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Quantum confinement enhanced thermoelectric properties in modulation-doped GaAs-AlGaAs core-shell nanowires
Advanced Materials 32, 1905458 (2020)
S. Fust, A. Faustmann, D. J. Carrad, J. Bissinger, B. Loitsch, M. Doeblinger, J. Becker, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref | Optical absorption of composition-tunable InGaAs nanowire arrays
Nanotechnology 30, 495703 (2019)
J. Treu, X. Xu, K. Ott, K. Saller, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref | Break-down of corner states and carrier localization by monolayer fluctuations in radial nanowire quantum wells
Nano Letters 19, 3336 (2019)
M. M. Sonner, A. Sitek, L. Janker, D. Rudolph, D. Ruhstorfer, M. Döblinger, A. Manolescu, G. Abstreiter, J. J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner
Online Ref | A method for fabricating a nanostructure
US Patent, App. 15/759,986 (2018)
G. Koblmueller, B. Mayer, J. Finley, G. Abstreiter
Online Ref | Carrier trapping and activation at short-period wurtzite/zinc-blende stacking sequences in polytypic InAs nanowires
Phys. Rev. B 97, 115306 (2018)
J. Becker, S. Morkoetter, J. Treu, M. Sonner, M. Speckbacher, M. Doeblinger, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref | Quantum transport and sub-band structure of modulation-doped GaAs/AlAs core–superlattice nanowires
Nano Letters 17, 4886 (2017)
D. M. Irber, J. Seidl, D. J. Carrad, J. Becker, N. Jeon, B. Loitsch, J. Winnerl, S. Matich, M. Doeblinger, Y. Tang, S. Morkoetter, G. Abstreiter, J. J. Finley, M. Grayson, L. J. Lauhon, G. Koblmueller
Online Ref | GaAs-AlGaAs core-shell nanowire lasers on silicon: Invited Review
Semicond. Sci. Techol. Topical Review (2017)
G. Koblmueller, B. Mayer, T. Stettner, G. Abstreiter, J. Finley
Online Ref | Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
Appl. Phys. Lett. 108, 053110 (2016)
J. Treu, M. Speckbacher, K. Saller, S. Morkoetter, M. Doeblinger, X. Xu, H. Riedl, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref | Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization
New J. Phys. 18, 063009 (2016)
B. Loitsch, M. Müller, J. Winnerl, P. Veit, D. Rudolph, G. Abstreiter, J. J. Finley, F. Bertram, J. Christen, G. Koblmueller
Online Ref | Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires
Nano Letters 16, 5135 (2016)
M. Speckbacher, J. Treu, T. J. Whittles, W. M. Linhart, X. Xu, K. Saller, V. R. Dhanak, G. Abstreiter, J. J. Finley, T. D. Veal, G. Koblmueller
Online Ref | Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires
Appl. Phys. Lett. 109, 093105 (2016)
B. Loitsch, N. Jeon, M. Doeblinger, J. Winnerl, E. Parzinger, S. Matich, U. Wurstbauer, H. Riedl, G. Abstreiter, J. J. Finley, L. J. Lauhon, G. Koblmueller
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| Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
Appl. Phys. Lett. 108, 11108 (2016)
T. Stettner, P. Zimmermann, B. Loitsch, M. Döblinger, A. Regler, B. Mayer, J. Winnerl, S. Matich, H. Riedl, M. Kaniber, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref | Continuous wave lasing from individual GaAs-AlGaAs core-shell nanowires
Appl. Phys. Lett. 108, 71107 (2016)
B. Mayer, L. Janker, D. Rudolph, B. Loitsch, T. Kostenbader, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref | Coulomb mediated hybridization of excitons in coupled quantum dots
Physical Review Letters 116, 77401 (2016)
P. L. Ardelt, K. Gawarecki, K. Mueller, A. Waeber, A. Bechtold, K. Oberhofer, J. M. Daniels, F. Klotz, M. Bichler, T. Kuhn, H. Krenner, P. Machnikowski, G. Abstreiter, J. Finley
Online Ref | Monolithically integrated high-beta nanowire lasers on silicon
Nano Letters 16, 152 (2016)
B. Mayer, L. Janker, B. Loitsch, J. Treu, T. Kostenbader, S. Lichtmannecker, T. Reichert, S. Morkötter, M. Kaniber, G. Abstreiter, C. Gies, G. Koblmueller, J. Finley
Online Ref | The native material limit of electron and hole mobilities in semiconductor nanowires
ACS Nano, 4942 (2016)
J. B. Kinzel, F. J. R. Schuelein, M. Weiss, L. Janker, D. D. Buehler, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. Krenner
Online Ref | Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse-reaction growth
Advanced Materials 27, 2195 (2015)
B. Loitsch, D. Rudolph, S. Morkoetter, M. Doeblinger, G. Grimaldi, L. Hanschke, S. Matich, E. Parzinger, U. Wurstbauer, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref | Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core–shell nanowire transistors
Nano Letters 15, 3295 (2015)
S. Morkoetter, N. Jeon, D. Rudolph, B. Loitsch, D. Spirkoska, E. Hoffmann, M. Doeblinger, S. Matich, J. J. Finley, L. J. Lauhon, G. Abstreiter, G. Koblmueller
Online Ref | Lattice-matched InGaAs–InAlAs core–shell nanowires with improved luminescence and photoresponse properties
Nano Letters 15, 3533 (2015)
J. Treu, T. Stettner, M. Watzinger, S. Morkoetter, M. Doeblinger, S. Matich, K. Saller, M. Bichler, G. Abstreiter, J. J. Finley, J. Stangl, G. Koblmueller
Online Ref | Alloy Fluctuations Act as Quantum Dot-like Emitters in GaAs-AlGaAs Core–Shell Nanowires
ACS Nano 9, 8335 (2015)
N. Jeon, B. Loitsch, S. Morkötter, G. Abstreiter, J. Finley, H. Krenner, G. Koblmueller, L. Lauhon
Online Ref | Crystal phase quantum dots in the ultrathin core of GaAs-AlGaAs core-shell nanowires
Nano Letters 15, 7544 (2015)
B. Loitsch, J. Winnerl, G. Grimaldi, J. Wierzbowski, D. Rudolph, S. Morkötter, M. Doeblinger, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref | Photocurrents in a single InAs nanowire/ silicon heterojunction
ACS Nano 9, 9849 (2015)
A. Brenneis, J. Overbeck, J. Treu, S. Hertenberger, S. Morkötter, M. Döblinger, J. Finley, G. Abstreiter, G. Koblmueller, A. Holleitner
Online Ref | |
| Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires
Nano Letters 15, 6869–6874 (2015)
N. Erhard, S. Zenger, S. Morkötter, D. Rudolph, M. Weiss, H. Krenner, H. Karl, G. Abstreiter, J. Finley, G. Koblmueller, A. Holleitner
Online Ref | Effect of interwire separation on growth kinetics and properties of site-selective GaAs nanowires
Appl. Phys. Lett. 105, 033111 (2014)
D. Rudolph, L. Schweickert, S. Morkoetter, B. Loitsch, S. Hertenberger, J. Becker, M. Bichler, G. Abstreiter, J. J. Finley, G. Koblmueller
Online Ref | Dissipative preparation of the exciton and biexciton in self-assembled quantum dots on picosecond timescales
Phys. Rev. B 90, 241404 (2014)
P. L. Ardelt, L. Hanschke, K. A. Fischer, K. Mueller, A. Kleinkauf, M. Koller, A. Bechtold, T. Simmet, J. Wierzbowski, H. Riedl, G. Abstreiter, J. Finley
Online Ref | Dynamic acoustic control of individual optically active quantum dot-like emission centers in heterostructure nanowires
Nano Letters 14, 2256 (2014)
M. Weiss, J. B. Kinzel, F. J. R. Schuelein, M. Heigl, D. Rudolph, S. Morkötter, M. Doeblinger, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. J. Krenner
Online Ref | Pressure dependence of Raman spectrum in InAs nanowires
J. Phys. Cond. Matt 26 , 235301 (2014)
S. Yazji, I. Zardo, S. Hertenberger, S. Morkötter, G. Koblmueller, G. Abstreiter, P. Postorino
Online Ref | Radio frequency occupancy state control of single nanowire quantum dot
J. Phys. D: Appl. Phys. 47, 394011 (2014)
M. Weiss, F. J. R. Schuelein, J. B. Kinzel, M. Heigl, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, A. Wixforth, G. Koblmueller, H. J. Krenner
Online Ref | Role of microstructure on optical properties in high-uniformity InGaAs nanowire arrays: Evidence of a wider wurtzite band gap
Phys. Rev. B 87, 205303 (2013)
S. Morkoetter, S. Funk, M. Liang, M. Doeblinger, S. Hertenberger, J. Treu, D Rudolph, A. Yadav, J. Becker, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref | Spontaneous alloy composition ordering in GaAs-AlGaAs core–shell nanowires
Nano Letters 13, 1522 (2013)
D. Rudolph, S. Funk, M. Doeblinger, S. Morkoetter, S. Hertenberger, L. Schweickert, J. Becker, S. Matich, M. Bichler, D. Spirkoska, I. Zardo, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref | Thermal conductivity tensor of semiconductor layers using two-wire 3-omega method
Quantum Sensing and Nanophotonic Devices X 8631, 863129 (2013)
C. Zhou, G. Koblmueller, M. Bichler, G. Abstreiter, M. Grayson
Online Ref | Enhanced luminescence properties of InAs–InAsP core–shell nanowires
Nano Letters 13, 6070 (2013)
J. Treu, M. Bormann, H. Schmeiduch, M. Doeblinger, S. Morkötter, S. Matich, P. Wiecha, K. Saller, B. Mayer, M. Bichler, M. C. Amann, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref | Probing ultrafast carrier tunneling dynamics in individual quantum dots and molecules
Annalen der Physik 525, 49-58 (2013)
K. Mueller, A. Bechtold, C. Ruppert, T. Kaldewey, M. Zecherle, J. S. Wildmann, M. Bichler, H. J. Krenner, J. M. Villas‐Bôas, G. Abstreiter, M. Betz, J. J. Finley
Online Ref | |
| Lasing from individual GaAs-AlGaAs core-shell nanowires up to room-temperature
Nature Comm. 4, 2931 (2013)
B. Mayer, D. Rudolph, J. Schnell, S. Morkötter, J. Winnerl, J. Treu, K. Mueller, G. Bracher, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref | Laterally self-ordered silicon-germanium islands with optimized confinement properties
Appl. Phys. Lett. 103, 63105 (2013)
T. Zabel, N. Sircar, N. Hauke, J. Zweck, M. Döblinger, M. Kaniber, J. Finley, G. Abstreiter, D. Bougeard
Online Ref | Organophosphonates as model system for studying electronic transport through monolayers on SiO2/Si surfaces
102 (2013)
A. Bora, A. Pathak, K. C. Liao, M. I. Vexler, A. Kuligk, A. Cattani-Scholz, B. Meinerzhagen, G. Abstreiter, J. Schwartz, M. Tornow
Online Ref | Probing the trapping and thermal activation dynamics of excitons at single twin defects in GaAs–AlGaAs core–shell nanowires
New J. Phys. 15, 113032 (2013)
D. Rudolph, L. Schweickert, S. Morkötter, L. Hanschke, S. Hertenberger, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley
Online Ref | Probing ultrafast carrier tunneling dynamics in individual quantum dots and molecules
(2013)
K. Mueller, A. Bechtold, C. Ruppert, T. Kaldewey, M. Zecherle, J. Wildmann, M. Bichler, H. Krenner, J. M. Villas-Boas, G. Abstreiter, M. Betz, J. Finley
Online Ref | Ultrafast photocurrents and THz generation in single InAs nanowires
Annalen d. Physik 525, 180 (2013)
N. Erhard, P. Seifert, L. Prechtel, S. Hertenberger, H. Karl, G. Abstreiter, G. Koblmueller, A. Holleitner
