Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


Prof. Dr. Gerhard Abstreiter

Prof. Dr. Gerhard Abstreiter
TUM Emeritus of Excellence

Room Z1.018
Tel.: (+49) 089 289 11570


Publications

Break-down of corner states and carrier localization by monolayer fluctuations in radial nanowire quantum wells
Nano Letters 19, 3336 (2019)
M. M. Sonner, A. Sitek, L. Janker, D. Rudolph, D. Ruhstorfer, M. Döblinger, A. Manolescu, G. Abstreiter, J. J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner
Online Ref
Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires
Phys. Rev. B 97, 115306 (2018)
J. Becker, S. Morkoetter, J. Treu, M. Sonner, M. Speckbacher, M. Doeblinger, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref
GaAs-AlGaAs core-shell nanowire lasers on silicon: Invited Review
Semicond. Sci. Techol. Topical Review (2017)
G. Koblmueller, B. Mayer, T. Stettner, G. Abstreiter, J. Finley
Online Ref
Quantum transport and sub-band structure of modulation-doped GaAs/AlAs core-superlattice nanowires
Nano Lett., 4886 (2017)
D. Irber, J. Seidl, D. Carrad, J. Becker, N. Jeon, B. Loitsch, J. Winnerl, S. Matich, M. Doeblinger, Y. Tang, S. Morkötter, G. Abstreiter, J. Finley, M. Grayson, L. J. Lauhon, G. Koblmueller
Online Ref
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
Appl. Phys. Lett. 108, 11108 (2016)
T. Stettner, P. Zimmermann, B. Loitsch, M. Döblinger, A. Regler, B. Mayer, J. Winnerl, S. Matich, H. Riedl, M. Kaniber, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires
Appl. Phys. Lett. 108, 71107 (2016)
B. Mayer, L. Janker, D. Rudolph, B. Loitsch, T. Kostenbader, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Coulomb mediated hybridization of excitons in coupled quantum dots
Physical Review Letters 116, 77401 (2016)
P. L. Ardelt, K. Gawarecki, K. Mueller, A. Waeber, A. Bechtold, K. Oberhofer, J. M. Daniels, F. Klotz, M. Bichler, T. Kuhn, H. Krenner, P. Machnikowski, G. Abstreiter, J. Finley
Online Ref
Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires
Nano Lett. 16, 5135 (2016)
M. Speckbacher, J. Treu, T. J. Whittles, W. M. Linhart, X. Xu, K. Saller, V. R. Dhanak, G. Abstreiter, J. Finley, T. D. Veal, G. Koblmueller
Online Ref
Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization
New J. Phys, 63009 (2016)
B. Loitsch, M. Mueller, J. Winnerl, P. Veit, D. Rudolph, G. Abstreiter, J. Finley, F. Bertram, J. Christen, G. Koblmueller
Online Ref
Monolithically integrated high-beta nanowire lasers on silicon
Nano Letters 16, 152 (2016)
B. Mayer, L. Janker, B. Loitsch, J. Treu, T. Kostenbader, S. Lichtmannecker, T. Reichert, S. Morkötter, M. Kaniber, G. Abstreiter, C. Gies, G. Koblmueller, J. Finley
Online Ref
Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires
Appl. Phys. Lett. (2016)
B. Loitsch, N. Jeon, M. Döblinger, J. Winnerl, E. Parzinger, S. Matich, U. Wurstbauer, H. Riedl, G. Abstreiter, J. Finley, L. J. Lauhon, G. Koblmueller
Online Ref
The native material limit of electron and hole mobilities in semiconductor nanowires
ACS Nano, 4942 (2016)
J. B. Kinzel, F. J. R. Schuelein, M. Weiss, L. Janker, D. D.  Buehler, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. Krenner
Online Ref
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
Appl. Phys. Lett., 53110 (2016)
J. Treu, M. Speckbacher, K. Saller, S. Morkötter, M. Doeblinger, X. Xu, H. Riedl, G. Abstreiter, J. Finley, G. Koblmueller
Online Ref
Alloy Fluctuations Act as Quantum Dot-like Emitters in GaAs-AlGaAs Core–Shell Nanowires
ACS Nano 9, 8335 (2015)
N. Jeon, B. Loitsch, S. Morkötter, G. Abstreiter, J. Finley, H. Krenner, G. Koblmueller, L. Lauhon
Online Ref
Crystal phase quantum dots in the ultrathin core of GaAs-AlGaAs core-shell nanowires
Nano Letters 15, 7544 (2015)
B. Loitsch, J. Winnerl, G. Grimaldi, J. Wierzbowski, D. Rudolph, S. Morkötter, M. Doeblinger, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors
Nano Letters 15, 3295 (2015)
S. Morkötter, N. Jeon, D. Rudolph, B. Loitsch, D. Spirkoska, E. Hoffmann, M. Doeblinger, S. Matich, J. Finley, L. J. Lauhon, G. Abstreiter, G. Koblmueller
Online Ref
Lattice-matched InGaAs-InAlAs core-shell nanowires with improved luminescence and photoresponse properties
Nano Letters (2015)
J. Treu, T. Stettner, M. Watzinger, S. Morkötter, M. Doeblinger, S. Matich, K. Saller, M. Bichler, G. Abstreiter, J. Finley, J. Stangl, G. Koblmueller
Online Ref
Photocurrents in a single InAs nanowire/ silicon heterojunction
ACS Nano 9, 9849 (2015)
A. Brenneis, J. Overbeck, J. Treu, S. Hertenberger, S. Morkötter, M. Döblinger, J. Finley, G. Abstreiter, G. Koblmueller, A. Holleitner
Online Ref
Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse-Reaction Growth
Advanced Materials 27, 2195 (2015)
B. Loitsch, D. Rudolph, S. Morkötter, M. Doeblinger, G. Grimaldi, L. Hanschke, S. Matich, E. Parzinger, U. Wurstbauer, G. Abstreiter, J. Finley, G. Koblmueller
Online Ref
Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires
Nano Letters 15, 6869–6874 (2015)
N. Erhard, S. Zenger, S. Morkötter, D. Rudolph, M. Weiss, H. Krenner, H. Karl, G. Abstreiter, J. Finley, G. Koblmueller, A. Holleitner
Online Ref
Dissipative preparation of the exciton and biexciton in self-assembled quantum dots on picosecond timescales
Phys. Rev. B 90, 241404 (2014)
P. L. Ardelt, L. Hanschke, K. A. Fischer, K. Mueller, A. Kleinkauf, M. Koller, A. Bechtold, T. Simmet, J. Wierzbowski, H. Riedl, G. Abstreiter, J. Finley
Online Ref
Dynamic acoustic control of individual optically active quantum dot-like emission centers in heterostructure nanowires
Nano Letters, 2256 (2014)
M. Weiss, J. B. Kinzel, F. J. R. Schuelein, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. J. Krenner
Online Ref
Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires
Appl. Phys. Lett., 33111 (2014)
D. Rudolph, L. Schweickert, S. Morkötter, B. Loitsch, S. Hertenberger, J. Becker, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller
Online Ref
Pressure dependence of Raman spectrum in InAs nanowires
J. Phys. Cond. Matt, 235301 (2014)
S. Yazji, I. Zardo, S. Hertenberger, S. Morkötter, G. Koblmueller, G. Abstreiter, P. Postorino
Radio frequency occupancy state control of single nanowire quantum dot
J. Phys. D: Appl. Phys. (2014)
M. Weiss, F. J. R. Schuelein, J. B. Kinzel, M. Heigl, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner
Online Ref
Probing ultrafast carrier tunneling dynamics in individual quantum dots and molecules
Annalen der Physik 525, 49-58 (2013)
K. Mueller, A. Bechtold, C. Ruppert, T. Kaldewey, M. Zecherle, J. S. Wildmann, M. Bichler, H. J. Krenner, J. M. Villas‐Bôas, G. Abstreiter, M. Betz, J. J. Finley
Online Ref
Enhanced luminescence properties of InAs-InAsP core-shell nanowires
Nano Letters 13, 6070 (2013)
J. Treu, M. Bormann, H. Schmeiduch, M. Doeblinger, S. Morkötter, S. Matich, P. Wiecha, K. Saller, B. Mayer, M. Bichler, M. C. Amann, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room-temperature
Nature Comm., 2931 (2013)
B. Mayer, D. Rudolph, J. Schnell, S. Morkötter, J. Winnerl, J. Treu, K. Mueller, G. Bracher, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Laterally self-ordered silicon-germanium islands with optimized confinement properties
Appl. Phys. Lett. 103, 63105 (2013)
T. Zabel, N. Sircar, N. Hauke, J. Zweck, M. Döblinger, M. Kaniber, J. Finley, G. Abstreiter, D. Bougeard
Online Ref
Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces
102 (2013)
A. Bora, A. Pathak, K. C. Liao, M. I. Vexler, A. Kuligk, A. Cattani-Scholz, B. Meinerzhagen, G. Abstreiter, J. Schwartz, M. Tornow
Online Ref
Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires
New J. Phys., 113032 (2013)
D. Rudolph, L. Schweickert, S. Morkötter, L. Hanschke, S. Hertenberger, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley
Online Ref
Probing ultrafast carrier tunneling dynamics in individual quantum dots and molecules
(2013)
K. Mueller, A. Bechtold, C. Ruppert, T. Kaldewey, M. Zecherle, J. Wildmann, M. Bichler, H. Krenner, J. M. Villas-Boas, G. Abstreiter, M. Betz, J. Finley
Online Ref
Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap
Phys. Rev. B, 205303 (2013)
S. Morkötter, S. Funk, M. Liang, M. Doeblinger, S. Hertenberger, J. Treu, D. Rudolph, A. Yadav, J. Becker, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. Finley, G. Abstreiter, G. Koblmueller
Spontaneous alloy composition ordering in GaAs-AlGaAs core-shell nanowires
Nano Letters, 1522 (2013)
D. Rudolph, S. Funk, M. Doeblinger, S. Morkötter, S. Hertenberger, L. Schweickert, J. Becker, S. Matich, M. Bichler, D. Spirkoska, I. Zardo, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Ultrafast photocurrents and THz generation in single InAs nanowires
(2013)
N. Erhard, P. Seifert, L. Prechtel, S. Hertenberger, H. Karl, G. Abstreiter, G. Koblmueller, A. Holleitner
Online Ref
All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current
Scientific Reports 3, 1906 (2013)
K. Mueller, T. Kaldewey, R. Ripszam, J. Wildmann, A. Bechtold, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley
Online Ref
A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands
New J. Phys. 14, 83035 (2012)
N. Hauke, A. Tandaechanurat, T. Zabel, T. Reichert, H. Takagi, M. Kaniber, S. Iwamoto, D. Bougeard, J. Finley, G. Abstreiter, Y. Arakawa
Online Ref
All optical preparation, storage, and readout of a single spin in an individual quantum dot
No Reference given. 8272 (2012)
V. Jovanov, F. Klotz, S. Kapfinger, D. Heiss, S. Spiga, D. Rudolph, M. Bichler, M. S. Brandt, G. Abstreiter, J. Finley
Online Ref
Electrical Control of Interdot Electron Tunneling in a Double InGaAs Quantum-Dot Nanostructure
(2012)
K. Mueller, A. Bechtold, C. Ruppert, M. Zecherle, G. Reithmaier, M. Bichler, H. Krenner, G. Abstreiter, A. Holleitner, J. M. Villas-Boas, J. Finley
