraml, M. Blauth, C. Jakubeit, G. Koblmueller, K. Mueller, M. Bichler, M. Kaniber, J. Finley Online Ref |
| Diameter dependent optical emission properties of InAs nanowires grown on Si Appl. Phys. Lett. 101, 53103 (2012) G. Koblmueller, K. Vizbaras, S. Hertenberger, S. Morkötter, D. Rudolph, J. Becker, M. Doeblinger, M. C. Amann, J. Finley, G. Abstreiter Online Ref | Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111) B Appl. Phys. Lett. 100, 192106 (2012) F. Herzog, M. Bichler, G. Koblmueller, S. Prabhu-Gaunkar, W. Zhou, M. Grayson Online Ref | Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well JETP Letters, 11, 653, (2012) F. Schülein, J. Pustiowski, K. Mueller, M. Bichler, G. Koblmueller, J. Finley, A. Wixforth, H. Krenner Online Ref | Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si Appl. Phys. Lett. 98, 123114 (2011) S. Hertenberger, D. Rudolph, S. Bolte, M. Doeblinger, M. Bichler, D. Spirkoska, J. J. Finley, G. Abstreiter, G. Koblmueller Online Ref | Direct observation of a noncatalytic growth regime for GaAs nanowires Nano Letters 11, 3848 (2011) D. Rudolph, S. Hertenberger, S. Bolte, W. Paosangthong, D. Spirkoska, M. Doeblinger, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmueller Online Ref | Directional and Dynamic Modulation of the Optical Emission of an Individual GaAs Nanowire Using Surface Acoustic Waves Nano Letters 11, 1512 (2011) J. B. Kinzel, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. Krenner Online Ref | Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN Phys. Rev. B 84, 75315 (2011) N. Miller, E. E. Haller, G. Koblmueller, C. Gallinat, J. S. Speck, W. J. Schaff, M. E. Hawkridge, K. M. Yu, J. W. Ager Online Ref | Effects of stacking variations on the lattice dynamics of InAs nanowires Phys. Rev. B 84, 155301 (2011) N. Hoermann, I. Zardo, S. Hertenberger, S. Funk, S. Bolte, M. Döblinger, G. Koblmueller, G. Abstreiter Online Ref | Nano Antenna Array for Terahertz Detection IEEE Trans. Microwave Theory Tech. 59, 2751 (2011) M. Bareiss, B. N. Tiwari, A. Hochmeister, G. Jegert, U. Zschieschang, H. Klauk, B. Fabel, G. Scarpa, G. Koblmueller, G. H. Bernstein, W. Porod, P. Lugli Online Ref | Temperature-dependence and microscopic origin of low-frequency 1/f noise in GaN/AlGaN high electron mobility transistors Appl. Phys. Lett. 99, 203501 (2011) T. Roy, E. X. Zhang, Y. S. Puzyrev, X. Shen, D. M. Fleetwood, R. D. Schrimpf, G. Koblmueller, R. Chu, C. Poblenz, N. Fichtenbaum, C. S. Suh, U. K. Mishra, J. S. Speck, S. T. Pantelides Online Ref | Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area molecular beam epitaxy J. Appl. Phys. 108, 114316 (2010) S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmueller Online Ref |
| Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization phys. stat. sol. (c) 7, 2455 (2010) G. D. Metcalfe, H. Shen, M. Wraback, A. Hirai, G. Koblmueller, C. S. Gallinat, J. S. Speck Online Ref | Evaluation of threading dislocation densities in In- and N-face InN J. Appl. Phys. 107, 053517 (2010) C. S. Gallinat, G. Koblmueller, F. Wu, J. S. Speck Online Ref | High temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels J. Appl. Phys. 107, 403527 (2010) G. Koblmueller, R. M. Chu, A. Raman, U. K. Mishra, J. S. Speck Online Ref | Hole transport and photoluminescence in Mg-doped InN J. Appl. Phys. 107, 113712 (2010) N. Miller, J. W. Ager, H. M. Smith, M. A. Mayer, K. M. Yu, E. E. Haller, W. Walukiewicz, W. J. Schaff, G. Gallinat, G. Koblmueller, J. S. Speck