Online Ref | All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current
Scientific Reports 3, 1906 (2013)
K. Mueller, T. Kaldewey, R. Ripszam, J. Wildmann, A. Bechtold, M. Bichler, G. Koblmueller, G. Abstreiter, J. Finley
Online Ref | Size, composition, and doping effects on In (Ga) As nanowire/Si tunnel diodes probed by conductive atomic force microscopy
Appl. Phys. Lett. 101, 233102 (2012)
T. Yang, S. Hertenberger, S. Morkoetter, G. Abstreiter, G. Koblmueller
Online Ref | High compositional homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)
Appl. Phys. Lett. 101, 043116 (2012)
S. Hertenberger, S. Funk, K. Vizbaras, A. Yadav, D. Rudolph, J. Becker, S. Bolte, M. Doeblinger, M. Bichler, G. Scarpa, P. Lugli, I. Zardo, J. J. Finley, M.-C. Amann, G. Abstreiter, G. Koblmueller
Online Ref | Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
Nanotechnology 23, 235602 (2012)
S. Hertenberger, D. Rudolph, J. Becker, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref | A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands
New J. Phys. 14, 83035 (2012)
N. Hauke, A. Tandaechanurat, T. Zabel, T. Reichert, H. Takagi, M. Kaniber, S. Iwamoto, D. Bougeard, J. Finley, G. Abstreiter, Y. Arakawa
Online Ref | |
| All optical preparation, storage, and readout of a single spin in an individual quantum dot
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V. Jovanov, F. Klotz, S. Kapfinger, D. Heiss, S. Spiga, D. Rudolph, M. Bichler, M. S. Brandt, G. Abstreiter, J. Finley
Online Ref | Electrical Control of Interdot Electron Tunneling in a Double InGaAs Quantum-Dot Nanostructure
Physical Review Letters 108, 197402 (2012)
K. Mueller, A. Bechtold, C. Ruppert, M. Zecherle, G. Reithmaier, M. Bichler, H. Krenner, G. Abstreiter, A. Holleitner, J. M. Villas-Boas, J. Finley
Online Ref | Enlarged magnetic focusing radius of photoinduced ballistic currents
Phys. Rev. B 86, 115315 (2012)
M. Stallhofer, C. Kastl, M. Brändlein, D. Schuh, W. Wegscheider, J. Kotthaus, G. Abstreiter, A. Holleitner
Online Ref | Few electron double quantum dot in an isotopically purified 28Si quantum well
Applied Physics Letters 100, 143110 (2012)
A. Wild, J. Kierig, J. Sailer, J. Ager, E. Haller, G. Abstreiter, S. Ludwig, D. Bougeard
Online Ref | Fluctuation induced luminescence sidebands in the emission spectra of resonantly driven quantum dots
arXiv:1207.6952 (2012) (2012)
F. Laussy, V. Jovanov, E. del Valle, A. Bechtold, S. Kapfinger, K. Mueller, S. Koch, A. Laucht, T. Eissfeller, M. Bichler, G. Abstreiter, J. Finley
Online Ref | High fidelity optical preparation and coherent Larmor precession of a single hole in an InGaAs quantum dot molecule
85 (2012)
K. Mueller, A. Bechtold, C. Ruppert, C. Hautmann, J. Wildmann, T. Kaldewey, M. Bichler, H. Krenner, G. Abstreiter, M. Betz, J. Finley
Online Ref | Highly nonlinear excitonic Zeeman spin splitting in composition-engineered artificial atoms
Phys. Rev. B 85, 165433 (2012)
V. Jovanov, T. Eissfeller, S. Kapfinger, E. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, M. S. Brandt, G. Abstreiter, J. Finley
Online Ref | Molecular Architecture: Construction of Self-Assembled Organophosphonate Duplexes and Their Electrochemical Characterization
28, 7889-7896 (2012)
A. Cattani-Scholz, K. C. Liao, A. Bora, A. Pathak, C. Hundschell, B. Nickel, J. Schwartz, G. Abstreiter, M. Tornow
Online Ref | Pressure Tuning of the Optical Properties of GaAs Nanowires
ACS Nano 6, 3284-3291 (2012)
I. Zardo, S. Yazji, C. Marini, E. Uccelli, A. Fontcuberta i Morral, G. Abstreiter, P. Postorino
Online Ref | Probing ultrafast charge and spin dynamics in a quantum dot molecule
Proc. of SPIE Vol. 8260 8260, 826002 (2012)
K. Mueller, A. Bechtold, C. Ruppert, H. Krenner, M. Bichler, J. M. Villas-Boas, G. Abstreiter, M. Betz, J. Finley
Online Ref | Size, composition and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy
Appl. Phys. Lett., 233102 (2012)
T. Yang, S. Hertenberger, S. Morkötter, G. Abstreiter, G. Koblmueller
Online Ref | |
| Time-resolved photoinduced thermoelectric and transport currents in GaAs nanowires
Nano Letters 12, 2337 (2012)
L. Prechtel, M. Padilla, N. Erhard, H. Karl, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner
Online Ref | Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si
Appl. Phys. Lett. 98, 123114 (2011)
S. Hertenberger, D. Rudolph, S. Bolte, M. Doeblinger, M. Bichler, D. Spirkoska, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref | Direct observation of a noncatalytic growth regime for GaAs nanowires
Nano Letters 11, 3848 (2011)
D. Rudolph, S. Hertenberger, S. Bolte, W. Paosangthong, D. Spirkoska, M. Doeblinger, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref | Direct observation of metastable hot trions in an individual quantum dot
Phys. Rev. B 84, 235321 (2011)
V. Jovanov, S. Kapfinger, M. Bichler, G. Abstreiter, J. Finley
Online Ref | A Pore-Cavity-Pore Device to Trap and Investigate Single Nanoparticles and DNA Molecules in a Femtoliter Compartment: Confined Diffusion and Narrow Escape
Nano Letters 11 (2011)
D. Pedone, M. Langecker, G. Abstreiter, U. Rant
Online Ref | Coherent control of electrical currents in semiconductor nanowires/-tubes
Physica Status Solidi C 8, 1224 (2011)
M. Betz, C. Ruppert, S. Thunich, R. Newson, J. M. Menard, C. Sames, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner, H. M. van Driel
Online Ref | Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities
Physical Review B 84, 85320 (2011)
N. Hauke, S. Lichtmannecker, T. Zabel, F. Laussy, A. Laucht, M. Kaniber, D. Bougeard, G. Abstreiter, J. Finley, Y. Arakawa
Online Ref | Crystal Structure Transfer in Core/Shell Nanowires
Nano Lett. 11, 1690-1694 (2011)
R. E. Algra, M. Hocevar, M. A. Verheijen, I. Zardo, G. G. W. Immink, W. J. P. van Enckevort, G. Abstreiter, L. P. Kouwenhoven, E. Vlieg, E. P. A. M. Bakkers
Online Ref | Directional and Dynamic Modulation of the Optical Emission of an Individual GaAs Nanowire Using Surface Acoustic Waves
Nano Letters 11, 1512 (2011)
J. B. Kinzel, D. Rudolph, M. Bichler, G. Abstreiter, J. Finley, G. Koblmueller, A. Wixforth, H. Krenner
Online Ref | Excited state quantum couplings and optical switching of an artificial molecule
Phys. Rev. B 84, 81302 (2011)
K. Mueller, G. Reithmaier, E. Clark, V. Jovanov, M. Bichler, H. Krenner, M. Betz, G. Abstreiter, J. Finley
Online Ref | Interplay between electrical transport properties of GeMn thin films and Ge substrates
Phys. Rev. B 83, 125306 (2011)
N. Sircar, S. Ahlers, C. Majer, G. Abstreiter, D. Bougeard
Online Ref | |
| Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots
Phys. Rev. B 83, 161303 (2011)
V. Jovanov, T. Eissfeller, S. Kaphinger, E. C. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, G. Abstreiter, J. J. Finley
Online Ref | Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots
Phys. Rev. B 83, 161303 (2011)
V. Jovanov, T. Eissfeller, S. Kapfinger, E. Clark, F. Klotz, M. Bichler, J. G. Keizer, P. M. Koenraad, G. Abstreiter, J. Finley
Online Ref | Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area molecular beam epitaxy
J. Appl. Phys. 108, 114316 (2010)
S. Hertenberger, D. Rudolph, M. Bichler, J. J. Finley, G. Abstreiter, G. Koblmueller
Online Ref | All-optical coherent control of electrical currents in single GaAs nanowires
in International Conference on Ultrafast Phenomena, OSA Technical Digest ThC6 (2010)
C. Ruppert, S. Thunich, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner, M. Betz
Online Ref | Asymmetric optical nuclear spin pumping in a single uncharged quantum dot
Phys. Rev. B 82, 121307 (2010)
F. Klotz, V. Jovanov, J. Kierig, E. Clark, M. Bichler, G. Abstreiter, H. Schwager, G. Giedke, M. S. Brandt, J. Finley
Online Ref | Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities
New Journal of Physics 12, 53005 (2010)
N. Hauke, T. Zabel, K. Mueller, M. Kaniber, A. Laucht, D. Bougeard, G. Abstreiter, J. Finley, Y. Arakawa
Online Ref | Multiple Nanowire Species Synthesized on a Single Chip by Selectively Addressable Horizontal Nanochannels
Nano Letters 10(4), 1341 (2010)
Y. Xiang, K. Andreas, L. Moreno Codinachs, N. Kornelius, G. Abstreiter, A. Fontcuberta i Morral, B. Thomas | Multiplexed Parallel Single Transport Recordings on Nanopore Arrays
10 (2010)
A. Kleefen, D. Pedone, C. Grunwald, R. Wei, M. Firnkes, G. Abstreiter, U. Rant, R. Tampé
Online Ref | Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dot
, 96 (2010)
F. Klotz, V. Jovanov, J. Kierig, E. Clark, D. Rudolph, D. Heiss, M. Bichler, G. Abstreiter, M. S. Brandt, J. Finley
Online Ref | Optically monitoring electron spin relaxation in a single quantum dot using a spin memory device
Phys. Rev. B 82, 245316 (2010)
D. Heiss, V. Jovanov, F. Klotz, D. Rudolph, M. Bichler, G. Abstreiter, M. S. Brandt, J. Finley
Online Ref | Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond
97 (2010)
M. Stallhofer, M. Seifert, M. Hauf, G. Abstreiter, M. Stutzmann, J. A. Garrido, A. Holleitner
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| Quantum interference control of femtosecond, µA current bursts in single GaAs nanowires
Nano Letters 10, 1799 (2010)
C. Ruppert, S. Thunich, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner, M. Betz
Online Ref | Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures’
Nanotechnology 20, 075603 (2009) (2009)
M. Heiß, A. Gustafsson, S. Conesa-Boj, F. Peiro, J. R. Morante, G. Abstreiter, J. Arbiol, L. Samuelson, A. Fontcuberta i Morral | GaAs nanowires and related prismatic heterostructures
Semiconductor Science and Technology, 24, 113001 (2009)
D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral
Online Ref | Ge1-x Mnx Clusters: Central Structural and Magnetic Building Blocks of Nanoscale Wire-Like Self-Assembly in a Magnetic Semiconductor
Nano Letters 9 (11) (2009)
D. Bougeard, N. Sircar, S. Ahlers, V. Lang, G. Abstreiter, A. Trampert, J. M. LeBeau, S. Stemmer, D. W. Saxey, A. Cerezo
Online Ref | Investigation of a contacting scheme for self-assembled cleaved edge overgrown InAs nanowires and quantum dot arrays
206, 1620 (2009)
M. Fehr, E. Uccelli, S. Dasgupta, M. Bichler, L. Steinke, G. Abstreiter, M. Grayson, A. Fontcuberta i Morral | Long Range Epitaxial Growth of Prismatic Heterostructures on the facets of Catalyst-Free GaAs Nanowires
J. Mater. Chemistry 19, 840 (2009)
