Analysis of GaSb-based vertical cavity surface emitting lasers at Lambda = 3.93 µm IEEE Photonics conference (IPC), Orlando, Florida, USA (2017) G. Veerabathran, S. Sprengel, A. Andrejew, M. C. Amann
Electrically pumped mid-infrared vertical-cavity surface-emitting lasers emitting at3 µm International Nano-Optoelectronics Workshop (iNOW), Tianjin, Qian'an and Chengde, China (2017) (2017) A. Andrejew, S. Sprengel, M. C. Amann
GaSb-based Electrically-Pumped Vertical Cavity Surface Emitting Lasers for the 3-4 µm Wavelength Range CLEO: science and Innovations, San Jose, California, USA (2017) G. Veerabathran, S. Sprengel, A. Andrejew, M. C. Amann Online Ref
GaSb-based VCSELs emitting at 4 µm using type-II quantum wells European VCSEL Day 2017, Cardiff, UK (2017) G. Veerabathran, S. Sprengel, A. Andrejew, M. C. Amann
GaSb-based vertical-cavity surface-emitting lasers at 4 µm using type-II quantum wells International Nano-Optoelectronics Workshop (iNOW), Tianjin, Qian'an and Chengde, China (2017) Winner of 'Best Poster Award 2017' (First Place) (2017) G. Veerabathran, S. Sprengel, A. Andrejew, M. C. Amann
Room-temperature vertical-cavity surface-emitting lasers at 4 µm with GaSb-based type-II quantum wells Applied Physics Letters 110, 71104 (2017) G. Veerabathran, S. Sprengel, A. Andrejew, M. C. Amann Online Ref
Transient thermal analysis of semiconductor diode lasers under pulsed operation AIP Advances 7, 25208 (2017) G. Veerabathran, S. Sprengel, S. Karl, A. Andrejew, H. Schmeiduch, M. C. Amann Online Ref
Development of highly reflective distributed Bragg reflectors for vertical cavity surface emitting lasers above 2 µm Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2016) A. Andrejew, S. Sprengel, G. Veerabathran, M. C. Amann
Effect of Cavity Length, Strain and Mesa Capacitance on 1.5-µm VCSELs Performance Journal of Lightwave Technology 35, 3130 (2016) S. Spiga, D. Schoke, A. Andrejew, G. Boehm, M. C. Amann
Enhancing the small-signal bandwidth of single-mode 1.5-µm VCSELs IEEE Optical Interconnects Conference (OI), San Diego, California, USA (2016) S. Spiga, D. Schoke, A. Andrejew, G. Boehm, M. C. Amann Online Ref
First electrically pumped mid-infrared vertical-cavity surface-emitting lasers emitting around 3 µm European VCSEL Day 2016, Darmstadt, Germany (2016) A. Andrejew, S. Sprengel, M. C. Amann
GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 µm Optics Letters, Vol. 41, No. 12, pp. 2799-2802 (2016) A. Andrejew, S. Sprengel, M. C. Amann
High-speed 1.55-µm VCSELs for datacom and telecom applications 21st OptoElectronics and Communications Conference (OECC), Niigata, Japan (2016) S. Spiga, A. Andrejew, G. Boehm, M. C. Amann Online Ref
InP-based Vertical-Cavity Surface-Emitting Lasers at 2.5µm and beyond for highly sensitive gas detection Nanosystems Initiative Munich (NIM), Kirchberg, Austria (2016), Winner of 'Best Poster Award' (Third Place) (2016) F. Federer, S. Sprengel, A. Andrejew, M. C. Amann
Single-Mode 1.5-µm VCSELs with 22-GHz Small-Signal Bandwidth Optical Fiber Communication Conference (OFC), Tu3D.4 (2016) S. Spiga, D. Schoke, A. Andrejew, M. Müller, G. Boehm, M. C. Amann
Single-mode 1.5-µm VCSELs with small-signal bandwidth beyond 20 GHz 18th International Conference on Transparent Optical Networks (ICTON), Trento (2016) S. Spiga, A. Andrejew, G. Boehm, M. C. Amann Online Ref
Single-Mode High-Speed 1.5-µm VCSELs Journal of Lightwave Technology 35, 727 (2016) S. Spiga, W. Soenen, A. Andrejew, D. Schoke, X. Yin, J. Bauwelinck, G. Boehm, M. C. Amann Online Ref