Online Ref
Enlarged magnetic focusing radius of photoinduced ballistic currents
Phys. Rev. B 86, 115315 (2012)
M. Stallhofer, C. Kastl, M. Brändlein, D. Schuh, W. Wegscheider, J. Kotthaus, G. Abstreiter, A. Holleitner
Online Ref
Few electron double quantum dot in an isotopically purified 28Si quantum well
Applied Physics Letters 100, 143110 (2012)
A. Wild, J. Kierig, J. Sailer, J. Ager, E. Haller, G. Abstreiter, S. Ludwig, D. Bougeard
Online Ref
Fluctuation induced luminescence sidebands in the emission spectra of resonantly driven quantum dots
arXiv:1207.6952 (2012) (2012)
F. Laussy, V. Jovanov, E. del Valle, A. Bechtold, S. Kapfinger, K. Mueller, S. Koch, A. Laucht, T. Eissfeller, M. Bichler, G. Abstreiter, J. Finley
Online Ref
High composition homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
Appl. Phys. Lett. 101, 43116 (2012)
S. Hertenberger, S. Funk, K. Vizbaras, A. Yadav, D. Rudolph, J. Becker, S. Bolte, M. Doeblinger, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. Finley, M. C. Amann, G. Abstreiter, G. Koblmueller
Online Ref
High fidelity optical preparation and coherent Larmor precession of a single hole in an InGaAs quantum dot molecule
85 (2012)
K. Mueller, A. Bechtold, C. Ruppert, C. Hautmann, J. Wildmann, T. Kaldewey, M. Bichler, H. Krenner, G. Abstreiter, M. Betz, J. Finley
Online Ref
Highly nonlinear excitonic Zeeman spin splitting in composition-engineered artificial atoms
Phys. Rev. B 85, 165433 (2012)
V. Jovanov, T. Eissfeller, S. Kapfinger, E. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, M. S. Brandt, G. Abstreiter, J. Finley
Online Ref
Molecular Architecture: Construction of Self-Assembled Organophosphonate Duplexes and Their Electrochemical Characterization
28, 7889-7896 (2012)
A. Cattani-Scholz, K. C. Liao, A. Bora, A. Pathak, C. Hundschell, B. Nickel, J. Schwartz, G. Abstreiter, M. Tornow
Online Ref
Pressure Tuning of the Optical Properties of GaAs Nanowires
ACS Nano 6, 3284-3291 (2012)
I. Zardo, S. Yazji, C. Marini, E. Uccelli, A. Fontcuberta i Morral, G. Abstreiter, P. Postorino
Online Ref
Probing ultrafast charge and spin dynamics in a quantum dot molecule
Proc. of SPIE Vol. 8260 8260, 826002 (2012)
K. Mueller, A. Bechtold, C. Ruppert, H. Krenner, M. Bichler, J. M. Villas-Boas, G. Abstreiter, M. Betz, J. Finley
Online Ref
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
Nanotechnology, 235602 (2012)
S. Hertenberger, D. Rudolph, J. Becker, M. Bichler, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Size, composition and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy
Appl. Phys. Lett., 233102 (2012)
T. Yang, S. Hertenberger, S. Morkötter, G. Abstreiter, G. Koblmueller
Online Ref
Time-resolved photoinduced thermoelectric and transport currents in GaAs nanowires
12 (2012)
L. Prechtel, M. Padilla, N. Erhard, H. Karl, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner
Online Ref
Direct observation of metastable hot trions in an individual quantum dot
Phys. Rev. B 84, 235321 (2011)
V. Jovanov, S. Kapfinger, M. Bichler, G. Abstreiter, J. Finley
Online Ref
A Pore-Cavity-Pore Device to Trap and Investigate Single Nanoparticles and DNA Molecules in a Femtoliter Compartment: Confined Diffusion and Narrow Escape
Nano Letters 11 (2011)
D. Pedone, M. Langecker, G. Abstreiter, U. Rant
Online Ref
Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
Appl. Phys. Lett., 123114 (2011)
S. Hertenberger, D. Rudolph, S. Bolte, M. Döblinger, M. Bichler, D. Spirkoska, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Coherent control of electrical currents in semiconductor nanowires/-tubes
8 (2011)
M. Betz, C. Ruppert, S. Thunich, R. Newson, J. M. Menard, C. Sames, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner, H. M. van Driel
Online Ref
Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities
Physical Review B 84, 85320 (2011)
N. Hauke, S. Lichtmannecker, T. Zabel, F. Laussy, A. Laucht, M. Kaniber, D. Bougeard, G. Abstreiter, J. Finley, Y. Arakawa
Online Ref
Crystal Structure Transfer in Core/Shell Nanowires
Nano Lett. 11, 1690-1694 (2011)
R. E. Algra, M. Hocevar, M. A. Verheijen, I. Zardo, G. G. W. Immink, W. J. P. van Enckevort, G. Abstreiter, L. P. Kouwenhoven, E. Vlieg, E. P. A. M. Bakkers
Online Ref
Direct observation of a non-catalytic growth regime for GaAs nanowires
Nano Letters, 3848 (2011)
D. Rudolph, S. Hertenberger, S. Bolte, W. Paosangthong, D. Spirkoska, M. Doeblinger, M. Bichler, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
Directional and Dynamic Modulation of the Optical Emission of an Individual GaAs Nanowire Using Surface Acoustic Waves
Nano Letters, 1512 (2011)
J. B. Kinzel, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. Krenner
Online Ref
Excited state quantum couplings and optical switching of an artificial molecule
Phys. Rev. B 84, 81302 (2011)
K. Mueller, G. Reithmaier, E. Clark, V. Jovanov, M. Bichler, H. Krenner, M. Betz, G. Abstreiter, J. Finley
Online Ref
Interplay between electrical transport properties of GeMn thin films and Ge substrates
Phys. Rev. B 83, 125306 (2011)
N. Sircar, S. Ahlers, C. Majer, G. Abstreiter, D. Bougeard
Online Ref
Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots
Phys. Rev. B 83, 161303 (2011)
V. Jovanov, T. Eissfeller, S. Kaphinger, E. C. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, G. Abstreiter, J. J. Finley
Online Ref
Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots
Phys. Rev. B 83, 161303 (2011)
V. Jovanov, T. Eissfeller, S. Kapfinger, E. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, G. Abstreiter, J. Finley
Online Ref
All-optical coherent control of electrical currents in single GaAs nanowires
(2010)
C. Ruppert, S. Thunich, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner, M. Betz
Online Ref
Asymmetric optical nuclear spin pumping in a single uncharged quantum dot
Phys. Rev. B 82, 121307 (2010)
F. Klotz, V. Jovanov, J. Kierig, E. Clark, M. Bichler, G. Abstreiter, H. Schwager, G. Giedke, M. S. Brandt, J. Finley
Online Ref
Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities
New Journal of Physics 12, 53005 (2010)
N. Hauke, T. Zabel, K. Mueller, M. Kaniber, A. Laucht, D. Bougeard, G. Abstreiter, J. Finley, Y. Arakawa
Online Ref
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area molecular beam epitaxy
J. Appl. Phys., 114316 (2010)
S. Hertenberger, D. Rudolph, M. Bichler, J. Finley, G. Abstreiter, G. Koblmueller
Multiple Nanowire Species Synthesized on a Single Chip by Selectively Addressable Horizontal Nanochannels
Nano Letters 10(4), 1341 (2010)
Y. Xiang, K. Andreas, L. Moreno Codinachs, N. Kornelius, G. Abstreiter, A. Fontcuberta i Morral, B. Thomas
Multiplexed Parallel Single Transport Recordings on Nanopore Arrays
10 (2010)
A. Kleefen, D. Pedone, C. Grunwald, R. Wei, M. Firnkes, G. Abstreiter, U. Rant, R. Tampé
Online Ref
Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dot
, 96 (2010)
F. Klotz, V. Jovanov, J. Kierig, E. Clark, D. Rudolph, D. Heiss, M. Bichler, G. Abstreiter, M. S. Brandt, J. Finley
Online Ref
Optically monitoring electron spin relaxation in a single quantum dot using a spin memory device
Phys. Rev. B 82, 245316 (2010)
D. Heiss, V. Jovanov, F. Klotz, D. Rudolph, M. Bichler, G. Abstreiter, M. S. Brandt, J. Finley
Online Ref
Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond
97 (2010)
M. Stallhofer, M. Seifert, M. Hauf, G. Abstreiter, M. Stutzmann, J. A. Garrido, A. Holleitner
Online Ref
Quantum interference control of femtosecond, µA current bursts in single GaAs nanowires
Nano Lett. 10 (2010)
C. Ruppert, S. Thunich, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner, M. Betz
Online Ref
Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures’
Nanotechnology 20, 075603 (2009) (2009)
M. Heiß, A. Gustafsson, S. Conesa-Boj, F. Peiro, J. R. Morante, G. Abstreiter, J. Arbiol, L. Samuelson, A. Fontcuberta i Morral
GaAs nanowires and related prismatic heterostructures
Semiconductor Science and Technology, 24, 113001 (2009)
D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Ge1-x Mnx Clusters: Central Structural and Magnetic Building Blocks of Nanoscale Wire-Like Self-Assembly in a Magnetic Semiconductor
Nano Letters 9 (11) (2009)
D. Bougeard, N. Sircar, S. Ahlers, V. Lang, G. Abstreiter, A. Trampert, J. M. LeBeau, S. Stemmer, D. W. Saxey, A. Cerezo
Online Ref
Investigation of a contacting scheme for self-assembled cleaved edge overgrown InAs nanowires and quantum dot arrays
206, 1620 (2009)
M. Fehr, E. Uccelli, S. Dasgupta, M. Bichler, L. Steinke, G. Abstreiter, M. Grayson, A. Fontcuberta i Morral
Long Range Epitaxial Growth of Prismatic Heterostructures on the facets of Catalyst-Free GaAs Nanowires
J. Mater. Chemistry 19, 840 (2009)
M. Heigoldt, J. Arbiol, D. Spirkoska, J. M. Rebled, S. Conesa-Boj, G. Abstreiter, F. Peiró, J. R. Morante, A. Fontcuberta i Morral
Outcoupling of Light Generated in a Monolithic Silicon Photonic Crystal Nanocavity through a Lateral Waveguide
Jpn. J. Appl. Phys 48 (2009)
D. Dorfner, S. Iwamoto, M. Nomura, S. Nakayama, J. Finley, G. Abstreiter, Y. Arakawa
Online Ref
Photocurrent and photoconductance properties of a GaAs nanowire
Applied Physics Letters 95, 83111 (2009)
S. Thunich, L. Prechtel, D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner
Online Ref
Photonic Crystal Nanostructures for Optical Biosensing Applications
24 (2009)
D. Dorfner, T. Zabel, T. Hürlimann, N. Hauke, L. Frandsen, U. Rant, G. Abstreiter, J. Finley
Online Ref
Planar Nanogap Electrodes by Direct Nanotransfer Printing
SMALL 5, 579 (2009)
S. Strobel, S. Harrer, G. Scarpa, G. Abstreiter, P. Lugli, M. Tornow
Online Ref
PNA-PEG Modified Silicon Platforms as Functional Bio-Interfaces for Applications in DNA Microarrays and Biosensors