M. Heigoldt, J. Arbiol, D. Spirkoska, J. M. Rebled, S. Conesa-Boj, G. Abstreiter, F. Peiró, J. R. Morante, A. Fontcuberta i Morral | Outcoupling of Light Generated in a Monolithic Silicon Photonic Crystal Nanocavity through a Lateral Waveguide
Jpn. J. Appl. Phys 48 (2009)
D. Dorfner, S. Iwamoto, M. Nomura, S. Nakayama, J. Finley, G. Abstreiter, Y. Arakawa
Online Ref | Photocurrent and photoconductance properties of a GaAs nanowire
Applied Physics Letters 95, 83111 (2009)
S. Thunich, L. Prechtel, D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral, A. Holleitner
Online Ref | Photonic Crystal Nanostructures for Optical Biosensing Applications
24 (2009)
D. Dorfner, T. Zabel, T. Hürlimann, N. Hauke, L. Frandsen, U. Rant, G. Abstreiter, J. Finley
Online Ref | Planar Nanogap Electrodes by Direct Nanotransfer Printing
SMALL 5, 579 (2009)
S. Strobel, S. Harrer, G. Scarpa, G. Abstreiter, P. Lugli, M. Tornow
Online Ref | PNA-PEG Modified Silicon Platforms as Functional Bio-Interfaces for Applications in DNA Microarrays and Biosensors
Biomacromolecules 10, 489-496 (2009)
A. Cattani-Scholz, D. Pedone, F. Blobner, G. Abstreiter, J. Schwartz, M. Tornow, L. Andruzzi
Online Ref | |
| Raman Spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects
Physical Review B 80, 245324 (2009)
I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G. Abstreiter, A. Fontcuberta i Morral
Online Ref | Selective optical charge generation, storage, and readout in a single self-assembled quantum dot
Appl. Phys. Lett. 94, 72108 (2009)
D. Heiss, V. Jovanov, M. Caesar, M. Bichler, G. Abstreiter, J. Finley
Online Ref | Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
Physical Review B 80, 245325 (2009)
D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Roessler, F. Peiro, J. R. Morante, G. Abstreiter, L. Samuelson, A. Fontcuberta i Morral
Online Ref | Charge and spin readout scheme for single self-assembled quantum dots
Phys. Rev. B 77, 235442 (2008)
D. Heiss, V. Jovanov, M. Bichler, G. Abstreiter, J. Finley
Online Ref | Controlled synthesis of InAs wires, dot and twin-dot array configurations by Cleaved Edge Overgrowth
19 (2008)
E. Uccelli, M. Bichler, S. Nürnberger, G. Abstreiter, A. Fontcuberta i Morral | Erratum: “Nucleation mechanism of gallium-assisted Molecular Beam Epitaxy growth of Gallium Arsenide nanowires”
Appl. Phys. Lett. 92, 63112 (2008)
A. Fontcuberta i Morral, K. Maslov, C. Colombo, G. Abstreiter, J. Arbiol, J. R. Morante
Online Ref | Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
Phys. Rev. B 77, 155326 (2008)
C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, A. Fontcuberta i Morral
Online Ref | Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy
J. Cryst. Growth, 310, 1049 (2008)
M. Heiß, E. Riedelberg, D. Spirkoska, M. Bichler, G. Abstreiter, A. Fontcuberta i Morral
Online Ref | Growth mechanisms of self assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets
Superlattices and Microstructures 44, 425 (2008)
E. Uccelli, S. Nürnberger, M. Bichler, G. Abstreiter, A. Fontcuberta i Morral
Online Ref | Microstructured horizontal alumina pore arrays as growth templates for large area few and single nanowire devices
phys.stat.sol. (RRL) 2, 59 (2008)
Y. Xiang, W. Lee, K. Nielsch, G. Abstreiter, A. Fontcuberta i Morral | Organophosphonate-Based PNA-Functionalization of Silicon Nanowires for Label-Free DNA Detection
ACSNano 2, 1653-1660 (2008)
A. Cattani-Scholz, D. Pedone, M. Dubey, S. Neppl, B. Nickel, P. Feulner, J. Schwartz, G. Abstreiter, M. Tornow
Online Ref | |
| Room Temperature Nanoimprint Lithography Using Molds Fabricated by Molecular Beam Epitaxy
7, 363 (2008)
S. Harrer, S. Strobel, G. Scarpa, G. Abstreiter, M. Tornow, P. Lugli
Online Ref | Self-assembly of InAs quantum dot structures on cleaved facets
(2008)
E. Uccelli, J. Bauer, M. Bichler, D. Schuh, J. Finley, G. Abstreiter, A. Fontcuberta i Morral
Online Ref | Silicon Photonic Crystal Nanostructures for Refractive Index Sensing
Appl. Phys. Lett. 93, 181103 (2008)
D. Dorfner, T. Hürlimann, T. Zabel, G. Abstreiter, L. H. Frandsen, J. Finley
Online Ref | Silicon-on-insulator based nanopore cavity arrays for lipid membrane investigation
Nanotechnology 19 (2008)
K. Buchholz, A. Tinazli, A. Kleefen, D. Dorfner, D. Pedone, U. Rant, R. Tampe, G. Abstreiter, M. Tornow
Online Ref | Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass
Applied Physics Letters 93, 132102 (2008)
S. Dasgupta, S. Birner, C. Knaak, M. Bichler, A. Fontcuberta i Morral, G. Abstreiter, M. Grayson
Online Ref | Size and environment dependence of surface phonon modes of gallium arsenide nanowires as measured by Raman spectroscopy
Nanotechnology 19, 435704 (2008)
D. Spirkoska, G. Abstreiter, A. Fontcuberta i Morral | The use of molecular beam epitaxy for the synthesis of high purity III–V nanowires
J. Phys.: Condens. Matter 20, 454225 (2008)
D. Spirkoska, C. Colombo, M. Heiß, G. Abstreiter, A. Fontcuberta i Morral
Online Ref | Transmission of light generated in a Silicon Photonic Crystal Nanocavity through a Lateral Waveguide
No Reference given. (2008)
D. Dorfner, S. Iwamoto, M. Nomura, S. Nakayama, J. Finley, G. Abstreiter, Y. Arakawa | Controlling the surface density of DNA on gold by electrically induced desorption
Biosensors and Bioelectronics 23, 326-331 (2007)
K. Arinaga, U. Rant, J. Knezevic, E. Pringsheim, M. Tornow, S. Fujita, G. Abstreiter, N. Yokoyama | Guided self assembly of InAs quantum dots on a cleaved facet
Mater. Res. Soc. Symp. Proc. 959 M-16-02 (2007)
E. Uccelli, D. Schuh, J. Bauer, M. Bichler, J. Finley, M. Grayson, G. Abstreiter, A. Fontcuberta i Morral | Novel one-dimensional states in a bent quantum hall junction
Intern. Journal of Modern Physics B 21, 1207-1208 (2007)
M. Grayson, L. Steinke, M. Huber, D. Schuh, M. Bichler, G. Abstreiter, L. Hoeppel, J. Smet, K. V. Klitzing, D. K. Maude | |
| Observation of extremely slow hole spin relaxation in self-assembled quantum dots
Phys. Rev. B 76, 241306 (2007)
D. Heiss, S. Schaeck, H. Huebl, M. Bichler, G. Abstreiter, J. J. Finley, D. V. Bulaev, D. Loss | Optical characterization of silicon on insulator photonic crystal nanocavities infiltrated with colloidal PbS quantum dots
Appl. Phys. Lett. 91, 233111 (2007)
D. F. Dorfner, T. Hürlimann, G. Abstreiter, J. J. Finley | pH Sensitivity of Gallium Arsenide (GaAs) Electrodes Functionalized with Methy-Mercaptobiphenyl Monolayers
J. Phys. Chem. C. 111, 12414-12419 (2007)
D. Gassull, S. M. Luber, A. Ulman, M. Grunze, M. Tornow, G. Abstreiter, M. Tanaka | Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule
Phys. Rev. B 74, 121305 (2006)
T. Nakaoka, E. C. Clark, H. J. Krenner, M. Sabathil, M. Bichler, Y. Arakawa, G. Abstreiter, J. J. Finley | Electrical Manipulation of Oligonucleotides Grafted to Charged Surfaces
Organic and Biomolecular Chemistry 4, 3448-4355 (2006)
U. Rant, K. Arinaga, S. Fujita, N. Yokoyama, G. Abstreiter, M. Tornow | Ferromagnetic Ge(Mn) nanostructures
Physica E 32, 422-425 (2006)
S. Ahlers, D. Bougeard, H. Riedl, G. Abstreiter, A. Trampert, W. Kipferl, M. Sperl, A. Bergmaier, G. Dollinger | Optically Probing Spin and Charge Interactions in a Tunable Artificial Molecule
Phys. Rev. Lett. 97, 76403 (2006)
H. J. Krenner, E. C. Clark, T. Nakaoka, M. Bichler, C. Scheurer, G. Abstreiter, J. J. Finley | The role of surface-charging during the co-adsorption of mercaptohexanol to DNA-layers on gold: direct observation of desorption and layer re-orientation
Langmuir 22, 5560-5562 (2006)
K. Arinaga, U. Rant, M. Tornow, S. Fujita, G. Abstreiter, N. Yokoyama | Aluminium arsenide cleaved-edge overgrown quantum wires
Appl. Phys. Lett. 87, 52101 (2005)
J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini | Aluminum arsenide cleaved-edge overgrown quantum wires
Appl. Phys. Lett. 87, 52101 (2005)
J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, V. Pellegrini | Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy
Journal of Appl. Phys. 98, 113517 (2005)
P. H. Tan, D. Bougeard, G. Abstreiter, K. Brunner | |
| Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule
Phys. Rev. Lett. 94, 57402 (2005)
H. J. Krenner, M. Sabathil, E. C. Clark, A. Kress, D. Schuh, M. Bichler, G. Abstreiter, J. J. Finley | Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer
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O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S. K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, H. Riechert | Investigation of cavity modes and direct observation of Purcell enhancement in 2D photonic crystal defect microcavities
Physica E 26, 351-355 (2005)
A. Kress, F. Hofbauer, N. Reinelt, H. J. Krenner, M. Bichler, D. Schuh, R. Meyer, G. Abstreiter, J. J. Finley | Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
Appl. Phys. Lett. 86, 192106 (2005)
F. Fischer, D. Schuh, M. Bichler, G. Abstreiter, M. Grayson, K. Neumaier | Negative differential conductance in cleaved edge overgrown surface superlattices
in: proc. of 27th International Conference on the Physics of Semiconductors 772, 900-901 (2005)
T. Feil, H. P. Tranitz, M. Reinwald, W. Wegscheider, M. Bichler, D. Schuh, G. Abstreiter, S. J. Allen | Raman scattering of folded acoustic phonons in self – assembled Si/Ge dot superlattices
Chinese Journal of light scattering 17, 312-314 (2005)
P. H. Tan, D. Bougeard, G. Abstreiter, K. Brunner | Recent advances in exciton-based quantum information processing in quantum dot nanostructures
New Journal of Physics 7, 184 (2005)
H. J. Krenner, S. Stufler, M. Sabathil, E. C. Clark, P. Ester, M. Bichler, G. Abstreiter, J. J. Finley, A. Zrenner | Recent advances in exciton-based quantum information processing in quantum dot nanostructures
New Journal of Physics 7, 184 (2005)
H. J. Krenner, S. Stufler, M. Sabathil, E. C. Clark, P. Ester, M. Bichler, G. Abstreiter, J. J. Finley, A. Zrenner | Silicon-on-insulator based thin-film resistor for chemical and biological sensor applications
Chem. Phys. Chem. 4, 1104-1106 (2005)
M. G. Nikolaides, S. Rauschenbach, S. Luber, K. Buchholz, M. Tornow, G. Abstreiter, A. R. Bausch | Anomalous-filling-factor-dependent nuclear-spin polarization in a 2D electron system
Phys. Rev. Lett. 92, 86802 (2004)
J. M. Smet, R. A. Deutschmann, F. Ertl, W. Wegscheider, G. Abstreiter, K. V. Klitzing | Dynamic electrical switching of DNA layers on a metal surface
