Research activities - Introduction

Semiconductor physics, being one of the largest branches of solid state physics, studies both the fundamental principles of nature and the complexity of its systems. Semiconductors reflect the enormous diversity in phenomena and complexity in nature more vividly than most other physical systems. Clearly, semiconductors form the heart of modern technology, as every chip and every laser in any high tech gadget is made out of them. What renders semiconductors really unique and fascinating, however, is their incredible richness in phenomena, and the enormous range of their physical parameters.

Where, do you think, can we study atoms in extreme conditions that naturally only occur in neutron stars? Where, do you believe, can we watch free quarks - a breakup of the fundamental electrical charge? In semiconductors! In fact, recently Horst Störmer was awarded the nobel prize for finding free fractional charges in a semiconductor called Galliumarsenide. The physical properties of semiconductors can be tailored and adjusted by so many orders of magnitude, its "building blocks" - the atoms - can be arranged one by one at will, so that they help us forming a whole new world in the lab - artificial atoms with the shape of a square box, artificial molecules a thousand times larger than natural ones so we can inspect their properties easily, long wires with just a single atom's diameter, nanosized machines that may perhaps travel our blood vessels one day, and so on and so on.

We at the Walter Schottky Institut use simple table top experiments as well as large and highly sophisticated equipment, rigorous mathematical theory and phenomenological theory, analytic formalism and computer simulation. All these approaches meet in semiconductor physics, frequently within a single doctoral thesis.

Research activities - Funding

The WSI is well funded by several national and international research agencies and industries and equipped with state of the art fabrication and characterization tools for semiconductors that put its laboratories at the forefront of international semiconductor research. A list of the most prominent funding partners is available here

Research activities - Details

The research activity of the WSI thus covers a wide spectrum from basic physics in low-dimensional semiconductor structures to the development of novel or improved electronic and optoelectronic devices based on semiconductor heterostructures. The close collaboration between the different groups and the availability of various experimental techniques are the essential basis for the successful development of novel semiconductor devices. Close contacts with industrial partners, especially with Infineon Corporation (formerly Siemens) have also proven to be very fruitful and stimulating in picking up new ideas and in following new directions which may be relevant for future applications.

Apart from the extensive research activities, all groups are involved in teaching within their respective departments. Besides the usual teaching responsibilities in undergraduate and graduate courses, special emphasis is put on the education of diploma and doctoral students in the physics and technology of modern and future devices and of low-dimensional semiconductor structures.

E24: Experimental Semiconductor Physics I (Gerhard Abstreiter)

Research projects of E24 deal with various aspects of electronic and optical properties of low-dimensional, mesoscopic semiconductor structures, the heteroepitaxy of group IV and III-V semiconductors, the development of novel methods for lateral patterning and self assembly of quantum wires and quantum dots, the use of various analytical tools for the characterization of nanometer-sized structures in collaboration with external groups, as well as the fabrication and test of new, unconventional electronic and optoelectronic devices. Examples for basic research are optical spectroscopy of single quantum dots, cleaved edge overgrowth on GaAs, magnetotransport in ultrahigh mobility GaAs heterostructures as well as electronic transport and tunneling in edge channels and one-dimensional systems. Device and technology oriented work aims at novel concepts for charge and spin storage in quantum dots, coherent devices based on quantum dots for future quantum information technology, photonic crystal microcavities for efficient single photon sources and the test of semiconductor nanostructures for chemical/biological sensors. A new area of research is the controlled manipulation of oligonucleotides on gold surface for possible protein detection and the development of SOI based lab-on-a-chip systems. Also of increasing interest are carbon based nanostructures and combinations with organic molecules.

Learn more about the different research areas on the research pages of the Abstreiter, Finley, and Holleitner groups.

