Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


Prof. Dr. Gerhard Abstreiter

Prof. Dr. Gerhard Abstreiter
TUM Emeritus of Excellence

Room Z1.018
Tel.: (+49) 089 289 11570


Publications

Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires
Phys. Rev. B 97, 115306 (2018)
J. Becker, S. Morkoetter, J. Treu, M. Sonner, M. Speckbacher, M. Doeblinger, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref
GaAs-AlGaAs core-shell nanowire lasers on silicon: Invited Review
Semicond. Sci. Techol. Topical Review (2017)
G. Koblmueller, B. Mayer, T. Stettner, G. Abstreiter, J. Finley
Online Ref
Quantum transport and sub-band structure of modulation-doped GaAs/AlAs core-superlattice nanowires
Nano Lett., 4886 (2017)
D. Irber, J. Seidl, D. Carrad, J. Becker, N. Jeon, B. Loitsch, J. Winnerl, S. Matich, M. Doeblinger, Y. Tang, S. Morkötter, G. Abstreiter, J. Finley, M. Grayson, L. J. Lauhon, G. Koblmueller
Online Ref
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
Appl. Phys. Lett. 108, 11108 (2016)
T. Stettner, P. Zimmermann, B. Loitsch, M. Döblinger, A. Regler, B. Mayer, J. Winnerl, S. Matich, H. Riedl, M. Kaniber, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires
Appl. Phys. Lett. 108, 71107 (2016)
B. Mayer, L. Janker, D. Rudolph, B. Loitsch, T. Kostenbader, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Coulomb mediated hybridization of excitons in coupled quantum dots
Physical Review Letters 116, 77401 (2016)
P. L. Ardelt, K. Gawarecki, K. Mueller, A. Waeber, A. Bechtold, K. Oberhofer, J. M. Daniels, F. Klotz, M. Bichler, T. Kuhn, H. Krenner, P. Machnikowski, G. Abstreiter, J. Finley
Online Ref
Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires
Nano Lett. 16, 5135 (2016)
M. Speckbacher, J. Treu, T. J. Whittles, W. M. Linhart, X. Xu, K. Saller, V. R. Dhanak, G. Abstreiter, J. Finley, T. D. Veal, G. Koblmueller
Online Ref
Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization
New J. Phys, 63009 (2016)
B. Loitsch, M. Mueller, J. Winnerl, P. Veit, D. Rudolph, G. Abstreiter, J. Finley, F. Bertram, J. Christen, G. Koblmueller
Online Ref
Monolithically integrated high-beta nanowire lasers on silicon
Nano Letters 16, 152 (2016)
B. Mayer, L. Janker, B. Loitsch, J. Treu, T. Kostenbader, S. Lichtmannecker, T. Reichert, S. Morkötter, M. Kaniber, G. Abstreiter, C. Gies, G. Koblmueller, J. Finley
Online Ref
Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires
Appl. Phys. Lett. (2016)
B. Loitsch, N. Jeon, M. Döblinger, J. Winnerl, E. Parzinger, S. Matich, U. Wurstbauer, H. Riedl, G. Abstreiter, J. Finley, L. J. Lauhon, G. Koblmueller
Online Ref
The native material limit of electron and hole mobilities in semiconductor nanowires
ACS Nano, 4942 (2016)
J. B. Kinzel, F. J. R. Schuelein, M. Weiss, L. Janker, D. D.  Buehler, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. Krenner
Online Ref
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
Appl. Phys. Lett., 53110 (2016)
J. Treu, M. Speckbacher, K. Saller, S. Morkötter, M. Doeblinger, X. Xu, H. Riedl, G. Abstreiter, J. Finley, G. Koblmueller
Online Ref
Alloy Fluctuations Act as Quantum Dot-like Emitters in GaAs-AlGaAs Core–Shell Nanowires
ACS Nano 9, 8335 (2015)
N. Jeon, B. Loitsch, S. Morkötter, G. Abstreiter, J. Finley, H. Krenner, G. Koblmueller, L. Lauhon
Online Ref
Crystal phase quantum dots in the ultrathin core of GaAs-AlGaAs core-shell nanowires
Nano Letters 15, 7544 (2015)
B. Loitsch, J. Winnerl, G. Grimaldi, J. Wierzbowski, D. Rudolph, S. Morkötter, M. Doeblinger, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors
Nano Letters 15, 3295 (2015)
S. Morkötter, N. Jeon, D. Rudolph, B. Loitsch, D. Spirkoska, E. Hoffmann, M. Doeblinger, S. Matich, J. Finley, L. J. Lauhon, G. Abstreiter, G. Koblmueller
Online Ref
Lattice-matched InGaAs-InAlAs core-shell nanowires with improved luminescence and photoresponse properties
Nano Letters (2015)
J. Treu, T. Stettner, M. Watzinger, S. Morkötter, M. Doeblinger, S. Matich, K. Saller, M. Bichler, G. Abstreiter, J. Finley, J. Stangl, G. Koblmueller
Online Ref
Photocurrents in a single InAs nanowire/ silicon heterojunction
ACS Nano 9, 9849 (2015)
A. Brenneis, J. Overbeck, J. Treu, S. Hertenberger, S. Morkötter, M. Döblinger, J. Finley, G. Abstreiter, G. Koblmueller, A. Holleitner
Online Ref
Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth
Advanced Materials 27, 2195 (2015)
B. Loitsch, D. Rudolph, S. Morkötter, M. Doeblinger, G. Grimaldi, L. Hanschke, S. Matich, E. Parzinger, U. Wurstbauer, G. Abstreiter, J. Finley, G. Koblmueller
Online Ref
Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires
Nano Letters 15, 6869–6874 (2015)
N. Erhard, S. Zenger, S. Morkötter, D. Rudolph, M. Weiss, H. Krenner, H. Karl, G. Abstreiter, J. Finley, G. Koblmueller, A. Holleitner
Online Ref
Dissipative preparation of the exciton and biexciton in self-assembled quantum dots on picosecond timescales
Phys. Rev. B 90, 241404 (2014)
P. L. Ardelt, L. Hanschke, K. A. Fischer, K. Mueller, A. Kleinkauf, M. Koller, A. Bechtold, T. Simmet, J. Wierzbowski, H. Riedl, G. Abstreiter, J. Finley
Online Ref
Dynamic acoustic control of individual optically active quantum dot-like emission centers in heterostructure nanowires
Nano Letters, 2256 (2014)
M. Weiss, J. B. Kinzel, F. J. R. Schuelein, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. J. Krenner
Online Ref
Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires
Appl. Phys. Lett., 33111 (2014)
D. Rudolph, L. Schweickert, S. Morkötter, B. Loitsch, S. Hertenberger, J. Becker, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller
Online Ref
Growth and properties of InGaAs nanowires on silicon
phys. stat. sol., Topical Review (2014)
G. Koblmueller, G. Abstreiter
Online Ref
Pressure dependence of Raman spectrum in InAs nanowires
J. Phys. Cond. Matt, 235301 (2014)
S. Yazji, I. Zardo, S. Hertenberger, S. Morkötter, G. Koblmueller, G. Abstreiter, P. Postorino
Radio frequency occupancy state control of single nanowire quantum dot
J. Phys. D: Appl. Phys. (2014)
M. Weiss, F. J. R. Schuelein, J. B. Kinzel, M. Heigl, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner
Online Ref
E1(A) Electronic band gap of wurtzite InAs nanowires studied by resonant Raman scattering
Nano Letters, 3011 (2013)
I. Zardo, S. Yazji, N. Hoermann, S. Hertenberger, S. Funk, S. Mangialardo, S. Morkötter, G. Koblmueller, P. Postorino, G. Abstreiter
Enhanced luminescence properties of InAs-InAsP core-shell nanowires
Nano Letters 13, 6070 (2013)
J. Treu, M. Bormann, H. Schmeiduch, M. Doeblinger, S. Morkötter, S. Matich, P. Wiecha, K. Saller, B. Mayer, M. Bichler, M. C. Amann, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
High mobility one- and two-dimensional electron systems in nanowire-based quantum heterostructures
Nano Letters, 6189 (2013)
S. Funk, M. Royo, I. Zardo, D. Rudolph, S. Morkötter, B. Mayer, J. Becker, A. Bechtold, S. Matich, M. Doeblinger, M. Bichler, G. Koblmueller, J. Finley, A. Bertoni, G. Goldoni, G. Abstreiter
Online Ref
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room-temperature
Nature Comm., 2931 (2013)
B. Mayer, D. Rudolph, J. Schnell, S. Morkötter, J. Winnerl, J. Treu, K. Mueller, G. Bracher, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Laterally self-ordered silicon-germanium islands with optimized confinement properties
Appl. Phys. Lett. 103, 63105 (2013)
T. Zabel, N. Sircar, N. Hauke, J. Zweck, M. Döblinger, M. Kaniber, J. Finley, G. Abstreiter, D. Bougeard
Online Ref
Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces
102 (2013)
A. Bora, A. Pathak, K. C. Liao, M. I. Vexler, A. Kuligk, A. Cattani-Scholz, B. Meinerzhagen, G. Abstreiter, J. Schwartz, M. Tornow
Online Ref
Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires
New J. Phys., 113032 (2013)
D. Rudolph, L. Schweickert, S. Morkötter, L. Hanschke, S. Hertenberger, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley
Online Ref
Probing ultrafast carrier tunneling dynamics in individual quantum dots and molecules
(2013)
K. Mueller, A. Bechtold, C. Ruppert, T. Kaldewey, M. Zecherle, J. Wildmann, M. Bichler, H. Krenner, J. M. Villas-Boas, G. Abstreiter, M. Betz, J. Finley
Online Ref
Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap
Phys. Rev. B, 205303 (2013)
S. Morkötter, S. Funk, M. Liang, M. Doeblinger, S. Hertenberger, J. Treu, D. Rudolph, A. Yadav, J. Becker, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. Finley, G. Abstreiter, G. Koblmueller
Spontaneous alloy composition ordering in GaAs-AlGaAs core-shell nanowires
Nano Letters, 1522 (2013)
D. Rudolph, S. Funk, M. Doeblinger, S. Morkötter, S. Hertenberger, L. Schweickert, J. Becker, S. Matich, M. Bichler, D. Spirkoska, I. Zardo, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Ultrafast photocurrents and THz generation in single InAs nanowires
(2013)
N. Erhard, P. Seifert, L. Prechtel, S. Hertenberger, H. Karl, G. Abstreiter, G. Koblmueller, A. Holleitner
Online Ref
All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current
Scientific Reports 3, 1906 (2013)
K. Mueller, T. Kaldewey, R. Ripszam, J. Wildmann, A. Bechtold, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley
Online Ref
A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands
New J. Phys. 14, 83035 (2012)
N. Hauke, A. Tandaechanurat, T. Zabel, T. Reichert, H. Takagi, M. Kaniber, S. Iwamoto, D. Bougeard, J. Finley, G. Abstreiter, Y. Arakawa
Online Ref
All optical preparation, storage, and readout of a single spin in an individual quantum dot
No Reference given. 8272 (2012)
V. Jovanov, F. Klotz, S. Kapfinger, D. Heiss, S. Spiga, D. Rudolph, M. Bichler, M. S. Brandt, G. Abstreiter, J. Finley
Online Ref
Diameter dependent optical emission properties of InAs nanowires grown on Si
Appl. Phys. Lett. 101, 53103 (2012)
G. Koblmueller, K. Vizbaras, S. Hertenberger, S. Morkötter, D. Rudolph, J. Becker, M. Doeblinger, M. C. Amann, J. Finley, G. Abstreiter
Online Ref
Electrical Control of Interdot Electron Tunneling in a Double InGaAs Quantum-Dot Nanostructure
(2012)
K. Mueller, A. Bechtold, C. Ruppert, M. Zecherle, G. Reithmaier, M. Bichler, H. Krenner, G. Abstreiter, A. Holleitner, J. M. Villas-Boas, J. Finley
Online Ref
Enlarged magnetic focusing radius of photoinduced ballistic currents
Phys. Rev. B 86, 115315 (2012)
M. Stallhofer, C. Kastl, M. Brändlein, D. Schuh, W. Wegscheider, J. Kotthaus, G. Abstreiter, A. Holleitner
Online Ref
Few electron double quantum dot in an isotopically purified 28Si quantum well
Applied Physics Letters 100, 143110 (2012)
A. Wild, J. Kierig, J. Sailer, J. Ager, E. Haller, G. Abstreiter, S. Ludwig, D. Bougeard
Online Ref
Fluctuation induced luminescence sidebands in the emission spectra of resonantly driven quantum dots
arXiv:1207.6952 (2012) (2012)
F. Laussy, V. Jovanov, E. del Valle, A. Bechtold, S. Kapfinger, K. Mueller, S. Koch, A. Laucht, T. Eissfeller, M. Bichler, G. Abstreiter, J. Finley
Online Ref
High composition homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
Appl. Phys. Lett. 101, 43116 (2012)
S. Hertenberger, S. Funk, K. Vizbaras, A. Yadav, D. Rudolph, J. Becker, S. Bolte, M. Doeblinger, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. Finley, M. C. Amann, G. Abstreiter, G. Koblmueller
Online Ref
High fidelity optical preparation and coherent Larmor precession of a single hole in an InGaAs quantum dot molecule
85 (2012)
K. Mueller, A. Bechtold, C. Ruppert, C. Hautmann, J. Wildmann, T. Kaldewey, M. Bichler, H. Krenner, G. Abstreiter, M. Betz, J. Finley
Online Ref
Highly nonlinear excitonic Zeeman spin splitting in composition-engineered artificial atoms
Phys. Rev. B 85, 165433 (2012)
V. Jovanov, T. Eissfeller, S. Kapfinger, E. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, M. S. Brandt, G. Abstreiter, J. Finley
Online Ref
Molecular Architecture: Construction of Self-Assembled Organophosphonate Duplexes and Their Electrochemical Characterization
28, 7889-7896 (2012)
A. Cattani-Scholz, K. C. Liao, A. Bora, A. Pathak, C. Hundschell, B. Nickel, J. Schwartz, G. Abstreiter, M. Tornow
Online Ref
Pressure Tuning of the Optical Properties of GaAs Nanowires
ACS Nano 6, 3284-3291 (2012)
I. Zardo, S. Yazji, C. Marini, E. Uccelli, A. Fontcuberta i Morral, G. Abstreiter, P. Postorino
Online Ref
Probing ultrafast charge and spin dynamics in a quantum dot molecule
Proc. of SPIE Vol. 8260 8260, 826002 (2012)
K. Mueller, A. Bechtold, C. Ruppert, H. Krenner, M. Bichler, J. M. Villas-Boas, G. Abstreiter, M. Betz, J. Finley
Online Ref
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
Nanotechnology, 235602 (2012)
S. Hertenberger, D. Rudolph, J. Becker, M. Bichler, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Size, composition and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy
Appl. Phys. Lett., 233102 (2012)
T. Yang, S. Hertenberger, S. Morkötter, G. Abstreiter, G. Koblmueller
Online Ref
Time-resolved photoinduced thermoelectric and transport currents in GaAs nanowires
12 (2012)
L. Prechtel, M. Padilla, N. Erhard, H. Karl, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner
Online Ref
Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence
Physical Review B 85, 45309 (2012)
D. Spirkoska, A. L. Efros, W. R. L. Lambrecht, T. Cheiwchanchamnangij, A. Fontcuberta i Morral, G. Abstreiter
Online Ref
Direct observation of metastable hot trions in an individual quantum dot
Phys. Rev. B 84, 235321 (2011)
V. Jovanov, S. Kapfinger, M. Bichler, G. Abstreiter, J. Finley
Online Ref
A New Molecular Architecture for Molecular Electronics
(2011)
A. Cattani-Scholz, K. C. Liao, A. Bora, A. Pathak, M. Krautloher, B. Nickel, J. Schwartz, M. Tornow, G. Abstreiter
Online Ref
A Pore-Cavity-Pore Device to Trap and Investigate Single Nanoparticles and DNA Molecules in a Femtoliter Compartment: Confined Diffusion and Narrow Escape
Nano Letters 11 (2011)
D. Pedone, M. Langecker, G. Abstreiter, U. Rant
Online Ref
Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
Appl. Phys. Lett., 123114 (2011)
S. Hertenberger, D. Rudolph, S. Bolte, M. Döblinger, M. Bichler, D. Spirkoska, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Coherent control of electrical currents in semiconductor nanowires/-tubes
8 (2011)
M. Betz, C. Ruppert, S. Thunich, R. Newson, J. M. Menard, C. Sames, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner, H. M. van Driel
Online Ref
Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities
Physical Review B 84, 85320 (2011)
N. Hauke, S. Lichtmannecker, T. Zabel, F. Laussy, A. Laucht, M. Kaniber, D. Bougeard, G. Abstreiter, J. Finley, Y. Arakawa
Online Ref
Crystal Structure Transfer in Core/Shell Nanowires
Nano Lett. 11, 1690-1694 (2011)
R. E. Algra, M. Hocevar, M. A. Verheijen, I. Zardo, G. G. W. Immink, W. J. P. van Enckevort, G. Abstreiter, L. P. Kouwenhoven, E. Vlieg, E. P. A. M. Bakkers
Online Ref
Direct observation of a non-catalytic growth regime for GaAs nanowires
Nano Letters, 3848 (2011)
D. Rudolph, S. Hertenberger, S. Bolte, W. Paosangthong, D. Spirkoska, M. Doeblinger, M. Bichler, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Directional and Dynamic Modulation of the Optical Emission of an Individual GaAs Nanowire Using Surface Acoustic Waves
Nano Letters, 1512 (2011)
J. B. Kinzel, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. Krenner
Online Ref
Effects of stacking variations on the lattice dynamics of InAs nanowires
Phys. Rev. B, 155301 (2011)
N. Hoermann, I. Zardo, S. Hertenberger, S. Funk, S. Bolte, M. Döblinger, G. Koblmueller, G. Abstreiter
Online Ref
Excited state quantum couplings and optical switching of an artificial molecule
Phys. Rev. B 84, 81302 (2011)
K. Mueller, G. Reithmaier, E. Clark, V. Jovanov, M. Bichler, H. Krenner, M. Betz, G. Abstreiter, J. Finley
Online Ref
Free standing modulation doped core-shell GaAs/AlGaAs hetero-nanowires
Phys. Status Solidi RRL, 5, 353 (2011)
D. Spirkoska, A. Fontcuberta i Morral, J. Dufouleur, Q. Xie, G. Abstreiter
Online Ref
Interplay between electrical transport properties of GeMn thin films and Ge substrates
Phys. Rev. B 83, 125306 (2011)
N. Sircar, S. Ahlers, C. Majer, G. Abstreiter, D. Bougeard
Online Ref
Local modification of GaAs nanowires induced by laser heating
Nanotechnology 22, 325701 (2011)
S. Yazji, I. Zardo, M. Soini, P. Postorino, A. Fontcuberta i Morral, G. Abstreiter
Online Ref
Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots
Phys. Rev. B 83, 161303 (2011)
V. Jovanov, T. Eissfeller, S. Kaphinger, E. C. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, G. Abstreiter, J. J. Finley
Online Ref
Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots
Phys. Rev. B 83, 161303 (2011)
V. Jovanov, T. Eissfeller, S. Kapfinger, E. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, G. Abstreiter, J. Finley
Online Ref
All-optical coherent control of electrical currents in single GaAs nanowires
(2010)
C. Ruppert, S. Thunich, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner, M. Betz
Online Ref
Asymmetric optical nuclear spin pumping in a single uncharged quantum dot
Phys. Rev. B 82, 121307 (2010)
F. Klotz, V. Jovanov, J. Kierig, E. Clark, M. Bichler, G. Abstreiter, H. Schwager, G. Giedke, M. S. Brandt, J. Finley
Online Ref
Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities
New Journal of Physics 12, 53005 (2010)
N. Hauke, T. Zabel, K. Mueller, M. Kaniber, A. Laucht, D. Bougeard, G. Abstreiter, J. Finley, Y. Arakawa
Online Ref
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area molecular beam epitaxy
J. Appl. Phys., 114316 (2010)
S. Hertenberger, D. Rudolph, M. Bichler, J. Finley, G. Abstreiter, G. Koblmueller
Multiple Nanowire Species Synthesized on a Single Chip by Selectively Addressable Horizontal Nanochannels
Nano Letters 10(4), 1341 (2010)
Y. Xiang, K. Andreas, L. Moreno Codinachs, N. Kornelius, G. Abstreiter, A. Fontcuberta i Morral, B. Thomas
Multiplexed Parallel Single Transport Recordings on Nanopore Arrays
10 (2010)
A. Kleefen, D. Pedone, C. Grunwald, R. Wei, M. Firnkes, G. Abstreiter, U. Rant, R. Tampé
Online Ref
Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dot
, 96 (2010)
F. Klotz, V. Jovanov, J. Kierig, E. Clark, D. Rudolph, D. Heiss, M. Bichler, G. Abstreiter, M. S. Brandt, J. Finley
Online Ref
Optically monitoring electron spin relaxation in a single quantum dot using a spin memory device
Phys. Rev. B 82, 245316 (2010)
D. Heiss, V. Jovanov, F. Klotz, D. Rudolph, M. Bichler, G. Abstreiter, M. S. Brandt, J. Finley
Online Ref
Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond
97 (2010)
M. Stallhofer, M. Seifert, M. Hauf, G. Abstreiter, M. Stutzmann, J. A. Garrido, A. Holleitner
Online Ref
Quantum interference control of femtosecond, µA current bursts in single GaAs nanowires
Nano Lett. 10 (2010)
C. Ruppert, S. Thunich, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner, M. Betz
Online Ref
Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy
Nanotechnology, 365602 (2010)
G. Koblmueller, S. Hertenberger, K. Vizbaras, M. Bichler, F. Bao, J. P. Zhang, G. Abstreiter
Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating
Appl. Phys. Lett., 263107 (2010)
