Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


Kai Saller

Kai Saller
Doctoral Candidate

Room ZNN1.012
Tel.: (+49) 089 289 11387


Publications

Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires
Appl. Phys. Lett. 112, 091904 (2018)
M. Sonner, J. Treu, K. Saller, H. Riedl, J. J. Finley, G. Koblmueller
Online Ref
Direct measurements of Fermi level pinning at the surface of intrinsically n-type InGaAs nanowires
Nano Lett. 16, 5135 (2016)
M. Speckbacher, J. Treu, T. J. Whittles, W. M. Linhart, X. Xu, K. Saller, V. R. Dhanak, G. Abstreiter, J. Finley, T. D. Veal, G. Koblmueller
Online Ref
Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy
Appl. Phys. Lett., 53110 (2016)
J. Treu, M. Speckbacher, K. Saller, S. Morkötter, M. Doeblinger, X. Xu, H. Riedl, G. Abstreiter, J. Finley, G. Koblmueller
Online Ref
Lattice-matched InGaAs-InAlAs core-shell nanowires with improved luminescence and photoresponse properties
Nano Letters (2015)
J. Treu, T. Stettner, M. Watzinger, S. Morkötter, M. Doeblinger, S. Matich, K. Saller, M. Bichler, G. Abstreiter, J. Finley, J. Stangl, G. Koblmueller
Online Ref
Strong THz emission and its origin from catalyst-free InAs nanowire arrys
Nano Letters, 1508 (2014)
A. Arlauskas, J. Treu, K. Saller, I. Beleckaite, G. Koblmueller, A. Krotkus
Online Ref
Enhanced luminescence properties of InAs-InAsP core-shell nanowires
Nano Letters 13, 6070 (2013)
J. Treu, M. Bormann, H. Schmeiduch, M. Doeblinger, S. Morkötter, S. Matich, P. Wiecha, K. Saller, B. Mayer, M. Bichler, M. C. Amann, J. Finley, G. Abstreiter, G. Koblmueller
Online Ref
1.3µm High-Power Short-Cavity VCSELs for High-Speed Applications
San José, CA, USA (2012) (2012)
M. Mueller, C. Grasse, K. Saller, T. Gruendl, G. Boehm, M. Ortsiefer, M. C. Amann
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm
16th International Conference on Molecular Beam Epitaxy MBE 2010 (2010)
K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, M. C. Amann
MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm
doi:10.1016/j.jcrysgro.2010.11.139 (2010)
K. Vizbaras, A. Bachmann, S. Arafin, K. Saller, S. Sprengel, G. Boehm, R. Meyer, M. C. Amann





Walter Schottky Institut About the Institute Research

Technische Universität München Annual Reports Photonics & Optoelectronics
Am Coulombwall 4 Events and News Quantum Technologies
D-85748 Garching History of WSI Energy Materials
Germany How to get to WSI Engineered Nanomaterials
Scientific Background Functional Interfaces
Tel: +49-(0)89-289-12761 Seminars Nanofabrication
Fax: +49-(0)89-289-12737 The WSI in Numbers

Partners Publications
(c) 2018 Walter Schottky Institut WSI Association

Intranet





Walter Schottky Institut Navigation

Technische Universität München Contact
Am Coulombwall 4 Groups
D-85748 Garching Institute
Germany Partners
Publications
Tel: +49-(0)89-289-12761 Research
Fax: +49-(0)89-289-12737 Groups
Intranet
(c) 2018 Walter Schottky Institut