Publications at the Walter Schottky Institute

Energy Saving Strategies for VCSEL ONUs

OFC / NFOEC, March 4-8, 2012, Los Angeles, CA, USA

E. Wong | M. Mueller | P. I. Dias | C. A. Chan | M. C. Amann

Energy-Efficient High-Speed Short-Cavity VCSELs

Invited Paper: OFC / NFOEC, March 4-8, 2012, Los Angeles, CA, USA

M. C. Amann | E. Wong | M. Mueller

Enlarged magnetic focusing radius of photoinduced ballistic currents

arXiv:1201.3333 (2012).

Laser-sintered thin films of doped SiGe nanoparticles

arXiv:1201.4370v1

Low-cost post-growth treatments of crystalline silicon nanoparticles improving surface and electronic properties

Advanced Functional Materials, accepted (2012).

Nonlinear GaInAs/AlInAs/InP quantum cascade laser sources for wavelength generation in the 2.7-70 µm wavelength range

Proc. of SPIE Photonics West, vol. 8268, San Francisco, Ca, USA (2012) (invited talk)

Nuclear Spins of Ionized Phosphorus Donors in Silicon

Phys. Rev. Lett. 108, 027602 (2012)

L. Dreher | F. Hoehne | M. Stutzmann | M. S. Brandt

Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers

Semiconductor Science and Technology, vol.27 (3), 032001, 2012

K. Vizbaras | M. C. Amann

Room-temperature type-I GaSb-based lasers in the 3.0 – 3.7 µm wavelength range

SPIE Photonics West 2012, San Francisco, California, 2012 (Invited talk)

Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation

Physica Status Solidi (c), Vol. 9, No. 2, pp. 298-301, (2012)

Time-resolved ultrafast photocurrents and terahertz generation in freely suspended graphene

Nature Communications 3, 646 (2012).

Tunable photo-emission from an excitonic antitrap

Nano Lett. 12, 326 (2012).

Type-II InP-based lasers emitting at 2.55 µm

Applied Physics Letters, vol.100 (4), 041109, 2012

Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence

Physical Review B 85, 045309 (2012)

Vertical Cavity Surface Emitting Laser Transmitters for Energy Efficient Broadband Access Networks

IEEE International Conference on Communications - Optical Networks and Systems, June 10-15, Ottawa, Canada, 2012.

E. Wong | M. Mueller | I. P. Dias | C. A. Chan | M. C. Amann

102 nm Continuous Single-Mode Tuning with a Surface Micro-Machined tunable VCSEL

VCSEL-Day, European Workshop on VCSELs (oral presentation), May 12-13, Toulouse, (2011)

10Gbit/s Direct Modulated Long-Wavelength VCSELs for Upstream Hybrid TDMA/WDM PON

Photonics Ireland 2011, September 7-9, Dublin, Ireland, (2011).

1550 nm High-Speed Short-Cavity VCSELs

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, No. 5, pp. 1158-1166, Sept./Oct., 2011.

1550nm High-Speed Short-Cavity VCSELs

VCSEL-Day, European Workshop on VCSELs (oral presentation), May 12-13, Toulouse, (2011).

M. Mueller | E. A.

3.6 µm GaSb-based type-I lasers with quinternary barriers, operating at room temperature

IET Electronics Letters, vol. 47, No. 17, pp. 980-981, 2011

K. Vizbaras | M. C. Amann

40 Gbit/s modulation of 1550 nm VCSEL

Electronics Letters, Vol. 47, No. 4, pp. 270 - 271, Feb. 2011.

A New Molecular Architecture for Molecular Electronics

Special Insert from DFG in Angew. Chem. Int. Ed. Engl. 2011, 37, A11-A16

A Pore-Cavity-Pore Device to Trap and Investigate Single Nanoparticles and DNA Molecules in a Femtoliter Compartment: Confined Diffusion and Narrow Escape

Nano Letters 11 (4) 1561–1567 (2011)

D. Pedone | M. Langecker | G. Abstreiter | U. Rant

Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

Appl. Phys. Lett. 98, 123114 (2011)

a-Ge and a-Si as dielectric mirror materials for long-wavelength optoelectronic devices: a comparative study

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2011).

S. Arafin | K. Klein | K. Vizbaras | M. C. Amann

Antimony-based tunable diode lasers for trace-gas sensing

Fire & Safety Group Magazine, FS-World Newsletter, Aug. 2010

S. Arafin | M. C. Amann

Assessment of approximations in nonequilibrium Green’s function theory

Phys. Rev. B 83, 195304 (2011)

Broad gain bandwidth injectorless quantum-cascade lasers with a step well design

Appl. Phys. Lett. 98, 131113 (2011)

H. Li | S. Katz | G. Boehm | M. C. Amann

Broad gain injectorless quantum-cascade lasers with low threshold emitting around 8.6 µm

Asia Communications and Photonics Conference, November 13-16, Shanghai, China (2011).

H. Li | S. Katz | G. Boehm | M. C. Amann

Chemical control of the charge state of nitrogen-vacancy centers in diamond

Phys. Rev. B 83, 081304(R) (2011)

Chirp Characterization of a VCSEL using the Fiber Transfer Function Method

15th Canadian Semiconductor Science and Technology Conference, August 15 -17, Vancouver BC, Canada, (2011).

Coherent control of electrical currents in semiconductor nanowires/-tubes

Phys. Status Status Solidi C 8, No. 4, 1224 (2011).

Comparison of InP- and GaSb-based VCSELs emitting at 2.3 µm suitable for carbon monoxide detection

Journal of Crystal Growth 323, 442-445 (2011)

Comprehensive analysis of electrically- pumped GaSb-based VCSELs

Opt. Express, vol.19, no. 18, pp. 17267-17282 (2011)

Concepts and Realization of Widely Tunable InP VCSELs

International Nano-Optoelectronics Workshop (iNow) 2011, St. Petersburg & Würzburg, Russia & Germany

Winner of "Best Poster Award 2011" (First Place)

Conversion of surface plasmon polaritons into photons: visual observation

Phys. Usp., 54, 291 (2011)

Coplanar stripline antenna design for optically detected magnetic resonance on semiconductor quantum dots

Rev. Sci. Instrum. 82, 074707 (2011)

Correlation between emission intensity of self-assembled germanium islands and quality factor of silicon photonic crystal nanocavities

Physical Review B 84, 085320 (2011)

Correlation between structure and optoelectronic properties in a two-dimensional nanoparticle assembly

Phys. Status Solidi RRL 5, No. 1, 16-18 (2011).

Crystal Structure Transfer in Core/Shell Nanowires

Nano Lett. 11, 1690-1694 (2011)

Development and characterization of EIS structures based on SiO2 micropillars and pores before and after their functionalization with phosphonate films

phys. stat. sol. (a) 208, 1333 (2011)

Development and evaluation of gallium nitride-based thin films for x-ray dosimetry

Physics in Medicine and Biology 56 3215 (2011)

M. Hofstetter | J. Howgate | I. D. Sharp | M. Stutzmann | S. Thalhammer

Direct measurement of plasmon propagation lengths on lithographically defined metallic waveguides on GaAs

Journal of Applied Physics 110, 123106 (2011)

G. Bracher | K. Schraml | C. Jakubeit | M. Kaniber | J. Finley

Direct observation of a non-catalytic growth regime for GaAs nanowires

Nano Letters 11, 3848 (2011)

Directional and Dynamic Modulation of the Optical Emission of an Individual GaAs Nanowire Using Surface Acoustic Waves

Nano Letters 11, 1512 (2011)

Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN

Phys. Rev. B 84, 075315 (2011).

Effects of stacking variations on the lattice dynamics of InAs nanowires

Phys. Rev. B 84, 155301 (2011)

Efficiency enhancement in hybrid P3HT/silicon nanocrystal solar cells

Green 1, 339 (2011)

Elastically Driven Ferromagnetic Resonance in Nickel Thin Films

Phys. Rev. Lett. 106 117601 (2011)

Electrical control of the exciton-biexciton splitting in self-assembled InGaAs Quantum dots

Nanotechnology 22, 325202 (2011)

Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon using Pulsed ENDOR

Phys. Rev. Lett. 106, 187601 (2011)

F. Hoehne | L. Dreher | H. Huebl | M. Stutzmann | M. S. Brandt

Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination

Applied Physics Letters 98, 182106 (2011)

Electrically Detected Electron-Spin-Echo Envelope Modulation: A Highly Sensitive Technique for Resolving Complex Interface Structures

Phys. Rev. Lett. 106, 196101 (2011)

Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon

Phys. Rev. Lett. 106, 037601 (2011)

Electrolyte-gated organic field-effect transistors for sensing applications

Applied Physics Letters 98, 153302 (2011)

F. Buth | D. Kumar | M. Stutzmann | J. A. Garrido

Electron heating in quantum-dot structures with collective potential barriers

International Journal of High Speed Electronics and Systems 20, 143 (2011)

L. H. Chien | A. Sergeev | N. Vagidov | V. Mitin | S. Birner

Electrophoretic Time-of-Flight Measurements of Single DNA Molecules with Two Stacked Nanopores

Nano Letters 11 (11) 5002-5007 (2011)

M. Langecker | D. Pedone | F. C. Simmel | U. Rant

Electrostatically trapping indirect excitons in coupled InxGa1-xAs quantum wells

Phys. Rev. B 83, 165308 (2011)

Epitaxial upward transport of Al at the beginning of the Al-induced layer exchange process

physica status solidi (RRL) – Rapid Research Letters, 5: 172–174

B. Birajdar | T. Antesberger | M. Stutzmann | E. Spiecker

Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation

Journal of Crystal Growth 323 (2011) 480-483

Excited state quantum couplings and optical switching of an artificial molecule

Phys. Rev. B 84, 081302(R) (2011)

Exciton confinement in homo- and heteroepitaxial ZnO/Zn1-xMgxO quantum wells with x<0.1

J. Appl. Phys. 110, 093513 (2011)

Extending the spectral range of GaInAs/AlInAs/InP quantum cascade lasers by intracavity nonlinear frequency mixing

11^th International Conference on Intersubband Transitions in Quantum Wells (ITQW-2011), September 11-17, Badesi, Sardinia, (2011).

Field-Resolved Characterization of Femtosecond Electromagnetic Pulses with 400 THz Bandwidth

Optics Letters 36, 1791-1793 (2011).

S. Thunich | C. Ruppert | A. Holleitner | M. Betz

First 102 nm Ultra-Widely Tunable MEMS VCSEL Based on InP

Winner of Best Student Paper Award 2011 (First Place)

IEEE Photonics 2011 Conference (IPC11) - (formerly Photonics Society Annual Meeting), paper ThDD1, Arlington, Virginia (USA), Oct. 2011

Forming and confining of dipolar excitons by quantizing magnetic fields

Phys. Rev. B 83, 081307 (R) (2011).

Free standing modulation doped core-shell GaAs/AlGaAs hetero-nanowires

Phys. Status Solidi RRL, 5, 353 (2011)

D. Spirkoska | A. Fontcuberta i Morral | J. Dufouleur | Q. Xie | G. Abstreiter

GaAsSb:C / GaInAs:Si tunnel junctions with AlGaInAsSb:C grading for InP-based high-speed VCSELs

European Workshop on Metalorganic Vapor Phase Epitaxy, June 5-8, 2011, Wroclaw, Poland (EWMOVPE XIV)

C. Grasse | T. Gruendl | M. Mueller | R. Meyer | M. C. Amann

GaInAs/GaAsSb type-II quantum wells for up to 2.8µm light emission on InP substrate

26. DGKK Workshop, Stuttgart, Deutschland, 2011

Gain-cavity tuning and non-radiative recombination in 2.6 µm GaInAsSb VCSELs

UK Semiconductors, Sheffield, UK (2011)

GaSb and InP-based VCSELs at 2.3 µm emission wavelength for tuneable diode laser spectroscopy of carbon monoxide (Invited)

SPIE Photonics West 2011, San Francisco, CA, USA (Invited talk)

Generation of a two-photon state from a quantum dot in a microcavity

New J. Phys. 13, 113014 (2011)

E. del Valle | A. Gonzales-Tudela | E. Cancellieri | F. Laussy | C. Tejedor

Graphene Transistor Arrays for Recording Action Potentials from Electrogenic Cells

Advanced Materials 23, 5045 (2011)

High Speed Modulation of a 1.55 µm MEMS-tunable VCSEL

CLEO 2011 - Conference on Lasers and Electro Optics, BALTIMORE CONVENTION CENTER, Baltimore, Maryland, USA (2011)

High-power 200-fs Kerr-lens mode-locked Yb:YAG thin-disk oscillator

Optics Letters, Doc. ID: 156488, Posted: 14.11.2011

High-Power BCB Encapsulated VCSELs based on InP

CLEO 2011 - Conference on Lasers and Electro Optics, BALTIMORE CONVENTION CENTER, Baltimore, Maryland, USA (2011)

High-resolution electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon

Phys. Rev. B 83 235201 (2011)

High-transconductance graphene solution-gated field effect transistors

Applied Physics Letters 99, 033503 (2011)

Hydrophobic Interaction and Charge Accumulation at the Diamond-Electrolyte Interface

Physical Review Letters 106, 196103 (2011)

InGaAs/AlInAs quantum cascade laser sources based on intracavity second harmonic generation in 2.6 - 3.6 micron range

Proc. of SPIE Photonics West, San Francisco, CA, USA, January, (2011) (invited talk)

Injectorless quantum cascade laser with two-phonon-resonance design using four alloys for emission wavelengths between 5 and 9 µm

Semicond. Sci. Technol. 26, 014018 (2011)

Injectorless quantum cascade lasers

Journal of Applied Physics, 109. 081101, pp. 1-9, (focused review article), (2011)

S. Katz | A. Vizbaras | R. Meyer | M. C. Amann

InP-based quantum cascade lasers with transversely integrated giant nonlinearity for wavelength generation in the 2.6 µm - 70 µm range by intracavity nonlinear frequency mixing

Proc. of the 40^th Freiburg Infrared Colloquium, February 16 -17, Freibug, Germany, (2011).

Interplay between electrical transport properties of GeMn thin films and Ge substrates

Phys. Rev. B 83, 125306 (2011)

N. Sircar | S. Ahlers | C. Majer | G. Abstreiter | D. Bougeard

Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon

Appl. Phys. Express. 4 021302 (2011)

Local modification of GaAs nanowires induced by laser heating

Nanotechnology 22, 325701 (2011)

Long-wavelength VCSELs for sensing applications

Invited Talk: SPIE Photonics West (2012), paper 8276-9, The Moscone Center, San Francisco, California (USA)

Low-Threshold 3 µm GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64°C

International Conference on Indium Phosphide and Related Materials (IPRM), Berlin, Germany, 2011.

Luminescence spectra of quantum dots in microcavities. III. Multiple quantum dots

Phys. Rev. B, 84 195313 (2011)

F. Laussy | A. Laucht | E. del Valle | J. Finley | J. M. Villas-Boas

Nano Antenna Array for Terahertz Detection

IEEE Trans. Microwave Theory Tech. 59, 2751 (2011)

Nanostructured polymer brushes and protein density gradients on diamond by carbon templating

Soft Matter, 2011, 7, 4861-4867

New Standards in High-Speed and Tunable Long Wavelength VCSELs

Invited Talk: SPIE Photonics Europe

Square Brussels Meeting Center (Belgium) - April 2012

T. Gruendl | M. Mueller | M. C. Amann

Nonresonant feeding of photonic crystal nanocavity modes by quantum dots

Journal of Applied Physics 109, 102404 (2011)

Novel concept of a monolithically integrated MEMS VCSEL

IPRM 2011 - International Conference on Indium Phosphide and Related Materials, Berlin, Germany (2011)

Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots

Phys. Rev. B 83, 161303(R) (2011)

Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots

Phys. Rev. B 83, 161303(R) (2011)

Optical field-enhancement in metal nanoparticle arrays contacted by electron beam induced deposition

Appl. Phys. Lett. 98, 243108 (2011).

M. Mangold | C. Weiss | B. Dirks | A. Holleitner

Plasma synthesis of nanostructures for improved thermoelectric properties

Platform for in situ real-time measurement of protein-induced conformational changes of DNA

Proc. Nat. Acad. Sci. Am. 107 (4) 1397-1401 (2010)

Polymer brushes on graphene

Journal of the American Chemical Society 133, 10490 (2011)

Quantum cascade lasers with integrated nonlinearity for difference-frequency (THz) and second harmonic (near infrared) generation

Villa Conference on Interactions Among Nanostructures (VCIAN), April 21-25, Las Vegas, Nevada USA, (2011) (invited talk).

A. Vizbaras | C. Grasse | R. W. Adams | M. A. Belkin | M. C. Amann

Real-space multiband envelope-function approach without spurious solutions

Phys. Rev. B 84, 195122 (2011)

T. Eissfeller | P. Vogl

Regimes of strong light-matter coupling under incoherent excitation

Phys. Rev. A, 84, 043816 (2011)

E. del Valle | F. Laussy

Resonant Photoconductance of Molecular Junctions Formed in Gold Nanoparticle Arrays

J. Am. Chem. Soc. 133, 12185-12191 (2011).

M. Mangold | M. Calame | M. Mayor | A. Holleitner

Role of structural order and excess energy on ultrafast free charge generation in hybrid polythiophene/Si photovoltaics probed in real time by near-infrared broadband transient absorption

Journal of the American Chemical Society 133, 18220 (2011)

Room-temperature "lambda" ~ 2.7 µm quantum cascade laser sources based on intracavity second-harmonic generation

IEEE Journal of Quantum Electronics, Vol. 47, No. 5, pp. 691-697, (2011)

Room-temperature GaSb-based quinternary type-I quantum-well lasers for the wavelength range from 3.3 to 3.6µm

European Semiconductor Laser Workshop 2011, Lausanne, Switzerland

C. Grasse | K. Vizbaras | A. Andrejew | S. Sprengel | M. C. Amann

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

Phys. Rev. Lett 107, 046601 (2011)

Semiconductor Lasers for the Near- and Far-Infrared: Materials and Device Concepts

Invited Talk: Global COE International Symposium

VCSELs and Nanophotonics Innovation for Green ICT (The 63rd SEIKEN Symposium, Tokyo Institute of Technology) - December 2011

T. Gruendl | M. Mueller | K. Vizbaras | A. Vizbaras | M. C. Amann

Short-wavelength injectorless quantum cascade laser based on second-harmonic generation

International Nano-Optoelectronics Workshop (iNow) 2011, St. Petersburg & Würzburg, Russia & Germany

Winner of "Best Poster Award 2011" (Third Place)

Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation

International Symposium on Compound Semiconductors (ISCS-2011), May 22-26, Berlin, Germany, (2011)

Single mode and tunable GaSb-based VCSELs for wavelengths above 2 µm

SPIE Photonics West 2011, San Francisco, CA, USA (Invited talk)

M. C. Amann | S. Arafin | K. Vizbaras

Site-specific assembly of DNA-based photonic wires using programmable polyamides

Angew. Chemie Int. Ed. 50, 12 (2011) 2712-2715

W. Su | M. Schuster | C. Bagshaw | U. Rant | G. Burley

Solution-processed networks of silicon nanocrystals: The role of internanocrystal medium on semiconducting behavior

The Journal of Physical Chemistry C 115, 20120 (2011)

Spin relaxation: from 2D to 1D

CFN Lectures on Functional, Nanostructures – Volume 2, "Nanoelectronics"

edited by Ch. Röthig, G. Schön, and M.Vojta

DOI: 10.1007/978-3-642-14376-2, Springer-Verlag Berlin Heidelberg (2011).

State-of-the-Art and Perspectives for Long-Wavelength High-Speed VCSELs

International Conference on Transparent Optical Networks (ICTON), June 26-30, Stockholm, Sweden, (2011).

Invited Paper

M. Mueller | M. C. Amann

Strahlenbiophysik, Strahleneffekte, Dosimeter oder Biosensor?

Labor&More 4.11 p52-54 (2011)

Strain-Controlled Variation of Magnetoresistive and Magnetic Anisotropy in (Ga,Mn)As

Journal of Superconductivity and Novel Magnetism 23 95 (2008)

Surface Micromachined MEMS-tunable VCSELs with wide and fast wavelength tuning

Electronic Letters, Vol. 47, Issue 22, p. 1243-1244 (Oct. 2011)

Surface micromachined tunable 1.55µm-VCSEL with 102nm continous single-mode tuning

Optics Express 17336, vol. 19, No. 18, Aug. 2011

Temperature-dependence and microscopic origin of low-frequency 1/f noise in GaN/AlGaN high electron mobility transistors

Appl. Phys. Lett. 99,203501 (2011)

Terahertz quantum cascade sources based on intra-cavity frequency mixing in passive nonlinear sections

Proc. of CLEO 2011, May 1-6, Baltimore, Maryland, USA, (2011)

Terahertz sources based on intracavity frequency mixing in mid-infrared quantum cascade lasers with passive nonlinear sections

Applied Physics Letters, 98, 151114, (2011)

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T. test

The frequency modulation response of vertical-cavity surface-emitting lasers: experiment and theory

Journal of Selected Topics of Quantum Electronics 17 1584-1593, 2011

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Thermally induced alkylation of diamond

LANGMUIR 26, 18862 (2010).

THz Quantum cascade sources based on intra-cavity frequency mixing in passive nonlinear sections

36^th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-2011), October 2-7, Houston, TX, USA (2011).

2nd place in best student paper competition

THz surface plasmon polaritons on a conductive right circular cone: Analytical description and experimental verification

Phys. Rev. A, 84, 013816 (2011)

V. B. Zon | B. A. Zon

Time-Resolved Picosecond Photocurrents in Contacted Carbon Nanotubes

Nano Letters 11, 269-272 (2011).

Towards a hybrid CMOS-imager with organic semiconductors as photoactive layer

Ph.D. Research in Microelectronics and Electronics (PRIME), 2011 7th Conference on, 89 -92 (2011)
DOI:10.1109/PRIME.2011.5966224

Transverse Mode Characteristics of GaSb-based VCSELs with Buried Tunnel Junctions

J. Sel. Top. Quantum Electron. 17(4) (2011)

S. Arafin | A. Bachmann | M. C. Amann

Ultra-Low resistive InAs/GaSb tunnel junctions

Semiconductor Science and Technology 26, 075021, 2011

K. Vizbaras | M. Toerpe | S. Arafin | M. C. Amann

Up to 3 µm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells

Applied Physics Letters, vol. 99 (23), 220911, 2011

S. Sprengel | C. Grasse | K. Vizbaras | T. Gruendl | M. C. Amann

Valley degeneracy in biaxially strained aluminum arsenide quantum wells

Phys. Rev. B 84, 125319 (2011)

S. Prabhu-Gaunkar | S. Birner | S. Dasgupta | C. Knaak | M. Grayson

Vertical-Cavity Surface-Emitting Laser Light- Current Characteristic at Constant Internal Temperature

IEEE Photonics Technology Letters 23 1295-1297, 2011

Water flow at the flip of a switch

Nature Nanotechnology 6 (2011) 759

U. Rant

Wavelength dependence of the performance of GaInAsSb/GaSb mid-infrared lasers

UK Semiconductors, Sheffield, UK, (2011) (poster)

Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs

European Semiconductor Laser Workshop 2011, Lausanne, Switzerland

Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs

Oral. presentation - European Semiconductor Laser Workshop ESLW 2011, Lausanne (Switzerland), Sep. 2011

2.34 µm electrically-pumped VECSEL with buried tunnel junction

SPIE Photonics Europe, Brussels, Belgium (2010)

1.55 µm High-Speed VCSELs Enabling Error-Free Fiber-Transmission up to 25 Gbit/s

Proceedings of International Semiconductor Laser Conference (ISLC), September 26-30, Kyoto, (2010).

All-optical coherent control of electrical currents in single GaAs nanowires

Conference paper, International conference on ultrafast phenomena (UP), Snowmass Village, CO, USA, July 18th, 2010

Analyse von Biomolekülen mit aktiv bewegten Nano-Oberflächen

Laborwelt 11 (5) 21 (2010)

J. Niemax | R. Strasser | P. Hampel | U. Rant

Asymmetric optical nuclear spin pumping in a single uncharged quantum dot

Phys. Rev. B 82, 121307(R) (2010)

BCB Encapsulated VCSEL Based on InP Suitable for MEMS Technology

VCSEL Day 2010, European workshop organized by SUBTUNE (Oral Presentation)

Location: IEIIT CNR, Politecnico di Torino, Italy

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Compact VCSEL-based CO2 and H2O sensor with inherent wavelength calibration for safety and air-quality applications

Conference on Lasers and Electro Optics (CLEO), San Jose, USA, JThB3

Comparison of plasma-effect in different InP-based VCSELs

Conference on Lasers and Electro Optics (CLEO), San Jose, USA, CMO4

Conformations of End-Tethered DNA Molecules on Gold Surfaces: Influences of Applied Electric Potential, Electrolyte Screening, and Temperature

J. Am. Chem. Soc., 132, 7935 (2010)

W. Kaiser | U. Rant

Controlling Surface Functionality through Generation of Thiol Groups in a Self-Assembled Monolayer

Langmuir, 26(20), 15895-900, 2010

Coupled carrier-field Monte-Carlo analysis of mid-IR quantum cascade lasers

14^th international workshop on Computational Electronics (IWCE), Pisa, Italy (2010)

Covalently binding the photosystem I to carbon nanotubes

AIP Conf. Proc. 1199, 133 (2010).

Damping in high-frequency metallic nanomechanical resonators

Phys. Rev. B 81, 184112

Defect Formation in Ga-Catalyzed Silicon Nanowires

Crystal Growth & Design 10, 1534 (2010)

Defect reduction in silicon nanoparticles by low-temperature vacuum annealing

Applied Physics Letters 96, 193112 (2010)

Design and realization of low density InAs quantum dots on AlGaInAs lattice matched to InP(001)

Journal of Crystal Growth 312, 2300 (2010)

Detection of mechanical resonance of a single-electron transistor by direct current

Appl. Phys. Lett. 96, 263513 (2010)

Electric g tensor control and spin echo of a hole-spin qubit in a quantum dot molecule

New Journal of Physics 12 (2010) 093012

R. Roloff | T. Eissfeller | P. Vogl | W. Pötz

Electrically Facilitated Translocations of Proteins through Silicon Nitride Nanopores: Conjoint and Competitive Action of Diffusion, Electrophoresis, and Electroosmosis

Nano Letters 10, 2162–2167 (2010)

M. Firnkes | D. Pedone | J. Knezevic | M. Döblinger | U. Rant

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

PHYSICAL REVIEW B 81, 161203(R) (2010)

Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

J. Appl. Phys. 108, 083510 (2010)

Electronic properties of ultrananocrystalline diamond surfaces

Applied Physics Letters 96, 092109 (2010)

Electrostatically defined quantum dots in a Si/SiGe heterostructure

New Journal of Physics

A. Wild | J. Sailer | J. Nützel | S. Ludwig | D. Bougeard

Empirical modeling of the refractive index of (AlGaIn)As lattice matched to InP

Semiconductor Science and Technology 25 (2010) 045018

Enhanced photoluminecence from self-organized rubrene single crystal surface structures

Appl. Phys. Lett. 96, 231902 (2010).