M. Soini, I. Zardo, E. Uccelli, S. Funk, G. Koblmueller, A. Fontcuberta i Morral, G. Abstreiter
Online Ref
Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures’
Nanotechnology 20, 075603 (2009) (2009)
M. Heiß, A. Gustafsson, S. Conesa-Boj, F. Peiro, J. R. Morante, G. Abstreiter, J. Arbiol, L. Samuelson, A. Fontcuberta i Morral
Detection and Size Analysis of Proteins with Switchable DNA Layers
Nano Letters DOI:, 2009 (2009)
U. Rant, E. Pringsheim, W. Kaiser, K. Arinaga, J. Knezevic, M. Tornow, S. Fujita, N. Yokoyama, G. Abstreiter
Online Ref
GaAs nanowires and related prismatic heterostructures
Semiconductor Science and Technology, 24, 113001 (2009)
D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Ge1-x Mnx Clusters: Central Structural and Magnetic Building Blocks of Nanoscale Wire-Like Self-Assembly in a Magnetic Semiconductor
Nano Letters 9 (11) (2009)
D. Bougeard, N. Sircar, S. Ahlers, V. Lang, G. Abstreiter, A. Trampert, J. M. LeBeau, S. Stemmer, D. W. Saxey, A. Cerezo
Online Ref
Investigation of a contacting scheme for self-assembled cleaved edge overgrown InAs nanowires and quantum dot arrays
206, 1620 (2009)
M. Fehr, E. Uccelli, S. Dasgupta, M. Bichler, L. Steinke, G. Abstreiter, M. Grayson, A. Fontcuberta i Morral
Long Range Epitaxial Growth of Prismatic Heterostructures on the facets of Catalyst-Free GaAs Nanowires
J. Mater. Chemistry 19, 840 (2009)
M. Heigoldt, J. Arbiol, D. Spirkoska, J. M. Rebled, S. Conesa-Boj, G. Abstreiter, F. Peiró, J. R. Morante, A. Fontcuberta i Morral
Outcoupling of Light Generated in a Monolithic Silicon Photonic Crystal Nanocavity through a Lateral Waveguide
Jpn. J. Appl. Phys 48 (2009)
D. Dorfner, S. Iwamoto, M. Nomura, S. Nakayama, J. Finley, G. Abstreiter, Y. Arakawa
Online Ref
Photocurrent and photoconductance properties of a GaAs nanowire
Applied Physics Letters 95, 83111 (2009)
S. Thunich, L. Prechtel, D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner
Online Ref
Photonic Crystal Nanostructures for Optical Biosensing Applications
24 (2009)
D. Dorfner, T. Zabel, T. Hürlimann, N. Hauke, L. Frandsen, U. Rant, G. Abstreiter, J. Finley
Online Ref
Planar Nanogap Electrodes by Direct Nanotransfer Printing
SMALL 5, 579 (2009)
S. Strobel, S. Harrer, G. Scarpa, G. Abstreiter, P. Lugli, M. Tornow
Online Ref
PNA-PEG Modified Silicon Platforms as Functional Bio-Interfaces for Applications in DNA Microarrays and Biosensors
Biomacromolecules 10, 489-496 (2009)
A. Cattani-Scholz, D. Pedone, F. Blobner, G. Abstreiter, J. Schwartz, M. Tornow, L. Andruzzi
Online Ref
Raman Spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects
Physical Review B 80, 245324 (2009)
I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Selective optical charge generation, storage, and readout in a single self-assembled quantum dot
Appl. Phys. Lett. 94, 72108 (2009)
D. Heiss, V. Jovanov, M. Caesar, M. Bichler, G. Abstreiter, J. Finley
Online Ref
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
Physical Review B 80, 245325 (2009)
D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Roessler, F. Peiro, J. R. Morante, G. Abstreiter, L. Samuelson, A. Fontcuberta i Morral
Online Ref
Charge and spin readout scheme for single self-assembled quantum dots
Phys. Rev. B 77, 235442 (2008)
D. Heiss, V. Jovanov, M. Bichler, G. Abstreiter, J. Finley
Online Ref
Controlled synthesis of InAs wires, dot and twin-dot array configurations by Cleaved Edge Overgrowth
19 (2008)
E. Uccelli, M. Bichler, S. Nürnberger, G. Abstreiter, A. Fontcuberta i Morral
Erratum: “Nucleation mechanism of gallium-assisted Molecular Beam Epitaxy growth of Gallium Arsenide nanowires”
Appl. Phys. Lett. 92, 63112 (2008)
A. Fontcuberta i Morral, K. Maslov, C. Colombo, G. Abstreiter, J. Arbiol, J. R. Morante
Online Ref
Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
Phys. Rev. B 77, 155326 (2008)
C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy
J. Cryst. Growth, 310, 1049 (2008)
M. Heiß, E. Riedelberg, D. Spirkoska, M. Bichler, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Growth mechanisms of self assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets
Superlattices and Microstructures 44, 425 (2008)
E. Uccelli, S. Nürnberger, M. Bichler, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Microstructured horizontal alumina pore arrays as growth templates for large area few and single nanowire devices
phys.stat.sol. (RRL) 2, 59 (2008)
Y. Xiang, W. Lee, K. Nielsch, G. Abstreiter, A. Fontcuberta i Morral
Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
Appl. Phys. Lett. 92 063112 (2008)
A. Fontcuberta i Morral, C. Colombo, J. Arbiol, J. R. Morante, G. Abstreiter
Online Ref
Organophosphonate-Based PNA-Functionalization of Silicon Nanowires for Label-Free DNA Detection
ACSNano 2, 1653-1660 (2008)
A. Cattani-Scholz, D. Pedone, M. Dubey, S. Neppl, B. Nickel, P. Feulner, J. Schwartz, G. Abstreiter, M. Tornow
Online Ref
Prismatic Quantum Heterostructures Synthesized on Molecular-Beam Epitaxy GaAs Nanowires
7, 4, 899 (2008)
A. Fontcuberta i Morral, D. Spirkoska, J. Arbiol, M. Heigoldt, J. R. Morante, G. Abstreiter
Online Ref
Room Temperature Nanoimprint Lithography Using Molds Fabricated by Molecular Beam Epitaxy
7, 363 (2008)
S. Harrer, S. Strobel, G. Scarpa, G. Abstreiter, M. Tornow, P. Lugli
Online Ref
Self-assembly of InAs quantum dot structures on cleaved facets
(2008)
E. Uccelli, J. Bauer, M. Bichler, D. Schuh, J. Finley, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Silicon Photonic Crystal Nanostructures for Refractive Index Sensing
Appl. Phys. Lett. 93, 181103 (2008)
D. Dorfner, T. Hürlimann, T. Zabel, G. Abstreiter, L. H. Frandsen, J. Finley
Online Ref
Silicon-on-insulator based nanopore cavity arrays for lipid membrane investigation
Nanotechnology 19 (2008)
K. Buchholz, A. Tinazli, A. Kleefen, D. Dorfner, D. Pedone, U. Rant, R. Tampe, G. Abstreiter, M. Tornow
Online Ref
Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass
Applied Physics Letters 93, 132102 (2008)
S. Dasgupta, S. Birner, C. Knaak, M. Bichler, A. Fontcuberta i Morral, G. Abstreiter, M. Grayson
Online Ref
Size and environment dependence of surface phonon modes of gallium arsenide nanowires as measured by Raman spectroscopy
Nanotechnology 19, 435704 (2008)
D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral
The use of molecular beam epitaxy for the synthesis of high purity III–V nanowires
J. Phys.: Condens. Matter 20, 454225 (2008)
D. Spirkoska, C. Colombo, M. Heiß, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Transmission of light generated in a Silicon Photonic Crystal Nanocavity through a Lateral Waveguide
No Reference given. (2008)
D. Dorfner, S. Iwamoto, M. Nomura, S. Nakayama, J. Finley, G. Abstreiter, Y. Arakawa
Controlling the surface density of DNA on gold by electrically induced desorption
Biosensors and Bioelectronics 23, 326-331 (2007)
K. Arinaga, U. Rant, J. Knezevic, E. Pringsheim, M. Tornow, S. Fujita, G. Abstreiter, N. Yokoyama
Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells
Appl. Phys. Lett. 91, 142120 (2007)
S. Dasgupta, C. Knaak, J. Moser, M. Bichler, S. F. Roth, A. Fontcuberta i Morral, G. Abstreiter
Online Ref
Guided self assembly of InAs quantum dots on a cleaved facet
Mater. Res. Soc. Symp. Proc. 959 M-16-02 (2007)
E. Uccelli, D. Schuh, J. Bauer, M. Bichler, J. Finley, M. Grayson, G. Abstreiter, A. Fontcuberta i Morral
Metallic and insulating states at a bent quantum Hall junction
Phys. Rev. B 76, 201304 (2007)
M. Grayson, L. Steinke, D. Schuh, M. Bichler, L. Hoeppel, J. Smet, K. V. Klitzing, D. K. Maude, G. Abstreiter
Novel one-dimensional states in a bent quantum hall junction
Intern. Journal of Modern Physics B 21, 1207-1208 (2007)
M. Grayson, L. Steinke, M. Huber, D. Schuh, M. Bichler, G. Abstreiter, L. Hoeppel, J. Smet, K. V. Klitzing, D. K. Maude
Observation of extremely slow hole spin relaxation in self-assembled quantum dots
Phys. Rev. B 76, 241306 (2007)
D. Heiss, S. Schaeck, H. Huebl, M. Bichler, G. Abstreiter, J. J. Finley, D. V. Bulaev, D. Loss
Optical characterization of silicon on insulator photonic crystal nanocavities infiltrated with colloidal PbS quantum dots
Appl. Phys. Lett. 91, 233111 (2007)
D. F. Dorfner, T. Hürlimann, G. Abstreiter, J. J. Finley
pH Sensitivity of Gallium Arsenide (GaAs) Electrodes Functionalized with Methy-Mercaptobiphenyl Monolayers
J. Phys. Chem. C. 111, 12414-12419 (2007)
D. Gassull, S. M. Luber, A. Ulman, M. Grunze, M. Tornow, G. Abstreiter, M. Tanaka
Subnanosecond ellipticity detector for laser radiation
Appl. Phys. Lett. 91, 91101 (2007)
S. D. Ganichev, J. Kiermaier, W. Weber, S. N. Danilov, D. Schuh, C. Gerl, W. Wegscheider, W. Prettl, D. Bougeard, G. Abstreiter
Switchable DNA interfaces for the highly sensitive detection of label-free DNA targets
Proc. Nat. Acad. Sci. Am. 104 44, 17364–17369 (2007)
U. Rant, K. Arinaga, S. Scherer, E. Pringsheim, S. Fujita, N. Yokoyama, M. Tornow, G. Abstreiter
Adjustable mode coupling in spatially coincident one-dimensional electron systems
Physica E 34, 568-571 (2006)
S. F. Fischer, G. Apetrii, U. Kunze, D. Schuh, G. Abstreiter
Clustering in a Precipitate-Free GeMn Magnetic Semiconductor
Phys. Rev. Lett. 97, 237202 (2006)
D. Bougeard, S. Ahlers, A. Trampert, N. Sircar, G. Abstreiter
Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule
Phys. Rev. B 74, 121305 (2006)
T. Nakaoka, E. C. Clark, H. J. Krenner, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, J. J. Finley
Dissimilar Kinetic Behavior of Electrically Manipulated Single-and Double-Stranded DNA Tethered to a Gold Surface
Biophysical Journal 90, Vol. 90, 3666-3671 (2006)
U. Rant, K. Arinaga, M. Tornow, Y. W. Kim, R. R. Netz, S. Fujita, N. Yokoyama, G. Abstreiter
Electrical Manipulation of Oligonucleotides Grafted to Charged Surfaces
Organic and Biomolecular Chemistry 4, 3448-4355 (2006)
U. Rant, K. Arinaga, S. Fujita, N. Yokoyama, G. Abstreiter, M. Tornow
Energy spectroscopy of controlled coupled quantum-wire states
Nature Physics 2, 91-96 (2006)
S. F. Fischer, G. Apetrii, U. Kunze, D. Schuh, G. Abstreiter
Ferromagnetic Ge(Mn) nanostructures
Physica E 32, 422-425 (2006)
S. Ahlers, D. Bougeard, H. Riedl, G. Abstreiter, A. Trampert, W. Kipferl, M. Sperl, A. Bergmaier, G. Dollinger
Magnetic and structural properties of GexMn1-x films: Precipitation of intermetallic nanomagnets
Phys. Rev. B 74, 214411 (2006)
S. Ahlers, D. Bougeard, N. Sircar, G. Abstreiter
Optically Probing Spin and Charge Interactions in a Tunable Artificial Molecule
Phys. Rev. Lett. 97, 76403 (2006)
H. J. Krenner, E. C. Clark, T. Nakaoka, M. Bichler, C. Scheurer, G. Abstreiter, J. J. Finley
Probing the subband structure of dual electron wave guides
Phase Transitions 79, 815-825 (2006)
S. F. Fischer, G. Apetrii, U. Kunze, D. Schuh, G. Abstreiter
Silicon-on-Insulator Microfluidic device with monolithic sensor integration for µ TAS applications
IEEE-JMEMS 15, 308-313 (2006)
S. Sharma, K. Buchholz, U. Rant, M. Tornow, G. Abstreiter
The role of surface-charging during the co-adsorption of mercaptohexanol to DNA-layers on gold: direct observation of desorption and layer re-orientation
Langmuir 22, 5560-5562 (2006)
K. Arinaga, U. Rant, M. Tornow, S. Fujita, G. Abstreiter, N. Yokoyama
Tunnel-coupled one-dimensional electron systems with large subband separations
Phys. Rev. B 74, 115324 (2006)
S. F. Fischer, G. Apetrii, U. Kunze, D. Schuh, G. Abstreiter
Tunneling spectroscopy of Landau band gaps at a quantum Hall line junction with adjustable Fermi level
Phys. Rev. B 73, 205305 (2006)
M. Habl, M. Reinwald, W. Wegscheider, M. Bichler, G. Abstreiter
Wave-function mixing in strongly confined tunnel-coupled quantum point contacts
Physica E 34, 526-529 (2006)
G. Apetrii, S. F. Fischer, U. Kunze, D. Schuh, G. Abstreiter
Aluminium arsenide cleaved-edge overgrown quantum wires
Appl. Phys. Lett. 87, 52101 (2005)
J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini
Aluminum arsenide cleaved-edge overgrown quantum wires
Appl. Phys. Lett. 87, 52101 (2005)
J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini
Controlled positioning of self-assembled InAs quantum dots on (110) GaAs
Physica E 26, 72-76 (2005)
D. Schuh, J. Bauer, E. Uccelli, R. Schulz, A. Kress, F. Hofbauer, J. Finley, G. Abstreiter
Online Ref
Corner overgrowth: Bending a high mobility two-dimensional electron system by 90º
Appl. Phys. Lett. 86, 32101 (2005)
M. Grayson, D. Schuh, M. Huber, M. Bichler, G. Abstreiter
Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy
Journal of Appl. Phys. 98, 113517 (2005)
P. H. Tan, D. Bougeard, G. Abstreiter, K. Brunner
Design and optimization of vertical CEO-T-FETs with atomically precise ultrashort gates by simulation with quantum transport models
in: proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 1501-1502 (2005)
J. Höntschel, W. Klix, R. Stenzel, F. Ertl, G. Abstreiter
Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
Phys. Rev. Lett. 94, 57402 (2005)
H. J. Krenner, M. Sabathil, E. C. Clark, A. Kress, D. Schuh, M. Bichler, G. Abstreiter, J. J. Finley
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer
12 (2005)
O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S. K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert
Field-effect induced mid-infrared intersubband electroluminescence of quantum wire cascade structures
in: proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 443-444 (2005)
S. Schmult, T. Herrle, H. P. Tranitz, M. Reinwald, W. Wegscheider, M. Bichler, D. Schuh, G. Abstreiter
Investigation of cavity modes and direct observation of Purcell enhancement in 2D photonic crystal defect microcavities
Physica E 26, 351-355 (2005)
A. Kress, F. Hofbauer, N. Reinelt, H. J. Krenner, M. Bichler, D. Schuh, R. Meyer, G. Abstreiter, J. J. Finley
Magnetotransport spectroscopy of mode coupling in electron wave guides
in: proc. of 27th International Conference on the Physics of Semiconductors 772, 923-924 (2005)
G. Apetrii, S. F. Fischer, U. Kunze, D. Schuh, G. Abstreiter
Magnetotransport spectroscopy of spatially coincident coupled electron waveguides
Phys. Rev. B 71, 195330 (2005)
S. F. Fischer, G. Apetrii, U. Kunze, D. Schuh, G. Abstreiter
Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
Appl. Phys. Lett. 86, 192106 (2005)
F. Fischer, D. Schuh, M. Bichler, G. Abstreiter, M. Grayson, K. Neumaier
Negative differential conductance in cleaved edge overgrown surface superlattices
in: proc. of 27th International Conference on the Physics of Semiconductors 772, 900-901 (2005)
T. Feil, H. P. Tranitz, M. Reinwald, W. Wegscheider, M. Bichler, D. Schuh, G. Abstreiter, S. J. Allen
Physics and growth of Si-doped two-dimensional high mobility hole gases on (110) oriented GaAs
in: proc. of 27th International Conference on the Physics of Semiconductors 772, 443-444 (2005)
F. Fischer, M. Grayson, D. Schuh, M. Bichler, G. Abstreiter
Progress towards single spin optoelectronics using quantum dot nanostructures
sol. stat. comm. 135, 591-601 (2005)
D. Heiss, M. Kroutvar, J. J. Finley, G. Abstreiter
Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement
Proc. of 27th International Conference on the Physics of Semiconductors 772, 898-899 (2005)
R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, D. Schuh, M. Bichler, S. Birner, P. Vogl, G. Abstreiter
Raman scattering of folded acoustic phonons in self – assembled Si/Ge dot superlattices
Chinese Journal of light scattering 17, 312-314 (2005)
P. H. Tan, D. Bougeard, G. Abstreiter, K. Brunner
Recent advances in exciton-based quantum information processing in quantum dot nanostructures
New Journal of Physics 7, 184 (2005)
H. J. Krenner, S. Stufler, M. Sabathil, E. C. Clark, P. Ester, M. Bichler, G. Abstreiter, J. J. Finley, A. Zrenner
Recent advances in exciton-based quantum information processing in quantum dot nanostructures
New Journal of Physics 7, 184 (2005)
H. J. Krenner, S. Stufler, M. Sabathil, E. C. Clark, P. Ester, M. Bichler, G. Abstreiter, J. J. Finley, A. Zrenner
Silicon-on-insulator based thin-film resistor for chemical and biological sensor applications
Chem. Phys. Chem. 4, 1104-1106 (2005)
M. G. Nikolaides, S. Rauschenbach, S. Luber, K. Buchholz, M. Tornow, G. Abstreiter, A. R. Bausch
Structure of a single sharp quantum Hall edge probed by momemtum-resolved tunneling
Phys. Rev. Lett. 94, 16805 (2005)
M. Huber, M. Grayson, M. Rother, W. Biberacher, W. Wegscheider, G. Abstreiter
Towards a new quantum wire structure realizable by double cleaved-edge overgrowth: Characterizing the transfer potential
in: proc. of 27th International Conference on the Physics of Semiconductors 772, 915-916 (2005)
S. F. Roth, M. Grayson, M. Bichler, D. Schuh, G. Abstreiter
Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (001) substrate by molecular beam epitaxy
Appl. Surface Science 228, 306-312 (2004)
J. W. Lee, D. Schuh, M. Bichler, G. Abstreiter
Anomalous-filling-factor-dependent nuclear-spin polarization in a 2D electron system
Phys. Rev. Lett. 92, 86802 (2004)
J. M. Smet, R. A. Deutschmann, F. Ertl, W. Wegscheider, G. Abstreiter, K. V. Klitzing
Atomically precise modulated two-dimensional electron gas exhibiting stable negative differential resistance
Physica E 22, 733-736 (2004)
T. Feil, B. Rieder, W. Wegscheider, J. Keller, M. Bichler, D. Schuh, G. Abstreiter
Dynamic electrical switching of DNA layers on a metal surface
Nano Lett. 4, 2441-2445 (2004)
U. Rant, K. Arinaga, S. Fujita, N. Yokoyama, G. Abstreiter, M. Tornow
Dynamics of optically stored charges in InGaAs quantum dots
Physica E 21, 886-891 (2004)
Y. Ducommun, M. Kroutvar, J. J. Finley, M. Bichler, A. Zrenner, G. Abstreiter
Experimental demonstration of a sharp quantum Hall edge
Physica E 25, 212-218 (2004)
M. Grayson, M. Huber, M. Rother, W. Bicheracher, W. Wegscheider, M. Bichler, G. Abstreiter
Fabrication of double quantum dots by combining afm and e-beam lithography
Physica E 21, 483-486 (2004)
M. C. Rogge, C. Fühner, U. F. Keyser, M. Bichler, G. Abstreiter, W. Wegscheider, R. J. Haug
Heterostructures overgrown on GaAs corner substrates
Physica E 23, 293-297 (2004)
D. Schuh, M. Grayson, M. Bichler, G. Abstreiter
Liquid phase sensors based on chemically functionalized GaAs/AlGaAs heterostructures
Physica E 21, 1111-1115 (2004)
S. M. Luber, K. Adlkofer, U. Rant, A. Ulmann, A. Gölzhäuser, M. Grunze, D. Schuh, M. Tanaka, M. Tornow, G. Abstreiter
Localization of fractionally charged quasi-particles
Science 305, 980-983 (2004)
J. Martin, S. Ilani, B. Verdene, J. Smet, V. Umansky, D. Mahalu, D. Schuh, G. Abstreiter, A. Yacoby
Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition
Physica E 21, 779-782 (2004)
I. Bormann, K. Brunner, S. Hackenbuchner, H. Riedl, S. Schmult, W. Wegscheider, G. Abstreiter
Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs
Appl. Phys. Lett. 85, 4750-4752 (2004)
J. Bauer, D. Schuh, E. Uccelli, R. Schulz, A. Kress, F. Hofbauer, J. Finley, G. Abstreiter
Online Ref
Long-range ordered self-assembled InAs quantum dots on (110) GaAs grown with Molecular Beam Epitaxy
(2004)
D. Schuh, J. Bauer, R. Schulz, E. Uccelli, F. Hofbauer, A. Kress, J. Finley, G. Abstreiter
