Driving Perpendicular Heat Flow: (p×n)-Type Transverse Thermoelectrics for Microscale and Cryogenic Peltier Cooling
Phys. Rev. Lett. 110, 227701 (2013)
C. Zhou | S. Birner | Y. Tang | K. Heinselman | M. Grayson
Online Reference
Homogeneous array of nanowire-embedded quantum light emitters
Nano Letters, DOI: 10.1021/nl303075q (2013).
M. Makhonin | A. P. Foster | A. Krysa | P. Fry | D. Davies | T. Grange | T. Walther | M. Skolnick | L. R. Wilson
Online Reference
Improvement of QDIP performance due to quantum dots with built-in charge
Infrared Physics & Technology 59, 84 (2103)
V. Mitin | A. Sergeev | N. Vagidov | S. Birner
Online Reference
Solution processable carbon nanotube network thin-film transistors operated in electrolytic solutions at various pH
Applied Physics Letters 101 223101 (2012)
T. Haeberle | A. Münzer | F. Buth | J. A. Garrido | A. Abdellah | B. Fabel | P. Lugli | G. Scarpa
Assessment of approximations in nonequilibrium Green’s function theory
Phys. Rev. B 83, 195304 (2011)
T. Kubis | P. Vogl
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Modeling of semiconductor nanostructures and semiconductor–electrolyte interfaces
Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 135,
Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 239 pp. (2011)
ISBN 978-3-941650-35-0
S. Birner
Online Reference
Towards a hybrid CMOS-imager with organic semiconductors as photoactive layer
Ph.D. Research in Microelectronics and Electronics (PRIME), 2011 7th Conference on, 89 -92 (2011)
DOI:10.1109/PRIME.2011.5966224
D. Baierl | M. Schmidt | G. Scarpa | P. Lugli | L. Pancheri | D. Stoppa | G. F. Dalla Betta
Decoherence of intraband transitions in InAs quantum dots
Optical Generation and Control of Quantum Coherence in Semiconductor Nanostructures, 9--24 (2010).
T. Grange | R. Ferreira | G. Bastard
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Electric g tensor control and spin echo of a hole-spin qubit in a quantum dot molecule
New Journal of Physics 12 (2010) 093012
R. Roloff | T. Eissfeller | P. Vogl | W. Pötz
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Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation
J. Appl. Phys. 108, 083510 (2010)
O. Moshe | D. H. Rich | S. Birner | M. Povolotskyi | B. Damilano | J. Massies
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Terahertz Quantum Cascade Lasers based on Type II InGaAs/GaAsSb/InP
Applied Physics Letters 97, 261110 (2010)
C. Deutsch | A. Benz | H. Detz | P. Klang | M. Nobile | A. M. Andrews | W. Schrenk | T. Kubis | P. Vogl | G. Strasser | K. Unterrainer
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The non-equilibrium Green's function method: an introduction
Journal of Computational Electronics 9, 237-242 (2010)
P. Vogl | T. Kubis
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Asymmetry between absorption and photoluminescence line shapes of TPD: Spectroscopic fingerprint of the twisted biphenyl core
J. Phys. Chem. A 113, 315 (2009)
R. Scholz | L. Gisslen | C. Himcinschi | I. Vragovic | E. M. Calzado | E. Louis | E. S. Maroto | M. A. Diaz-Garcia
Carrier transport in THz quantum cascade lasers: Are Green's functions necessary?
Journal of Physics: Conference Series 193 (2009) 012026
A. Mátyás | T. Kubis | P. Lugli | C. Jirauschek
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Comparison between semiclassical and full quantum transport analysis of THz quantum cascade lasers
Physica E 42, 2628–2631 (2010)
A. Mátyás | T. Kubis | P. Lugli | C. Jirauschek
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Crystallochromy of perylene pigments: Interference between Frenkel excitons and charge-transfer states
Phys. Rev. B 80, 115309 (2009).
L. Gisslen | R. Scholz
Full-band envelope function approach for type-II broken-gap superlattices
Physical Review B 80, 035304 (2009)
T. Andlauer | P. Vogl
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Gate control of low-temperature spin dynamics in two-dimensional hole systems
Physical Review B 80, 035325 (2009)
M. Kugler | T. Andlauer | T. Korn | A. Wagner | S. Fehringer | R. Schulz | M. Kubová | C. Gerl | D. Schuh | W. Wegscheider | P. Vogl | C. Schüller
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How periodic are terahertz quantum cascade lasers?
