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WSI-related Publications for year:
A novel electroneutral anion host based on organoboron betaines Journal Fur Praktische Chemie-Chemiker-Zeitung 341, 291-296 (1999) A. Cattani-Scholz, F. P. Schmidtchen | A nonlinear transport device with no intrinsic threshold Microstructures 25, 269 (1999) A. M. Song, S. Manus, M. Streibl, A. Lorke, J. P. Kotthaus, W. Wegscheider, M. Bichler | A semiconductor-based photonic memory cell Science 283, 1292-1295 (1999) S. Zimmermann, A. Wixforth, 1. J. P. Kotthaus, 1. W. Wegscheider, 2. M. Bichler2 | Analysis of composition fluctuations in AlxGa1-xN MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 59 1-3 182-185 (1999) B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, M. Stutzman, M. Albrecht, H. P. Strunk | Anomalous Kondo Effect in a Quantum Dot at Nonzero Bias Phys. Rev. Lett. 83, 804 (1999) F. Simmel, R. H. Blick, J. P. Kotthaus, W. Wegscheider, M. Bichler | Atomistic modeling of large-scale metal film growth fronts Phys. Rev. B 59, R7856 (1999) U. Hansen, P. Vogl, V. Fiorentini | Ballistic magnetotransport in a semiconductor microjunction with broken symmetry Superlattices and Microstructures 25, 149 (1999) A. M. Song, A. Lorke, J. P. Kotthaus, W. Wegscheider, M. Bichler | Capacitively detected magnetic resonance of defects in MOSFETs PHYSICA B 274 1027-1030 (1999) M. S. Brandt, R. Neuberger, M. Stutzmann | Capacitively-detected magnetic resonance in hydrogenated amorphous silicon solar cells JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10B L1172-L1174 (1999) M. S. Brandt, R. T. Neuberger, M. W. Bayerl, M. Stutzmann | Carrier recombination at screw dislocations in n-type AlGaN layers PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 409-414 (1999) M. Albrecht, A. Cremades, J. Krinke, S. Christiansen, O. Ambacher, J. Piqueras, H. P. Strunk, M. Stutzmann | Characteristics of surface and waveguide emitting SiGe:Er:O diodes Journal of Luminescence 80, 321-327 (1999) A. Sticht, E. Neufeld, A. Luigart, K. Brunner, G. Abstreiter, H. Bay |
| Characterization of AlGaN-Schottky diodes grown by plasma induced molecular beam epitaxy PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 1 163-167 (1999) U. Karrer, A. Dobner, O. Ambacher, M. Stutzmann | Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 S279-S282 (1999) J. W. Kim, C. S. Son, I. H. Choi, Y. K. Park, Y. T. Kim, O. Ambacher, M. Stutzmann | Commensurate composite fermions in weak periodic electrosatic potentials: direct evidence of a periodic effective magnetic field Phys. Rev. Lett. 83, 2620-2623 (1999) J. H. Smet, S. Jobst, K. V. Klitzing, D. Weiss, W. Wegscheider, V. Umansky | Comparison of different substrates for a fully depleted soi-cmos-technology Electron Technology, 151-153 (1999) T. Huttner, H. Wurzer, R. Mahnkopf, S. Pindl, G. Abstreiter | Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES and 38 9A 4962-4968 (1999) R. Dimitrov, A. Mitchell, L. Wittmer, O. Ambacher, M. Stutzmann, J. Hilsenbeck, W. Rieger | Composition analysis using elastic recoil detection PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 679-682 (1999) L. Gorgens, G. Dollinger, A. Bergmaier, O. Ambacher, L. Eastman, J. A. Smart, J. F. Shealy, R. Dimitrov, M. Stutzmann, A. Mitchell | Compositional fluctuations in GaInN GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy APPLIED PHYSICS LETTERS 74 26 3981-3983 (1999) N. Wieser, O. Ambacher, H. P. Felsl, L. Gorgens, M. Stutzmann | Correlated SiGe wires shaped by regular step bunches on miscut Si (113) substrates Phys. Rev. B 60, 10935 (1999) J. Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst, M. Rühle | Correlation of photoconductivity and structure of microcrystalline silicon thin films with submicron resolution APPLIED PHYSICS LETTERS 75 12 1742-1744 (1999) B. Rezek, C. E. Nebel, M. Stutzmann | Coulomb blockade effects in a highly doped silicon quantum wire fabricated on novel molecular beam epitaxy grown material Jpn. J. Appl. Phys. 38, 465-468 (1999) T. Koestera, F. Goldschmidtboeinga, B. Hadama, J. Steina, S. Altmeyera, B. Spangenberga, H. Kurza, R. Neumannb, K. Brunnerb, G. Abstreiterb | CV and DLTS experiments in boron-doped diamond PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 174 1 117-127 (1999) C. E. Nebel, R. Zeisel, M. Stutzmann |
| Design and realization of a buried-heterostructure tunable-twin-guide laser diode with electrical blocking regions IEEE Journal of Quantum Electronics 35, 794-802 (1999) B. Schmidt, S. Illek, R. Gessner, M. C. Amann | Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range PHYSICAL REVIEW B 59 3 1845-1849 (1999) T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, W. Richter, O. Ambacher, M. Stutzmann, M. Cardona | Direct observation of hole edge channels in a two dimensional electron gas Phys. Rev. Lett. 83, 3033-3036 (1999) A. Paassen, A. Zrenner, A. L. Efros, M. Stopa, J. Frankenberger, M. Bichler, W. Wegscheider | Direct observation of the intersubband Bernstein modes: Many-body coupling with spin- and charge-density excitations Phys. Rev. B 59, R12751 (1999) V. E. Kirpichev, L. V. Kulik, I. V. Kukushkin, K. V. Klitzing, K. Eberl, W. Wegscheider | Direct sub-µm lateral patterning of SOI by focused laser beam induced oxidation Microelectronic Engineering 48, 367-370 (1999) R. A. Deutschmann, M. Huber, R. Neumann, K. Brunner, G. Abstreiter | Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 807-811 (1999) N. Wieser, O. Ambacher, H. Angerer, R. Dimitrov, M. Stutzmann, B. Stritzker, J. K. N. Lindner | Dynamics of electronic ``bubble'' formation in solid hydrogen J. Lumin. 83-84, 135-8 (1999) F. Vigliotti, C. Jeannin, M. T. Portella-Oberli, M. Chergui, R. Scholz | Dynamics of electronic ``bubble'' formation in solid hydrogen: A classical model based on fluid dynamics Phys. Rev. Lett. 83, 2355-8 (1999) F. Vigliotti, E. Sarraf, M. Chergui, R. Scholz | Editorial PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 2 U3-U3 (1999) M. Stutzmann | Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures Phys. Rev. B 59, 13242-13250 (1999) C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. Schäffler | Enhancement of erbium photoluminescence by substitutional C alloying of Si Appl. Phys. Lett. 75, 2584-2586 (1999) M. Markmann, E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter |
| Exact exchange Kohn-Sham formalism applied to semiconductors Phys. Rev. B 59, 10031 (1999) M. Städele, M. Moukara, J. A. Majewski, P. Vogl, A. Görling | Excitonic transitions in cubic AlGaN MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS 164 419-424 (1999) G. Salviati, C. Zanotti-Fregonara, M. Albrecht, N. Armani, S. Christiansen, H. P. Strunk, H. Angerer, O. Ambacher, M. Stutzmann | Experimental and theoretical studies of near-breakdown phenomena in heterostructure FET in: Proceedings GaAs-99, München (1999) A. Sleimann, L. Rossi, A. D. Carlo, L. Tocca, A. Bonfiglio, M. Brunori, P. Lugli, G. Zandler, G. Meneghesso, E. Zanoni, C. Canali, A. Cetronio, M. Lanzieri, M. Peroni | Explaining the dependencies of the hole and electron mobilities in Si MOSFET's inversion layers IEDM Tech. Dig. 1999, 527 (1999) A. Pirovano, A. L. Lacaita, G. Zandler, R. Oberhuber | Fabricating tunable semiconductor devices with an atomic force microscope Appl. Phys. Lett 75, 1134 (1999) R. Held, S. Lüscher, T. Heinzl, K. Ensslin, W. Wegscheider | First-order phase transitions in a quantum Hall ferromagnet Nature 402, 638 (1999) V. Piazza, V. Pellegrini, F. Beltram, W. Wegscheider, T. Jungwirth, A. H. MacDonald | Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures Appl. Phys. Lett. 74, 2002-4 (1999) F. D. Sala, A. D. Carlo, P. Lugli, F. Bernardini, V. Fiorentini, R. Scholz, J. M. Jancu | From CaSi2 to siloxene: epitaxial silicide and sheet polymer films on silicon JOURNAL OF CRYSTAL GROWTH 203 4 570-581 (1999) G. Vogg, M. S. Brandt, M. Stutzmann, M. Albrecht | High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy APPLIED PHYSICS LETTERS 75 23 3653-3655 (1999) M. J. Murphy, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, J. Silcox, R. Dimitrov, M. Stutzmann | High-resolution x-ray diffraction on self-organized step bunches of Si1-xGex grown on (113)-oriented Si J. Phys. D: Appl. Phys. 32, A71-A74 (1999) J. Stangl, V. Holy, A. A. Darhuber, P. Mikulik, G. Bauer, J. Zhu, K. Brunner, G. Abstreiter | Impact of piezo- and pyroelectric fields onto transport properties and device performance in III-nitride heterostructure devices in: Proc. of the 24th Int. Conf. on the Physics of Semiconductors, 1998, Jerusalem, Israel, Ed. D. Gershoni, World Scientific (1999) G. Zandler, R. Oberhuber, F. Compagnone, P. Vogl |
| Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots Appl. Phys. Lett. 75, 3968-3970 (1999) M. Arzberger, U. Käsberger, G. Böhm, G. Abstreiter | Influence of growth conditions on the photoluminescence of self-assambled InAs/GaAs quantum dots J. of Appl. Phys. 85, 2355-2362 (1999) L. Chu, M. Arzberger, G. Böhm, G. Abstreiter | Influence of the Chemical Structure on the Luminescence Properties of Organic Dye Molecules Mat. Res. Soc. Proc. (1999) E. Zojer, U. Rant, G. Leising, N. Schulte, A. Schlüter, P. Buchacher, R. Müllner, F. Stelzer, F. Wudl, J. Bredas | In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography Appl. Phys. Lett. 75, 2452-2454 (1999) S. Lüscher, A. Fuhrer, R. Held, T. Heinzel, K. Ensslin, W. Wegscheider | Interaction of scarred wavefunctions and spontaneous spin polarization in quantum dot Microelectronic Engineering 47, 119 (1999) M. Stopa | Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 3A L217-L219 (1999) M. K. Kelly, R. P. Vaudo, V. M. Phanse, L. Gorgens, O. Ambacher, M. Stutzmann | Lateral ordering of coherent Ge islands on Si(001) studied by triple-crystal grazing incidence diffraction Appl. Phys. Lett. 74, 2978-2980 (1999) I. Kegel, T. H. Metzger, J. Peisl, P. Schittenhelm, G. Abstreiter | Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron system JETP Letters 69, 603-609 (1999) A. Shashkin, V. T. Dolgopolov, E. V. Deviatov, B. Irmer, A. G. C. Haubrich, J. P. Kotthaus, M. Bichler, W. Wegscheider | Magnetization of the fractional quantum hall states Phys. Rev. Lett. 82, 819-822 (1999) I. Meinel, T. Hengstmann, D. Grundler, D. Heitmann, W. Wegscheider, M. Bichler | Magneto-optical studies of GaAs/A1GaAs T-shaped quantum wire structures fabricated by cleaved edge overgrowth Journal of Crystal Growth 201/202, 805- 09 (1999) L. Sorba*, 1. L. Sorba*, G. Schedelbeck, G. B. M. Bichler | Magnetotransport properties of arrays of cross-shaped antidots Phys. Rev. B 60, 8845 (1999) S. D. Haan, A. Lorke, R. Hennig, M. Suhrke, W. Wegscheider, M. Bichler |
