Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


Ralf Meyer

Ralf Meyer


Room S215
Tel.: (+49) 089 289 12790


Publications

Selective Epitaxy and Growth on Structured Surfaces of Indium Phosphide by LP-MOVPE for Mid-Infrared Quantum Cascade Lasers
Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2016)
H. Schmeiduch, F. Demmerle, S. Saller, S. Sprengel, R. Meyer, M. C. Amann
Seletive Area Epitaxy and Growth on Patterned Surface of InP by LP-MOVPE for Mid-Infrared Quantum Cascade Lasers
International Nano-Optoelectronics Workshop (iNOW), München and Würzburg (2016) Winner of 'Best Poster Award 2016' (Third Place) (2016)
H. Schmeiduch, F. Demmerle, S. Saller, W. Oberhausen, S. Sprengel, R. Meyer, M. C. Amann
Flip-chip assembly of VCSELs to silicon grating couplers via laser fabricated SU8 prisms
Optics express 23, 28264-28270 (2015)
K. Kaur, A. Subramanian, P. Cardile, R. Verplancke, J. Van Kerrebrouck, S. Spiga, R. Meyer, J. Bauwelinck, R. Baets, G. Van Steenberge
Flip-chip bonding of VCSELs to silicon grating couplers via SU8 prisms fabricated using laser ablation
41st European conference on Optical Communication (ECOC), Valencia,  Spain (2015)
K. Kaur, A. Subramanian, R. Verplancke, P. Cardile, J. Van Kerrebrouck, S. Spiga, R. Meyer, J. Bauwelinck, R. Baets, G. Van Steenberge
InP-based type-II heterostructure lasers for up to 2.7 µm wavelength
42st Freiburg Infrared Colloquium, Freiburg, Germany (2015) (2015)
S. Sprengel, G. Veerabathran, A. Köninger, G. Boehm, R. Meyer, M. C. Amann
Advanced concepts for long wavelength surface and edge emitting lasers in the mid-IR
International Symposium on Compound Semiconductors (2013)
S. Sprengel, K. Vizbaras, C. Grasse, T. Gruendl, S. Arafin, A. Andrejew, G. Boehm, R. Meyer, M. C. Amann
Continuously Tunable, Polarization Stable SWG MEMS VCSELs at 1.55 µm
IEEE Photonics Technology Letters 25, 841-843 (2013)
T. Gruendl, K. Zogal, P. Debernardi, M. Mueller, C. Grasse, C. Gierl, K. Geiger, R. Meyer, G. Boehm, M. C. Amann, P. Meissner, F. Kuppers
Online Ref
InP-Based Type-II Quantum Well Lasers and LEDs
Invited Paper, 1900909 (2013)
S. Sprengel, C. Grasse, P. Wiecha, A. Andrejew, T. Gruendl, G. Boehm, R. Meyer, M. C. Amann
Light emission between 2 and 4 µm: Innovative active region designs for InP- and GaSb-based devices
(2013)
S. Sprengel, G. Boehm, K. Vizbaras, A. Andrejew, C. Grasse, T. Gruendl, R. Meyer, M. C. Amann
Mid-Wave Infrared and Terahertz Quantum Cascade Lasers Based on Resonant Nonlinear Frequency Mixing
Invited talk:, San Francisco, California, USA (2013)
A. Vizbaras, K. Vijayraghavan, F. Demmerle, M. Jang, G. Boehm, R. Meyer, M. Belkin, M. C. Amann
Online Ref
Record Single-Mode, High-Power VCSELs by Inhibition of Spatial Hole Burning
IEEE Journal of Selected Topics in Quantum Electronics 19, 1700913 (2013)
T. Gruendl, P. Debernardi, M. Mueller, C. Grasse, P. Ebert, K. Geiger, M. Ortsiefer, G. Boehm, R. Meyer, M. C. Amann
Online Ref
AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 µm grown by MOVPE on InP substrate
Journal of Crystal Growth 370, 217-220 (2012)
C. Grasse, M. Mueller, T. Gruendl, G. Boehm, E. Roenneberg, P. Wiecha, J. Rosskopf, M. Ortsiefer, R. Meyer, M. C. Amann