Journal of Physics: Conference Series 193 (2009) 012063
T. Kubis | P. Vogl
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Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots
European Physical Journal B 67, 51-56 (2009).
V. Preisler | T. Grange | R. Ferreira | et al.
Online Reference
Long lifetimes of quantum-dot intersublevel transitions in the terahertz range
Nature Materials 8, 803-807 (2009).
E. A. Zibik | T. Grange | B. A. Carpenter | et al
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Metal/organic interface formation studied in situ by resonant Raman spectroscopy
in: Physical and Chemical Aspects of Organic Electronics, ed. by C. Wöll, Wiley-VCH (Weinheim 2009), ch. 13.
G. Salvan | B. A. Paez | D. R. T. Zahn | L. Gisslen | R. Scholz
Nonequilibrium Green's function calculation for four-level scheme terahertz quantum cascade lasers
Appl. Phys. Lett. 94, 151109 (2009)
H. Yasuda | T. Kubis | P. Vogl | N. Sekine | I. Hosako | K. Hirakawa
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Predictive Quantum Theory of Current and Optical Gain in Quantum Cascade Lasers
Laser Physics 19, 762 (2009)
T. Kubis | P. Vogl
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Theory of non-equilibrium quantum transport and energy dissipation in terahertz quantum cascade lasers
Physical Review B 79, 195323 (2009)
T. Kubis | C. Yeh | P. Vogl | A. Benz | G. Fasching | C. Deutsch
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Theory of relaxation and decoherence of intersublevel transitions in semiconductor quantum dots
Journal of Physics: Conference Series 193, 012129 (2009).
T. Grange | R. Ferreira | G. Bastard
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Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration
Microelectronics Journal 39, 485 (2008)
M. Brehm | T. Suzuki | Z. Zhong | T. Fromherz | J. Stangl | G. Hesser | S. Birner | F. Schäffler | G. Bauer
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Exciton phonon coupling in diindenoperylene thin films
Phys. Rev. B 78, 085210 (2008)
U. Heinemeyer | R. Scholz | L. Gisslen | M. I. Alonso | J. O. Osso | M. Garriga | A. Hinderhofer | M. Kytka | S. Kowarik | A. Gerlach | F. Schreiber
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
Journal of Applied Physics 104, 093501 (2008)
P. K. Kandaswamy | F. Guillot | E. Bellet-Amalric | E. Monroy | L. Nevou | M. Tchernycheva | A. Michon | F. H. Julien | E. Baumann | F. R. Giorgetta | D. Hofstetter | T. Remmele | M. Albrecht | S. Birner | L. S. Dang
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Gauge-invariant discretization in multiband envelope function theory and g factors in nanowire dots
Physical Review B 78, 075317 (2008)
T. Andlauer | R. Morschl | P. Vogl
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Microscopic theory of spin-filtering in non-magnetic semiconductor nanostructures
phys. stat. sol. (c) 5, 290 (2008)
T. Kubis | P. Vogl
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Modelling absorption and photoluminescence of TPD
J. Lumin. 128, 845-7 (2008)
I. Vragovic | E. M. Calzado | M. A. D. Garcia | C. Himcinschi | L. Gisslen | R. Scholz
Non-equilibrium quantum transport theory: Current and gain in quantum cascade lasers
J. Comput. Electron. 7, 432 (2008)
T. Kubis | C. Yeh | P. Vogl
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Electronic structure and transport for nanoscale device simulation
in: "Materials for Tomorrow. Theory, Experiments and Modelling" (Springer Series in Materials Science), ed. by S. Gemming, M. Schreiber, J.B. Suck, Springer (2007), pp 123-146
A. Trellakis | P. Vogl
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Polaron relaxation in self-assembled quantum dots: Breakdown of the semiclassical model