Nano Lett. 4, 2441-2445 (2004)
U. Rant, K. Arinaga, S. Fujita, N. Yokoyama, G. Abstreiter, M. Tornow | |
| Fabrication of double quantum dots by combining afm and e-beam lithography
Physica E 21, 483-486 (2004)
M. C. Rogge, C. Fühner, U. F. Keyser, M. Bichler, G. Abstreiter, W. Wegscheider, R. J. Haug | Localization of fractionally charged quasi-particles
Science 305, 980-983 (2004)
J. Martin, S. Ilani, B. Verdene, J. Smet, V. Umansky, D. Mahalu, D. Schuh, G. Abstreiter, A. Yacoby | Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers
Semicond. Sci. Technol. 19, S342-S344 (2004)
G. Scarpa, P. Lugli, N. Ulbrich, G. Abstreiter, M. C. Amann, M. Manenti, F. Compagnone, A. D. Carlo | Observation of electrostatically released DNA from gold electrodes with controlled threshold voltages
J. Chem. Phys. 120, 5501-5504 (2004)
S. Takeishi, U. Rant, T. Fujiwara, K. Buchholz, T. Usuki, K. Arinaga, K. Takemoto, Y. Yamaguchi, M. Tornow, S. Fujita, G. Abstreiter, N. Yokoyama | Optically programmable electron spin memory using semiconductor quantum dots
Nature 432, 81-84 (2004)
M. Kroutvar, Y. Ducommun, D. Heiss, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley | Photoluminescence of one-dimensional electron gases in cleaved-edge overgrowth quantum wires
phys. stat. sol. (b) 241, No. 5, 1041-1045 (2004)
C. Kristukat, A. R. Goni, M. Bichler, W. Wegscheider, G. Abstreiter, C. Thomsen | Quantum Hall effect in a two-dimensional electron system bent by 90º
Physica E 22, 181-184 (2004)
M. Grayson, D. Schuh, M. Bichler, M. Huber, G. Abstreiter, L. Hoeppel, J. Smet, K. V. Klitzing | Quantum-confined Stark shifts of charged exciton complexes in quantum dots
Phys. Rev. B 70, 201308 (2004)
J. J. Finley, M. Sabathil, P. Vogl, G. Abstreiter, R. Oulton, A. I. Tartakovskii, D. J. Mowbray, S. Skolnick, S. L. Liew, A. G. Cullis, M. Hopkinson | Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices
Appl. Phys. Lett. 84, 2632-2634 (2004)
P. H. Tan, D. Bougeard, G. Abstreiter, K. Brunner | Redistribution dynamics of optically generated charges in In(Ga)As/GaAs self-assembled quantum dots
Appl. Phys. Lett. 85, 2592-2594 (2004)
Y. Ducommun, M. Kroutvar, M. Reimer, M. Bichler, D. Schuh, G. Abstreiter, J. J. Finley | Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots
Physica E 21, 312-316 (2004)
D. Bougeard, P. H. Tan, M. Sabathil, P. Vogl, G. Abstreiter, K. Brunner | |
| Structural properties of oligonucleotide monolayers on gold surfaces probed by fluorescence investigations
Langmuir 20, 10086-10092 (2004)
U. Rant, K. Arinaga, S. Fujita, N. Yokoyama, G. Abstreiter, M. Tornow | Transport in weakly and strongly modulated two-dimensional electron systems realized by cleaved-edge-overgrowth
phys. stat. sol. 1, 2111 (2004)
T. Feil, R. A. Deutschmann, W. Wegscheider, M. Rother, D. Schuh, M. Bichler, G. Abstreiter, B. Rieder, J. Keller | Anisotropic high-mobility quantum Hall transport: two-dimensional electrons subject to few millikelvins and misoriented substrates
in: Physics of Semiconductors 2002, Institute of Physics Conference Series 171, eds.: A. R. Long, and J. H. Davies, Institute of Physics Publishing Bristol, E2.2 (2003)
F. Ertl, O. Jaeger, R. A. Deutschmann, M. Bichler, G. Abstreiter, E. Schuberth, C. Probst, W. Wegscheider | Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots
Appl. Phys. Lett. 83, 1163-1165 (2003)
M. C. Rogge, C. Fühner, U. F. Keyser, R. J. Haug, M. Bichler, G. Abstreiter, W. Wegscheider | Electrically tunable mid-infrared electroluminescence from graded cascade structures
Appl. Phys. Lett. 83, 3015-3017 (2003)
Y. B. Vasilyev, V. A. Solov`ev, B. Y. Meltser, A. N. Semenov, S. V. Ivanov, P. S. Kop`ev, N. Ulbrich, G. Abstreiter, M. C. Amann, S. Schmult, W. Wegscheider | Femtosecond buildup of screening and collective effects in photoexcited GaAs: How bare charges get dressed
in: Physics of Semiconductors 2002, Institute of Physics Conference Series 171, eds.: A.R. Long and J. H. Davies, Institute of Physics Publishing Bristio and Philadelphia, 93-100 (2003)
F. Tauser, R. Huber, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer | Kondo effect in a few-electron quantum ring
Phys. Rev. Lett. 90, 196601-1 (2003)
U. F. Keyser, C. Fühner, S. Borck, R. J. Haug, M. Bichler, G. Abstreiter, W. Wegscheider | Local structure of Ge/Si nanostructures: uniqueness of XAFS spectroscopy
Nuclear Instruments and Methods, 199, 174-178 (2003)
A. V. Kolobov, H. Oyanagi, A. Frenkel, I. Robinson, J. Cross, S. Wei, G. Abstreiter, Y. Maeda, A. Shklyaev, M. Ichikawa, S. Yamasaki, K. Tanaka | Low-loss GaInAs-based waveguides for high-performance 5.5 mu m InP-based quantum cascade lasers
IEE Proceedings-Optoelectronics 150, 284-287 (2003)
G. Scarpa, N. Ulbrich, G. Böhm, G. Abstreiter, M. C. Amann | Mid-infrared electroluminescence from device with changeable electron-hole distance
Electronics Lett. 39, 108-110 (2003)
Y. B. Vasilyev, V. A. Solov`ev, B. Y. Meltser, A. N. Semenov, S. V. Ivanov, P. S. Kop`ev, N. Ulbrich, G. Abstreiter, M. C. Amann | Midinfrared intraband electroluminescence from AllnAs quantum dots
Appl. Phys. Lett. 83, 1530-1532 (2003)
N. Ulbrich, J. Bauer, G. Scarpa, R. Boy, D. Schuh, G. Abstreiter, S. Schmult, W. Wegscheider | |
| Momentum resolved tunnel spectroscopy of integer quantum Hall edges: A tool for measuring
ICPS-26 Proceedings, Institute of Physics Conference Series Number 171, M2.3 (2003)
M. Grayson, M. Rother, W. Biberacher, W. Wegscheider, M. Bichler and G. Abstreiter | Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures
Appl. Phys. Lett. 83, 5371-5373 (2003)
I. Bormann, K. Brunner, S. Hackenbuchner, G. Abstreiter, S. Schmult, W. Wegscheider | Prospects of quantum cascade lasers with GaInAs Waveguides
Adv. in Solid State Phys. 43, 301-312 (2003)
N. Ulbrich, G. Scarpa, G. Abstreiter, M. C. Amann | Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
Superlattices and Microstructures 33, 271-278 (2003)
V. T. Dolgopolov, E. V. Deviatov, A. A. Shashkin, U. Wieser, U. Kunze, G. Abstreiter, K. Brunner | Ultrafast formation of many-particle interactions in a photoexcited electron-hole plasma
Proceedings of SPIE 4992, 130-137 (2003)
R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer | Wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots
Appl. Phys. Lett. 83, 443-445 (2003)
M. Kroutvar, Y. Ducommun, J. J. Finley, M. Bichler, G. Abstreiter, A. Zrenner | Aharonov-Bohm oscillations of a tuneable quantum ring
Sem. Science and Technology 17, L22-L24 (2002)
U. F. Keyser, S. Borck, R. J. Haug, M. Bichler, G. Abstreiter, W. Wegscheider | Effect of the interface on the local structure of Ge-Si nanostructures
J. Vac. Sci. Technol. A 20, 1116-1119 (2002)
A. V. Kolobov, H. Oyanagi, K. Brunner, G. Abstreiter, Y. Maeda, A. A. Shklyaev, S. Yamasaki, M. Ichikawa, K. Tanaka | Efficient light emission at 1.54 µm from Er in Si excited by hot electron injection through thin suboxide layers
J. of Appl. Phys. 91, 9764-9771 (2002)
M. Markmann, A. Sticht, F. Bobe, G. Zandler, K. Brunner, G. Abstreiter, E. Müller | Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density
Phys. Chem. Chem. Physics 4, 785-790 (2002)
K. Adlkofer, E. Duijs, F. Findeis, A. Zrenner, E. Sackmann, G. Abstreiter, M. Tanaka | Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor
Nature 415, 281-286 (2002)
J. H. Smet, R. A. Deutschmann, F. Ertl, W. Wegscheider, G. Abstreiter, K. V. Klitzing | |
| High-performance 5.5µm quantum cascade lasers with high-reflection coating
IEE Proc.-Optoelectron. 149, 201-205 (2002)
G. Scarpa, N. Ulbrich, J. Roßkopf, G. Böhm, G. Abstreiter, M. C. Amann | Intersubband staircase laser
Appl. Phys. Lett. 80, 4312-4314 (2002)
N. Ulbrich, G. Scarpa, G. Böhm, G. Abstreiter, M. C. Amann | Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures
Applied Physics Letters 80 (2002)
I. Bormann, K. Brunner, S. Hackenbuchner, G. Zandler, G. Abstreiter, S. S. Wegscheider | Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces
Phys. Rev. B 65, 85314 (2002)
M. Betz, G. Göger, A. Leitenstorfer, M. Bichler, G. Abstreiter, W. Wegscheider | Optically detected single-electron charging in a quantum dot
Physica E 13, 95-100 (2002)
A. Zrenner, F. Findeis, M. Baier, M. Bichler, G. Abstreiter, U. Hohenester, E. Molinari | Silicon/silicon suboxide heterostructures grown by molecular beam epitaxy
Materials Science and Engineering B 89, 274-278 (2002)
A. Sticht, M. Markmann, K. Brunner, G. Abstreiter, E. Müller | Structural and optical properties of vertically correlated Ge island layers grown at low temperatures
Materials Science and Engineering B 89, 54-57 (2002)
M. Herbst, C. Schramm, K. Brunner, T. Asperger, H. Riedl, G. Abstreiter, A. Vörckel, H. Kurz, E. Müller | Femtosecond buildup of Coulomb screening in photoexcited GaAs probed via ultrabroadband THz spectroscopy
Journal of Luminescence 94-95, 555-558 (2001)
R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer | High-temperature (T> 470 K) pulsed operation of 5.5µm quantum cascade lasers with high-reflection coating
Electronics Letters 37, 1341-1342 (2001)
N. Ulbrich, G. Scarpa, A. Sigl, J. Roßkopf, G. Böhm, G. Abstreiter, M. C. Amann | How many-particle interactions develop after ultfrafast excitation of an electron-hole plasma
Nature 414, 286-289 (2001)
R. Huber, F. Tauser, A. Brodschelm, M. Bichler, G. Abstreiter, A. Leitenstorfer | Influence of thiol coupling on photoluminescence of near surface InAs quantum dots
phys. stat. sol. (b) 224, 871-875 (2001)
E. F. Duijs, F. Findeis, R. A. Deutschmann, M. Bichler, A. Zrenner, G. Abstreiter, K. Adlkofer, M. Tanaka, E. Sackmann | |
| Ising feromagnetism and domain morphology in the fractional quantum hall regime
Phys. Rev. Lett. 86, 2412-2415 (2001)
J. H. Smet, R. A. Deutschmann, W. Wegscheider, G. Abstreiter, K. V. Klitzing | Local structure of Ge/Si (100) self-assembled quantum dots
Journal of China University of Science and Technology 31, 282-288 (2001)
A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, K. Tanaka | Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots
Appl. Phys. Lett. 78, 451-453 (2001)
A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, K. Tanaka | Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots studied by fluorescent X-ray absorption fine structure