Online Ref
AlGaInAsPSb-based High-Speed Short-Cavity VCSEL with single-mode Emission at 1.3µm grown by MOVPE on InP substrate
16th International Conference on Metal Organic Vapor Phase Epitaxy, Busan, South Korea (2012)
C. Grasse, M. Mueller, T. Gruendl, G. Boehm, E. Roenneberg, P. Wiecha, M. Ortsiefer, J. Rosskopf, R. Meyer, M. C. Amann
GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 µm light emission grown on InP substrate
Journal of Crystal Growth 370, 240-243 (2012)
C. Grasse, T. Gruendl, S. Sprengel, P. Wiecha, K. Vizbaras, R. Meyer, M. C. Amann
GaInAs/GaAsSb-based type-II Micro-Cavity LED with 2-3µm light emission grown on InP substrate
16th International Conference on Metal Organic Vapor Phase Epitaxy, Busan, South Korea (2012)
C. Grasse, T. Gruendl, S. Sprengel, P. Wiecha, K. Vizbaras, R. Meyer, M. C. Amann
InP based type-II resonant cavity LEDs emitting up to 3.5 µm
DGKK Workshop 27, Erlangen, Germany (2012)
P. Wiecha, C. Grasse, S. Sprengel, T. Gruendl, R. Meyer, M. C. Amann
InP-based 2.8-3.5 µm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures
Applied Physics Letters 101, 221107 (2012)
C. Grasse, P. Wiecha, T. Gruendl, S. Sprengel, R. Meyer, M. C. Amann
Nonlinear GaInAs/AlInAs/InP quantum cascade laser sources for wavelength generation in the 2.7-70 µm wavelength range
Invited talk:, Vol. 8268, San Francisco, Ca, USA (2012)
A. Vizbaras, R. W. Adams, C. Grasse, M. Jang, R. Meyer, M. A. Belkin, M. C. Amann
Online Ref
Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation
Physica Status Solidi (c) 9, 298-301 (2012)
A. Vizbaras, M. Anders, C. Grasse, S. Katz, G. Boehm, R. Meyer, M. A. Belkin, M. C. Amann
Online Ref
102 nm Continuous Single-Mode Tuning with a Surface Micro-Machined tunable VCSEL
VCSEL-Day, European Workshop on VCSELs (2011)
C. Gierl, T. Gruendl, P. Debernardi, C. Grasse, G. Boehm, R. Meyer, P. Meissner, M. C. Amann
Comparison of InP- and GaSb-based VCSELs emitting at 2.3 µm suitable for carbon monoxide detection
, 442-445 (2011)
G. Boehm, A. Bachmann, J. Rosskopf, M. Ortsiefer, J. Chen, A. Hangauer, R. Meyer, R. Strzoda, M. C. Amann
Online Ref
Concepts and Realization of Widely Tunable InP VCSELs
Winner of 'Best Poster Award 2011' (First Place) (2011)
T. Gruendl, C. Gierl, K. Zogal, C. Grasse, M. Mueller, G. Boehm, R. Meyer, M. C. Amann, P. Meissner
Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation
Journal of Crystal Growth 323, 480-483 (2011)
C. Grasse, S. Katz, G. Boehm, A. Vizbaras, R. Meyer, M. C. Amann
Online Ref
First 102 nm Ultra-Widely Tunable MEMS VCSEL Based on InP
Winner of Best Student Paper Award 2011 (First Pla (2011)
T. Gruendl, C. Gierl, C. Grasse, K. Zogal, G. Boehm, R. Meyer, M. C. Amann, P. Meissner
GaAsSb:C / GaInAs:Si tunnel junctions with AlGaInAsSb:C grading for InP-based high-speed VCSELs
European Workshop on Metalorganic Vapor Phase Epitaxy, June 5-8, 2011, Wroclaw, Poland (2011)
C. Grasse, T. Gruendl, M. Mueller, R. Meyer, M. C. Amann
GaInAs/GaAsSb type-II quantum wells for up to 2.8µm light emission on InP substrate
26. DGKK Workshop, Stuttgart, Deutschland (2011)
C. Grasse, S. Sprengel, K. Vizbaras, T. Gruendl, P. Wiecha, R. Meyer, M. C. Amann
