Walter Schottky Institute
Center for Nanotechnology and Nanomaterials

Thomas Stettner

Thomas Stettner

Room S312
Tel.: (+49) 089 289 11587


Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core–Multishell Nanowires
Nano Letters 18, 6292 (2018)
T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, P. Schmiedeke, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, G. Koblmueller
Online Ref
Helium ion microscopy as a high-resolution probe for complex quantum heterostructures in core-shell nanowires
Nano Letters 18, 3911 (2018)
C. Pöpsel, J. Becker, N. Jeon, M. Döblinger, T. Stettner, Y. Trujillo Gottschalk, B. Loitsch, S. Matich, M. Altzschner, A.W. Holleitner, J. Finley, L.J. Lauhon, G. Koblmueller
Online Ref
Direct coupling of coherent emission from site-selectively grown III-V nanowire lasers into proximal silicon waveguides
ACS Photonics 4, 2537 (2017)
T. Stettner, T. Kostenbader, D. Ruhstorfer, J. Bissinger, H. Riedl, M. Kaniber, G. Koblmueller, J. Finley
Online Ref
GaAs-AlGaAs core-shell nanowire lasers on silicon: Invited Review
Semicond. Sci. Techol. Topical Review (2017)
G. Koblmueller, B. Mayer, T. Stettner, G. Abstreiter, J. Finley
Online Ref
Long-term mutual phase locking of picosecond pulse pairs generated by a semiconductor nanowire laser
Nature Comm. 8, 15521 (2017)
B. Mayer, A. Regler, S. Sterzl, T. Stettner, G. Koblmueller, M. Kaniber, B. Lingnau, K. Luedge, J. Finley
Online Ref
Coaxial GaAs-AlGaAs core-multishell nanowire lasers with epitaxial gain control
Appl. Phys. Lett. 108, 11108 (2016)
T. Stettner, P. Zimmermann, B. Loitsch, M. Döblinger, A. Regler, B. Mayer, J. Winnerl, S. Matich, H. Riedl, M. Kaniber, G. Abstreiter, G. Koblmueller, J. Finley
Online Ref
Lattice-matched InGaAs-InAlAs core-shell nanowires with improved luminescence and photoresponse properties
Nano Letters (2015)
J. Treu, T. Stettner, M. Watzinger, S. Morkötter, M. Doeblinger, S. Matich, K. Saller, M. Bichler, G. Abstreiter, J. Finley, J. Stangl, G. Koblmueller
Online Ref
Trade-off between morphology, extended defects and compositional fluctuation induced carrier localization in high In-content InGaN
J. Appl. Phys., 53501 (2014)
J. Zi-Jian Ju, B. Loitsch, T. Stettner, F. Schuster, M. Stutzmann, G. Koblmueller
Online Ref

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(c) 2018 Walter Schottky Institut