Biomacromolecules 10, 489-496 (2009)
A. Cattani-Scholz, D. Pedone, F. Blobner, G. Abstreiter, J. Schwartz, M. Tornow, L. Andruzzi
Online Ref
Raman Spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects
Physical Review B 80, 245324 (2009)
I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Selective optical charge generation, storage, and readout in a single self-assembled quantum dot
Appl. Phys. Lett. 94, 72108 (2009)
D. Heiss, V. Jovanov, M. Caesar, M. Bichler, G. Abstreiter, J. Finley
Online Ref
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
Physical Review B 80, 245325 (2009)
D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Roessler, F. Peiro, J. R. Morante, G. Abstreiter, L. Samuelson, A. Fontcuberta i Morral
Online Ref
Charge and spin readout scheme for single self-assembled quantum dots
Phys. Rev. B 77, 235442 (2008)
D. Heiss, V. Jovanov, M. Bichler, G. Abstreiter, J. Finley
Online Ref
Controlled synthesis of InAs wires, dot and twin-dot array configurations by Cleaved Edge Overgrowth
19 (2008)
E. Uccelli, M. Bichler, S. Nürnberger, G. Abstreiter, A. Fontcuberta i Morral
Erratum: “Nucleation mechanism of gallium-assisted Molecular Beam Epitaxy growth of Gallium Arsenide nanowires”
Appl. Phys. Lett. 92, 63112 (2008)
A. Fontcuberta i Morral, K. Maslov, C. Colombo, G. Abstreiter, J. Arbiol, J. R. Morante
Online Ref
Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
Phys. Rev. B 77, 155326 (2008)
C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy
J. Cryst. Growth, 310, 1049 (2008)
M. Heiß, E. Riedelberg, D. Spirkoska, M. Bichler, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Growth mechanisms of self assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets
Superlattices and Microstructures 44, 425 (2008)
E. Uccelli, S. Nürnberger, M. Bichler, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Microstructured horizontal alumina pore arrays as growth templates for large area few and single nanowire devices
phys.stat.sol. (RRL) 2, 59 (2008)
Y. Xiang, W. Lee, K. Nielsch, G. Abstreiter, A. Fontcuberta i Morral
Organophosphonate-Based PNA-Functionalization of Silicon Nanowires for Label-Free DNA Detection
ACSNano 2, 1653-1660 (2008)
A. Cattani-Scholz, D. Pedone, M. Dubey, S. Neppl, B. Nickel, P. Feulner, J. Schwartz, G. Abstreiter, M. Tornow
Online Ref
Room Temperature Nanoimprint Lithography Using Molds Fabricated by Molecular Beam Epitaxy
7, 363 (2008)
S. Harrer, S. Strobel, G. Scarpa, G. Abstreiter, M. Tornow, P. Lugli
Online Ref
Self-assembly of InAs quantum dot structures on cleaved facets
(2008)
E. Uccelli, J. Bauer, M. Bichler, D. Schuh, J. Finley, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Silicon Photonic Crystal Nanostructures for Refractive Index Sensing
Appl. Phys. Lett. 93, 181103 (2008)
D. Dorfner, T. Hürlimann, T. Zabel, G. Abstreiter, L. H. Frandsen, J. Finley
Online Ref
Silicon-on-insulator based nanopore cavity arrays for lipid membrane investigation
Nanotechnology 19 (2008)
K. Buchholz, A. Tinazli, A. Kleefen, D. Dorfner, D. Pedone, U. Rant, R. Tampe, G. Abstreiter, M. Tornow
Online Ref
Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass
Applied Physics Letters 93, 132102 (2008)
S. Dasgupta, S. Birner, C. Knaak, M. Bichler, A. Fontcuberta i Morral, G. Abstreiter, M. Grayson
Online Ref
Size and environment dependence of surface phonon modes of gallium arsenide nanowires as measured by Raman spectroscopy
Nanotechnology 19, 435704 (2008)
D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral
The use of molecular beam epitaxy for the synthesis of high purity III–V nanowires
J. Phys.: Condens. Matter 20, 454225 (2008)
D. Spirkoska, C. Colombo, M. Heiß, G. Abstreiter, A. Fontcuberta i Morral
Online Ref
Transmission of light generated in a Silicon Photonic Crystal Nanocavity through a Lateral Waveguide
No Reference given. (2008)
D. Dorfner, S. Iwamoto, M. Nomura, S. Nakayama, J. Finley, G. Abstreiter, Y. Arakawa
Controlling the surface density of DNA on gold by electrically induced desorption
Biosensors and Bioelectronics 23, 326-331 (2007)
K. Arinaga, U. Rant, J. Knezevic, E. Pringsheim, M. Tornow, S. Fujita, G. Abstreiter, N. Yokoyama
Guided self assembly of InAs quantum dots on a cleaved facet
Mater. Res. Soc. Symp. Proc. 959 M-16-02 (2007)
E. Uccelli, D. Schuh, J. Bauer, M. Bichler, J. Finley, M. Grayson, G. Abstreiter, A. Fontcuberta i Morral
Novel one-dimensional states in a bent quantum hall junction
Intern. Journal of Modern Physics B 21, 1207-1208 (2007)
M. Grayson, L. Steinke, M. Huber, D. Schuh, M. Bichler, G. Abstreiter, L. Hoeppel, J. Smet, K. V. Klitzing, D. K. Maude
Observation of extremely slow hole spin relaxation in self-assembled quantum dots
Phys. Rev. B 76, 241306 (2007)
D. Heiss, S. Schaeck, H. Huebl, M. Bichler, G. Abstreiter, J. J. Finley, D. V. Bulaev, D. Loss
Optical characterization of silicon on insulator photonic crystal nanocavities infiltrated with colloidal PbS quantum dots
Appl. Phys. Lett. 91, 233111 (2007)
D. F. Dorfner, T. Hürlimann, G. Abstreiter, J. J. Finley
pH Sensitivity of Gallium Arsenide (GaAs) Electrodes Functionalized with Methy-Mercaptobiphenyl Monolayers
J. Phys. Chem. C. 111, 12414-12419 (2007)
D. Gassull, S. M. Luber, A. Ulman, M. Grunze, M. Tornow, G. Abstreiter, M. Tanaka
Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule
Phys. Rev. B 74, 121305 (2006)
T. Nakaoka, E. C. Clark, H. J. Krenner, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, J. J. Finley
Electrical Manipulation of Oligonucleotides Grafted to Charged Surfaces
Organic and Biomolecular Chemistry 4, 3448-4355 (2006)
U. Rant, K. Arinaga, S. Fujita, N. Yokoyama, G. Abstreiter, M. Tornow
Ferromagnetic Ge(Mn) nanostructures
Physica E 32, 422-425 (2006)
S. Ahlers, D. Bougeard, H. Riedl, G. Abstreiter, A. Trampert, W. Kipferl, M. Sperl, A. Bergmaier, G. Dollinger
Optically Probing Spin and Charge Interactions in a Tunable Artificial Molecule
Phys. Rev. Lett. 97, 76403 (2006)
H. J. Krenner, E. C. Clark, T. Nakaoka, M. Bichler, C. Scheurer, G. Abstreiter, J. J. Finley
The role of surface-charging during the co-adsorption of mercaptohexanol to DNA-layers on gold: direct observation of desorption and layer re-orientation
Langmuir 22, 5560-5562 (2006)
K. Arinaga, U. Rant, M. Tornow, S. Fujita, G. Abstreiter, N. Yokoyama
Aluminium arsenide cleaved-edge overgrown quantum wires
Appl. Phys. Lett. 87, 52101 (2005)
J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini
Aluminum arsenide cleaved-edge overgrown quantum wires
Appl. Phys. Lett. 87, 52101 (2005)
J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini
Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy
Journal of Appl. Phys. 98, 113517 (2005)
P. H. Tan, D. Bougeard, G. Abstreiter, K. Brunner
Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
Phys. Rev. Lett. 94, 57402 (2005)
H. J. Krenner, M. Sabathil, E. C. Clark, A. Kress, D. Schuh, M. Bichler, G. Abstreiter, J. J. Finley
Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer
12 (2005)
O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S. K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert
Investigation of cavity modes and direct observation of Purcell enhancement in 2D photonic crystal defect microcavities
Physica E 26, 351-355 (2005)
A. Kress, F. Hofbauer, N. Reinelt, H. J. Krenner, M. Bichler, D. Schuh, R. Meyer, G. Abstreiter, J. J. Finley
Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
Appl. Phys. Lett. 86, 192106 (2005)
F. Fischer, D. Schuh, M. Bichler, G. Abstreiter, M. Grayson, K. Neumaier
Negative differential conductance in cleaved edge overgrown surface superlattices
in: proc. of 27th International Conference on the Physics of Semiconductors 772, 900-901 (2005)
T. Feil, H. P. Tranitz, M. Reinwald, W. Wegscheider, M. Bichler, D. Schuh, G. Abstreiter, S. J. Allen
Raman scattering of folded acoustic phonons in self – assembled Si/Ge dot superlattices
Chinese Journal of light scattering 17, 312-314 (2005)
P. H. Tan, D. Bougeard, G. Abstreiter, K. Brunner
Recent advances in exciton-based quantum information processing in quantum dot nanostructures
New Journal of Physics 7, 184 (2005)
H. J. Krenner, S. Stufler, M. Sabathil, E. C. Clark, P. Ester, M. Bichler, G. Abstreiter, J. J. Finley, A. Zrenner
Recent advances in exciton-based quantum information processing in quantum dot nanostructures
New Journal of Physics 7, 184 (2005)
H. J. Krenner, S. Stufler, M. Sabathil, E. C. Clark, P. Ester, M. Bichler, G. Abstreiter, J. J. Finley, A. Zrenner
Silicon-on-insulator based thin-film resistor for chemical and biological sensor applications
Chem. Phys. Chem. 4, 1104-1106 (2005)
M. G. Nikolaides, S. Rauschenbach, S. Luber, K. Buchholz, M. Tornow, G. Abstreiter, A. R. Bausch
Anomalous-filling-factor-dependent nuclear-spin polarization in a 2D electron system
Phys. Rev. Lett. 92, 86802 (2004)
J. M. Smet, R. A. Deutschmann, F. Ertl, W. Wegscheider, G. Abstreiter, K. V. Klitzing
Dynamic electrical switching of DNA layers on a metal surface
Nano Lett. 4, 2441-2445 (2004)
U. Rant, K. Arinaga, S. Fujita, N. Yokoyama, G. Abstreiter, M. Tornow
Fabrication of double quantum dots by combining afm and e-beam lithography
Physica E 21, 483-486 (2004)
M. C. Rogge, C. Fühner, U. F. Keyser, M. Bichler, G. Abstreiter, W. Wegscheider, R. J. Haug
Localization of fractionally charged quasi-particles
Science 305, 980-983 (2004)
J. Martin, S. Ilani, B. Verdene, J. Smet, V. Umansky, D. Mahalu, D. Schuh, G. Abstreiter, A. Yacoby
Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers
Semicond. Sci. Technol. 19, S342-S344 (2004)
G. Scarpa, P. Lugli, N. Ulbrich, G. Abstreiter, M. C. Amann, M. Manenti, F. Compagnone, A. D. Carlo
