The one-step transfer printing of patterned nanogap electrodes J. Vac. Sci. Technol. B accepted (2019) K. Saller, H. Riedl, P. Lugli, G. Koblmueller, M. Tornow
Correlated chemical and electrically active dopant analysis in catalyst-free Si-doped InAs nanowires ACS Nano 12, 1603 (2018) J. Becker, M. O. Hill, M. Sonner, J. Treu, M. Döblinger, A. Hirler, H. Riedl, J. Finley, L. J. Lauhon, G. Koblmueller Online Ref
Towards pxn transverse thermoelectrics: extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation SPIE OPTO, 976508 (2016) Y. Tang, G. Koblmueller, H. Riedl, M. Grayson Online Ref
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy Appl. Phys. Lett., 53110 (2016) J. Treu, M. Speckbacher, K. Saller, S. Morkötter, M. Doeblinger, X. Xu, H. Riedl, G. Abstreiter, J. Finley, G. Koblmueller Online Ref
Controlled tunneling-induced dephasing of Rabi rotations for high fidelity hole spin initialization Phys. Rev. B 92, 115306 (2015) P. L. Ardelt, T. Simmet, K. Mueller, C. Dory, K. A. Fischer, A. Bechtold, A. Kleinkauf, H. Riedl, J. Finley Online Ref
Ferromagnetic Ge(Mn) nanostructures Physica E 32, 422-425 (2006) S. Ahlers, D. Bougeard, H. Riedl, G. Abstreiter, A. Trampert, W. Kipferl, M. Sperl, A. Bergmaier, G. Dollinger
Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition Physica E 21, 779-782 (2004) I. Bormann, K. Brunner, S. Hackenbuchner, H. Riedl, S. Schmult, W. Wegscheider, G. Abstreiter
Structural and optical properties of vertically correlated Ge island layers grown at low temperatures Materials Science and Engineering B 89, 54-57 (2002) M. Herbst, C. Schramm, K. Brunner, T. Asperger, H. Riedl, G. Abstreiter, A. Vörckel, H. Kurz, E. Müller
Photo- and electroluminescence characterization of erbium doped SiGe J. Vac. Sci. Technol. B 16 (1998) E. Neufeld, A. Sticht, K. Brunner, H. Riedl, G. Abstreiter
Walter Schottky Institut