Proc. of the 6th International Symposium on Advanced Physical Fields: Growth of Well-defined Nanostructures (2001)
A. V. Kolobov, H. Oyanagi, K. Brunner, P. Schittenhelm, G. Abstreiter, K. Tanaka | Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs
Physica E 10, 57-61 (2001)
R. Meisels, K. Dybko, F. Ziouzia, F. Kuchar, R. Deutschmann, G. Abstreiter, G. Hein, K. Pierz | Self-Ordering of Ge islands on Si substrates mediated by local strain fields
phys. stat. sol. (b) 224, 531-535 (2001)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst | Electronic inelastic light scattering in a periodic ?-doping GaAs multiple quantum well structure
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
C. Kristukat, A. R. Goni, S. Rutzinger, W. Wegscheider, G. Abstreiter, C. Thomsen | Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers
Jpn. J. Appl. Phys. 39, 1727-1729 (2000)
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M. C. Amann | Low-resistance InGa(Al)As tunnel junctions for long-wavelength vertical-cavity surface-emitting lasers
IEEE Photonics Technology Letters 39, 1727 (2000)
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, M. C. Amann | Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE
Thin solid films 369, 398-401 (2000)
M. Markmann, E. Neufeld, K. Brunner, G. Abstreiter, C. Buchal | Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates
Physica E 7, 881-886 (2000)
K. Brunner, J. Zhu, C. Miesner, G. Abstreiter, O. Kienzle, F. Ernst | |
| Semiclassical origin of the 2D metallic state in high mobility Si-MOS and Si/SiGe structures
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000)
G. Brunthaler, A. Prinz, G. Pillwein, G. Bauer, K. Brunner, G. Abstreiter, T. Dietl, V. M. Pudalov | Step bunching and correlated SiGe nanostructures on (113) Si
Thin Solid Films 369, 39-42 (2000)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst | Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices
J. Vac. Sci. Technol. B 18, 2187 (2000)
J. Stangl, T. Roch, V. Holý, M. Pinczolits, G. Springholz, G. Bauer, I. Kegel, T. H. Metzger, J. Zhu, K. Brunner, G. Abstreiter, D. Smilgies | Characteristics of surface and waveguide emitting SiGe:Er:O diodes
Journal of Luminescence 80, 321-327 (1999)
A. Sticht, E. Neufeld, A. Luigart, K. Brunner, G. Abstreiter, H. Bay | Correlated SiGe wires shaped by regular step bunches on miscut Si (113) substrates
Phys. Rev. B 60, 10935 (1999)
J. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst, M. Rühle | Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures
Phys. Rev. B 59, 13242-13250 (1999)
C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. Schäffler | Mechanical nanomanipulation of single strain-induced semiconductor quantum dots
Appl. Phys. Lett. 75, 358-360 (1999)
C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto | Pauli-blocking imaging of single strain-induced semiconductor quantum dots
Appl. Phys. Lett. 74, 3200-3202 (1999)
C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto | Regular step bunching and ordering of Ge Islands on vicinal Si surfaces
Proc. of ICPS 24, Ed. D. Gershoni World Scientific, p. 61 ff (1999)
K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst | Spatially resolved spectroscopy of single and coupled quantum dots
Jpn. J. Appl. Phys. 38, 449-454 (1999)
G. Abstreiter, M. Bichler, M. Markmann, G. Schedelbeck, W. Wegscheider, A. Zrenner | Chemical beam epitaxy of integrated 1.55 µm lasers on exact and misoriented (1 0 0)-InP substrates
Journal of Crystal Growth 188, 275-280 (1998)
A. Nutsch, N. Döhr, H. Kratzer, R. Lukas, B. Torabi, G. Tränkle, G. Abstreiter, G. Weimann | |
| Growth and characterization of strained Si1-xGex multi-quantum-well waveguide photodetectors on (1 1 0) Si for 1.3 and 1.55 µm
Physica E 2, 753-757 (1998)
K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele | Highly regular self-organization of step bunches during growth of SiGe on Si (113)
Appl. Phys. Lett. Vol 73 (1998)
A. A. Darhuber, J. Zhu, V. Holy, J. Stangl, P. Mikulik, K. Brunner, G. Abstreiter, G. Bauer | Lateral ordering of self-assembled Ge islands
Thin Solid Films 336, 252-255 (1998)
J. H. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst | Luminescence from erbium- and oxygen-doped SiGe grown by molecular beam epitaxy
Thin Solid Films 321, 219-222 (1998)
E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter, H. Bay, C. Buchal, H. Holzbrecher | Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates
Thin Solid Films 321, 245-250 (1998)
K. Brunner, H. Dobler, G. Abstreiter, H. Schäfer, B. Lustig | Raman scattering in annealed isotopic (70Ge)n(74Ge)m superlattices
Physica E 2 291-294 (1998)
E. Silveira, W. Dondl, G. Abstreiter, E. E. Haller | Self-Assembled Ge-Dots: Growth, Characterization, Ordering and Applications
J. Vac.Sci. Technol. B 16 (1998)
P. Schittenhelm, C. Engel, F. Findeis, G. Abstreiter, A. A. Darhuber, A. O. Kosogov, P. Werner | Size distribution of coherently strained InAs quantum dots
J. Appl. Phys. 84, 4268-4272 (1998)
K. H. Schmidt, G. Medeiros-Ribeiro, U. Kunze, G. Abstreiter, M. Petroff | Spatially resolved optical spectroscopy on natural quantum dots
Applied Surface Science 123/124, 356-365 (1998)
A. Zrenner, A. Schaller, M. Markmann, M. Hagn, M. Arzberger, D. Henry, G. Abstreiter, G. Böhm, G. Weimann | Spectroscopy of excitonic Zeeman levels in single quantum dots
Physica E 2, 609-613 (1998)
A. Schaller, A. Zrenner, G. Abstreiter, G. Böhm | Spin splitting in GaAs quantum wire structures
PHYSICA E 2 1-4 929-932 (1998)
E. Silveira, M. K. Kelly, C. E. Nebel, G. Bohm, G. Abstreiter, M. Stutzmann | |
| Structural characterization of self-assembled Ge dot multilayers by x-ray diffraction and reflectivity methods
Physica E, 2. 789-793 (1998)
A. A. Darhuber, V. Holy, P. Schittenhelm, J. Stangl, I. Kegel, Z. Kovats, T. H. Metzger, G. Bauer, G. Abstreiter, G. Grübel | Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth
Phys. Rev. Letters 79 (10), 1917-1920 (1997)
W. Wegscheider, G. Schedelbeck, G. Abstreiter, M. Rother, M. Bichler | Defect-free strain relaxation in locally MBE-grown SiGe-heterostructures
Thin Solid Films 294, 27-32 (1997)
T. Rupp, F. Kaesen, W. Hansch, E. Hammerl, D. J. Gravesteijn, R. Schorer, E. Silveira, G. Abstreiter, I. Eisele | Direct and indirect magnetoexcitons in InGaAs/GaAs coupled quantum wells: experiment and theory
12th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany, July 28-Aug.2, 1996. Vol 2, 689-692 (1997)
L. V. Butov, A. B. Dzyubenko, A. L. Yablonskii, A. Zrenner, G. Abstreiter, A. V. Petinova, K. Eberl | Erbium-silicon light emitting diodes grown by molecular beam epitaxy: optical properties
Thin Solid Films 294, 220-222 (1997)
J. Stimmer, A. Reittinger, E. Neufeld, G. Abstreiter, H. Holzbrecher, U. Breuer, C. Buchal | Ge self-diffusion in isotopic (70Ge)n(74Ge)m superlattices: A Raman study
Phys. Rev. B 56 (4), 2062-2069 (1997)
E. Silveira, W. Dondl, G. Abstreiter, E. E. Haller | Growth of self-assembled homogeneous SiGe dots on Si(100)
Thin Solid Films 294, 291-295 (1997)
P. Schittenhelm, G. Abstreiter, A. Darhuber, G. Bauer, P. Werner, A. Kosogov | Anomalous Transport of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
Surface Science 361/362, 243-246 (1996)
L. V. Butov, A. Zrenner, M. Hagn, G. Abstreiter, G. Böhm, G. Weimann | Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells
Phys. Rev. B 54 (3), 1922-1927 (1996)
J. Olajos, J. Engwall, H. G. Grimmeiss, M. Gail, G. Abstreiter, H. Presting, H. Kibbel | Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy
Appl. Phys. Lett. 68 (23), 3290-3292 (1996)
J. Stimmer, A. Reittinger, J. Nuetzel, G. Abstreiter, H. Holzbrecher, C. Buchal | Electronic excitations in quantum wires and dots
Physica B 227, 10-Jun (1996)
G. Abstreiter, R. Strenz, G. Schedelbeck, E. Silveira | |
| Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing
Appl. Phys. Lett. 68 (21), 3025-3027 (1996)
M. Holzmann, P. Baumgartner, C. Engel, J. Nuetzel, G. Abstreiter, F. Schäffler | Far-infrared-study of shallow etched quantum wires on high mobility GaAs/AlGaAs heterostructures and quantum-wells
Solid-State Electronics 40 (1-8) (1996)
V. Roßkopf, P. Auer, E. Gornik, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann | Growth and characterization of self-assembled Ge-rich islands on Si
Semicond. Sci. Technol. 11, 1521-1528 (1996)
G. Abstreiter, P. Schittenhelm, C. Engel, E. Silveira, A. Zrenner, D. Meertens, W. Jäger | Growth conditions of Erbium-Oxygen-doped Silicon grown by MBE
Mat. Res. Soc. Symp. Proc. Vol. 422 422, 15 (1996)
J. Stimmer, A. Reittinger, G. Abstreiter, H. Holzbrecher, C. Buchal | Linewidth and finestructure of optical spectra from single quantum dots
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 2, 1433-1436, Berlin, Germany, July 21-26 (1996)
A. Zrenner, M. Hagn, A. Schaller, G. Abstreiter, G. Böhm, G. Weimann | Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures
Surface Science 361/362, 673-676 (1996)
M. Holzmann, D. Többen, P. Baumgartner, G. Abstreiter, A. Kriele, H. Lorenz, F. Schäffler | Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena
Solid State Electronics Vol. 40 (1-8) 40 (1-8), 405-408 (1996)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler | Resonant inelastic light scattering by electronic excitations in tunable quantum wire structures
Surface Science 361/362, 783-787 (1996)
G. Schedelbeck, E. Silveira, R. Strenz, U. Bockelmann, G. Abstreiter, G. Böhm, G. Weimann | Room temperature electroluminescence of Erbium-Oxygen-doped Silicon diodes grown by molecular beam epitaxy
Proc. of 23rd Int. Conf. on the Physics of Semiconductors 4, 3945-3048, Berlin, Germany, July 21-26 (1996)
J. Stimmer, A. Reittinger, C. Wetterer, A. Zrenner, G. Abstreiter, H. Holzbrecher, C. Buchal | Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE
Applied Surface Science 102, 327-330 (1996)
M. Jaumann, J. Stimmer, P. Schittenhelm, J. Nuetzel, G. Abstreiter, E. Neufeld, B. Holländer, C. Buchal | Structure and luminescence of SiGe-Si quantum dots and wires from local epitaxy
Proc. of 11th European Congress on Electron Microscopy (1996)
D. Meertens, W. Jäger, K. Urban, J. Brunner, P. Schittenhelm, G. Abstreiter, J. Gondermann, B. Hadam, H. Kurz, T. S. Rupp, H. Gossner, I. Eisele | |
| Time resolved spectroscopy of single quantum dots: Fermi gas of excitons?