Enhanced photoluminescence emission from two-dimensional silicon photonic crystal nanocavities

New Journal of Physics 12, 053005 (2010)

Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation

ICMBE Conference, Berlin, 2010

Evaluation of threading dislocation densities in In- and N-face InN

J. Appl. Phys. 107, 053517 (2010).

C. S. Gallinat | G. Koblmueller | F. Wu | J. S. Speck

Fabrication and electrical characterization of a pore–cavity–pore device

J. Phys.: Condens. Matter 22 454115 (2010)

Fabrication of Metallized Nanopores in Silicon Nitride Membranes for Single-Molecule Sensing

Small 6 1406-1414 (2010)

article featured on cover

R. Wei | D. Pedone | A. Zürner | M. Döblinger | U. Rant

GaSb-based wavelength-tunable single-mode VCSELs for the 2-3 µm wavelength range

10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, (MIOMD), Shanghai, China (2010) (invited).

M. C. Amann | S. Arafin | K. Vizbaras

Graphene Solution-Gated Field-Effect Transistor Array for Sensing Applications

Advanced Functional Materials 20, 3117–3124 (2010)

Growth and Characterisation of GaAsSb:C/GaInAs:Si Tunnel Junctions for InP-based Long-Wavelength VCSELs

25. DGKK-Workshop, Aachen 2010

Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area molecular beam epitaxy

J. Appl. Phys. 108, 114316 (2010).

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

Applied Physics A 100, 287-289 (2010)

High Efficiency Injectorless Quantum Cascade Lasers Emitting at 8.8 µm With 2-W Peak Pulsed Power per Facet at Room Temperature

IEEE Photonics Technology Letters 22 (24), 1811-1813 (2010).

H. Li | S. Katz | A. Vizbaras | G. Boehm | M. C. Amann

High temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

J. Appl. Phys. 107, 043527 (2010).

G. Koblmueller | R. M. Chu | A. Raman | U. K. Mishra | J. S. Speck

High-Speed and High-Power Vertical-Cavity Surface-Emitting Lasers based on InP suitable for Telecommunication and Gas Sensing

SPIE Remote Sensing, Security and Defence 2010, paper number 7828-6, Toulouse, Frankreich

Oral presentation

High-Speed High-Power VCSELs based on InP

International Nano-Optoelectronics Workshop (iNow) 2010, Peking & Changchun, China

Winner of "Best Poster Award 2010" (First Place)

Hole transport and photoluminescence in Mg-doped InN

J. Appl. Phys. 107, 113712 (2010).

In vacancies in InN grown by plasma-assisted molecular beam epitaxy

Appl. Phys. Lett. 97, 251907 (2010)

F. Reurings | F. Tuomisto | C. S. Gallinat | G. Koblmueller | J. S. Speck

In vacancies in Si-doped InN

phys. stat. sol. (a) 207, 1083 (2010).

Influence of dispersion interactions on the adsorption of PTCDA on Ag(110)

phys. stat. sol. (c) 7, 236 (2010).

R. Scholz | A. Abbasi

Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

Appl. Phys. Lett. 97, 191915 (2010).

G. Koblmueller | F. Reurings | F. Tuomisto | J. S. Speck

Injectorless quantum cascade lasers for room-temperature short-wavelength emission by efficient second-harmonic generation

Proceedings of the 23^rd IEEE Photonics Society Annual Meeting, Denver, CO, USA pp. 367-368, (2010)

InP-based High-Speed VCSELs for Optical Interconnects

Workshop of 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan (2010).

Invited Paper

S. Arafin | M. Mueller | M. C. Amann

InP-based Highspeed-VCSELs with Novel Short-Cavity Design for Application in Access Networks

12th International Conference on Transparent Optical Networks (ICTON), June 27 - July 1, Munich, (2010).

Invited Paper

M. C. Amann | M. Mueller

In-situ characterization of latent images in irridiated e-beam resists using novel atomic force microscope technique

Frühjahrstagung der Deutschen Physikalischen Gesellschaft & Raith User-Meeting

In-situ direct visualization of irradiated e-beam patterns on unprocessed resists using atomic force microscopy

J. Vac. Sci. Technol. B 28, 802 (2010).

Interplay of epitaxial strain and perpendicular magnetic anisotropy in insulating ferromagnetic Ga$_{1-x}$Mn$_{x}$P$_{1-y}$N$_{y}$

Phys. Rev. B 81, 205210 (2010)

Isotope effect on electron paramagnetic resonance of boron acceptors in silicon

PHYSICAL REVIEW B 82, 115213 (2010)

Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 µm

22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan (2010).

S. Arafin | A. Bachmann | K. Vizbaras | M. C. Amann

Large-Area Single-Mode GaSb-based VCSELs using an Inverted Surface Relief

The 23rd Annual Meeting of the IEEE Photonics Society (formerly LEOS), Denver, CO, USA (2010).

Laser Spectroscopic Oxygen Sensor Using Diffuse Reflector-based Optical Cell and Advanced Signal Processing

Applied Physics B: Lasers and Optics 100 417-425 (2010)

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Leichte Proteine schwingen besser

Nachrichten aus der Chemie 58 (10) 1052 (2010)

R. Strasser | J. Niemax | P. Hampel | U. Rant

Long exciton spin memory in coupled quantum wells

Appl. Phys. Lett. 97, 011104 (2010).

Highlighted in the "Virtual Journal of Ultrafast Science" -- August 2010

Long-Wavelength BTJ-VCSEL with High-Contrast Grating

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 16 - 21 in San José (2010).

Long-Wavelength High-Contrast Grating Vertical-Cavity Surface-Emitting Laser

IEEE Photonics Journal, vol. 2, no. 3, pp. 415-422, June 2010

Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy

Appl. Phys. Lett. 96, 102111 (2010).

J. J. M. Law | E. T. Yu | G. Koblmueller | F. Wu | J. S. Speck

Low-frequency noise in diamond solution-gated field effect transistors

Applied Physics Letters 97, 093504 (2010)

Low-level and ultralow-volume hollow waveguide based carbon monoxide sensor

Optics Letters 35, 3577-3579 (2010)

J. Chen | A. Hangauer | R. Strzoda | M. Fleischer | M. C. Amann

Low-Parasitics 1.55 µm VCSELs with Modulation Bandwidths beyond 17 GHz

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 16 - 21 in San José (2010).

M. Mueller | W. Hofmann | M. Horn | G. Boehm | M. C. Amann

MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm

Journal of Crystal Growth doi:10.1016/j.jcrysgro.2010.11.139

MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm

16th International Conference on Molecular Beam Epitaxy MBE 2010 (Contributed talk)

Microstructured poly(2-oxazoline) bottle-brush brushes on nanocrystalline diamond

Physical Chemistry Chemical Physics, 2010, 12, 4360-4366

Mollow Triplet under Incoherent Pumping

Physical Review Letters 105 (233601) (2010)

E. del Valle | F. Laussy

Multiple Nanowire Species Synthesized on a Single Chip by Selectively Addressable Horizontal Nanochannels

Nano Letters 10(4), 1341 (2010)

Multiplexed Parallel Single Transport Recordings on Nanopore Arrays

Nano Letters 10 5080–5087 (2010)

Mutual coupling of two semiconductor quantum dots via an optical nanocavity

Physical Review B 82, 075305 (2010)

Nanoscale spectroscopic imaging of organic semiconductor films by plasmon-polariton coupling

Phys. Rev. Lett. 104, 056601 (2010).

New method for measuring the IR surface impedance of metals

Opt. Spectrosc. 108, 4, 637-639 (2010)

Nonlinear gain behavior in injectorless quantum cascade lasers

Optical Engineering, 49, 111107 (2010)

Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dot

Applied Physics Letters 96, 053113 (2010)

On-chip functionalization of carbon nanotubes with photosystem I

J. of. Am. Chem. Soc. 132, 2872 (2010).

S. Lingitz | M. Brandstetter | F. C. Simmel | I. Carmeli | A. Holleitner

Optical anisotropy of a- and m-plane InN grown on free-standing GaN substrates

phys. stat. sol. (a) 207, 1062 (2010).

Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

physica status solidi (c), 7, 2233-2235 (2010)

Optically monitoring electron spin relaxation in a single quantum dot using a spin memory device

Phys. Rev. B 82, 245316 (2010)

Origin of energy dispersion in Al_xGa_(1-x)/GaN nanowire quantum discs with low Al content

Phys. Rev. B 82, 235308 (2010)

Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates

Advanced Materials 22, 2632 (2010)

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

Appl. Phys. Lett. 97, 111107 (2010).

Photoconductive gain in semiconductor quantum wires

AIP Conf Proc. 1199, 331 (2010).

Photoluminescence polarization properties of single GaN nanowires containing AlxGa1-xN/GaN quantum discs

Phys. Rev. B 81 045411 (2010)

Quantum Hall resistance overshoot in two-dimensional (2D) electron gases: theory and experiment

New Journal of Physics

J. Sailer | A. Wild | V. Lang | A. Siddiki | D. Bougeard

Quantum interference control of femtosecond, µA current bursts in single GaAs nanowires

Nano Lett. 10(5), 1799 (2010).

Random pn-junctions for physical cryptography

Applied Physics Letters 96, 172103 (2010)

C. Jaeger | M. Algasinger | U. Rührmair | G. Csaba | M. Stutzmann

Real-Time Changes in the Optical Spectrum of Organic Semiconducting Films and Their Thickness Regimes during Growth

Phys. Rev. Lett. 104, 257401 (2010).

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

Applied Physics Letters 96, 092110 (2010)

Recent Progress on Electrically-Pumped Single-Mode GaSb-based VCSELs Emitting around 2.3 µm and 2.6 µm

International workshop on opportunities and challenges in mid-infrared laser-based gas sensing MIRSENS 2010, Wroclaw, Poland.

K. Vizbaras | A. Bachmann | S. Arafin | M. C. Amann

Resolution limits of laser spectroscopic absorption measurements with hollow glass waveguides

Applied Optics 49, 5254-5261 (2010)

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Security Applications of Diodes with Random Current-Voltage Curves

Financial Cryptography and Data Security, LNCS 6052, 328 (2010)

Selective excitation of exciton transitions in PTCDA crystals and films

Phys. Rev. B 81, 155208 (2010).

Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy

Nanotechnology 21, 365602 (2010).

Sensitivity Limits for Near- Infrared Gas Sensing with Suspended-core PCFs directly coupled with VCSELs

Conference on Lasers and Electro Optics (CLEO), San Jose, USA, JThB7

Small-Signal Analysis of High-Temperature Stable 1550nm High-Speed VCSELs

Proceedings of 6th Joint Symposium on Opto- and Microelectronic Devices and Circuits, October 4-7, Berlin, (2010).

Spatially resolved ballistic optoelectronic transport in nanoscale circuits measured by quantized photocurrent spectroscopy

Nano Lett. 10 (10), 3836 (2010).

Spatially resolved Raman spectroscopy on indium-catalyzed core-shell germanium nanowires: size effects

Nanotechnology 21, 105703 (2010)

Spatially resolved ultrafast transport current in GaAs photoswitches

Appl. Phys. Lett. 96, 261110 (2010).

Highlighted in the "Virtual Journal of Ultrafast Science" -- August 2010

L. Prechtel | S. Manus | D. Schuh | W. Wegscheider | A. Holleitner

Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

PHYSICAL REVIEW LETTERS 104, 046402 (2010)

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to (113)A-oriented layers

Phys. Rev. B 81, 245202 (2010)

Structured polymer brushes on silicon carbide

CHEMISTRY OF MATERIALS 22 272 (2010)

Surface, bulk, and interface electronic properties of nonpolar InN

Appl. Phys. Lett. 97, 112103 (2010).

Surface, bulk, and interface electronic properties of nonpolar InN

Appl. Phys. Lett. 97, 112103 (2010).

Temporal monitoring of nonresonant feeding of semiconductor nanocavity modes by quantum dot multiexciton transitions

Physical Review B 81, 241302(R) (2010)

Terahertz Quantum Cascade Lasers based on Type II InGaAs/GaAsSb/InP

Applied Physics Letters 97, 261110 (2010)

Terahertz radiation from nonpolar InN due to drift in an intrinsic in-plane electric field

Appl. Phys. Exp. 3, 092201 (2010).

Terahertz sources based on difference-frequency generation near exit facets in dual-wavelength mid-infrared quantum cascade lasers

CLEO/QELS: 2010, May 16-21, San Jose, California, USA (2010).

The non-equilibrium Green's function method: an introduction

Journal of Computational Electronics 9, 237-242 (2010)

P. Vogl | T. Kubis

10.1109/IWCE.2010.5677996

The nonequilibrium Green's functions method and descendants: ways to avoid and to go

P. Greck | C. Schindler | T. Kubis | P. Vogl

Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

Appl. Phys. Lett. 97, 263107 (2010)

Thin Film Solar Cells on Low Thermal Budget Polycrystalline Silicon Seed Layers

accepted at Jpn. J. Appl. Phys. (2010)

THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

Semicond. Sci. & Technol. 25, 015004 (2010).

THz quantum cascade laser sources for room-temperature operation

The 40^th winter colloquium on the Physics of Quantum Electronics (PQE-2010), January 3-7, Snowbird, Utah, USA (invited talk) (2010).

Towards high-performance injectorless quantum cascade lasers

ACP 2010 (invited talk), Shanghai, China, December 8-12 (2010)

S. Katz | A. Vizbaras | M. C. Amann

Tunable diode laser spectroscopy with optimum wavelength scanning

Applied Physics B: Lasers and Optics 100 331-339 (2010)

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Tunable long wavelength MEMS VCSELs

SUBTUNE Workshop, Laserzentrum Nuremberg (oral presentation)

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Tuneable VCSEL aiming for the application in interconnects and short haul systems

Invited talk: SPIE Photonics West 2011, 22 - 27 January, The Moscone Center, San Francisco, California, USA

Two-step crystallization during the reverse aluminum-induced layer exchange process

Journal Of Applied Physics 108, 113513 (2010)

C. Jaeger | M. Bator | S. Matich | M. Stutzmann

VCSEL-based Calibration-free Carbon Monoxide Sensor at 2.3 µm with in-line Reference Cell

Applied Physics B: Lasers and Optics 102 381-389, 2011

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Widely Tunable High-Speed Bulk-Micromachined Short-Wavelength MEMS-VCSEL

22^nd IEEE International Semiconductor Laser Conference (ISLC), Kyoto, Japan (oral presentation)

Surface plasmon enhanced photoconductance of gold nanoparticle arrays with incorporated alkane linkers

Appl. Phys. Lett. 94, 161104 (2009)

M. Mangold | C. Weiss | M. Calame | A. Holleitner

"Electronic Tongue” Integrated Sensor System Based on an Array of Ion-Selective Field-Effect Transistors for Multicomponent Analysis of Liquid Media

Russian Journal of Applied Chemistry 82 (8), 1384 (2009)

1.55 µm InP-based VCSEL with Enhanced Modulation Bandwidths > 10 GHz up to 85°C

Proceedings of Optical Fiber Communication Conference and Exposition (OFC) and The National Fiber Optic Engineers Conference (NFOEC), Marcj 22 - 26, San Diego, (2009).

W. Hofmann | M. Mueller | M. Ortsiefer | M. C. Amann

1.55 um InP-based Short-Cavity-VCSEL with Enhanced Modulation-Bandwidth of 15 GHz

35th European Conference on Optical Communication (ECOC), September 20-24, Vienna, (2009).

Invited Paper

M. Mueller | W. Hofmann | G. Boehm | M. C. Amann

1.55um VCSEL with Enhanced Modulation Bandwidth and Temperature Range

IEEE PHOTONICS TECHNOLOGY LETTERS; VOL. 20, NO. 11, FEBRUARY 2009

W. Hofmann | M. Mueller | G. Boehm | M. Ortsiefer | M. C. Amann

22-Gb/s Long Wavelength VCSELs

Optics Express, Vol. 17, Issue 20, pp. 17547-17554, (2009).

A level set simulation for ordering of quantum dots via cleaved-edge overgrowth

Appl.Phys.Lett. 95, 023119 (2009)

X. B. Niu | E. Uccelli | A. Fontcuberta i Morral | C. Ratsch

A micron-sized nanoporous multifunction sensing device

Phys. Status Solidi (a) 206, 435 (2009)

Ab Initio Calculation of the Dispersion Interaction between a Polyaromatic Molecule and a Noble Metal Substrate: PTCDA on Ag(110)

J. Phys. Chem. C 113, 19897 (2009).

A. Abbasi | R. Scholz

Al(In)As-(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers

J. Crystal Growth, 2009, 311, pp. 1932-1934

G. Boehm | S. Katz | R. Meyer | M. C. Amann

Analysis of Dynamic Tuning Effects in Vertical-Cavity Surface-Emitting Lasers

Proceedings of the Fifth Joint Symposium on Opto- & Microelectronic Devices and Circuits (SODC), Beijing, China. 28-31 (2009)

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Analysis of polarization-dependent photoreflectance studies for c-plane GaN films grown on a-plane sapphire

Phys. Status Solidi A 206, 773 (2009)

Antimon assisted growth of InAs Quantum Dots

Deutscher MBE Workshop, Bochum, Germany (2009)

Applications of High-Capacity Crossbar Memories in Cryptography

Nanotechnology, IEEE Transactions on 99, 1 (2010)

Asymmetry between absorption and photoluminescence line shapes of TPD: Spectroscopic fingerprint of the twisted biphenyl core

J. Phys. Chem. A 113, 315 (2009)

Ballistic quantum transport using the contact block reduction (CBR) method

Journal of Computational Electronics 8 (3), 267-286 (2009)
DOI 10.1007/s10825-009-0293-z

S. Birner | C. Schindler | P. Greck | M. Sabathil | P. Vogl

Buried tunnel junction mid-infrared GaSb VCSELs investigated using hydrostatic pressure

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2009).

Carrier transport in THz quantum cascade lasers: Are Green's functions necessary?

Journal of Physics: Conference Series 193 (2009) 012026

A. Mátyás | T. Kubis | P. Lugli | C. Jirauschek

Cascaded exciton emission of an individual strain-induced quantum dot

Appl. Phys. Lett. 95, 083122 (2009)

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures’

Nanotechnology 20, 075603 (2009)

CO and CH4 Sensing with Single Mode 2.3µm GaSb-Based VCSEL

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, (2009)

Coherent potential approximation for spatially correlated disorder

Phys. Rev. B 80, 144202 (2009)

R. Zimmermann | C. Schindler

Comparison between semiclassical and full quantum transport analysis of THz quantum cascade lasers

Physica E 42, 2628–2631 (2010)

A. Mátyás | T. Kubis | P. Lugli | C. Jirauschek

Comparison of the magnetic properties of GeMn thin films through Mn L-edge x-ray absorption

Appl. Phys. Lett. 95, 151911 (2009)

Concept of a single photon source based on InP for emission at 1.55 µm

International Conference on Nanomaterials and Nanosystems (NanoMats2009), Istanbul, Turkey (2009)

Concept of a Single Photon Source Based on InP for emission at 1.55 µm (Poster)

Nim/CeNS/SFB486 Winterschool 2009, Nanosystems and Sensors, 1.-7. March 2009

Conjugated 12 nm long oligomers as molecular wires in nanoelectronics

Journal of Materials Chemistry 19, 3899 (2009)

Continuous-Wave Electrically-Pumped GaSb-based VCSELs at ~ 2.6 µm Operating up to 50°C

The 22nd Annual Meeting of the IEEE Photonics Society (formerly LEOS), Belek-Antalya, Turkey, (2009)

S. Arafin | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Continuous-Wave Single-Mode Electrically -Pumped GaSb-based VCSELs at 2.5 µm

The 8th Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim), Shanghai, China (2009).

S. Arafin | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Crystallochromy of perylene pigments: Interference between Frenkel excitons and charge-transfer states

Phys. Rev. B 80, 115309 (2009).

L. Gisslen | R. Scholz

Data Analysis of Translocation Events in Nanopore Experiments

Analytical Chemistry 81 (23) 9689–9694 (2009)

D. Pedone | M. Firnkes | U. Rant

Decoherence in quantum dots due to real and virtual transitions: A nonperturbative calculation

Phys. Rev. B 80, 245310 (2009).

T. Grange

Density Enhanced Diffusion of Dipolar Excitons within a One-Dimensional Channel

Physical Review Letters 103, 126402 (2009).

X. Vögele | D. Schuh | W. Wegscheider | J. Kotthaus | A. Holleitner

Dephasing of Exciton Polaritons in Photoexcited InGaAs Quantum Dots in GaAs Nanocavities

Physical Review Letters 103, 087405 (2009)

Design and Technologies of High Speed MEMS-VCSEL Based on InP

VCSEL Day 2009, European Workshop organized by CHALMERS University of Technology, Gothenburg, Sweden

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Detection and Size Analysis of Proteins with Switchable DNA Layers

Nano Letters, 2009 (4), pp. 1290–1295, DOI: 10.1021/nl802678

Diamond transistor array for extracellular recording from electrogenic cells

Adv. Funct. Mater. 19, 2915–2923 (2009)

Dielectric screening versus quantum confinement of phosphorus donors in silicon nanocrystals investigated by magnetic resonance

PHYSICAL REVIEW B 79, 161304(R) (2009)

Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation

PHYSICAL REVIEW B 80, 165326 (2009)

Efficient and selective cavity-resonant excitation for single photon generation

New J. Phys. 11, 013031 (2009)

Electrical control of spontaneous emission and strong coupling for a single quantum dot

New Journal of Physics 11, 023034 (2009)

Electrically controllable g tensors in quantum dot molecules

Physical Review B 79, 045307 (2009)

[selected as Physical Review Editors' Suggestion; selected by David P. DiVincenzo for Virtual Journal of Quantum Information Vol. 9, Issue 1 (Jan 2009); selected by David Awschalom for Virtual Journal of Nanoscale Science & Technology Vol. 19, Issue 4 (Jan 26, 2009); selected for a Viewpoint in Physics 2, 16 (2009)]

T. Andlauer | P. Vogl

Electrically-pumped continuous-wave vertical-cavity surface-emitting lasers at ~ 2.6 µm

Applied Physics Letters 95 (2009), 131120 (1-3)

S. Arafin | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Electrochemical impedance spectroscopy of oxidized and hydrogen-terminated nitrogen-induced conductive ultrananocrystalline diamond

Electrochimica Acta 54, 1909 (2009)

Electronic and optical properties of boron-doped nanocrystalline diamond films

Phys. Rev. B 79, 045206 (2009)

Electronic transport at the interface between diamond and aqueous electrolyte

DPG Fruehjahrstagung, Dresden, Germany

M. Dankerl | U. Stützel | A. Lippert | M. Stutzmann | J. A. Garrido

Fire Detection with a Compact, 2.3 µm VCSEL-Based Carbon Monoxide Sensor

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, (2009)

A. Hangauer | J. Chen | R. Strzoda | M. Fleischer | M. C. Amann

Full-band envelope function approach for type-II broken-gap superlattices

Physical Review B 80, 035304 (2009)

T. Andlauer | P. Vogl

GaAs nanowires and related prismatic heterostructures

Semiconductor Science and Technology, 24, 113001 (2009)

D. Spirkoska | G. Abstreiter | A. Fontcuberta i Morral

Gain peak–cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure

IET Optoelectron. Selected papers inspired by the Semiconductor and Integrated Optoelectronics (SIOE) Conference, Vol. 3, Issue 6, p. 305-309 (2009).

Gallium assisted Plasma Enhanced Chemical Vapor Deposition of silicon nanowires

Nanotechnology 20, 155602 (2009)

GaN quantum dots as optical transducers for chemical sensors

Applied Physics Letters 94, 113108 (2009)

GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 µm

J. Sel. Top. Quantum Electron. 15(3) (2009)

A. Bachmann | K. Kashani-Shirazi | S. Arafin | M. C. Amann

Gate control of low-temperature spin dynamics in two-dimensional hole systems

Physical Review B 80, 035325 (2009)

Ge1-x Mnx Clusters: Central Structural and Magnetic Building Blocks of Nanoscale Wire-Like Self-Assembly in a Magnetic Semiconductor

Nano Letters, Vol. 9 (11) (2009)

General theoretical considerations on nanowire solar cell design

Phys. Stat. Solidi A, 206, 173 (2009)

A. kandala | T. Betti | A. Fontcuberta i Morral

Growth of low-density quantum dots emitting at telecommunication wavelengths

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2009).

High Power Injectorless Quantum Cascade Laser Structure in the 6.0 µm Wavelength Range

Proc. of CLEO, 2009, Baltimore

S. Katz | G. Boehm | M. C. Amann

Highly Temperature-Stable, Long Wavelength Short-Injector Quantum Cascade Laser

10^th International Conference on Intersubband Transitions in quantum Wells (ITQW-2009), September 6^th- 11^th, Montreal, Canada, (2009).

A. Vizbaras | S. Katz | G. Boehm | M. C. Amann

High-performance injectorless quantum cascade laser emitting below 6 µm

Appl. Phys. Lett., 94, 151106, (2009)

High-Speed Tuning in Vertical-Cavity Surface-Emitting Lasers

European Conference on Lasers and Electro Optics (CLEO Europe), Munich, Germany, CB13.5

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

How periodic are terahertz quantum cascade lasers?

Journal of Physics: Conference Series 193 (2009) 012063

InAs Quantum Dots emitting at 1.55 µm grown on InP substrate using MBE

DPG Fruehjahrstagung, Dresden, Germany (2009)

InAs Quantum Dots on AlGaInAs emitting in the optical C-Band at 1.55µm

21th International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, USA (2009)

Indium-catalyzed germanium nanowires—a systematic thermal CVD growth study

Nanotechnology 20, 245608 (2009)

Influence of hydrogen on nanocrystalline diamond surfaces investigated with HREELS and XPS

phys. stat. sol. A 206 2022–2027 (2009)

Injectorless quantum cascade laser operating in continuous wave above room temperature

Semicond. Sci. Technol., 24, (2009), 122001.

InP-based VCSEL with Novel Short-Cavity Design for Enhanced Modulation Bandwidth

Proceedings of International Nano-Optoelectronics Workshop (i-NOW), August 2 - 15 in Stockholm/Berlin, 2009.

M. Mueller | W. Hofmann | M. C. Amann

Investigation of a contacting scheme for self-assembled cleaved edge overgrown InAs nanowires and quantum dot arrays

Phys. Status Solidi A 206, 1620 (2009)

Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots

European Physical Journal B 67, 51-56 (2009).