Online Ref | In vacancies in InN grown by plasma-assisted molecular beam epitaxy Appl. Phys. Lett. 97, 251907 (2010) F. Reurings, F. Tuomisto, C. S. Gallinat, G. Koblmueller, J. S. Speck Online Ref | In vacancies in Si-doped InN phys. stat. sol. (a) 207, 1083 (2010) C. Rauch, F. Reurings, F. Tuomisto, T. D. Veal, C. F. McConville, H. Lu, W. J. Schaff, C. S. Gallinat, G. Koblmueller, J. S. Speck, W. Egger, B. Lowe, L. Ravelli, S. Sojak Online Ref | Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature Appl. Phys. Lett. 97, 191915 (2010) G. Koblmueller, F. Reurings, F. Tuomisto, J. S. Speck Online Ref | Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy Appl. Phys. Lett. 96, 102111 (2010) J. J. M. Law, E. T. Yu, G. Koblmueller, F. Wu, J. S. Speck Online Ref | Optical anisotropy of a- and m-plane InN grown on free-standing GaN substrates phys. stat. sol. (a) 207, 1062 (2010) P. Schley, J. Rathel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Blasing, A. Krost, G. Koblmueller, J. S. Speck, R. Goldhahn Online Ref | Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy Nanotechnology 21, 365602 (2010) G. Koblmueller, S. Hertenberger, K. Vizbaras, M. Bichler, F. Bao, J. P. Zhang, G. Abstreiter Online Ref | Surface, bulk, and interface electronic properties of nonpolar InN Appl. Phys. Lett. 97, 112103 (2010) W. M. Linhart, T. D. Veal, P. D. C. King, G. Koblmueller, C. S. Gallinat, J. S. Speck, C. F. McConville Online Ref |
| Terahertz radiation from nonpolar InN due to drift in an intrinsic in-plane electric field Appl. Phys. Exp. 3, 92201 (2010) G. D. Metcalfe, H. E. Shen, M. Wraback, G. Koblmueller, C. Gallinat, F. Wu, J. S. Speck Online Ref | Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating Appl. Phys. Lett. 97, 263107 (2010) M. Soini, I. Zardo, E. Uccelli, S. Funk, G. Koblmueller, A. Fontcuberta i Morral, G. Abstreiter Online Ref | THz generation from InN films due to destructive interference between optical rectification and photocurrent surge Semicond. Sci. and Technol. 25, 15004 (2010) G. B. Xu, Y. J. J. Ding, H. P. Zhao, G. Y. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblmueller, J. S. Speck Online Ref | In adlayer mediated molecular beam epitaxial growth and properties of -plane InN on freestanding GaN Appl. Phys. Lett. 94, 091905 (2009) G. Koblmueller, G. D. Metcalfe, M. Wraback, F. Wu, C. S. Gallinat, J. S. Speck Online Ref | Vacancy defects probed with positron annihilation spectroscopy in In‐polar InN grown by plasma‐assisted molecular beam epitaxy: Effects of growth conditions phys. stat. sol. (c) 6, S401 (2009) F. Reurings, F. Tuomisto, C. S. Gallinat, G. Koblmueller, J. S. Speck Online Ref | The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN Appl. Phys. Lett. 95, 022103 (2009) C. S. Gallinat, G. Koblmueller, J. S. Speck Online Ref | Surface structure and chemical states of -plane and -plane InN films Appl. Phys. Lett. 95, 132104 (2009) T. Nagata, G. Koblmueller, O. Bierwagen, C. S. Gallinat, J. S. Speck Online Ref | Electrical and electrothermal transport in InN: The roles of defects Physica B: Condensed Matter 404, 4862 (2009) N. Miller, J. W. Ager III, R. E. Jones, H. M. Smith III, M. A. Mayer, K. M. Yu, M. E. Hawkridge, Z. Liliental-Weber, E. E. Haller, W. Walukiewicz, W. J. Schaff, C. Gallinat, G. Koblmueller, J. S. Speck Online Ref |
|
|
|