Phys. Rev. Lett. 76 (1996)
U. Bockelmann, P. Roussignol, A. Filoramo, W. Heller, G. Abstreiter, K. Brunner, G. Böhm, G. Weimann | Angular dispersion of confined optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy
Solid State Communications 93 (1995)
M. Zunke, R. Schorer, G. Abstreiter, W. Klein, G. Weimann, M. P. Chamberlain | Antidot superlattices in two-dimensional hole gases confined in strained germanium layers
Semicond. Sci. Technol. 10, 1413-1417 (1995)
D. Többen, M. Holzmann, G. Abstreiter, A. Kriele, H. Lorenz, J. P. Kotthaus, F. Schäffler, Y. H. Xie, P. J. Silvermann, D. Monroe | Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure
Semicond. Sci. Technol. 10, 711-714 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler | Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells
Phys. Rev. B 52 (16), 12 153-12 157 (1995)
L. V. Butov, A. Zrenner, G. Abstreiter, A. V. Petinova, K. Eberl | Fabrication and characterization of locally grown SiGe wires and dots
Mat. Sci. and Technol. 11 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele | Fabrication and Characterization of Si/SiGe Nanometer Structures
Microelectronic Engineering 27, 83-86 (1995)
J. Gondermann, B. Spangenberg, T. Köster, B. Hadam, H. G. Roskos, H. Kurz, J. Brunner, P. Schittenhelm, G. Abstreiter, H. Gossner, I. Eisele | Fabrication of lateral npn-phototransistors with high gain and sub-µm spatial resolution
Appl. Phys. Lett. 66 (1995)
P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Weimann | Germanium70Ge/74Ge isotope heterostructures: An approach to self-diffusion studies
Phys. Rev. B 51 (1995)
H. D. Fuchs, W. Walukiewicz, E. E. Haller, W. Dondl, R. Schorer, G. Abstreiter, A. I. Rudnev, A. V. Tikhomirov, V. I. Ozhogin | In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation
Appl. Phys. Lett. 67 (11), 1579-1581 (1995)
D. Többen, D. K. D. Vries, A. D. Wieck, M. Holzmann, G. Abstreiter, F. Schäffler | Local epitaxy of Si/SiGe wires and dots
J. of Cryst. Growth 157, 270-275 (1995)
J. Brunner, W. Jung, P. Schittenhelm, M. Gail, G. Abstreiter, J. Gonderman, B. Hadam, T. Koester, B. Spangenberg, H. G. Roskos, H. Kurz, H. Gossner, I. Eisele | |
| Magnetic-Field induced Intersubband Resonances in AlGaAs/GaAs Quantum Wells
Europhysics Letters 30, 111-116 (1995)
C. Gauer, A. Wixforth, J. P. Kotthaus, G. Abstreiter, G. Weimann, W. Schlapp | Nanometer resolved photocurrent and local minority carrier transport in GaAs p-n junctions
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 249 (1995)
G. Zandler, G. Kolb, K. Karrai, G. Abstreiter, P. Vogl | One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures
Appl. Phys. Lett. 66 (1995)
M. Holzmann, D. Többen, G. Abstreiter, M. Wendel, H. Lorenz, J. P. Kotthaus, F. Schäffler | Optical anisotropy of Si/Ge superlattices: Resonant Raman scattering in in-plane geometry
Solid State Communications 93 (1995)
R. Schorer, G. Abstreiter, H. Kibbel, H. Presting, C. Tserbak, G. Theodorou | Optical near-field induced current microscopy
Ultramicroscopy 61, 299-304 (1995)
K. Karraï, G. Kolb, G. Abstreiter, A. Schmeller | Optical study of diffusion limitation in MBE growth of SiGe quantum wells
Semicond. Sci. Technol. 10, 319-325 (1995)
M. Gail, J. Brunner, J. Nuetzel, G. Abstreiter, J. Engvall, J. Olajos, H. Grimmeiss | Optically detected cyclotron resonance on GaAs/AlxGaAs1-x quantum wells and quantum wires
Phys. Rev. B 52 (15), 11 313-11 318 (1995)
D. M. Hofmann, M. Drechsler, C. Wetzel, B. K. Meyer, F. Hirler, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann | Photodetector with subwavelength spatial resolution
Ultramicroscopy 57, 208-211 (1995)
G. Kolb, C. Obermüller, K. Karraï, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Resonant inelastic light scattering by plasmons at the crossover from two- to one-dimensional behavior
Solid State Communications 93 (1995)
G. Schedelbeck, R. Strenz, G. Abstreiter, G. Böhm, G. Weimann | Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy
Journal of Crystal Growth 157, 15-20 (1995)
H. Presting, T. Zinke, O. Brux, G. Abstreiter, H. Kibbel, M. Jaros | Room-temperature photoluminescence of GemSinGem structures
Appl. Phys. Lett. 66 (22), 2978-2980 (1995)
M. Gail, G. Abstreiter, J. Olajos, J. Engvall, H. Grimmeiss, H. Kibbel, H. Presting | |
| SiGe Quantum Wells on (110) Si Grown by Molecular Beam Epitaxy
J. of Crystal Growth 150, 1050-1054 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl | SiGe quantum wells on (110) Si grown molecular beam epitaxy
J. Crystal Growth 150, 1050 (1995)
J. Brunner, M. Gail, G. Abstreiter, P. Vogl | Strained Si1-xGex multi-quantum well waveguide structures on (110) Si
Appl. Phys. Lett. 66 (17), 2226-2228 (1995)
K. Bernhard-Höfer, A. Zrenner, J. Brunner, G. Abstreiter, F. Wittmann, I. Eisele | Transport properties of a Si/SiGe quantum point-contact in the presence of impurities
Phys. Rev. B 52 (1995)
D. Többen, D. A. Wharam, G. Abstreiter, J. P. Kotthaus, F. Schäffler | Angular dispersion of optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 2, 947-954, Vancouver, Canada, August 15-19 (1994)
R. Schorer, M. Zunke, G. Abstreiter, W. Klein, G. Weimann, M. P. Chamberlain | Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
Phys. Rev. Lett. 73 (2), 304-307 (1994)
L. V. Butov, A. Zrenner, G. Abstreiter, G. Böhm, G. Weimann | Confined plasmons in shallow etched quantum wires
Semicond. Sci. Technol. 9, 399-403 (1994)
R. Strenz, V. Roßkopf, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Effects of microwave modulation and cyclotron resonance on the luminescence of GaAs/AlGaAs quantum wells and wires
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 2, 1659-1662, Vancouver, Canada, August 15-19 (1994)
D. M. Hofmann, M. Drechsler, C. Wetzel, P. Emanuelsson, B. K. Meyer, F. Hirler, G. Abstreiter, G. Tränkle, G. Weimann | Electron transport through antidot superlattices in Si/Si0.7Ge0.3 heterostructures
Phys. Rev. B 50 (1994)
D. Többen, M. Holzmann, S. Kühn, H. Lorenz, G. Abstreiter, J. P. Kotthaus, F. Schäffler | Evidence for the exciton condensation in coupled quantum wells at high magnetic fields
Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 328-331 (1994)
L. V. Butov, A. Zrenner, G. Abstreiter, G. Böhm, G. Weimann | Fabrication of in-plane-gate transistor structures by focused-laser-beam-induced Zn-doping of modulation-doped GaAs/AlGaAs quantum wells
Appl. Phys. Lett. 64 (1994)
P. Baumgartner, K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | |
| Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure
J. Appl. Phys. 76 (6), 3917-3919 (1994)
M. Holzmann, D. Többen, G. Abstreiter, F. Schäffler | High Mobility 2D Hole Gases in Strained Ge Channels in Si Substrates Studied by Magnetotransport and Cyclotron Resonance
Solid State Electronics 37, Vol. 37 (1994)
C. M. Engelhardt, D. Többen, M. Aschauer, F. Schäffler, G. Abstreiter, E. Gornik | Information on the confinement potential in GaAs/AlGaAs wires from magneto- luminescence experiments
Surface Science 305, 591-596 (1994)
F. Hirler, R. Strenz, R. Küchler, G. Abstreiter, G. Böhm, G. Weimann | In-plane Raman scattering of (001)-Si/Ge superlattices: Theory and experiment
Phys. Rev. B 49 (1994)
R. Schorer, G. Abstreiter, S. D. Gironcoli, E. Molinari, H. Kibbel, H. Presting | Lateral npn-phototransistors with high gain and high spatial resolution fabricated by focused laser beam induced Zn doping of GaAs/AlGaAs quantum wells
Proc. of the 21st Int. Conf. on Compound Semiconductors, San Diego, USA, September 18 - 22, 1994. Ed.: Herb Goronkin and Umesh Mishra. IOP Publishing Ltd., 1995. 591-596. (1994)
P. Baumgartner, C. Engel, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Magneto-optics of two-dimensional hole systems in the extreme quantum limit
Phys. Rev. B 49 (19), 14054-14057 (1994)
L. V. Butov, A. Zrenner, M. Shayegan, G. Abstreiter, H. C. Manoharan | Magnetotransport of Electrons in Arrays of Antidots Imposed upon Si/Si0.7Ge0.3 Heterostructures
Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 480-483 (1994)
D. Többen, M. Holzmann, S. Kühn, H. Lorenz, G. Abstreiter, J. P. Kotthaus, F. Schäffler | Nanometer-resolved photocurrent and local minority carrier transport in GaAs P-N junctions
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 1, 249-252, Vancouver, Canada, August 15-19 (1994)
G. Zandler, G. Kolb, K. Karraï, G. Abstreiter, P. Vogl | Photo- and electroluminescence in short-period Si/Ge superlattice structures
Semicond. Sci. Technol. 9, 2011-2016 (1994)
J. Olajos, J. Engvall, H. G. Grimmeiss, U. Menczigar, M. Gail, G. Abstreiter, H. Kibbel, E. Kasper, H. Presting | Photoluminescence and two-photon absorption of the biexciton state in a GaAs/AlGaAs single quantum dot
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 3, 1823-1826, Vancouver, Canada, August 15-19 (1994)
K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Quantum Dots Formed by Interface Fluctuations in AlAs/GaAs Coupled Quantum Well Structures
Phys. Rev. Lett. 72 (21), 3382-3385 (1994)
A. Zrenner, L. V. Butov, M. Hagn, G. Abstreiter, G. Böhm, G. Weimann | |
| Raman Scattering by Optical Phonons in Isotopic 70(Ge)n74(Ge)n Superlattices
Phys. Rev. Lett. 72 (1994)
J. Spitzer, T. Ruf, M. Cardona, W. Dondl, R. Schorer, G. Abstreiter, E. E. Haller | Resonant inelastic light scattering by inter- and intrasubband excitations in shallow etched quantum dots and wires
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 3, 1831-1834, Vancouver, Canada, August 15-19 (1994)
R. Strenz, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Resonant-Raman-scattering study on short-period Si/Ge superlattices
Phys. Rev. B50 (1994)
R. Schorer, G. Abstreiter, H. Kibbel, H. Presting | Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure
Phys. Rev. Lett. 73 (1994)
K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities
Appl. Phys. Lett. 64 (1994)
K. Brunner, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Single-Particle Excitations in Quasi-Zero- and Quasi-One-Dimensional Electron Systems
Phys. Rev. Lett. 73 (1994)
R. Strenz, U. Bockelmann, F. Hirler, G. Abstreiter, G. Böhm, G. Weimann | Vibrational Properties of Isotopic 70Gen74Gen Superlattices
Proc. of 22nd Int. Conf. on the Physics of Semiconductors 2, 971-974, Vancouver, Canada, August 15-19 (1994)
J. Spitzer, T. Ruf, M. Cardona, C. Grein, W. Dondl, R. Schorer, G. Abstreiter, E. E. Haller | Vibrational Properties of Si/Ge Superlattices: Theory and in-plane Raman Scattering Experiments
Solid State Electronics 37, Vol. 37 (1994)