V. Preisler | T. Grange | R. Ferreira | et al.

Laser Spectroscopic Oxygen Sensor for Real Time Combustion Optimization

Procedia Chemistry, 1, 955-958 (2009)

Laser Wavelength Stabilization using Gases with Complex Spectral Fingerprint

Field Laser Applications in Industry and Research 2009 (FLAIR), Garmisch-Partenkirchen, Germany, p. 44 (2009)

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Light-induced charge transfer in hybrid composites of organic semiconductors and silicon nanocrystals

Applied Physics Letters 94, 113301 (2009)

Long lifetimes of quantum-dot intersublevel transitions in the terahertz range

Nature Materials 8, 803-807 (2009).

E. A. Zibik | T. Grange | B. A. Carpenter | et al

Long Range Epitaxial Growth of Prismatic Heterostructures on the facets of Catalyst-Free GaAs Nanowires

J. Mater. Chemistry 19, 840 (2009)

Long wavelength electrically pumped GaSb-based Buried Tunnel Junction VCSELs

Proc. of the 14th International Conference on Narrow Gap Semiconductors and Systems (NGSS), Physica Procedia, Vol. 3, Iss. 2, p. 1155-1159, Sendai, Japan (2009).

A. Bachmann | S. Arafin | K. Kashani-Shirazi | M. C. Amann

Long-Wavelength BTJ-VCSELs with improved Modulation Bandwidth and Temperature Range

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and The International Quantum Electronics Conference (IQEC), May 31 - June 5 in Baltimore, (2009).

W. Hofmann | M. Mueller | G. Boehm | J. Rosskopf | M. C. Amann

Low-resistive ohmic contacts to n- InAs0.91Sb0.09 for GaSb-based VCSELs in the mid-infrared range

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2009).

S. Arafin | A. Bachmann | K. Kashani-Shirazi | S. Priyabadini | M. C. Amann

Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

IET Optoelectronics, Vol. 3, no. 6, p. 259-263 (2009).

S. Arafin | A. Bachmann | K. Kashani-Shirazi | S. Priyabadini | M. C. Amann

Low-resistive thermally stable metal-semiconductor contacts on n-GaSb using n-InAsSb contact layer

International Conference on Frontiers of Physics (IFCP), Kathmandu, Nepal, (2009)

S. Priyabadini | S. Arafin | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Low-temperature transport in highly boron-doped nanocrystalline diamond

Phys. Rev. B 79 201203(R) (2009)

Low-Threshold Strained Quantum-Well GaSb-Based lasers Emitting in the 2.5 to 2.7 µm Wavelength range

IEEE Photonics Technology Letters Vol.21 (16), 1106 (2009).

K. Kashani-Shirazi | K. Vizbaras | A. Bachmann | S. Arafin | M. C. Amann

Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration

Phys. Rev. B 79, 195206 (2009)

Magnetic Field Dependence of Dielectric Polarization Echoes in KCl doped with Li

Journal of Physics CS 150, 042028 (2009)

F. Klotz | A. Fleischmann | C. Enss

Manganese-hydrogen complexes in Ga1-xMnxN

PHYSICAL REVIEW B 80, 205205 (2009)

Metal/organic interface formation studied in situ by resonant Raman spectroscopy

in: Physical and Chemical Aspects of Organic Electronics, ed. by C. Wöll, Wiley-VCH (Weinheim 2009), ch. 13.

G. Salvan | B. A. Paez | D. R. T. Zahn | L. Gisslen | R. Scholz

Metal-insulator transition and superconductivity in highly boron-doped nanocrystalline diamond films

phys. stat. sol. A 206 1978–1985 (2009)

Miniaturized Laser Spectroscopic CO Sensor for Industrial and Safety Applications

Procedia Chemistry, 1, 1383-1386 (2009)

J. Chen | A. Hangauer | R. Strzoda | M. Fleischer | M. C. Amann

Near-Infrared Gas Sensing using Hollow Waveguides and PCFs Directly Coupled to VCSELs

Field Laser Applications in Industry and Research 2009 (FLAIR), Garmisch-Partenkirchen, Germany, p. 93 (2009)

Nonequilibrium Green's function calculation for four-level scheme terahertz quantum cascade lasers

Appl. Phys. Lett. 94, 151109 (2009)

Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy

Journal of Applied Physics 105, 023505 (2009)

Optical spectra obtained from amorphous films of rubrene: Evidence for predominance of twisted isomer

J. Chem. Phys. 130, 214507 (2009).

Optimized MBE growth technique for GaSb-based edge emitters at 2.7 µm

Euro MBE 2009, 8th - 11th March 2009, Zacopane, Poland (2009)

Optoelectronic sensitization of carbon nanotubes by CdTe nanocrystals

Physical Review B 79, 205402 (2009).

Ordered Si nanoaperture arrays for the measurement of ion currents across lipid membranes

APPLIED PHYSICS LETTERS 95, 023112 (2009)

Outcoupling of Light Generated in a Monolithic Silicon Photonic Crystal Nanocavity through a Lateral Waveguide

Jpn. J. Appl. Phys. 48 (2009) 062003

Outcoupling of Light Generated in a Monolithic Silicon Photonic Crystal Nanocavity through a Lateral Waveguide

Jpn. J. Appl. Phys. 48 (2009) 062003

Phonon-assisted transitions from quantum dot excitons to cavity photons

Physical Review B 80, 201311(R) (2009)

Photocurrent and photoconductance properties of a GaAs nanowire

Applied Physics Letters 95, 083111 (2009).

Photocurrent properties of freely suspended carbon nanotubes under uniaxial strain

Appl. Phys. Lett. 94, 261106 (2009).

S. Lingitz | S. Li | J. Kotthaus | A. Holleitner

Photonic Crystal Nanostructures for Optical Biosensing Applications

Biosensors and Bioelectronics 24, 3688 (2009)

Photoresponse and morphology of pentacene thin films modified by oxidized and reduced diamond surfaces

Phys. Rev. B 80, 235311 (2009)

Planar Nanogap Electrodes by Direct Nanotransfer Printing

SMALL 5, 579 (2009)

Planarization of overgrown tunnel junctions for InP-based VCSEL by MOVPE

European Workshop on Metalorganic Vapor Phase Epitaxy 2009 (EWMOVPE XIII), Ulm, Germany

PNA-PEG Modified Silicon Platforms as Functional Bio-Interfaces for Applications in DNA Microarrays and Biosensors

Biomacromolecules

Potentiometry on pentacene OFETs: Charge carrier mobilities and injection barriers in bottom and top contact configurations

in: Physical and Chemical Aspects of Organic Electronics, ed. by C. Wöll, Wiley-VCH (Weinheim 2009), ch. 20.

R. Scholz | D. Lehmann | A. D. Müller | F. Müller | D. R. T. Zahn

Prediction of giant intrinsic spin-Hall effect in strained p-GaAs quantum wells

Journal of Physics: Conference Series 193 (2009) 012103

C. Schindler | P. Vogl

Predictive quantum theory of current and optical emission in quantum cascade lasers

Proc. SPIE 7230, 723019 (2009)

Predictive Quantum Theory of Current and Optical Gain in Quantum Cascade Lasers

Laser Physics 19, 762 (2009)

Pressure induced phase separation in optimally doped bilayer manganites

Applied Physics Letters 94, 061907 (2009)

L. Malavasi | M. Baldini | I. Zardo | M. Hanfland | P. Postorino

Probing the momentum relaxation time of charge carriers in ultrathin semiconductor layers with terahertz radiation

Optics Express 17 (20), 17450-17456 (2009)

S. Funk | G. Acuna | M. Handloser | R. Kersting

Quantum Dots on AlGaInAs Lattice matched to InP emitting at 1.55 µm (Poster)

Nim/CeNS/SFB486 Winterschool 2009, Nanosystems and Sensors, 1.-7. March 2009

Raman Spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

Physical Review B 80, 245324 (2009)

Selective optical charge generation, storage, and readout in a single self-assembled quantum dot

Appl. Phys. Lett. 94, 072108 (2009)

Self-consistent electronic structure method for broken-gap superlattices

Proc. SPIE 7222, 722211 (2009)

T. Andlauer | T. Zibold | P. Vogl

Short-Cavity Long-Wavelength VCSELs with Modulation Bandwidths in Excess of 15 GHz

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 21, NO. 21, NOVEMBER 1, 2009

M. Mueller | W. Hofmann | G. Boehm | M. C. Amann

Short-Injector Quantum Cascade Laser Emitting at 8 µm Wavelength With High Slope Efficiency

IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 21, No. 19, pp. 1384-1386, (2009).

A. Vizbaras | S. Katz | G. Boehm | M. C. Amann

Silicon/organic semiconductor heterojunctions for solar cells

Physica Status Solidi A 206, 2775 (2009)

S. Niesar | R. Dietmueller | H. Nesswetter | H. Wiggers | M. Stutzmann

Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers

Applied Physics Letters 95, 071107 (2009)

K. Vizbaras | K. Kashani-Shirazi | M. C. Amann

Single-mode electrically pumped GaSb-based VCSELs emitting continuous-wave at 2.4 and 2.6 µm

New J. Phys. 11 (2009) 125014 (invited)

A. Bachmann | S. Arafin | K. Kashani-Shirazi

Size-distribution evolution of ion-beam-synthesized nanocrystals in silica

PHYSICAL REVIEW B 80 134121 (2009)

Spin-wave resonances and surface spin pinning in GaMnAs thin films

Phys. Rev. B 79, 045205 (2009)

C. Bihler | W. Schoch | W. Limmer | S. Goennenwein | M. S. Brandt

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

Physical Review B 80, 245325 (2009)

Synthesis parameter space of bismuth catalyzed germanium nanowires

Appl. Phys. Lett. 94, 163101 (2009) featured in Virtual Journal of Nanotechnology

Y. Xiang | L. Cao | J. Arbiol | M. Brongersma | A. Fontcuberta i Morral

Temperature and doping dependence of electron spin relaxation in GaSb

Semicond. Sci. Technol. 24 025018 (2009)

C. Hautmann | F. Jaworeck | K. Kashani-Shirazi | M. C. Amann | M. Betz

The optoelectronic properties of a photosystem I - carbon nanotube hybrid system

Nanotechnology 20, 345701 (2009).

S. Lingitz | F. Simmel | A. Holleitner | I. Carmeli

Theory of nanocluster size distributions from ion beam synthesis

PHYSICAL REVIEW LETTERS 102 146101 (2009)

Theory of non-equilibrium quantum transport and energy dissipation in terahertz quantum cascade lasers

Physical Review B 79, 195323 (2009)

Theory of relaxation and decoherence of intersublevel transitions in semiconductor quantum dots

Journal of Physics: Conference Series 193, 012129 (2009).

T. Grange | R. Ferreira | G. Bastard

Thermal radiation of two-dimensional Bose-Einstein gas of surface plasmons

J. Opt. Soc, Am. B 26, 3, 397-399 (2009)

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

Nanotechnology 20 14574 (2009)

Tuning magnetic properties of magnetoelectric BiFeO3-NiFe2O4

J. Mag. Mag. Mat. 321, L5 (2009)

Ultra-low threshold GaSb-based laser diodes at 2.65 µm

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, (2009)

K. Kashani-Shirazi | A. Bachmann | S. Arafin | K. Vizbaras | M. C. Amann

Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage

Sensors and Actuators B: Chemical 142 1 304-307 (2009)

A. Encabo | J. Howgate | M. Stutzmann | M. Eickhoff | M. A. Sánchez-García

VCSEL-Based Oxygen Sensor for Combustion Optimization in Gas/Oil Furnaces

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, (2009)

J. Chen | A. Hangauer | R. Strzoda | M. Fleischer | M. C. Amann

Voltage controlled inversion of magnetic anisotropy

New J. Phys. 11, 013021 (2009)

1.55-µm VCSEL arrays for high-bandwidth WDM-PONs

IEEE Photonics Technology Letters 20 (2008) 291-293.

107-GHz resonance frequency of 1.55-µm VCSELs under ultra-high optical injection locking

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CMW4

54 GHz multimode VCSELs by optical injection locking

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CPDB1

A Carbon Nano-Filament-Bead necklace

J. of Phys. Chem. C 112, 9644 (2008).

Accurate extraction method of the FM response of VCSELs based on wavelength modulation spectroscopy

Applied Physics B: Lasers and Optics 90 (2008) 243-247.

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Accurate measurement of the wavelength modulation phase shift of tunable vertical-cavity surface-emitting lasers (VCSELs)

Conference on Semiconductor and Integrated Optoelectronics, Cardiff, United Kingdom (2008), 38

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Adjustable chirp injection-locked 1.55-µm VCSELs for enhanced chromatic dispersion compensation at 10-Gbit/s

Proc. of OFC/NFOEC, San Diego USA, 2008, OWT7

Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers

Phys. Rev. B 77, 205210 (2008)

Analysis of the exciton-exciton interaction in semiconductor quantum wells

Phys. Rev. B 78, 045313 (2008)

C. Schindler | R. Zimmermann

Analysis of thermal tuning in vertical-cavity surface-emitting lasers

European Semiconductor Laser Workshop, Eindhoven, The Netherlands (2008)

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration

Microelectronics Journal 39, 485 (2008)

Charge and spin readout scheme for single self-assembled quantum dots

Phys. Rev. B 77, 235442 (2008)

D. Heiss | V. Jovanov | M. Bichler | G. Abstreiter | J. Finley

Compact carbon monoxide sensor using a continuously tunable 2.3 µm single-mode VCSEL

21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, Newport Beach, USA, 721-722 (2008)

Compensation-dependent in-plane magnetization reversal processes in GaMnPS

Phys. Rev. B 78, 214421 (2008)

Continuous wave operation of injectorless quantum cascade lasers at low temperatures

Appl. Phys. Lett., 2008, 92, 181103

S. Katz | A. Friedrich | G. Boehm | M. C. Amann

Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting laser at 2.3 µm

Electr. Lett. 44, 202-203 (2008).

Controlled synthesis of InAs wires, dot and twin-dot array configurations by Cleaved Edge Overgrowth

Nanotechnology 19, 045303 (2008)

E. Uccelli | M. Bichler | S. Nürnberger | G. Abstreiter | A. Fontcuberta i Morral

Data inversion and adjustable chirp in 10-Gbps directly-modulated injection-locked 1.55-µm VCSELs

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CMW5

Diffraction loss in long-wavelength buried tunnel junction VCSELs analyzed with a hybrid coupled-cavity transfer-matrix model

Optics Express 16(25) (2008).

Diffuse x-ray scattering from inclusions in ferromagnetic Ge1-xMnx layers

Phys. Rev. B 78, 144401 (2008)

Dual wavelength emission in injectorless quantum cascade lasers

Proc. of 20th IPRM, 2008, Versailles

S. Katz | M. Maier | G. Boehm | M. C. Amann

Dynamic Photoconductive Gain Effect in Shallow-Etched AlGaAs/GaAs Quantum Wires

Phys. Rev. B 78, 115325 (2008).

Dynamic wavelength tuning behavior of vertical-cavity surface-emitting lasers

Conference on Semiconductor and Integrated Optoelectronics, Cardiff, United Kingdom (2008), 39

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Editorial

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 245 1-2 (2008)

Electrically Pumped GaSb-based VCSEL with Buried Tunnel Junction

Conference on Lasers and Electro-Optics (CLEO), San Jose, USA (2008).

Electronic properties of doped silicon nanocrystal films

JOURNAL OF APPLIED PHYSICS 104 053701 (2008)

Electronic properties of self-assembled alkyl monolayers on Ge surfaces

APPLIED PHYSICS LETTERS 92 223306 (2008)

I. D. Sharp | S. Schoell | M. Hoeb | M. S. Brandt | M. Stutzmann

Electronic tongue based on an integrated multisensory applied to grape juice and wines samples analysis

Analyst, 133, 1440 (2008)

Electronic transport in phosphorus-doped silicon nanocrystal networks

PHYSICAL REVIEW LETTERS 100 2 026803 (2008)

Enzyme-modified field effect transistors based on surface conductive single crystalline diamond

Langmuir 24 (1), 9898 – 9906 (2008)

A. Haertl | B. Baur | M. Stutzmann | J. A. Garrido

Erratum: “Nucleation mechanism of gallium-assisted Molecular Beam Epitaxy growth of Gallium Arsenide nanowires” [Appl. Phys. Lett. 92, 063112 (2008)]

Appl. Phys. Lett. 92, 149903 (2008)

Exciton emission on PTCDA thin films under uniaxial pressure

Phys. Rev. B 77, 115206 (2008)

Exciton phonon coupling in diindenoperylene thin films

Phys. Rev. B 78, 085210 (2008)

Extended near-infrared wavelength VCSELs for optical sensing

IEEE/LEOS Intenational Semiconductor Laser Conference 2008, Sorrento, Italy

Formation of self-assembled quantum dots using ultra low growth rate for applications in the telecommunication regime at 1.3 and 1.5 µm.

The 22nd General Conference of the Condensed Matter Division of the European Physical Society (EPS-CMD 22), Rom, Italy (2008)

Functionalization of 6H-SiC surfaces with organosilanes

APPLIED PHYSICS LETTERS 92 15 153301 (2008)

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

Phys. Rev. B 77, 155326 (2008)

C. Colombo | D. Spirkoska | M. Frimmer | G. Abstreiter | A. Fontcuberta i Morral

GaInAsN growth studies for InP based Long Wavelength Laser Applications

International Conference: 15th ICMBE 2008, Vancouver, Canada published in Journal of Crystal Growth, pp. 1719-1722

T. Gruendl | G. Boehm | R. Meyer | M. C. Amann

GaMnAs/piezoelectric actuator hybrids: A model system for magnetoelastic magnetization manipulation

Phys. Rev. B 78 045203 (2008)

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Journal of Applied Physics 104, 093501 (2008)

GaSb-based Electrically Pumped VCSEL with Buried Tunnel Junction Operating Continuous Wave up to 50°C

21st IEEE International Semiconductor Laser Conference, Sorrento, Italy (2008).

A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Gauge-invariant discretization in multiband envelope function theory and g factors in nanowire dots

Physical Review B 78, 075317 (2008)

T. Andlauer | R. Morschl | P. Vogl

Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

J. Cryst. Growth, 310, 1049 (2008)

Growth mechanisms of self assembled InAs quantum dots on (110) AlAs/GaAs cleaved facets

Superlattices and Microstructures 44, 425 (2008)

E. Uccelli | S. Nürnberger | M. Bichler | G. Abstreiter | A. Fontcuberta i Morral

Growth of antimonides by MOVPE

DPG Fruehjahrstagung, Berlin, Germany, 2008

C. Grasse | R. Meyer | G. Boehm | M. C. Amann

Growth of low density quantum dots on AlGaInAs by MBE using ultra low growth rates

Semiconductor Quantum Dot Devices and Applications, Rennes, France (2008).

Growth of self-assembled quantum dots for single photon application at 1.55 µm

DPG Fruehjahrstagung, Berlin, Germany (2008)

Growth of various antimony-containing alloys by MOVPE

Journal of Crystal Growth 310, 4835-4838 (2008)

C. Grasse | G. Boehm | U. Breuer | R. Meyer | M. C. Amann

Growth of various antimony-containing alloys by MOVPE

14th International Conference on MOVPE, Metz, France (2008)

C. Grasse | G. Boehm | U. Breuer | R. Meyer | M. C. Amann

Highly efficient single-photon emission from single quantum dots within a two-dimensional photonic band-gap

Phys. Rev. B 77, 073312 (2008)

High-speed bi-directional communication using optically injection-locked semiconductor lasers

Proc.of IEEE Annual Workshop on Interconnections within High Speed Digital Systems, Santa Fe USA (2008), MA3

L. Chrostowski | Q. Gu | W. Hofmann | M. C. Amann

Hydrogen passivation of ultra-thin low-temperature polycrystalline silicon films for electronic applications

JOURNAL OF NON-CRYSTALLINE SOLIDS 354 19-25 2314-2318 (2008)

C. Jaeger | T. Antesberger | M. Stutzmann

In situ manipulation of magnetic anisotropy in magnetite thin films

PHYSICAL REVIEW B 77 10 104445 (2008)

Influence of Hofmeister salts on the adhesion of spider silk proteins onto hydrophobic substrates: an AFM-based single molecule study

Langmuir 24 (4), 1350 -1355, 2008

Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

J. Appl. Phys. 104, 064312 (2008)

Injectorless Quantum Cascade Lasers for the Mid-Infrared

Radio Science Bulletin, 2008, 326, p. 20-28

M. C. Amann | S. Katz

Injectorless quantum cascade lasers with threshold current densities below 500 A/cm²

Proc. of 21st ISLC, Sorrent, Italy (2008)

S. Katz | G. Boehm | M. C. Amann

Integrated multi-sensor for FIA-based electronic tongue aplications

IEEE Sensors journal, 8 (5), 608 (2008)

Interlinking Au nanoparticles in 2D arrays via conjugated dithiolated molecules

New J. of Phys 10, 065019 (2008).

Intersublevel polaron dephasing in self-assembled quantum dots

Phys. Rev. B 77, 041307(R) (2008)

E. Zibik | T. Grange | B. Carpenter et al

Investigation of the nonresonant dot-cavity coupling in two-dimensional photonic crystal nanocavities

Phys. Rev. B 77, 161303(R) (2008)

Loading indirect excitons into an electrostatic trap formed in coupled GaAs quantum wells

Phys. E 40, 1828 (2008).

A. Gärtner | D. Schuh | A. Holleitner | J. P. Kotthaus

Local structure of Mn in hydrogenated GaMnAs

Phys. Rev. B 78, 235208 (2008)

Long-wavelength 2-D VCSEL arrays for optical interconnects

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CMW7

Long-wavelength VCSELs and VCSEL arrays for high-speed, high-power and high sensitivity

Proc. of III. International Conference on Laser Processes and Components (LPC) (2008) pp.33

W. Hofmann | G. Boehm | M. Ortsiefer | M. C. Amann

Low-threshold Injectorless Quantum Cascade Laser with Four Material Compositions

Electron. Lett., 2008, 44, pp. 580-581

S. Katz | G. Boehm | M. C. Amann

MBE growth of active regions for electrically-pumped, cw-operating GaSb-based VCSELs

15th international Conference on molecular beam epitaxy (MBE 2008), 3rd - 8th August 2008, Vancouver, Canada (2008)

MBE Growth of active regions for electrically-pumped, cw-operating GaSb-based VCSELs

Journal of Crystal Growth 311 (2009), pp. 1908-1911

K. Kashani-Shirazi | A. Bachmann | G. Boehm | S. Ziegler | M. C. Amann

Micromachined tunable vertical-cavity surface-emitting lasers with narrow linewidth for near infrared gas detection

Proc. SPIE, Vol. 7266, 72660O (2008), Conference on Optomechatronic Technologies, San Diego, USA, 2008

Microscopic theory of spin-filtering in non-magnetic semiconductor nanostructures

phys. stat. sol. (c) 5, 290 (2008)

Microstructured horizontal alumina pore arrays as growth templates for large area few and single nanowire devices

phys.stat.sol. (RRL) 2, 59 (2008)

Y. Xiang | W. Lee | K. Nielsch | G. Abstreiter | A. Fontcuberta i Morral

Mid-Infrared Optical Response of Heavily Doped GaSb:Te

9th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Freiburg, Germany, p. 164-5 (2009)

Modeling nucleation and growth of encapsulated nanocrystals: Kinetic Monte Carlo simulation and rate theory

PHYSICAL REVIEW B 78 245415 (2008)

Modeling of the n-th harmonic spectra used in wavelength modulation spectroscopy and their properties

Applied Physics B: Lasers and Optics 90, 249-254 (2008)

Modelling absorption and photoluminescence of TPD

J. Lumin. 128, 845-7 (2008)

Monolithic 2D high-power arrays of long-wavelength VCSELs

Photonics West, San Jose, USA (2008) 6908-06 pp. 1-7.

W. Hofmann | M. Görblich | M. Ortsiefer | G. Böhm | M. C. Amann

Non-equilibrium quantum transport theory: Current and gain in quantum cascade lasers

J. Comput. Electron. 7, 432 (2008)

T. Kubis | C. Yeh | P. Vogl

Non-magnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting

JOURNAL OF APPLIED PHYSICS 103 123906 (2008)

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Journal of Applied Physics 104 034309 (2008)

Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

Appl. Phys. Lett. 92 063112 (2008)

A. Fontcuberta i Morral | C. Colombo | J. Arbiol | J. R. Morante | G. Abstreiter

Optical detection of single-electron spin resonance in a quantum dot

Phys. Rev. Lett. 100, 156803 (2008).

Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy

Journal of Applied Physics 104 074309 (2008)

Optically induced charge transport through submicron channels

Phys. E 40, 1739 (2008).

K. D. Hof | C. Rossler | W. Wegscheider | S. Ludwig | A. Holleitner

Optically induced transport properties of freely suspended semiconductor submicron channels

Appl. Phys. Lett. 93, 071107 (2008).

Optically injection-locked VCSEL as a duplex transmitter/receiver

IEEE Photonics Technology Letters, Vol. 20, pp.463-465

Q. Gu | W. Hofmann | M. C. Amann | L. Chrostowski

Optically injection-locked VCSEL for bi-directional optical communication

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CMW6

Q. Gu | W. Hofmann | M. C. Amann | L. Chrostowski

Organophosphonate-Based PNA-Functionalization of Silicon Nanowires for Label-Free DNA Detection

ACSNano

Peptide adsorption on a hydrophobic surface results from an interplay of solvation, surface, and intrapeptide forces

Proceedings of the National Academy of Sciences, 105, no. 8 (2008)

Photodoping with CdSe nanocrystals as a tool to probe trap state distributions in C60 crystals

Applied Physics B 93 239 (2008)

Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor

phys. stat. sol. (RRL) 2, 96 (2008)

Potentiometry on pentacene OFETs: Charge carrier mobilities and injection barriers in bottom and top contact configurations

phys. stat. sol. (a) 205, 591 (2008)

R. Scholz | D. Lehmann | A. D. Müller | F. Müller | D. R. T. Zahn

Prismatic Quantum Heterostructures Synthesized on Molecular-Beam Epitaxy GaAs Nanowires

Small, 4, 899 (2008) - highlighted in Nature Materials, 7, 608 (2008)

Quantum Dot Single Photon Source for 1.3 and 1.55 µm (Poster)

1st Joint Nano Workshop, 10.-11. June 2008

Quantum size effects in the optical properties of organic superlattices containing 3,4,9,10 perylene tetracarboxylic dianhydride (PTCDA)

Eur. Phys. J. B (2008), accepted.

I. Vragovic | J. P. Setrajcic | R. Scholz

Quantum size effects in the optical properties of organic superlattices containing 3,4,9,10 perylene tetracarboxylic dianhydride (PTCDA)

Eur. Phys. J. B 66, 185 (2008).

I. Vragovic | J. P. Setrajcic | R. Scholz

Quantum theory of transport and optical gain in quantum cascade lasers

phys. stat. sol. (c) 5, 232 (2008)

T. Kubis | C. Yeh | P. Vogl

Rabi splitting and ac-Stark shift of a charged exciton

Appl. Phys. Lett. 92, 031108 (2008).