| Mechanical nanomanipulation of single strain-induced semiconductor quantum dots Appl. Phys. Lett. 75, 358-360 (1999) C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto | Microwave Spectroscopy of a Single Quantum Dot in the few Electron Limit Electrochemical Soc. Proceedings Vol. 99-22 99-22, p. 406-12 (1999) H. Qin, F. Simmel, A. Holleitner, R. H. Blick, J. P. Kotthaus, W. Wegscheider, M. Bichler | MOCVD-epitaxy on free-standing HVPE-GaN substrates PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 1 443-446 (1999) C. R. Miskys, M. K. Kelly, O. Ambacher, M. Stutzmann | Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMT´s Physica B 272, 558-661 (1999) G. Zandler, L. Rossi, A. D. Carlo, L. Tocca, A. Bonfiglio, M. Brunori, P. Lugli, G. Meneghesso, R. Zanoni | New type of electron nuclear-spin interaction from resistively detected NMR in the fractional quantum hall effect regime Phys. Rev. Lett. 82, 4070-4073 (1999) S. Kronmüller, W. Dietsche, K. V. Klitzing, G. Denninger, W. Wegscheider, M. Bichler | Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 4 art. no.-G8.4 (1999) M. J. Murphy, B. E. Foutz, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, R. Dimitrov, M. Stutzmann, W. Rieger | Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy Eastman, T. J. Eustis, R. Dimitrov, M. Stutzmann, and W. Rieger MRS Internet. J. Nitride Semicond. Res. 4S1, G8.4 (1999) M. J. Murphy, B. E. Foutz, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. | Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots Appl. Phys. Lett. 75, 3599-3601 (1999) L. Chu, A. Zrenner, G. Böhm, G. Abstreiter | ODMR of bound excitons in Mg-doped GaN PHYSICA B 274 120-123 (1999) M. W. Bayerl, M. S. Brandt, T. Suski, I. Grzegory, S. Porowski, M. Stutzmann | Optical and electrical properties of doped amorphous silicon suboxides PHYSICAL REVIEW B 60 19 13561-13572 (1999) R. Janssen, A. Janotta, D. Dimova-Malinovska, M. Stutzmann | Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes PHYSICA B 274 811-814 (1999) E. R. Glaser, T. A. Kennedy, B. R. Bennett, B. V. Shanabrook, L. A. Hemstreet, M. W. Bayerl, M. S. Brandt |
| Optical and transport properties of low-dimensional structures fabricated by cleaved edge overgrowth Microelectronic Engineering 47, 215-219 (1999) W. Wegscheider, M. Rother, G. Schedelbeck, M. Bichler, G. Abstreiter | Optical properties of low-dimensional structures fabricated by cleaved edge overgrowth (1999) W. Wegscheider, G. Schedelbeck, M. Bichler, G. Abstreiter | Optically induced persistent charge storage effects in self assembled InAs quantum dots Jpn. J. Appl. Phys. 38, 531-534 (1999) J. J. Finley, M. Skalitz, M. Arzberger, A. Zrenner, G. Böhm, G. Abstreiter | Optimization of erbium-doped light-emitting diodes by p-type counterdoping Appl. Phys. Lett. 75, 647-649 (1999) E. Neufeld, M. Markmann, K. Brunner, G. Abstreiter | Passivation of boron in diamond by deuterium APPLIED PHYSICS LETTERS 74 13 1875-1876 (1999) R. Zeisel, C. E. Nebel, M. Stutzmann | Pauli-blocking imaging of single strain-induced semiconductor quantum dots Appl. Phys. Lett. 74, 3200-3202 (1999) C. Obermüller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, S. Manus, J. Feldmann, H. Lipsanen, M. Sopanen, J. Ahopelto | Photocapacitance study of boron-doped chemical-vapor-deposited diamond PHYSICAL REVIEW B 60 4 2476-2479 (1999) R. Zeisel, C. E. Nebel, M. Stutzmann, E. Gheeraert, A. Deneuville | Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots Appl. Phys. Lett. 75, 2247-2249 (1999) L. Chu, M. Arzberger, A. Zrenner, G. Böhm, G. Abstreiter | Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10A L1083-L1084 (1999) B. Rezek, C. E. Nebel, M. Stutzmann | Porphyrin-polyazacryptand conjugates: Novel receptors for nucleotides Tetrahedron 55, 7829-7834 (1999) V. Kral, A. Cattani-Scholz, A. Sinica, F. P. Schmidtchen | Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon MONATSHEFTE FUR CHEMIE 130 1 79-87 (1999) G. Vogg, N. Zamanzadeh-Hanebuth, M. S. Brandt, M. Stutzmann, M. Albrecht |