High-Power BCB Encapsulated VCSELs based on InP
(2011)
T. Gruendl, M. Mueller, K. Geiger, C. Grasse, G. Boehm, R. Meyer, M. C. Amann
Injectorless quantum cascade lasers
Journal of Applied Physics 109, 81101 (2011)
S. Katz, A. Vizbaras, R. Meyer, M. C. Amann
Online Ref
InP-based quantum cascade lasers with transversely integrated giant nonlinearity for wavelength generation in the 2.6 µm - 70 µm range by intracavity nonlinear frequency mixing
Proc. of the 40th Freiburg Infrared Colloquium, February 16 -17, Freibug, Germany (2011)
A. Vizbaras, M. Anders, R. W. Adams, C. Grasse, S. Katz, G. Boehm, R. Meyer, M. A. Belkin, M. C. Amann
Online Ref
Novel concept of a monolithically integrated MEMS VCSEL
IPRM 2011 - International Conference on Indium Phosphide and Related Materials, Berlin, Germany (2011)
T. Gruendl, R. Nagel, P. Debernardi, K. Geiger, C. Grasse, M. Ortsiefer, J. Rosskopf, G. Boehm, R. Meyer, M. C. Amann
Room-temperature lambda ~ 2.7 µm quantum cascade laser sources based on intracavity second-harmonic generation
47 (2011)
A. Vizbaras, M. Anders, S. Katz, C. Grasse, G. Boehm, R. Meyer, M. A. Belkin, M. C. Amann
Online Ref
Short-wavelength injectorless quantum cascade laser basedon second-harmonic generation
No Reference given. Winner of 'Best Poster Award 2011' (Third Place) (2011)
C. Grasse, A. Vizbaras, G. Boehm, R. Meyer, M. Belkin, M. C. Amann
Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation
International Symposium on Compound Semiconductors (ISCS-2011), May 22-26, Berlin, Germany, (2011)
A. Vizbaras, M. Anders, C. Grasse, S. Katz, G. Boehm, R. Meyer, M. A. Belkin, M. C. Amann
Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs
European Semiconductor Laser Workshop 2011, Lausanne, Switzerland (2011)
T. Gruendl, C. Grasse, M. Mueller, G. Boehm, R. Meyer, K. Zogal, C. Gierl, S. Jatta, P. Meissner, M. C. Amann
Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs
Oral. presentation - European Semiconductor Laser Workshop ESLW 2011, Lausanne (2011)
T. Gruendl, C. Grasse, M. Mueller, G. Boehm, R. Meyer, M. C. Amann, K. Zogal, C. Gierl, S. Jatta, P. Meissner
Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation
(2011)
C. Grasse, S. Katz, G. Boehm, A. Vizbaras, R. Meyer, M. C. Amann
Evaluation of injectorless quantum cascade lasers byc ombining XRD- and laser-characterisation
Journal of Crystal Growth 323 ( 1), 480–483 (2011)
C. Grasse, S. Katz, G. Boehm, A. Vizbaras, R. Meyer, M. C. Amann
Online Ref
BCB Encapsulated VCSEL Based on InP Suitable for MEMS Technology
VCSEL Day 2010 (2010)
T. Gruendl, C. Grasse, G. Boehm, R. Meyer, M. C. Amann
Design and realization of low density InAs quantum dots on AlGaInAs lattice matched to InP(001)
Journal of Crystal Growth 312, 2300 (2010)
R. Enzmann, M. Bareiss, D. Baierl, N. Hauke, G. Boehm, R. Meyer, J. Finley, M. C. Amann
Online Ref
Empirical modeling of the refractive index of (AlGaIn)As lattice matched to InP
Semiconductor Science and Technology 25 (2010)
C. Grasse, G. Boehm, M. Mueller, T. Gruendl, R. Meyer, M. C. Amann
Online Ref
Growth and Characterisation of GaAsSb:C/GaInAs:Si Tunnel Junctions for InP-based Long-Wavelength VCSELs
25. DGKK-Workshop, Aachen (2010)
