Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


Daniel Ruhstorfer

Daniel Ruhstorfer
Doctoral Candidate

Room S312
Tel.: (+49) 089 289 11549


Publications

Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices
Semicond. Sci. Technol. 36, 09LT04 (2021)
A. O. Denisov, A. V. Bubis, S. U. Piatrusha, N. A. Titova, A. G. Nasibulin, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller, E. S. Tikhonov, V. S. Khrapai
Online Ref
Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si(111) by selective area molecular beam epitaxy
Nanotechnology 32, 135604 (2021)
D. Ruhstorfer, A. Lang, S. Matich, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller
Online Ref
Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties
Nanoscale 12, 21857 (2020)
F. Del Giudice, J. Becker, C. de Rose, M. Döblinger, D. Ruhstorfer, L. Suomenniemi, J. Treu, H. Riedl, J. J. Finley, G. Koblmueller
Online Ref
Heat-mode excitation in a proximity superconductor
arVix 2006.09803 (2020)
A. O. Denisov, A. V. Bubis, S. U. Piatrusha, N. A. Titova, A. G .Nasibulin, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller, E. S. Tikhonov, V. S. Khrapai
Online Ref
Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires by molecular beam epitaxy
Applied Physics Letters 116, 052101 (2020)
D. Ruhstorfer, S. Mejia, M. Ramsteiner, M. Döblinger, H. Riedl, J. J. Finley, G. Koblmueller
Online Ref
Optimized waveguide coupling of an integrated III-V nanowire laser on silicon
J. Appl. Phys. 125, 243102 (2019)
J. Bissinger, D. Ruhstorfer, T. Stettner, G. Koblmueller, J. J. Finley
Online Ref
Break-down of corner states and carrier localization by monolayer fluctuations in radial nanowire quantum wells
Nano Letters 19, 3336 (2019)
M. M. Sonner, A. Sitek, L. Janker, D. Rudolph, D. Ruhstorfer, M. Döblinger, A. Manolescu, G. Abstreiter, J. J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner
Online Ref
Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core–Multishell Nanowires
Nano Letters 18, 6292 (2018)
T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, P. Schmiedeke, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, G. Koblmueller
Online Ref
Connecting composition-driven faceting with facet-driven composition modulation in GaAs-AlGaAs core-shell nanowires
Nano Letters 18, 5179 (2018)
N. Jeon, D. Ruhstorfer, M. Döblinger, S. Matich, B. Loitsch, G. Koblmueller, L. J. Lauhon
Online Ref
Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions
Semicond. Sci. Technol. 32, 094007 (2017)
A. V. Bubis, A. O. Denisov, S. U. Piatrusha, I. E. Batov, V. S. Khrapai, J. Becker, J. Treu, D. Ruhstorfer, G. Koblmueller
Online Ref
Direct coupling of coherent emission from site-selectively grown III-V nanowire lasers into proximal silicon waveguides
ACS Photonics 4, 2537 (2017)
T. Stettner, T. Kostenbader, D. Ruhstorfer, J. Bissinger, H. Riedl, M. Kaniber, G. Koblmueller, J. Finley
Online Ref



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