Observation of electrostatically released DNA from gold electrodes with controlled threshold voltages
J. Chem. Phys. 120, 5501-5504 (2004)
S. Takeishi, U. Rant, T. Fujiwara, K. Buchholz, T. Usuki, K. Arinaga, K. Takemoto, Y. Yamaguchi, M. Tornow, S. Fujita, G. Abstreiter, N. Yokoyama
Optically programmable electron spin memory using semiconductor quantum dots
Nature 432, 81-84 (2004)
M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley
Photoluminescence of one-dimensional electron gases in cleaved-edge overgrowth quantum wires
phys. stat. sol. (b) 241, No. 5, 1041-1045 (2004)
C. Kristukat, A. R. Goni, M. Bichler, W. Wegscheider, G. Abstreiter, C. Thomsen
Quantum Hall effect in a two-dimensional electron system bent by 90º
Physica E 22, 181-184 (2004)
M. Grayson, D. Schuh, M. Bichler, M. Huber, G. Abstreiter, L. Hoeppel, J. Smet, K. V. Klitzing
Quantum-confined Stark shifts of charged exciton complexes in quantum dots
Phys. Rev. B 70, 201308 (2004)
J. J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A. I. Tartakovskii, D. J. Mowbray, S. Skolnick, S. L. Liew, A. G. Cullis, M. Hopkinson
Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices
Appl. Phys. Lett. 84, 2632-2634 (2004)
P. H. Tan, D. Bougeard, G. Abstreiter, K. Brunner
Redistribution dynamics of optically generated charges in In(Ga)As/GaAs self-assembled quantum dots
Appl. Phys. Lett. 85, 2592-2594 (2004)
Y. Ducommun, M. Kroutvar, M. Reimer, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley
Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
Physica E 21, 312-316 (2004)
D. Bougeard, P. H. Tan, M. Sabathil, P. Vogl, G. Abstreiter, K. Brunner
Structural properties of oligonucleotide monolayers on gold surfaces probed by fluorescence investigations
Langmuir 20, 10086-10092 (2004)
U. Rant, K. Arinaga, S. Fujita, N. Yokoyama, G. Abstreiter, M. Tornow
Transport in weakly and strongly modulated two-dimensional electron systems realized by cleaved-edge-overgrowth
phys. stat. sol. 1, 2111 (2004)
T. Feil, R. A. Deutschmann, W. Wegscheider, M. Rother, D. Schuh, M. Bichler, G. Abstreiter, B. Rieder, J. Keller
Anisotropic high-mobility quantum Hall transport: two-dimensional electrons subject to few millikelvins and misoriented substrates
in: Physics of Semiconductors 2002, Institute of Physics Conference Series 171, eds.: A. R. Long, and J. H. Davies, Institute of Physics Publishing Bristol, E2.2 (2003)
F. Ertl, O. Jaeger, R. A. Deutschmann, M. Bichler, G. Abstreiter, E. Schuberth, C. Probst, W. Wegscheider
Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots
Appl. Phys. Lett. 83, 1163-1165 (2003)
M. C. Rogge, C. Fühner, U. F. Keyser, R. J. Haug, M. Bichler, G. Abstreiter, W. Wegscheider
Electrically tunable mid-infrared electroluminescence from graded cascade structures
Appl. Phys. Lett. 83, 3015-3017 (2003)
Y. B. Vasilyev, V. A. Solov`ev, B. Y. Meltser, A. N. Semenov, S. V. Ivanov, P. S. Kop`ev, N. Ulbrich, G. Abstreiter, M. C. Amann, S. Schmult, W. Wegscheider
Femtosecond buildup of screening and collective effects in photoexcited GaAs: How bare charges get dressed
in: Physics of Semiconductors 2002, Institute of Physics Conference Series 171, eds.: A.R. Long and J. H. Davies, Institute of Physics Publishing Bristio and Philadelphia, 93-100 (2003)
F. Tauser, R. Huber, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer
Kondo effect in a few-electron quantum ring
Phys. Rev. Lett. 90, 196601-1 (2003)
U. F. Keyser, C. Fühner, S. Borck, R. J. Haug, M. Bichler, G. Abstreiter, W. Wegscheider
Local structure of Ge/Si nanostructures: uniqueness of XAFS spectroscopy
Nuclear Instruments and Methods, 199, 174-178 (2003)
A. V. Kolobov, H. Oyanagi, A. Frenkel, I. Robinson, J. Cross, S. Wei, G. Abstreiter, Y. Maeda, A. Shklyaev, M. Ichikawa, S. Yamasaki, K. Tanaka
Low-loss GaInAs-based waveguides for high-performance 5.5 mu m InP-based quantum cascade lasers
IEE Proceedings-Optoelectronics 150, 284-287 (2003)
G. Scarpa, N. Ulbrich, G. Böhm, G. Abstreiter, M. C. Amann
Mid-infrared electroluminescence from device with changeable electron-hole distance
Electronics Lett. 39, 108-110 (2003)
Y. B. Vasilyev, V. A. Solov`ev, B. Y. Meltser, A. N. Semenov, S. V. Ivanov, P. S. Kop`ev, N. Ulbrich, G. Abstreiter, M. C. Amann
Midinfrared intraband electroluminescence from AllnAs quantum dots
Appl. Phys. Lett. 83, 1530-1532 (2003)
N. Ulbrich, J. Bauer, G. Scarpa, R. Boy, D. Schuh, G. Abstreiter, S. Schmult, W. Wegscheider
Momentum resolved tunnel spectroscopy of integer quantum Hall edges: A tool for measuring
ICPS-26 Proceedings, Institute of Physics Conference Series Number 171, M2.3 (2003)
M. Grayson, M. Rother, W. Biberacher, W. Wegscheider, M. Bichler and G. Abstreiter
Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures
Appl. Phys. Lett. 83, 5371-5373 (2003)
I. Bormann, K. Brunner, S. Hackenbuchner, G. Abstreiter, S. Schmult, W. Wegscheider
Prospects of quantum cascade lasers with GaInAs Waveguides
Adv. in Solid State Phys. 43, 301-312 (2003)
N. Ulbrich, G. Scarpa, G. Abstreiter, M. C. Amann
Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
Superlattices and Microstructures 33, 271-278 (2003)
V. T. Dolgopolov, E. V. Deviatov, A. A. Shashkin, U. Wieser, U. Kunze, G. Abstreiter, K. Brunner
Ultrafast formation of many-particle interactions in a photoexcited electron-hole plasma
Proceedings of SPIE 4992, 130-137 (2003)
R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer
Wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots
Appl. Phys. Lett. 83, 443-445 (2003)
M. Kroutvar, Y. Ducommun, J. J. Finley, M. Bichler, G. Abstreiter, A. Zrenner
Aharonov-Bohm oscillations of a tuneable quantum ring
Sem. Science and Technology 17, L22-L24 (2002)
U. F. Keyser, S. Borck, R. J. Haug, M. Bichler, G. Abstreiter, W. Wegscheider
Effect of the interface on the local structure of Ge-Si nanostructures
J. Vac. Sci. Technol. A 20, 1116-1119 (2002)
A. V. Kolobov, H. Oyanagi, K. Brunner, G. Abstreiter, Y. Maeda, A. A. Shklyaev, S. Yamasaki, M. Ichikawa, K. Tanaka
Efficient light emission at 1.54 µm from Er in Si excited by hot electron injection through thin suboxide layers
J. of Appl. Phys. 91, 9764-9771 (2002)
M. Markmann, A. Sticht, F. Bobe, G. Zandler, K. Brunner, G. Abstreiter, E. Müller
Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density
Phys. Chem. Chem. Physics 4, 785-790 (2002)
K. Adlkofer, E. Duijs, F. Findeis, A. Zrenner, E. Sackmann, G. Abstreiter, M. Tanaka
Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor
Nature 415, 281-286 (2002)
J. H. Smet, R. A. Deutschmann, F. Ertl, W. Wegscheider, G. Abstreiter, K. V. Klitzing
High-performance 5.5µm quantum cascade lasers with high-reflection coating
IEE Proc.-Optoelectron. 149, 201-205 (2002)
G. Scarpa, N. Ulbrich, J. Roßkopf, G. Böhm, G. Abstreiter, M. C. Amann
Intersubband staircase laser
Appl. Phys. Lett. 80, 4312-4314 (2002)
N. Ulbrich, G. Scarpa, G. Böhm, G. Abstreiter, M. C. Amann
Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures
Applied Physics Letters 80 (2002)
I. Bormann, K. Brunner, S. Hackenbuchner, G. Zandler, G. Abstreiter, S. S. Wegscheider
Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces
Phys. Rev. B 65, 85314 (2002)
M. Betz, G. Göger, A. Leitenstorfer, M. Bichler, G. Abstreiter, W. Wegscheider
Optically detected single-electron charging in a quantum dot
Physica E 13, 95-100 (2002)
A. Zrenner, F. Findeis, M. Baier, M. Bichler, G. Abstreiter, U. Hohenester, E. Molinari
Silicon/silicon suboxide heterostructures grown by molecular beam epitaxy
Materials Science and Engineering B 89, 274-278 (2002)
A. Sticht, M. Markmann, K. Brunner, G. Abstreiter, E. Müller
Structural and optical properties of vertically correlated Ge island layers grown at low temperatures
Materials Science and Engineering B 89, 54-57 (2002)
M. Herbst, C. Schramm, K. Brunner, T. Asperger, H. Riedl, G. Abstreiter, A. Vörckel, H. Kurz, E. Müller
Femtosecond buildup of Coulomb screening in photoexcited GaAs probed via ultrabroadband THz spectroscopy
Journal of Luminescence 94-95, 555-558 (2001)
R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer
High-temperature (T> 470 K) pulsed operation of 5.5µm quantum cascade lasers with high-reflection coating
Electronics Letters 37, 1341-1342 (2001)
N. Ulbrich, G. Scarpa, A. Sigl, J. Roßkopf, G. Böhm, G. Abstreiter, M. C. Amann
How many-particle interactions develop after ultfrafast excitation of an electron-hole plasma
Nature 414, 286-289 (2001)
R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer
Influence of thiol coupling on photoluminescence of near surface InAs quantum dots
phys. stat. sol. (b) 224, 871-875 (2001)
E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, E. Sackmann
Ising feromagnetism and domain morphology in the fractional quantum hall regime
Phys. Rev. Lett. 86, 2412-2415 (2001)
J. H. Smet, R. A. Deutschmann, W. Wegscheider, G. Abstreiter, K. V. Klitzing
Local structure of Ge/Si (100) self-assembled quantum dots
Journal of China University of Science and Technology 31, 282-288 (2001)
A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, K. Tanaka
Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots
Appl. Phys. Lett. 78, 451-453 (2001)
A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, K. Tanaka
Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots studied by fluorescent X-ray absorption fine structure
Proc. of the 6th International Symposium on Advanced Physical Fields: Growth of Well-defined Nanostructures (2001)
A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, K. Tanaka
Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs
Physica E 10, 57-61 (2001)
R. Meisels, K. Dybko, F. Ziouzia, F. Kuchar, R. Deutschmann, G. Abstreiter, G. Hein, K. Pierz
