Walter Schottky Institute
Center for Nanotechnology and Nanomaterials


Martin Hetzl

Martin Hetzl


Room S106
Tel.: (+49) 089 289 11314


Publications

A systematic investigation of radiative recombination in GaN nanowires: The influence of nanowire geometry and environmental conditions
J. Appl. Phys. 124, 035704 (2018)
M. Hetzl, M. Kraut, T. Hoffmann, J. Winnerl, K. Boos, A. Zeidler, I.D. Sharp, M. Stutzmann
Online Ref
Contact morphology and revisited photocurrent dynamics in monolayer MoS2
Nature 2D Materials and Applications 1, 40 (2017)
E. Parzinger, M. Hetzl, U. Wurstbauer, A. Holleitner
Online Ref
Homoepitaxial growth of high quality (111)-oriented single crystalline diamond
Diam. Relat. Mater. 72, 41 - 46 (2017)
C. J. Widmann, M. Hetzl, S. Drieschner, C. E. Nebel
Online Ref
Polarity Control of Heteroepitaxial GaN Nanowires on Diamond
Nano Lett. 17, 3582-3590 (2017)
M. Hetzl, M. Kraut, T. Hoffmann, M. Stutzmann
Online Ref
Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires
Nanoscale 9, 7179-7188 (2017)
M. Hetzl, J. Winnerl, L. Francaviglia, M. Kraut, M. Doblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann
Online Ref
GaN nanowires on diamond
Mat. Sci. Semicon. Proc. 48, 65-78 (2016)
M. Hetzl, F. Schuster, A. Winnerl, S. Weiszer, M. Stutzmann
Online Ref
Strain-Induced Band Gap Engineering in Selectively Grown GaN–(Al,Ga)N Core–Shell Nanowire Heterostructures
Nano Lett. 16, 7098 (2016)
M. Hetzl, M. Kraut, J. Winnerl, L. Francaviglia, M. Döblinger, S. Matich, A. Fontcuberta i Morral, M. Stutzmann
Online Ref
Doped GaN nanowires on diamond: Structural properties and charge carrier distribution
J. Appl. Phys. 117, 44307 (2015)
F. Schuster, A. Winnerl, S. Weiszer, M. Hetzl, J. A. Garrido, M. Stutzmann
Online Ref
Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions
(2015)
F. Schuster, M. Hetzl, S. Weiszer, M. Wolfer, H. Kato, C. E. Nebel, J. A. Garrido, M. Stutzmann
Online Ref
Position-Controlled Growth of GaN Nanowires and Nanotubes onDiamond by Molecular Beam Epitaxy
Nano Lett. 15, 1773 (2015)
F. Schuster, M. Hetzl, S. Weiszer, J. A. Garrido, M. de la Mata, C. Magen, J. Arbiol, M. Stutzmann
Online Ref
Heteroepitaxial ZnO Films on Diamond: Optoelectronic Properties and theRole of Interface Polarity
J. Appl. Phys. 115, 213508 (2014)
F. Schuster, M. Hetzl, C. Magén, J. Arbiol, J. A. Garrido, M. Stutzmann
Online Ref
Influence of substrate material, orientation, and surface termination on GaN nanowire growth
J. Appl. Phys. 116, 54301 (2014)
F. Schuster, S. Weiszer, M. Hetzl, A. Winnerl, J. A. Garrido, M. Stutzmann
Online Ref





Walter Schottky Institut About the Institute Research

Technische Universität München Annual Reports Photonics & Optoelectronics
Am Coulombwall 4 Events and News Quantum Technologies
D-85748 Garching History of WSI Energy Materials
Germany How to get to WSI Engineered Nanomaterials
Scientific Background Functional Interfaces
Tel: +49-(0)89-289-12761 Seminars Nanofabrication
Fax: +49-(0)89-289-12737 The WSI in Numbers

Partners Publications
(c) 2018 Walter Schottky Institut WSI Association

Intranet





Walter Schottky Institut Navigation

Technische Universität München Contact
Am Coulombwall 4 Groups
D-85748 Garching Institute
Germany Partners
Publications
Tel: +49-(0)89-289-12761 Research
Fax: +49-(0)89-289-12737 Groups
Intranet
(c) 2018 Walter Schottky Institut