C. Grasse, T. Gruendl, T. Hager, M. Toerpe, R. Meyer, M. C. Amann
Injectorless quantum cascade lasers for room-temperature short-wavelength emissionby efficient second-harmonic generation
Proceedings of the 23rd IEEE Photonics Society Annual Meeting, 367-368 (2010)
A. Vizbaras, S. Katz, M. Anders, C. Grasse, G. Boehm, R. Meyer, M. A. Belkin, M. C. Amann
Online Ref
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm
16th International Conference on Molecular Beam Epitaxy MBE 2010 (2010)
K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, M. C. Amann
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm
doi:10.1016/j.jcrysgro.2010.11.139 (2010)
K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, M. C. Amann
Tunable long wavelength MEMS VCSELs
SUBTUNE Workshop, Laserzentrum Nuremberg (2010)
T. Gruendl, C. Grasse, G. Boehm, R. Meyer, M. C. Amann
Al(In)As-(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers
J. Crystal Growth, 1932-1934 (2009)
G. Boehm, S. Katz, R. Meyer, M. C. Amann
Online Ref
Antimon assisted growth of InAs Quantum Dots
Deutscher MBE Workshop, Bochum, Germany (2009)
M. Bareiss, R. Enzmann, R. Meyer, G. Boehm, J. Finley, M. C. Amann
Concept of a single photon source based on InP for emission at 1.55 µm
International Conference on Nanomaterials and Nanosystems (NanoMats2009), Istanbul, Turkey (2009)
R. Enzmann, C. Jendrysik, M. Bareiss, C. Grasse, G. Boehm, R. Meyer, J. Finley, M. C. Amann
Online Ref
Concept of a Single Photon Source Based on InP for emission at 1.55 µm (Poster)
Nim/CeNS/SFB486 Winterschool 2009, Nanosystems and Sensors, 1.-7. March 2009 (2009)
R. Enzmann, M. Bareiss, G. Boehm, R. Meyer, J. Finley, M. C. Amann
Design and Technologies of High Speed MEMS-VCSEL Based on InP
European Workshop organized by CHALMERS University of Technology, Gothenburg, Sweden VCSEL Day 2009 (2009)
T. Gruendl, C. Grasse, G. Boehm, R. Meyer, M. C. Amann
Growth of low-density quantum dots emitting at telecommunication wavelengths
Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2009)
R. Enzmann, M. Bareiss, M. Kraus, G. Boehm, J. Finley, R. Meyer, M. C. Amann
InAs Quantum Dots emitting at 1.55 µm grown on InP substrate using MBE
DPG Fruehjahrstagung, Dresden, Germany (2009)
M. Bareiss, R. Enzmann, M. Kraus, R. Meyer, G. Boehm, J. Finley, M. C. Amann
InAs Quantum Dots on AlGaInAs emitting in the optical C-Band at 1.55µm
21th International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, USA (2009)
R. Enzmann, M. Kraus, M. Bareiss, C. Seidl, D. Baierl, G. Boehm, R. Meyer, J. Finley, M. C. Amann
Online Ref
Planarization of overgrown tunnel junctions for InP-based VCSEL by MOVPE
European Workshop on Metalorganic Vapor Phase Epitaxy 2009 (EWMOVPE XIII), Ulm, Germany (2009)
C. Grasse, M. Mueller, G. Boehm, R. Enzmann, Y. Xu, M. Goerblich, R. Meyer, M. Ortsiefer, M. C. Amann
Quantum Dots on AlGaInAs Lattice matched to InP emitting at 1.55 µm (Poster)
Nim/CeNS/SFB486 Winterschool 2009, Nanosystems and Sensors, 1.-7. March 2009 (2009)
M. Bareiss, R. Enzmann, G. Boehm, J. Finley, R. Meyer, M. C. Amann
Formation of self-assembled quantum dots using ultra low growth rate for applications in the telecommunication regime at 1.3 and 1.5 µm.