Self-Ordering of Ge islands on Si substrates mediated by local strain fields
phys. stat. sol. (b) 224, 531-535 (2001)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst
Electronic inelastic light scattering in a periodic ?-doping GaAs multiple quantum well structure
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
C. Kristukat, A. R. Goni, S. Rutzinger, W. Wegscheider, G. Abstreiter, C. Thomsen
Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers
Jpn. J. Appl. Phys. 39, 1727-1729 (2000)
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M. C. Amann
Low-resistance InGa(Al)As tunnel junctions for long-wavelength vertical-cavity surface-emitting lasers
IEEE Photonics Technology Letters 39, 1727 (2000)
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M. C. Amann
Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE
Thin solid films 369, 398-401 (2000)
M. Markmann, E. Neufeld, K. Brunner, G. Abstreiter, C. Buchal
Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates
Physica E 7, 881-886 (2000)
K. Brunner, J. Zhu, C. Miesner, G. Abstreiter, O. Kienzle, F. Ernst
Semiclassical origin of the 2D metallic state in high mobility Si-MOS and Si/SiGe structures
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
G. Brunthaler, A. Prinz, G. Pillwein, G. Bauer, K. Brunner, G. Abstreiter, T. Dietl, V. M. Pudalov
Step bunching and correlated SiGe nanostructures on (113) Si
Thin Solid Films 369, 39-42 (2000)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst
Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices
J. Vac. Sci. Technol. B 18, 2187 (2000)
J. Stangl, T. Roch, V. Holý, M. Pinczolits, G. Springholz, G. Bauer, I. Kegel, T. H. Metzger, J. Zhu, K. Brunner, G. Abstreiter, D. Smilgies
Characteristics of surface and waveguide emitting SiGe:Er:O diodes
Journal of Luminescence 80, 321-327 (1999)
A. Sticht, E. Neufeld, A. Luigart, K. Brunner, G. Abstreiter, H. Bay
Correlated SiGe wires shaped by regular step bunches on miscut Si (113) substrates
Phys. Rev. B 60, 10935 (1999)
J. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst, M. Rühle
Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures
Phys. Rev. B 59, 13242-13250 (1999)
C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. Schäffler
Mechanical nanomanipulation of single strain-induced semiconductor quantum dots
Appl. Phys. Lett. 75, 358-360 (1999)
C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto
Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Appl. Phys. Lett. 74, 3200-3202 (1999)
C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto
Regular step bunching and ordering of Ge Islands on vicinal Si surfaces
Proc. of ICPS 24, Ed. D. Gershoni World Scientific, p. 61 ff (1999)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst
Spatially resolved spectroscopy of single and coupled quantum dots
Jpn. J. Appl. Phys. 38, 449-454 (1999)
G. Abstreiter, M. Bichler, M. Markmann, G. Schedelbeck, W. Wegscheider, A. Zrenner
Chemical beam epitaxy of integrated 1.55 µm lasers on exact and misoriented (1 0 0)-InP substrates
Journal of Crystal Growth 188, 275-280 (1998)
A. Nutsch, N. Döhr, H. Kratzer, R. Lukas, B. Torabi, G. Tränkle, G. Abstreiter, G. Weimann
Growth and characterization of strained Si1-xGex multi-quantum-well waveguide photodetectors on (1 1 0) Si for 1.3 and 1.55 µm
Physica E 2, 753-757 (1998)
K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele
Highly regular self-organization of step bunches during growth of SiGe on Si (113)
Appl. Phys. Lett. Vol 73 (1998)
A. A. Darhuber, J. Zhu, V. Holy, J. Stangl, P. Mikulik, K. Brunner, G. Abstreiter, G. Bauer
Lateral ordering of self-assembled Ge islands
Thin Solid Films 336, 252-255 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst
Luminescence from erbium- and oxygen-doped SiGe grown by molecular beam epitaxy
Thin Solid Films 321, 219-222 (1998)
E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter, H. Bay, C. Buchal, H. Holzbrecher
Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates
Thin Solid Films 321, 245-250 (1998)
K. Brunner, H. Dobler, G. Abstreiter, H. Schäfer, B. Lustig
Raman scattering in annealed isotopic (70Ge)n(74Ge)m superlattices
Physica E 2 291-294 (1998)
E. Silveira, W. Dondl, G. Abstreiter, E. E. Haller
Self-Assembled Ge-Dots: Growth, Characterization, Ordering and Applications
J. Vac.Sci. Technol. B 16 (1998)
P. Schittenhelm, C. Engel, F. Findeis, G. Abstreiter, A. A. Darhuber, A. O. Kosogov, P. Werner
Size distribution of coherently strained InAs quantum dots
J. Appl. Phys. 84, 4268-4272 (1998)
K. H. Schmidt, G. Medeiros-Ribeiro, U. Kunze, G. Abstreiter, M. Petroff
Spatially resolved optical spectroscopy on natural quantum dots
Applied Surface Science 123/124, 356-365 (1998)
A. Zrenner, A. Schaller, M. Markmann, M. Hagn, M. Arzberger, D. Henry, G. Abstreiter, G. Böhm, G. Weimann
Spectroscopy of excitonic Zeeman levels in single quantum dots
Physica E 2, 609-613 (1998)
A. Schaller, A. Zrenner, G. Abstreiter, G. Böhm
Spin splitting in GaAs quantum wire structures
PHYSICA E 2 1-4 929-932 (1998)
E. Silveira, M. K. Kelly, C. E. Nebel, G. Bohm, G. Abstreiter, M. Stutzmann
Structural characterization of self-assembled Ge dot multilayers by x-ray diffraction and reflectivity methods
Physica E, 2. 789-793 (1998)
A. A. Darhuber, V. Holy, P. Schittenhelm, J. Stangl, I. Kegel, Z. Kovats, T. H. Metzger, G. Bauer, G. Abstreiter, G. Grübel
Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth
Phys. Rev. Letters 79 (10), 1917-1920 (1997)
W. Wegscheider, G. Schedelbeck, G. Abstreiter, M. Rother, M. Bichler
Defect-free strain relaxation in locally MBE-grown SiGe-heterostructures
Thin Solid Films 294, 27-32 (1997)
T. Rupp, F. Kaesen, W. Hansch, E. Hammerl, D. J. Gravesteijn, R. Schorer, E. Silveira, G. Abstreiter, I. Eisele
Direct and indirect magnetoexcitons in InGaAs/GaAs coupled quantum wells: experiment and theory
12th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany, July 28-Aug.2, 1996. Vol 2, 689-692 (1997)
L. V. Butov, A. B. Dzyubenko, A. L. Yablonskii, A. Zrenner, G. Abstreiter, A. V. Petinova, K. Eberl
Erbium-silicon light emitting diodes grown by molecular beam epitaxy: optical properties
Thin Solid Films 294, 220-222 (1997)
J. Stimmer, A. Reittinger, E. Neufeld, G. Abstreiter, H. Holzbrecher, U. Breuer, C. Buchal
Ge self-diffusion in isotopic (70Ge)n(74Ge)m superlattices: A Raman study
Phys. Rev. B 56 (4), 2062-2069 (1997)
E. Silveira, W. Dondl, G. Abstreiter, E. E. Haller
Growth of self-assembled homogeneous SiGe dots on Si(100)
Thin Solid Films 294, 291-295 (1997)
P. Schittenhelm, G. Abstreiter, A. Darhuber, G. Bauer, P. Werner, A. Kosogov
Anomalous Transport of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
Surface Science 361/362, 243-246 (1996)
L. V. Butov, A. Zrenner, M. Hagn, G. Abstreiter, G. Böhm, G. Weimann
Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells
Phys. Rev. B 54 (3), 1922-1927 (1996)
J. Olajos, J. Engwall, H. G. Grimmeiss, M. Gail, G. Abstreiter, H. Presting, H. Kibbel
Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy
Appl. Phys. Lett. 68 (23), 3290-3292 (1996)
J. Stimmer, A. Reittinger, J. Nuetzel, G. Abstreiter, H. Holzbrecher, C. Buchal
Electronic excitations in quantum wires and dots
Physica B 227, 10-Jun (1996)
G. Abstreiter, R. Strenz, G. Schedelbeck, E. Silveira
Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing
Appl. Phys. Lett. 68 (21), 3025-3027 (1996)
M. Holzmann, P. Baumgartner, C. Engel, J. Nuetzel, G. Abstreiter, F. Schäffler
Far-infrared-study of shallow etched quantum wires on high mobility GaAs/AlGaAs heterostructures and quantum-wells
Solid-State Electronics 40 (1-8) (1996)
V. Roßkopf, P. Auer, E. Gornik, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann
Growth and characterization of self-assembled Ge-rich islands on Si
Semicond. Sci. Technol. 11, 1521-1528 (1996)
G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, W. Jäger
Growth conditions of Erbium-Oxygen-doped Silicon grown by MBE
Mat. Res. Soc. Symp. Proc. Vol. 422 422, 15 (1996)
J. Stimmer, A. Reittinger, G. Abstreiter, H. Holzbrecher, C. Buchal
Linewidth and finestructure of optical spectra from single quantum dots
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 2, 1433-1436, Berlin, Germany, July 21-26 (1996)
A. Zrenner, M. Hagn, A. Schaller, G. Abstreiter, G. Böhm, G. Weimann
Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures
Surface Science 361/362, 673-676 (1996)
M. Holzmann, D. Többen, P. Baumgartner, G. Abstreiter, A. Kriele, H. Lorenz, F. Schäffler
Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 405-408 (1996)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Resonant inelastic light scattering by electronic excitations in tunable quantum wire structures
Surface Science 361/362, 783-787 (1996)
G. Schedelbeck, E. Silveira, R. Strenz, U. Bockelmann, G. Abstreiter, G. Böhm, G. Weimann
Room temperature electroluminescence of Erbium-Oxygen-doped Silicon diodes grown by molecular beam epitaxy
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 4, 3945-3048, Berlin, Germany, July 21-26 (1996)
J. Stimmer, A. Reittinger, C. Wetterer, A. Zrenner, G. Abstreiter, H. Holzbrecher, C. Buchal
Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE
Applied Surface Science 102, 327-330 (1996)
M. Jaumann, J. Stimmer, P. Schittenhelm, J. Nuetzel, G. Abstreiter, E. Neufeld, B. Holländer, C. Buchal
Structure and luminescence of SiGe-Si quantum dots and wires from local epitaxy
Proc. of 11th European Congress on Electron Microscopy (1996)
D. Meertens, W. Jäger, K. Urban, J. Brunner, P. Schittenhelm, G. Abstreiter, J. Gondermann, B. Hadam, H. Kurz, T. S. Rupp, H. Gossner, I. Eisele
Time resolved spectroscopy of single quantum dots: Fermi gas of excitons?
