Walter Schottky Institute
Center for Nanotechnology and Nanomaterials

Daniel Ruhstorfer

Daniel Ruhstorfer
Doctoral Candidate

Room S312
Tel.: (+49) 089 289 11549


Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core–Multishell Nanowires
Nano Letters 18, 6292 (2018)
T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, P. Schmiedeke, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, G. Koblmueller
Online Ref
Connecting composition-driven faceting with facet-driven composition modulation in GaAs-AlGaAs core-shell nanowires
Nano Letters 18, 5179 (2018)
N. Jeon, D. Ruhstorfer, M. Döblinger, S. Matich, B. Loitsch, G. Koblmueller, L. J. Lauhon
Online Ref
Direct coupling of coherent emission from site-selectively grown III-V nanowire lasers into proximal silicon waveguides
ACS Photonics 4, 2537 (2017)
T. Stettner, T. Kostenbader, D. Ruhstorfer, J. Bissinger, H. Riedl, M. Kaniber, G. Koblmueller, J. Finley
Online Ref
Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions
Semicond. Sci. Technol., 94007 (2017)
A. V. Bubis, A. O. Denisov, S. U. Piatrusha, I. E. Batov, J. Becker, D. Ruhstorfer, V. S. Khrapai, G. Koblmueller
Online Ref

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