Mid infrared emission of quantum wire cascade structures
Physica E 21, 223-229 (2004)
S. Schmult, I. Keck, T. Herrle, W. Wegscheider, A. P. Mayer, M. Bichler, D. Schuh, G. Abstreiter
Morphology and optical properties of InAs(N) quantum dots
Journ. of Appl. Phys. 96, 2832-2840 (2004)
O. Schumann, L. Geelhaar, H. Riechert, H. Cerva, G. Abstreiter
New anisotropic behaviour of quantum Hall resistance in (1 1 0) GaAs heterostructures at mK temperatures and fractional filling factors
Physica E 22, 108-110 (2004)
F. Fischer, E. Schuberth, D. Schuh, M. Bichler, G. Abstreiter
Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers
Semicond. Sci. Technol. 19, S342-S344 (2004)
G. Scarpa, P. Lugli, N. Ulbrich, G. Abstreiter, M. C. Amann, M. Manenti, F. Compagnone, A. D. Carlo
Observation of electrostatically released DNA from gold electrodes with controlled threshold voltages
J. Chem. Phys. 120, 5501-5504 (2004)
S. Takeishi, U. Rant, T. Fujiwara, K. Buchholz, T. Usuki, K. Arinaga, K. Takemoto, Y. Yamaguchi, M. Tornow, S. Fujita, G. Abstreiter, N. Yokoyama
Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth
phys. stat. sol. (c) 1, 2028 (2004)
R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, G. Schedelbeck, S. Sedlmaier, M. Stopa, S. Birner, P. Vogl, J. Bauer, D. Schuh, M. Bichler, G. Abstreiter
Optically programmable electron spin memory using semiconductor quantum dots
Nature 432, 81-84 (2004)
M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley
Photoluminescence of one-dimensional electron gases in cleaved-edge overgrowth quantum wires
phys. stat. sol. (b) 241, No. 5, 1041-1045 (2004)
C. Kristukat, A. R. Goni, M. Bichler, W. Wegscheider, G. Abstreiter, C. Thomsen
Probing the electrostatics of integer quantum hall edges with momentum-resolved tunnel spectroscopy
Physica E 22, 164-167 (2004)
M. Huber, M. Grayson, D. Schuh, M. Bichler, W. Biberacher, W. Wegscheider, G. Abstreiter
Quantum Hall effect in a two-dimensional electron system bent by 90º
Physica E 22, 181-184 (2004)
M. Grayson, D. Schuh, M. Bichler, M. Huber, G. Abstreiter, L. Hoeppel, J. Smet, K. V. Klitzing
Quantum-confined Stark shifts of charged exciton complexes in quantum dots
Phys. Rev. B 70, 201308 (2004)
J. J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A. I. Tartakovskii, D. J. Mowbray, S. Skolnick, S. L. Liew, A. G. Cullis, M. Hopkinson
Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices
Appl. Phys. Lett. 84, 2632-2634 (2004)
P. H. Tan, D. Bougeard, G. Abstreiter, K. Brunner
Redistribution dynamics of optically generated charges in In(Ga)As/GaAs self-assembled quantum dots
Appl. Phys. Lett. 85, 2592-2594 (2004)
Y. Ducommun, M. Kroutvar, M. Reimer, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley
Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
Physica E 21, 312-316 (2004)
D. Bougeard, P. H. Tan, M. Sabathil, P. Vogl, G. Abstreiter, K. Brunner
Resonant tunneling between parallel 1D quantum wires and adjoining 2D electron reservoirs
Physica E 22, 292-295 (2004)
F. Ertl, S. Roth, D. Schuh, M. Bichler, G. Abstreiter
Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires
Appl. Phys. Lett. 85, 3672-3674 (2004)
R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, D. Schuh, M. Bichler, G. Abstreiter
Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures
Physica E 21, 236-240 (2004)
R. Schuster, H. Hajak, M. Reinwald, W. Wegscheider, D. Schuh, M. Bichler, G. Abstreiter
Structural properties of oligonucleotide monolayers on gold surfaces probed by fluorescence investigations
Langmuir 20, 10086-10092 (2004)
U. Rant, K. Arinaga, S. Fujita, N. Yokoyama, G. Abstreiter, M. Tornow
Temperature-induced broadening of the emission lines from a quantum-dot nanostructure
Physica E 24, 272-277 (2004)
V. M. Apalkov, T. Chakraborty, N. Ulbrich, D. Schuh, J. Bauer, G. Abstreiter
The structure and dispersion of a sharp quantum hall edge probed by momentum-resolved tunneling
Adv. in Solid State Phys. 44, 213-225 (2004)
M. Huber, M. Grayson, M. Rother, W. Biberacher, W. Wegscheider, G. Abstreiter
Transport in weakly and strongly modulated two-dimensional electron systems realized by cleaved-edge-overgrowth
phys. stat. sol. 1, 2111 (2004)
T. Feil, R. A. Deutschmann, W. Wegscheider, M. Rother, D. Schuh, M. Bichler, G. Abstreiter, B. Rieder, J. Keller
Vertical-mode dependence of coupling between an electron waveguide and reservoirs with two occupied subbands
Physica E 22, 398-401 (2004)
G. Apetrii, S. F. Fischer, U. Kunze, D. Schuh, G. Abstreiter
Aharonov-Bohm effect of a quantum ring in the Kondo regime
phys. stat. sol. (b) 238, 331-334 (2003)
U. F. Keyser, C. Fuhner, R. J. Haug, W. Wegscheider, M. Bichler, G. Abstreiter
Anisotropic high-mobility quantum Hall transport: two-dimensional electrons subject to few millikelvins and misoriented substrates
in: Physics of Semiconductors 2002, Institute of Physics Conference Series 171, eds.: A. R. Long, and J. H. Davies, Institute of Physics Publishing Bristol, E2.2 (2003)
F. Ertl, O. Jaeger, R. A. Deutschmann, M. Bichler, G. Abstreiter, E. Schuberth, C. Probst, W. Wegscheider
Coherent and incoherent properties of single quantum dot photodiodes
Physica E 16, 59-67 (2003)
E. Beham, A. Zrenner, S. Stufler, F. Findeis, M. Bichler, G. Abstreiter
Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots
Appl. Phys. Lett. 83, 1163-1165 (2003)
M. C. Rogge, C. Fühner, U. F. Keyser, R. J. Haug, M. Bichler, G. Abstreiter, W. Wegscheider
Electrically tunable mid-infrared electroluminescence from graded cascade structures
Appl. Phys. Lett. 83, 3015-3017 (2003)
Y. B. Vasilyev, V. A. Solov`ev, B. Y. Meltser, A. N. Semenov, S. V. Ivanov, P. S. Kop`ev, N. Ulbrich, G. Abstreiter, M. C. Amann, S. Schmult, W. Wegscheider
Excessive counterion condensation on immobilized ssDNA in solutions of high ionic strength
Biophysical Journal 85, 3858-3864 (2003)
U. Rant, K. Arinaga, T. Fujiwara, S. Fujita, M. Tornow, N. Yokoyama, G. Abstreiter
Femtosecond buildup of screening and collective effects in photoexcited GaAs: How bare charges get dressed
in: Physics of Semiconductors 2002, Institute of Physics Conference Series 171, eds.: A.R. Long and J. H. Davies, Institute of Physics Publishing Bristio and Philadelphia, 93-100 (2003)
F. Tauser, R. Huber, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer
Field-effect-induced midinfrared electroluminescence of a quantum-wire-cascade structure by remote ?-doping
Appl. Phys. Lett. 83, 1909-1911 (2003)
S. Schmult, I. Keck, T. Herrle, W. Wegscheider, M. Bichler, D. Schuh, G. Abstreiter
Intraband photoresponse of SiGe quantum dot/quantum well multilayers
Physica E 16, 609-613 (2003)
D. Bougeard, K. Brunner, G. Abstreiter
Kondo effect in a few-electron quantum ring
Phys. Rev. Lett. 90, 196601-1 (2003)
U. F. Keyser, C. Fühner, S. Borck, R. J. Haug, M. Bichler, G. Abstreiter, W. Wegscheider
Local structure of Ge/Si nanostructures: uniqueness of XAFS spectroscopy
Nuclear Instruments and Methods, 199, 174-178 (2003)
A. V. Kolobov, H. Oyanagi, A. Frenkel, I. Robinson, J. Cross, S. Wei, G. Abstreiter, Y. Maeda, A. Shklyaev, M. Ichikawa, S. Yamasaki, K. Tanaka
Low-loss GaInAs-based waveguides for high-performance 5.5 mu m InP-based quantum cascade lasers
IEE Proceedings-Optoelectronics 150, 284-287 (2003)
G. Scarpa, N. Ulbrich, G. Böhm, G. Abstreiter, M. C. Amann
Mid-infrared electroluminescence from device with changeable electron-hole distance
Electronics Lett. 39, 108-110 (2003)
Y. B. Vasilyev, V. A. Solov`ev, B. Y. Meltser, A. N. Semenov, S. V. Ivanov, P. S. Kop`ev, N. Ulbrich, G. Abstreiter, M. C. Amann
Midinfrared intraband electroluminescence from AllnAs quantum dots
Appl. Phys. Lett. 83, 1530-1532 (2003)
N. Ulbrich, J. Bauer, G. Scarpa, R. Boy, D. Schuh, G. Abstreiter, S. Schmult, W. Wegscheider
Momentum resolved tunnel spectroscopy of integer quantum Hall edges: A tool for measuring
ICPS-26 Proceedings, Institute of Physics Conference Series Number 171, M2.3 (2003)
M. Grayson, M. Rother, W. Biberacher, W. Wegscheider, M. Bichler and G. Abstreiter
Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures
Appl. Phys. Lett. 83, 5371-5373 (2003)
I. Bormann, K. Brunner, S. Hackenbuchner, G. Abstreiter, S. Schmult, W. Wegscheider
Prospects of quantum cascade lasers with GaInAs Waveguides
Adv. in Solid State Phys. 43, 301-312 (2003)
N. Ulbrich, G. Scarpa, G. Abstreiter, M. C. Amann
Rabi-flopping of the ground state excition in a single self-assembled quantum dot
phys. stat. sol. (b) 238, 366-369 (2003)
E. Beham, A. Zrenner, F. Findeis, M. Bichler, G. Abstreiter
Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots
Phys. Rev. B 68, 125302 (2003)
P. H. Tan, K. Brunner, D. Bougeard, G. Abstreiter
Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
Superlattices and Microstructures 33, 271-278 (2003)
V. T. Dolgopolov, E. V. Deviatov, A. A. Shashkin, U. Wieser, U. Kunze, G. Abstreiter, K. Brunner
Size and density estimation of self-assembled InAs quantum dots on GaAs(001) substrate through the analysis of RHEED patterns
phys. stat. sol. (c) 0, No.4, 1121-1124 (2003)
J. W. Lee, D. Schuh, M. Bichler, G. Abstreiter
Spin-photocurrent in p-SiGe quantum wells under terahertz laser irradiation
Journal of Superconductivity 16, 415-418 (2003)
V. V. Bel`kov, S. D. Ganichev, P. Schneider, D. Schowalter, U. Rossler, W. Prettl, E. L. Ivchenko, R. Neumann, K. Brunner, G. Abstreiter
The single quantum dot photodiode – a two-level system with electric contacts
Adv. in Solid State Phys. 43, 287-300 (2003)
E. Beham, A. Zrenner, S. Stufler, F. Findeis, M. Bichler, G. Abstreiter
Tunable single and dual mode operation of an external cavity quantum-dot injection laser
J. Phys. D: Appl. Phys. 36, 3-Jan (2003)
A. Biebersdorf, C. Lingk, M. D. Giorgi, J. Feldmann, J. Sacher, M. Arzberger, C. Ulbrich, G. Böhm, M. C. Amann, G. Abstreiter
Ultrafast coherent and incoherent dynamics of intersubband excitations in semiconductor quantum wells
Proceedings of SPIE 4992, 154-164 (2003)
T. Elsässer, R. A. Kaindl, F. Eickemeyer, K. Reimann, M. Woerner, R. Hey, C. Miesner, K. Brunner, G. Abstreiter
Ultrafast formation of many-particle interactions in a photoexcited electron-hole plasma
Proceedings of SPIE 4992, 130-137 (2003)
R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer
Wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots
Appl. Phys. Lett. 83, 443-445 (2003)
M. Kroutvar, Y. Ducommun, J. J. Finley, M. Bichler, G. Abstreiter, A. Zrenner
Wavelength selective data storage in InGaAs-GaAs quantum dots
phys. stat. sol. (b) 238, 345-348 (2003)
M. Kroutvar, A. Zrenner, Y. Ducommun, J. J. Finley, G. Abstreiter
A quantum dot infrared photodetector with lateral carrier transport
Physica E 13, 301-304 (2002)
L. Chu, A. Zrenner, D. Bougeard, M. Bichler, G. Abstreiter
Aharonov-Bohm oscillations of a tuneable quantum ring
Sem. Science and Technology 17, L22-L24 (2002)
U. F. Keyser, S. Borck, R. J. Haug, M. Bichler, G. Abstreiter, W. Wegscheider
Band-gap renormalization of modulation-doped quantum wires
Phys. Rev. B 65, 201304-1 (2002)
S. Sedlmaier, M. Stopa, G. Schedelbeck, W. Wegscheider, G. Abstreiter
Circular photogalvanic effect in SiGe semiconductor quantum wells
Mat. Res. Soc. Symp. Proc. 690, F3.11.1-F3.11.6 (2002)
S. D. Ganichev, F. P. Kalz, U. Rössler, W. Prettl, E. L. Ivchenko, V. V. Bel`kov, R. Neumann, K. Brunner, G. Abstreiter
Coherent properties of a two-level system based on a quantum-dot photodiode
Nature 418, 612-614 (2002)
A. Zrenner, E. Beham, S. Stufler, F. Findeis, M. Bichler, G. Abstreiter
Device characterictics of vertical field effect transistors with ultra-short InGaAs/GaAs channels
in: Compound Semiconductors 2001, Institute of Physics Conference Series 170, eds.: Y. Arakawa, Y. Hirayama, K. Kishino, and H. Yamaguchi, Institute of Physics Publishing Bristol, 295- (2002)
F. Ertl, R. A. Deutschmann, D. Schuh, M. Bichler, G. Abstreiter
Effect of the interface on the local structure of Ge-Si nanostructures
J. Vac. Sci. Technol. A 20, 1116-1119 (2002)
A. V. Kolobov, H. Oyanagi, K. Brunner, G. Abstreiter, Y. Maeda, A. A. Shklyaev, S. Yamasaki, M. Ichikawa, K. Tanaka
Efficient light emission at 1.54 µm from Er in Si excited by hot electron injection through thin suboxide layers
J. of Appl. Phys. 91, 9764-9771 (2002)
M. Markmann, A. Sticht, F. Bobe, G. Zandler, K. Brunner, G. Abstreiter, E. Müller
Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density
Phys. Chem. Chem. Physics 4, 785-790 (2002)
K. Adlkofer, E. Duijs, F. Findeis, A. Zrenner, E. Sackmann, G. Abstreiter, M. Tanaka
Femtosecond buildup of Coulomb screening in a photoexcited electron-hole plasma
Physica B 314, 248-254 (2002)
A. Leitenstorfer, R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter
Femtosecond intersubband scattering of holes in Si1-xGex/Si quantum wells
Physica B 314, 255-258 (2002)
R. A. Kaindl, M. Wörner, M. Wurm, K. Reimann, T. Elsässer, C. Miesner, K. Brunner, G. Abstreiter
Femtosecond optical response of Exciton – LO phonon quasiparticles in GaAs
phys. stat. sol. (b) 231, No.1, 181-186 (2002)
M. Betz, G. Göger, A. Leitenstorfer, R. Zimmermann, M. Bichler, W. Wegscheider, G. Abstreiter
Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor
Nature 415, 281-286 (2002)
J. H. Smet, R. A. Deutschmann, F. Ertl, W. Wegscheider, G. Abstreiter, K. V. Klitzing
Ge quantum dots in Si: self-assembly, stacking and level spectroscopy
Physica E 13, 1018-1021 (2002)
K. Brunner, M. Herbst, D. Bougeard, C. Miesner, T. Asperger, C. Schramm, G. Abstreiter
Ge-Si nanostructures for quantum-effect electronic devices
Microscopy of Semiconducting Materials 2001 Insitute of Physics Conference Series 169, 167-176 (2002)
F. Ernst, O. Kienzle, O. G. Schmidt, K. Eberl, J. Zhu, K. Brunner, G. Abstreiter
High-performance 5.5µm quantum cascade lasers with high-reflection coating
IEE Proc.-Optoelectron. 149, 201-205 (2002)
G. Scarpa, N. Ulbrich, J. Roßkopf, G. Böhm, G. Abstreiter, M. C. Amann
Hole transport in SiGe channels on step-bunched vicinal Si surfaces
Physica E 13, 986-989 (2002)
R. Neumann, K. Brunner, G. Abstreiter
Improved large optical cavity design for 10.6 µm (Al)GaAs quantum cascade lasers
Physica E 13, 844-847 (2002)
G. Scarpa, N. Ulbrich, A. Sigl, M. Bichler, D. Schuh, M. C. Amann, G. Abstreiter
Intersubband staircase laser
Appl. Phys. Lett. 80, 4312-4314 (2002)
N. Ulbrich, G. Scarpa, G. Böhm, G. Abstreiter, M. C. Amann
Intersubband transitions of boron-doped self-assembled Ge quantum dots
Physica E 13, 1022-1025 (2002)
T. Fromherz, W. Mac, C. Miesner, K. Brunner, G. Bauer, G. Abstreiter
Intraband absorption and photocurrent spectroscopy of self-assembled p-type Si/SiGe quantum dots
Appl. Phys. Lett. 80, 2093-2095 (2002)
T. Fromherz, W. Mac, A. Hesse, G. Bauer, C. Miesner, K. Brunner, G. Abstreiter
Lateral variation of the electron density across a Hall bar in high electric and magnetic fields
Phys. Rev. B 65, 165307 (2002)
J. Frankenberger, A. Zrenner, M. Bichler, G. Abstreiter
Level bleaching in a single quantum dot observed by photocurrent spectroscopy
Physica E 13, 139-142 (2002)
E. Beham, A. Zrenner, F. Findeis, M. Bichler, G. Abstreiter
Local structure of Ge quantum dots self-assembled on Si(100) probed by x-ray absorption fine-structure spectroscopy
Phys. Rev. B 66, 75319 (2002)
A. V. Kolobov, H. Oyanagi, S. Wei, K. Brunner, G. Abstreiter
Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures
Applied Physics Letters 80 (2002)
I. Bormann, K. Brunner, S. Hackenbuchner, G. Zandler, G. Abstreiter, S. S. Wegscheider
Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures
Appl. Phys. Lett. 80, 2260-2262 (2002)
I. Bormann, K. Brunner, S. Hackenbuchner, G. Zandler, G. Abstreiter
Miniband transport in vertical superlattice field effect transistors
Physica E 12, 281-284 (2002)
R. A. Deutschmann, W. Wegscheider, M. Rother, M. Bichler, G. Abstreiter
Morphological transformation of InyGa1-yAs islands, fabricated by Stranski-Krastanov growth
Materials Science and Engineering B 88, 225-229 (2002)
A. Lorke, R. Blossey, J. M. Garcia, M. Bichler, G. Abstreiter
Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces
Phys. Rev. B 65, 85314 (2002)
M. Betz, G. Göger, A. Leitenstorfer, M. Bichler, G. Abstreiter, W. Wegscheider
Novel Si/Ge quantum dot mid-infrared photodetector structures with in-plane transport
in: Compound Semiconductors 2001, Institute of Physics Conference Series 170, eds.: Y. Arakawa, Y. Hirayama, K. Kishino, and H. Yamaguchi, Institute of Physics Publishing Bristol, 589- (2002)
D. Bougeard, K. Brunner, G. Abstreiter
Optically detected single-electron charging in a quantum dot
Physica E 13, 95-100 (2002)
A. Zrenner, F. Findeis, M. Baier, M. Bichler, G. Abstreiter, U. Hohenester, E. Molinari
Removal of spin degeneracy in p-SiGe quantum wells proved by spin photocurrents
Phys. Rev. B 66, 75328 (2002)
S. D. Ganichev, U. Rössler, W. Prettl, E. L. Ivchenko, V. V. Bel`kov, R. Neumann, K. Brunner, G. Abstreiter
Silicon/silicon suboxide heterostructures grown by molecular beam epitaxy
Materials Science and Engineering B 89, 274-278 (2002)
A. Sticht, M. Markmann, K. Brunner, G. Abstreiter, E. Müller
Structural and optical properties of vertically correlated Ge island layers grown at low temperatures
Materials Science and Engineering B 89, 54-57 (2002)
M. Herbst, C. Schramm, K. Brunner, T. Asperger, H. Riedl, G. Abstreiter, A. Vörckel, H. Kurz, E. Müller
Thin SiOx layers embedded in single crystalline silicon
Physica E 13, 978-981 (2002)
A. Sticht, M. Markmann, K. Brunner, G. Abstreiter
Tunneling in the quantum Hall regime between orthogonal quantum wells
Physica E 12, 125-128 (2002)
M. Huber, M. Grayson, M. Rother, R. A. Deutschmann, W. Biberacher, W. Wegscheider, M. Bichler, G. Abstreiter
Two-color femtosecond spectroscopy of blue-shifted InAs/AlGaAs quantum dots
phys. stat. sol. (b) 233, No. 3, 401-407 (2002)
M. Betz, S. Trumm, A. Leitenstorfer, E. Beham, H. Krenner, M. Bichler, A. Zrenner, G. Abstreiter
Ultrafast intersubband scattering of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells
Physica E 13, 485-488 (2002)
M. Woerner, R. A. Kaindl, M. Wurm, K. Reimann, T. Elsaesser, C. Miesner, K. Brunner, G. Abstreiter
Ultrafast switch-off of an electrically pumped quantum-dot laser
Appl. Phys. Lett. 81, 1177-1179 (2002)
A. V. Platonov, C. Lingk, J. Feldmann, M. Arzberger, G. Böhm, M. C. Amann, G. Abstreiter
Vertical field effect transistors realized by cleaved-edge overgrowth
Physica E 13, 920-924 (2002)
F. Ertl, T. Asperger, R. A. Deutschmann, W. Wegscheider, M. Bichler, G. Böhm, G. Abstreiter
Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission
Journal of Appl. Phys. 89, 1180-1183 (2001)
J. Feldmann, S. T. Cundiff, M. Arzberger, G. Böhm, G. Abstreiter
Charging dynamics of self-assembled InAs quantum dots investigated by wavelength selective optically induced charge stroage measurements
Phys. stat. sol. (b) 224, 357-360 (2001)
D. Heinrich, J. Hoffmann, A. Zrenner, G. Böhm, G. Abstreiter
Commensurability effects in lateral surface-doped superlattices
Appl. Phys. Lett. 78, 2175-2177 (2001)