2.5 µm VCSELs with InP-based type-II quantum wells VCSEL-Day, European Workshop on VCSELs (oral presentation), Lódz Poland (2015) (2015) S. Sprengel, A. Andrejew, G. Veerabathran, F. Federer, G. Boehm, M. C. Amann Online Ref
Continuous wave vertical cavity surface emitting lasers at 2.5 µm with InP-based type-II quantum wells Applied Physics Letters, Vol. 106, No. 15, pp. 151102 (2015) (2015) S. Sprengel, A. Andrejew, F. Federer, G. Veerabathran, G. Boehm, M. C. Amann
Electrically pumped mid-infrared VCSELs using type-II quantum wells European Semiconductor Laser Workshop, Madrid, Spain (2015) G. Veerabathran, S. Sprengel, A. Andrejew, F. Federer, G. Boehm, M. C. Amann
InP-Based Vertical-Cavity Surface-Emitting Lasers with Type-II Quantum Wells Invited Paper (2015) S. Sprengel, G. Veerabathran, F. Federer, A. Andrejew, M. C. Amann
On-Chip Generation, Routing, and Detection of Resonance Fluorescence Nano Letters 15, 5208 (2015) G. Reithmaier, M. Kaniber, F. Flassig, S. Lichtmannecker, K. Mueller, A. Andrejew, J. Vuckovic, R. Gross, J. Finley Online Ref
100-Ghz-spaced monolithic 1.55µm VCSEL arrays for metro network applications VCSEL Day 2014, Rennes, France (2014) A. Andrejew, S. Spiga, C. Xie, P. Dong, M. C. Amann, P. Winzer
InP-based type-II heterostructure lasers for wavelength above 2 µm Invited Talk: 2014 IEEE Summer Topicals Meeting Series, Montreal, Canada(2014) (2014) S. Sprengel, A. Andrejew, G. Veerabathran, F. Federer, G. Boehm, C. Grasse, M. C. Amann Online Ref
Advanced concepts for long wavelength surface and edge emitting lasers in the mid-IR International Symposium on Compound Semiconductors (2013) S. Sprengel, K. Vizbaras, C. Grasse, T. Gruendl, S. Arafin, A. Andrejew, G. Boehm, R. Meyer, M. C. Amann
InP-based type-II quantum well lasers for wavelengths above 2 µm European Semiconductor Laser Workshop, Bristol, UK (2013) S. Sprengel, G. Veerabathran, F. Federer, A. Andrejew, M. C. Amann
Investigation of Laser Performance of InP-based Short Cavity VCSELs with Stacked Active Region International Nano-Optoelectronics Workshop (iNOW) Cargese, Corsica (2013) A. Andrejew, M. Mueller, G. Boehm, M. C. Amann
Light emission between 2 and 4 µm: Innovative active region designs for InP- and GaSb-based devices (2013) S. Sprengel, G. Boehm, K. Vizbaras, A. Andrejew, C. Grasse, T. Gruendl, R. Meyer, M. C. Amann
Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions (2012) S. Sprengel, K. Vizbaras, A. Andrejew, T. Gruendl, K. Geiger, G. Boehm, C. Grasse, M. C. Amann
Room-temperature type-I GaSb-based lasers in the 3.0 – 3.7 µm wavelength range Invited talk:, San Francisco, California (2012) K. Vizbaras, A. Vizbaras, A. Andrejew, C. Grasse, S. Sprengel, M. C. Amann
Type-II InP-based lasers emitting at 2.55 µm Applied Physics Letters 100, 41109 (2012) S. Sprengel, A. Andrejew, K. Vizbaras, T. Gruendl, K. Geiger, G. Boehm, C. Grasse, M. C. Amann
Type-II quantum wells on InP emitting up to 3.2µm Winner of 'Best Poster Award 2012' (First Place) (2012) S. Sprengel, K. Vizbaras, C. Grasse, A. Andrejew, T. Gruendl, K. Geiger, G. Boehm, M. C. Amann
Low-Threshold 3 µm GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64°C International Conference on Indium Phosphide and Related Materials (IPRM), Berlin, Germany (2011) K. Vizbaras, A. Andrejew, A. Vizbaras, C. Grasse, S. Arafin, M. C. Amann
Room-temperature GaSb-based quinternary type-I quantum-well lasers for the wavelength range from 3.3 to 3.6µm European Semiconductor Laser Workshop 2011, Lausanne, Switzerland (2011) C. Grasse, K. Vizbaras, A. Andrejew, S. Sprengel, M. C. Amann
Walter Schottky Institut