Realisation of Long Wavelength Lasers Based on InP Substrate

Invited talk: Graduierten Kolleg 2008, Darmstadt, Germany

T. Gruendl | G. Boehm | R. Meyer | M. C. Amann

Recent Progress and Prospects on GaSb-based BTJ-VCSELs

International Semiconductor Laser Workshop, San Jose, USA (2008).

A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Recent progress on electrically-pumped GaSb-based VCSELs emitting above 2 µm for sensing applications

9th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, Freiburg, Germany (2008) (invited).

Reduction of hetero-interface resistivity in n-type AlAsSb/GaSb distributed Bragg reflectors

Semicond. Sci. Technol. 23 (2008) 025018.

Resolving the controversy on the pH sensitivity of diamond surfaces

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 2 31-33 (2008)

M. Dankerl | A. Reitinger | M. Stutzmann | J. A. Garrido

Resonant saturation laser spectroscopy of a single self-assembled quantum dot

Phys. E 40, 1994 (2008).

Resonant transmission spectroscopy on the p to p transitions of a charge tunable InGaAs quantum dot

Appl. Phys. Lett. 92, 153103 (2008).

Resonant two-color high-resolution spectroscopy of a negatively charged exciton in a self-assembled quantum dot

Phys. Rev. B 78, 075429 (2008).

Room Temperature Nanoimprint Lithography Using Molds Fabricated by Molecular Beam Epitaxy

IEEE Transactions on Nanotechnology 7, 363 (2008)

S1-S0 transition of 2,3-benzofluorene in the gas phase

J. Chem. Phys. 129, 74302 (2008)

Self-assembly of InAs quantum dot structures on cleaved facets

in “Self-Assembled Quantum Dots”, Edited by Z. Wang, Springer-Verlag (2008)

Shadow modulated two-dimensional heterostructures using vertical pillars

Appl. Phys. Lett. 92, 173505 (2008)

Silicon based nanogap device for studying electrical transport phenomena in moleculenanoparticle

Journal of Physics: Condensed Matter - special issue: Charge transport in nanoscale junctions 20, 374126 (2008)

S. Strobel | R. Hernandez | A. G. Hansen | M. Tornow

Silicon Photonic Crystal Nanostructures for Refractive Index Sensing

Appl. Phys. Lett. 93, 181103 (2008)

Silicon-on-insulator based nanopore cavity arrays for lipid membrane investigation

Nanotechnology 19 (2008)

Simplified model of the dynamic thermal tuning behavior of Vertical-Cavity Surface-Emitting Lasers

IEEE Photonics Technology Letters 20, 1082 – 1084 (2008)

J. Chen | A. Hangauer | M. C. Amann

Simulation of active regions for GaSb-based VCSELs

Conference proceedings to the International Nano Optoelectronics Workshop, Tokyo, Saiko and Shonan, Japan (2008)

K. Kashani-Shirazi | A. Bachmann | S. Arafin | S. Ziegler | M. C. Amann

Simulation of quantum cascade lasers - optimizing laser performance

Photonik international 2, 60 (2008)

S. Birner | T. Kubis | P. Vogl

Simulation zur Optimierung von Quantenkaskadenlasern

Photonik 1/2008, 44 (2008)

S. Birner | T. Kubis | P. Vogl

Single-mode Continuous Wave Operation of Electrically Pumped 2.25 µm GaSb-based VCSEL

20th International Conference on Indium Phosphide and Related Materials, Versailles, France (2008).

Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

Applied Physics Letters 93, 132102 (2008)

Size and environment dependence of surface phonon modes of gallium arsenide nanowires as measured by Raman spectroscopy

Nanotechnology 19, 435704 (2008)

D. Spirkoska | G. Abstreiter | A. Fontcuberta i Morral

Small Signal Dynamics of an Electrically-Pumped Long-Wavelength Tunable VCSEL

IEEE 21st International Semiconductor Laser Conference (ISLC), Sorrento, Italy (2008)

Spin echoes in the charge transport through phosphorus donors in silicon

PHYSICAL REVIEW LETTERS 100 17 177602 (2008)

Square root law thermal response in VCSELs: Experiment and theory

IEEE/LEOS Conference on Lasers and Electro-Optics, San Jose, USA (2008), JThA27

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Statistics of quantum dot exciton fine structure splittings and their polarization orientations

Phys. E 40, 2153 (2008).

Subwavelength gratings as polarization selective reflectors

DPG Fruehjahrstagung, Berlin, Germany (2008).

N. Muenzenrieder | T. Lim | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

J. Appl. Phys. 104 013908 (2008)

The diamond/aqueous electrolyte interface: An impedance investigation

LANGMUIR 24 8 3897-3904 (2008)

J. A. Garrido | S. Nowy | A. Haertl | M. Stutzmann

The surface conductivity at the Diamond/Aqueous electrolyte interface

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 130 12 4177-4181 (2008)

The use of molecular beam epitaxy for the synthesis of high purity III–V nanowires

J. Phys.: Condens. Matter 20, 454225 (2008)

D. Spirkoska | C. Colombo | M. Heiß | G. Abstreiter | A. Fontcuberta i Morral

Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor

J. Phys.: Conf. Ser. 107, 012002 (2008)

S. Birner | C. Uhl | M. Bayer | P. Vogl

Top-Down versus Bottom-Up

Nanotechnology, Volume 1: Principles and Fundamentals, edited by Günter Schmid.
WILEY-VCH Verlag GmbH & C KGaA, Weinheim.
ISBN: 978-3-527-31732-5 (2008).

W. J. Parak | F. C. Simmel | A. Holleitner

Towards an electrically driven single photon source

DPG Fruehjahrstagung, Berlin, Germany (2008)

Towards an Electro-Optically Driven Single Photon emitting Device

The 8th International conference on Nanotechnology (IEEE-nano2008), Arlington Texas, USA (2008)

Transmission of light generated in a Silicon Photonic Crystal Nanocavity through a Lateral Waveguide

submitted

Tunable single quantum dot nanocavities for cavity QED experiments

J. Phys.: Condens. Matter 20, 454209 (2008)

Ultra-thin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange

JOURNAL OF NON-CRYSTALLINE SOLIDS 354 19-25 2324-2328 (2008)

T. Antesberger | C. Jaeger | M. Stutzmann

Untitled

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 205 1-2 (2008)

Wavelength modulation spectroscopy with a widely tunable InP-based 2.3 µm vertical-cavity surface-emitting laser

Optics Letters 33, 1566-1568 (2008)

A. Hangauer | J. Chen | R. Strzoda | M. Ortsiefer | M. C. Amann

1 x 12 VCSEL array at 1.55 µm for high-bandwidth at metro-range

Proc. of European Conference on Optical Communications (ECOC) 2007, Berlin, Germany (2007) 211-212.

W. Hofmann | E. Wong | G. Böhm | M. Ortsiefer | M. C. Amann

40 GHz bandwidth and 64 GHz resonance frequency in injection-locked 1.55 µm VCSELs

IEEE J. of Selected Topics in Quantum Electronics 13 (2007) 1200-1208.

A photosynthetic reaction center covalently bound to carbon nanotubes

Adv. Mat. 19, 3901 (2007).

A silicon-on-insulator vertical nanogap device for electrical transport measurements in aqueous electrolyte solution

Nanotechnology 18, 295201 (2007)

S. Strobel | K. Arinaga | A. G. Hansen | M. Tornow

Absorption of Frenkel excitons in PTCDA thin films, in PTCDA/Alq3 multilayers and in co-deposited films

Proc. 28th Int. Conf. Physics of Semiconductors (ICPS-28), Wien, 2006; AIP Conf. Proc. 893, 357-8 (2007)

Adsorption geometry of PTCDA and NTCDA on Ag(110): Comparison of density functional calculations and second order Moller-Plesset perturbation theory

Phys. Rev. Lett., submitted (2007)

A. Abbasi | R. Scholz

Black multi-crystalline silicon solar cells

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 2 R53-R55 (2007)

Capacitive contacts: making four-point characterizations without ohmic contacts

Intern. Journal of Modern Physics B 21, 1435-1439 (2007)

N. Isik | M. Bichler | S. Roth | M. Grayson

Concerning the 506cm-1 band in the Raman spectrum of silicon nanowires

Appl. Phys. Lett. 91, 123107 (2007)

J. D. Prades | A. Cirera | J. Arbiol | J. R. Morante | A. Fontcuberta i Morral

Controlling the surface density of DNA on gold by electrically induced desorption

Biosensors and Bioelectronics 23, 326-331 (2007)

Covalently immobilized cytochrome c on self-assembled monolayers on ultrananocrystalline diamond electrodes

NSTI Nanotechnology Conference and Trade Show - Nanotech 2007, Santa Clara

Dimensionally constrained D'yakonov-Perel' spin relaxation in n-InGaAs channels: transition from 2D to 1D

New Journal Of Physics 9, 342 (2007)

A. Holleitner | V. Sih | R. C. Myers | A. C. Gossard | D. D. Awschalom

Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

Appl. Phys. Lett. 91, 142120 (2007)

Dual-resonance frequency response in injection-locked 1.55 µm VCSELs

OFC/NFOEC, Anaheim, USA (2007) 1-3.

B. Faraji | L. Chrostowski | W. Hofmann | M. C. Amann

Efficient spatial redistribution of quantum dot spontaneous emission from two-dimensional photonic crystals

Appl. Phys. Lett. 91, 061106 (2007)

Electrical Manipulation of DNA on Metal Surfaces

Book article “NanoBioTechnology: BioInspired devices and materials of the future", I. Levy and O. Shoseyov (Eds.), Humana Press (2007)

M. Tornow | K. Arinaga | U. Rant

Electrically detected ferromagnetic resonance

APPLIED PHYSICS LETTERS 90 16 162507 (2007)

Electrically probing photonic bandgap phenomena in contacted defect nanocavities

Appl. Phys. Lett. 91, 201111 (2007)

Electroluminescence from electrically pumped GaSb-based VCSELs

Springer Proceedings in Physics (2007).

Electronic structure and transport for nanoscale device simulation

in: "Materials for Tomorrow. Theory, Experiments and Modelling" (Springer Series in Materials Science), ed. by S. Gemming, M. Schreiber, J.B. Suck, Springer (2007), pp 123-146

A. Trellakis | P. Vogl

Electronic transport through Si nanocrystal films: Spin-dependent conductivity studies

PHYSICA B-CONDENSED MATTER 401 527-530 (2007)

Exciton-Exciton interaction in coupled quantum wells

Solid State Comm. 144, 395 (2007)

R. Zimmermann | C. Schindler

Experimental characterization of the frequency modulation behavior of vertical cavity surface emitting lasers

Applied Physics Letters 91 (2007) 141105.

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Fabrication of freestanding GaN microstructures using AlN sacrificial layers

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 1 R10-R12 (2007)

E. Zaus | M. Hermann | M. Stutzmann | M. Eickhoff

First results of electrically pumped GaSb-based VCSELs

13th Conference on Narrow Gap Semiconductors, Guildford, United Kingdom (2007).

Formation of self-assembled quantum dots on AlInAs and GaInAs matrices using a GaSb sublayer

Applied Physics Letters 91 (2007) 083111-3.

R. Enzmann | S. Dachs | R. Meyer | J. Finley | M. C. Amann

Future-proof WDM-PONs with bandwidth/wavelength upgradeable VCSEL arrays

Proc. of European Conference on Optical Communications (ECOC) 2007, Berlin, Germany (2007) 5 pp. 277-278.

E. Wong | W. Hofmann | M. C. Amann

Gas Sensing Interactions at Hydrogenated Diamond Surfaces

Sensors Journal, IEEE 7 9 1349-1353 (2007)

Growth and fabrication of electrically pumped GaSb-based VCSELs

EURO-MBE, Granada, Spain (2007).

O. Dier | C. Lauer | A. Bachmann | T. Huesgen | M. C. Amann

Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3µm

Journal of Crystal Growth 301 (2007) 941-944.

Growth of low density quantum dots on AlInAs and GaInAs using a thin GaSb sublayer

LWQD International Workshop on Long Wavelength Quantum Dots: Growth and Applications, Rennes, France (2007).

R. Enzmann | S. Dachs | R. Meyer | J. J. Finley | M. C. Amann

Guided self assembly of InAs quantum dots on a cleaved facet

Mater. Res. Soc. Symp. Proc. 959 M-16-02 (2007)

High-Aspect Ratio Nanogap Electrodes for Averaging Molecular Conductance Measurements

Small 3, 285 – 289 (2007)

High-power 1.55 µm VCSEL arrays

Conference on Lasers and Electro-Optics CLEO Europe /IQEC, Munich, Germany (2007) pp. 1.

High-speed 1.55 µm VCSELs

OECC/IOOC, Yokohama Kanagawa, Japan (2007) 408-409 (invited).

M. C. Amann | W. Hofmann

High-speed laser transmitters using cascaded optical injection locking

Nano-Optoelectronics Workshop, i-NOW 07, Beijing, China (2007) 196-197.

Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?

APPLIED PHYSICS LETTERS 90 021920 (2007)

Immobilization of horseradish peroxidase via an amino silane on oxidized ultrananocrystalline diamond

DIAMOND AND RELATED MATERIALS 16 1 138-143 (2007)

Incorporation behaviour of nitrogen in GaInAs layers based on InP substrate for indium concentrations from 0 to 100%.

Deutscher MBE Workshop 2007 (Forschungszentrum Jülich)

T. Gruendl | G. Boehm | R. Meyer | M. C. Amann

Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the Vapor-Solid-Solid mechanism

Nanotechnology 18, 305606 (2007)

J. Arbiol | B. Kalache | P. R. I. Cabarrocas | J. R. Morante | A. Fontcuberta i Morral

It's time to celebrate!

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 244 1 11-12 (2007)

It's time to celebrate!

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 204 1 9-10 (2007)

Kinetics of visible light photo-oxidation of Ge nanocrystals: Theory and in situ measurement

APPLIED PHYSICS LETTERS 90 163118 (2007)

Light-induced dielectrophoretic manipulation of DNA

BIOPHYSICAL JOURNAL 93 1032-1038 (2007)

M. Hoeb | J. O. Radler | S. Klein | M. Stutzmann | M. S. Brandt

Linewidth of electrically pumped long-wavelength MEMS VCSELs

Conference on Lasers and Electro-Optics (CLEO) /Europe, Munich, Germany (2007).

Logarithmically accurate total integrated cross sections for fast electron scattering on atoms

Tech. Phys. 52, 1, 35-38 (2007)

B. A. Zon | V. B. Zon

Long-wavelength (L = 1.55 µm) monolithic VCSEL array with >3 W CW output power

Electronics Letters 43 (2007) 1025-1026.

W. Hofmann | M. Görblich | M. Ortsiefer | G. Böhm | M. C. Amann

Long-wavelength high-power VCSEL arrays

European Semiconductor Laser Workshop (ESLW), Berlin, Germany (2007).

W. Hofmann | M. Görblich | M. Ortsiefer | G. Böhm | M. C. Amann

Long-wavelength VCSELs for optical networks and trace-gas monitoring

Optics East, Baltimore, USA (2007) 67660F pp. 1-13 (invited).

Magnetocrystalline anisotropy and magnetization reversal in Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting

Phys. Rev. B 75, 214419 (2007)

Metallic and insulating states at a bent quantum Hall junction

Phys. Rev. B 76, 201304 (2007)

Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells

Phys. Rev. B 76, 085304 (2007)

A. Gärtner | L. Prechtel | D. Schuh | A. Holleitner | J. P. Kotthaus

Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron-hole interaction

physica status solidi (a) 204 2 447-458 (2007)

Moving Nanoparticles with Raman Scattering

Nano Lett. 7 (9), 2753-2757 (2007)

New growth mechanisms of polycyclic unsaturated hydrocarbons: Reactions with methyne in the interstellar medium

Astronomy & Astrophysics, submitted (2007)

R. Barthel | G. Seifert | R. Scholz

New method based on wavelength modulation spectroscopy for measurement and characterization of the current to wavelength tuning frequency response of VCSEL

Book of Abstracts, International Conference on Tunable Diode Laser Spectroscopy, Reims, France (2007)

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

nextnano: General Purpose 3-D Simulations

IEEE Transactions on Electron Devices 54, 2137 (2007)

Noise characteristic and quality investigation of ultrafast avalanche photodiodes

Fluctuation and Noise Letters, Vol. 7, Issue 3, pp. 379-389, (2007)

S. Pralgauskaite | V. Palenskis | J. Matukas | A. Vizbaras

Novel cascaded injection-locked 1.55-µm VCSELs with 66 GHz modulation bandwidth

Opt. Express 15 (2007) 14810-14816.

Novel one-dimensional states in a bent quantum hall junction

Intern. Journal of Modern Physics B 21, 1207-1208 (2007)

Observation of extremely slow hole spin relaxation in self-assembled quantum dots

Phys. Rev. B 76, 241306(R) (2007)

Optical characterization of silicon on insulator photonic crystal nanocavities infiltrated with colloidal PbS quantum dots

Appl. Phys. Lett. 91, 233111 (2007)

D. F. Dorfner | T. Hürlimann | G. Abstreiter | J. J. Finley

Optical injection locking of VCSEL with amplitude modulated master

IEEE Int. Topical Meeting on Microwave Photonics, Victoria, Canada (2007) 183-186.

pH Sensitivity of Gallium Arsenide (GaAs) Electrodes Functionalized with Methy-Mercaptobiphenyl Monolayers

J. Phys. Chem. C. 111, 12414-12419 (2007)

Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

PHYSICA B-CONDENSED MATTER 401 541-545 (2007)

Polaron relaxation in self-assembled quantum dots: Breakdown of the semiclassical model

Phys. Rev. B 76, 241304(R) (2007)

T. Grange | R. Ferreira | G. Bastard

Progress in mid-infrared vertical-cavity surface-emitting lasers with electrical pumping

MIOMD International Conference on Mid-Infrared Optoelectronics Materials and Devices, Bad Ischl, Austria (2007) (invited).

C. Lauer | O. Dier | A. Bachmann | T. Huesgen | M. C. Amann

pss Rapid Research Letters - the fastest peer-reviewed publication medium in solid state physics

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 1 1-2 (2007)

Quantum dot charge and spin memory devices

Invited book article for “Handbook for Self-Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics”, Edited by M. Henini, Elsevier (2007)

J. J. Finley

Quantum-cascade lasers without injector regions

Conf. Proc. of Photonics West, SPIE (International Society for Optical Engineering), San Jose, USA (2007) 648507-1-13 (invited).

A. Friedrich | M. C. Amann

Rayleigh backscattering and extinction ratio study of optically injection-locked 1.55 µm VCSELs

Electronics Letters 43 (2007) 182-183.

E. Wong | X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Realization of a tunnel-junction for electrically-pumped GaSb-based vertical-cavity surface-emitting lasers for sensing applications

European Semiconductor Laser Workshop (ESLW), Berlin, Germany (2007).

Reconstruction of the transmission from n-th harmonic spectra

FLAIR Conference, Florence, Italy (2007), Post Deadline Paper

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Reflection, refraction, and transformation into photons of surface plasmons on a metal wedge

J. Opt. Soc. Am. B 24, 8, 1960-1967 (2007)

V. B. Zon

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

Phys. Rev. B 75, 035309 (2007)

J. M. Zahler | A. Fontcuberta i Morral | M. Griggs | H. A. Atwater | Y. J. Chabal

Scaling rules for high-power 1.55 µm VCSEL arrays

Conference on Lasers and Electro-Optics CLEO/QELS, Baltimore, USA (2007) CTuGG3.

W. Hofmann | G. Böhm | M. Ortsiefer | M. C. Amann

Self- and foreign-atom diffusion in semiconductor isotope heterostructures Part II: Experimental results for silicon

PHYSICAL REVIEW B 75 035211 (2007)

H. Bracht | H. H. Silvestri | I. D. Sharp | E. E. Haller

Self-consistent quantum transport theory: Applications and assessment of approximate models

J. Comput. Electron. 6, 183 (2007)

Short-wavelength intersubband staircase lasers, with and without AlAs-blocking barriers

Semiconductor Science and Technology 22 (2007) 218-221.

A. Friedrich | G. Böhm | M. C. Amann

Singlet and triplet polaron relaxation in doubly charged self-assembled quantum dots

New J. Phys. 9 259 (2007)

T. Grange | E. Zibik | R. Ferreira et al

SnO2:Sb - A novel material for high-temperature MEMS heater elements - performance and limitations

Sensors and Actuators B 124, p. 421-428 (2007)

J. Spannhake | A. Helwig | G. Müller | T. Wassner | M. Eickhoff

Stark shift of interband transitions in AlN/GaN superlattices

Applied Physics Letters 90 241906 (2007)

Straightforward modeling of the nth harmonic signals used in wavelength modulation spectroscopy and their mathematical properties

Book of Abstracts, TDLS International Conference on Tunable Diode Laser Spectroscopy, Reims, France (2007)

Structural and electronic properties of ultrathin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange

APPLIED PHYSICS LETTERS 91 201909 (2007)

T. Antesberger | C. Jaeger | M. Scholz | M. Stutzmann

Structural, optical, and electronic properties of nanocrystalline and ultrananocrystalline diamond thin films

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 204 2874-2880 (2007)

Structured polymer grafts on diamond

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 129 15655-15661 (2007)

Subnanosecond ellipticity detector for laser radiation

Appl. Phys. Lett. 91, 091101 (2007)

Surface plasmons on a right angle metal wedge

J. Opt. A: Pure Appl. Opt. 9, S476 – S480 (2007)

V. B. Zon

Switchable DNA interfaces for the highly sensitive detection of label-free DNA targets

Proc. Nat. Acad. Sci. Am. 104, No 44, 17364–17369 (2007)

Synthesis of silicon nanowires with wurtzite crystalline structure by standard Chemical Vapour Deposition

Adv. Mater. 19, 1347-1351 (2007)

A. Fontcuberta i Morral | J. Arbiol | J. D. Prades | A. Cirera | J. R. Morante

The fastest peer-reviewed publication medium in solid state physics

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 2 19-20 (2007)

The ion sensitivity of surface conductive single crystalline diamond

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 129 5 1287-1292 (2007)

Theory of semiconductor quantum-wire based single- and two-qubit gates

Phys. Rev. B 76, 195301 (2007)

T. Zibold | P. Vogl | A. Bertoni

Thermoelectric effect in laser annealed printed nanocrystalline silicon layers

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 262-264 (2007)

Three-Dimensional Si/Ge Quantum Dot Crystals

Nano Letters 7 (10), 3150 (2007)

Widely tunable twin-guide laser diodes with sampled gratings: design and performance

IEEE J. of Selected Topics in Quantum Electronics 13 (2007) 1095-1103.

10-Gb/s data transmission using BCB passivated 1.55-µm InGaAlAs-InP VCSELs

IEEE Photonics Technology Letters 18 (2006) 424-426.

40 GHz bandwidth and 64 GHz resonance frequency in injection-locked 1.55 µm VCSELs

IEEE International Semiconductor Laser Conference, Waikoloa, USA (2006) 117-118.

Activated transport in the vT = 1 exciton condensate at balanced and imbalanced densities measured in drag and counter-flow configuration

Physica E 34, 16-21 (2006)

Adjustable mode coupling in spatially coincident one-dimensional electron systems

Physica E 34, 568-571 (2006)

S. F. Fischer | G. Apetrii | U. Kunze | D. Schuh | G. Abstreiter

Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As

PHYSICAL REVIEW B 74 20 205205 (2006)

Anomalous charge relaxation in channels of pentacene-based organic field-effect transistors: a charge transient spectroscopy study

phys. stat. sol. (a) 203, 2326-40 (2006)

I. Thurzo | B. A. Paez | H. Mendez | R. Scholz | D. R. T. Zahn

Band offset measurements of quinternary (AlGaIn)(AsSb)

DPG Fruehjahrstagung, Dresden, Germany (2006).

A. Bachmann | O. Dier | C. Lauer | R. Meyer | M. C. Amann

BCB-passivated 1.55 µm VCSELs for high speed applications

Nano- Optoelectronic Workshop and BaCaTec Summer School in Advances of Photonics, Berkeley, USA (2006) Poster.

W. Hofmann | M. C. Amann

Black nonreflecting silicon surfaces for solar cells

APPLIED PHYSICS LETTERS 88 20 203107 (2006)

Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors

Applied Physics Letters 89 18 183901 (2006)

Chemical grafting of biphenyl self-assembled monolayers on ultrananocrystalline diamond

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 128 51 16884-16891 (2006)

Chipbasiertes Tumor-Monitoring System für die radiotherapeutische Intervention

Jahrestagung der Deutschen Gesellschaft für Medizinische Physik e.V., Regensburg, Germany (2006).

H. Grothe | J. Freyer | B. Wolf | M. C. Amann

Clustering in a Precipitate-Free GeMn Magnetic Semiconductor

Phys. Rev. Lett. 97, 237202 (2006)

D. Bougeard | S. Ahlers | A. Trampert | N. Sircar | G. Abstreiter

Compositional tuning of magnetism and electronic transport in Ga1-xMnxP

SOLID STATE COMMUNICATIONS 140 443 (2006)

Direct biofunctionalization of semiconductors: A survey

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 14 3424-3437 (2006)

M. Stutzmann | J. A. Garrido | M. Eickhoff | M. S. Brandt

Direct modulation of widely tunable twin-guide lasers

IEEE Photonics Technology Letters 18 (2006) 1293-1295.

Direct observation of acoustic phonon mediated relaxation between coupled exciton states in a single quantum dot molecule

Phys. Rev. B 74, 121305(R) (2006)

Direct-bonded GaAs/InGaAs tandem solar cel

Appl. Phys. Lett. 89, 102106 (2006)

K. Tanabe | A. Fontcuberta i Morral | D. J. Aiken | M. W. Wanlass | H. A. Atwater

Disordered AlAs wires: Temperature-dependent resonance areas within the Fermi liquid paradigm

Phys. Rev. B 74, 193307 (2006)

Dissimilar Kinetic Behavior of Electrically Manipulated Single-and Double-Stranded DNA Tethered to a Gold Surface

Biophysical Journal, Vol. 90, 3666-3671 (2006)

Drift mobility of long-living excitons in coupled GaAs quantum wells

Applied Physics Letters 89, 052108 (2006)

A. Gaertner | A. Holleitner | J. P. Kotthaus | D. Schuh

Dynamics of end grafted DNA molecules

phys. stat. sol. (a) (14) 203, 3476-3491 (2006)

Editorial

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 243 1 11-11 (2006)

Editorial

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 1 7-8 (2006)

Effect of nitrogen on the electronic properties of ultrananocrystalline diamond thin films grown on quartz and diamond substrates

PHYSICAL REVIEW B 74 15 155429 (2006)

Efficient Solution of the Schrödinger-Poisson Equations in Semiconductor Device Simulations

LSSC 2005, Lecture Notes in Computer Science 3743, 602 (2006)

A. Trellakis | T. Andlauer | P. Vogl

Electrical detection of coherent P-31 spin quantum states

NATURE PHYSICS 2 12 835-838 (2006)

Electrical Manipulation of Oligonucleotides Grafted to Charged Surfaces

Organic & Biomolecular Chemistry 4, 3448-4355 (2006)

Electrically detected magnetic resonance in ion-implanted Si : P nanostructures

APPLIED PHYSICS LETTERS 89 18 182115 (2006)

Electron correlations on the fractional quantum Hall edge

Solid State Commun. 140, 66 (2006)

M. Grayson

Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen

APPLIED PHYSICS LETTERS 88 2 024101 (2006)

Energy spectroscopy of controlled coupled quantum-wire states

Nature Physics 2, 91-96 (2006)

S. F. Fischer | G. Apetrii | U. Kunze | D. Schuh | G. Abstreiter

Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs

Appl. Phys. Lett. 89, 023103 (2006)

Evidence for excitonic polarons in InAs/GaAs quantum dots

Phys. Rev. B 73, 075320 (2006)

V. Preisler | T. Grange | R. Ferreira et al

Exciton absorption in PTCDA films, in PTCDA/Alq3 multilayers and in co-deposited films

Phys. Rev. B 73, 125323 (2006)

Fabrication of widely tunable (> 40 nm) twin-guide laser diodes

International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan (2006).