The 22nd General Conference of the Condensed Matter Division of the European Physical Society (EPS-CMD 22), Rom, Italy (2008)
C. Seidel, R. Enzmann, D. Baierl, C. Jendrysik, R. Meyer, J. J. Finley, M. C. Amann
GaInAsN growth studies for InP based Long Wavelength Laser Applications
International Conference: 15th ICMBE 2008, 1719-1722 (2008)
T. Gruendl, G. Boehm, R. Meyer, M. C. Amann
Online Ref
Growth of antimonides by MOVPE
DPG Fruehjahrstagung, Berlin, Germany (2008)
C. Grasse, R. Meyer, G. Boehm, M. C. Amann
Growth of low density quantum dots on AlGaInAs by MBE using ultra low growth rates
Semiconductor Quantum Dot Devices and Applications, Rennes, France (2008)
R. Enzmann, C. Seidel, C. Jendrysik, D. Baierl, M. Kraus, G. Boehm, R. Meyer, J. J. Finley, M. C. Amann
Growth of self-assembled quantum dots for single photon application at 1.55 µm
DPG Fruehjahrstagung, Berlin, Germany (2008)
D. Baierl, R. Enzmann, C. Seidel, C. Jendrysik, A. Heindl, S. Dachs, G. Boehm, R. Meyer, J. Finley, M. C. Amann
Growth of various antimony-containing alloys by MOVPE
Journal of Crystal Growth 310, 4835-4838 (2008)
C. Grasse, G. Boehm, U. Breuer, R. Meyer, M. C. Amann
Growth of various antimony-containing alloys by MOVPE
14th International Conference on MOVPE, Metz, France (2008)
C. Grasse, G. Boehm, U. Breuer, R. Meyer, M. C. Amann
Online Ref
Highly efficient single-photon emission from single quantum dots within a two-dimensional photonic band-gap
Phys. Rev. B 77, 73312 (2008)
M. Kaniber, A. Laucht, T. Hürlimann, M. Bichler, R. Meyer, M. C. Amann, J. J. Finley
Online Ref
Quantum Dot Single Photon Source for 1.3 and 1.55 µm (Poster)
1st Joint Nano Workshop, 10.-11. June 2008 (2008)
R. Enzmann, C. Jendrysik, D. Baierl, G. Boehm, J. Finley, R. Meyer, M. C. Amann
Realisation of Long Wavelength Lasers Based on InP Substrate
Invited talk: Graduierten Kolleg 2008, Darmstadt, Germany (2008)
T. Gruendl, G. Boehm, R. Meyer, M. C. Amann
Towards an electrically driven single photon source
DPG Fruehjahrstagung, Berlin, Germany (2008)
C. Jendrysik, R. Enzmann, D. Baierl, C. Seidel, A. Heindl, S. Türkcan, G. Boehm, R. Meyer, J. Finley, M. C. Amann
Towards an Electro-Optically Driven Single Photon emitting Device
(2008)
R. Enzmann, C. Jendrysik, C. Seidel, A. Heindl, D. Baierl, G. Boehm, R. Meyer, J. J. Finley, M. C. Amann
Online Ref
Efficient spatial redistribution of quantum dot spontaneous emission from two-dimensional photonic crystals
Appl. Phys. Lett. 91, 61106 (2007)
M. Kaniber, A. Kress, A. Laucht, M. Bichler, R. Meyer, M. C. Amann, J. J. Finley
Online Ref
Electrically probing photonic bandgap phenomena in contacted defect nanocavities
Appl. Phys. Lett. 91, 201111 (2007)
F. Hofbauer, S. Grimminger, J. Angele, G. Böhm, R. Meyer, M. C. Amann, J. J. Finley
Online Ref
Formation of self-assembled quantum dots on AlInAs and GaInAs matrices using a GaSb sublayer
Applied Physics Letters 91, 083111-3 (2007)
R. Enzmann, S. Dachs, R. Meyer, J. Finley, M. C. Amann
Online Ref
Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3µm
Journal of Crystal Growth 301, 941-944 (2007)
G. Böhm, M. Grau, O. Dier, K. Windhorn, E. Rönneberg, J. Rosskopf, R. Shau, R. Meyer, M. Ortsiefer, M. C. Amann
Growth of low density quantum dots on AlInAs and GaInAs using a thin GaSb sublayer
LWQD International Workshop on Long Wavelength Quantum Dots: Growth and Applications, Rennes, France (2007)
R. Enzmann, S. Dachs, R. Meyer, J. J. Finley, M. C. Amann
Incorporation behaviour of nitrogen in GaInAs layers based on InP substrate for indium concentrations from 0 to 100%.