Phys. Rev. Lett. 76 (1996)
U. Bockelmann, P. Roussignol, A. Filoramo, W. Heller, G. Abstreiter, K. Brunner, G. Böhm, G. Weimann
Angular dispersion of confined optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy
Solid State Communications 93 (1995)
M. Zunke, R. Schorer, G. Abstreiter, W. Klein, G. Weimann, M. P. Chamberlain
Antidot superlattices in two-dimensional hole gases confined in strained germanium layers
Semicond. Sci. Technol. 10, 1413-1417 (1995)
D. Többen, M. Holzmann, G. Abstreiter, A. Kriele, H. Lorenz, J. P. Kotthaus, F. Schäffler, Y. H. Xie, P. J. Silvermann, D. Monroe
Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure
Semicond. Sci. Technol. 10, 711-714 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells
Phys. Rev. B 52 (16), 12 153-12 157 (1995)
L. V. Butov, A. Zrenner, G. Abstreiter, A. V. Petinova, K. Eberl
Fabrication and characterization of locally grown SiGe wires and dots
Mat. Sci. and Technol. 11 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele
Fabrication and Characterization of Si/SiGe Nanometer Structures
Microelectronic Engineering 27, 83-86 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele
Fabrication of lateral npn-phototransistors with high gain and sub-µm spatial resolution
Appl. Phys. Lett. 66 (1995)
P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Weimann
Germanium70Ge/74Ge isotope heterostructures: An approach to self-diffusion studies
Phys. Rev. B 51 (1995)
H. D. Fuchs, W. Walukiewicz, E. E. Haller, W. Dondl, R. Schorer, G. Abstreiter, A. I. Rudnev, A. V. Tikhomirov, V. I. Ozhogin
In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation
Appl. Phys. Lett. 67 (11), 1579-1581 (1995)
D. Többen, D. K. D. Vries, A. D. Wieck, M. Holzmann, G. Abstreiter, F. Schäffler
Local epitaxy of Si/SiGe wires and dots
J. of Cryst. Growth 157, 270-275 (1995)
J. Brunner, W. Jung, P. Schittenhelm, M. Gail, G. Abstreiter, J. Gonderman, B. Hadam, T. Koester, B. Spangenberg, H. G. Roskos, H. Kurz, H. Gossner, I. Eisele
Magnetic-Field induced Intersubband Resonances in AlGaAs/GaAs Quantum Wells
Europhysics Letters 30, 111-116 (1995)
C. Gauer, A. Wixforth, J. P. Kotthaus, G. Abstreiter, G. Weimann, W. Schlapp
Nanometer resolved photocurrent and local minority carrier transport in GaAs p-n junctions
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 249 (1995)
G. Zandler, G. Kolb, K. Karrai, G. Abstreiter, P. Vogl
One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures
Appl. Phys. Lett. 66 (1995)
M. Holzmann, D. Többen, G. Abstreiter, M. Wendel, H. Lorenz, J. P. Kotthaus, F. Schäffler
Optical anisotropy of Si/Ge superlattices: Resonant Raman scattering in in-plane geometry
Solid State Communications 93 (1995)
R. Schorer, G. Abstreiter, H. Kibbel, H. Presting, C. Tserbak, G. Theodorou
Optical near-field induced current microscopy
Ultramicroscopy 61, 299-304 (1995)
K. Karraï, G. Kolb, G. Abstreiter, A. Schmeller
Optical study of diffusion limitation in MBE growth of SiGe quantum wells
Semicond. Sci. Technol. 10, 319-325 (1995)
M. Gail, J. Brunner, J. Nuetzel, G. Abstreiter, J. Engvall, J. Olajos, H. Grimmeiss
Optically detected cyclotron resonance on GaAs/AlxGaAs1-x quantum wells and quantum wires
Phys. Rev. B 52 (15), 11 313-11 318 (1995)
D. M. Hofmann, M. Drechsler, C. Wetzel, B. K. Meyer, F. Hirler, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann
Photodetector with subwavelength spatial resolution
Ultramicroscopy 57, 208-211 (1995)
G. Kolb, C. Obermüller, K. Karraï, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Resonant inelastic light scattering by plasmons at the crossover from two- to one-dimensional behavior
Solid State Communications 93 (1995)
G. Schedelbeck, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann
Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy
Journal of Crystal Growth 157, 15-20 (1995)
H. Presting, T. Zinke, O. Brux, G. Abstreiter, H. Kibbel, M. Jaros
Room-temperature photoluminescence of GemSinGem structures
Appl. Phys. Lett. 66 (22), 2978-2980 (1995)
M. Gail, G. Abstreiter, J. Olajos, J. Engvall, H. Grimmeiss, H. Kibbel, H. Presting
SiGe Quantum Wells on (110) Si Grown by Molecular Beam Epitaxy
J. of Crystal Growth 150, 1050-1054 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl
SiGe quantum wells on (110) Si grown molecular beam epitaxy
J. Crystal Growth 150, 1050 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl
Strained Si1-xGex multi-quantum well waveguide structures on (110) Si
Appl. Phys. Lett. 66 (17), 2226-2228 (1995)
K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele
Transport properties of a Si/SiGe quantum point-contact in the presence of impurities
Phys. Rev. B 52 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Angular dispersion of optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 2, 947-954, Vancouver, Canada, August 15-19 (1994)
R. Schorer, M. Zunke, G. Abstreiter, W. Klein, G. Weimann, M. P. Chamberlain
Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
Phys. Rev. Lett. 73 (2), 304-307 (1994)
L. V. Butov, A. Zrenner, G. Abstreiter, G. Böhm, G. Weimann
Confined plasmons in shallow etched quantum wires
Semicond. Sci. Technol. 9, 399-403 (1994)
R. Strenz, V. Roßkopf, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Effects of microwave modulation and cyclotron resonance on the luminescence of GaAs/AlGaAs quantum wells and wires
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 2, 1659-1662, Vancouver, Canada, August 15-19 (1994)
D. M. Hofmann, M. Drechsler, C. Wetzel, P. Emanuelsson, B. K. Meyer, F. Hirler, G. Abstreiter, G. Tränkle, G. Weimann
Electron transport through antidot superlattices in Si/Si0.7Ge0.3 heterostructures
Phys. Rev. B 50 (1994)
D. Többen, M. Holzmann, S. Kühn, H. Lorenz, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Evidence for the exciton condensation in coupled quantum wells at high magnetic fields
Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 328-331 (1994)
L. V. Butov, A. Zrenner, G. Abstreiter, G. Böhm, G. Weimann
Fabrication of in-plane-gate transistor structures by focused-laser-beam-induced Zn-doping of modulation-doped GaAs/AlGaAs quantum wells
Appl. Phys. Lett. 64 (1994)
P. Baumgartner, K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure
J. Appl. Phys. 76 (6), 3917-3919 (1994)
M. Holzmann, D. Többen, G. Abstreiter, F. Schäffler
High Mobility 2D Hole Gases in Strained Ge Channels in Si Substrates Studied by Magnetotransport and Cyclotron Resonance
Solid State Electronics 37, Vol. 37 (1994)
C. M. Engelhardt, D. Többen, M. Aschauer, F. Schäffler, G. Abstreiter, E. Gornik
Information on the confinement potential in GaAs/AlGaAs wires from magneto- luminescence experiments
Surface Science 305, 591-596 (1994)
F. Hirler, R. Strenz, R. Küchler, G. Abstreiter, G. Böhm, G. Weimann
In-plane Raman scattering of (001)-Si/Ge superlattices: Theory and experiment
Phys. Rev. B 49 (1994)
R. Schorer, G. Abstreiter, S. D. Gironcoli, E. Molinari, H. Kibbel, H. Presting
Lateral npn-phototransistors with high gain and high spatial resolution fabricated by focused laser beam induced Zn doping of GaAs/AlGaAs quantum wells
Proc. of the 21st Int. Conf. on Compound Semiconductors, San Diego, USA, September 18 - 22, 1994. Ed.: Herb Goronkin and Umesh Mishra. IOP Publishing Ltd., 1995. 591-596. (1994)
P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Magneto-optics of two-dimensional hole systems in the extreme quantum limit
Phys. Rev. B 49 (19), 14054-14057 (1994)
L. V. Butov, A. Zrenner, M. Shayegan, G. Abstreiter, H. C. Manoharan
Magnetotransport of Electrons in Arrays of Antidots Imposed upon Si/Si0.7Ge0.3 Heterostructures
Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 480-483 (1994)
D. Többen, M. Holzmann, S. Kühn, H. Lorenz, G. Abstreiter, J. P. Kotthaus, F. Schäffler
Nanometer-resolved photocurrent and local minority carrier transport in GaAs P-N junctions
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 1, 249-252, Vancouver, Canada, August 15-19 (1994)
G. Zandler, G. Kolb, K. Karraï, G. Abstreiter, P. Vogl
Photo- and electroluminescence in short-period Si/Ge superlattice structures
Semicond. Sci. Technol. 9, 2011-2016 (1994)
J. Olajos, J. Engvall, H. G. Grimmeiss, U. Menczigar, M. Gail, G. Abstreiter, H. Kibbel, E. Kasper, H. Presting
Photoluminescence and two-photon absorption of the biexciton state in a GaAs/AlGaAs single quantum dot
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 3, 1823-1826, Vancouver, Canada, August 15-19 (1994)
K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Quantum Dots Formed by Interface Fluctuations in AlAs/GaAs Coupled Quantum Well Structures
Phys. Rev. Lett. 72 (21), 3382-3385 (1994)
A. Zrenner, L. V. Butov, M. Hagn, G. Abstreiter, G. Böhm, G. Weimann
Raman Scattering by Optical Phonons in Isotopic 70(Ge)n74(Ge)n Superlattices
Phys. Rev. Lett. 72 (1994)
J. Spitzer, T. Ruf, M. Cardona, W. Dondl, R. Schorer, G. Abstreiter, E. E. Haller
Resonant inelastic light scattering by inter- and intrasubband excitations in shallow etched quantum dots and wires
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 3, 1831-1834, Vancouver, Canada, August 15-19 (1994)
R. Strenz, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Resonant-Raman-scattering study on short-period Si/Ge superlattices
Phys. Rev. B50 (1994)
R. Schorer, G. Abstreiter, H. Kibbel, H. Presting
Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure
Phys. Rev. Lett. 73 (1994)
K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities
Appl. Phys. Lett. 64 (1994)
K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Single-Particle Excitations in Quasi-Zero- and Quasi-One-Dimensional Electron Systems
Phys. Rev. Lett. 73 (1994)
R. Strenz, U. Bockelmann, F. Hirler, G. Abstreiter, G. Böhm, G. Weimann
Vibrational Properties of Isotopic 70Gen74Gen Superlattices
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 2, 971-974, Vancouver, Canada, August 15-19 (1994)
J. Spitzer, T. Ruf, M. Cardona, C. Grein, W. Dondl, R. Schorer, G. Abstreiter, E. E. Haller
Vibrational Properties of Si/Ge Superlattices: Theory and in-plane Raman Scattering Experiments
Solid State Electronics 37, Vol. 37 (1994)
R. Schorer, G. Abstreiter, S. D. Gironcoli, E. Molinari, H. Kibbel, E. Kasper
Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