R. Meyer | R. Todt | T. Jacke | M. C. Amann

Ferromagnetic Ge(Mn) nanostructures

Physica E 32, 422-425 (2006)

Frontiers in Semiconductor Nanoscience

Part A: Phys. Stat. Sol. (a) 203, 14, 3399-3618 (2006)
Part B: Phys. Stat. Sol. (b) 243, 14, 3575-3774 (2006)

J. Finley | M. Grayson | M. Tornow

Halbleiterlichtquellen - Anwendungen in der Gasanalyse

OTTI - Fachforum, Regensburg, Germany (2006) (invited).

High speed (> 11 GHz) modulation of BCB-passivated 1.55 µm InGaAlAs-InP VCSELs

Electronics Letters 42 (2006) 976-978.

High speed modulation of BCB-passivated 1.55 µm VCSELs

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Duisburg, Germany (2006) 119-121.

High-temperature, low-threshold injectorless quantum-cascade lasers, emitting at 6.8µm

IEEE Internat. Semicond. Laser Conf., Kohala Coast, Hawaii (2006).

A. Friedrich | C. Huber | G. Böhm | M. C. Amann

Impact of silicon incorporation on the formation of structural defects in AlN

JOURNAL OF APPLIED PHYSICS 100 113531 (2006)

Indium nitride and indium rich related alloys: Challenges and opportunities

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 1 11-11 (2006)

M. Leszcynski | P. Ruterana | M. Stutzmann | C. Wood

Influence of Indium-free sublayers on the formation of self-assembled quantum dots on InP(001)-Substrates

DPG Fruehjahrstagung, Dresden, Germany (2006).

R. Enzmann | S. Dachs | G. Böhm | R. Meyer | M. C. Amann

Influence of the Jahn-Teller effect on absorption and photoluminescence spectra of Si nanocrystals

phys. stat. sol (c) 3, 3561-4 (2006)

R. Scholz | D. Pouladsaz | M. Schreiber

Injectorless quantum cascade lasers

2nd International Workshop on Quantum Cascade Lasers, Marina di Ostuni, Italy (2006) (invited).

InP-based VCSELs with buried tunnel junction for optical communication and sensing in the 1.3-2.3 µm wavelength range

IEEE International Semiconductor Laser Conference (ISLC), Waikoloa, USA (2006) 113-114.

Large melting point hysteresis of Ge nanocrystals embedded in SiO2

PHYSICAL REVIEW LETTERS 97 155701 (2006)

Linear optical properties of perylene-based chromophores

Chem. Phys. 325, 9-21 (2006)

R. Scholz | M. Schreiber

Linear optical properties of perylene-based chromophores

Chem. Phys. 325, 9 (2006).

R. Scholz | M. Schreiber

Long wavelength edge-emitting laser diodes with quinternary AlGaInAsSb barrier material

Nano- Optoelectronic Workshop and BaCaTec Summer School of Advances in Photonics, Berkeley, USA (2006).

Long-wavelength (1.3 µm) InGaAlAs-InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing

physica status solidi (a) 203 (2006) 3538-3544 (invited).

M. C. Amann | M. Ortsiefer

Low-resistive metal/n+-InAsSb/n-GaSb contacts

Semiconductor Science and Technology 21 (2006) 1274-1277.

C. Lauer | O. Dier | M. C. Amann

Low-resistive tunnel junctions and metal to n-type semiconductor contacts for GaSb-based devices

International Symposium on Compound Semiconductors (ISCS), Vancouver, Canada (2006).

C. Lauer | O. Dier | M. C. Amann

Low-threshold quantum cascade lasers without injector regions, emitting at 6.7µm

International Conference on Indium Phosphide and Related Materials (IPRM), Princeton, USA (2006) 19-22.

A. Friedrich | G. Böhm | M. C. Amann

Low-threshold room-temperature operation of injectorless quantum-cascade lasers: influence of doping density

Electronics Letters 42 (2006) 1228-1229.

A. Friedrich | C. Huber | G. Böhm | M. C. Amann

Luminescence properties of highly Si-doped AlN

APPLIED PHYSICS LETTERS 88 7 071906 (2006)

Magnetic and structural properties of GexMn1-x films: Precipitation of intermetallic nanomagnets

Phys. Rev. B 74, 214411 (2006)

S. Ahlers | D. Bougeard | N. Sircar | G. Abstreiter

Magnetic anisotropy in (Ga,Mn)As on GaAS(113)As studied by magnetotransport and ferromagnetic resonance

MICROELECTRONICS JOURNAL 37 12 1490-1492 (2006)

Magnetic anisotropy of Ga1-xMnxAs thin films on GaAs (311)A probed by ferromagnetic resonance

APPLIED PHYSICS LETTERS 89 1 012507 (2006)

MEMS-tunable 1.55-µm VCSEL with extended tuning range incorporating a buried tunnel junction

IEEE Photonics Technology Letters 18 (2006) 688-690.

M. Maute | B. Kögel | G. Böhm | P. Meissner | M. C. Amann

Metal-induced seeding of macropore arrays in silicon

ADVANCED MATERIALS 18 5 633-+ (2006)

Mn L3,2 X-ray absorption and magnetic circular dichorism in ferromagnetic Ga1-xMnxP

APPLIED PHYSICS LETTERS 89 012504 (2006)

Modeling of semiconductor nanostructures with nextnano³

Acta Physica Polonica A 110, 111 (2006)

Modulation efficiency enhancement of 1.55-µm injection-locked VCSELs

IEEE International Semiconductor Laser Conference, Waikoloa, USA (2006) 125-126.

X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Multiband GaNAsP quaternary alloys

APPLIED PHYSICS LETTERS 88 092110 (2006)

Multi-sensor array used as an “electronic tongue” for mineral water analysis

Sensors and Actuators B 116, 130 (2006)

L. Moreno Codinachs | A. Merlos | N. Abramova | C. Jiménez | A. Bratov

Nanotechnology: An Introduction to Technological and Scientific Aspects

TTN Forum 5, 17-32 (2006)

Nearly stress-free substrates for GaN homoepitaxy

JOURNAL OF CRYSTAL GROWTH 293 2 462-468 (2006)

n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity

Electronics Letters 42 (2006) 419-420.

O. Dier | C. Lauer | M. C. Amann

Nonequilibrium carrier dynamics in self-assembled InGaAs quantum dots

phys. stat. sol. (b) 243, 2217 (2006)

Nonlinear optical response of a single self-assembled InGaAs quantum dot: A femtojoule pump-probe experiment

Appl. Phys. Lett. 88, 203110 (2006)

Novel modulated-master injection-locked 1.55 µmVCSELs

Nano- Optoelectronic Workshop and BaCaTec Summer School in Advances of Photonics, Berkeley, USA (2006) Poster.

X. Zhao | Y. Zhou | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Novel modulated-master injection-locked 1.55-µm VCSELs

Opt. Express 14 (2006) 10500-10507.

X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Observation of incubation times in the nucleation of silicon nanowires obtained by the Vapor-Liquid-Solid method

Jap. J. Appl. Phys. 45 , L190 (2006)

B. Kalache | P. R. I. Cabarrocas | A. Fontcuberta i Morral

Optical properties of nanocrystalline diamond thin films

APPLIED PHYSICS LETTERS 88 10 101908 (2006)

Optical properties of PTCDA bulk crystals and ultrathin films

Materials Science Forum 518, 41-6 (2006)

I. Vragovic | R. Scholz | J. P. Setrajcic

Optically injection-locked 1.55 µm VCSELs as upstream transmitters in WDM passive optical networks

Nano- Optoelectronic Workshop and BaCaTec Summer School in Advances of Photonics, Berkeley, USA (2006) Poster.

E. Wong | X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Optically injection-locked 1.55-µm VCSELs as upstream transmitters in WDM-PONs

IEEE Photonics Technology Letters 18 (2006) 2371-2373.

E. Wong | X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Optically Probing Spin and Charge Interactions in a Tunable Artificial Molecule

Phys. Rev. Lett. 97, 076403 (2006)

Phosphorus donors in highly strained silicon

PHYSICAL REVIEW LETTERS 97 16 166402 (2006)

Photosensitivity and Noise Characteristic Investigation of Ultrafast InGaAs/InP Avalanche photodetectors

International Conference on Microwaves, Radar & Wireless Communications, (MIKON 2006). pp. 173 - 176, 22-24 May, (2006).

J. Matukas | V. Palenskis | S. Pralgauskaite | A. Vizbaras

Photosensitivity and noise of ultrafast InGaAs/InP avalanche photodiodes

Lithuanian J. Phys., 46, 475-482, (2006)

PLD-prepared cadmium sensors based on chalcogenide glasses – ISFET, LAPS and µISE semiconductor structures

Sensors and Actuators B 118, 149 (2006)

Probing the subband structure of dual electron wave guides

Phase Transitions 79, 815-825 (2006)

S. F. Fischer | G. Apetrii | U. Kunze | D. Schuh | G. Abstreiter

Ramsey Fringes in an Electric-Field-Tunable Quantum Dot System

Phys. Rev. Lett. 96, 037402 (2006)

S. Stufler | P. Ester | A. Zrenner | M. Bichler

Recent progress on semiconductor laser research at the WSI

University of Berkeley, California, USA (2006) (invited).

Recording of cell action potentials with AlGaN/GaN field-effect transistors (vol 86, pg 033901, 2005)

APPLIED PHYSICS LETTERS 89 1 019901 (2006)

Sampled grating tunable twin-guide laser diodes with wide tuning range (?40nm) and large output power (?10mW)

physica status solidi (c) 3 (2006) 403-406.

Semiconductor Nanocrystals Photosensitize C60 Crystals

Nano Letters 6 7 1559-1563 (2006)

Silicon-on-insulator based thin film resistors for quantitative biosensing applications

physica status solidi (a), 203 (14), 3417-3423 (2006)

P. A. Neff | B. Wunderlich | S. Q. Lud | A. R. Bausch

Silicon-on-Insulator Microfluidic device with monolithic sensor integration for µ TAS applications

IEEE-JMEMS 15, 308-313 (2006)

S. Sharma | K. Buchholz | U. Rant | M. Tornow | G. Abstreiter

Single-mode and wavelength-tunable long wavelength VCSELs

University of California, Santa Barbara, USA (2006) (invited).

Slow and fast light using master-modulated injection-locked VCSELs

Conference on Lasers and Electro-Optics (CLEO), Long Beach, USA (2006) Paper-CWG 5.

X. Zhao | Y. Zhou | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Small signal equivalent circuit model of buried tunnel junction VCSEL chips

Chinese Journal of Semiconductors 27 (2006) 2015-2018.

Spatial imaging and mechanical control of spin coherence in strained GaAs epilayers

Applied Physics Letters 88, 241918 (2006)

H. Knotz | A. Holleitner | J. Stephens | R. Myers | D. Awschalom

Spin Relaxation: from 2D to 1D

Book chapter, Springer Lectures Note (2006).

Spin-glass-like behavior of Ge: Mn

PHYSICAL REVIEW B 74 045330 (2006)

Stopping spins spinning: Slowing of spin relaxation in semiconductor quantum dots

Walter Schottky Preisträger Artikel, Physik Journal 6, 8/9, (2006)

J. J. Finley

Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix

APPLIED PHYSICS LETTERS 88 11 112506 (2006)

Structural properties of Ge nanocrystals embedded in sapphire

JOURNAL OF APPLIED PHYSICS 100 114317 (2006)

Suppression of spin relaxation in submicron InGaAs wires

Physical Review Letters 97, 036805 (2006)

A. Holleitner | V. Sih | R. C. Myers | A. C. Gossard | D. D. Awschalom

Synthetic nanocrystalline diamond as a third-generation biosensor support

LANGMUIR 22 13 5837-5842 (2006)

The 3D nanometer device project nextnano: Concepts, methods, results

J. Comput. Electron. 5, 285 (2006)

The role of surface-charging during the co-adsorption of mercaptohexanol to DNA-layers on gold: direct observation of desorption and layer re-orientation

Langmuir 22, 5560-5562 (2006)

Thermal radiation of surface waves in the vicinity of a copper plate's edge

Condensed Media and Interphase Boundaries 8, 2, 131-136 (2006)

D. A. Minakov | V. N. Selivanov | V. B. Zon | A. N. Latyshev | O. V. Ovchinnikov

Tunnel junctions for GaSb-based devices

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Duisburg, Germany (2006).

C. Lauer | O. Dier | M. C. Amann

Tunnel-coupled one-dimensional electron systems with large subband separations

Phys. Rev. B 74, 115324 (2006)

S. F. Fischer | G. Apetrii | U. Kunze | D. Schuh | G. Abstreiter

Tunneling spectroscopy of Landau band gaps at a quantum Hall line junction with adjustable Fermi level

Phys. Rev. B 73, 205305 (2006)

M. Habl | M. Reinwald | W. Wegscheider | M. Bichler | G. Abstreiter

Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs

Nanotechnology 17, 5754 (2006)

Uncooled high speed (> 11 GHz) 1.55 µm VCSELs for CWDM access networks

Europ. Conf. Optical Commun. (ECOC), Cannes, France (2006) 59-60.

W. Hofmann | G. Böhm | M. Ortsiefer | E. Wong | M. C. Amann

Uncooled, optical injection-locked 1.55 µm VCSELs for upstream transmitters in WDM-PONs

Optical Fiber Conference (OFC), Anaheim, USA (2006) PDP 50 pp. 1-3.

E. Wong | X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys

PHYSICA B-CONDENSED MATTER 376 568-570 (2006)

Vertical quantum wire realized with double cleaved-edge overgrowth

Appl. Phys. Lett. 89, 032102 (2006)

S. F. Roth | H. J. Krenner | D. Schuh | M. Bichler | M. Grayson

Very long wavelength VCSELs for sensing applications

CONSRT Nano- Optoelectronic Workshop, Berkeley, USA (2006) (invited).

Wave-function mixing in strongly confined tunnel-coupled quantum point contacts

Physica E 34, 526-529 (2006)

G. Apetrii | S. F. Fischer | U. Kunze | D. Schuh | G. Abstreiter

2.5 mW single-mode operation of 1.55 µm buried tunnel junction VCSELs

IEEE Photonics Technology Letters 17 (2005) 1596-1598.

30nm digitally tunable laser with a 0.57nm frequency grid

Conference on Lasers and Electro-Optic (CLEO) /Europe, Munich, Germany (2005) CP1-7-THU.

T. Jacke | R. Todt | R. Meyer | M. C. Amann

32nm digitally tunable laser diode with a 0.58nm wavelength grid using a vertically integrated Mach-Zehnder interferometer

Applied Physics Letters 87 (2005) 201113.

T. Jacke | R. Todt | R. Meyer | M. C. Amann

Above room temperature operation of injectorless quantum cascade lasers

Indium Phosphide and Related Materials Conference (IPRM), Glasgow, Scotland, UK (2005).

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Aluminium arsenide cleaved-edge overgrown quantum wires

Appl. Phys. Lett. 87, 052101 (2005)

Aluminum arsenide cleaved-edge overgrown quantum wires

Appl. Phys. Lett. 87, 052101 (2005)

Anomalous Stark shifts in single vertically coupled pairs of InGaAs quantum dots

Physica E 26, 302-307 (2005)

Band diagram of the AlF3-SiO2-Si system

J. Appl. Phys. 97, 093707 (2005)

D. Koenig | R. Scholz | D. R. T. Zahn | G. Ebest

BioMOCA - a Boltzmann transport Monte Carlo model for ion channel simulation

Molecular Simulation 31 (2-3), 151-171 (2005)

T. A. V. D. Straaten | G. Kathawala | A. Trellakis | R. S. Eisenberg | U. Ravaioli

Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for InxGa1-xAs and InxGa1-xAs1-yNy quantum wells

Phys. Rev. B 72, 155324 (2005)

Bulk inversion asymmetry spin-splitting in L-valley GaSb quantum wells

in: Proc. of the 27th Int. Conf. on the Physics of Semiconductors, Flagstaff, 25 - 30 July 2004, ed. by J. Menendez and C.G. Van de Walle; AIP Conf. Proc. 772, 1307 (2005)

J. M. Jancu | R. Scholz | G. C. L. Rocca | E. A. D. Silva | P. Voisin

Buried heterostructure laser with vertically-integrated Mach-Zehnder interferometer for Vernier-effect-based wide wavelength tuning

IEE Proceedings of Optoelectronics 152 (2005) 72-76.

T. Jacke | R. Todt | M. C. Amann

Calculation of carrier transport through quantum dot molecules

AIP Conf. Proc. 722, 799 (2005)

T. Zibold | M. Sabathil | D. Mamluy | P. Vogl

Calculation of the linewidth broadening in vertical-cavity surface-emitting lasers due to temperature fluctuations

Applied Physics Letters 86 (2005) 191108.

C. Lauer | M. C. Amann

Chemical functionalization of GaN and AlN surfaces

APPLIED PHYSICS LETTERS 87 26 263901 (2005)

Combined Raman spectroscopic and electrical characterization of the conductive channel in pentacene based OFETs

Proc. of SPIE 5940, 59400F (2005)

Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry

Proc. of SPIE 5940, 59400I (2005)

Contact block reduction method for ballistic transport and carrier densities of open nanostructures

Phys. Rev. B 71, 245321 (2005)

D. Mamaluy | D. Vasileska | M. Sabathil | T. Zibold | P. Vogl

Controlled positioning of self-assembled InAs quantum dots on (110) GaAs

Physica E 26, 72-76 (2005)

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90º

Appl. Phys. Lett. 86, 032101 (2005)

M. Grayson | D. Schuh | M. Huber | M. Bichler | G. Abstreiter

Coupled cavity phenomena within MEMS-tunable long-wavelength VCSELs

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA (2005) CThA4.

Cyclotron spin-flip mode as the lowest-energy excitation of unpolarized integer quantum Hall states

Phys. Rev. B 72, 073304 (2005)

Demonstration of Vernier effect tuning in tunable twin-guide laser diodes

IEE Proceedings of Optoelectronics 152 (2005) 66-71.

R. Todt | T. Jacke | R. Laroy | G. Morthier | M. C. Amann

Deposition of microcrystalline silicon prepared by hot-wire chemical-vapor deposition: The influence of the deposition parameters on the material properties and solar cell performance

JOURNAL OF APPLIED PHYSICS 98 2 024905 (2005)

S. Klein | F. Finger | R. Carius | M. Stutzmann

Depth profile of strain and composition in Si/Ge dot multilayers by microscopic phonon Raman spectroscopy

Journal of Appl. Phys. 98, 113517 (2005)

P. H. Tan | D. Bougeard | G. Abstreiter | K. Brunner

Design and optimization of vertical CEO-T-FETs with atomically precise ultrashort gates by simulation with quantum transport models

in: proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 1501-1502 (2005)

J. Höntschel | W. Klix | R. Stenzel | F. Ertl | G. Abstreiter

Diffusion of dopants in highly (1e20/cm3) n- and p-doped GaSb-based materials

Journal of Vacuum Science and Technology B 23 (2005) 349-353.

O. Dier | M. Grau | C. Lauer | C. Lin | M. C. Amann

Direct Observation of Controlled Coupling in an Individual Quantum Dot Molecule

Phys. Rev. Lett. 94, 057402 (2005)

Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer

Virtual Journal of Nanoscale Science Technology 12 (1) (2005) &
Phys. Rev. B 71, 245316 (2005)

Embedded atom simulations of titanium systems with grain boundaries

Phys. Rev. B 71, 205409 (2005)

T. Hammerschmidt | A. Kersch | P. Vogl

Field Effect of Screened Charges: Electrical Detection of Peptides and Proteins by a Thin-Film Resistor

ChemPhysChem 7(2), 379-384, 2005

S. Q. Lud | M. G. Nikolaides | I. Haase | M. Fischer | A. R. Bausch

Field-effect induced mid-infrared intersubband electroluminescence of quantum wire cascade structures

in: proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 443-444 (2005)

Four-point measurements of n- and p-type two-dimensional systems fabricated with cleaved-edge overgrowth

Appl. Phys. Lett. 87, 212113 (2005)

High output power tunable twin-guide laser diodes with improved lateral current injection structure

Electronics Letters 41 (2005) 190-191.

R. Todt | T. Jacke | R. Meyer | M. C. Amann

High performance injectorless quantum-cascade lasers

Electronics Letters 41 (2005) 529-531.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

High single mode output power from long-wavelength VCSELs using curved micro-mirrors for mode control

IEE Electronics Letters 41 (2005) 43-44.

Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy

APPLIED PHYSICS LETTERS 86 19 192108 (2005)

High-purity, isotopically enriched bulk silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 G448 (2005)

In honour of Professor Johannes Heydenreich - Preface

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 202 12 2247-2248 (2005)

W. Neumann | M. Stutzmann | S. Hildebrandt

Influence of facet reflections on monolithic widely tunable laser diodes

IEEE Photonics Technology Letters 17 (2005) 2520-2522.

R. Todt | M. C. Amann

Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

APPLIED PHYSICS LETTERS 86 8 083507 (2005)

O. Weidemann | E. Monroy | E. Hahn | M. Stutzmann | M. Eickhoff

Influence of voltmeter input impedance on quantum Hall measurements

J. Appl. Phys. 98, 013710 (2005)

F. Fischer | M. Grayson

Injectorless quantum-cascade lasers

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (2005).

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Interface formation of Mg with DiMePTCDI studied by Raman spectroscopy

phys. stat. sol. (c) 2, 4048-52 (2005)

B. A. Paez | G. Salvan | R. Scholz | D. R. T. Zahn

Investigation of cavity modes and direct observation of Purcell enhancement in 2D photonic crystal defect microcavities

Physica E 26, 351-355 (2005)

Investigation of molecular dimers in alpha-PTCDA with ab initio methods: Binding energies, gas-to-crystal shift, self-trapped excitons

Phys. Rev. B 72, 245208 (2005)

R. Scholz | A. Y. Kobitski | D. R. T. Zahn | M. Schreiber

Laser hygrometer using a vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 1.84µm

IEEE Transactions of Instrumentation and Measurement 54 (2005) 1214-1218.

Long-wavelength MEMS tunable VCSEL with high sidemode suppression

IEEE/LEOS International Conference on Optical MEMS and Their Applications (MOEMS), Oulu, Finland (2005).

Long-wavelength tunable vertical-cavity surface-emitting lasers and the influence of coupled cavities

Opt. Express 13 (2005) 8008-8014.

Low-threshold injectorless quantum cascade lasers emitting at ?? 7.9 mm

International Conference on Intersubband Transitions in Quantum Wells (ITQW), Falmouth, Cape Cod, USA (2005).

A. Friedrich | G. Böhm | M. C. Amann

Magnetoresistance anomalies in (Ga,Mn)As epilayers with perpendicular magnetic anisotropy

Physical Review B 71, 241307 (2005)

Magnetotransport spectroscopy of mode coupling in electron wave guides

in: proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 923-924 (2005)

G. Apetrii | S. F. Fischer | U. Kunze | D. Schuh | G. Abstreiter

Magnetotransport spectroscopy of spatially coincident coupled electron waveguides

Phys. Rev. B 71, 195330 (2005)

S. F. Fischer | G. Apetrii | U. Kunze | D. Schuh | G. Abstreiter

Manipulating a domain wall in (Ga,Mn)As

Journal Of Applied Physics 97, 10D314 (2005)

A. Holleitner | H. Knotz | R. Myers | A. Gossard | D. Awschalom

Manipulation of the spontaneous emission dynamics of quantum dots in two-dimensional photonic crystals

Phys. Rev. B 71, 241304 (R) (2005)

Measuring carrier density in parallel conduction layers of quantum Hall systems

J. Appl. Phys. 98, 013709 (2005)

M. Grayson | F. Fischer

Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2

APPLIED PHYSICS LETTERS 86 063107 (2005)

Microscopic models for self-trapped excitons in alpha-PTCDA

J. Lumin. 112, 303-7 (2005)

M. Schreiber | R. Scholz

Mn-rich clusters in GaN: Hexagonal or cubic symmetry?

APPLIED PHYSICS LETTERS 86 13 131927 (2005)

Modeling of Purely Strain-Induced CEO GaAs/In(_.16)Al(_.84)As Quantum Wires

Proc. 5^th Int. Conf. Numerical Simulation of Optoelectronic Devices (NUSOD'05), Berlin, Germany, 1 (2005)

S. Birner | R. Schuster | M. Povolotskyi | P. Vogl

Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers

Proceedings of 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 547 (2005)

Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures

Appl. Phys. Lett. 86, 192106 (2005)

Modulation bandwidths of widely tunable SG-TTG laser diodes

European Semiconductor Laser Workshop (ESLW), Glasgow, United Kingdom (2005).

Nanometre spaced electrodes on a cleaved AlGaAs surface

Nanotechnology 16, 1182 (2005)

Negative differential conductance in cleaved edge overgrown surface superlattices

in: proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 900-901 (2005)

Optical and electrical properties of polycrystalline silicon-germanium thin films prepared by aluminum-induced layer exchange

APPLIED PHYSICS LETTERS 86 6 062115 (2005)

M. Gjukic | R. Lechner | M. Buschbeck | M. Stutzmann

Patterned surfaces for in vitro hydroxyapatite growth

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7 1 469-472 (2005)

L. Pramatarova | E. Pecheva | R. Presker | M. Stutzmann | M. Hanzlik

pH sensors based on hydrogenated diamond surfaces

APPLIED PHYSICS LETTERS 86 7 073504 (2005)

Physics and growth of Si-doped two-dimensional high mobility hole gases on (110) oriented GaAs

in: proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 443-444 (2005)

F. Fischer | M. Grayson | D. Schuh | M. Bichler | G. Abstreiter

Prediction of entanglement detection by I-V characteristics

Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago,USA, July 25-19, 2005, pp. 15-18, Springer Proceedings in Physics, vol. 110.