R. Schorer, G. Abstreiter, S. D. Gironcoli, E. Molinari, H. Kibbel, E. Kasper | Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells
J. de Physique IV 3, Vol. 3 ,167-170 (1993)
L. V. Butov, A. Zrenner, G. Abstreiter, G. Böhm, G. Weimann | Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)n superlattices
Phys. Rev. B47 (1993)
U. Menczigar, G. Abstreiter, J. Olajos, H. Grimmeiss, H. Kibbel, H. Presting, E. Kasper | Enhanced Band-gap Luminescence in strain-symmetrized (Si)m/(Ge)n Superlattices
Mat. Res. Soc. Symp. Proc. 298, 33-44 (1993)
U. Menczigar, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper | |
| High mobility two-dimensional electron gases in Si/Si1-xGex heterostructures grown by MBE
J. of Crystal Growth 127, 421-424 (1993)
D. Többen, F. Schäffler, M. Besson, C. M. Engelhardt, A. Zrenner, G. Abstreiter, E. Gornik | High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices
Acta Physica Polonica A 84 (1993)
G. Bauer, E. Koppensteiner, P. Hamberger, J. Nuetzel, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper | Micro-Raman scattering in ultrathin layer superlattices: evidence of zone centre anisotropy of optical phonons
Phys. Rev. B47 (1993)
G. Scamarcio, M. Haines, G. Abstreiter, E. Molinari, S. Baroni, A. Fischer, K. Ploog | Photoluminescence from GaAs/AlGaAs quantum wires and quantum dots
J. de Physique IV 3, 107-114 (1993)
K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, G. Weimann | Photoluminescence lineshape of narrow n-type modulation-doped quantum wells
Semicond. Sci. Technol. 8, 88-91 (1993)
R. Küchler, G. Abstreiter, G. Böhm, G. Weimann | Properties of Sn/Ge superlattices
Semicond. Sci. Technol. 8, S6-S8 (1993)
G. Abstreiter, J. Olajos, R. Schorer, P. Vogl, W. Wegscheider | Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots
Semicond. Sci. Technol. 8, 617-621 (1993)
F. Hirler, R. Strenz, R. Küchler, G. Abstreiter, G. Böhm, J. Smoliner, G. Tränkle | Band-gap of strain-symmetrized, short-period Si/Ge superlattices
Phys. Rev. B 46 (1992)
J. Olajos, J. Engvall, H. G. Grimmeiss, U. Menczigar, G. Abstreiter, H. Kibbel, E. Kasper, H. Presting | Douple wavelength selective GaAs/AlGaAs infrared detector device
Appl. Phys. Lett. 60 (1992)
A. Köck, E. Gornik, G. Abstreiter, G. Böhm, M. Walther, G. Weimann | High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
Semicond. Sci. Technol. 7, 260-266 (1992)
F. Schäffler, D. Többen, H. J. Herzog, G. Abstreiter, B. Holländer | Luminescence Properties of GaAs Quantum Wells, Wires, Dots and Antidots
Optical Phenomena in Semiconductor Structures of Reduced Dimensions, Yountville, CA, USA, July 27-31, 1992. Eds.: D. J. Lockwood and A. Pinczuk Kluwer Academic Publishers, Dordrecht 1993. 327-335. (1992)
G. Abstreiter, G. Böhm, K. Brunner, F. Hirler, R. Strenz, G. Weimann | |
| Magneto-Luminescence and Magneto-Luminescence Excitation Spectroscopy in Strained Layer Heterostructures
Solid-State Science 101: High Magnetic Fields in Semiconductor Physics III., Berlin 1992. 514-518 (1992)
R. Küchler, P. Hiergeist, G. Abstreiter, J. P. Reithmaier, H. Riechert, R. Lösch | Observation of Interface Plasmon Modes in (GaAl)As Heterostructures by Raman Spectroscopy
Proc. of 21th Int. Conf. on the Physics of Semiconductors 1, 769-772, Beijing, China, August 10-14 (1992)
M. Haines, T. Egeler, G. Abstreiter, G. Böhm, G. Weimann | Optical characterization of GaAs/AlGaAs nanostructures fabricated by focussed laser beam induced thermal interdiffusion
Surface Science 267, 218-222 (1992)
K. Brunner, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle | Photoluminescence from a Single GaAs/AlGaAs Quantum Dot
Phys. Rev. Lett. 69 (1992)
K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. Böhm, G. Tränkle, G. Weimann | Photoluminescence studies of Si/Si1-xGex quantum wells and SimGen superlattices
Thin Solid Films, 222, 227-233 (1992)
U. Menczigar, J. Brunner, E. Friess, M. Gail, G. Abstreiter, H. Kibbel, H. Presting, E. Kasper | Silicon based heterostructures, quantum wells and superlattices
Proc. of 21th Int. Conf. on the Physics of Semiconductors 1, 827-834, Beijing, China, August 10-14 (1992)
G. Abstreiter, J. Brunner, F. Meier, U. Menczigar, J. Nuetzel, R. Schorer, D. Többen | Spatially direct and indirect optical transitions in GaAs/AlGaAs nanostructures of different dimensionalities
Proc. of 21th Int. Conf. on the Physics of Semiconductors 2, 1104-1107, Beijing, China, August 10-14 (1992)
R. Strenz, F. Hirler, R. Küchler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs quantum wires
Surface Science 263, 536-540 (1992)
F. Hirler, R. Küchler, R. Strenz, G. Abstreiter, G. Böhm, J. Smoliner, G. Tränkle | Temperature Distribution in Si-MOSFET's Studied by Micro Raman Spectroscopy
IEEE Transactions on Electron Devices 39 (1992)
R. Ostermeir, K. Brunner, G. Abstreiter, W. Weber | Zone Centre Anisotropy of Optical Phonons in Ultra-Thin Layer Superlattices Observed by Micro-Raman Spectroscopy
Proc. of 21th Int. Conf. on the Physics of Semiconductors 1, 863-866, Beijing, China, August 10-14 (1992)
G. Scamarcio, M. Haines, G. Abstreiter, E. Molinari, S. Baroni, K. Ploog | Comparison of Growth and Strain Relaxation of Si/Ge Superlattices under Compressive and Tensile Strain Field
Mat. Res. Soc. Symp. Proc. 220, 135-140 (1991)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer | |
| High Electron Mobility in Modulation-Doped Si/SiGe Quantum Well Structures
Appl. Phys. Lett. 59 (1991)
G. Schuberth, F. Schäffler, M. Besson, G. Abstreiter, E. Gornik | High Resolution Imaging of Twin Intersections in Si/Ge Superlattices on Ge (001) Substrates
Proc. of the 7th Int. Conf. on Microscopy of Semiconducting Materials, Oxford, March 25-28, 1991. IOP Publishing Ltd, 1991. 21-26. (1991)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer | Integrated wavelength-selective GaAs/AlGaAs multi-quantum-well detectors
Semicond. Sci. Technol. 6, C128-129 (1991)
A. Köck, E. Gornik, G. Abstreiter, G. Böhm, M. Walther, G. Weimann | Intersubband Absorption and Real Space Electron Transfer in GaAs Quantum Wells
Resonant Tunneling in Semiconductors: Physics and Applications. Eds.: L.L. Chang, E. E. Mendez and C. Tejedor.Plenum Press, N.Y., 1991. 505-513. (1991)
G. Abstreiter, M. Besson, R. Heinrich, A. Köck, W. Schlapp, G. Weimann, R. Zachai | Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells
Mat. Res. Soc. Symp. Proc. 220, 379-381 (1991)
H. Hertle, G. Schuberth, E. Gornik, G. Abstreiter, F. Schäffler | Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells
Appl. Phys. Lett. 59 (1991)
H. Hertle, G. Schuberth, E. Gornik, G. Abstreiter, F. Schäffler | Micro-Raman spectroscopy for large in-plane wave vector excitations in quantum-well structures
Light scattering in semiconductor structures and superlattices. Eds.: D. J. Lockwood and J. F. Young. Plenum Press, N.Y., 1991. 561-569. (1991)
G. Abstreiter, S. Beeck, T. Egeler, A. Huber | Optical Properties of Type I and Type II GaAs/AlGaAs Nanostructures
Physics of Nanostructures, 301-308, Proc. of SUSSP38, St. Andrews, July-August 1991 (1991)
K. Brunner, F. Hirler, G. Abstreiter, G. Böhm, G. Tränkle, G. Weimann | Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts
Appl. Phys. Lett. 58, 1007-1009 (1991)
F. U. Herrmann, S. Beeck, G. Abstreiter, C. Hanke, C. Hoyler, L. Korte | Resonant Tunneling of Holes in Si/Si1-xGex Quantum Well Structures
Mat. Res. Soc. Symp. Proc. 220, 409-411 (1991)
G. Schuberth, G. Abstreiter, E. Gornik, F. Schäffler, J. F. Luy | Resonant Tunneling of Holes in Si/SixGe1-x Quantum-Well Structures
Phys. Rev. B43 (1991)
G. Schuberth, G. Abstreiter, E. Gornik, F. Schäffler, J. F. Luy | |
| Strained layer heterostructures and superlattices based on group IV elements
Condensed Systems of Low-Dimensionality. Eds. J.L. Beeby, P. K. Bhattacharya, P. Ch. Gravelle, F. Koch and D. J. Lockwood. Plenum Press, N.Y., 1991. 471-480. (1991)
G. Abstreiter, K. Eberl, E. Friess, U. Menczigar, W. Wegscheider | Symmetry Properties of Short Period (001) Si/Ge Superlattices
Superlattices and Microstructures, 9 (1991)
K. Eberl, W. Wegscheider, G. Abstreiter, H. Cerva, H. Oppolzer | Anisotropic Plasmon Dispersion in a Lateral Quantum-Wire Superlattice
Phys. Rev. Lett. 65 (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, P. Grambow | Band Offset in Elastically Strained InGaAs/GaAs Multiple Quantum Wells determined by Optical Absorption and Electronic Raman Scattering
Appl. Phys. Lett. 56 (1990)
J. P. Reithmaier, R. Höger, H. Riechert, A. Heberle, G. Abstreiter, G. Weimann | Grating Coupler Effects on Inelastic Light Scattering by Plasmons in Micro Structured GaAs MQW Systems
Surface Science 229, 391-393 (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp | High Resolution Micro Raman Spectroscopy of GaAs/AlGaAs Quantum Well Lasers in the Low Power Range
Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, September 24-27, 1990. IOP Publishing Ltd., 1990. 561-566. (1990)
S. Beeck, F. U. Herrmann, G. Abstreiter, C. Hanke, L. Korte | Highly Strained ?-Sn/Ge Superlattices - New Man-made Semiconductors
Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990. Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1685-1688 (1990)
W. Wegscheider, K. Eberl, U. Menczigar, J. Olajos, G. Abstreiter, P. Vogl | Inelastic Light Scattering by Electrons in Microstructured Quantum Wells
Solid State Sciences 97: Localization and Confinement of Electrons in Semiconductors, Springer-Verlag, Berlin 1990 (1990)
G. Abstreiter, T. Egeler | Local Temperature Distribution in Si-MOSFET`s Studied by Micro-Raman Spectroscopy
Proc. of the 20th ESSDERC, Nottingham, 1990, Bristol: Hilger, 591-594 (1990)
R. Ostermeir, K. Brunner, G. Abstreiter, W. Weber | Negative Infrared Photoconductivity in Narrow GaAs/AlGaAs Multiple Quantum Well Strucutres
Surface Science 228, 465-467 (1990)
R. Heinrich, R. Zachai, M. Besson, T. Egeler, G. Abstreiter, W. Schlapp, G. Weimann | New Relaxation Mechanism in Short Period Si/Ge Strained-Layer Superlattices
Mat. Res. Soc. Symp. Proc. Vol. 183 183, 155-160 (1990)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer | |
| Novel Relaxation Process in Strained Si/Ge Superlattices Grown on Ge (001)
Appl. Phys. Lett. 57 (1990)
W. Wegscheider, K. Eberl, G. Abstreiter, H. Cerva, H. Oppolzer | Photoluminescence in Short Period Si/Ge Strained Layer Superlattices Grown on Si and Ge Substrates
Surface Science 228, 267-269 (1990)
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel | Photoluminescence in Short-Period Si/Ge Strained-Layer Superlattices