| Pyroelectronics: Novel device concepts based on nitride interfaces J. Vac. Sci. Technol. B 17, 1617-1621 (1999) G. Zandler, J. A. Majewski, P. Vogl | Quasiharmonic versus exact surface free energies of al: A systematic study employing a classical interatomic potential Phys. Rev. B 60, 5055 (1999) U. Hansen, P. Vogl, V. Fiorentini | Reaction rates for ionized physical vapor deposition modeling from molecular-dynamics calculations: Effect of surface roughness Phys. Rev. B 60, 14417 (1999) U. Hansen, A. Kersch | Reflectance difference spectroscopy characterization of AlxGa1-xN-compound layers PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 215-220 (1999) U. Rossow, D. E. Aspnes, O. Ambacher, V. Cimalla, N. V. Edwards, M. Bremser, R. F. Davis, J. A. Schaefer, M. Stutzmann | Regular step bunching and ordering of Ge Islands on vicinal Si surfaces Proc. of ICPS 24, Ed. D. Gershoni World Scientific, p. 61 ff (1999) K. Brunner, J. Zhu, G. Abstreiter, O. Kienzle, F. Ernst | Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 381-389 (1999) O. Ambacher, R. Dimitrov, M. Stutzmann, B. E. Foutz, M. J. Murphy, J. A. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Chumbes, B. Green, A. J. Sierakowski, W. J. Schaff, L. F. Eastman | Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice Appl. Phys.74 (15), 2179-2181 (1999) E. Schomburg, A. M. Heini, J. M. Chamberlain, D. P. Steenson, S. Brandl, K. Hofbeck, K. F. Renk, W. Wegscheider | Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE Phys. Rev. B, 60 (1999) K. Schmalz, I. N. Yassievich, P. Schittenhelm, G. Abstreiter | Spatially resolved spectroscopy of single and coupled quantum dots Jpn. J. Appl. Phys. 38, 449-454 (1999) G. Abstreiter, M. Bichler, M. Markmann, G. Schedelbeck, W. Wegscheider, A. Zrenner | Spatially resolved spectroscopy on single self-assembled quantum dots Journal of Electronic Materials 28, 542 (1999) A. Zrenner, M. Markmann, E. Beham, F. Findeis, G. Böhm, G. Abstreiter | Step characterization on vicinal Si surfaces by reflection high-energy electron diffraction at arbitrary azimuths Applied Surface Science 137, 191-196 (1999) J. Zhu, K. Brunner, G. Abstreiter |
| Strain relaxation of facetted Ge islands on Si (113) Appl. Phys. Lett. 75, 2395-2397 (1999) J. Zhu, C. Miesner, K. Brunner, G. Abstreiter | The origin of red luminescence from Mg-doped GaN PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 547-550 (1999) M. W. Bayerl, M. S. Brandt, E. R. Glaser, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. Stutzmann | Theoretical insights into CoSi2/CaF2 tunnelig diodes Physica B 272 (1999) C. Strahberger, P. Vogl | Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP Superlattices and Microstructures 25, 351-5 (1999) J. M. Jancu, F. Beltram, R. Scholz, A. D. Carlo | Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 1 42-45 (1999) J. W. Kim, Y. K. Park, Y. T. Kim, C. S. Son, I. H. Choi, O. Ambacher, M. Stutzmann | Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures JOURNAL OF APPLIED PHYSICS 85 6 3222-3233 (1999) O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, J. Hilsenbeck | Ultrafast coherent vibronic dynamics of F and F_H(OH-) centers in KBr in: Proceedings of XIV International Symposium on Electron-Phonon Dynamics and Jahn-Teller Effect, Erice, 7-13 July 1998 (1999) R. Scholz, V. Dierolf, F. Bassani | Untitled PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 171 2 U3-U3 (1999) M. Stutzmann | Vibrational anti-crossing in siloxene PHYSICA STATUS SOLIDI B-BASIC RESEARCH 215 1 409-412 (1999) M. S. Brandt, L. Hoppel, N. Zamanzadeh-Hanebuth, G. Vogg, M. Stutzmann |
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