Deutscher MBE Workshop 2007 (2007)
T. Gruendl, G. Boehm, R. Meyer, M. C. Amann
Realization of a tunnel-junction for electrically-pumped GaSb-based vertical-cavity surface-emitting lasers for sensing applications
European Semiconductor Laser Workshop (ESLW), Berlin, Germany (2007)
A. Bachmann, O. Dier, C. Lauer, K. Kashani, T. Lim, R. Meyer, M. C. Amann
Widely tunable twin-guide laser diodes with sampled gratings: design and performance
IEEE J. of Selected Topics in Quantum Electronics 13, 1095-1103 (2007)
R. Todt, T. Jacke, R. Meyer, R. Laroy, G. Morthier, M. C. Amann
Band offset measurements of quinternary (AlGaIn)(AsSb)
DPG Fruehjahrstagung, Dresden, Germany (2006)
A. Bachmann, O. Dier, C. Lauer, R. Meyer, M. C. Amann
Direct modulation of widely tunable twin-guide lasers
IEEE Photonics Technology Letters 18, 1293-1295 (2006)
R. Laroy, R. Todt, R. Meyer, M. C. Amann, G. Morthier, R. Baets
Fabrication of widely tunable (> 40 nm) twin-guide laser diodes
International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan (2006)
R. Meyer, R. Todt, T. Jacke, M. C. Amann
Influence of Indium-free sublayers on the formation of self-assembled quantum dots on InP(001)-Substrates
DPG Fruehjahrstagung, Dresden, Germany (2006)
R. Enzmann, S. Dachs, G. Böhm, R. Meyer, M. C. Amann
Long wavelength edge-emitting laser diodes with quinternary AlGaInAsSb barrier material
Nano- Optoelectronic Workshop and BaCaTec Summer School of Advances in Photonics, Berkeley, USA (2006)
A. Bachmann, O. Dier, M. Grau, C. Lauer, F. Fligge, R. Meyer, M. C. Amann
Sampled grating tunable twin-guide laser diodes with wide tuning range (?40nm) and large output power (?10mW)
physica status solidi, 3 (2006) 403-406 (2006)
R. Todt, T. Jacke, R. Meyer, J. Adler, R. Laroy, G. Morthier, M. C. Amann
30nm digitally tunable laser with a 0.57nm frequency grid
Conference on Lasers and Electro-Optic (CLEO) /Europe, Munich, Germany (2005)
T. Jacke, R. Todt, R. Meyer, M. C. Amann
32nm digitally tunable laser diode with a 0.58nm wavelength grid using a vertically integrated Mach-Zehnder interferometer
Applied Physics Letters 87, 201113 (2005)
T. Jacke, R. Todt, R. Meyer, M. C. Amann
High output power tunable twin-guide laser diodes with improved lateral current injection structure
Electronics Letters 41, 190-191 (2005)
R. Todt, T. Jacke, R. Meyer, M. C. Amann
Investigation of cavity modes and direct observation of Purcell enhancement in 2D photonic crystal defect microcavities
Physica E 26, 351-355 (2005)
A. Kress, F. Hofbauer, N. Reinelt, H. J. Krenner, M. Bichler, D. Schuh, R. Meyer, G. Abstreiter, J. J. Finley
Manipulation of the spontaneous emission dynamics of quantum dots in two-dimensional photonic crystals
Phys. Rev. B 71, 241304 (2005)
A. Kress, F. Hofbauer, N. Reinelt, M. Kaniber, H. J. Krenner, R. Meyer, G. Böhm, J. J. Finley
Online Ref
Modulation bandwidths of widely tunable SG-TTG laser diodes
European Semiconductor Laser Workshop (ESLW), Glasgow, United Kingdom (2005)
R. Laroy, G. Morthier, R. Todt, R. Meyer, M. C. Amann, R. Baets
Sampled grating tunable twin-guide laser diodes with over 40nm electronic tuning range
IEEE Photonics Technology Letters 17, 2514-2516 (2005)
R. Todt, T. Jacke, R. Meyer, J. Adler, R. Laroy, G. Morthier, M. C. Amann
State-of-the-art performance of widely tunable twin-guide laser diodes
European Semiconductor Laser Workshop (ESLW), Glasgow, United Kingdom (2005)
R. Todt, T. Jacke, R. Meyer, J. Adler, R. Laroy, G. Morthier, M. C. Amann
Thermally widely tunable laser diodes with distributed feedback
Applied Physics Letters 87, 21103 (2005)
R. Todt, T. Jacke, R. Meyer, M. C. Amann
Thermally widely tunable laser diodes with distributed feedback
Europ. Conf. Optical Commun., Glasgow, United Kingdom (2005)
R. Todt, T. Jacke, R. Meyer, M. C. Amann