Phys. Rev. B 76, 241304(R) (2007)
T. Grange | R. Ferreira | G. Bastard
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Self-consistent quantum transport theory: Applications and assessment of approximate models
J. Comput. Electron. 6, 183 (2007)
T. Kubis | P. Vogl
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Singlet and triplet polaron relaxation in doubly charged self-assembled quantum dots
New J. Phys. 9 259 (2007)
T. Grange | E. Zibik | R. Ferreira et al
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Theory of semiconductor quantum-wire based single- and two-qubit gates
Phys. Rev. B 76, 195301 (2007)
T. Zibold | P. Vogl | A. Bertoni
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Three-Dimensional Si/Ge Quantum Dot Crystals
Nano Letters 7 (10), 3150 (2007)
D. Grützmacher | T. Fromherz | C. Dais | J. Stangl | E. Müller | Y. Ekinci | H. H. Solak | H. Sigg | R. T. Lechner | E. Wintersberger | S. Birner | V. Holý | G. Bauer
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Efficient Solution of the Schrödinger-Poisson Equations in Semiconductor Device Simulations
LSSC 2005, Lecture Notes in Computer Science 3743, 602 (2006)
A. Trellakis | T. Andlauer | P. Vogl
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Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs
Appl. Phys. Lett. 89, 023103 (2006)
K. H. Lee | J. H. Na | R. A. Taylor | S. N. Yi | S. Birner | Y. S. Park | C. M. Park | T. W. Kang
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Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs
Nanotechnology 17, 5754 (2006)
K. H. Lee | S. Birner | J. H. Na | R. A. Taylor | S. N. Yi | Y. S. Park | C. M. Park | T. W. Kang
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BioMOCA - a Boltzmann transport Monte Carlo model for ion channel simulation
Molecular Simulation 31 (2-3), 151-171 (2005)
T. A. V. D. Straaten | G. Kathawala | A. Trellakis | R. S. Eisenberg | U. Ravaioli
Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for InxGa1-xAs and InxGa1-xAs1-yNy quantum wells
Phys. Rev. B 72, 155324 (2005)
M. Galluppi | L. Geelhaar | H. Riechert | M. Hetterich | A. Grau | S. Birner | W. Stolz
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Contact block reduction method for ballistic transport and carrier densities of open nanostructures
Phys. Rev. B 71, 245321 (2005)
D. Mamaluy | D. Vasileska | M. Sabathil | T. Zibold | P. Vogl
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Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer
Virtual Journal of Nanoscale Science Technology 12 (1) (2005) &
Phys. Rev. B 71, 245316 (2005)
O. Schumann | S. Birner | M. Baudach | L. Geelhaar | H. Eisele | L. Ivanova | R. Timm | A. Lenz | S. K. Becker | M. Povolotskyi | M. Dähne | G. Abstreiter | H. Riechert
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Embedded atom simulations of titanium systems with grain boundaries
Phys. Rev. B 71, 205409 (2005)
T. Hammerschmidt | A. Kersch | P. Vogl
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Modeling of Purely Strain-Induced CEO GaAs/In(_.16)Al(_.84)As Quantum Wires
Proc. 5th Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 1 (2005)
S. Birner | R. Schuster | M. Povolotskyi | P. Vogl
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Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers
Proceedings of 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 547 (2005)
K. H. Lee | S. Birner | J. H. Na | R. A. Taylor | J. W. Robinson | J. H. Rice | Y. S. Park | C. M. Park | T. W. Kang
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Prediction of entanglement detection by I-V characteristics
Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago,USA, July 25-19, 2005, pp. 15-18, Springer Proceedings in Physics, vol. 110.