T. Zibold | P. Vogl | A. Bertoni

Progress towards single spin optoelectronics using quantum dot nanostructures

sol. stat. comm. 135, 591-601 (2005)

D. Heiss | M. Kroutvar | J. J. Finley | G. Abstreiter

Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement

Proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 898-899 (2005)

Quantum Dot Circuits for Quantum Computation

In Quantum Information Processing, edited by Thomas Beth and Gerd Leuchs
WILEY-VCH Verlag, ISBN: 3527405410 (2005).

R. H. Blick | A. K. Hüttel | A. Holleitner | L. Pescini | H. Lorenz

Quantum optical properties of a single InxGa1-xAs-GaAs quantum dot two-level system

Phys. Rev. B 72, 121301 (R) 2005

S. Stufler | P. Ester | A. Zrenner | M. Bichler

Quantum-cascade lasers without injector regions operating above room temperature

Applied Physics Letters 86 (2005) 161114.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Raman scattering of folded acoustic phonons in self – assembled Si/Ge dot superlattices

Chinese Journal of light scattering 17, 312-314 (2005)

P. H. Tan | D. Bougeard | G. Abstreiter | K. Brunner

Recent advances in exciton-based quantum information processing in quantum dot nanostructures

New Journal of Physics 7, 184 (2005)

Recent advances in exciton-based quantum information processing in quantum dot nanostructures

New Journal of Physics 7, 184 (2005)

Recording of cell action potentials with AlGaN/GaN field-effect transistors

APPLIED PHYSICS LETTERS 86 3 033901 (2005)

Sampled grating tunable twin-guide laser diodes with over 40nm electronic tuning range

IEEE Photonics Technology Letters 17 (2005) 2514-2516.

Self-consistent quantum transport theory of carrier capture in heterostructures

Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, USA, July 25-19, 2005, Springer Proceedings in Physics, vol. 110, pp. 369-372

T. Kubis | A. Trellakis | P. Vogl

Silicon-on-insulator based thin-film resistor for chemical and biological sensor applications

Chem. Phys. Chem. 4, 1104-1106 (2005)

Spectrum of one-dimensional plasmons in a single stripe of two-dimensional electrons

Phys. Rev. B 72, 161317 (2005)

Spin effects in a quantum ring

Physica E 26, 225-230 (2005)

T. Ihn | A. Fuhrer | K. Ensslin | W. Wegscheider | M. Bichler

Spin-preserving ultrafast carrier capture and relaxation in InGaAs quantum dots

Appl. Phys. Lett. 87, 153113 (2005)

Stable, free-standing Ge nanocrystals

JOURNAL OF APPLIED PHYSICS 97 124316 (2005)

State-of-the-art performance of widely tunable twin-guide laser diodes

European Semiconductor Laser Workshop (ESLW), Glasgow, United Kingdom (2005).

Structural and morphological properties of N,N'-3,4,9,10-perylenetetracarboxylic diimide films on passivated GaAs(100) substrates

J. Crystal Growth 275, e1155-62 (2005)

Structure of a single sharp quantum Hall edge probed by momemtum-resolved tunneling

Phys. Rev. Lett. 94, 016805 (2005)

Temperature-dependent transport properties of hydrogen-induced diamond surface conductive channels

PHYSICAL REVIEW B 71 24 245310 (2005)

J. A. Garrido | T. Heimbeck | M. Stutzmann

Theoretical study of electrolyte gate AlGaN/GaN field effect transistors

J. Appl. Phys. 97, 033703, (2005)

M. Bayer | C. Uhl | P. Vogl

Thermally widely tunable laser diodes with distributed feedback

Applied Physics Letters 87 (2005) 021103.

R. Todt | T. Jacke | R. Meyer | M. C. Amann

Thermally widely tunable laser diodes with distributed feedback

Europ. Conf. Optical Commun., Glasgow, United Kingdom (2005) We4.P.77.

R. Todt | T. Jacke | R. Meyer | M. C. Amann

Towards a new quantum wire structure realizable by double cleaved-edge overgrowth: Characterizing the transfer potential

in: proc. of 27th International Conference on the Physics of Semiconductors, eds: J. Menéndez and Chris G. Van de Walle, AIP Conference Proc. 772, 915-916 (2005)

S. F. Roth | M. Grayson | M. Bichler | D. Schuh | G. Abstreiter

Tunable laser diodes and related optical sources

John Wiley & Sons, Hoboken, N.J., USA (2005).

J. Buus | M. C. Amann | D. J. Blumenthal

Tunable twin-guide (TTG) distributed feedback (DFB) laser diodes with over 9nm continuous electro-optic tuning range

Electronics Letters 41 (2005) 1063-1065.

R. Todt | T. Jacke | R. Meyer | J. Adler | M. C. Amann

VCSELs emerge as low-cost alternatives to edge-emitters

Laser Focus World 41 (2005) 127-131.

C. Lauer | M. Maute | W. Hofmann | M. C. Amann

Wide wavelength tuning of sampled-grating tunable twin-guide laser diodes

Photonics West, San Jose, USA (2005).

Widely tunable Mach-Zehnder interferometer laser with improved tuning efficiency

Electronics Letters 41 (2005) 45-46.

T. Jacke | R. Todt | M. Rahim | M. C. Amann

Widely tunable twin-guide laser diodes at 1.55µm

OptoElectronics and Communications Conference (OECC), Seoul, Korea (2005) PDP 07.

Widely tunable twin-guide laser diodes with over 40nm-tuning range

International Symposium on Compound Semiconductors (ISCS), Rust, Germany (2005) Tu3.6.

80°C continuous-wave operation of 2.01µm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters 16 (2004) 2209-2211.

A new concept for micro-mechanically tunable long wavelength VCSELs

Conference on Lasers and Electro-Optics (CLEO), San Francisco, USA (2004).

Activated transport in the separate layers that form the vT = 1 excition condensate

Phys. Rev. Lett. 93, 266805 (2004)

Advanced study of various characteristics found in RHEED patterns during the growth of InAs quantum dots on GaAs (001) substrate by molecular beam epitaxy

Appl. Surface Science 228, 306-312 (2004)

J. W. Lee | D. Schuh | M. Bichler | G. Abstreiter

Advances in the theory of electronic structures of semiconductors

phys. stat. sol. (c) 1, 2003 (2004)

J. A. Majewski | S. Birner | A. Trellakis | M. Sabathil | P. Vogl

AlGaAsSb/AlGaInAs type-II superlattices for tuning regions in tunable laser diodes

Photonics Europe, Strasbourg, France (2004) 163-173.

G. Rösel | T. Jacke | M. Grau | R. Meyer | M. C. Amann

Aluminum-induced crystallization of amorphous silicon-germanium thin films

APPLIED PHYSICS LETTERS 85 11 2134-2136 (2004)

M. Gjukic | M. Buschbeck | R. Lechner | M. Stutzmann

Anomalous spin dephasing in (110) GaAs quantum wells: Anisotropy and intersubband effects

Phys. Rev. Lett. 93, 147405 (2004)

Anomalous-filling-factor-dependent nuclear-spin polarization in a 2D electron system

Phys. Rev. Lett. 92, 086802 (2004)

Atomically precise modulated two-dimensional electron gas exhibiting stable negative differential resistance

Physica E 22, 733-736 (2004)

Capture and release of photonic images in a quantum well

Appl. Phys. Lett. 85, 5830-5832 (2004)

Charged excitons in the quantum hall regime

Acta Physica Polonica A 106, 341-353 (2004)

Chirp and linewidth enhancement factor of 1.55µm VCSEL with buried tunnel junction

Electronics Letters 40 (2004) 1266-1267.

Compact expression for the angular dependence of tight-binding Hamiltonian matrix elements

Phys. Rev. B 69, 233101 (2004)

A. V. Podolskiy | P. Vogl | Download includes Mathematica+Maple Code

Contact block reduction method and its application to a 10 nm MOSFET device

Semicond. Sci. Technol. 19, S118 (2004)

D. Mamaluy | A. Mannargudi | D. Vasileska | M. Sabathil | P. Vogl

Continuously tunable long-wavelength MEMS-VCSEL with over 40 nm tuning range

IEEE Photonics Technology Letters 16 (2004) 2212-2214.

Coulomb drag as a probe of the nature of compressible states in a magnetic field

Phys. Rev. Lett. 92, 246801 (2004)

Design and fabrication of widely tunable twin-guide laser diodes

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (2004).

Direct determination of strain and composition in InGaAs nano-islands using anomalous grazing incidence x-ray diffraction

Superlattices and Microstructures 36, 1-3 (2004)

Direct observation of Mn clusters in GaN by X-ray scanning microscopy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 6A L695-L697 (2004)

G. Martinez-Criado | A. Somogyi | M. Hermann | M. Eickhoff | M. Stutzmann

Directional effects on bound quantum states for trench oxide quantum wires on (100)-silicon

Solid-State Electronics 48, 367 (2004)

A. Trellakis | U. Ravaioli

Doping and its efficiency in a-SiOx : H

PHYSICAL REVIEW B 69 11 115206 (2004)

Doping-level-dependent optical properties of GaN : Mn

APPLIED PHYSICS LETTERS 84 22 4514-4516 (2004)

Dynamic electrical switching of DNA layers on a metal surface

Nano Lett. 4, 2441-2445 (2004)

Dynamics of optically stored charges in InGaAs quantum dots

Physica E 21, 886-891 (2004)

Electric field control of exciton states in quantum dot molecules

Physica E 21, 171-174 (2004)

Electron injection-induced effects in Mn-doped GaN

JOURNAL OF APPLIED PHYSICS 96 6 3556-3558 (2004)

Electronic and optical properties of [N11] grown nanostructures

phys. stat. sol. (c) 1 (6), 1511 (2004)

M. Povolotskyi | A. D. Carlo | S. Birner

Electronic correlations at the edge of a quantum Hall liquid

in: Proc. of the Int. School of Phys. “Enrico Fermi”
Course CLVII, G. F. Giuliani and G. Vignale (Eds.)
IOS Press, Amsterdam, 515-526 (2004)

M. Grayson

Electronic transport through a quantum dot network

Phys. Rev. B 70, 205306 (2004)

A. Dorn | T. Ihn | K. Ensslin | W. Wegscheider | M. Bichler

Enhanced carrier lifetime for the tuning region in tunable laser diodes based on type-II quantum wells

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China (2004).

T. Jacke | G. Rösel | M. Grau | R. Meyer | M. C. Amann

Enhanced tuning efficiency in tunable laser diodes using type-II superlattices

IEEE Photonics Technology Letters 16 (2004) 738-740.

G. Rösel | T. Jacke | M. Grau | R. Meyer | M. C. Amann

Experimental demonstration of a sharp quantum Hall edge

Physica E 25, 212-218 (2004)

Fabrication of double quantum dots by combining afm and e-beam lithography

Physica E 21, 483-486 (2004)

Frenkel Exciton Model of Electron Energy Loss Spectroscopy in alpha-PTCDA

J. Lumin. 110, 284-9 (2004)

I. Vragovic | R. Scholz | M. Schreiber

GaInAsSb/AlGaAsSb-lasers in the wavelength range between 2.73 µm and 2.93 µm

Physica E 20 (2004) 507-510.

M. Grau | C. Lin | O. Dier | M. C. Amann

Heterostructures overgrown on GaAs corner substrates

Physica E 23, 293-297 (2004)

D. Schuh | M. Grayson | M. Bichler | G. Abstreiter

High quality heteroepitaxial AlN films on diamond

JOURNAL OF APPLIED PHYSICS 96 1 895-902 (2004)

High-speed vertical-cavity laser diodes at 1.55µm

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China (2004) 5-6.

High-temperature (T=490K) operation of 5.8µm quantum cascade lasers with InP/GaInAs waveguides

Electronics Letters 40 (2004) 1416-1417.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Hole spin-relaxation in quantum wells from saturation of inter-subband absorption

Physica E 22, 418-421 (2004)

How to probe a fractionally charged quasihole?

Physica E 22, 131-134 (2004)

Hydrogen control of ferromagnetism in a dilute magnetic semiconductor

PHYSICAL REVIEW LETTERS 92 22 227202 (2004)

Hydrogenated diamond surfaces studied by atomic and Kelvin force microscopy

DIAMOND AND RELATED MATERIALS 13 4-8 740-745 (2004)

B. Rezek | C. E. Nebel | M. Stutzmann

Influence of crystal defects on the piezoresistive properties of 3C-SiC

JOURNAL OF APPLIED PHYSICS 96 5 2878-2888 (2004)

M. Eickhoff | M. Stutzmann

Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

JOURNAL OF APPLIED PHYSICS 95 12 7908-7917 (2004)

Influence of exciton transfer on the optical cycle of alpha-PTCDA

J. Lumin. 108, 121-6 (2004)

InP-based long-wavelength vertical-cavity surface-emitting lasers with buried tunnel junction

physica status solidi (c) 1 (2004) 2183-2209.

Interaction between metals and organic semiconductors studied by Raman spectroscopy

J. Vac. Sci. Technol. A 22, 1482-7 (2004)

D. R. T. Zahn | G. Salvan | B. A. Paez | R. Scholz

Interface properties of metal/cytosine/Si(111):H heterostructures studied by means of SERS and DFT

Appl. Surf. Sci. 235, 73-9 (2004)

Inversion asymmetry effects in L-valley quantum wells

in: Proc. of Fourth IEEE Conference on Nanotechnology, M?nchen, 16 - 19 August 2004, ed. by A. Di Carlo and W. Porod, TU-P43 (2004)

J. M. Jancu | R. Scholz | G. C. L. Rocca | E. A. D. Silva | P. Voisin

Invited papers presented at the 8th Conference on Optics of Excitons in Confined Systems (OECS-8) - Lecce, Italy, 15-17 September 2003 - Editorial note

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 3 543-543 (2004)

M. Stutzmann | S. Hildebrandt

Invited papers presented at the 8th Conference on Optics of Excitons in Confined Systems (OECS-8) - Lecce, Italy, 15-17 September 2003 - Editorial note

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 3 614-614 (2004)

M. Stutzmann | S. Hildebrandt

Invited papers presented at the 8th Conference on Optics of Excitons in Confined Systems (OECS-8) - Lecce, Italy, 15-17 September 2003 - Editorial note

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 3 615-615 (2004)

M. Stutzmann | S. Hildebrandt

Jose Roberto Leite (1942-2004) - Obituary

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 241 12 2649-2650 (2004)

A. Fazzio | S. Canuto | K. Lischka | M. Stutzmann

Kondo effect in a many-electron quantum ring

Phys. Rev. Lett. 93, 176803 (2004)

A. Fuhrer | T. Ihn | K. Ensslin | W. Wegscheider | M. Bichler

Light-induced modification of a-SiOx : H. I: Metastability

JOURNAL OF APPLIED PHYSICS 95 8 4046-4059 (2004)

Light-induced modification of a-SiOx II: Laser crystallization

JOURNAL OF APPLIED PHYSICS 95 8 4060-4068 (2004)

Liquid phase sensors based on chemically functionalized GaAs/AlGaAs heterostructures

Physica E 21, 1111-1115 (2004)

Localization of fractionally charged quasi-particles

Science 305, 980-983 (2004)

Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition

Physica E 21, 779-782 (2004)

Long wavelength VCSEL for optical access networks

International Plastic Optical Fibres Conference (POF), Nürnberg, Germany (2004) 19-26.

Long-range ordered self-assembled InAs quantum dots epitaxially grown on (110) GaAs

Appl. Phys. Lett. 85, 4750-4752 (2004)

Long-range ordered self-assembled InAs quantum dots on (110) GaAs grown with Molecular Beam Epitaxy

Proceeding of 4^th IEEE Conference on Nanotechnology, 189-191 (2004)

Long-wavelength InP-based VCSELs with buried tunnel junctions: properties and applications

Photonics West, San Jose, USA (2004) 1-15.

Long-wavelength VCSELs

International Conference on Indium Phosphide and Related Materials (IPRM), Kagoshima, Japan (2004) 695-699 (invited).

M. Maute | M. C. Amann

Low threshold room-temperature continuous-wave operation of 2.24-3.04 µm GaInAsSb/AlGaAsSb quantum-well lasers

Applied Physics Letters 84 (2004) 5088-5090.

C. Lin | M. Grau | O. Dier | M. C. Amann

Magnetic-field-dependent transmission phase of a double-dot system in a quantum ring

Phys. Rev. Lett. 93, 066802 (2004)

Metal deposition onto biomolecular layers on silicon surfaces: An interface formation study using Raman spectroscopy

Appl. Surf. Sci. 234, 113-9 (2004)

Micro-mechanically and widely tunable long-wavelength VCSELs

IEEE International Semiconductor Laser Conference, Matsue-shi, Japan (2004) 119-120.

Micro-mechanically tunable long wavelength VCSEL with buried tunnel junction

Electronics Letters 40 (2004) 430-431.

Micro-mechanically tunable long-wavelength VCSELs

IEEE Laser Workshop, San Francisco, USA (2004).

Mid infrared emission of quantum wire cascade structures

Physica E 21, 223-229 (2004)

Morphology and optical properties of InAs(N) quantum dots

Journ. of Appl. Phys. 96, 2832-2840 (2004)

O. Schumann | L. Geelhaar | H. Riechert | H. Cerva | G. Abstreiter

New anisotropic behaviour of quantum Hall resistance in (1 1 0) GaAs heterostructures at mK temperatures and fractional filling factors

Physica E 22, 108-110 (2004)

F. Fischer | E. Schuberth | D. Schuh | M. Bichler | G. Abstreiter

New widely tunable edge-emitting laser diodes at 1.55µm developed in the European IST-project NEWTON

Asia-Pacific Optical Communications (APOC), Beijing, China (2004).

NMR study of the electron spin polarization in the fractional quantum Hall effect of a single quantum well: Spectroscopic evidence for domain formation

Phys. Rev. B 70, 075318 (2004)

Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers

Semicond. Sci. Technol. 19, S342-S344 (2004)

Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces

Semicond. Sci. Technol. 19, S351 (2004)

Novel 2-chip-concept for micro-mechanically tunable long-wavelength VCSELs for the 1.55µm wavelength range

Photonics Europe, Strasbourg, France (2004) 240-248.

Nuclear spin relaxation probed by a single quantum dot

Physical Review B 69, 073302 (2004)

Observation of electrostatically released DNA from gold electrodes with controlled threshold voltages

J. Chem. Phys. 120, 5501-5504 (2004)

Optical and structural characteristics of virtually unstrained bulk-like GaN

K. Saarinen, C. Miskys, M. Stutzmann, C. Bundesmann, and M. Schubert
Jpn J. of Appl. Phys. 43, 1264-1268 (2004)

Optical and structural characteristics of virtually unstrained bulk-like GaN

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 43 4A 1264-1268 (2004)

Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth

phys. stat. sol. (c) 1, 2028 (2004)

Optical properties of Mn-doped GaN

M. Gjukic, and M. Stutzmann
in: MRS Symp. Proc. 798 (2004), Y8.5.1-6

Optical Properties of Planar Metallic-Dielectric Photonic Crystals

Photonic Crystals: Advances in Design, Fabrication, and Characterization Wiley-VCH Verlag, ISBN: 3-527-40432-5 (2004).

Optically programmable electron spin memory using semiconductor quantum dots

Nature 432, 81-84 (2004)

Oxidation lift-off method for layer transfer of GaAs-AlAs-based structures

Applied Physics Letters 85 (2004) 151-153.

S. Oktyabrsky | A. Katsnelson | V. Tokranov | R. Todt | M. Yakimov

Paramagnetic defects of silicon nanowires

APPLIED PHYSICS LETTERS 85 6 943-945 (2004)

A. Baumer | M. Stutzmann | M. S. Brandt | F. C. K. Au | S. T. Lee

Passivation of Mn acceptors in GaMnAs

APPLIED PHYSICS LETTERS 84 13 2277-2279 (2004)

Photoluminescence of one-dimensional electron gases in cleaved-edge overgrowth quantum wires

phys. stat. sol. (b) 241, No. 5, 1041-1045 (2004)

Photoreflectance studies of (A1)Ga- and N-face AlGaN/GaN heterostructures

THIN SOLID FILMS 450 1 155-158 (2004)

Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC

JOURNAL OF APPLIED PHYSICS 96 5 2872-2877 (2004)

M. Eickhoff | M. Moller | G. Kroetz | M. Stutzmann

Pinning a domain wall in (Ga,Mn)As with focused ion beam lithography

Applied Physics Letters 85, 5622 (2004)

A. Holleitner | H. Knotz | R. Myers | A. Gossard | D. Awschalom

Power broadening of the exciton linewidth in a single InGaAs/GaAs quantum dot

Appl. Phys. Lett. 85, 4202-4204 (2004)

S. Stufler | P. Ester | A. Zrenner | M. Bichler

Prediction of a realistic quantum logic gate using the contact block reduction method

Semicond. Sci. Technol. 19, S137 (2004)

M. Sabathil | D. Mamaluy | P. Vogl

Probing the electrostatics of integer quantum hall edges with momentum-resolved tunnel spectroscopy

Physica E 22, 164-167 (2004)

Proceedings of the Twentieth International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology - Campos do Jordao, Sao Paolo, Brazil August 25-29, 2003 - Foreword

JOURNAL OF NON-CRYSTALLINE SOLIDS 338 VII-VII (2004)

I. Chambouleyron | F. Alvarez | M. Stutzmann | P. C. Taylor | F. C. Marques

Protein-modified nanocrystalline diamond thin films for biosensor applications

NATURE MATERIALS 3, 736-742 (2004)

Pseudospin Kondo correlations versus hybridized molecular states in double quantum dots

Physical Review B 70, 075204 (2004)

A. Holleitner | A. Chudnovskiy | D. Pfannkuche | K. Eberl | R. Blick

Quantized transport in ballistic rectifiers: sign reversal and step-like output

Physica E 21, 916-920 (2004)

S. D. Haan | A. Lorke | J. P. Kotthaus | M. Bichler | W. Wegscheider

Quantum Hall effect in a two-dimensional electron system bent by 90º

Physica E 22, 181-184 (2004)

Quantum rings as phase coherent detectors

Physica E 25, 303-312 (2004)

Quantum-confined Stark shifts of charged exciton complexes in quantum dots

Phys. Rev. B 70, 201308(R) (2004)

Raman monitoring of In and Ag growth on PTCDA and DiMe-PTCDI thin films

Appl. Surf. Sci. 234, 168-72 (2004)

B. A. Paez | G. Salvan | S. Silaghi | R. Scholz | T. U. K. R. T. Zahn

Raman scattering of folded acoustic phonons in self-assembled Si/Ge dot superlattices

Appl. Phys. Lett. 84, 2632-2634 (2004)

P. H. Tan | D. Bougeard | G. Abstreiter | K. Brunner

Rectification in mesoscopic systems with broken symmetry: Quasiclassical ballistic versus classical transport

Phys. Rev. Lett. 92, 056806 (2004)

S. D. Haan | A. Lorke | J. P. Kotthaus | W. Wegscheider | M. Bichler

Redistribution dynamics of optically generated charges in In(Ga)As/GaAs self-assembled quantum dots

Appl. Phys. Lett. 85, 2592-2594 (2004)

Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots

Physica E 21, 312-316 (2004)

Resonant tunneling between parallel 1D quantum wires and adjoining 2D electron reservoirs

Physica E 22, 292-295 (2004)

F. Ertl | S. Roth | D. Schuh | M. Bichler | G. Abstreiter

Room temperature 2.81 µm continuous wave operation of GaInAsSb/AlGaAsSb-laser

IEEE Photonics Technology Letters 16 (2004) 383-385.

M. Grau | C. Lin | M. C. Amann

Room-temperature operation of GaInAsSb-AlGaAsSb quantum well lasers in the 2.2 to 3µm wavelength range

Conference on Lasers and Electro-Optics (CLEO), San Francisco, USA (2004).

M. Grau | C. Lin | O. Dier | M. C. Amann

Selective and non-selective wet-chemical etchants for GaSb-based materials

Semiconductor Science and Technology 19 (2004) 1250-1253.

O. Dier | C. Lin | M. Grau | M. C. Amann

Single-electron effects in a coupled dot-ring system

Phys. Rev. B 69, 241302 (2004)

Single-electron-phonon interaction in a suspended quantum dot phonon cavity

Phys. Rev. Lett. 92, 046804 (2004)

Spin relaxation times of two-dimensional holes from spin sensitive bleaching of intersubband absorption

J. of Appl. Phys. 96, 420-424 (2004)

Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires

Appl. Phys. Lett. 85, 3672-3674 (2004)

Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

Physica E 21, 236-240 (2004)

Structural and interface properties of an AlN diamond ultraviolet light emitting diode

APPLIED PHYSICS LETTERS 85 17 3699-3701 (2004)

Structural properties of oligonucleotide monolayers on gold surfaces probed by fluorescence investigations

Langmuir 20, 10086-10092 (2004)

Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy

JOURNAL OF APPLIED PHYSICS 95 10 5305-5310 (2004)

M. Herrera | A. Cremades | J. Piqueras | M. Stutzmann | O. Ambacher

Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots

Physica E 21, 199-203 (2004)

Technology and design of widely tunable lasers with vertically integrated Mach-Zehnder Interferometer (VMZ) grown by Chemical Beam Epitaxy (CBE)

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (2004).

T. Jacke | R. Todt | G. Rösel | R. Meyer | M. C. Amann

Temperature-induced broadening of the emission lines from a quantum-dot nanostructure

Physica E 24, 272-277 (2004)

Temperature-induced carrier escape processes studied in absorption of individual InxGa1-xAs quantum dots

Phys. Rev. B 69, 155323 (2004)

Tempern von aktiven Zonen aus GaInAsSb/AlGaAsSb MQWs für GaSb-VCSEL

Deutscher MBE-Workshop, Braunschweig, Germany (2004).

The structure and dispersion of a sharp quantum hall edge probed by momentum-resolved tunneling

Adv. in Solid State Phys. 44, 213-225 (2004) (ed. B. Kramer)

Theoretical study of the adsorption of a PTCDA monolayer on S-passivated GaAs(100)

Appl. Surf. Sci. 234, 173-7 (2004)

B. Szuecs | Z. Hajnal | R. Scholz | S. Sanna | T. Frauenheim

Thin polycrystalline SiGe films by aluminium-induced layer exchange

Physica Status Solidi (c) 1, 1131 (2004).

R. Lechner | M. Buschbeck | M. Gjukic | M. Stutzmann

Time and current dependencies of transport at the v=2/3 phase transition in narrow quantum wells

Physica E 22, 138-141 (2004)

Time-resolved photoluminescence in alpha-PTCDA single crystals: Evidence for recombination via Frenkel excitons, charge transfer states, excimers

Organic Electronics 5, 99-105 (2004)

R. Scholz | A. Y. Kobitski | I. Vragovic | H. P. Wagner | D. R. T. Zahn

Transmission phase through two quantum dots embedded in a four-terminal quantum ring

Physica E 22, 530-533 (2004)

Transport in weakly and strongly modulated two-dimensional electron systems realized by cleaved-edge-overgrowth

phys. stat. sol. 1, 2111 (2004)

Tunable InP-based buried heterostructure lasers with vertically integrated Mach-Zehnder interferometer (VMZ)

Photonics Europe, Strasbourg, France (2004) 174-182.