R. A. Deutschmann, C. Stocken, W. Wegscheider, M. Bichler, G. Abstreiter
Compositional analysis based on electron holography and a chemically sensitive reflection
Ultramicroscopy 88, 51-61 (2001)
A. Rosenauer, D. V. Dyck, M. Arzberger, G. Abstreiter
Compositional analysis based upon electron holography and a chemically sensitive reflection
Microscopy of Semiconducting Materials 2001, Institute of Physics Conference Series 169, 33-36 (2001)
A. Rosenauer, D. Gerthsen, D. V. Dyck, M. Arzberger, G. Böhm, G. Abstreiter
Continuous room-temperature operation of electrically pumped quantum-dot microcylinder lasers
Appl. Phys. Lett. 79, 1766-1768 (2001)
M. Arzberger, G. Böhm, M. C. Amann, G. Abstreiter
Dark pulse formation in a quantum-dot laser
Appl. Phys. Lett. 79, 18-20 (2001)
J. Zimmermann, S. T. Cundiff, G. V. Plessen, J. Feldmann, M. Arzberger, G. Böhm, M. C. Amann, G. Abstreiter
Electron and hole impact excitation of Er in MBE grown Si:O and Si1-yCy diodes
Materials Science and Engineering B 81, 109-112 (2001)
M. Markmann, R. Neumann, K. Brunner, G. Abstreiter
Epitaxial alloy films of zintl-phase Ca(Si1-xGex)(2)
JOURNAL OF CRYSTAL GROWTH 223 4 573-576 (2001)
G. Vogg, C. Miesner, M. S. Brandt, M. Stutzmann, G. Abstreiter
Excitation efficiency of electrons and holes in forward and reverse biased erbium doped Si-diodes grown by MBE
App. Phys. Lett. 78, 210 (2001)
M. Markmann, E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter
Femtosecond buildup of Coulomb screening in photoexcited GaAs probed via ultrabroadband THz spectroscopy
Journal of Luminescence 94-95, 555-558 (2001)
R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer
Gain characteristics of self-assembled InAs/GaAs quantum dots
phys. stat. sol. (b) 224, 827-831 (2001)
M. Arzberger, G. Böhm, M. C. Amann, G. Abstreiter
Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires
Phys. Rev. B. 63, 205318-1 - 205318-5 (2001)
V. Holý, T. Roch, J. Stangl, A. Daniel, G. Bauer, T. H. Metzger, Y. H. Zhu, K. Brunner, G. Abstreiter
High-temperature (T> 470 K) pulsed operation of 5.5µm quantum cascade lasers with high-reflection coating
Electronics Letters 37, 1341-1342 (2001)
N. Ulbrich, G. Scarpa, A. Sigl, J. Roßkopf, G. Böhm, G. Abstreiter, M. C. Amann
Hole emission from Ge/Si quantum dots studied by time-resolved capacitance spectroscopy
phys. stat. sol. (b) 224, 261-264 (2001)
C. M. A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter
How many-particle interactions develop after ultfrafast excitation of an electron-hole plasma
Nature 414, 286-289 (2001)
R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer
Influence of thiol coupling on photoluminescence of near surface InAs quantum dots
phys. stat. sol. (b) 224, 871-875 (2001)
E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, E. Sackmann
Intersubband photocurrent spectroscopy on self-assembled In(Ga)As/GaAs quantum dots
phys. stat. sol. (b) 224, 591-594 (2001)
L. Chu, A. Zrenner, M. Bichler, G. Böhm, G. Abstreiter
Investigation of In segregation in InAs/AlAs quantum-well structures
Appl. Phys. Lett. 79, 4426-4428 (2001)
M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, G. Abstreiter
Ising feromagnetism and domain morphology in the fractional quantum hall regime
Phys. Rev. Lett. 86, 2412-2415 (2001)
J. H. Smet, R. A. Deutschmann, W. Wegscheider, G. Abstreiter, K. V. Klitzing
Lateral photodetectors with Ge quantum dots in Si
Infrared Physics and Technology 42, 461-465 (2001)
C. Miesner, K. Brunner, G. Abstreiter
Local structure of Ge/Si (100) self-assembled quantum dots
Journal of China University of Science and Technology 31, 282-288 (2001)
A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, K. Tanaka
Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots
Appl. Phys. Lett. 78, 451-453 (2001)
A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, K. Tanaka
Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots studied by fluorescent X-ray absorption fine structure
Proc. of the 6th International Symposium on Advanced Physical Fields: Growth of Well-defined Nanostructures (2001)
A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, K. Tanaka
Magneto-optics on single quantum dots
Physica B 298, 239-245 (2001)
A. Zrenner, F. Findeis, M. Baier, M. Bichler, G. Abstreiter
Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs
Physica E 10, 57-61 (2001)
R. Meisels, K. Dybko, F. Ziouzia, F. Kuchar, R. Deutschmann, G. Abstreiter, G. Hein, K. Pierz
Miniband transport in vertical superlattice field-effect transistors
Appl. Phys. Lett. 79, 1564-1566 (2001)
R. A. Deutschmann, W. Wegscheider, M. Rother, M. Bichler, G. Abstreiter
Nonlinear ground-state absorption observed in a single quantum dot
Appl. Phys. Lett. 79, 2808-2810 (2001)
E. Beham, A. Zrenner, F. Findeis, M. Bichler, G. Abstreiter
Optical and magneto-optical investigartions on single-quantum dots
Physica E 9, 114-123 (2001)
A. Zrenner, F. Findeis, E. Beham, M. Markmann, G. Böhm, G. Abstreiter
Optical excitations of a self-assembled artificial ion
Phys. Rev. B 63, 121309-1-121309-4 (2001)
F. Findeis, M. Baier, A. Zrenner, M. Bichler, G. Abstreiter
Optical spectroscopy of charged excitons in single quantum dot photodiodes
Phys. Rev. B 64, 195326 (2001)
M. Baier, F. Findeis, A. Zrenner, M. Bichler, G. Abstreiter
Ordering and electronic properties of self-assembled Si/Ge quantum dots
J. Appl. Phys. 40, 1860-1865 (2001)
K. Brunner, G. Abstreiter
Phonon-assisted biexciton generation in a single quantum dot
phys. stat. sol. (b) 224, 337-341 (2001)
F. Findeis, A. Zrenner, G. Böhm, G. Abstreiter
Photocurrent and photoluminescence of a single self-assembled quantum dot in electric fields
Appl. Phys. Lett. 78, 2958-2960 (2001)
F. Findeis, M. Baier, E. Beham, A. Zrenner, G. Abstreiter
Photoluminescence and AFM Studies on Blue Shifted InAs/AlyGa1-yAs Quantum Dots
phys. stat. sol. (b) 224, 47-51 (2001)
E. F. Duijs, F. Findeis, A. Zrenner, M. Bichler, G. Abstreiter
Quantification of segregation and mass transport in InxGa1-xAs/GaAs Stranski-Krastanow layers
Phys. Rev. B 64, 245334 (2001)
A. Rosenauer, D. Gerthsen, D. V. Dyck, M. Arzberger, G. Böhm, G. Abstreiter
Quantum interference in artificial band structures
Phys. Rev. Lett. 86, 1857-1860 (2001)
R. A. Deutschmann, W. Wegscheider, M. Rother, M. Bichler, G. Abstreiter
Quantum-dot infrared photodetector with lateral carrier transport
Appl. Phys. Lett. 79, 2249-2251 (2001)
L. Chu, A. Zrenner, M. Bichler, G. Abstreiter
Self-Ordering of Ge islands on Si substrates mediated by local strain fields
phys. stat. sol. (b) 224, 531-535 (2001)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst
Simulation of vertical CEOFETs by a coupled solution of the Schrödingers equation with a hydrodynamic transport model
in: Simulation of Semiconductor Processes and Devices 2001, 222 (2001)
J. Höntschel, R. Stenzel, W. Klix, F. Ertl, R. A. Deutschmann, M. Bichler, G. Abstreiter
Space charge spectroscopy of self assembled Ge quantum dots in Si
phys. stat. sol. (b) 224, 237-240 (2001)
T. Asperger, C. Miesner, K. Brunner, G. Abstreiter
Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy
phys. stat. sol. (b) 224, 213-216 (2001)
A. Rosenauer, D. V. Dyck, D. Gerthsen, M. Arzberger, G. Böhm, G. Abstreiter
Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-Ray scattering
phys. stat. sol. (b) 224, 241-245 (2001)
T. Roch, V. Holý, J. Stangl, E. Höflinger, A. Daniel, G. Bauer, H. Metzger, J. Zhu, K. Brunner, G. Abstreiter
Time-resolved amplified spontaneous emission in InAs/GaAs quantum dots
phys. stat. sol. (b) 224, 475-480 (2001)
C. Lingk, G. V. Plessen, J. Feldmann, K. Stock, M. Arzberger, G. Böhm, M. C. Amann, G. Abstreiter
Vertical and lateral mid-infrared photocurrent study on Ge quantum dots in Si
phys. stat. sol. (b) 224, 605-608 (2001)
C. Miesner, K. Brunner, G. Abstreiter
X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy
Journal of Appl. Phys. 89, 4836-4842 (2001)
M. Meduna, V. Holý, T. Roch, J. Stangl, G. Bauer, J. Zhu, K. Brunner, G. Abstreiter
Admittance spectroscopy of Ge quantum dots in Si
Thin Solid Films 380, 227-229 (2000)
T. Asperger, C. Miesner, K. Brunner, G. Abstreiter
Breakdown of Shubnikov-de Haas oscillations in a short-period 1D lateral superlattice
Physica E 6, 561-564 (2000)
R. A. Deutschmann, A. Lorke, W. Wegscheider, M. Bichler, G. Abstreiter
Capacitance-voltage and admittance spectrocopy of self-assembled Ge islands in Si
Appl. Phys. Lett. 77, 2704-2706 (2000)
C. Miesner, T. Asperger, K. Brunner, G. Abstreiter
Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots
Appl. Phys. Lett. 76, 3507 (2000)
C. Lingk, G. V. Plessen, J. Feldmann, K. Stock, M. Arzberger, M. C. Amann, G. Abstreiter
Effective masses of electrons and holes in SiGe
„Properties of SiGe and SiGe:C“ eds.: E. Kasper 24, 144-148 (2000)
R. Neumann, G. Abstreiter
Electron and hole storage in self-assembled InAs quantum dots
Physica E 7, 484-488 (2000)
D. Heinrich, J. Hoffmann, J. J. Finley, A. Zrenner, G. Böhm, G. Abstreiter
Electronic inelastic light scattering in a periodic ?-doping GaAs multiple quantum well structure
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
C. Kristukat, A. R. Goni, S. Rutzinger, W. Wegscheider, G. Abstreiter, C. Thomsen
Evidence of Luttinger liquid behavior in GaAs/AlGaAs quantum wires
Physica E 6, 551-554 (2000)
M. Rother, W. Wegscheider, R. A. Deutschmann, M. Bichler, G. Abstreiter
Femtosecond spectroscopy of large-momentum excitons in GaAs
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
M. Betz, G. Göger, A. Leitenstorfer, M. Bichler, W. Wegscheider, G. Abstreiter
Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si superlattice
Phys. Rev. B 62, 7229-7236 (2000)
J. Stangl, V. Holý, T. Roch, A. Daniel, G. Bauer, J. Zhu, K. Brunner, G. Abstreiter
Intra-valence band photocurrent measurements on Ge quantum dots in Si
Thin Solid Films 380, 180-182 (2000)
C. Miesner, K. Brunner, G. Abstreiter
Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si
Appl. Phys. Lett. 76, 1027-1029 (2000)
C. Miesner, O. Röthig, K. Brunner, G. Abstreiter
Investigation of conductance fluctuations in quantum wires fabricated by cleaved edge overgrowth
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
F. Ertl, M. Rother, W. Wegscheider, R. A. Deutschmann, M. Bichler, G. Abstreiter
Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
Appl. Phys. Lett. 76, 1944-1946 (2000)
L. Chu, A. Zrenner, G. Böhm, G. Abstreiter
Local laser induced rapid thermal oxidation of SOI substrates
Appl. Surface Science 168, 204-207 (2000)
M. Huber, R. A. Deutschmann, R. Neumann, K. Brunner, G. Abstreiter
Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers
Jpn. J. Appl. Phys. 39, 1727-1729 (2000)
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M. C. Amann
Low-resistance InGa(Al)As tunnel junctions for long-wavelength vertical-cavity surface-emitting lasers
IEEE Photonics Technology Letters 39, 1727 (2000)
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M. C. Amann
Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy
Appl. Phys. Lett. 77, 4169-4171 (2000)
C. M. A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter
Mid-infrared photocurrent measurements on self-assembled Ge dots in Si
Physica E 7, 146-150 (2000)
C. Miesner, O. Röthig, K. Brunner, G. Abstreiter
Multi-exciton spectroscopy on a self-assembled InGaAs/GaAs quantum dot
Physica E 7, 354-358 (2000)
F. Findeis, A. Zrenner, M. Markmann, G. Böhm, G. Abstreiter
Negative differential resistance of a 2D electron gas in a 1D miniband
Physica E 7, 294-298 (2000)
R. A. Deutschmann, W. Wegscheider, M. Rother, M. Bichler, G. Abstreiter
Optical charging of self-assembled InAs quantum dots
in: Optical Properties of Semiconductor Nanostructures, Eds.: M. L. Sadowski, M. Potemski, and M. Grynberg, Kluwer Academic Publishers, Dordrecht, page 365 (2000)
D. Heinrich, J. Finley, M. Skalitz, J. Hoffmann, A. Zrenner, G. Böhm, G. Abstreiter
Optical properties of T-shaped quantum wire lasers
Phys. Stat. Sol. (a) 178, 227-231 (2000)
L. Sorba, G. Schedelbeck, W. Wegscheider, M. Bichler, G. Abstreiter
Optical spectroscopy on a single InGaAs/GaAs quantum dot in the few-exciton limit
Solid state communications 114, 227-230 (2000)
F. Findeis, A. Zrenner, G. Böhm, G. Abstreiter
Optical spectroscopy on a single quantum dot – single electron charging and Stark effect
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
M. Baier, F. Findeis, A. Zrenner, M. Bichler, G. Abstreiter
Optical spectroscopy on single quantum dots
in: Adv. in Sol. State Phys. Vol. 40 40, ed.: B. Kramer (2000)
A. Zrenner, F. Findeis, E. Beham, M. Markmann, G. Böhm, G. Abstreiter
Optically induced charge storage and de-charging in InAs quantum dots
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
D. Heinrich, A. Zrenner, G. Böhm, G. Abstreiter
Optically-induced charge storage in self-assembled InAs quantum dots
Thin Solid Films 380, 192-194 (2000)
D. Heinrich, J. Hoffmann, J. J. Finley, A. Zrenner, G. Böhm, G. Abstreiter
Phonon assisted biexciton generation in a single quantum dot
Phys. Rev. B 61, R10579 (2000)
F. Findeis, A. Zrenner, G. Böhm, G. Abstreiter
Photocurrent and resonant Raman spectroscopy on self-assembled In(Ga)As/GaAs quantum dots
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
L. Chu, A. Zrenner, M. Arzberger, G. Böhm, G. Abstreiter
Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE
Thin solid films 369, 398-401 (2000)
M. Markmann, E. Neufeld, K. Brunner, G. Abstreiter, C. Buchal
Quantum wires as Luttinger liquids: experiment
Adv. in Sol. State Phys. Vol. 40 40, ed.: B. Kramer (2000)
W. Wegscheider, M. Rother, F. Ertl, R. A. Deutschmann, M. Bichler, G. Abstreiter
Raman spectroscopy of In(Ga)As/GaAs quantum dots
Appl. Phys. Lett. 77, 3944-3946 (2000)
L. Chu, A. Zrenner, M. Bichler, G. Böhm, G. Abstreiter
Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfaces
Thin Solid Films 380, 124-126 (2000)
R. Neumann, J. Zhu, K. Brunner, G. Abstreiter
Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates
Physica E 7, 881-886 (2000)
K. Brunner, J. Zhu, C. Miesner, G. Abstreiter, O. Kienzle, F. Ernst
Semiclassical origin of the 2D metallic state in high mobility Si-MOS and Si/SiGe structures
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
G. Brunthaler, A. Prinz, G. Pillwein, G. Bauer, K. Brunner, G. Abstreiter, T. Dietl, V. M. Pudalov
Shape and size of buried SiGe islands
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
J. Stangl, V. Holý, A. Daniel, T. Roch, G. Bauer, T. H. Metzger, J. Zhu, K. Brunner, G. Abstreiter
Spectroscopy of single self-assembled quantum dots
Journal of Luminescence 87-89, 35 (2000)
A. Zrenner, F. Findeis, E. Beham, M. Markmann, G. Böhm, G. Abstreiter
Step bunching and correlated SiGe nanostructures on (113) Si
Thin Solid Films 369, 39-42 (2000)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst
Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices
J. Vac. Sci. Technol. B 18, 2187 (2000)
J. Stangl, T. Roch, V. Holý, M. Pinczolits, G. Springholz, G. Bauer, I. Kegel, T. H. Metzger, J. Zhu, K. Brunner, G. Abstreiter, D. Smilgies
Studies on impact excitation of Er in Si by hot carriers
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
M. Markmann, A. Sticht, F. Bobe, E. Neufeld, K. Brunner, G. Abstreiter
Ultrafast dynamics of holes in Si1-xGex/Si multiple quantum wells
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
R. A. Kaindl, M. Wurm, K. Reimann, M. Woerner, T. Elsässer, C. Miesner, K. Brunner, G. Abstreiter
Ultrafast optical spectroscopy of large-momentum excitons in GaAs
Phys. Rev. Lett. 84, 5812-5815 (2000)
G. Göger, M. Betz, A. Leitensdorfer, M. Bichler, W. Wegscheider, G. Abstreiter
Characteristics of surface and waveguide emitting SiGe:Er:O diodes
Journal of Luminescence 80, 321-327 (1999)
A. Sticht, E. Neufeld, A. Luigart, K. Brunner, G. Abstreiter, H. Bay
Comparison of different substrates for a fully depleted soi-cmos-technology
Electron Technology, 151-153 (1999)
T. Huttner, H. Wurzer, R. Mahnkopf, S. Pindl, G. Abstreiter
Correlated SiGe wires shaped by regular step bunches on miscut Si (113) substrates
Phys. Rev. B 60, 10935 (1999)
J. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst, M. Rühle
Direct sub-µm lateral patterning of SOI by focused laser beam induced oxidation
Microelectronic Engineering 48, 367-370 (1999)
R. A. Deutschmann, M. Huber, R. Neumann, K. Brunner, G. Abstreiter
Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures
Phys. Rev. B 59, 13242-13250 (1999)
C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. Schäffler
Enhancement of erbium photoluminescence by substitutional C alloying of Si
Appl. Phys. Lett. 75, 2584-2586 (1999)
M. Markmann, E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter
High-resolution x-ray diffraction on self-organized step bunches of Si1-xGex grown on (113)-oriented Si
J. Phys. D: Appl. Phys. 32, A71-A74 (1999)
J. Stangl, V. Holy, A. A. Darhuber, P. Mikulik, G. Bauer, J. Zhu, K. Brunner, G. Abstreiter
Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
Appl. Phys. Lett. 75, 3968-3970 (1999)
M. Arzberger, U. Käsberger, G. Böhm, G. Abstreiter
Influence of growth conditions on the photoluminescence of self-assambled InAs/GaAs quantum dots
J. of Appl. Phys. 85, 2355-2362 (1999)
L. Chu, M. Arzberger, G. Böhm, G. Abstreiter
Lateral ordering of coherent Ge islands on Si(001) studied by triple-crystal grazing incidence diffraction
Appl. Phys. Lett. 74, 2978-2980 (1999)
I. Kegel, T. H. Metzger, J. Peisl, P. Schittenhelm, G. Abstreiter
Mechanical nanomanipulation of single strain-induced semiconductor quantum dots
Appl. Phys. Lett. 75, 358-360 (1999)
C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto
Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots
Appl. Phys. Lett. 75, 3599-3601 (1999)
L. Chu, A. Zrenner, G. Böhm, G. Abstreiter
Optical and transport properties of low-dimensional structures fabricated by cleaved edge overgrowth
Microelectronic Engineering 47, 215-219 (1999)
W. Wegscheider, M. Rother, G. Schedelbeck, M. Bichler, G. Abstreiter
Optical properties of low-dimensional structures fabricated by cleaved edge overgrowth
(1999)
W. Wegscheider, G. Schedelbeck, M. Bichler, G. Abstreiter
Optically induced persistent charge storage effects in self assembled InAs quantum dots
Jpn. J. Appl. Phys. 38, 531-534 (1999)
J. J. Finley, M. Skalitz, M. Arzberger, A. Zrenner, G. Böhm, G. Abstreiter
Optimization of erbium-doped light-emitting diodes by p-type counterdoping
Appl. Phys. Lett. 75, 647-649 (1999)
E. Neufeld, M. Markmann, K. Brunner, G. Abstreiter
Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Appl. Phys. Lett. 74, 3200-3202 (1999)
C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto
Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots
Appl. Phys. Lett. 75, 2247-2249 (1999)
L. Chu, M. Arzberger, A. Zrenner, G. Böhm, G. Abstreiter
Regular step bunching and ordering of Ge Islands on vicinal Si surfaces
Proc. of ICPS 24, Ed. D. Gershoni World Scientific, p. 61 ff (1999)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst
Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE
Phys. Rev. B, 60 (1999)
K. Schmalz, I. N. Yassievich, P. Schittenhelm, G. Abstreiter
Spatially resolved spectroscopy of single and coupled quantum dots
Jpn. J. Appl. Phys. 38, 449-454 (1999)
G. Abstreiter, M. Bichler, M. Markmann, G. Schedelbeck, W. Wegscheider, A. Zrenner
Spatially resolved spectroscopy on single self-assembled quantum dots
Journal of Electronic Materials 28, 542 (1999)
A. Zrenner, M. Markmann, E. Beham, F. Findeis, G. Böhm, G. Abstreiter
Step characterization on vicinal Si surfaces by reflection high-energy electron diffraction at arbitrary azimuths
Applied Surface Science 137, 191-196 (1999)
J. Zhu, K. Brunner, G. Abstreiter
Strain relaxation of facetted Ge islands on Si (113)
Appl. Phys. Lett. 75, 2395-2397 (1999)
J. Zhu, C. Miesner, K. Brunner, G. Abstreiter
Atomically precise quantum dots fabricated by twofold cleaved edge overgrowth: From artifical atoms to molecules
Physica E 3 103-111 (1998)
W. Wegscheider, G. Schedelbeck, M. Bichler, G. Abstreiter
Band gaps and light emission in Si/Ge atomic layer structures
to be publ. in Semiconductors and Semimetals, Vol 49, Light emission in Silicon. Ed.: D. J. Lockwood, Academic Press 37-71 (1998)
G. Abstreiter
Chemical beam epitaxy of integrated 1.55 µm lasers on exact and misoriented (1 0 0)-InP substrates
Journal of Crystal Growth 188, 275-280 (1998)
A. Nutsch, N. Döhr, H. Kratzer, R. Lukas, B. Torabi, G. Tränkle, G. Abstreiter, G. Weimann
Design and Fabrication of Double Modulation Doped InAlAs/InGaAs/InAs Heterojunction FET’s for High Speed and Millimeter-wave Applications
IEEE Electron Devices 45 (1), Vol. 45 (1998)
D. Xu, H. Heiß, S. Kraus, M. Sexl, G. Böhm, G. Tränkle, G. Abstreiter
Die Entdeckung des fraktionalen Quanten-Hall-Effekts
Physikalische Blätter 54, 1098-1102 (1998)
G. Abstreiter
Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping
Physica E 2, 441-448 (1998)
P. Baumgartner, W. Wegscheider, G. Groos, G. Abstreiter
Effects of a lateral electric field on excitons in a single quantum dot
Physica E 2, 623-626 (1998)
W. Heller, U. Bockelmann, G. Abstreiter
Electrical Detection of Optically-Induced Charge Storage in Self-Assembled InAs Quantum Dots
Appl. Phys. Lett. 73, 2618-2620 (1998)
J. J. Finley, M. Skalitz, M. Arzberger, A. Zrenner, G. Böhm, G. Abstreiter
Electric-field effects on excitons in quantum dots
Physical Review B 57 (11), Vol. 57 (1998)
W. Heller, U. Bockelmann, G. Abstreiter
Electroluminescence studies of stacked self-assembled InAs/GaAs-quantum dots embedded in a Bragg resonator
Physica E 2, 594-598 (1998)
M. Arzberger, M. Hauser, G. Böhm, A. Zrenner, G. Abstreiter
Erbium doped Si/SiGe waveguide diodes: Optical and electrical characterization
Mat. Res. Soc. Symp. Proc. 533, 139-144 (1998)
E. Neufeld, A. Luigart, A. Sticht, K. Brunner, G. Abstreiter
Growth and characterization of strained Si1-xGex multi-quantum-well waveguide photodetectors on (1 1 0) Si for 1.3 and 1.55 µm
Physica E 2, 753-757 (1998)
K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele
Highly regular self-organization of step bunches during growth of SiGe on Si (113)
Appl. Phys. Lett. Vol 73 (1998)
A. A. Darhuber, J. Zhu, V. Holy, J. Stangl, P. Mikulik, K. Brunner, G. Abstreiter, G. Bauer
Lateral ordering of self-assembled Ge islands
Thin Solid Films 336, 252-255 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst
Luminescence from erbium- and oxygen-doped SiGe grown by molecular beam epitaxy
Thin Solid Films 321, 219-222 (1998)
E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter, H. Bay, C. Buchal, H. Holzbrecher
MBE-Growth of Metamorphic InGaAlAs Buffers
Inst. of Physics Conference Series 156, 49-52 (1998)
M. Sexl, G. Böhm, M. Maier, G. Tränkle, G. Weimann, G. Abstreiter
Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates
Thin Solid Films 321, 245-250 (1998)
K. Brunner, H. Dobler, G. Abstreiter, H. Schäfer, B. Lustig
Oblique roughness replication in strained SiGe/Si multilayers
Phys. Rev. B 57 (19), 12435-12442 (1998)
V. Holý, A. A. Darhuber, J. Stangl, G. Bauer, J. Nuetzel, G. Abstreiter
Observation of ?105? faceted Ge pyramids inclined towards vicinal Si(001) surfaces
Appl Phys. Lett. 72 (4), 424-426 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter
Observation of step bunches in units of 4 ML on vicinal Si(113) surfaces
Appl Phys. Lett. 73 (17), 2438-2440 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter
Optische Eigenschaften von Quantenpunkten und mögliche Anwendungen
PTB-Bericht, Techn. Univ. Braunschweig, 3-17 (1998)
G. Abstreiter
Photo- and electroluminescence characterization of erbium doped SiGe
J. Vac. Sci. Technol. B 16 (1998)
E. Neufeld, A. Sticht, K. Brunner, H. Riedl, G. Abstreiter
Polarization dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells
Superlattices and Microstructures 23, 61-66 (1998)
P. Kruck, A. Weichselbaum, M. Helm, T. Fromherz, G. Bauer, J. Nuetzel, G. Abstreiter
Quantum dots fabricated by twofold cleaved edge overgrowth
Physica E 2, 7-Jan (1998)
G. Schedelbeck, W. Wegscheider, M. Rother, S. Glutsch, M. Bichler, G. Abstreiter
Raman scattering in annealed isotopic (70Ge)n(74Ge)m superlattices
Physica E 2 291-294 (1998)
E. Silveira, W. Dondl, G. Abstreiter, E. E. Haller
Room temperature 1.54µm electroluminescende from erbium deped Si/SiGe waveguides
Appl. Phys. Lett. 73, 3061-3063 (1998)
E. Neufeld, A. Sticht, A. Luitgart, K. Brunner, G. Abstreiter
Self-Assembled Ge-Dots: Growth, Characterization, Ordering and Applications
J. Vac.Sci. Technol. B 16 (1998)
P. Schittenhelm, C. Engel, F. Findeis, G. Abstreiter, A. A. Darhuber, A. O. Kosogov, P. Werner
Shape, size, strain and correlations in quantum dot systems studied by grazing incidence X-ray scattering methods
Thin solid Films 336, 8-Jan (1998)
T. H. Metzger, I. Kegel, R. Paniago, A. Lorke, J. Peisl, J. Schulze, I. Eisele, P. Schittenhelm, G. Abstreiter
Size distribution of coherently strained InAs quantum dots
J. Appl. Phys. 84, 4268-4272 (1998)
K. H. Schmidt, G. Medeiros-Ribeiro, U. Kunze, G. Abstreiter, M. Petroff
Spatially resolved exciton trapping in a voltage- controlled lateral superlattice
Appl. Phys. Lett. 73, 154-156 (1998)
S. Zimmermann, G. Schedelbeck, A. O. Govorov, A. Wixforth, J. P. Kotthaus, M. Bichler, W. Wegscheider, G. Abstreiter
Spatially resolved optical spectroscopy on natural quantum dots
Applied Surface Science 123/124, 356-365 (1998)
A. Zrenner, A. Schaller, M. Markmann, M. Hagn, M. Arzberger, D. Henry, G. Abstreiter, G. Böhm, G. Weimann
Spectroscopy of excitonic Zeeman levels in single quantum dots
Physica E 2, 609-613 (1998)
A. Schaller, A. Zrenner, G. Abstreiter, G. Böhm
Spin splitting in GaAs quantum wire structures
PHYSICA E 2 1-4 929-932 (1998)
E. Silveira, M. K. Kelly, C. E. Nebel, G. Bohm, G. Abstreiter, M. Stutzmann
Structural characterization of self-assembled Ge dot multilayers by x-ray diffraction and reflectivity methods
Physica E, 2. 789-793 (1998)
A. A. Darhuber, V. Holy, P. Schittenhelm, J. Stangl, I. Kegel, Z. Kovats, T. H. Metzger, G. Bauer, G. Abstreiter, G. Grübel
The Origin of Various PL-Bands in Si/Ge Strain-Symmetrized Superlattices
Microelectronic Engineering 43, 165-170 (1998)
J. Olajos, J. Nilson, M. Gail, G. Abstreiter
Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with step bunches
Appl. Phys. Lett. 73 (59), 620-622 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter
Von künstlichen Atomen zu Molekülen
Physikalische Blätter 54 1115-1117 (1998)
G. Abstreiter
Von künstlichen Atomen zu Molekülen
TUM-Mitteilungen 4, 26 (1998)
G. Abstreiter
X-ray reflectivity investigations of the interface morphology on strained SiGe/Si multilayers
Semicond. Sci. Technol. 13, 590-598 (1998)
V. Holý, A. A. Darhuber, J. Stangl, G. Bauer, J. Nuetzel, G. Abstreiter
0.15 µm double modulation doped InAs-inserted-channel MODFETs: Gate recess for optimum RF performances
Electronics Lett. Vol. 33 (6) 33 (6), 532-533 (1997)
D. Xu, H. Heiß, S. Kraus, M. Sexl, G. Böhm, G. Tränkle, G. Weimann, G. Abstreiter
2 S/mm Transconductance InAs-Inserted-Channel Modulation Doped Field Effect Transistors with a Very Close Gate-to-Channel Separation of 14.5 nm
Jpn. J. Appl. Phys. 36, (No. 4B), L470-L472 (1997)
D. Xu, H. Heiß, M. Sexl, S. Kraus, G. Böhm, G. Tränkle, G. Weimann, G. Abstreiter
Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth
Phys. Rev. Letters 79 (10), 1917-1920 (1997)
W. Wegscheider, G. Schedelbeck, G. Abstreiter, M. Rother, M. Bichler
Coupled Quantum Dots Fabricated by Cleaved Edge Overgrowth: From Artifical Atoms to Molecules
Science Vol 278, 1792-1795 (1997)
G. Schedelbeck, W. Wegscheider, M. Bichler, G. Abstreiter
Defect-free strain relaxation in locally MBE-grown SiGe-heterostructures
Thin Solid Films 294, 27-32 (1997)
T. Rupp, F. Kaesen, W. Hansch, E. Hammerl, D. J. Gravesteijn, R. Schorer, E. Silveira, G. Abstreiter, I. Eisele
Direct and indirect magnetoexcitons in InGaAs/GaAs coupled quantum wells: experiment and theory
12th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany, July 28-Aug.2, 1996. Vol 2, 689-692 (1997)
L. V. Butov, A. B. Dzyubenko, A. L. Yablonskii, A. Zrenner, G. Abstreiter, A. V. Petinova, K. Eberl
Erbium-silicon light emitting diodes grown by molecular beam epitaxy: optical properties
Thin Solid Films 294, 220-222 (1997)
J. Stimmer, A. Reittinger, E. Neufeld, G. Abstreiter, H. Holzbrecher, U. Breuer, C. Buchal
Fabrication of lateral npn- and pnp- structures on Si/SiGe by focused laser beam writing and their application as photodetectors
J. Appl. Phys. 81 (9), 6455-6460 (1997)
C. Engel, P. Baumgartner, M. Holzmann, J. Nuetzel, G. Abstreiter
Franz-Keldysh effect in lateral GaAs/AlGaAs based npn-structures
Appl. Phys. Lett. 70 (21), 2876-2878 (1997)
P. Baumgartner, C. Engel, G. Böhm, G. Abstreiter
Ge self-diffusion in isotopic (70Ge)n(74Ge)m superlattices: A Raman study
Phys. Rev. B 56 (4), 2062-2069 (1997)
E. Silveira, W. Dondl, G. Abstreiter, E. E. Haller
Growth of self-assembled homogeneous SiGe dots on Si(100)
Thin Solid Films 294, 291-295 (1997)
P. Schittenhelm, G. Abstreiter, A. Darhuber, G. Bauer, P. Werner, A. Kosogov
High Performance Double Modulation Doped InAlAs/InGaAs/InAs HFETs
IEEE Electon Device Letters 18 (7), Vol. 18 (1997)
D. Xu, H. Heiß, S. Kraus, M. Sexl, G. Böhm, G. Tränkle, G. Weiman, G. Abstreiter
High resolution x-ray diffraction from multilayered self-assembled Ge-dots
Phys. Rev. B 55 (23), 15652-15663 (1997)
A. A. Darhuber, P. Schittenhelm, V. Holý, J. Stangl, G. Bauer, G. Abstreiter
Influence of germanium content on the photoluminescence of erbium- and oxygen-doped SiGe grown by molecular beam epitaxy
H. Holzbrecher, Phys. Lett 71 (1997)
E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter
Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes
Appl. Phys. Lett. 70 (18), 2431-2433 (1997)
A. Reittinger, J. Stimmer, G. Abstreiter
Infrared studies of p-type Si/SiGe quantum wells: intersubband absorption, infrared detectors, and second harmonic generation
Thin Solid Films (EMRS) 294, 330-335 (1997)
M. Helm, P. Kruck, T. Fromherz, A. Weichselbaum, M. Seto, G. Bauer, Z. Moussa, P. Boucaud, F. H. Julien, J. M. Lourtioz, J. Nuetzel, G. Abstreiter
Intersubband transitions, infrared detectors, and optical nonlinearities in SiGe multiquantum wells
Mat. Res. Soc. Symp. Proc., 450, 201-211 (1997)
M. Helm, P. Kruck, T. Fromherz, M. Seto, G. Bauer, J. Nuetzel, G. Abstreiter
Lateral photodetector devices on Si/SiGe heterostructures
Thin Solid Films 294, 347-350 (1997)
C. Engel, P. Baumgartner, M. Holzmann, J. Nuetzel, G. Abstreiter
Local spectroscopy of magnetoexcitons in different types of single quantum dots
12th Int. Conf. on The Application of High Magnetic Fields in Semiconductor Physics, Würzburg, Germany, July 28-Aug.2, 1996.Vol 2, 655-658 (1997)
W. Heller, U. Bockelmann, G. Abstreiter
Micro-photoluminescence studies of single quantum dots. II. Magnetic-field experiments
Phys. Rev. B 55 (7), 4469-4472 (1997)
U. Bockelmann, W. Heller, G. Abstreiter
P. Werner, N.A. Bert, G.G. Konnikov, A.A. Suvorova, V.M. Ustinov, N.N. Ledentsov, D. Bimberg, P. Schittenhelm
Inst. of Physics Conf. Series 155, 851-854 (1997)
A. O. Kosoyov, G. Abstreiter
Quantum Wires and Dots Fabricatet by Cleaved Edge Overgrowth
Phys. Stat. Sol. (a) 164, 601-606 (1997)
W. Wegscheider, G. Schedelbeck, M. Bichler, G. Abstreiter
Self-assembled growth of Sn on Ge (001)
Thin Solid Films 294, 308-310 (1997)
W. Dondl, P. Schittenhelm, G. Abstreiter
Single electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure
Appl. Phys. Lett. 70 (16), 2135-2137 (1997)
P. Baumgartner, W. Wegscheider, M. Bichler, G. Schedelbeck, R. Neumann, G. Abstreiter
STM-Cathodoluminescence of Self-Assembled InGaAs Quantum Dots
Phys. Stat. Sol. (a) 164, 301-305 (1997)
M. Markmann, A. Zrenner, G. Böhm, G. Abstreiter
Structural characterization of self-organized semiconductor dots by X-ray methods
Phantoms Newsletters 13, 5-Jan (1997)
A. A. Darhuber, V. Holy, G. Bauer, P. Schittenhelm, G. Abstreiter
Temperature and Power Dependence of Exciton Spectra in Quantum Dots
Phys. Stat. Sol. (a) 164, 281-286 (1997)
U. Bockelmann, W. Heller, A. Filoramo, P. Roussignol, G. Abstreiter
X-ray diffraction and reflection from self-assembled Ge-dots
Thin Solid Films 294, 298-299 (1996)
A. A. Darhuber, H. Stangl, G. Bauer, P. Schittenhelm, G. Abstreiter
Anomalous Transport of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
Surface Science 361/362, 243-246 (1996)
L. V. Butov, A. Zrenner, M. Hagn, G. Abstreiter, G. Böhm, G. Weimann
Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells
Phys. Rev. B 54 (3), 1922-1927 (1996)
J. Olajos, J. Engwall, H. G. Grimmeiss, M. Gail, G. Abstreiter, H. Presting, H. Kibbel
Diffusion Effects and Luminescence in Thin SiGe/Si Layers
Solid State Phenomena Vols 47-48, 473-484 (1996)
M. Gail, W. Jung, J. Brunner, P. Schittenhelm, J. Nuetzel, G. Abstreiter
Early stages of growth of self-assembled Ge-rich islands on Si
Proc. of 11th European Congress on Electron Microscopy, Dublin, Aug. 26-30, 1996. Publ.: EUREM’96, U.C.D. Belfield, Dublin 4, Ireland (1996)
D. Meertens, W. Jäger, P. Schittenhelm, G. Abstreiter
Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy
Appl. Phys. Lett. 68 (23), 3290-3292 (1996)
J. Stimmer, A. Reittinger, J. Nuetzel, G. Abstreiter, H. Holzbrecher, C. Buchal
Electronic excitations in quantum wires and dots
Physica B 227, 10-Jun (1996)
G. Abstreiter, R. Strenz, G. Schedelbeck, E. Silveira
Electronic properties of Si/SiGe/Ge heterostructures
Physica Scripta Vol. T68 T68, 68-71 (1996)
G. Abstreiter
Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing
Appl. Phys. Lett. 68 (21), 3025-3027 (1996)
M. Holzmann, P. Baumgartner, C. Engel, J. Nuetzel, G. Abstreiter, F. Schäffler
Far-infrared-study of shallow etched quantum wires on high mobility GaAs/AlGaAs heterostructures and quantum-wells
Solid-State Electronics 40 (1-8) (1996)
V. Roßkopf, P. Auer, E. Gornik, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann
Growth and characterization of self-assembled Ge-rich islands on Si
Semicond. Sci. Technol. 11, 1521-1528 (1996)
G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, W. Jäger
Growth conditions of Erbium-Oxygen-doped Silicon grown by MBE
Mat. Res. Soc. Symp. Proc. Vol. 422 422, 15 (1996)
J. Stimmer, A. Reittinger, G. Abstreiter, H. Holzbrecher, C. Buchal
Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures
J. of Raman Spectroscopy Vol. 27 27, 193-200 (1996)
G. Abstreiter
Linewidth and finestructure of optical spectra from single quantum dots
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 2, 1433-1436, Berlin, Germany, July 21-26 (1996)
A. Zrenner, M. Hagn, A. Schaller, G. Abstreiter, G. Böhm, G. Weimann
Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures
Surface Science 361/362, 673-676 (1996)
M. Holzmann, D. Többen, P. Baumgartner, G. Abstreiter, A. Kriele, H. Lorenz, F. Schäffler
Medium-wavelength, normal-incidence, p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K
Appl. Phys. Lett. 69 (22), 3372-3374 (1996)
P. Kruck, M. Helm, T. Fromherz, G. Bauer, J. Nuetzel, G. Abstreiter
On the voltage stability of lateral barriers in in-plane-gated structures
Appl. Phys. Lett. 69 (1), 76-78 (1996)
P. Baumgartner, C. Engel, G. Abstreiter
Optical properties of reactive-ion-etched Si/Si1-xGex heterostructures
J. of Vac. Sci. Technol. B 14 (2), 698-706 (1996)
T. Köster, J. Gondermann, B. Hadam, B. Spangenberg, M. Schütze, H. G. Roskos, H. Kurz, J. Brunner, G. Abstreiter
Photoluminescence of Erbium-Oxygen-doped Silicon grown by molecular beam epitaxy
Solid State Communications Vol. 100 (5) 100 (5), 321-323 (1996)
J. Stimmer, C. Wetterer, G. Abstreiter
Polarization dependence of intersubband absorption and photoconductivity in p-type SiGe quantum wells
Superlattices and Microstructures Vol. 20 (2) 20 (2), 237-243 (1996)
T. Fromherz, P. Kruck, M. Helm, G. Bauer, J. Nuetzel, G. Abstreiter
Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 405-408 (1996)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Resonant inelastic light scattering by electronic excitations in tunable quantum wire structures
Surface Science 361/362, 783-787 (1996)
G. Schedelbeck, E. Silveira, R. Strenz, U. Bockelmann, G. Abstreiter, G. Böhm, G. Weimann
RHEED investigations of surface diffusion on Si(001)
Applied Surface Science 102, 78-81 (1996)
J. Nuetzel, P. Brichzin, G. Abstreiter
Room temperature electroluminescence of Erbium-Oxygen-doped Silicon diodes grown by molecular beam epitaxy
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 4, 3945-3048, Berlin, Germany, July 21-26 (1996)
J. Stimmer, A. Reittinger, C. Wetterer, A. Zrenner, G. Abstreiter, H. Holzbrecher, C. Buchal
Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE
Applied Surface Science 102, 327-330 (1996)
M. Jaumann, J. Stimmer, P. Schittenhelm, J. Nuetzel, G. Abstreiter, E. Neufeld, B. Holländer, C. Buchal
Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 763-766 (1996)
P. Kruck, M. Seto, M. Helm, Z. Moussa, P. Boucaud, F. H. Julien, J. M. Lourtioz, J. Nuetzel, G. Abstreiter
Segregation and diffusion on semiconductor surfaces
Phys. Rev. B 53 (20), 13 551-13 558 (1996)
J. Nuetzel, G. Abstreiter
Segregation of n-dopants on SiGe surfaces
Applied Surface Science 102, 98-101 (1996)
J. Nuetzel, M. Holzmann, P. Schittenhelm, G. Abstreiter
Structure and luminescence of SiGe-Si quantum dots and wires from local epitaxy
Proc. of 11th European Congress on Electron Microscopy (1996)
D. Meertens, W. Jäger, K. Urban, J. Brunner, P. Schittenhelm, G. Abstreiter, J. Gondermann, B. Hadam, H. Kurz, T. S. Rupp, H. Gossner, I. Eisele
The influence of surface states on in-plane-gated structures
Superlattices and Microstructures 20, No. 4, 587-594 (1996)
P. Baumgartner, C. Engel, G. Abstreiter
Time resolved spectroscopy of single quantum dot structures
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 541-544 (1996)
U. Bockelmann, P. Roussignol, A. Filoramo, W. Heller, G. Abstreiter
Time resolved spectroscopy of single quantum dots: Fermi gas of excitons?