T. Zibold | P. Vogl | A. Bertoni
Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement
Proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 898-899 (2005)
R. Schuster | H. Hajak | M. Reinwald | W. Wegscheider | D. Schuh | M. Bichler | S. Birner | P. Vogl | G. Abstreiter
Self-consistent quantum transport theory of carrier capture in heterostructures
Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, vol. 110, pp. 369-372
T. Kubis | A. Trellakis | P. Vogl
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Compact expression for the angular dependence of tight-binding Hamiltonian matrix elements
Phys. Rev. B 69, 233101 (2004)
A. V. Podolskiy | P. Vogl | Download includes Mathematica+Maple Code
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Contact block reduction method and its application to a 10 nm MOSFET device
Semicond. Sci. Technol. 19, S118 (2004)
D. Mamaluy | A. Mannargudi | D. Vasileska | M. Sabathil | P. Vogl
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Directional effects on bound quantum states for trench oxide quantum wires on (100)-silicon
Solid-State Electronics 48, 367 (2004)
A. Trellakis | U. Ravaioli
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Electronic and optical properties of [N11] grown nanostructures
phys. stat. sol. (c) 1 (6), 1511 (2004)
M. Povolotskyi | A. D. Carlo | S. Birner
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Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces
Semicond. Sci. Technol. 19, S351 (2004)
M. Povolotskyi | J. Gleize | A. D. Carlo | P. Lugli | S. Birner | P. Vogl | D. Alderighi | M. Gurioli | A. Vinattieri | M. Colocci | S. Sanguinetti | R. Nötzel
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Prediction of a realistic quantum logic gate using the contact block reduction method
Semicond. Sci. Technol. 19, S137 (2004)
M. Sabathil | D. Mamaluy | P. Vogl
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Quantum-confined Stark shifts of charged exciton complexes in quantum dots
Phys. Rev. B 70, 201308(R) (2004)
J. J. Finley | M. Sabathil | P. Vogl | G. Abstreiter | R. Oulton | A. I. Tartakovskii | D. J. Mowbray | S. Skolnick | S. L. Liew | A. G. Cullis | M. Hopkinson
Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots
Physica E 21, 199-203 (2004)
J. J. Finley | M. Sabathil | R. Oulton | A. I. Tartakovskii | D. J. Mowbray | M. S. Skolnick | S. Liew | M. Migliorato | M. Hopkinson | P. Vogl
Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces
IEEE Transactions on Nanotechnology 3, 124 (2004)
M. Povolotskyi | A. D. Carlo | P. Lugli | S. Birner | P. Vogl
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Two-dimensional quantum effects and structural optimization of FinFETs with two-dimensional Poisson-Schrödinger solver
J. Korean Phys. Soc. 45 (5), 1384-1390 (2004)
K. Kim | O. Kwon | J. Seo | T. Won | S. Birner | A. Trellakis
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Two-dimensional quantum-mechanical modeling for strained silicon channels of double-gate MOSFETs
J. Korean Phys. Soc. 45, S909-S913 (2004)
K. Kim | O. Kwon | J. Seo | T. Won | S. Birner | R. Oberhuber | A. Trellakis
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Efficient computational method for ballistic currents and application to single quantum dots
Journal of Computational Electronics 2, 269 (2003)
M. Sabathil | S. Birner | D. Mamaluy | P.Vogl
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Efficient method for the calculation of ballistic quantum transport
J. Appl. Phys. 93, 4628 (2003)
D. Mamaluy | M. Sabathil | P. Vogl | Download includes Code
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Microscopic description of nanostructures grown on (N11) surfaces
Journal of Computational Electronics 2, 275 (2003)
M. Povolotskyi | J. Gleize | A. D. Carlo | P. Lugli | S. Birner | P. Vogl
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nextnano³ - Software für neuartige Nano Devices
TUM Mitteilungen 2 - 03/04, TU Munich, 36 (2003)
S. Birner
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Non-perturbative solution for Bloch electrons in constant magnetic fields
Phys. Rev. Letters 91, 056405-1 (2003)
A. Trellakis
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Resonant spin-orbit interactions and phonon spin relaxation rates in superlattices
in Physics of Semiconductors (Eds. A. R. Long and J. H. Davies, Institute of Physics Publ., Bristol, 2003), P305 (2002)
J. A. Majewski | P. Vogl