Tunable twin-guide (TTG) distributed feedback (DFB) laser diodes with over 9nm continuous electro-optic tuning range
Electronics Letters 41, 1063-1065 (2005)
R. Todt, T. Jacke, R. Meyer, J. Adler, M. C. Amann
Wide wavelength tuning of sampled-grating tunable twin-guide laser diodes
Photonics West, San Jose, USA (2005)
R. Todt, T. Jacke, R. Meyer, M. C. Amann, R. Laroy, G. Morthier
Widely tunable twin-guide laser diodes at 1.55µm
OptoElectronics and Communications Conference (OECC), Seoul, Korea (2005)
R. Todt, T. Jacke, R. Meyer, J. Adler, R. Laroy, G. Morthier, M. C. Amann
Widely tunable twin-guide laser diodes with over 40nm-tuning range
International Symposium on Compound Semiconductors (ISCS), Rust, Germany (2005)
R. Todt, T. Jacke, R. Meyer, J. Adler, R. Laroy, G. Morthier, M. C. Amann
AlGaAsSb/AlGaInAs type-II superlattices for tuning regions in tunable laser diodes
Photonics Europe, Strasbourg, France (2004)
G. Rösel, T. Jacke, M. Grau, R. Meyer, M. C. Amann
Design and fabrication of widely tunable twin-guide laser diodes
Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (2004)
R. Todt, T. Jacke, R. Meyer, M. C. Amann, R. Laroy, G. Morthier
Enhanced carrier lifetime for the tuning region in tunable laser diodes based on type-II quantum wells
Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China (2004)
T. Jacke, G. Rösel, M. Grau, R. Meyer, M. C. Amann
Enhanced tuning efficiency in tunable laser diodes using type-II superlattices
IEEE Photonics Technology Letters 16, 738-740 (2004)
G. Rösel, T. Jacke, M. Grau, R. Meyer, M. C. Amann
InP-based long-wavelength vertical-cavity surface-emitting lasers with buried tunnel junction
physica status solidi, 1 (2004) 2183-2209 (2004)
C. Lauer, M. Ortsiefer, R. Shau, J. Rosskopf, G. Böhm, R. Meyer, M. C. Amann
Technology and design of widely tunable lasers with vertically integrated Mach-Zehnder Interferometer (VMZ) grown by Chemical Beam Epitaxy (CBE)
Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (2004)
T. Jacke, R. Todt, G. Rösel, R. Meyer, M. C. Amann
Tunable twin-guide laser diodes for wide wavelength tuning at 1.55µm
Optics East, Philadelphia, USA (2004)
R. Todt, T. Jacke, R. Meyer, M. C. Amann, R. Laroy, G. Morthier
Tuning performance of widely tunable twin-guide laser diodes
Workshop on Compound Semiconductor Devices and Integrated Circuits Europe (WOCSDICE), Smolenice Castle, Slovakia (2004)
R. Todt, T. Jacke, R. Meyer, M. C. Amann, R. Laroy, G. Morthier
Wide wavelength tuning of sampled grating tunable twin-guide laser diodes
Electronics Letters 40, 1491-1492 (2004)
R. Todt, T. Jacke, R. Meyer, G. Laroy, M. C. Morthier, M. C. Amann
Wide wavelength tuning of sampled-grating tunable twin-guide laser diodes
European Semiconductor Laser Workshop (ESLW), Säröhus, Sweden (2004)
R. Todt, T. Jacke, R. Meyer, M. C. Amann, R. Laroy, G. Morthier
Widely tunable lasers with vertically integrated Mach-Zehnder interferometer
International Conference on Indium Phosphide and Related Materials (IPRM), Kagoshima, Japan (2004)
T. Jacke, R. Todt, R. Meyer, M. Maute, M. C. Amann
InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 µm
Journal of Crystal Growth 251, 748-753 (2003)
G. Böhm, M. Ortsiefer, R. Shau, J. Rosskopf, C. Lauer, M. Maute, F. Köhler, F. Mederer, R. Meyer, M. C. Amann
Optimization of type-II heterostructures for the tuning region in tunable laser diodes
Semiconductor Science and Technology 18, 325-329 (2003)
G. Rösel, F. Köhler, R. Meyer, M. C. Amann
Progress on the development of a widely-tunable twin-guide laser
IST-NEWTON Workshop on Tunable Laser Diodes / European Semiconductor Laser Workshop, Torino, Italy (2003)
R. Todt, R. Meyer, M. C. Amann, R. Laroy, G. Morthier





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