Phys. Rev. Lett. 76 (1996)
U. Bockelmann, P. Roussignol, A. Filoramo, W. Heller, G. Abstreiter, K. Brunner, G. Böhm, G. Weimann
Transport in silicon/germanium nanostructures
Applied Surface Science 102, 230-236 (1996)
M. Holzmann, D. Többen, G. Abstreiter
Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells
Appl. Phys. Lett. 68 (1996)
T. Fromherz, P. Kruck, M. Helm, G. Bauer, J. Nuetzel, G. Abstreiter
Angular dispersion of confined optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy
Solid State Communications 93 (1995)
M. Zunke, R. Schorer, G. Abstreiter, W. Klein, G. Weimann, M. P. Chamberlain
Antidot superlattices in two-dimensional hole gases confined in strained germanium layers
Semicond. Sci. Technol. 10, 1413-1417 (1995)
D. Többen, M. Holzmann, G. Abstreiter, A. Kriele, H. Lorenz, J. P. Kotthaus, F. Schäffler, Y. H. Xie, P. J. Silvermann, D. Monroe
Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure
Semicond. Sci. Technol. 10, 711-714 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Comparison of P and Sb as n-dopants for Si molecular beam epitaxy
J. Appl. Phys. 78 (2), 937-940 (1995)
J. Nuetzel, G. Abstreiter
Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells
Phys. Rev. B 52 (16), 12 153-12 157 (1995)
L. V. Butov, A. Zrenner, G. Abstreiter, A. V. Petinova, K. Eberl
Effective masses in SiGe
In: Properties of strained and relaxed Silicon Germanium., IEE, London, 1995. 103-109. (1995)
J. Nuetzel, C. M. Engelhardt, G. Abstreiter
Fabrication and characterization of locally grown SiGe wires and dots
Mat. Sci. and Technol. 11 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele
Fabrication and Characterization of Si/SiGe Nanometer Structures
Microelectronic Engineering 27, 83-86 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele
Fabrication of lateral npn-phototransistors with high gain and sub-µm spatial resolution
Appl. Phys. Lett. 66 (1995)
P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Weimann
Germanium70Ge/74Ge isotope heterostructures: An approach to self-diffusion studies
Phys. Rev. B 51 (1995)
H. D. Fuchs, W. Walukiewicz, E. E. Haller, W. Dondl, R. Schorer, G. Abstreiter, A. I. Rudnev, A. V. Tikhomirov, V. I. Ozhogin
Growth and properties of high mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates
J. of Crystal Growth 150, 1011-1014 (1995)
J. Nuetzel, C. M. Engelhardt, R. Wiesner, D. Többen, M. Holzmann, G. Abstreiter
In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation
Appl. Phys. Lett. 67 (11), 1579-1581 (1995)
D. Többen, D. K. D. Vries, A. D. Wieck, M. Holzmann, G. Abstreiter, F. Schäffler
Investigation of strain relaxation of Ge1-xSix epilayers on Ge(001) by high-resolution x-ray reciprocal space mapping
Semicond. Sci. Technol. 10, 1621-1628 (1995)
J. H. Li, V. Holý, G. Bauer, J. Nuetzel, G. Abstreiter
Local epitaxy of Si/SiGe wires and dots
J. of Cryst. Growth 157, 270-275 (1995)
J. Brunner, W. Jung, P. Schittenhelm, M. Gail, G. Abstreiter, J. Gonderman, B. Hadam, T. Koester, B. Spangenberg, H. G. Roskos, H. Kurz, H. Gossner, I. Eisele
Magnetic-Field induced Intersubband Resonances in AlGaAs/GaAs Quantum Wells
Europhysics Letters 30, 111-116 (1995)
C. Gauer, A. Wixforth, J. P. Kotthaus, G. Abstreiter, G. Weimann, W. Schlapp
MBE-growth of ternary SnGeSiGe superlattices
J. of Cryst. Growth 157, 400-404 (1995)
W. Dondl, E. Silveira, G. Abstreiter
Molecular beam epitaxial grown Si1-xCx layers on Si(001) as a substrate for MOWCVD of diamond
J. of Cryst. Growth 157, 426-430 (1995)
T. Gutheit, M. Heinau, H. J. Füsser, C. Wild, P. Koidl, G. Abstreiter
Nanometer resolved photocurrent and local minority carrier transport in GaAs p-n junctions
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 249 (1995)
G. Zandler, G. Kolb, K. Karrai, G. Abstreiter, P. Vogl
One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures
Appl. Phys. Lett. 66 (1995)
M. Holzmann, D. Többen, G. Abstreiter, M. Wendel, H. Lorenz, J. P. Kotthaus, F. Schäffler
Optical anisotropy of Si/Ge superlattices: Resonant Raman scattering in in-plane geometry
Solid State Communications 93 (1995)
R. Schorer, G. Abstreiter, H. Kibbel, H. Presting, C. Tserbak, G. Theodorou
Optical near-field induced current microscopy
Ultramicroscopy 61, 299-304 (1995)
K. Karraï, G. Kolb, G. Abstreiter, A. Schmeller
Optical study of diffusion limitation in MBE growth of SiGe quantum wells
Semicond. Sci. Technol. 10, 319-325 (1995)
M. Gail, J. Brunner, J. Nuetzel, G. Abstreiter, J. Engvall, J. Olajos, H. Grimmeiss
Optically detected cyclotron resonance on GaAs/AlxGaAs1-x quantum wells and quantum wires
Phys. Rev. B 52 (15), 11 313-11 318 (1995)
D. M. Hofmann, M. Drechsler, C. Wetzel, B. K. Meyer, F. Hirler, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann
Photodetector with subwavelength spatial resolution
Ultramicroscopy 57, 208-211 (1995)
G. Kolb, C. Obermüller, K. Karraï, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)
Appl. Phys. Lett. 67 (9), 1292-1294 (1995)
P. Schittenhelm, M. Gail, J. Brunner, J. Nuetzel, G. Abstreiter
Resonant inelastic light scattering by plasmons at the crossover from two- to one-dimensional behavior
Solid State Communications 93 (1995)
G. Schedelbeck, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann
Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy
Journal of Crystal Growth 157, 15-20 (1995)
H. Presting, T. Zinke, O. Brux, G. Abstreiter, H. Kibbel, M. Jaros
Room-temperature photoluminescence of GemSinGem structures
Appl. Phys. Lett. 66 (22), 2978-2980 (1995)
M. Gail, G. Abstreiter, J. Olajos, J. Engvall, H. Grimmeiss, H. Kibbel, H. Presting
Self-assembling InP/In0.48Ga0.52P quantum dots grown by MBE
Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates 298, Rottach-Egern, Germany, Feb. 20 - 24 (1995)
A. Kurtenbach, K. Eberl, K. Brunner, G. Abstreiter
Self-organized MBE growth of Ge-rich SiGe-dots on Si(100)
J. of Cryst. Growth 157, 260-264 (1995)
P. Schittenhelm, M. Gail, G. Abstreiter
Si/Si1-xGex multiquantum wells: a route to infrared detectors
Vibrational Spectroscopy 8, 109-119 (1995)
T. Fromherz, J. Nuetzel, H. Hertle, M. Helm, G. Bauer, G. Abstreiter
SiGe Quantum Wells on (110) Si Grown by Molecular Beam Epitaxy
J. of Crystal Growth 150, 1050-1054 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl
SiGe quantum wells on (110) Si grown molecular beam epitaxy
J. Crystal Growth 150, 1050 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl
SiGe Wires and Dots Grown by Local Epitaxy
J. of Crystal Growth 150, 1060-1064 (1995)
J. Brunner, P. Schittenhelm, J. Gondermann, B. Spangenberg, B. Hadam, T. Köster, H. G. Roskos, H. Kurz, H. Gossner, I. Eisele, G. Abstreiter
Strain relaxation of Ge1-xSix buffer systems grown on Ge (001)
Appl. Phys. Lett. 67 (6), 789-791 (1995)
J. H. Li, V. Holy, G. Bauer, J. Nuetzel, G. Abstreiter
Strained Si1-xGex multi-quantum well waveguide structures on (110) Si
Appl. Phys. Lett. 66 (17), 2226-2228 (1995)
K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele
Time resolved photoluminescence of spatially direct and indirect transitions in GaAs/
Phys. Rev. B 51 (1995)
G. Abstreiter
Time-resolved photoluminescence of pseudomorphic SiGe quantum wells
Phys. Rev. B 52, 16 608-16 611 (1995)
A. Zrenner, B. Fröhlich, J. Brunner, G. Abstreiter
Transmitted radiation through a subwavelength-sized tapered optical fiber tip
Ultramicroscopy 61, 171-177 (1995)
C. Obermüller, K. Karraï, G. Kolb, G. Abstreiter
Transport properties of a Si/SiGe quantum point-contact in the presence of impurities
Phys. Rev. B 52 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Angular dispersion of optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 2, 947-954, Vancouver, Canada, August 15-19 (1994)
R. Schorer, M. Zunke, G. Abstreiter, W. Klein, G. Weimann, M. P. Chamberlain
Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
Phys. Rev. Lett. 73 (2), 304-307 (1994)
L. V. Butov, A. Zrenner, G. Abstreiter, G. Böhm, G. Weimann
Confined plasmons in shallow etched quantum wires
Semicond. Sci. Technol. 9, 399-403 (1994)
R. Strenz, V. Roßkopf, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Effects of microwave modulation and cyclotron resonance on the luminescence of GaAs/AlGaAs quantum wells and wires
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 2, 1659-1662, Vancouver, Canada, August 15-19 (1994)
D. M. Hofmann, M. Drechsler, C. Wetzel, P. Emanuelsson, B. K. Meyer, F. Hirler, G. Abstreiter, G. Tränkle, G. Weimann
Electron transport through antidot superlattices in Si/Si0.7Ge0.3 heterostructures
Phys. Rev. B 50 (1994)
D. Többen, M. Holzmann, S. Kühn, H. Lorenz, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Evidence for the exciton condensation in coupled quantum wells at high magnetic fields
Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 328-331 (1994)
L. V. Butov, A. Zrenner, G. Abstreiter, G. Böhm, G. Weimann
Excitonic luminescence from locally grown SiGe wires and dots
Appl. Phys. Lett. 64 (1994)
J. Brunner, T. S. Rupp, H. Gossner, R. Ritter, I. Eisele, G. Abstreiter
Fabrication of in-plane-gate transistor structures by focused-laser-beam-induced Zn-doping of modulation-doped GaAs/AlGaAs quantum wells
Appl. Phys. Lett. 64 (1994)
P. Baumgartner, K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure
J. Appl. Phys. 76 (6), 3917-3919 (1994)
M. Holzmann, D. Többen, G. Abstreiter, F. Schäffler
High Mobility 2D Hole Gases in Strained Ge Channels in Si Substrates Studied by Magnetotransport and Cyclotron Resonance
Solid State Electronics 37, Vol. 37 (1994)
C. M. Engelhardt, D. Többen, M. Aschauer, F. Schäffler, G. Abstreiter, E. Gornik
Hole energy levels and intersubband absorption in modulation-doped Si/Si1-xGex multiple quantum wells
Phys. Rev. B 50 (1994)
T. Fromherz, E. Koppensteiner, M. Helm, G. Bauer, J. Nuetzel, G. Abstreiter
Information on the confinement potential in GaAs/AlGaAs wires from magneto- luminescence experiments
Surface Science 305, 591-596 (1994)
F. Hirler, R. Strenz, R. Küchler, G. Abstreiter, G. Böhm, G. Weimann
In-plane Raman scattering of (001)-Si/Ge superlattices: Theory and experiment
Phys. Rev. B 49 (1994)
R. Schorer, G. Abstreiter, S. D. Gironcoli, E. Molinari, H. Kibbel, H. Presting
Intersubband absorption in modulation doped p-type Si1-xGex quantum wells: theory and experiment
Superlattices and Microstructures 15, Vol. 15 (1994)
T. Fromherz, E. Koppensteiner, M. Helm, G. Bauer, J. Nuetzel, G. Abstreiter
Lateral npn-phototransistors with high gain and high spatial resolution fabricated by focused laser beam induced Zn doping of GaAs/AlGaAs quantum wells
Proc. of the 21st Int. Conf. on Compound Semiconductors, San Diego, USA, September 18 - 22, 1994. Ed.: Herb Goronkin and Umesh Mishra. IOP Publishing Ltd., 1995. 591-596. (1994)
P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Magneto-optics of two-dimensional hole systems in the extreme quantum limit
Phys. Rev. B 49 (19), 14054-14057 (1994)
L. V. Butov, A. Zrenner, M. Shayegan, G. Abstreiter, H. C. Manoharan
Magnetotransport of Electrons in Arrays of Antidots Imposed upon Si/Si0.7Ge0.3 Heterostructures
Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 480-483 (1994)
D. Többen, M. Holzmann, S. Kühn, H. Lorenz, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Nanometer-resolved photocurrent and local minority carrier transport in GaAs P-N junctions
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 1, 249-252, Vancouver, Canada, August 15-19 (1994)
G. Zandler, G. Kolb, K. Karraï, G. Abstreiter, P. Vogl
Optical photodetector for near-field optics
Appl. Phys. Lett. 65 (1994)
G. Kolb, K. Karraï, G. Abstreiter
Phonons in semiconductor superlattices studied by in-plane Raman scattering
Philosophical Magazine B, 70 (1994)
R. Schorer, G. Abstreiter
Photo- and electroluminescence in short-period Si/Ge superlattice structures
Semicond. Sci. Technol. 9, 2011-2016 (1994)
J. Olajos, J. Engvall, H. G. Grimmeiss, U. Menczigar, M. Gail, G. Abstreiter, H. Kibbel, E. Kasper, H. Presting
Photoluminescence and two-photon absorption of the biexciton state in a GaAs/AlGaAs single quantum dot
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 3, 1823-1826, Vancouver, Canada, August 15-19 (1994)
K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Quantum Dots Formed by Interface Fluctuations in AlAs/GaAs Coupled Quantum Well Structures
Phys. Rev. Lett. 72 (21), 3382-3385 (1994)
A. Zrenner, L. V. Butov, M. Hagn, G. Abstreiter, G. Böhm, G. Weimann
Raman Scattering by Optical Phonons in Isotopic 70(Ge)n74(Ge)n Superlattices
Phys. Rev. Lett. 72 (1994)
J. Spitzer, T. Ruf, M. Cardona, W. Dondl, R. Schorer, G. Abstreiter, E. E. Haller
Relaxation and Radiative Decay of Excitons in GaAs Quantum Dots
Solid State Electronics 37, Vol. 37 (1994)
U. Bockelmann, K. Brunner, G. Abstreiter
Resonant inelastic light scattering by inter- and intrasubband excitations in shallow etched quantum dots and wires
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 3, 1831-1834, Vancouver, Canada, August 15-19 (1994)
R. Strenz, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Resonant-Raman-scattering study on short-period Si/Ge superlattices
Phys. Rev. B50 (1994)
R. Schorer, G. Abstreiter, H. Kibbel, H. Presting
Second-harmonic generation in asymmetric Si/SiGe quantum wells
Appl. Phys. Lett. 65 (1994)
M. Seto, M. Helm, Z. Moussa, P. Boucaud, F. H. Julien, J. M. Lourtioz, J. Nuetzel, G. Abstreiter
Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure
Phys. Rev. Lett. 73 (1994)
K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities
Appl. Phys. Lett. 64 (1994)
K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Si/Ge Heterostructures for Device Applications
Proc. of the Int. Conf. on Advanced Microelectronic Devices and Processing (AMDP), March 3-5, 1994, Sendai, Japan. Komiyama Printing Co., Japan 1994. 663-667 (1994)
G. Abstreiter
Silicon/Germanium Quantum Structures
Special Issue of Solid State Communications on „Highlights in Condensed-Matter Physics and Materials Science“, 92 (1994)
G. Abstreiter
Single-Particle Excitations in Quasi-Zero- and Quasi-One-Dimensional Electron Systems
Phys. Rev. Lett. 73 (1994)
R. Strenz, U. Bockelmann, F. Hirler, G. Abstreiter, G. Böhm, G. Weimann
Systematic Study of Intersubband Absorption in Modulation-Doped p-Type Si/Si1-xGex Quantum Wells
Solid State Electronics 37, Vol. 37 (1994)
T. Fromherz, E. Koppensteiner, M. Helm, G. Bauer, J. Nuetzel, G. Abstreiter
Vibrational Properties of Isotopic 70Gen74Gen Superlattices
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 2, 971-974, Vancouver, Canada, August 15-19 (1994)
J. Spitzer, T. Ruf, M. Cardona, C. Grein, W. Dondl, R. Schorer, G. Abstreiter, E. E. Haller
Vibrational Properties of Si/Ge Superlattices: Theory and in-plane Raman Scattering Experiments
Solid State Electronics 37, Vol. 37 (1994)
R. Schorer, G. Abstreiter, S. D. Gironcoli, E. Molinari, H. Kibbel, E. Kasper
Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
J. de Physique IV 3, Vol. 3 ,167-170 (1993)
L. V. Butov, A. Zrenner, G. Abstreiter, G. Böhm, G. Weimann
Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)n superlattices
Phys. Rev. B47 (1993)
U. Menczigar, G. Abstreiter, J. Olajos, H. Grimmeiss, H. Kibbel, H. Presting, E. Kasper
Enhanced Band-gap Luminescence in strain-symmetrized (Si)m/(Ge)n Superlattices
Mat. Res. Soc. Symp. Proc. 298, 33-44 (1993)
U. Menczigar, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper
High mobility two-dimensional electron gases in Si/Si1-xGex heterostructures grown by MBE
J. of Crystal Growth 127, 421-424 (1993)
D. Többen, F. Schäffler, M. Besson, C. M. Engelhardt, A. Zrenner, G. Abstreiter, E. Gornik
High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices
Acta Physica Polonica A 84 (1993)
G. Bauer, E. Koppensteiner, P. Hamberger, J. Nuetzel, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper
How to convert group-IV semiconductors into light emitters
Physica Scripta T49, 476 (1993)
P. Vogl, M. Rieger, J. A. Majewski, G. Abstreiter
How to Convert Group-IV Semiconductors into Light Emitters
Physica Scripta T49, 476-482 (1993)
P. Vogl, M. M. Rieger, J. A. Majewski, G. Abstreiter
Influence of growth conditions on the photoluminescence of pseudomorphic MBE grown
J. of Crystal Growth 127, 443-446 (1993)
G. Abstreiter
Interface mode in Si/Ge superlattices: Theory and experiments
Phys. Rev. B 48 (1993)
S. D. Gironcoli, E. Molinari, R. Schorer, G. Abstreiter
Intersubband Absorption in Modulation Doped p-type Si/Si1-xGex Quantum Wells:
Proc. of the 5th Int Conf. on Solid State Devices and Materials (1993)
G. Abstreiter
Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement
Applied Surface Science 63, 260-265 (1993)
H. D. Geiler, S. Krügel, J. Nuetzel, E. Friess, G. Abstreiter
Luminescence Studies of Confined Excitons in Pseudomorphic Si/SiGe Quantum Wells Grown by Solid Source Molecular Beam Epitaxy
J. Vac. Sci. Technol. B 11 (1993)
J. Brunner, J. Nuetzel, M. Gail, U. Menczigar, G. Abstreiter
Luminescence studies of MBE grown Si/SiGe quantum wells
Mat. Res. Soc. Symp. Proc., 298, 21-26 (1993)
M. Gail, J. Brunner, U. Menczigar, A. Zrenner, G. Abstreiter
Micro-Raman scattering in ultrathin layer superlattices: evidence of zone centre anisotropy of optical phonons
Phys. Rev. B47 (1993)
G. Scamarcio, M. Haines, G. Abstreiter, E. Molinari, S. Baroni, A. Fischer, K. Ploog
Photoluminescence from GaAs/AlGaAs quantum wires and quantum dots
J. de Physique IV 3, 107-114 (1993)
K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, G. Weimann
Photoluminescence lineshape of narrow n-type modulation-doped quantum wells
Semicond. Sci. Technol. 8, 88-91 (1993)
R. Küchler, G. Abstreiter, G. Böhm, G. Weimann
Physics and Perspectives of Si/Ge Heterostructures and Superlattices
Physica Scripta T49, 42-45 (1993)
G. Abstreiter
Properties of Sn/Ge superlattices
Semicond. Sci. Technol. 8, S6-S8 (1993)
G. Abstreiter, J. Olajos, R. Schorer, P. Vogl, W. Wegscheider
Raman scattering of *-Sn/Ge superlattices on Ge (001)
J. Vac. Sci. Technol. B 11 (3), 1069-1072 (1993)
R. Schorer, W. Wegscheider, G. Abstreiter
Sn and Sb segregation and their possible use as surfactant for short-period Si/Ge superlattices
J. of Crystal Growth 127, 440-442 (1993)
W. Dondl, G. Lütjering, W. Wegscheider, J. Wilhelm, R. Schorer, G. Abstreiter
Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots
Semicond. Sci. Technol. 8, 617-621 (1993)
F. Hirler, R. Strenz, R. Küchler, G. Abstreiter, G. Böhm, J. Smoliner, G. Tränkle
Band gap luminescence in pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy
Thin Solid Films 222, 27-29 (1992)
J. Brunner, U. Menczigar, M. Gail, E. Friess, G. Abstreiter
Band-gap of strain-symmetrized, short-period Si/Ge superlattices
Phys. Rev. B 46 (1992)
J. Olajos, J. Engvall, H. G. Grimmeiss, U. Menczigar, G. Abstreiter, H. Kibbel, E. Kasper, H. Presting
Boron-Doped Silicon/Germanium Superlattices and Heterostructures
Thin Solid Films 222, 150-153 (1992)
J. Nuetzel, F. Meier, E. Friess, G. Abstreiter
Douple wavelength selective GaAs/AlGaAs infrared detector device
Appl. Phys. Lett. 60 (1992)
A. Köck, E. Gornik, G. Abstreiter, G. Böhm, M. Walther, G. Weimann
Electron intersubband absorption in modulation and well-doped Si/Si1-xGex multiple quantum wells
Thin Solid Films, 222, 20-23 (1992)
H. Hertle, F. Schäffler, A. Zrenner, E. Gornik, G. Abstreiter
Electronic structure and optical properties of short-period ?-SnnGen superlattices
Surface Science 267, 83-86 (1992)
P. Vogl, J. Olajos, W. Wegscheider, G. Abstreiter
Engineering the future of electronics
Physics World 5, Vol.5 (1992)
G. Abstreiter
Fabrication and properties of epitaxially stabilized Ge/*-Sn heterostructures on Ge(001).