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Dielectric response of molecules in empirical tight-binding theory
Phys. Rev. B 65, 035202 (2002)
T. B. Boykin | P. Vogl
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Full-band approaches for the quantum treatment of nanometer-scale MOS structures
Physica B 314, 345-349 (2002)
F. Sacconi | M. Povolotskyi | A. D. Carlo | P. Lugli | M. Städele | C. G. Strahberger | P. Vogl
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Inter- and intra-subband LO phonon emission rates in GaAs/AlGaAs quantum disks
Physica B 314, 127-131 (2002)
N. Suzumura | M. Yamaguchi | N. Sawaki | P. Vogl
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Multiscale approaches for metal thin film growth
Computational Materials Science 24, 58-65 (2002)
P. Vogl | U. Hansen | V. Fiorentini
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Resonant effect of Zener tunneling current
Phys. Rev. B 65, 233308 (2002)
M. Morifuji | T. Imai | C. Hamaguchi | A. D. Carlo | P. Vogl | G. Boehm | G. Traenkle | G. Weimann
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Self-similar optical absorption spectra in high magnetic fields
in Physics of Semiconductors (Eds. A. R. Long and J. H. Davies, Institute of Physics Publ., Bristol, 2003), E1.3 (2002)
P. Vogl | C. Strahberger
Three-dimensional spectral solution of the Schr?dinger equation for arbitrary band structures
Journal of Applied Physics 92, 3711 (2002)
U. Ravaioli | A. Trellakis
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Accelerated dynamics simulations of interstitial-cluster growth
Solid State Communications 120 (7-8), 279 (2001)
S. Birner | J. Kim | D. A. Richie | J. W. Wilkins | A. F. Voter | T. Lenosky
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First principles study of spin-electronics: Zero-field splitting in superlattices
in: Proc. 25th. Int. Conf. Semicond., Springer, Heidelberg, (2001)
J. A. Majewski | P. Vogl | P. Lugli
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Thermodynamic processes of Si-interstitial clusters
Computational Nanoscience 2001, 117 (2001)
J. Kim | S. Birner | D. A. Richie | J. W. Wilkins | A. F. Voter
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Computational issues in the simulation of semiconductor quantum wires
Computer Methods in Applied Mechanics and Engineering 181, 437 (2000)
A. Trellakis | U. Ravaioli
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Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures
Phys. Rev. B. 62, 7289 (2000)
C. Strahberger | P. Vogl
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Norm-conserving pseudopotentials in the exact exchange Kohn-Sham formalism
J. Phys. Condensed Matter 12, 6783 (2000)
M. Moukara | M. Städele | J. A. Majewski | P. Vogl | A. Görling | Code is available, contact Peter Vogl
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Atomistic modeling of large-scale metal film growth fronts
Phys. Rev. B 59, R7856 (1999)
U. Hansen | P. Vogl | V. Fiorentini
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Impact of piezo- and pyroelectric fields onto transport properties and device performance in III-nitride heterostructure devices
in: Proc. of the 24th Int. Conf. on the Physics of Semiconductors, 1998, Jerusalem, Israel, Ed. D. Gershoni, World Scientific (1999), pp 1315
G. Zandler | R. Oberhuber | F. Compagnone | P. Vogl
Quasiharmonic versus exact surface free energies of al: A systematic study employing a classical interatomic potential
Phys. Rev. B 60, 5055 (1999)
U. Hansen | P. Vogl | V. Fiorentini
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Dichtefunktionaltheorie mit exaktem Austausch: Ergebnisse fuer Halbleitern
Verhandl. DPG(VI) 33, 762 (1998)
M. Staedele | M. Moukara | A. Goerling | P. Vogl
Exact Kohn-Sham exchange potential and gap problem in semiconductors
In: Conference Proceedings Vol. 61 Advances in Computational Materials Science-II, (SIF, Bologna, 1998), pp 59
M. Staedele | J. A. Majewski | P. Vogl | A. Goerling
Hydrogen passivation of silicon surfaces: A classical molecular dynamics study
Phys. Rev. B, 13295 (1998)
U. Hansen | P. Vogl
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III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications
in: Advances in Computational Materials Science - II 61, 71-75 (1998), Ed. by V. Fiorentini and F. Meloni, Società Italiana di Fisica, Editrice Compositori, Bologna, Italy (1998)
G. Zandler | J. A. Majewski | M. Städele | P. Vogl | F. Compagnone