T. Jacke | R. Todt | M. C. Amann

Tunable twin-guide laser diodes for wide wavelength tuning at 1.55µm

Optics East, Philadelphia, USA (2004).

Tuning performance of widely tunable twin-guide laser diodes

Workshop on Compound Semiconductor Devices and Integrated Circuits Europe (WOCSDICE), Smolenice Castle, Slovakia (2004) 99-100.

Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces

IEEE Transactions on Nanotechnology 3, 124 (2004)

M. Povolotskyi | A. D. Carlo | P. Lugli | S. Birner | P. Vogl

Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Applied Physics Letters 85 (2004) 2388-2389.

Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Deutscher MBE-Workshop, Braunschweig, Germany (2004).

Two-dimensional electron gas recombination in undoped AlGaN/GaN heterostructures

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 43 6A 3360-3366 (2004)

G. Martinez-Criado | C. Miskys | U. Karrer | O. Ambacher | M. Stutzmann

Two-dimensional quantum effects and structural optimization of FinFETs with two-dimensional Poisson-Schrödinger solvers

J. Korean Phys. Soc. 45 (5), 1384-1390 (2004)

Two-dimensional quantum-mechanical modeling for strained silicon channels of double-gate MOSFETs

J. Korean Phys. Soc. 45, S909-S913 (2004)

Vacuum ultraviolet spectroscopic ellipsometry investigations of guanine layers on H-passivated Si(111) surfaces

Thin Solid Films 455, 505-508 (2004)

Vertical-mode dependence of coupling between an electron waveguide and reservoirs with two occupied subbands

Physica E 22, 398-401 (2004)

G. Apetrii | S. F. Fischer | U. Kunze | D. Schuh | G. Abstreiter

Very high temperature operation of 5.75 µm quantum-cascade lasers

International Conference on the Physics of Semiconductors (ICPS), Flagstaff, USA (2004) 1567-1568.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Wide wavelength tuning of sampled grating tunable twin-guide laser diodes

Electronics Letters 40 (2004) 1491-1492.

Wide wavelength tuning of sampled-grating tunable twin-guide laser diodes

European Semiconductor Laser Workshop (ESLW), Säröhus, Sweden (2004).

Widely tunable lasers with vertically integrated Mach-Zehnder interferometer

International Conference on Indium Phosphide and Related Materials (IPRM), Kagoshima, Japan (2004) 473-476.

T. Jacke | R. Todt | R. Meyer | M. Maute | M. C. Amann

1.8 µm vertical-cavity surface-emitting laser absorption measurements of HCl, H2O and CH4

Measurement Science and Technology 14 (2003) 472-478.

A low threshold polymer laser based on metallic nanoparticle gratings

Advanced Materials 15, 1726 (2003)

Aharonov-Bohm effect of a quantum ring in the Kondo regime

phys. stat. sol. (b) 238, 331-334 (2003)

AlN/diamond heterojunction diodes

APPLIED PHYSICS LETTERS 82 2 290-292 (2003)

AlN/Diamond np-junctions

DIAMOND AND RELATED MATERIALS 12 10-11 1873-1876 (2003)

AlxGa1-xN - A new material system for biosensors

ADVANCED FUNCTIONAL MATERIALS 13 11 841-846 (2003)

G. Steinhoff | O. Purrucker | M. Tanaka | M. Stutzmann | M. Eickhoff

Anisotropic high-mobility quantum Hall transport: two-dimensional electrons subject to few millikelvins and misoriented substrates

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Carrier dynamics in red-emitting self-organised InAs-AlGaAs quantum dots with indirect barriers

Physica E 17, 109-110 (2003)

Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with

A. F. G. Monte, J. J. Finley, A. D. Ashmore, A. M. Fox, D. J. Mowbray, M. S. Skolnick, and M. Hopkinson
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Chaos and open orbits in hole-antidot arrays with non-isotropic Fermi surface

Europhysics Letters 61, 382-388 (2003)

Charge transfer at the Mn acceptor level in GaN

JOURNAL OF SUPERCONDUCTIVITY 16 1 83-86 (2003)

Circular photogalvanic effect at inter-band excitation in semiconductor quantum wells

sol. stat. com. 128, 283-286 (2003)

Coherent and incoherent properties of single quantum dot photodiodes

Physica E 16, 59-67 (2003)

Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

Appl. Phys. Lett. 83, 1163-1165 (2003)

Combined Electrical and Raman Characterization of C60-Based Organic Field Effect Transistors

Proc. of SPIE 5217, 63-70 (2003)

Continuous wave GaInAsSb/AlGaAsSb type-I double quantum well lasers for 2.96 µm wavelength

Electronics Letters 39 (2003) 1816-1817.

M. Grau | C. Lin | O. Dier | M. C. Amann

Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots

Phys. Rev. B 68, 235301 (2003)

Curved two-dimensional electron gases

Superlattices and Microstructures 33, 347-356 (2003)

A. Lorke | S. Bohm | W. Wegscheider

Cyclotron resonance of composite fermions

J. of Supercond. 16, 777-781 (2003)

I. V. Kukushkin | J. H. Smet | K. V. Klitzing | W. Wegscheider

Cyclotron resonance of composite fermions with two and four flux quanta

Physica E 20, 96-102 (2003)

I. V. Kukushkin | J. H. Smet | K. V. Klitzing | W. Wegscheider

Development of a multiparametric system based on solid-state microsensors for monitoring a nuclear waste repository

Sensors and Actuators B 91, 103 (2003)

DX behaviour of Si donors in AlGaN alloys

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 235 1 13-19 (2003)

M. S. Brandt | R. Zeisel | S. T. B. Gonnenwein | M. W. Bayerl | M. Stutzmann

Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots

Physica E 17, 37-39 (2003)

Efficient computational method for ballistic currents and application to single quantum dots

Journal of Computational Electronics 2, 269 (2003)

M. Sabathil | S. Birner | D. Mamaluy | P.Vogl

Efficient method for the calculation of ballistic quantum transport

J. Appl. Phys. 93, 4628 (2003)

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Electrically pumped room temperature CW-VCSELs with emission wavelength of 2 µm

Electronics Letters 39 (2003) 57-58.

Electrically tunable mid-infrared electroluminescence from graded cascade structures

Appl. Phys. Lett. 83, 3015-3017 (2003)

Electric-field-induced reversible avalanche breakdown in a GaAs microcrystal due to cross band gap impact ionization

Appl. Phys. Lett. 83, 704-706 (2003)

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

phys. stat. sol. (c) 0, 1908-1918 (2003) (review article)

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures - Part A: Polarization

phys. stat. sol. (c) 0, 1878-1907 (2003) (review article)

Excessive counterion condensation on immobilized ssDNA in solutions of high ionic strength

Biophysical Journal 85, 3858-3864 (2003)

Fabrication of coupled quantum dots for multiport access

Applied Physics Letters 82, 1887 (2003)

A. Holleitner | R. Blick | K. Eberl

Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

APPLIED PHYSICS LETTERS 82 6 988-990 (2003)

Femtosecond buildup of screening and collective effects in photoexcited GaAs: How bare charges get dressed

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Fermi level on hydrogen terminated diamond surfaces

APPLIED PHYSICS LETTERS 82 14 2266-2268 (2003)

Ferromagnetic resonance in Ga1-xMnxAs

JOURNAL OF SUPERCONDUCTIVITY 16 1 75-78 (2003)

Ferromagnet-semiconductor hybrid structures: Hall devices and tunnel junctions

Physica E 16, 137-146 (2003)

Field-effect-induced midinfrared electroluminescence of a quantum-wire-cascade structure by remote ?-doping

Appl. Phys. Lett. 83, 1909-1911 (2003)

Free-standing GaN grown on epitaxial lateral overgrown GaN substrates

JOURNAL OF CRYSTAL GROWTH 255 3-4 277-281 (2003)

Frenkel exciton model of optical absorption and photoluminescence in alpha-PTCDA

Phys. Rev. B 68, 155202 (2003)

I. Vragovic | R. Scholz

Growth and characterization of GaN : Mn epitaxial films

JOURNAL OF APPLIED PHYSICS 93 12 9697-9702 (2003)

Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study

JOURNAL OF APPLIED PHYSICS 94 4 2289-2294 (2003)

A. Lehner | G. Steinhoff | M. S. Brandt | M. Eickhoff | M. Stutzmann

Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative X-ray photoelectron spectroscopy study

J. Appl. Phys. 94, 2289-2294 (2003)

A. Lehner | G. Steinhoff | M. S. Brandt | M. Eickhoff | M. Stutzmann

Hyperfine interactions at dangling bonds in amorphous germanium

PHYSICAL REVIEW B 68 20 205208 (2003)

Influence of surface oxides on hydrogen-sensitive Pd : GaN Schottky diodes

APPLIED PHYSICS LETTERS 83 4 773-775 (2003)

Influence of the electron-phonon interactions on the transport properties at the molecular scale

Proc. of SPIE 5219, 109-16 (2003)

Infrared spectroscopic study of the morphology of 3,4,9,10-perylene tetraCarboxylic dianhydride films grown on H-passivated Si(111)

J. Phys.: Condensed Matter 15, S2647-63 (2003)

InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 µm

Journal of Crystal Growth 251 (2003) 748-753.

Interaction of metals with perylene derivatives as a model system for contact formation in OFET structures

Proc. of SPIE 5217, 210-7 (2003)

B. A. Paez | G. Salvan | R. Scholz | T. U. Kampen | D. R. T. Zahn

Intraband photoresponse of SiGe quantum dot/quantum well multilayers

Physica E 16, 609-613 (2003)

D. Bougeard | K. Brunner | G. Abstreiter

Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells

THIN SOLID FILMS 430 1-2 202-207 (2003)

Investigation of point defects at the high-k oxides/Si(100) interface by electrically detected magnetic resonance

JOURNAL OF NON-CRYSTALLINE SOLIDS 322 1-3 168-173 (2003)

Kelvin probe spectroscopy of a two-dimensional electron gas below 300 mK

Appl. Phys. Lett. 83, 2602-2604 (2003)

Kinetics of the topotactic formation of siloxene

CHEMISTRY OF MATERIALS 15 4 910-915 (2003)

G. Vogg | M. S. Brandt | M. Stutzmann

Kondo effect in a few-electron quantum ring

Phys. Rev. Lett. 90, 196601-1 (2003)

Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

THIN SOLID FILMS 427 1-2 176-180 (2003)

Lateral index-guiding in InP-based laser diodes by oxidized AlAsSb layers

Workshop on Compound Semiconductor Devices and Integrated Circuits Europe (WOCSDICE), Fürigen, Switzerland (2003) 69-70.

G. Rösel | R. Todt | M. Grau | M. C. Amann

Local structure of Ge/Si nanostructures: uniqueness of XAFS spectroscopy

Nuclear Instruments & Methods, 199, 174-178 (2003)

Low-loss GaInAs-based waveguides for high-performance 5.5 mu m InP-based quantum cascade lasers

IEE Proceedings-Optoelectronics 150, 284-287 (2003)

G. Scarpa | N. Ulbrich | G. Böhm | G. Abstreiter | M. C. Amann

Magnetization of a two-dimensional electron gas with a second filled subband

D. Schuh, and M. Bichler
Phys. Rev. B 68 193308 (2003)

Marvellous things in marvellous rings: energy spectrum, spins and persistent currents

Physica E 16, 83-89 (2003)

Metamorphosis of the quantum Hall ferromagnet at nu=2/5

Phys. Rev. Lett. 91, 116804 (2003)

M. Chen | W. W. Kang | W. Wegscheider

Metastable phase in the quantum hall ferromagnet

sol. stat. com. 127, 163-168 (2003)

V. Piazza | V. Pellegrini | F. Beltram | W. Wegscheider

Microscopic description of nanostructures grown on (N11) surfaces

Journal of Computational Electronics 2, 275 (2003)

Mid-infrared electroluminescence from device with changeable electron-hole distance

Electronics Lett. 39, 108-110 (2003)

Midinfrared intraband electroluminescence from AllnAs quantum dots

Appl. Phys. Lett. 83, 1530-1532 (2003)

Momentum resolved tunnel spectroscopy of integer quantum Hall edges: A tool for measuring

M. Huber, M. Grayson, M. Rother, W. Biberacher, W. Wegscheider, M. Bichler and G. Abstreiter
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nextnano³ - Software für neuartige Nano Devices

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Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots

Microelectronics Journal 34, 667-669 (2003)

Non-perturbative solution for Bloch electrons in constant magnetic fields

Phys. Rev. Letters 91, 056405-1 (2003)

A. Trellakis

Nonradiative relaxation times in diagonal transition Si/SiGe quantum cascade structures

Appl. Phys. Lett. 83, 5371-5373 (2003)

Novel device applications of Stranski-Krastanov quantum dots

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Novel in-plane gate devices on hydrogenated diamond surfaces

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 199 1 56-63 (2003)

Novel in-plane gate devices on hydrogenated diamond surfaces

M. Stutzmann
phys. stat. sol. (a) 199, 56-63 (2003)

Observation of retardation effects in the spectrum of two-dimensional plasmons

Phys. Rev. Lett. 90, 156801 (2003)

Optical probing of a fractionally charged quasihole in an incompressible liquid

Phys. Rev. Lett. 91, 116403 (2003)

Optimization of type-II heterostructures for the tuning region in tunable laser diodes

Semiconductor Science and Technology 18 (2003) 325-329.

G. Rösel | F. Köhler | R. Meyer | M. C. Amann

pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

APPLIED PHYSICS LETTERS 83 1 177-179 (2003)

Phase coherent transport in two coupled quantum dots

Physica E-Low-Dimensional Systems & Nanostructures 16, 76 (2003)

Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces

APPLIED PHYSICS LETTERS 82 4 565-567 (2003)

Photoluminescence of Er3+-implanted amorphous hydrogenated silicon suboxides

PHYSICAL REVIEW B 68 16 165207 (2003)

A. Janotta | M. Schmidt | R. Janssen | M. Stutzmann | C. Buchal

Photoreflectance studies of N- and Ga-face AlGaN/GaN heterostructures confining a polarisation induced 2DEG

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 240 2 380-383 (2003)

Progress on the development of a widely-tunable twin-guide laser

IST-NEWTON Workshop on Tunable Laser Diodes / European Semiconductor Laser Workshop, Torino, Italy (2003).

R. Todt | R. Meyer | M. C. Amann | R. Laroy | G. Morthier

Prospects for carrier-mediated ferromagnetism in GaN

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 239 2 277-290 (2003)

T. Graf | S. T. B. Goennenwein | M. S. Brandt

Prospects of quantum cascade lasers with GaInAs Waveguides

Adv. in Solid State Phys. 43, 301-312 (2003) (ed. B. Kramer)

N. Ulbrich | G. Scarpa | G. Abstreiter | M. C. Amann

Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

Applied Physics Letters 83 (2003) 3123-3125.

M. Schowalter | A. Rosenauer | D. Gerthsen | M. Grau | M. C. Amann

Rabi-flopping of the ground state excition in a single self-assembled quantum dot

phys. stat. sol. (b) 238, 366-369 (2003)

E. Beham | A. Zrenner | F. Findeis | M. Bichler | G. Abstreiter

Raman characterization of strain and composition in small-sized self-assembled Si/Ge dots

Phys. Rev. B 68, 125302 (2003)

P. H. Tan | K. Brunner | D. Bougeard | G. Abstreiter

Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

Superlattices and Microstructures 33, 271-278 (2003)

Resonant inversion of the circular photogalvanic effect in n-doped quantum wells

Phys. Rev. B 68, 035319 (2003)

Resonant Raman scattering of double wall carbon nanotubes prepared by chemical vapor deposition method

Jour. of Appl. Phys. 94, 5715-5719 (2003)

Resonant spin-orbit interactions and phonon spin relaxation rates in superlattices

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J. A. Majewski | P. Vogl

Room temperature cw GaInAsSb-AlGaAsSb laser diodes for 3µm wavelength range

OSA Annual Meeting, Tucson, USA (2003) PDP10.

M. Grau | C. Lin | O. Dier | M. C. Amann

Scientific misconduct: Past, present, and future...

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 235 1 11-11 (2003)

M. Stutzmann | S. Hildebrandt

Scribing into hydrogenated diamond surfaces using atomic force microscopy

APPLIED PHYSICS LETTERS 82 19 3336-3338 (2003)

Single mode 1.55 µm VCSELs with low threshold and high output power

Electronics Letters 39 (2003) 1731-1732.

Singlet-triplet transition tuned by asymmetric gate voltages in a quantum ring

Phys. Rev. Lett. 91, 206802 (2003)

A. Fuhrer | T. Ihn | K. Ensslin | W. Wegscheider | M. Bichler

Size and density estimation of self-assembled InAs quantum dots on GaAs(001) substrate through the analysis of RHEED patterns

phys. stat. sol. (c) 0, No.4, 1121-1124 (2003)

J. W. Lee | D. Schuh | M. Bichler | G. Abstreiter

Spin bloade in ground-state resonance of a quantum dot

Europhysics Letters 62, 712 (2003)

Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films

PHYSICAL REVIEW B 67 16 165215 (2003)

Spin wave resonance in Ga1-xMnxAs

APPLIED PHYSICS LETTERS 82 5 730-732 (2003)

Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures

Phys. Rev. B. 68, 081302 (2003)

Spin-photocurrent in p-SiGe quantum wells under terahertz laser irradiation

Journal of Superconductivity 16, 415-418 (2003)

Spin-sensitive bleaching and spin relaxation in QWs

phys. stat. sol. (b) 238, 533-536 (2003)

Strain analysis of a quantum-wire system produced by cleaved edge overgrowth using grazing incidence x-ray diffraction

Appl. Phys. Lett. 83, 872-874 (2003)

Structural and doping effects in the half-metallic double perovskite A(2)CrWO(6) (A = Sr, Ba, and Ca)

PHYSICAL REVIEW B 68 14 144431 (2003)

Study of inversion domain pyramids formed during the GaN : Mg growth

SOLID-STATE ELECTRONICS 47 3 565-568 (2003)

Surface functionalization of amorphous silicon and silicon suboxides for biological applications

THIN SOLID FILMS 427 1-2 201-207 (2003)

The single quantum dot photodiode – a two-level system with electric contacts

Adv. in Solid State Phys. 43, 287-300 (2003) (ed. B. Kramer)

Theoretical studies of the vibrational properties of the 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) molecule

J. Molec. Struct. (Theochem) 625, 39-46 (2003)

A. Y. Kobitski | R. Scholz | D. R. T. Zahn

Theory of vertical and lateral Stark shifts of excitons in quantum dots

phys. stat. sol. 0, 1181-1184 (2003)

Time-resolved measurements and spatial photoluminescence distribution in InAs/AlGaAs quantum dots

Microelectronics Journal 34, 747-749 (2003)

Time-resolved photoluminescence study of excitons in alpha-PTCDA single crystals as a function of temperature

Phys. Rev. B 68, 155201 (2003)

A. Y. Kobitski | R. Scholz | H. P. Wagner | D. R. T. Zahn

Time-resolved photoluminescence study of excitons in thin PTCDA films at various temperatures

Appl. Surf. Sci. 212-213, 428-32 (2003)

Tunable single and dual mode operation of an external cavity quantum-dot injection laser

J. Phys. D: Appl. Phys. 36, 1-3 (2003)

Ultrafast coherent and incoherent dynamics of intersubband excitations in semiconductor quantum wells

Proceedings of SPIE 4992, 154-164 (2003)

Ultrafast formation of many-particle interactions in a photoexcited electron-hole plasma

Proceedings of SPIE 4992, 130-137 (2003)

Wavelength selective charge storage in self-assembled InGaAs/GaAs quantum dots

Appl. Phys. Lett. 83, 443-445 (2003)

Wavelength selective data storage in InGaAs-GaAs quantum dots

phys. stat. sol. (b) 238, 345-348 (2003)

M. Kroutvar | A. Zrenner | Y. Ducommun | J. J. Finley | G. Abstreiter

A new acceptor state in CVD-diamond

DIAMOND AND RELATED MATERIALS 11 3-6 347-350 (2002)

A novel split gate design to study interaction effects in quantum wires

Physica E 13, 89-93 (2002)

M. Tornow | M. Heiblum | D. Mahalu | H. Shtrikman | V. Umansky

A quantum dot infrared photodetector with lateral carrier transport

Physica E 13, 301-304 (2002)

L. Chu | A. Zrenner | D. Bougeard | M. Bichler | G. Abstreiter

Acoustical and optical magnetoplasma excitations in a bilayer electron system

D. Schuh, and G. Abstreiter
Phys. Rev. B 66, 241308-1 (2002)

Aharonov-Bohm oscillations for charge transport through two parallel quantum dots

Physica E-Low-Dimensional Systems & Nanostructures 12, 774 (2002)

A. Holleitner | H. Qin | R. Blick | K. Eberl | J. Kotthaus

Aharonov-Bohm oscillations of a tuneable quantum ring

Sem. Science and Technology 17, L22-L24 (2002)

Anomalous dispersion of charged excitons in dilute two-dimensional electron systems at low temperatures

Phys. Rev. B 66, 041309 (2002)

Anomalous x-ray diffraction on InAs/GaAs quantum dot systems

Appl. Phys. Lett. 81, 448-450 (2002)

T. Schulli | M. Sztucki | V. Chamard | T. Metzger | D. Schuh

Band-gap renormalization of modulation-doped quantum wires

Phys. Rev. B 65, 201304-1 (2002)

S. Sedlmaier | M. Stopa | G. Schedelbeck | W. Wegscheider | G. Abstreiter

Capacitance-voltage studies of Al-Schottky contacts on hydrogen-terminated diamond

APPLIED PHYSICS LETTERS 81 4 637-639 (2002)

J. A. Garrido | C. E. Nebel | M. Stutzmann | E. Snidero | P. Bergonzo

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 93 1-3 39-48 (2002)

Characterization of sub-micron in-plane devices in H-terminated diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 517-522 (2002)

Circular photogalvanic effect in SiGe semiconductor quantum wells

Mat. Res. Soc. Symp. Proc. 690, F3.11.1-F3.11.6 (2002)

Coherent Phonon Wavepackets in Quasi-One-Dimensional Organic Molecular Crystals

Physica B: Condensed Matter 316-317, 48-54 (2002)

T. W. Canzler | T. Hasche | R. S. Leo

Coherent properties of a two-level system based on a quantum-dot photodiode

Nature 418, 612-614 (2002)

Cyclotron resonance of composite fermions

Nature 415, 409-412 (2002)

I. V. Kukushkin | J. H. Smet | K. V. Klitzing | W. Wegscheider

Cyclotron spin-flip excitations in the 2D-electron system

Physica E 12, 574-577 (2002)

Dependence of the doping efficiency on material composition in n-type a-SiOx : H

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 579-584 (2002)

Dependence of the doping efficiency on material composition in n-type a-SiOx:H

A. Bergmaier, B. Stritzker, and M. Stutzmann
J. Non-Cryst. Solids 299-302, 579-584 (2002)

Device characterictics of vertical field effect transistors with ultra-short InGaAs/GaAs channels

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Dielectric response of molecules in empirical tight-binding theory

Phys. Rev. B 65, 035202 (2002)

T. B. Boykin | P. Vogl

Dielectric response of the electronic transitions in utrathin PTCDA layers grown on Ag(111) and Ag(110) substrates

Proc. Int. Conf. Excitonic Processes in Condensed Matter (2002), in: Nonlin. Opt. 29, 239-45 (2002)

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Effect of the interface on the local structure of Ge-Si nanostructures

J. Vac. Sci. Technol. A 20, 1116-1119 (2002)

Efficient light emission at 1.54 µm from Er in Si excited by hot electron injection through thin suboxide layers

J. of Appl. Phys. 91, 9764-9771 (2002)

Electrical and optical measurements of CVD diamond doped with sulfur

PHYSICAL REVIEW B 65 16 165409 (2002)

Electron spin resonance of phosphorus in n-type diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 434-441 (2002)

T. Graf | M. S. Brandt | C. E. Nebel | M. Stutzmann | S. Koizumi

Electronic properties of antidot lattices fabricated by atomic force lithography

Appl. Phys. Lett. 80, 252-254 (2002)

Electronic properties of nanostructures defined in Ga(Al)As heterostructures by local oxidation

Superlattices and Microstructures 31, 19-42 (2002)

Energy spectra of quantum rings

Microelectronic Engineering 63, 47-52 (2002)

Enhancement of photoluminescence from near-surface quantum dots by suppression of surface state density

Phys. Chem. Chem. Physics 4, 785-790 (2002)

Epitaxial growth of phosphorus doped diamond on {111} substrate

DIAMOND AND RELATED MATERIALS 11 3-6 328-331 (2002)

Er3+ luminescence in a-SiOx : H

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 688-693 (2002)

A. Janotta | M. Schmidt | R. Janssen | C. Buchal | M. Stutzmann

Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

SEMICONDUCTORS 36 11 1240-1243 (2002)

Evidence for high negative charge densities in AlF3 coatings on oxidized silicon: A promising source for high drift fields

Physica E 14, 259-262 (2002)

Femtosecond buildup of Coulomb screening in a photoexcited electron-hole plasma

Physica B 314, 248-254 (2002)

Femtosecond intersubband scattering of holes in Si1-xGex/Si quantum wells

Physica B 314, 255-258 (2002)

Femtosecond optical response of Exciton – LO phonon quasiparticles in GaAs

phys. stat. sol. (b) 231, No.1, 181-186 (2002)

Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots

Phys. Rev. B 66, 153316 (2002)

Finite wavevector scattering on the ? = 2/3 huge longitudinal resistance

Physica E 12, 72-75 (2002)

Five years of Rapid Research Notes in physica status solidi: The fastest refereed forum of publication

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 231 1 1-2 (2002)

Five years of Rapid Research Notes in physica status solidi: The fastest refereed forum of publication

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 191 1 R1-R2 (2002)

Frenkel exciton model of low temperature photoluminescence in alpha-PTCDA single crystals

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From Quantum Hall Ferromagnetism to Huge Longitudinal Resistance at the 2/3 Fractional Quantum Hall State

Phys. Rev. Lett. 89, 266801-1 (2002)

Full-band approaches for the quantum treatment of nanometer-scale MOS structures

Physica B 314, 345-349 (2002)

GaN-based heterostructures for sensor applications

DIAMOND AND RELATED MATERIALS 11 3-6 886-891 (2002)

Gas sensitive GaN/AlGaN-heterostructures

SENSORS AND ACTUATORS B-CHEMICAL 87 3 425-430 (2002)

J. Schalwig | G. Muller | M. Eickhoff | O. Ambacher | M. Stutzmann

Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor

Nature 415, 281-286 (2002)

