Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires Physical Review Materials 8, 076002 (2024) T. Schreitmueller, D. Kumar Saluja, C. E. Mead, M. Ramsteiner, H. W. Jeong, H. Esmaielpour, C. Huang, D. Ruhstorfer, J. J. Finley, L. J. Lauhon, G. Koblmueller Online Ref
Microscopic insights into metal diffusion and ohmic contact formation in delta-doped GaAs/(Al,Ga)As core/shell nanowires Nanotechnology 35, 325206 (2024) I. Ayuso-Perez, E. Luna, A. da Silva, D. Ruhstorfer, M. Matzeck, G. Koblmueller, R. Engel-Herbert Online Ref
Fate of the superconducting state in floating islands of hybrid nanowire devices Physical Review B 109, L140501 (2024) E.V. Shpagina, E.S. Tikhonov, D. Ruhstorfer, G. Koblmueller, V.S. Khrapai Online Ref
Fate of the superconducting state in floating islands of hybrid nanowire devices arXiv, arXiv:2311.10676 (2023) E. V. Shpagina, E. S. Tikhonov, D. Ruhstorfer, G. Koblmueller, V. S. Khrapai Online Ref
Role of twin defects on the growth dynamics and size distribution of undoped and Si-doped GaAs nanowires by selective area epitaxy Journal of Applied Physics 132, 204302 (2022) D. Ruhstorfer, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Enhanced growth and properties of non-catalytic GaAs nanowires via Sb surfactant effects Appl. Phys. Lett. 121, 072107 (2022) A. Ajay, H. W. Jeong, T. Schreitmüller, M. Döblinger, D. Ruhstorfer, N. Mukhundhan, P. Koolen, J. J. Finley, G. Koblmueller Online Ref
Heat-mode excitation in a proximity superconductor Nanomaterials 12, 1461 (2022) A. Denisov, A. Bubis, S. Piatrusha, N. Titova, A. Nasibulin, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller, E. Tikhonov, V. Khrapai Online Ref
Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices Semicond. Sci. Technol. 36, 09LT04 (2021) A. O. Denisov, A. V. Bubis, S. U. Piatrusha, N. A. Titova, A. G. Nasibulin, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller, E. S. Tikhonov, V. S. Khrapai Online Ref
Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si(111) by selective area molecular beam epitaxy Nanotechnology 32, 135604 (2021) D. Ruhstorfer, A. Lang, S. Matich, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties Nanoscale 12, 21857 (2020) F. Del Giudice, J. Becker, C. de Rose, M. Döblinger, D. Ruhstorfer, L. Suomenniemi, J. Treu, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Heat-mode excitation in a proximity superconductor arVix 2006.09803 (2020) A. O. Denisov, A. V. Bubis, S. U. Piatrusha, N. A. Titova, A. G .Nasibulin, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller, E. S. Tikhonov, V. S. Khrapai Online Ref
Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires by molecular beam epitaxy Applied Physics Letters 116, 052101 (2020) D. Ruhstorfer, S. Mejia, M. Ramsteiner, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller Online Ref
Optimized waveguide coupling of an integrated III-V nanowire laser on silicon J. Appl. Phys. 125, 243102 (2019) J. Bissinger, D. Ruhstorfer, T. Stettner, G. Koblmueller, J. J. Finley Online Ref
Break-down of corner states and carrier localization by monolayer fluctuations in radial nanowire quantum wells Nano Letters 19, 3336 (2019) M. M. Sonner, A. Sitek, L. Janker, D. Rudolph, D. Ruhstorfer, M. Döblinger, A. Manolescu, G. Abstreiter, J. J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner Online Ref
Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core–Multishell Nanowires Nano Letters 18, 6292 (2018) T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, P. Schmiedeke, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, G. Koblmueller Online Ref
Connecting composition-driven faceting with facet-driven composition modulation in GaAs-AlGaAs core-shell nanowires Nano Letters 18, 5179 (2018) N. Jeon, D. Ruhstorfer, M. Döblinger, S. Matich, B. Loitsch, G. Koblmueller, L. J. Lauhon Online Ref
Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions Semicond. Sci. Technol. 32, 094007 (2017) A. V. Bubis, A. O. Denisov, S. U. Piatrusha, I. E. Batov, V. S. Khrapai, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller Online Ref
Walter Schottky Institut