III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications
in: Conference Proceedings Vol. 61 Advances in Computational Materials Science-II, (SIF, Bologna, 1998), pp 71
G. Zandler | J. A. Majewski | M. Staedele | P. Vogl | F. Compagnone
Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs
in: Proc. of the 28th European Solid State Device Research Conference, 8-10 Sept. 1998, Bordeaux, France, Eds.: A. Touboul, Y. Danto, J.-P. Klein and H. Grünbacher, Edition Frontieres, 75004 Paris - France, (1998), pp. 524 - 527
R. Oberhuber | G. Zandler | P. Vogl
Mobilty of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
Appl. Phys. Lett. 73(6), 818-820 (1998)
R. Oberhuber | G. Zandler | P. Vogl
Norm-conserving pseudopotentials in the exact exchange Kohn-Sham formalism
in: Proceedings of the 24th Int. Conf. on the Physics of Semicond., 1998, Jerusalem, Israel, World Scientific 1998
M. Moukara | M. Städele | J. A. Majewski | P. Vogl | A. Görling
Polarization and band offsets of stacking faults in AlN and GaN
MRS Internet J. Nitride Semicond. Res. 3, 21 (1998)
J. A. Majewski | P. Vogl
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Stability and band offsets of AlN/GaN heterostructures: Impact on device performance
Semicond. Science Technol. 13 (8A), A90 - A92 (1998)
J. A. Majewski | G. Zandler | P. Vogl
Stability and band offsets of AlN/GaN heterostructures: Impact on device performance
Semicond. Sci. Technol. 13, A90 (1998)
J. A. Majewski | G. Zandler | P. Vogl
Theory of internal polarization fields in GaN and AlN interfaces and stacking fault
in: Proceedings of the 24th Int. Conf. on the Physics of Semicond., 1998, Jerusalem, Israel, World Scientific, 1998
J. A. Majewski | P. Vogl
A Monte Carlo transport model based on spherical harmonics expansion of the valence bands
in Simulation of Semiconductor Devices and Processes, Vol. 6, Eds.: H. Ryssel and P. Pichler (Springer, Wien, 1997), p. 396-399
H. Kosina | M. Harrer | P. Vogl | S. Selberherr
Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
Mat. Res. Soc. Symp. Proc. 449, 917-922 (1997)
J. Majewski | M. Städele | P. Vogl
Enhanced Coherent Zener Tunneling in Indirect Gap Semiconductors
Phys. Stat. Sol. (b) 204, 420-423 (1997)
A. Di Carlo | P. Lugli | A. Kavokin | M. Vladimirova | P. Vogl
Prospects of Ga/In/Al-N nanometer devices: Electronic structure, scattering rates, and high field transport
Phys. Stat. Sol. (b) 204, 133 - 135 (1997)
G. Zandler | J. Majewski | M. Städele | P. Vogl | F. Compagnone
Stability and band offsets of polar GaN/SiC(001) and AlN/SiC (001) interfaces
Phys. Rev. B 56, 6911-6920 (1997)
M. Städele | J. Majewski | P. Vogl
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Stability and Band Offsets of SiC/GaN, SiC/AlN, and AlN/GaN heterostructures
Mat. Res. Soc. Symp. Proc. 449, 887-892 (1997)
J. Majewski | M. Städele | P. Vogl
Cellular automata for device simulation - concepts and applications
in: Proc. of the 1996 Int. Conf. on Simulation of Semiconductor Processes and Devices, Tokyo, Business Center for Academic Societies Japan, Tokyo 1996, pp 39
G. Zandler | M. Saraniti | A. Rein | P. Vogl
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Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
MRS Intern. J. Nitride Semicond. Res. 1, 30 (1996)
J. A. Majewski | M. Städele | P. Vogl
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Exact exchange potential for semiconductors
in: Proc. 23rd Int. Conference on the Physics of Semiconductors, ed. by M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996, pp 613
M. Städele | J. A. Majewski | P. Vogl | A. Görling
Microscopic analysis of intrinsic noise in semiconductor devices by the cellular automaton method
in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors, ed. by K. Hess, J. P. Leburton, and U. Ravaioli. Plenum Publishing Coop., New York - London 1996, pp 497
A. Rein | G. Zandler | M. Saraniti | P. Vogl
Optical absorbance of oriented thin films
Synth. Metals 76, Issues 1-3, 177-179, (1996)
A. Niko | F. Meghdadi | G. Leising | C. Ambrosch-Draxl | P. Vogl
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Stability and band offsets of SiC/GaN, SiC/AlN, and AlN/GaN heterostructures
in: Proc. 23rd Int. Conference on the Physics of Semiconductors, ed. by M. Scheffler und R. Zimmermann. World Scientific, Singapore 1996, pp 983
A. Majewski | M. Städele | P. Vogl
Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode
Physica B 227, Issues 1-4, 206-209 (1996)
H. Nagasawa | K. Murayama | M. Morifuji | A. D. Carlo | P. Vogl | G. Böhm | G. Tränkle | G. Weimann | C. Hamaguchi
Theory of electronic and optical properties of magnetoexcitons in quantum-well wires
Phys. Rev. B 54, 17003 (1996)
M. Graf | P. Vogl | A. B. Dzyubenko
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Wannier-Stark oscillations in Zener tunneling currents
Solid-State Electronics 40, 245 (1996)
H. Nagasawa | K. Murayama | M. Yamaguchi | M. Morifuji | C. Hamaguchi | A. D. Carlo | P. Vogl | G. Böhm | G. Tränkle | G. Weimann
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A relativistic self-interaction-free density functional formalism
Phys. Rev. A52, 282 (1995)
M. Rieger | P. Vogl
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Binding of electrons and holes at quantum wires formed by T-intersecting quantum wells
Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates, Rottach-Egern, Germany, Feb. 20 - 24 (1995). Eds.: K. Eberl, P. M. Petroff, P. Demeester. Kluwer Academic Publishers, Dordrecht 1995. 93-100. (NATO ASI Ser.:E; Vol. 298).
L. Pfeiffer | H. Baranger | D. Gershoni | K. Smith | W. Wegscheider
Electromagnetic fields and dielectric response in empirical tight binding theory
Phys. Rev. B 51, 4940 (1995)
M. Graf | P. Vogl
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Electronic and structural properties of semiconductors with nonlocal exchange-correlation-potentials
in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 189, (1995)
A. Seidl | M. Rieger | J. A. Majewski | P. Vogl
First-principles studies of structural and optical properties of crystalline poly (para phenylene)
Phys. Rev. B51, 9668 (1995)
C. Ambrosch-Draxl | J. A. Majewski | P. Vogl | G. Leising
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Grenzflächenstabilität und elektronische Struktur von SiC/GaN-(001)-Übergittern
Verhandl. DPG (VI), 30, 1131 (1995)
M. Städele | P. Vogl
Mikroskopische Analyse des Rauschverhaltens in Bauelementen mit der Methode Zellulärer Automaten
Verhandlg. der Dt. Phys. Ges. (VI) 30, 1306, Berlin (1995)
A. Rein | G. Zandler | M. Saraniti | P. Vogl
Optical and electronic properties of crystalline poly(para-phenylene) by first-principles calculations and experimental results
C. Ambrosch-Draxl | J. A. Majewski | P. Vogl | G. Leising | R. Abt | K. D. Aichholzer | 4. (1995)
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SiGe Quantum Wells on (110) Si Grown by Molecular Beam Epitaxy
J. of Crystal Growth 150, 1050-1054 (1995)
(Proc. of the 8th Int. Conf. on Molecular Beam Epitaxy, Osaka, Japan, August 29 - September 2, 1994)
J. Brunner | M. Gail | G. Abstreiter | P. Vogl
Stability and band offsets of heterovalent SiC/GaN interfaces
Acta Physics Polonica A88, (1995)
M. Städele | J. A. Majewski | P. Vogl
Wannier-Stark localization in superlattices
Jap. J. Appl. Phys. 34, 4519 (1995)
C. Hamaguchi | M. Yamaguchi | H. Nagasawa | M. Morifuji | A. Di Carlo | P. Vogl | G. Böhm | G. Tränkle | G. Weimann | Y. Nishikawa | S. Muto
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Cellular automaton simulations of planar doped barrier field effect transistor in silicon
in: Proc. of Int. Conf. on Computational Electronics, ed. by S.M. Goodnick, Corvallis (OR) (1994) pp 7
A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl
Distribution of light emission from Hot Carriers in GaAs PIN diodes - experiments and Monte Carlo analysis
Semicond. Sci. Technol. 9, 671 (1994)
R. Ostermeier | P. Lugli | D. Liebig | F. Koch | P. Vogl | M. Poebl | W. Harth
Impact ionization and associated light emission phenomena in GaAs devices: A Monte Carlo study
in: Proc. 20th Int. Symp. on GaAs and Related Compounds, Ed. H. S. Rupprecht and G. Weimann, Institute of Physics Publishing Ltd., Bristol, Inst. Phys. Conf. Ser. No. 136, 715 (1994)
G. Zandler | A. Di Carlo | P. Vogl | P. Lugli
Light emission from ordered group-IV materials:concepts and prospects
in: Quantum Well and Superlattice Physics V (edited by G. H. Doehler, and E. S. Koteles, SPIE, Bellingham, 1994), SPIE Proc. Vol. 2139, pp 168
M. Rieger | P. Vogl | J. A. Majewski
Monte Carlo simulation of minority carrier transport and light emission phenomena in GaAs devices
Semicond. Sci. Technol. 9, 666 (1994)
G. Zandler | A. Di Carlo | P. Vogl | P. Lugli
Nanometer-resolved photocurrent and local minority carrier transport in GaAs P-N junctions
Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 1. 249-252.