J. of Crystal Growth 123, 75-94 (1992)
W. Wegscheider, J. Olajos, U. Menczigar, W. Dondl, G. Abstreiter
High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
Semicond. Sci. Technol. 7, 260-266 (1992)
F. Schäffler, D. Többen, H. J. Herzog, G. Abstreiter, B. Holländer
Inelastic light scattering of electronic excitations in quantum wells
Intersubband Transitions in Quantum Wells. Eds.: E. Rosench, B. Vinter and B. Levine. Plenum Press, N.Y., 1992. 261-262. (1992)
G. Abstreiter
In-plane Raman scattering of [001]-grown Si/Ge superlattices
Thin Solid Films, 222, 269-273 (1992)
R. Schorer, W. Wegscheider, K. Eberl, E. Kasper, H. Kibbel, G. Abstreiter
Interband absorption in ?-Sn/Ge short-period superlattices
Appl. Phys. Lett. 61 (26), 3130-3132 (1992)
J. Olajos, W. Wegscheider, G. Abstreiter
Interface-phonon dispersion and confined-optical-mode selection rules of GaAs/AlAs superlattices studied by micro-Raman spectroscopy
Phys. Rev. B46, Nr. 7, 4071-4076 (1992)
R. Heßmer, A. Huber, T. Egeler, M. Haines, G. Tränkle, G. Weimann, G. Abstreiter
Intersubband absorption in the conduction band of Si/Si1-xGex multiple quantum wells
Intersubband Transitions in Quantum Wells. Eds.: E. Rosencher, B. Vinter and B. Levine. Plenum Press, N.Y. 1992. 253-260. (1992)
H. Hertle, F. Schäffler, A. Zrenner, E. Gornik, G. Abstreiter
Luminescence Properties of GaAs Quantum Wells, Wires, Dots and Antidots
Optical Phenomena in Semiconductor Structures of Reduced Dimensions, Yountville, CA, USA, July 27-31, 1992. Eds.: D. J. Lockwood and A. Pinczuk Kluwer Academic Publishers, Dordrecht 1993. 327-335. (1992)
G. Abstreiter, G. Böhm, K. Brunner, F. Hirler, R. Strenz, G. Weimann
Magneto-Luminescence and Magneto-Luminescence Excitation Spectroscopy in Strained Layer Heterostructures
Solid-State Science 101: High Magnetic Fields in Semiconductor Physics III., Berlin 1992. 514-518 (1992)
R. Küchler, P. Hiergeist, G. Abstreiter, J. P. Reithmaier, H. Riechert, R. Lösch
Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1-xGex heterostructures
Phys. Rev. B46 (1992)
D. Többen, F. Schäffler, A. Zrenner, G. Abstreiter
Magnetotransport studies of remote doped Si/Si1-xGex heterostructures grown on relaxed SiGe buffer layers
Thin Solid Films, 222, 15-19 (1992)
D. Többen, F. Schäffler, A. Zrenner, G. Abstreiter
Observation of Interface Plasmon Modes in (GaAl)As Heterostructures by Raman Spectroscopy
Proc. of 21th Int. Conf. on the Physics of Semiconductors 1, 769-772, Beijing, China, August 10-14 (1992)
M. Haines, T. Egeler, G. Abstreiter, G. Böhm, G. Weimann
Optical characterization of GaAs/AlGaAs nanostructures fabricated by focussed laser beam induced thermal interdiffusion
Surface Science 267, 218-222 (1992)
K. Brunner, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle
Optical transitions in strained Ge/Si superlattices
Thin Solid Films 222, 246-250 (1992)
U. Schmid, J. Humlícek, F. Lukes, M. Cardona, H. Presting, H. Kibbel, E. Kasper, K. Eberl, W. Wegscheider, G. Abstreiter
Phosphorous doping in low temperature silicon molecular beam epitaxy
Appl. Phys. Lett. 60 (1992)
E. Friess, J. Nuetzel, G. Abstreiter
Photoluminescence from a Single GaAs/AlGaAs Quantum Dot
Phys. Rev. Lett. 69 (1992)
K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, G. Weimann
Photoluminescence studies of Si/Si1-xGex quantum wells and SimGen superlattices
Thin Solid Films, 222, 227-233 (1992)
U. Menczigar, J. Brunner, E. Friess, M. Gail, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper
Ramanscattering in Semiconductor Microstructures
Proc. of the 13th Int. Conf. on Raman Spectroscopy, Würzburg, 31 August-4 September, 1992. Eds.: W. Kiefer, M. Cardona, G. Schaack, F. W. Schneider, H. W. Schrötter. John Wiley and Sons, Chichester 1992 (1992)
G. Abstreiter
Sharp Doping profiles and two-dimensional electron systems in Ge based heterostructures
Surface Science 267, 90-93 (1992)
J. Wilhelm, W. Wegscheider, G. Abstreiter
Si/Ge Heterostructures and Superlattices: Bandstructure, Optical and Electronic Properties
Proc. of the 7th Int. Winter School Mauterndorf, Austria, February 24-28, 1992. Solid-State Sciences 111: Low-Dimensional Electronic Systems. Eds.: G. Bauer, F. Kuchar and H. Heinrich. Springer-Verla (1992)
G. Abstreiter
Silicon based heterostructures, quantum wells and superlattices
Proc. of 21th Int. Conf. on the Physics of Semiconductors 1, 827-834, Beijing, China, August 10-14 (1992)
G. Abstreiter, J. Brunner, F. Meier, U. Menczigar, J. Nuetzel, R. Schorer, D. Többen
Spatially direct and indirect optical transitions in GaAs/AlGaAs nanostructures of different dimensionalities
Proc. of 21th Int. Conf. on the Physics of Semiconductors 2, 1104-1107, Beijing, China, August 10-14 (1992)
R. Strenz, F. Hirler, R. Küchler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs quantum wires
Surface Science 263, 536-540 (1992)
F. Hirler, R. Küchler, R. Strenz, G. Abstreiter, G. Böhm, J. Smoliner, G. Tränkle
Temperature Distribution in Si-MOSFET's Studied by Micro Raman Spectroscopy
IEEE Transactions on Electron Devices 39 (1992)
R. Ostermeir, K. Brunner, G. Abstreiter, W. Weber
Zone Centre Anisotropy of Optical Phonons in Ultra-Thin Layer Superlattices Observed by Micro-Raman Spectroscopy
Proc. of 21th Int. Conf. on the Physics of Semiconductors 1, 863-866, Beijing, China, August 10-14 (1992)
G. Scamarcio, M. Haines, G. Abstreiter, E. Molinari, S. Baroni, K. Ploog
Comparison of Growth and Strain Relaxation of Si/Ge Superlattices under Compressive and Tensile Strain Field
Mat. Res. Soc. Symp. Proc. 220, 135-140 (1991)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
Group IV Element (Si, Ge and ?-Sn) Superlattices - Low Temperature MBE
J. of Crystal Growth 111, 882-888 (1991)
K. Eberl, W. Wegscheider, G. Abstreiter
High Electron Mobility in Modulation-Doped Si/SiGe Quantum Well Structures
Appl. Phys. Lett. 59 (1991)
G. Schuberth, F. Schäffler, M. Besson, G. Abstreiter, E. Gornik
High Resolution Imaging of Twin Intersections in Si/Ge Superlattices on Ge (001) Substrates
Proc. of the 7th Int. Conf. on Microscopy of Semiconducting Materials, Oxford, March 25-28, 1991. IOP Publishing Ltd, 1991. 21-26. (1991)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
Inelastic Light Scattering in Semiconductor Quantum Structures
Highlights in Condensed Matter Physics and Future Prospects. Ed.: L. Esaki. Plenum Press, N.Y., 1991. 191-207. (1991)
G. Abstreiter
Infrared Optical Properties and Band Structure of *-Sn/Ge Superlattices on Ge Substrates
Phys. Rev. Lett. 67 (1991)
J. Olajos, P. Vogl, W. Wegscheider, G. Abstreiter
Integrated wavelength-selective GaAs/AlGaAs multi-quantum-well detectors
Semicond. Sci. Technol. 6, C128-129 (1991)
A. Köck, E. Gornik, G. Abstreiter, G. Böhm, M. Walther, G. Weimann
Interface Phonons in GaAs/AlAs Superlattices Studied by Micro-Raman Spectroscopy
Superlattices and Microstructures, 9 (1991)
A. Huber, T. Egeler, W. Ettmüller, H. Rothfritz, G. Tränkle, G. Abstreiter
Intersubband Absorption and Real Space Electron Transfer in GaAs Quantum Wells
Resonant Tunneling in Semiconductors: Physics and Applications. Eds.: L.L. Chang, E. E. Mendez and C. Tejedor.Plenum Press, N.Y., 1991. 505-513. (1991)
G. Abstreiter, M. Besson, R. Heinrich, A. Köck, W. Schlapp, G. Weimann, R. Zachai
Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells
Mat. Res. Soc. Symp. Proc. 220, 379-381 (1991)
H. Hertle, G. Schuberth, E. Gornik, G. Abstreiter, F. Schäffler
Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells
Appl. Phys. Lett. 59 (1991)
H. Hertle, G. Schuberth, E. Gornik, G. Abstreiter, F. Schäffler
Micro-Raman Spectroscopy for Characterization of Semiconductor Devices
Appl. Surf. Science 50, p. 73-78 (1991)
G. Abstreiter
Micro-Raman spectroscopy for large in-plane wave vector excitations in quantum-well structures
Light scattering in semiconductor structures and superlattices. Eds.: D. J. Lockwood and J. F. Young. Plenum Press, N.Y., 1991. 561-569. (1991)
G. Abstreiter, S. Beeck, T. Egeler, A. Huber
Microscopic symmetry properties of (001) Si/Ge monolayer superlattices
Phys. Rev. B43 (1991)
K. Eberl, W. Wegscheider, R. Schorer, G. Abstreiter
Optical Properties of Type I and Type II GaAs/AlGaAs Nanostructures
Physics of Nanostructures, 301-308, Proc. of SUSSP38, St. Andrews, July-August 1991 (1991)
K. Brunner, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Photoreflectance and Resonant Raman Scattering in Short Period Si/Ge Superlattices on Ge (001) and Si (001)
Mat. Res. Soc. Symp. Proc. 220, 361-366 (1991)
U. Menczigar, K. Eberl, G. Abstreiter
Raman-microanalysis of strain and crystal orientation in laser-crystallized silicon
Fresenius J Anal Chem, 341, 166-170 (1991)
G. Kolb, T. Salbert, G. Abstreiter
Raman-Microprobe Study of Stress and Crystal Orientation in Laser-Crystallized Silicon
J. Appl. Phys. 69 (1991)
G. Kolb, T. Salbert, G. Abstreiter
Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts
Appl. Phys. Lett. 58, 1007-1009 (1991)
F. U. Herrmann, S. Beeck, G. Abstreiter, C. Hanke, C. Hoyler, L. Korte
Resonant Tunneling of Holes in Si/Si1-xGex Quantum Well Structures
Mat. Res. Soc. Symp. Proc. 220, 409-411 (1991)
G. Schuberth, G. Abstreiter, E. Gornik, F. Schäffler, J. F. Luy
Resonant Tunneling of Holes in Si/SixGe1-x Quantum-Well Structures
Phys. Rev. B43 (1991)
G. Schuberth, G. Abstreiter, E. Gornik, F. Schäffler, J. F. Luy
Stability and interdiffusion of short-period Si/Ge strained layer superlattices
J. Vac. Sci. Technol. B9 (1991)
E. Friess, R. Schorer, K. Eberl, G. Abstreiter
Strained layer heterostructures and superlattices based on group IV elements
Condensed Systems of Low-Dimensionality. Eds. J.L. Beeby, P. K. Bhattacharya, P. Ch. Gravelle, F. Koch and D. J. Lockwood. Plenum Press, N.Y., 1991. 471-480. (1991)
G. Abstreiter, K. Eberl, E. Friess, U. Menczigar, W. Wegscheider
Structural Stability of Short-Period Si/Ge Superlattices Studied with Raman Spectroscopy
Phys. Rev. B44 (1991)
R. Schorer, E. Friess, K. Eberl, G. Abstreiter
Symmetry Properties of Short Period (001) Si/Ge Superlattices
Superlattices and Microstructures, 9 (1991)
K. Eberl, W. Wegscheider, G. Abstreiter, H. Cerva, H. Oppolzer
Anisotropic Plasmon Dispersion in a Lateral Quantum-Wire Superlattice
Phys. Rev. Lett. 65 (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, P. Grambow
Band Offset in Elastically Strained InGaAs/GaAs Multiple Quantum Wells determined by Optical Absorption and Electronic Raman Scattering
Appl. Phys. Lett. 56 (1990)
J. P. Reithmaier, R. Höger, H. Riechert, A. Heberle, G. Abstreiter, G. Weimann
Confinement of Light Hole Valence-Band States in Pseudomorphic InGaAs/Ga(Al)As Quantum Wells
Appl. Phys. Lett. 57 (1990)
J. P. Reithmaier, R. Höger, H. Riechert, P. Hiergeist, G. Abstreiter
Grating Coupler Effects on Inelastic Light Scattering by Plasmons in Micro Structured GaAs MQW Systems
Surface Science 229, 391-393 (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp
Growth and Characterization of Ultrathin SimGen Strained Layer Superlattices
Proc. of Esprit Conference, Brussels (1990)
H. Presting, H. Kibbel, E. Kasper, M. Jaros, G. Abstreiter
High Resolution Micro Raman Spectroscopy of GaAs/AlGaAs Quantum Well Lasers in the Low Power Range
Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, September 24-27, 1990. IOP Publishing Ltd., 1990. 561-566. (1990)
S. Beeck, F. U. Herrmann, G. Abstreiter, C. Hanke, L. Korte
Highly Strained ?-Sn/Ge Superlattices - New Man-made Semiconductors
Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990. Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1685-1688 (1990)
W. Wegscheider, K. Eberl, U. Menczigar, J. Olajos, G. Abstreiter, P. Vogl
Inelastic Light Scattering by Electrons in Microstructured Quantum Wells
Solid State Sciences 97: Localization and Confinement of Electrons in Semiconductors, Springer-Verlag, Berlin 1990 (1990)
G. Abstreiter, T. Egeler
Local Temperature Distribution in Si-MOSFET`s Studied by Micro-Raman Spectroscopy
Proc. of the 20th ESSDERC, Nottingham, 1990, Bristol: Hilger, 591-594 (1990)
R. Ostermeir, K. Brunner, G. Abstreiter, W. Weber
Negative Infrared Photoconductivity in Narrow GaAs/AlGaAs Multiple Quantum Well Strucutres
Surface Science 228, 465-467 (1990)
R. Heinrich, R. Zachai, M. Besson, T. Egeler, G. Abstreiter, W. Schlapp, G. Weimann
New Relaxation Mechanism in Short Period Si/Ge Strained-Layer Superlattices
Mat. Res. Soc. Symp. Proc. Vol. 183 183, 155-160 (1990)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
Novel Relaxation Process in Strained Si/Ge Superlattices Grown on Ge (001)
Appl. Phys. Lett. 57 (1990)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
Optical Properties of Short Period Si/Ge Superlattices Grown on (001) Ge Studied with Photoreflectance
in 'Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization', ed. M. Razeghi Proc. of the SPIE `90, Vol. 1361, 282, Aachen (1990)
U. Menczigar, M. Dahmen, R. Zachai, K. Eberl, G. Abstreiter
Photoluminescence in Short Period Si/Ge Strained Layer Superlattices Grown on Si and Ge Substrates
Surface Science 228, 267-269 (1990)
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel
Photoluminescence in Short-Period Si/Ge Strained-Layer Superlattices
Phys. Rev. Lett. 64 (1990)
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel
Plasmon Excitations in lateral GaAs/(AlGa)As Quantum Wire Superlattices
Proc. of the 20th Int.Conf. on the Physics of Semiconductors (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp
Relevant Scattering Processes, Band Gap Renormalization and Moss-Burstein shift in Modulation Doped Narrow GaAs/AlGaAs Multiple Quantum Wells
Surface Science 229, 398-401 (1990)
U. Bockelmann, P. Hiergeist, G. Abstreiter, G. Weimann, W. Schlapp
Single-crystal Sn/Ge Superlattices on Ge Substrates: Growth and Structural Properties
Appl. Phys. Lett. 57 (1990)
W. Wegscheider, K. Eberl, U. Menczigar, G. Abstreiter
Single-Particle and Transport Scattering Times in Narrow GaAs/AlxGa1-xAs Quantum Wells
Phys. Rev. B41 (1990)
U. Bockelmann, G. Abstreiter, G. Weimann, W. Schlapp
Strain and Confinement Effects on Optical Phonons in Short Period (100) Si/Ge Superlattices
Solid State Communications 73 (1990)
E. Friess, K. Eberl, U. Menczigar, G. Abstreiter
Strain Effects on Valence Band States of Pseudomorphic InGaAs/Ga(Al)As Multiple Quantum Wells
Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, 1990. IOP Publishing Ltd., 1990. 197-200. (1990)
J. P. Reithmaier, H. Riechert, O. Heinrich, P. Hiergeist, G. Abstreiter
Supergitter und Heterostrukturen - Chancen für neue Bauelemente
Siemens Zeitschrift, Spezial (1990)
G. Abstreiter
Confined Optical Modes in Short Period (110) Si/Ge Superlattices
Solid State Communications 69 (1989)
E. Friess, H. Brugger, K. Eberl, G. Krötz, G. Abstreiter
Improvement of Structural Properties of Si/Ge Superlattices
Thin Solid Films 183, 95-103 (1989)
K. Eberl, E. Friess, W. Wegscheider, U. Menczigar, G. Abstreiter
Investigations of GaAs/AlGaAs Quantum Well lasers by Micro Raman Spectroscopy
Proc. of the 19th European Solid State Device Research Conference (1989)
S. Beeck, T. Egeler, G. Abstreiter, H. Brugger, P. W. Epperlein, D. J. Webb, C. Hanke
Local Operating Temperatures in GaAs Quantum Well Lasers
Proc. of the 16th Int. Symp. on GaAs and Related Compounds, Karuizawa, Japan, September 25-29, 1989. Ed.: T. Ikoma and H. Watanabe. IOP Publishing Ltd., 1990. 771-776. (1989)
