Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources arXiv 2505.22886 (2025) B. Costa, B. Scaparra, X. Wei, H. Riedl, G. Koblmueller, E. Zallo, J. J. Finley, L. Hanschke, K. Mueller Online Ref
Structural properties of graded InxGa1-xAs metamorphic buffer layers for quantum dots emitting in the telecom bands Materials for Quantum Technology 3, 035004 (2023) B. Scaparra, A. Ajay, P.S. Avdienko, Y. Xue, H. Riedl, P. Kohl, B. Jonas, B. Costa, E. Sirotti, P. Schmiedeke, V. Villafañe, I.D. Sharp, E. Zallo, G. Koblmueller, J.J. Finley, K. Mueller Online Ref
Coherent Dynamics of the Swing-Up Excitation Technique arXiv:2211.14289 (2022) K. Boos, F. Sbresny, S. K. Kim, M. Kremser, H. Riedl, F. Bopp, W. Rauhaus, B. Scaparra, K. D. Jöns, J. J. Finley, K. Müller, L. Hanschke Online Ref
Quantum Dot Molecule Devices with Optical Control of Charge Status and Electronic Control of Coupling Adv. Quantum. Technol. 5, 2200049 (2022) F. Bopp, J. Rojas, N. Revenga, H. Riedl, F. Sbresny, K. Boos, T. Simmet, A. Ahmadi, D. Gershoni, J. Kasprzak, A. Ludwig, S. Reitzenstein, A. Wieck, D. Reuter, K. Mueller, J. J. Finley Online Ref
Role of twin defects on the growth dynamics and size distribution of undoped and Si-doped GaAs nanowires by selective area epitaxy Journal of Applied Physics 132, 204302 (2022) D. Ruhstorfer, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Stimulated Generation of Indistinguishable Single Photons from a Quantum Ladder System Phys. Rev. Lett. 128, 093603 (2022) F. Sbresny, L. Hanschke, E. Schöll, W. Rauhaus, B. Scaparra, K. Boos, H. Riedl, J. J. Finley, K. Jöns, K. Mueller Online Ref
Epitaxial type-I and type-II InAs-AlAsSb core-shell nanowires on silicon Appl. Phys. Lett. 119, 193102 (2021) F. Del Giudice, S. Fust, P. Schmiedeke, J. Pantle, M. Döblinger, A. Ajay, S. Meder, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si(111) by selective area molecular beam epitaxy Nanotechnology 32, 135604 (2021) D. Ruhstorfer, A. Lang, S. Matich, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties Nanoscale 12, 21857 (2020) F. Del Giudice, J. Becker, C. de Rose, M. Döblinger, D. Ruhstorfer, L. Suomenniemi, J. Treu, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Contact architecture controls conductance in monolayer devices ACS Applied Materials & Interfaces 12, 28446 (2020) K. Saller, K.-C. Liao, H. Riedl, P. Lugli, G. Koblmueller, J. Schwartz, M. Tornow Online Ref
Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires by molecular beam epitaxy Applied Physics Letters 116, 052101 (2020) D. Ruhstorfer, S. Mejia, M. Ramsteiner, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
The one-step transfer printing of patterned nanogap electrodes J. Vac. Sci. Technol. B 37, 040602 (2019) K. Saller, H. Riedl, P. Lugli, G. Koblmueller, M. Tornow Online Ref
Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core–Multishell Nanowires Nano Letters 18, 6292 (2018) T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, P. Schmiedeke, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, G. Koblmueller Online Ref
Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires Appl. Phys. Lett. 112, 091904 (2018) M. Sonner, J. Treu, K. Saller, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Correlated chemical and electrically active dopant analysis in catalyst-free Si-doped InAs nanowires ACS Nano 12, 1603 (2018) J. Becker, M. O. Hill, M. Sonner, J. Treu, M. Döblinger, A. Hirler, H. Riedl, J. Finley, L. J. Lauhon, G. Koblmueller Online Ref
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy Appl. Phys. Lett. 108, 053110 (2016) J. Treu, M. Speckbacher, K. Saller, S. Morkoetter, M. Doeblinger, X. Xu, H. Riedl, G. Abstreiter, J. J. Finley, G. Koblmueller Online Ref
Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires Appl. Phys. Lett. 109, 093105 (2016) B. Loitsch, N. Jeon, M. Doeblinger, J. Winnerl, E. Parzinger, S. Matich, U. Wurstbauer, H. Riedl, G. Abstreiter, J. J. Finley, L. J. Lauhon, G. Koblmueller Online Ref
Optical control of nonlinearly dressed states in an individual quantum dot Phys. Rev. B 93, 165305 (2016) P. L. Ardelt, M. Koller, T. Simmet, L. Hanschke, A. Bechtold, A. Regler, J. Wierzbowski, H. Riedl, J. J. Finley, K. Mueller Online Ref
Towards pxn transverse thermoelectrics: extreme anisotropic conduction in bulk doped semiconductor thin films via proton implantation SPIE OPTO 9765, 976508 (2016) Y. Tang, G. Koblmueller, H. Riedl, M. Grayson Online Ref
Controlled tunneling-induced dephasing of Rabi rotations for high fidelity hole spin initialization Phys. Rev. B 92, 115306 (2015) P. L. Ardelt, T. Simmet, K. Mueller, C. Dory, K. A. Fischer, A. Bechtold, A. Kleinkauf, H. Riedl, J. Finley Online Ref
Dissipative preparation of the exciton and biexciton in self-assembled quantum dots on picosecond timescales Phys. Rev. B 90, 241404 (2014) P. L. Ardelt, L. Hanschke, K. A. Fischer, K. Mueller, A. Kleinkauf, M. Koller, A. Bechtold, T. Simmet, J. Wierzbowski, H. Riedl, G. Abstreiter, J. Finley Online Ref
Ferromagnetic Ge(Mn) nanostructures Physica E 32, 422-425 (2006) S. Ahlers, D. Bougeard, H. Riedl, G. Abstreiter, A. Trampert, W. Kipferl, M. Sperl, A. Bergmaier, G. Dollinger
Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition Physica E 21, 779-782 (2004) I. Bormann, K. Brunner, S. Hackenbuchner, H. Riedl, S. Schmult, W. Wegscheider, G. Abstreiter
Structural and optical properties of vertically correlated Ge island layers grown at low temperatures Materials Science and Engineering B 89, 54-57 (2002) M. Herbst, C. Schramm, K. Brunner, T. Asperger, H. Riedl, G. Abstreiter, A. Vörckel, H. Kurz, E. Müller
Photo- and electroluminescence characterization of erbium doped SiGe J. Vac. Sci. Technol. B 16 (1998) E. Neufeld, A. Sticht, K. Brunner, H. Riedl, G. Abstreiter
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