G. Zandler | G. Kolb | K. Karraï | G. Abstreiter | P. Vogl
Theory of Zener tunneling and Stark ladders in semiconductors
Semicond. Sci. Technol. 9, 497 (1994)
A. Di Carlo | P. Vogl
Theory of Zener tunneling and Wannier-Stark states in semiconductors
Phys. Rev. B 50, 8358 (1994)
A. Di Carlo | P. Vogl | W. Pötz
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Transport simulations of ultrashort planar doped barrier field effect transistors
in: Proc. 24th European Solid State Device Research Conference, Ed.: C. Hill and P. Ashburn, Edition Frontieres, Gif-sur-Yvette Cedex - France, 1994, pp 775
A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl
Can cellular automata methods compete with Monte Carlo semiconductor device simulations?
Proc. 23rd European Solid State Device Research Conference 1993, Eds.: J. Borel, P. Gentil, J. P. Noblanc, A. Nouailhat, M. Verdone, Edition Frontieres, Gif-sur-Yvette Cedex, France, p. 21 (1993)
G. Zandler | A. Rein | M. Saraniti | P. Vogl | P. Lugli
Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates
Phys. Rev. B 48 (19), 14276 (1993)
M. Rieger | P. Vogl
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Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates - Erratum
Phys. Rev. B 50, 8138 (1994)
M. Rieger | P. Vogl
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How to Convert Group-IV Semiconductors into Light Emitters
Physica Scripta T49, 476-482 (1993)
(Proc. of 13th EPS, Regensburg, March 19 - April 2, 1993)
P. Vogl | M. M. Rieger | J. A. Majewski | G. Abstreiter
Electronic structure and optical properties of short-period ?-SnnGen superlattices
Surface Science 267, 83-86 (1992)
P. Vogl | J. Olajos | W. Wegscheider | G. Abstreiter
Infrared Optical Properties and Band Structure of *-Sn/Ge Superlattices on Ge Substrates
Phys. Rev. Lett. 67, (22), 3164-3167 (1991)
J. Olajos | P. Vogl | W. Wegscheider | G. Abstreiter
Highly Strained ?-Sn/Ge Superlattices - New Man-made Semiconductors
Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990.
Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1685-1688.
W. Wegscheider | K. Eberl | U. Menczigar | J. Olajos | G. Abstreiter | P. Vogl
A semi-empirical tight-binding theory of the electronic structure of semiconductors
J. Phys. Chem. Solids 44, 365-378 (1983)
P. Vogl | H. P. Hjalmarson | J. D. Dow
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Chemical Trends of Deep Impurity Levels in Covalent Semiconductors
Adv. in Solid State Physics (Festkörperprobleme) XXI (ed. by J. Treusch, Vieweg, Braunschweig, 1981), p. 191-219.
P. Vogl
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Theory of one- and two-phonon deformation potentials in semiconductors
Journal de Physique C7, 431 (1981)
P. Kocevar | K. Baumann | P. Vogl | W. Pötz
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Dynamical effective charges in semiconductors:
a pseudopotential approach
J. Phys. C: Solid State Phys, Vol. 11, 1978, p. 251-262
P. Vogl
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