nextnano.net

Welcome to our nano device simulator nextnano.net. The code is based on nextnano++ which was written in C++. nextnano.net is completely rewritten in C# and benefits from exciting new features and enhancements of the .NET Framework from Microsoft. We also implemented a new and powerful XML/XSD input file format (XmlStudio).

Please refer to the documention of nextnano++ for further details.

nextnano.net simulates quantum well, quantum wires, quantum dots, quantum cascade lasers, resonant tunneling diodes (RTDs), QWIPs, MOSFETs, high-electron mobility transistors (HEMTs) and many more...

nextnano.net features

  • includes group IV materials (Si, Ge, SiGe) and all III-V materials, its ternaries and quaternaries; the nitrides are available in the zincblende and wurtzite crystal structure
  • flexible structures and geometries (1D, 2D and 3D)
  • includes strain, piezo and pyroelectric charges
  • growth directions along [001], [011], [111], [211], ... in short along any crystallographic direction
  • fully quantum mechanically, based on the 8-band k.p model; equilibrium and nonequilibrium, calculation of current close to equilibrium (semi-classical), ballistic transport
  • NEGF formalism, including CBR calculations, Büttiker Probes, and calculations with fully self-consistent non-equilibrium Green's functions.
  • magnetic fields

nextnano.net documentation

nextnano is a console application, which is run with an input file as command line parameter, or, alternatively, it can be run by the nextnanomat graphical user interface available from the nextnano company. The input file specifies the device that is calculated.

Input file

The input file specifies all properties of the device, such as geometry, material composition, grid, contacts, etc.
Furthermore, it sets all parameters that are needed to define the program flow of nextnano.

Output

nextnano exports its results to a directory and in a certain format that have to be specified in the section output of the input file. The nextnano installation provides some example templates that can be easily run, to get familiar with the program. All material properties that are needed for simulation are specified as material parameters in database files, which are provided with the nextnano installation. The database covers a large amount of zincblende (all III-V and diamond-type like Si, Ge, ...), wurtzite (GaN, AlN, InN, ...) materials, and their alloys. The 1D, 2D and 3D output can be visualized by the nextnanomat graphical user interface which is available from the nextnano company.

TUM Technische Universität München TUM Technische Universität München Physik Department Elektrotechnik und Informationstechnik TUM Technische Universität München
 

News at the WSI

01 Dec 2011

CeNS publication award for L. Prechtel et al.   more

02 Nov 2011

Rohde & Schwarz Award for Jia Chen   more

24 Oct 2011

Prof. Jonathan Finley receives Prize for Good Teaching 2010 from the Bavarian Ministry for Science, Research and Arts.   more

23 Oct 2011

Diploma student at the WSI won a Best Poster Award at SemiconNano2011   more

17 Oct 2011

Best Student paper award for Tobias Gruendl   more

Forthcoming seminars

February 23, 2012

(Al,Ga,In)N/GaN-based heterostructures: Physics and devices   more