H. Brugger, P. W. Epperlein, S. Beeck, G. Abstreiter
Phonons and Optical Properties of Si/Ge Superlattices
Spectroscopy of Semiconductor Microstructures, Venice, Italy, May 9-13, 1989. Eds.: G. Fasol, A. Fasolino, and P. Lugli. Plenum Press, N.Y. 1989. 165-174. (1989)
G. Abstreiter, K. Eberl, E. Friess, U. Menczigar, W. Wegscheider, R. Zachai
Picosecond Intersubband Spectroscopy
Superlattices and Microstructures 5 (1989)
A. Seilmeier, M. Wörner, G. Abstreiter, G. Weimann, W. Schlapp
Plasmon Excitations in Layered 2D Electron Gas Systems with Large In-Plane Wave Vector
Superlattices and Microstructures 5 (1989)
T. Egeler, S. Beeck, G. Abstreiter, G. Weimann, W. Schlapp
Realization of Short Period Si/Ge Strained-Layer Superlattices
Heterostructures on Silicon: One Step Further with Silicon. Eds.: Y.I. Nissim and E. Rosencher. Kluwer Academic Publishers, 1989. 153-160. (1989)
K. Eberl, W. Wegscheider, E. Friess, G. Abstreiter
Si-Ge Strained Layer Superlattices
Thin Solid Films 183, 8-Jan (1989)
G. Abstreiter
Silicon/Germanium Strained Layer Superlattices
J. of Crystal Growth 95, 431-438 (1989)
G. Abstreiter, K. Eberl, E. Friess, W. Wegscheider, R. Zachai
Spectroscopy of Free Carrier Excitations in Semiconductor Quantum Wells
Topics in Applied Physics 66: Light Scattering in Solids V. Eds.: M. Cardona, G. Güntherodt. Springer-Verlag, Berlin 1989. 153-211 (1989)
A. Pinczuk, G. Abstreiter
Strain at Si-Si02 Interfaces Studied by Micro-Raman Spectroscopy
Appl. Surf. Science 39, 116-126 (1989)
K. Brunner, G. Abstreiter, B. O. Kolbesen, H. W. Meul
Annealing Effects in short period Si-Ge strained layer superlattices
Semicond. Sci. Technol. 3, 1166-1170 (1988)
H. Brugger, E. Friess, G. Abstreiter, E. Kasper, H. Kibbel
Direct Observation of Intersubband Relaxation in Narrow Multiple Quamtum Well Structures
Solid-State Electronics 31, 767-770 (1988)
A. Seilmeier, H. J. Hübner, M. Wörner, G. Abstreiter, G. Weimann, W. Schlapp
Electronic Excitations in Narrow GaAs/AlxGa1-xAs Quantum Well Structures
Surface Science 196, 613-618 (1988)
G. Abstreiter, T. Egeler, S. Beeck, A. Seilmeier, H. J. Hübner, G. Weimann, W. Schlapp
Interface Roughness Scattering and Electron Mobilities in Thin GaAs Quantum Wells
Europhys. Letters 6 (1988)
R. Gottinger, A. Gold, G. Abstreiter, G. Weimann, W. Schlapp
Strain Adjustment in Si/SiGe Superlattices
Mat.Res.Soc.Symp.Proc. 102, Vol. 102, 393-403 (1988)
E. Kasper, H. J. Herzog, H. Jorke, G. Abstreiter
Symmetrically strained Si/Ge superlattices on Si substrates
Phys. Rev. B38 (1988)
E. Kasper, H. Kibbel, H. Jorke, H. Brugger, E. Friess, G. Abstreiter
Intersubband Relaxation in GaAs/AlxGa1-xAs Quantum Well Structures Observed Directly by an Infrared Bleacing Technique
Phys. Rev. Lett. 59 (1987)
A. Seilmeier, H. J. Hübner, G. Abstreiter, G. Weimann, W. Schlapp
Pseudomophic growth of SixGe1-x on GaAs (110)
Semicond. Sci. Technol. 2, 561-567 (1987)
K. Eberl, G. Krötz, T. Wolf, F. Schäffler, G. Abstreiter
Raman Spectroscopy for the Study of Semiconductor Heterostructures and Superlattices
Physics and Applications of Quantum Wells and Superlattices. Eds.: E.E. Mendez and K. von Klitzing. Plenum Press, N.Y. 1987. 301-315. (1987)
G. Abstreiter
Si-Ge Strained Layer Superlattices
Journal de Physique C5 (1987)
H. Brugger, G. Abstreiter
Silicon-Germanium Superlattices
SPIE 792, Vol. 792, Quantum Well and Superlattice Physics, 77-85 (1987)
G. Abstreiter, H. Brugger, K. Eberl, R. Zachai
Strained Layer Si/SiGe Superlattices
Superlattices and Microstructures 3 (1987)
E. Kasper, H. J. Herzog, H. Jorke, G. Abstreiter
Structural, Compositional, and Optical Properties of Ultrathin Si/Ge Superlattices
Journal de Physique C5, 329-332 (1987)
K. Eberl, G. Krötz, R. Zachai, G. Abstreiter
Dispersion of Folded Phonons in Si/SixGe1-x Superlattices
Superlattices and Microstructures 2 (1986)
H. Brugger, H. Reiner, G. Abstreiter, H. Jorke, H. J. Herzog, E. Kasper
Electric Subbands in Si/SiGe Strained Layer Superlattices
Z. Physik B64, 137-143 (1986)
C. Zeller, G. Abstreiter
Electric-field-induced Raman scattering:Resonance, temperature, and screening effects
Phys. Rev. B34 (1986)
F. Schäffler, G. Abstreiter
Equally Strained Si/SiGe Superlattices on Si Substrates
Mat. Res. Soc. Symp. 56, 347-357 (1986)
E. Kasper, H. J. Herzog, H. Daembkes, G. Abstreiter
Folded acoustic phonons in Si/SixGe1-x Superlattices
Phys. Rev. B33, 5928-5930 (1986)
H. Brugger, G. Abstreiter, H. Jorke, H. J. Herzog, E. Kasper
Inelastic Light Scattering by Electronic Excitations in Semiconductor Heterostructures
IEEE QE22, 1771-1784 (1986)
G. Abstreiter, R. Merlin, A. Pinczuk
Internal Photoemission - A Suitable Method for Determining Band Offsets in Semiconductor Heterostructures
Surface Science 174, 312-317 (1986)
G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp
Light Scattering in Novel Layered Semiconductor Structures
Festkörperprobleme (Advances in Solid State Physics) 26, 41-53 (1986)
G. Abstreiter
Optical and Electronic Properties of Si/SiGe Superlattices
Solid State Sciences 67: Two-Dimensional Systems:Physics and New Devices., F. Kuchar, and H. Heinrich. Springer-Verlag, Berlin 1986. 130-139. (1986)
G. Abstreiter, H. Brugger, T. Wolf, R. Zachai, C. Zeller
Raman Scattering at Interfaces
Optical Properties of Narrow-Gap Low-Dimensional Structures. Eds.: C.M. Sotomayor Torres, J. C. Portal, J.C. Maan, R.A. Stradling. Plenum Press, N.Y.1986. 269-278. (1986)
G. Abstreiter
Raman Scattering for Studies of Semiconductor-Heterostructures and Superlattices
Proc. of the 18th Int. Conf. on the Physics of Semiconductor 1, Stockholm, Sweden, August 11-15, 1986. Ed.: O. Engström. World Scientific, Singapore 1987. Vol. 1, 739-746. (1986)
G. Abstreiter, H. Brugger
Semiconductor Heterostructures
Siemens Forsch- und Entwickl.-Ber. Bd. 15 (1986)
G. Abstreiter
Two-Dimensional Electron Systems in Si/SixGe1-x Strained-Layer Superlattices
Surface Science 174, 640-645 (1986)
G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog
Formation of metal-semiconductor interfaces: From the submonolayer regime to the real Schottky barrier
J. Vac. Sci. Technol. B3 (1985)
F. Schäffler, G. Abstreiter
Internal Photoemission in GaAs/(AlxGa1-x)As Heterostructures
Physica 134B, 433- 438 (1985)
G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp
Light scattering in semiconductor heterostructures
Molecular Beam Epitaxy (MBE) and Heterostructures. Eds.: L. L. Chang and K. Ploog. Martinus Nijhoff Publishers, Dordrecht 1985. 425-459. (1985)
G. Abstreiter
Light scattering studies of semiconductor heterostructures
J. Vac. Sci. Technol. B3 (1985)
G. Abstreiter
Phonon Properties of SixGe1-x Strained Overlayers on (110) GaAs
Journal de Physique, MRS Europe, 209-212 (1985)
H. Brugger, G. Abstreiter
Raman Scattering by Free Carriers in Semiconductor Heterostructures
Proc. of the Winter School on Heterojunctions and Semiconductor Superlattices, Les Houches, France, March 12-21, 1985. Eds.: G. Allan, G. Bastard, N. Boccara, M. Lannoo, and M. Voos. Springer-Verlag, Berlin 1986. 99-107. (1985)
G. Abstreiter
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixGe1-x Superlattices
Phys. Rev. Lett. 54 (1985)
G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog
Tunable electroluminescence in GaAs-doping multilayer structures
J. Vac. Sci. Technol. B3 (1985)
G. Abstreiter, H. Kirchstetter, K. Ploog
Hole sub-bands on silicon surfaces
J. Phys. C:Solid State Phys. 17, 1617-1631 (1984)
M. Baumgartner, G. Abstreiter, E. Bangert
In Situ Investigation of Band Bending during Formation of GaAs-Ge Heterostructures
Phys. Rev. Lett. 52 (1984)
H. Brugger, F. Schäffler, G. Abstreiter
Inelastic Light Scattering in Semiconductor Heterostructures
Festkörperprobleme (Advances in Solid State Physics) 24, 291-309 (1984)
G. Abstreiter
Interaction between Electronic and Phonon Raman Scattering in Hole Space Charge Layers on Silicon
Surface Science 142, 357-360 (1984)
M. Baumgartner, G. Abstreiter
Light Scattering by Free Carrier Excitations in Semiconductors
Topics in Applied Physics 54: Light Scattering in Solids IV. Eds.: M. Cardona and G. Güntherodt. Springer-Verlag, Berlin 1984. 5-150. (1984)
G. Abstreiter, M. Cardona, A. Pinczuk
Luminescence and Inelastic Light Scattering in GaAs Doping Superlattices
Solid-State Sciences 53: Two-Dimensional Systems, Heterostructures, and Superlattices. Eds.: G. Bauer, F. Kuchar, and H. Heinrich. Springer-Verlag, Berlin 1984. 232-239. (1984)
G. Abstreiter
Raman Spectroscopy of Semiconductor Surfaces and Heterostructures
Proc. of the 9th Int.Conf. on Raman Spectroscopy, Tokyo, August 27 - September 1, 1984. 386-387 (1984)
G. Abstreiter
Resonant Tunneling in Doping Quantum Well Structures
Surface Science 142, 456-459 (1984)
C. Zeller, G. Abstreiter, K. Ploog
Resonant tunneling in MBE-grown pnp-GaAs quantum well structures
Inst. Phys. Conf. Ser. No. 74, Chapter 5, 339-344 (1984)
U. Prechtel, C. Zeller, G. Abstreiter, K. Ploog
Surface Barrier Formation on (110) GaAs Studied with Raman Spectroscopy
Proc. of the 17th Int.Conf. on the Physics of Semiconductors, San Francisco, USA, August 6-10, 1984. Eds.: J. D. Chadi and W.A. Harrison. Springer-Verlag, N.Y. 1985. 205-208. (1984)
F. Schäffler, H. Brugger, G. Abstreiter
Fermi Level Pinning on Clean and Covered GaAs (110) Surfaces Studied by Electric-Field Induced Raman Scattering
Chemical Physics 33: Surface Studies with Lasers, 131-134 (1983)
F. Schäffler, G. Abstreiter
Quantization of Photo-excited carriers in GaAs Doping Superlattices
Physica 117B and 118B, 729-731 (1983)
C. Zeller, B. Vinter, G. Abstreiter, K. Ploog
Subband Energies in Accumulation Layers on InP
Solid State Communications 47 (1983)
G. Abstreiter, R. Huber, G. Tränkle, B. Vinter
Inelastic Light Scattering in Hole-Accumulation Layers on Silicon
Solid State Communications 44 (1982)
G. Abstreiter, U. Claessen, G. Tränkle
Quantization of Photoexcited Electrons in GaAs nipi-Crystals
Surface Science 113, 479-480 (1982)
G. Abstreiter, G. H. Döhler, H. Künzel, D. Olego, K. Ploog, R. Ruden, H. J. Stolz
Quasi-two-dimensional photoexcited carriers in GaAs doping superlattices
Phys. Rev. B26 (1982)
C. Zeller, B. Vinter, G. Abstreiter, K. Ploog
The Influence of Temperature and Incident Light Intensity on Single Particle and Collective Excitations in Multilayer Structures
Surface Science 113, 85-88 (1982)
C. Zeller, G. Abstreiter, K. Ploog
Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs Superlattice
Phys. Rev. Lett. 47 (1981)
G. H. Döhler, H. Künzel, D. Olego, K. Ploog, P. Ruden, H. J. Stolz, G. Abstreiter
Study of GaAs-AlxGa1-xAs Multilayer Systems by Resonant Inelastic Light Scattering Techniques
Inst. Phys. Conf. Ser. No. 56: Chapter 9, 741-749 (1981)
G. Abstreiter, C. Zeller
Determination of Existing Stress in Silicon Films on Sapphire Substrate Using Raman Spectroscopy
Solid-State Electronics 23, 31-33 (1980)
T. Englert, G. Abstreiter, J. Pontcharra
Dynamical effects of the interaction between 4f electrons and optical phonons in rare-earth hydroxides, especially in Tb(OH)3 and Nd(OH)3
J. Phys. C: Solid State Phys. 13, 4545-4564 (1980)
K. Ahrens, H. Gerlinger, H. Lichtblau, G. Schaack, G. Abstreiter, S. Mroczkowski
Electronic Properties of the Two-Dimensional System at GaAs/Alx-Ga1-xAs Interfaces
Surface Science 98, 117-125 (1980)
G. Abstreiter
Magnetic Bragg Scattering in Antiferromagnets Observed through Raman Scattering from Phonons
J. of Magnetism and Magn. Mat. 15-18, 777-778 (1980)
G. Güntherodt, G. Abstreiter, W. Bauhofer, G. Benedek, E. Anastassakis
Raman Scattering in a Magnetic Semiconductor
J. of Magnetism and Magn. Mat. 15-18, 821-822 (1980)
G. Güntherodt, R. Merlin, G. Abstreiter
Raman-, LEED- and Auger Spectroscopy of Clean and Oxidized (110) -GaAs -Surfaces
J. Phys. Soc. Japan 49, A, 1101-1104 (1980)
H. J. Stolz, G. Abstreiter
Surface Band bending on Clean and Oxidized (110) - GaAs Studied by Raman Spectroscopy
Solid State Communications 36, 857-860 (1980)
H. J. Stolz, G. Abstreiter
Coupled Plasmon-L0 Phonon Modes and Lindhard-Mermin Dielectric Function of n-GaAs
Solid State Communications 30, 703-707 (1979)
G. Abstreiter, R. Trommer, M. Cardona, A. Pinczuk
Effects of Uniaxial Stress on the Cyclotron Resonance in Inversion Layers on Si (100)
Solid State Communications 32, 655-658 (1979)
P. Stallhofer, J. P. Kotthaus, G. Abstreiter
Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-
Phys. Rev. Lett. 42 (1979)
G. Abstreiter, K. Ploog
Phonon Raman Scattering from Spin Superstructures: Magnetic Bragg Scattering
J. of Magnetism and Magn. Mat. 13, 187-188 (1979)
G. Güntherodt, R. Merlin, W. Bauhofer, G. Abstreiter
Resonance Enhancement of Raman Scattering by Electron-Gas Excitations of n-GaAs
Solid State Communications 30, 429-432 (1979)
A. Pinczuk, G. Abstreiter, R. Trommer, M. Cardona
Raman Spectroscopy - A Versatile Tool for Characterization of Thin Films and Heterostructures of GaAs and AlxGa1-xAs
Applied Physics 16, 345-352 (1978)
G. Abstreiter, E. Bauser, A. Fischer, K. Ploog
Anti-Stokes Luminescence in Europium Monochalcogenides
Solid State Communications 22, 609-613 (1977)
R. Merlin, R. Tsu, G. Güntherodt, G. Abstreiter, M. W. Shafer
Forbidden Raman Scattering by L0 Phonons in GaAs
Proc. of the 2nd Int. Conf. on Lattice Dynamics, Paris, September 5-9, 1977. Ed.: M. Balkanski. Flammarion, Paris 1978. 189-191. (1977)
R. Trommer, G. Abstreiter, M. Cardona
Raman Scattering by Wavevector Dependent Coupled Plasmon - L0 Phonons of n-GaAs
Solid State Communications 21, 959-962 (1977)
A. Pinczuk, G. Abstreiter, R. Trommer, M. Cardona
Raman Scattering Studies of Coupled Plasmon-L0 Phonon Modes in n-GaAs
Proc. of the 2nd Int. Conf. on Lattice Dynamics, Paris, September 5-9, 1977. Ed.: M. Balkanski. Flammarion, Paris 1978. 191-192. (1977)
G. Abstreiter, A. Pinczuk, R. Trommer, M. Cardona
Cyclotron resonance of electrons in surface space-charge layers on silicon
Phys. Rev. B14 (1976)
G. Abstreiter, J. P. Kotthaus, J. F. Koch, G. Dorda
Electrons in a Surface Space Charge Layer on Germanium-Shubnikov-de Haas Oscillations and Cyclotron Resonance
Solid State Communications 18, 1397-1399 (1976)
W. Weber, G. Abstreiter, J. F. Koch
Frequency dependence of surface cyclotron resonance in Si
Phys. Rev. B14 (1976)
G. Abstreiter, J. F. Koch, P. Goy, Y. Couder
Raman Scattering by Longitudinal Modes in Opaque n-GaAs
Proc. of the 13th Int. Conf. on the Physics of Semiconductors, Rome, August 30 - September 3, 1976. Ed.: F. G. Fumi. Tipografia Marves, Rome 1976. 779-782. (1976)
G. Abstreiter, A. Pinczuk, R. Trommer, R. Tsu
Cyclotron Resonance of Localized Electrons on a Si Surface
Phys. Rev. Lett. 34 (1975)
J. P. Kotthaus, G. Abstreiter, J. F. Koch, R. Ranvaud
Cyclotron Resonance of Electrons in an Inversion Layer on Si
Phys. Rev. Lett. 32 (1974)
G. Abstreiter, P. Kneschaurek, J. P. Kotthaus, J. F. Koch
Subharmonic Structure of Cyclotron Resonance in an Inversion Layer on Si
Solid State Communications 15, 517-519 (1974)
J. P. Kotthaus, G. Abstreiter, J. F. Koch
Influence of electron capture decay of 57Co on the Mössbauer emission spectrum of hydrated cobalt chlorides
J. Chem Phys. 59 (1973)
J. M. Friedt, G. K. Shenoy, G. Abstreiter, R. Poinsot
Nuclear parameters of the 140 keV Mössbauer level in 99Tc from Mössbauer spectroscopy
J. Phys. A6, L144-L147 (1973)
G. K. Shenoy, G. Abstreiter, G. M. Kalvius, K. Schwochau, K. H. Linse





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