Major Research Funding

Funding by the following institutions is gratefully acknowledged: 

  Nanosystems Initiative Munich

 TUM Institute for Advanced Study

 Deutsche Forschungsgemeinschaft (Sonderforschungsbereich SFB 631)

Experimental Semiconductor Physics (Martin Stutzmann)

The work of the second semiconductor physics group at the Walter Schottky Institut deals with various aspects of new and non conventional semiconductor materials and material combinations: semiconductors with a wide bandgap (GaN, InGaN, AlGaN, diamond, SiC) disordered semiconductors (amorphous, nanocrystalline, and polycrystalline) advanced thin film systems (silicon-based luminescent layers, thin film solar cells, organic/anorganic heterosystems, biofunctionalized semiconductors). Most of these material systems are prepared in our group by suitable deposition techniques (MBE, MOCVD, Plasma-enhanced CVD, e-beam evaporation, sputtering). Their efficient optimization is based on the large pool of structural, optical, and electrical characterization techniques available in our Institute. Complementary to the usual spectroscopic techniques we have developed and employ a variety of highly sensitive methods which enable us to study in particular the influence of defects on the electronic performance of materials and devices. Such techniques include subgap absorption spectroscopy, optically induced capacitance spectroscopy and, in particular, modern spin resonance techniques which are applied to various materials systems and devices for spintronics.

In addition to the preparation and characterization of new semiconductor materials we also work on the modification and processing of semiconductors with pulsed high power laser systems (laser-crystallization, holographic nano structuring, laser-induced etching) and investigate the potential of new material systems for novel device structures. Recent examples include nano structured thin film solar cells, high electron mobility transistors based on AlGaN/GaN hetero structures, as well as UV-detectors, sensors and biosensors.

Learn more about the different research areas on the research pages of the Stutzmann, Brandt, and Garrido groups.

Semiconductor Technology (Markus-Christian Amann)

Major areas of research are on modern technologies of III-V compound semiconductors, including epitaxy, lithography and etching, and their application in electronic and optoelectronic devices. Molecular beam epitaxy with solid sources (MBE) and gas sources (CBE with group III-alkyls and V-hydrides) is the basis for the controlled growth of heterostructures on GaAs- and InP-substrates for device oriented research, whereas selective growth on masked and patterned substrates is investigated for optoelectronic integration and direct synthesis of one- or quasi zero-dimensional structures of nanometer dimensions. Lateral dimensions in the 100 nm range are obtained by e-beam lithography. Reactive ion etching with high material selectivity and control in monolayer dimensions is utilized for device processing. The device research focuses on key devices, particularly for advanced photonic applications. This includes electronically wavelength tunable lasers, singlemode distributed feedback (DFB) lasers, vertical cavity surface emitting lasers and long wavelength lasers (>1.55 µm) for sensing applications. The development of mathematical models plays an important role for the design and optimization of technological processes and device performance.

The main research projects of E26 are laser devices like Vertical Cavity Surface Emitting Lasers (VCSELs) for sensing applications as well as for high-speed communication systems. For applications in the mid infrared range research on efficient injector less Quantum Cascade Lasers is performed. Furthermore development work in creating single photons in the telecommunications range (1.3µm and 1.5µm) is established.

Collective Quantum Dynamics (Michael Knap)


A young and dynamic group focusing on theoretical quantum many-body physics has been launched in July 2015 at the Department of PhysicsTechnische Universität München (TUM). The group is headed by Michael Knap and will study collective quantum dynamics. Our research clusters around a broad range of questions from condensed matter theory and also bridges to quantum optics, atomic physics, quantum information, and computational sciences.





TUM Technische Universität München TUM Technische Universität München Physik Department Elektrotechnik und Informationstechnik TUM Technische Universität München

Events & News

05 Aug 2016

Best Poster Award at iNow 2016 for Hannes Schmeiduch   more

27 Jul 2016

Best Poster Award for "Few-QD nanolaser" at PECS-XII   more

13 Jul 2016

Best Poster Award at HeFIB for Julian Klein   more

04 Jul 2016

CSW 2016 Best Paper Award for Bernhard Loitsch   more

14 Jun 2016

Poster Award at 10th IGSSE Forum in Raitenhaslach   more