J. de Physique IV 3, Vol. 3 ,167-170 (1993)
L. V. Butov, A. Zrenner, G. Abstreiter, G. Böhm, G. Weimann
Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)n superlattices
Phys. Rev. B47 (1993)
U. Menczigar, G. Abstreiter, J. Olajos, H. Grimmeiss, H. Kibbel, H. Presting, E. Kasper
Enhanced Band-gap Luminescence in strain-symmetrized (Si)m/(Ge)n Superlattices
Mat. Res. Soc. Symp. Proc. 298, 33-44 (1993)
U. Menczigar, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper
High mobility two-dimensional electron gases in Si/Si1-xGex heterostructures grown by MBE
J. of Crystal Growth 127, 421-424 (1993)
D. Többen, F. Schäffler, M. Besson, C. M. Engelhardt, A. Zrenner, G. Abstreiter, E. Gornik
High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices
Acta Physica Polonica A 84 (1993)
G. Bauer, E. Koppensteiner, P. Hamberger, J. Nuetzel, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper
Micro-Raman scattering in ultrathin layer superlattices: evidence of zone centre anisotropy of optical phonons
Phys. Rev. B47 (1993)
G. Scamarcio, M. Haines, G. Abstreiter, E. Molinari, S. Baroni, A. Fischer, K. Ploog
Photoluminescence from GaAs/AlGaAs quantum wires and quantum dots
J. de Physique IV 3, 107-114 (1993)
K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, G. Weimann
Photoluminescence lineshape of narrow n-type modulation-doped quantum wells
Semicond. Sci. Technol. 8, 88-91 (1993)
R. Küchler, G. Abstreiter, G. Böhm, G. Weimann
Properties of Sn/Ge superlattices
Semicond. Sci. Technol. 8, S6-S8 (1993)
G. Abstreiter, J. Olajos, R. Schorer, P. Vogl, W. Wegscheider
Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots
Semicond. Sci. Technol. 8, 617-621 (1993)
F. Hirler, R. Strenz, R. Küchler, G. Abstreiter, G. Böhm, J. Smoliner, G. Tränkle
Band-gap of strain-symmetrized, short-period Si/Ge superlattices
Phys. Rev. B 46 (1992)
J. Olajos, J. Engvall, H. G. Grimmeiss, U. Menczigar, G. Abstreiter, H. Kibbel, E. Kasper, H. Presting
Douple wavelength selective GaAs/AlGaAs infrared detector device
Appl. Phys. Lett. 60 (1992)
A. Köck, E. Gornik, G. Abstreiter, G. Böhm, M. Walther, G. Weimann
High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
Semicond. Sci. Technol. 7, 260-266 (1992)
F. Schäffler, D. Többen, H. J. Herzog, G. Abstreiter, B. Holländer
Luminescence Properties of GaAs Quantum Wells, Wires, Dots and Antidots
Optical Phenomena in Semiconductor Structures of Reduced Dimensions, Yountville, CA, USA, July 27-31, 1992. Eds.: D. J. Lockwood and A. Pinczuk Kluwer Academic Publishers, Dordrecht 1993. 327-335. (1992)
G. Abstreiter, G. Böhm, K. Brunner, F. Hirler, R. Strenz, G. Weimann
Magneto-Luminescence and Magneto-Luminescence Excitation Spectroscopy in Strained Layer Heterostructures
Solid-State Science 101: High Magnetic Fields in Semiconductor Physics III., Berlin 1992. 514-518 (1992)
R. Küchler, P. Hiergeist, G. Abstreiter, J. P. Reithmaier, H. Riechert, R. Lösch
Observation of Interface Plasmon Modes in (GaAl)As Heterostructures by Raman Spectroscopy
Proc. of 21th Int. Conf. on the Physics of Semiconductors 1, 769-772, Beijing, China, August 10-14 (1992)
M. Haines, T. Egeler, G. Abstreiter, G. Böhm, G. Weimann
Optical characterization of GaAs/AlGaAs nanostructures fabricated by focussed laser beam induced thermal interdiffusion
Surface Science 267, 218-222 (1992)
K. Brunner, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle
Photoluminescence from a Single GaAs/AlGaAs Quantum Dot
Phys. Rev. Lett. 69 (1992)
K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, G. Weimann
Photoluminescence studies of Si/Si1-xGex quantum wells and SimGen superlattices
Thin Solid Films, 222, 227-233 (1992)
U. Menczigar, J. Brunner, E. Friess, M. Gail, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper
Silicon based heterostructures, quantum wells and superlattices
Proc. of 21th Int. Conf. on the Physics of Semiconductors 1, 827-834, Beijing, China, August 10-14 (1992)
G. Abstreiter, J. Brunner, F. Meier, U. Menczigar, J. Nuetzel, R. Schorer, D. Többen
Spatially direct and indirect optical transitions in GaAs/AlGaAs nanostructures of different dimensionalities
Proc. of 21th Int. Conf. on the Physics of Semiconductors 2, 1104-1107, Beijing, China, August 10-14 (1992)
R. Strenz, F. Hirler, R. Küchler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs quantum wires
Surface Science 263, 536-540 (1992)
F. Hirler, R. Küchler, R. Strenz, G. Abstreiter, G. Böhm, J. Smoliner, G. Tränkle
Temperature Distribution in Si-MOSFET's Studied by Micro Raman Spectroscopy
IEEE Transactions on Electron Devices 39 (1992)
R. Ostermeir, K. Brunner, G. Abstreiter, W. Weber
Zone Centre Anisotropy of Optical Phonons in Ultra-Thin Layer Superlattices Observed by Micro-Raman Spectroscopy
Proc. of 21th Int. Conf. on the Physics of Semiconductors 1, 863-866, Beijing, China, August 10-14 (1992)
G. Scamarcio, M. Haines, G. Abstreiter, E. Molinari, S. Baroni, K. Ploog
Comparison of Growth and Strain Relaxation of Si/Ge Superlattices under Compressive and Tensile Strain Field
Mat. Res. Soc. Symp. Proc. 220, 135-140 (1991)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
High Electron Mobility in Modulation-Doped Si/SiGe Quantum Well Structures
Appl. Phys. Lett. 59 (1991)
G. Schuberth, F. Schäffler, M. Besson, G. Abstreiter, E. Gornik
High Resolution Imaging of Twin Intersections in Si/Ge Superlattices on Ge (001) Substrates
Proc. of the 7th Int. Conf. on Microscopy of Semiconducting Materials, Oxford, March 25-28, 1991. IOP Publishing Ltd, 1991. 21-26. (1991)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
Integrated wavelength-selective GaAs/AlGaAs multi-quantum-well detectors
Semicond. Sci. Technol. 6, C128-129 (1991)
A. Köck, E. Gornik, G. Abstreiter, G. Böhm, M. Walther, G. Weimann
Intersubband Absorption and Real Space Electron Transfer in GaAs Quantum Wells
Resonant Tunneling in Semiconductors: Physics and Applications. Eds.: L.L. Chang, E. E. Mendez and C. Tejedor.Plenum Press, N.Y., 1991. 505-513. (1991)
G. Abstreiter, M. Besson, R. Heinrich, A. Köck, W. Schlapp, G. Weimann, R. Zachai
Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells
Mat. Res. Soc. Symp. Proc. 220, 379-381 (1991)
H. Hertle, G. Schuberth, E. Gornik, G. Abstreiter, F. Schäffler
Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells
Appl. Phys. Lett. 59 (1991)
H. Hertle, G. Schuberth, E. Gornik, G. Abstreiter, F. Schäffler
Micro-Raman spectroscopy for large in-plane wave vector excitations in quantum-well structures
Light scattering in semiconductor structures and superlattices. Eds.: D. J. Lockwood and J. F. Young. Plenum Press, N.Y., 1991. 561-569. (1991)
G. Abstreiter, S. Beeck, T. Egeler, A. Huber
Optical Properties of Type I and Type II GaAs/AlGaAs Nanostructures
Physics of Nanostructures, 301-308, Proc. of SUSSP38, St. Andrews, July-August 1991 (1991)
K. Brunner, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann
Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts
Appl. Phys. Lett. 58, 1007-1009 (1991)
F. U. Herrmann, S. Beeck, G. Abstreiter, C. Hanke, C. Hoyler, L. Korte
Resonant Tunneling of Holes in Si/Si1-xGex Quantum Well Structures
Mat. Res. Soc. Symp. Proc. 220, 409-411 (1991)
G. Schuberth, G. Abstreiter, E. Gornik, F. Schäffler, J. F. Luy
Resonant Tunneling of Holes in Si/SixGe1-x Quantum-Well Structures
Phys. Rev. B43 (1991)
G. Schuberth, G. Abstreiter, E. Gornik, F. Schäffler, J. F. Luy
Strained layer heterostructures and superlattices based on group IV elements
Condensed Systems of Low-Dimensionality. Eds. J.L. Beeby, P. K. Bhattacharya, P. Ch. Gravelle, F. Koch and D. J. Lockwood. Plenum Press, N.Y., 1991. 471-480. (1991)
G. Abstreiter, K. Eberl, E. Friess, U. Menczigar, W. Wegscheider
Symmetry Properties of Short Period (001) Si/Ge Superlattices
Superlattices and Microstructures, 9 (1991)
K. Eberl, W. Wegscheider, G. Abstreiter, H. Cerva, H. Oppolzer
Anisotropic Plasmon Dispersion in a Lateral Quantum-Wire Superlattice
Phys. Rev. Lett. 65 (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, P. Grambow
Band Offset in Elastically Strained InGaAs/GaAs Multiple Quantum Wells determined by Optical Absorption and Electronic Raman Scattering
Appl. Phys. Lett. 56 (1990)
J. P. Reithmaier, R. Höger, H. Riechert, A. Heberle, G. Abstreiter, G. Weimann
Grating Coupler Effects on Inelastic Light Scattering by Plasmons in Micro Structured GaAs MQW Systems
Surface Science 229, 391-393 (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp
High Resolution Micro Raman Spectroscopy of GaAs/AlGaAs Quantum Well Lasers in the Low Power Range
Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, September 24-27, 1990. IOP Publishing Ltd., 1990. 561-566. (1990)
S. Beeck, F. U. Herrmann, G. Abstreiter, C. Hanke, L. Korte
Highly Strained ?-Sn/Ge Superlattices - New Man-made Semiconductors
Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990. Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1685-1688 (1990)
W. Wegscheider, K. Eberl, U. Menczigar, J. Olajos, G. Abstreiter, P. Vogl
Inelastic Light Scattering by Electrons in Microstructured Quantum Wells
Solid State Sciences 97: Localization and Confinement of Electrons in Semiconductors, Springer-Verlag, Berlin 1990 (1990)
G. Abstreiter, T. Egeler
Local Temperature Distribution in Si-MOSFET`s Studied by Micro-Raman Spectroscopy
Proc. of the 20th ESSDERC, Nottingham, 1990, Bristol: Hilger, 591-594 (1990)
R. Ostermeir, K. Brunner, G. Abstreiter, W. Weber
Negative Infrared Photoconductivity in Narrow GaAs/AlGaAs Multiple Quantum Well Strucutres
Surface Science 228, 465-467 (1990)
R. Heinrich, R. Zachai, M. Besson, T. Egeler, G. Abstreiter, W. Schlapp, G. Weimann
New Relaxation Mechanism in Short Period Si/Ge Strained-Layer Superlattices
Mat. Res. Soc. Symp. Proc. Vol. 183 183, 155-160 (1990)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
Novel Relaxation Process in Strained Si/Ge Superlattices Grown on Ge (001)
Appl. Phys. Lett. 57 (1990)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer
Photoluminescence in Short Period Si/Ge Strained Layer Superlattices Grown on Si and Ge Substrates
Surface Science 228, 267-269 (1990)
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel
Photoluminescence in Short-Period Si/Ge Strained-Layer Superlattices