Phys. Rev. Lett. 64 (1990)
R. Zachai, K. Eberl, G. Abstreiter, E. Kasper, H. Kibbel | Plasmon Excitations in lateral GaAs/(AlGa)As Quantum Wire Superlattices
Proc. of the 20th Int.Conf. on the Physics of Semiconductors (1990)
T. Egeler, G. Abstreiter, G. Weimann, T. Demel, D. Heitmann, W. Schlapp | Relevant Scattering Processes, Band Gap Renormalization and Moss-Burstein shift in Modulation Doped Narrow GaAs/AlGaAs Multiple Quantum Wells
Surface Science 229, 398-401 (1990)
U. Bockelmann, P. Hiergeist, G. Abstreiter, G. Weimann, W. Schlapp | Single-Particle and Transport Scattering Times in Narrow GaAs/AlxGa1-xAs Quantum Wells
Phys. Rev. B41 (1990)
U. Bockelmann, G. Abstreiter, G. Weimann, W. Schlapp | Investigations of GaAs/AlGaAs Quantum Well lasers by Micro Raman Spectroscopy
Proc. of the 19th European Solid State Device Research Conference (1989)
S. Beeck, T. Egeler, G. Abstreiter, H. Brugger, P. W. Epperlein, D. J. Webb, C. Hanke | Phonons and Optical Properties of Si/Ge Superlattices
Spectroscopy of Semiconductor Microstructures, Venice, Italy, May 9-13, 1989. Eds.: G. Fasol, A. Fasolino, and P. Lugli. Plenum Press, N.Y. 1989. 165-174. (1989)
G. Abstreiter, K. Eberl, E. Friess, U. Menczigar, W. Wegscheider, R. Zachai | Picosecond Intersubband Spectroscopy
Superlattices and Microstructures 5 (1989)
A. Seilmeier, M. Wörner, G. Abstreiter, G. Weimann, W. Schlapp | Plasmon Excitations in Layered 2D Electron Gas Systems with Large In-Plane Wave Vector
Superlattices and Microstructures 5 (1989)
T. Egeler, S. Beeck, G. Abstreiter, G. Weimann, W. Schlapp | Silicon/Germanium Strained Layer Superlattices
J. of Crystal Growth 95, 431-438 (1989)
G. Abstreiter, K. Eberl, E. Friess, W. Wegscheider, R. Zachai | |
| Strain at Si-Si02 Interfaces Studied by Micro-Raman Spectroscopy
Appl. Surf. Science 39, 116-126 (1989)
K. Brunner, G. Abstreiter, B. O. Kolbesen, H. W. Meul | Annealing Effects in short period Si-Ge strained layer superlattices
Semicond. Sci. Technol. 3, 1166-1170 (1988)
H. Brugger, E. Friess, G. Abstreiter, E. Kasper, H. Kibbel | Direct Observation of Intersubband Relaxation in Narrow Multiple Quamtum Well Structures
Solid-State Electronics 31, 767-770 (1988)
A. Seilmeier, H. J. Hübner, M. Wörner, G. Abstreiter, G. Weimann, W. Schlapp | Electronic Excitations in Narrow GaAs/AlxGa1-xAs Quantum Well Structures
Surface Science 196, 613-618 (1988)
G. Abstreiter, T. Egeler, S. Beeck, A. Seilmeier, H. J. Hübner, G. Weimann, W. Schlapp | Interface Roughness Scattering and Electron Mobilities in Thin GaAs Quantum Wells
Europhys. Letters 6 (1988)
R. Gottinger, A. Gold, G. Abstreiter, G. Weimann, W. Schlapp | Intersubband Relaxation in GaAs/AlxGa1-xAs Quantum Well Structures Observed Directly by an Infrared Bleacing Technique
Phys. Rev. Lett. 59 (1987)
A. Seilmeier, H. J. Hübner, G. Abstreiter, G. Weimann, W. Schlapp | Silicon-Germanium Superlattices
SPIE 792, Vol. 792, Quantum Well and Superlattice Physics, 77-85 (1987)
G. Abstreiter, H. Brugger, K. Eberl, R. Zachai | Dispersion of Folded Phonons in Si/SixGe1-x Superlattices
Superlattices and Microstructures 2 (1986)
H. Brugger, H. Reiner, G. Abstreiter, H. Jorke, H. J. Herzog, E. Kasper | Folded acoustic phonons in Si/SixGe1-x Superlattices
Phys. Rev. B33, 5928-5930 (1986)
H. Brugger, G. Abstreiter, H. Jorke, H. J. Herzog, E. Kasper | Inelastic Light Scattering by Electronic Excitations in Semiconductor Heterostructures
IEEE QE22, 1771-1784 (1986)
G. Abstreiter, R. Merlin, A. Pinczuk | Internal Photoemission - A Suitable Method for Determining Band Offsets in Semiconductor Heterostructures
Surface Science 174, 312-317 (1986)
G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp | |
| Optical and Electronic Properties of Si/SiGe Superlattices
Solid State Sciences 67: Two-Dimensional Systems:Physics and New Devices., F. Kuchar, and H. Heinrich. Springer-Verlag, Berlin 1986. 130-139. (1986)
G. Abstreiter, H. Brugger, T. Wolf, R. Zachai, C. Zeller | Raman Scattering for Studies of Semiconductor-Heterostructures and Superlattices
Proc. of the 18th Int. Conf. on the Physics of Semiconductor 1, Stockholm, Sweden, August 11-15, 1986. Ed.: O. Engström. World Scientific, Singapore 1987. Vol. 1, 739-746. (1986)
G. Abstreiter, H. Brugger | Two-Dimensional Electron Systems in Si/SixGe1-x Strained-Layer Superlattices
Surface Science 174, 640-645 (1986)
G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog | Internal Photoemission in GaAs/(AlxGa1-x)As Heterostructures
Physica 134B, 433- 438 (1985)
G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp | Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixGe1-x Superlattices
Phys. Rev. Lett. 54 (1985)
G. Abstreiter, H. Brugger, T. Wolf, H. Jorke, H. J. Herzog | Tunable electroluminescence in GaAs-doping multilayer structures
J. Vac. Sci. Technol. B3 (1985)
G. Abstreiter, H. Kirchstetter, K. Ploog | Hole sub-bands on silicon surfaces
J. Phys. C:Solid State Phys. 17, 1617-1631 (1984)
M. Baumgartner, G. Abstreiter, E. Bangert | Light Scattering by Free Carrier Excitations in Semiconductors
Topics in Applied Physics 54: Light Scattering in Solids IV. Eds.: M. Cardona and G. Güntherodt. Springer-Verlag, Berlin 1984. 5-150. (1984)
G. Abstreiter, M. Cardona, A. Pinczuk | Resonant Tunneling in Doping Quantum Well Structures
Surface Science 142, 456-459 (1984)
C. Zeller, G. Abstreiter, K. Ploog | Resonant tunneling in MBE-grown pnp-GaAs quantum well structures
Inst. Phys. Conf. Ser. No. 74, Chapter 5, 339-344 (1984)
U. Prechtel, C. Zeller, G. Abstreiter, K. Ploog | Quantization of Photo-excited carriers in GaAs Doping Superlattices
Physica 117B and 118B, 729-731 (1983)
C. Zeller, B. Vinter, G. Abstreiter, K. Ploog | |
| Subband Energies in Accumulation Layers on InP
Solid State Communications 47 (1983)
G. Abstreiter, R. Huber, G. Tränkle, B. Vinter | Inelastic Light Scattering in Hole-Accumulation Layers on Silicon
Solid State Communications 44 (1982)
G. Abstreiter, U. Claessen, G. Tränkle | Quantization of Photoexcited Electrons in GaAs nipi-Crystals
Surface Science 113, 479-480 (1982)
G. Abstreiter, G. H. Döhler, H. Künzel, D. Olego, K. Ploog, R. Ruden, H. J. Stolz | Quasi-two-dimensional photoexcited carriers in GaAs doping superlattices
Phys. Rev. B26 (1982)
C. Zeller, B. Vinter, G. Abstreiter, K. Ploog | The Influence of Temperature and Incident Light Intensity on Single Particle and Collective Excitations in Multilayer Structures
Surface Science 113, 85-88 (1982)
C. Zeller, G. Abstreiter, K. Ploog | Study of GaAs-AlxGa1-xAs Multilayer Systems by Resonant Inelastic Light Scattering Techniques
Inst. Phys. Conf. Ser. No. 56: Chapter 9, 741-749 (1981)
G. Abstreiter, C. Zeller | Determination of Existing Stress in Silicon Films on Sapphire Substrate Using Raman Spectroscopy
Solid-State Electronics 23, 31-33 (1980)
T. Englert, G. Abstreiter, J. Pontcharra | Dynamical effects of the interaction between 4f electrons and optical phonons in rare-earth hydroxides, especially in Tb(OH)3 and Nd(OH)3
J. Phys. C: Solid State Phys. 13, 4545-4564 (1980)
K. Ahrens, H. Gerlinger, H. Lichtblau, G. Schaack, G. Abstreiter, S. Mroczkowski | Magnetic Bragg Scattering in Antiferromagnets Observed through Raman Scattering from Phonons
J. of Magnetism and Magn. Mat. 15-18, 777-778 (1980)
G. Güntherodt, G. Abstreiter, W. Bauhofer, G. Benedek, E. Anastassakis | Coupled Plasmon-L0 Phonon Modes and Lindhard-Mermin Dielectric Function of n-GaAs
Solid State Communications 30, 703-707 (1979)
G. Abstreiter, R. Trommer, M. Cardona, A. Pinczuk | Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-
Phys. Rev. Lett. 42 (1979)
G. Abstreiter, K. Ploog | |
| Resonance Enhancement of Raman Scattering by Electron-Gas Excitations of n-GaAs
Solid State Communications 30, 429-432 (1979)
A. Pinczuk, G. Abstreiter, R. Trommer, M. Cardona | Raman Spectroscopy - A Versatile Tool for Characterization of Thin Films and Heterostructures of GaAs and AlxGa1-xAs
Applied Physics 16, 345-352 (1978)
G. Abstreiter, E. Bauser, A. Fischer, K. Ploog | Anti-Stokes Luminescence in Europium Monochalcogenides
Solid State Communications 22, 609-613 (1977)
R. Merlin, R. Tsu, G. Güntherodt, G. Abstreiter, M. W. Shafer | Forbidden Raman Scattering by L0 Phonons in GaAs
Proc. of the 2nd Int. Conf. on Lattice Dynamics, Paris, September 5-9, 1977. Ed.: M. Balkanski. Flammarion, Paris 1978. 189-191. (1977)
R. Trommer, G. Abstreiter, M. Cardona | Raman Scattering by Wavevector Dependent Coupled Plasmon - L0 Phonons of n-GaAs
Solid State Communications 21, 959-962 (1977)
A. Pinczuk, G. Abstreiter, R. Trommer, M. Cardona | Raman Scattering Studies of Coupled Plasmon-L0 Phonon Modes in n-GaAs
Proc. of the 2nd Int. Conf. on Lattice Dynamics, Paris, September 5-9, 1977. Ed.: M. Balkanski. Flammarion, Paris 1978. 191-192. (1977)
G. Abstreiter, A. Pinczuk, R. Trommer, M. Cardona | Cyclotron resonance of electrons in surface space-charge layers on silicon
Phys. Rev. B14 (1976)
G. Abstreiter, J. P. Kotthaus, J. F. Koch, G. Dorda | Electrons in a Surface Space Charge Layer on Germanium-Shubnikov-de Haas Oscillations and Cyclotron Resonance
Solid State Communications 18, 1397-1399 (1976)
W. Weber, G. Abstreiter, J. F. Koch | Frequency dependence of surface cyclotron resonance in Si
Phys. Rev. B14 (1976)
G. Abstreiter, J. F. Koch, P. Goy, Y. Couder | Raman Scattering by Longitudinal Modes in Opaque n-GaAs
Proc. of the 13th Int. Conf. on the Physics of Semiconductors, Rome, August 30 - September 3, 1976. Ed.: F. G. Fumi. Tipografia Marves, Rome 1976. 779-782. (1976)
G. Abstreiter, A. Pinczuk, R. Trommer, R. Tsu | Cyclotron Resonance of Localized Electrons on a Si Surface
Phys. Rev. Lett. 34 (1975)
J. P. Kotthaus, G. Abstreiter, J. F. Koch, R. Ranvaud | |
| Cyclotron Resonance of Electrons in an Inversion Layer on Si
Phys. Rev. Lett. 32 (1974)
G. Abstreiter, P. Kneschaurek, J. P. Kotthaus, J. F. Koch | Subharmonic Structure of Cyclotron Resonance in an Inversion Layer on Si
Solid State Communications 15, 517-519 (1974)
J. P. Kotthaus, G. Abstreiter, J. F. Koch | Influence of electron capture decay of 57Co on the Mössbauer emission spectrum of hydrated cobalt chlorides
J. Chem Phys. 59 (1973)
J. M. Friedt, G. K. Shenoy, G. Abstreiter, R. Poinsot | Nuclear parameters of the 140 keV Mössbauer level in 99Tc from Mössbauer spectroscopy
J. Phys. A6, L144-L147 (1973)
G. K. Shenoy, G. Abstreiter, G. M. Kalvius, K. Schwochau, K. H. Linse |
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Walter Schottky Institut