Phys. Rev. Lett. 64 (1990)
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel
Plasmon Excitations in lateral GaAs/(AlGa)As Quantum Wire Superlattices
Proc. of the 20th Int.Conf. on the Physics of Semiconductors (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp
Relevant Scattering Processes, Band Gap Renormalization and Moss-Burstein shift in Modulation Doped Narrow GaAs/AlGaAs Multiple Quantum Wells
Surface Science 229, 398-401 (1990)
U. Bockelmann, P. Hiergeist, G. Abstreiter, G. Weimann, W. Schlapp
Single-Particle and Transport Scattering Times in Narrow GaAs/AlxGa1-xAs Quantum Wells
Phys. Rev. B41 (1990)
U. Bockelmann, G. Abstreiter, G. Weimann, W. Schlapp
Investigations of GaAs/AlGaAs Quantum Well lasers by Micro Raman Spectroscopy
Proc. of the 19th European Solid State Device Research Conference (1989)
S. Beeck, T. Egeler, G. Abstreiter, H. Brugger, P. W. Epperlein, D. J. Webb, C. Hanke
Phonons and Optical Properties of Si/Ge Superlattices
Spectroscopy of Semiconductor Microstructures, Venice, Italy, May 9-13, 1989. Eds.: G. Fasol, A. Fasolino, and P. Lugli. Plenum Press, N.Y. 1989. 165-174. (1989)
G. Abstreiter, K. Eberl, E. Friess, U. Menczigar, W. Wegscheider, R. Zachai
Picosecond Intersubband Spectroscopy
Superlattices and Microstructures 5 (1989)
A. Seilmeier, M. Wörner, G. Abstreiter, G. Weimann, W. Schlapp
Plasmon Excitations in Layered 2D Electron Gas Systems with Large In-Plane Wave Vector
Superlattices and Microstructures 5 (1989)
T. Egeler, S. Beeck, G. Abstreiter, G. Weimann, W. Schlapp
Silicon/Germanium Strained Layer Superlattices
J. of Crystal Growth 95, 431-438 (1989)
G. Abstreiter, K. Eberl, E. Friess, W. Wegscheider, R. Zachai
Strain at Si-Si02 Interfaces Studied by Micro-Raman Spectroscopy
Appl. Surf. Science 39, 116-126 (1989)
K. Brunner, G. Abstreiter, B. O. Kolbesen, H. W. Meul
Annealing Effects in short period Si-Ge strained layer superlattices
Semicond. Sci. Technol. 3, 1166-1170 (1988)
H. Brugger, E. Friess, G. Abstreiter, E. Kasper, H. Kibbel
Direct Observation of Intersubband Relaxation in Narrow Multiple Quamtum Well Structures
Solid-State Electronics 31, 767-770 (1988)
A. Seilmeier, H. J. Hübner, M. Wörner, G. Abstreiter, G. Weimann, W. Schlapp
Electronic Excitations in Narrow GaAs/AlxGa1-xAs Quantum Well Structures
Surface Science 196, 613-618 (1988)
G. Abstreiter, T. Egeler, S. Beeck, A. Seilmeier, H. J. Hübner, G. Weimann, W. Schlapp
Interface Roughness Scattering and Electron Mobilities in Thin GaAs Quantum Wells
Europhys. Letters 6 (1988)
R. Gottinger, A. Gold, G. Abstreiter, G. Weimann, W. Schlapp
Intersubband Relaxation in GaAs/AlxGa1-xAs Quantum Well Structures Observed Directly by an Infrared Bleacing Technique
Phys. Rev. Lett. 59 (1987)
A. Seilmeier, H. J. Hübner, G. Abstreiter, G. Weimann, W. Schlapp
Silicon-Germanium Superlattices
SPIE 792, Vol. 792, Quantum Well and Superlattice Physics, 77-85 (1987)
G. Abstreiter, H. Brugger, K. Eberl, R. Zachai
Dispersion of Folded Phonons in Si/SixGe1-x Superlattices
Superlattices and Microstructures 2 (1986)
H. Brugger, H. Reiner, G. Abstreiter, H. Jorke, H. J. Herzog, E. Kasper
Folded acoustic phonons in Si/SixGe1-x Superlattices
Phys. Rev. B33, 5928-5930 (1986)
H. Brugger, G. Abstreiter, H. Jorke, H. J. Herzog, E. Kasper
Inelastic Light Scattering by Electronic Excitations in Semiconductor Heterostructures
IEEE QE22, 1771-1784 (1986)
G. Abstreiter, R. Merlin, A. Pinczuk
Internal Photoemission - A Suitable Method for Determining Band Offsets in Semiconductor Heterostructures
Surface Science 174, 312-317 (1986)
G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp
Optical and Electronic Properties of Si/SiGe Superlattices
Solid State Sciences 67: Two-Dimensional Systems:Physics and New Devices., F. Kuchar, and H. Heinrich. Springer-Verlag, Berlin 1986. 130-139. (1986)
G. Abstreiter, H. Brugger, T. Wolf, R. Zachai, C. Zeller
Raman Scattering for Studies of Semiconductor-Heterostructures and Superlattices
Proc. of the 18th Int. Conf. on the Physics of Semiconductor 1, Stockholm, Sweden, August 11-15, 1986. Ed.: O. Engström. World Scientific, Singapore 1987. Vol. 1, 739-746. (1986)
G. Abstreiter, H. Brugger
Two-Dimensional Electron Systems in Si/SixGe1-x Strained-Layer Superlattices
Surface Science 174, 640-645 (1986)
G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog
Internal Photoemission in GaAs/(AlxGa1-x)As Heterostructures
Physica 134B, 433- 438 (1985)
G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixGe1-x Superlattices
Phys. Rev. Lett. 54 (1985)
G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog
Tunable electroluminescence in GaAs-doping multilayer structures
J. Vac. Sci. Technol. B3 (1985)
G. Abstreiter, H. Kirchstetter, K. Ploog
Hole sub-bands on silicon surfaces
J. Phys. C:Solid State Phys. 17, 1617-1631 (1984)
M. Baumgartner, G. Abstreiter, E. Bangert
Light Scattering by Free Carrier Excitations in Semiconductors
Topics in Applied Physics 54: Light Scattering in Solids IV. Eds.: M. Cardona and G. Güntherodt. Springer-Verlag, Berlin 1984. 5-150. (1984)
G. Abstreiter, M. Cardona, A. Pinczuk
Resonant Tunneling in Doping Quantum Well Structures
Surface Science 142, 456-459 (1984)
C. Zeller, G. Abstreiter, K. Ploog
Resonant tunneling in MBE-grown pnp-GaAs quantum well structures
Inst. Phys. Conf. Ser. No. 74, Chapter 5, 339-344 (1984)
U. Prechtel, C. Zeller, G. Abstreiter, K. Ploog
Quantization of Photo-excited carriers in GaAs Doping Superlattices
Physica 117B and 118B, 729-731 (1983)
C. Zeller, B. Vinter, G. Abstreiter, K. Ploog
Subband Energies in Accumulation Layers on InP
Solid State Communications 47 (1983)
G. Abstreiter, R. Huber, G. Tränkle, B. Vinter
Inelastic Light Scattering in Hole-Accumulation Layers on Silicon
Solid State Communications 44 (1982)
G. Abstreiter, U. Claessen, G. Tränkle
Quantization of Photoexcited Electrons in GaAs nipi-Crystals
Surface Science 113, 479-480 (1982)
G. Abstreiter, G. H. Döhler, H. Künzel, D. Olego, K. Ploog, R. Ruden, H. J. Stolz
Quasi-two-dimensional photoexcited carriers in GaAs doping superlattices
Phys. Rev. B26 (1982)
C. Zeller, B. Vinter, G. Abstreiter, K. Ploog
The Influence of Temperature and Incident Light Intensity on Single Particle and Collective Excitations in Multilayer Structures
Surface Science 113, 85-88 (1982)
C. Zeller, G. Abstreiter, K. Ploog
Study of GaAs-AlxGa1-xAs Multilayer Systems by Resonant Inelastic Light Scattering Techniques
Inst. Phys. Conf. Ser. No. 56: Chapter 9, 741-749 (1981)
G. Abstreiter, C. Zeller
Determination of Existing Stress in Silicon Films on Sapphire Substrate Using Raman Spectroscopy
Solid-State Electronics 23, 31-33 (1980)
T. Englert, G. Abstreiter, J. Pontcharra
Dynamical effects of the interaction between 4f electrons and optical phonons in rare-earth hydroxides, especially in Tb(OH)3 and Nd(OH)3
J. Phys. C: Solid State Phys. 13, 4545-4564 (1980)
K. Ahrens, H. Gerlinger, H. Lichtblau, G. Schaack, G. Abstreiter, S. Mroczkowski
Magnetic Bragg Scattering in Antiferromagnets Observed through Raman Scattering from Phonons
J. of Magnetism and Magn. Mat. 15-18, 777-778 (1980)
G. Güntherodt, G. Abstreiter, W. Bauhofer, G. Benedek, E. Anastassakis
Coupled Plasmon-L0 Phonon Modes and Lindhard-Mermin Dielectric Function of n-GaAs
Solid State Communications 30, 703-707 (1979)
G. Abstreiter, R. Trommer, M. Cardona, A. Pinczuk
Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-
Phys. Rev. Lett. 42 (1979)
G. Abstreiter, K. Ploog
Resonance Enhancement of Raman Scattering by Electron-Gas Excitations of n-GaAs
Solid State Communications 30, 429-432 (1979)
A. Pinczuk, G. Abstreiter, R. Trommer, M. Cardona
Raman Spectroscopy - A Versatile Tool for Characterization of Thin Films and Heterostructures of GaAs and AlxGa1-xAs
Applied Physics 16, 345-352 (1978)
G. Abstreiter, E. Bauser, A. Fischer, K. Ploog
Anti-Stokes Luminescence in Europium Monochalcogenides
Solid State Communications 22, 609-613 (1977)
R. Merlin, R. Tsu, G. Güntherodt, G. Abstreiter, M. W. Shafer
Forbidden Raman Scattering by L0 Phonons in GaAs
Proc. of the 2nd Int. Conf. on Lattice Dynamics, Paris, September 5-9, 1977. Ed.: M. Balkanski. Flammarion, Paris 1978. 189-191. (1977)
R. Trommer, G. Abstreiter, M. Cardona
Raman Scattering by Wavevector Dependent Coupled Plasmon - L0 Phonons of n-GaAs
Solid State Communications 21, 959-962 (1977)
A. Pinczuk, G. Abstreiter, R. Trommer, M. Cardona
Raman Scattering Studies of Coupled Plasmon-L0 Phonon Modes in n-GaAs
Proc. of the 2nd Int. Conf. on Lattice Dynamics, Paris, September 5-9, 1977. Ed.: M. Balkanski. Flammarion, Paris 1978. 191-192. (1977)
G. Abstreiter, A. Pinczuk, R. Trommer, M. Cardona
Cyclotron resonance of electrons in surface space-charge layers on silicon
Phys. Rev. B14 (1976)
G. Abstreiter, J. P. Kotthaus, J. F. Koch, G. Dorda
Electrons in a Surface Space Charge Layer on Germanium-Shubnikov-de Haas Oscillations and Cyclotron Resonance
Solid State Communications 18, 1397-1399 (1976)
W. Weber, G. Abstreiter, J. F. Koch
Frequency dependence of surface cyclotron resonance in Si
Phys. Rev. B14 (1976)
G. Abstreiter, J. F. Koch, P. Goy, Y. Couder
Raman Scattering by Longitudinal Modes in Opaque n-GaAs
Proc. of the 13th Int. Conf. on the Physics of Semiconductors, Rome, August 30 - September 3, 1976. Ed.: F. G. Fumi. Tipografia Marves, Rome 1976. 779-782. (1976)
G. Abstreiter, A. Pinczuk, R. Trommer, R. Tsu
Cyclotron Resonance of Localized Electrons on a Si Surface
Phys. Rev. Lett. 34 (1975)
J. P. Kotthaus, G. Abstreiter, J. F. Koch, R. Ranvaud
Cyclotron Resonance of Electrons in an Inversion Layer on Si
Phys. Rev. Lett. 32 (1974)
G. Abstreiter, P. Kneschaurek, J. P. Kotthaus, J. F. Koch
Subharmonic Structure of Cyclotron Resonance in an Inversion Layer on Si
Solid State Communications 15, 517-519 (1974)
J. P. Kotthaus, G. Abstreiter, J. F. Koch
Influence of electron capture decay of 57Co on the Mössbauer emission spectrum of hydrated cobalt chlorides
J. Chem Phys. 59 (1973)
J. M. Friedt, G. K. Shenoy, G. Abstreiter, R. Poinsot
Nuclear parameters of the 140 keV Mössbauer level in 99Tc from Mössbauer spectroscopy
J. Phys. A6, L144-L147 (1973)
G. K. Shenoy, G. Abstreiter, G. M. Kalvius, K. Schwochau, K. H. Linse





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