Ge quantum dots in Si: self-assembly, stacking and level spectroscopy

Physica E 13, 1018-1021 (2002)

Ge-Si nanostructures for quantum-effect electronic devices

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Group III-nitride-based gas sensors for combustion monitoring

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 93 1-3 207-214 (2002)

J. Schalwig | G. Muller | M. Eickhoff | O. Ambacher | M. Stutzmann

Heterostructure field effect transistors based on nitride interfaces

J. Phys.: Condens. Matter 14, 3511 (2002)

High-performance 5.5µm quantum cascade lasers with high-reflection coating

IEE Proc.-Optoelectron. 149, 201-205 (2002)

Hole transport in SiGe channels on step-bunched vicinal Si surfaces

Physica E 13, 986-989 (2002)

R. Neumann | K. Brunner | G. Abstreiter

Hydrogen response mechanism of Pt-GaN Schottky diodes

APPLIED PHYSICS LETTERS 80 7 1222-1224 (2002)

Improved large optical cavity design for 10.6 µm (Al)GaAs quantum cascade lasers

Physica E 13, 844-847 (2002)

Influence of the degree of conjugation on excited state lifetimes in phenylene based materials

Synthetic Metals 127 (2002) 241-245

Integrating suspended quantum dot circuits for applications in nanomechanics

Appl. Phys. Lett. 81, 280-282 (2002)

J. Kirschbaum | E. M. Hohberger | R. H. Blick | W. Wegscheider | M. Bichler

Inter- and intra-subband LO phonon emission rates in GaAs/AlGaAs quantum disks

Physica B 314, 127-131 (2002)

N. Suzumura | M. Yamaguchi | N. Sawaki | P. Vogl

Intersubband staircase laser

Appl. Phys. Lett. 80, 4312-4314 (2002)

N. Ulbrich | G. Scarpa | G. Böhm | G. Abstreiter | M. C. Amann

Intersubband transitions of boron-doped self-assembled Ge quantum dots

Physica E 13, 1022-1025 (2002)

Intraband absorption and photocurrent spectroscopy of self-assembled p-type Si/SiGe quantum dots

Appl. Phys. Lett. 80, 2093-2095 (2002)

Kohärente Zustände in lateral definierten Quantenpunkten

Logos Verlag, Berlin, ISBN 3-8325-0038-3 (2002)

Laser beam induced currents in polycrystalline silicon thin films prepared by interference laser crystallization

JOURNAL OF APPLIED PHYSICS 91 7 4220-4228 (2002)

B. Rezek | C. E. Nebel | M. Stutzmann

Lateral variation of the electron density across a Hall bar in high electric and magnetic fields

Phys. Rev. B 65, 165307 (2002)

J. Frankenberger | A. Zrenner | M. Bichler | G. Abstreiter

Level bleaching in a single quantum dot observed by photocurrent spectroscopy

Physica E 13, 139-142 (2002)

E. Beham | A. Zrenner | F. Findeis | M. Bichler | G. Abstreiter

Local oxidation of hydrogenated diamond surfaces for device fabrication

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 523-528 (2002)

Local spectroscopy of edge channels in the quantum Hall regime with local probe techniques

Physica E 13, 671-674 (2002)

Local structure of Ge quantum dots self-assembled on Si(100) probed by x-ray absorption fine-structure spectroscopy

Phys. Rev. B 66, 075319 (2002)

A. V. Kolobov | H. Oyanagi | S. Wei | K. Brunner | G. Abstreiter

Low temperature properties of the p-type surface conductivity of diamond

DIAMOND AND RELATED MATERIALS 11 3-6 351-354 (2002)

Low temperature time-resolved photoluminescence characterisation of 3,4,9,10,-perylene tetracarboxylic dianhydride crystals

Phys. Rev. B 66, 153204 (2002)

A. Y. Kobitski | R. Scholz | I. Vragovic | H. P. Wagner | D. R. T. Zahn

L-valley electron transport in GaAs-AlAs double-barrier resonant tunneling structures studied by ballistic electron emission microscopy

Phys. Rev. B 66, 033309 (2002)

D. Rakoczy | G. Strasser | C. Strahberger | J. Smoliner

Magnetoresistance calculations for a two-dimensional electron gas with unilateral short-period strong modulation

Phys. Rev. B 66, 205318 (2002)

K. Výborný | L. Smrcka | R. A. Deutschmann

Magnetotransport in freely suspended two-dimensional electron systems for integrated nanomechanical resonators

Physica E 12, 487-490 (2002)

Magnetotransport through AFM-defined antidot arrays

Physica E 13, 719-722 (2002)

Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot

Phys. Rev. B 66, 045313 (2002)

Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41 1AB L10-L12 (2002)

Microscopic models for time-resolved photoluminescence in alpha-PTCDA single crystals

in: Physics of Semiconductors 2002, Proc. of the 26th Int. Conf. on the Physics of Semiconductors, Edinburgh, 29 July - 2 August 2002, Institute of Physics Conf. Ser. 171, ed. by A.R. Long and J. H. Davies, Institute of Physics Publishing (Bristol 2002), P 266 (2002)

Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures

Applied Physics Letters 80, 2002 (2002)

Midinfrared intersubband electroluminescence of Si/SiGe quantum cascade structures

Appl. Phys. Lett. 80, 2260-2262 (2002)

I. Bormann | K. Brunner | S. Hackenbuchner | G. Zandler | G. Abstreiter

Miniband transport in vertical superlattice field effect transistors

Physica E 12, 281-284 (2002)

R. A. Deutschmann | W. Wegscheider | M. Rother | M. Bichler | G. Abstreiter

Model calculation of the optical properties of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) thin films

Europhys. Lett. 57, 288-94 (2002)

I. Vragovic | R. Scholz | M. Schreiber

Morphological transformation of InyGa1-yAs islands, fabricated by Stranski-Krastanov growth

Materials Science and Engineering B 88, 225-229 (2002)

A. Lorke | R. Blossey | J. M. Garcia | M. Bichler | G. Abstreiter

Multiscale approaches for metal thin film growth

Computational Materials Science 24, 58-65 (2002)

P. Vogl | U. Hansen | V. Fiorentini

Negative magneto-drag of double layer 2DEGs

Physica E 12, 119-124 (2002)

Nonequilibrium band structure of nano-devices

Physica B 314, 145-149 (2002)

Nonlinear optical response of highly energetic excitons in GaAs: Microscopic electrodynamics at semiconductor interfaces

Phys. Rev. B 65, 085314 (2002)

Nonlinear superlattice transport limited by Joule heating

J. of Appl. Phys. 92, 6043-6046 (2002)

R. Scheuerer | K. F. Renk | E. Schomburg | W. Wegscheider | M. Bichler

Novel Si/Ge quantum dot mid-infrared photodetector structures with in-plane transport

in: Compound Semiconductors 2001, Institute of Physics Conference Series 170, eds.: Y. Arakawa, Y. Hirayama, K. Kishino, and H. Yamaguchi, Institute of Physics Publishing Bristol, 589-594 (2002)

D. Bougeard | K. Brunner | G. Abstreiter

n-type doping of diamond by sulfur and phosphorus

DIAMOND AND RELATED MATERIALS 11 3-6 289-295 (2002)

n-Type doping of diamond by sulfur and phosphorus

M. Stutzmann
Diam. & Rel. Mat. 11, 289-295 (2002)

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN

Mat. Sci.& Eng. B93, 143-146 (2002)

R. Neuberger | G. Müller | M. Eickhoff | O. Ambacher | M. Stutzmann

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 93 1-3 143-146 (2002)

R. Neuberger | G. Muller | M. Eickhoff | O. Ambacher | M. Stutzmann

Optical properties of single charge tuneable InGaAs quantum dots

Physica E 13, 127-130 (2002)

Optically detected single-electron charging in a quantum dot

Physica E 13, 95-100 (2002)

Papers presented at the 275. WE-Heraeus-Seminar: Hardware Concepts for Quantum Computing - Bad Honnef, Germany, May 13-15, 2002 - Preface

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 233 3 375-375 (2002)

M. S. Brandt | M. Fanciulli | M. Stutzmann

Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 234 3 713-716 (2002)

Probing and controlling the bonds of an artificial molecule

Science 297, 70 (2002)

A. Holleitner | R. Blick | A. Huttel | K. Eberl | J. Kotthaus

Probing the phonon dispersion relations of graphite from the double-resonance process of Stokes and anti-Stokes Raman scatterings in multiwalled carbon nanotubes

Phys. Rev. B 66, 245410 (2002)

Properties of grain boundaries in laser-crystallized silicon thin films

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 726-730 (2002)

C. Eisele | T. Bach | C. E. Nebel | M. Stutzmann

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

J. Phys.: Condens. Matter 14, 3399 (2002)

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

JOURNAL OF PHYSICS-CONDENSED MATTER 14 13 3399-3434 (2002)

Quantum wires and quantum dots defined by lithography with an atomic force microscope

Microelectronics Journal 33, 319-321 (2002)

Raman spectroscopy of the PTCDA - inorganic semiconductor interface: Evidence for Charge Transfer?

Appl. Surf. Sci. 190, 386-9 (2002)

Removal of spin degeneracy in p-SiGe quantum wells proved by spin photocurrents

Phys. Rev. B 66, 075328 (2002)

Resonant effect of Zener tunneling current

Phys. Rev. B 65, 233308 (2002)

Role of defect centers in recombination processes in GaN monocrystals

APPLIED PHYSICS LETTERS 80 16 2824-2826 (2002)

Scanning gate measurements on a quantum wire

Physica E 12, 691-694 (2002)

Self-similar optical absorption spectra in high magnetic fields

in Physics of Semiconductors (Eds. A. R. Long and J. H. Davies, Institute of Physics Publ., Bristol, 2003), E1.3 (2002)

P. Vogl | C. Strahberger

Si/Ge nanostructures

Rep. Prog. Phys. 65, 27-72 (2002)

K. Brunner

Silicon/silicon suboxide heterostructures grown by molecular beam epitaxy

Materials Science and Engineering B 89, 274-278 (2002)

A. Sticht | M. Markmann | K. Brunner | G. Abstreiter | E. Müller

Spectral Measurement of the hall angle response in normal state cuprate superconductors

Phys. Rev. Lett. 89, 037003-1 (2002)

M. Grayson | L. B. Rigal | D. C. Schmadel | H. D. Drew | P. J. Kung

Spectroscopic properties of a prototypic organic semiconductor: The case of PTCDA

in: Proc. of Int. School of Physics "E. Fermi", course CXLIX: Organic nanostructures: Science and applications, IOS Press (Amsterdam 2002), ed. by V. M. Agranovich and G. C. La Rocca, p. 379-403 (2002)

Spin polarized tunneling through single-crystal GaAs (001) barriers

Appl. Phys. Lett. 80, 4582-4584 (2002)

Spin-sensitive bleaching and monopolar spin orientation in quantum wells

Phys. Rev. Lett. 88, 057401-1 (2002)

Strain-compensated InP-based quantum cascade lasers with and without injector regions

in Proc.of the 14th Indium Phosphide and related materials conference, 735-738 (2002)

G. Scarpa | N. Ulbrich | G. Böhm | M. C. Amann

Structural and optical properties of vertically correlated Ge island layers grown at low temperatures

Materials Science and Engineering B 89, 54-57 (2002)

Surface functionalization of amorphous silicon and silicon suboxides for biological applications

M. Stutzmann
Thin Sol. Films 427, 201-207 (2002)

Surface-enhanced Raman scattering study of silver deposition on thin Alq3 layers

Appl. Surf. Sci. 190, 371-5 (2002)

Synthesis and characterization of novel oligo(phenylenevinylene) derivatives

Synthetic Metals 119 (2001) pp. 183-184

Synthesis and Characterization of Novel para- and meta-Phenylenevinylene Derivatives: Fine Tuning of the Electronic and Optical Properties of Conjugated Materials

J. Phys. Chem. B. (2002) 106 (25); 6442-6450

The lever-arm model: describing resonant tunneling under bias at a fractional quantum Hall edge

Physica E 12, 80-83 (2002)

M. Grayson | D. C. Tsui | L. N. Pfeiffer | K. W. West | A. M. Chang

The Mn3+/2+ acceptor level in group III nitrides

APPLIED PHYSICS LETTERS 81 27 5159-5161 (2002)

T. Graf | M. Gjukic | M. S. Brandt | M. Stutzman | O. Ambacher

Thin SiOx layers embedded in single crystalline silicon

Physica E 13, 978-981 (2002)

A. Sticht | M. Markmann | K. Brunner | G. Abstreiter

Three-dimensional spectral solution of the Schr?dinger equation for arbitrary band structures

Journal of Applied Physics 92, 3711 (2002)

U. Ravaioli | A. Trellakis

Tight-binding simulation of an InGaN/GaN quantum well with indium concentration fluctuation

phys. stat. sol. (c) 0, 298-301 (2002)

Towards fully quantum mechanical 3D device simulation

Journal of Computational Electronics 1, 81 (2002)

M. Sabathil | S. Hackenbuchner | J. A. Majewski | G. Zandler | P. Vogl

Transferable tight-binding parametrization for the group-III nitrides

Appl. Phys. Lett. 81, 4838-40 (2002)

J. M. Jancu | F. Bassani | F. D. Sala | R. Scholz

Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation

phys. stat. sol. (b) 234, 805 (2002)

Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 234 3 805-809 (2002)

Tunneling between edge channels in the quantum Hall regime manipulated with a scanning force microscope

Microelectronic Engineering 63, 81-85 (2002)

T. Ihn | J. Rychen | K. Ensslin | W. Wegscheider | M. Bichler

Tunneling in the quantum Hall regime between orthogonal quantum wells

Physica E 12, 125-128 (2002)

Two-color femtosecond spectroscopy of blue-shifted InAs/AlGaAs quantum dots

phys. stat. sol. (b) 233, No. 3, 401-407 (2002)

Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunctions

phys. stat. sol. (c) 0, 392-396 (2002)

Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems

Appl. Phys. Lett. 81, 3879-3881 (2002)

H. X. Tang | X. M. H. Huang | M. L. Roukes | M. Bichler | W. Wegscheider

Ultrafast intersubband scattering of holes in p-type modulation-doped Si1-xGex/Si multiple quantum wells

Physica E 13, 485-488 (2002)

Ultrafast switch-off of an electrically pumped quantum-dot laser

Appl. Phys. Lett. 81, 1177-1179 (2002)

Vertical field effect transistors realized by cleaved-edge overgrowth

Physica E 13, 920-924 (2002)

Accelerated dynamics simulations of interstitial-cluster growth

Solid State Communications 120 (7-8), 279 (2001)

Band structure and optical properties of germanium sheet polymers

PHYSICAL REVIEW B 64 3 033311|ISSN 0163-1829 (2001)

Breakdown quenching in high electron mobility transistor by using body contact

IEEE Transaction on Electron Dev. ED48 (10), 2188-2191 (2001)

A. Sleiman | A. Di Carlo | P. Lugli | G. Zandler

Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission

Journal of Appl. Phys. 89, 1180-1183 (2001)

J. Feldmann | S. T. Cundiff | M. Arzberger | G. Böhm | G. Abstreiter

Charging dynamics of self-assembled InAs quantum dots investigated by wavelength selective optically induced charge stroage measurements

Phys. stat. sol. (b) 224, 357-360 (2001)

D. Heinrich | J. Hoffmann | A. Zrenner | G. Böhm | G. Abstreiter

Coherent coupling of two quantum dots embedded in an Aharonov-Bohm interferometer

Physical Review Letters 87, 256802 (2001)

A. Holleitner | C. Decker | H. Qin | K. Eberl | R. Blick

Coherent external and internal phonons in quasi-one-dimensional organic molecular crystals

Phys. Rev. Lett. 86, 4060-3 (2001)

Coherent phonons in quasi-one-dimensional organic crystals

J. Lumin 94-95, 673-6 (2001)

T. Hasche | T. W. Canzler | R. S. Leo

Coherent superposition of photon- and phonon-assisted tunneling in coupled quantum dots

Physical Review B 64, 241302 (2001)

H. Qin | A. Holleitner | K. Eberl | R. Blick

Commensurability effects in lateral surface-doped superlattices

Appl. Phys. Lett. 78, 2175-2177 (2001)

R. A. Deutschmann | C. Stocken | W. Wegscheider | M. Bichler | G. Abstreiter

Compositional analysis based on electron holography and a chemically sensitive reflection

Ultramicroscopy 88, 51-61 (2001)

A. Rosenauer | D. V. Dyck | M. Arzberger | G. Abstreiter

Compositional analysis based upon electron holography and a chemically sensitive reflection

Microscopy of Semiconducting Materials 2001, Institute of Physics Conference Series 169, 33-36 (2001)

Continuous room-temperature operation of electrically pumped quantum-dot microcylinder lasers

Appl. Phys. Lett. 79, 1766-1768 (2001)

M. Arzberger | G. Böhm | M. C. Amann | G. Abstreiter

Dark pulse formation in a quantum-dot laser

Appl. Phys. Lett. 79, 18-20 (2001)

Defect-related noise in AlN and AlGaN alloys

PHYSICA B-CONDENSED MATTER 308 69-72 (2001)

Efficient tunable luminescence of SiGe alloy sheet polymers

APPLIED PHYSICS LETTERS 78 25 3956-3958 (2001)

G. Vogg | A. J. P. Meyer | C. Miesner | M. S. Brandt | M. Stutzmann

Elastic properties of the layered zintl-phase CaSi2

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 2 213-219 (2001)

G. Vogg | M. S. Brandt | M. Stutzmann

Electrically detected magnetic resonance studies of phosphorus doped diamond

PHYSICA B-CONDENSED MATTER 308 593-597 (2001)

T. Graf | M. S. Brandt | C. E. Nebel | M. Stutzmann | S. Koizumi

Electron affinity of AlxGa1-xN(0001) surfaces

APPLIED PHYSICS LETTERS 78 17 2503-2505 (2001)

Electron and hole impact excitation of Er in MBE grown Si:O and Si1-yCy diodes

Materials Science and Engineering B 81, 109-112 (2001)

M. Markmann | R. Neumann | K. Brunner | G. Abstreiter

Electronic properties of nanostructures defined in Ga(Al)As heterostructures by local oxidation

Physica E 9, 84-93 (2001)

Energy spectra of quantum rings

Nature 413, 822-825 (2001)

Enhanced k||-filtering effects in ballistic electron emission experiments

Phys. Rev. B, 63, 205306 (2001)

C. Strahberger | J. Smoliner | R. Heer | G. Strasser

Epitaxial alloy films of zintl-phase Ca(Si1-xGex)(2)

JOURNAL OF CRYSTAL GROWTH 223 4 573-576 (2001)

G. Vogg | C. Miesner | M. S. Brandt | M. Stutzmann | G. Abstreiter

Excitation efficiency of electrons and holes in forward and reverse biased erbium doped Si-diodes grown by MBE

App. Phys. Lett. 78, 210 (2001)

M. Markmann | E. Neufeld | A. Sticht | K. Brunner | G. Abstreiter

Excitonic transitions in homoepitaxial GaN

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 497-500 (2001)

Femtosecond buildup of Coulomb screening in photoexcited GaAs probed via ultrabroadband THz spectroscopy

Journal of Luminescence 94-95, 555-558 (2001)

Fermi liquid to luttinger liquid transition at the edge of a two-dimensional electron gas

Phys. Rev. Lett. 87, 186806 (2001)

M. Hilke | D. C. Tsui | M. Grayson | L. N. Pfeiffer | K. W. West

First principles study of spin-electronics: Zero-field splitting in superlattices

in: Proc. 25th. Int. Conf. Semicond., Springer, Heidelberg, (2001)

J. A. Majewski | P. Vogl | P. Lugli

g values of effective mass donors in AlxGa1-xN alloys

PHYSICAL REVIEW B 63 16 165204|ISSN 0163-1829 (2001)

Gain characteristics of self-assembled InAs/GaAs quantum dots

phys. stat. sol. (b) 224, 827-831 (2001)

M. Arzberger | G. Böhm | M. C. Amann | G. Abstreiter

Generation-recombination noise of DX centers in AlN : Si

APPLIED PHYSICS LETTERS 79 15 2396-2398 (2001)

Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires

Phys. Rev. B. 63, 205318-1 - 205318-5 (2001)

Group-III-nitride based gas sensing devices

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 1 39-45 (2001)

J. Schalwig | G. Muller | O. Ambacher | M. Stutzmann

Growth of organic films on passivated semiconductor surfaces: gallium arsenide versus silicon

Appl. Surf. Sci. 175-176, 326-31 (2001)

T. U. Kampen | G. Salvan | D. Tenne | R. Scholz | D. R. T. Zahn

High-electron-mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 1 85-89 (2001)

R. Neuberger | G. Muller | O. Ambacher | M. Stutzmann

High-temperature (T> 470 K) pulsed operation of 5.5µm quantum cascade lasers with high-reflection coating

Electronics Letters 37, 1341-1342 (2001)

Hole emission from Ge/Si quantum dots studied by time-resolved capacitance spectroscopy

phys. stat. sol. (b) 224, 261-264 (2001)

How many-particle interactions develop after ultfrafast excitation of an electron-hole plasma

Nature 414, 286-289 (2001)

Hydrogen-induced transport properties of holes in diamond surface layers

APPLIED PHYSICS LETTERS 79 27 4541-4543 (2001)

Influence of thiol coupling on photoluminescence of near surface InAs quantum dots

phys. stat. sol. (b) 224, 871-875 (2001)

Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films

JOURNAL OF APPLIED PHYSICS 90 9 4868-4870 (2001)

Intersubband photocurrent spectroscopy on self-assembled In(Ga)As/GaAs quantum dots

phys. stat. sol. (b) 224, 591-594 (2001)

L. Chu | A. Zrenner | M. Bichler | G. Böhm | G. Abstreiter

Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications

THIN SOLID FILMS 395 1-2 305-309 (2001)

S. Klein | F. Finger | R. Carius | H. Wagner | M. Stutzmann

Investigation of In segregation in InAs/AlAs quantum-well structures

Appl. Phys. Lett. 79, 4426-4428 (2001)

Investigation of spin pairing in a semiconductor quantum dot

phys. stat. sol. (b) 224, 561-565 (2001)

S. Lüscher | T. Heinzel | K. Ensslin | W. Wegscheider | M. Bichler

Ion-induced modulation of channel currents in AlGaN/GaN high-electron-mobility transistors

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 183 2 R10-R12 (2001)

R. Neuberger | G. Muller | O. Ambacher | M. Stutzmann

Ising feromagnetism and domain morphology in the fractional quantum hall regime

Phys. Rev. Lett. 86, 2412-2415 (2001)

J. H. Smet | R. A. Deutschmann | W. Wegscheider | G. Abstreiter | K. V. Klitzing

Laser crystallisation of silicon-germanium alloys

POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE 80-81 205-210 (2001)

C. Eisele | C. E. Nebel | M. Stutzmann

Lateral photodetectors with Ge quantum dots in Si

Infrared Physics & Technology 42, 461-465 (2001)

C. Miesner | K. Brunner | G. Abstreiter

Linewidth broadening of quantum dot emmission caused by temperature fluctuations

phys. stat. sol. (b) 224, 655-658 (2001)

M. Arzberger | M. C. Amann

Local structure of Ge/Si (100) self-assembled quantum dots

Journal of China University of Science and Technology 31, 282-288 (2001)

Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots

Appl. Phys. Lett. 78, 451-453 (2001)

Local structure of uncapped and Si-capped Ge/Si(100) self-assembled quantum dots studied by fluorescent X-ray absorption fine structure

Proc. of the 6th International Symposium on Advanced Physical Fields: Growth of Well-defined Nanostructures, (6.-9. March 2001, Tsukuba, Japan), ed.: N. Koguchi, p. 167 (2001)

Long living excited states in boron doped diamond

JOURNAL OF APPLIED PHYSICS 89 4 2237-2240 (2001)

C. E. Nebel | E. Rohrer | M. Stutzmann

Low temperature surface conductivity of hydrogenated diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 186 2 241-247 (2001)

Magnetic field effects and k||-filtering in BEEM on GaAs/AlGaAs resonant tunneling structures

Appl. Phys. A, 72, 223 (2001)

J. Smoliner | R. Heer | G. Strasser | C. Strahberger

Magneto-optics on single quantum dots

Physica B 298, 239-245 (2001)

A. Zrenner | F. Findeis | M. Baier | M. Bichler | G. Abstreiter

Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs

Physica E 10, 57-61 (2001)

Miniband transport in vertical superlattice field-effect transistors

Appl. Phys. Lett. 79, 1564-1566 (2001)

R. A. Deutschmann | W. Wegscheider | M. Rother | M. Bichler | G. Abstreiter

Nonlinear ground-state absorption observed in a single quantum dot

Appl. Phys. Lett. 79, 2808-2810 (2001)

E. Beham | A. Zrenner | F. Findeis | M. Bichler | G. Abstreiter

Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs

Physica E 10, 52-56 (2001)

Optical and magneto-optical investigartions on single-quantum dots

Physica E 9, 114-123 (2001)

Optical excitations of a self-assembled artificial ion

Phys. Rev. B 63, 121309-1-121309-4 (2001)

F. Findeis | M. Baier | A. Zrenner | M. Bichler | G. Abstreiter

Optical spectroscopy of charged excitons in single quantum dot photodiodes

Phys. Rev. B 64, 195326 (2001)

M. Baier | F. Findeis | A. Zrenner | M. Bichler | G. Abstreiter

Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN

PHYSICAL REVIEW B 63 12 art. no.-125203 (2001)

Ordering and electronic properties of self-assembled Si/Ge quantum dots

J. Appl. Phys. 40, 1860-1865 (2001)

K. Brunner | G. Abstreiter

Papers presented at the 247. WE-Heraeus Seminar on New Materials for Multifunctional Sensor Applications Tutzing (Germany), December 13-15, 2000 - Preface

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 1 V-V (2001)

O. Ambacher | M. S. Brandt | C. E. Nebel | M. Stutzmann

Periodic light coupler gratings in amorphous thin film solar cells

JOURNAL OF APPLIED PHYSICS 89 12 7722-7726 (2001)

C. Eisele | C. E. Nebel | M. Stutzmann

Phase diagram of a quantum dot with steep walls in strong magnetic fields

phys. stat. sol. (b) 224, 555-560 (2001)

Phonon-assisted biexciton generation in a single quantum dot

phys. stat. sol. (b) 224, 337-341 (2001)

F. Findeis | A. Zrenner | G. Böhm | G. Abstreiter

Photocurrent and photoluminescence of a single self-assembled quantum dot in electric fields

Appl. Phys. Lett. 78, 2958-2960 (2001)

F. Findeis | M. Baier | E. Beham | A. Zrenner | G. Abstreiter

Photoluminescence and AFM Studies on Blue Shifted InAs/AlyGa1-yAs Quantum Dots

phys. stat. sol. (b) 224, 47-51 (2001)

E. F. Duijs | F. Findeis | A. Zrenner | M. Bichler | G. Abstreiter

Photoluminescence of Ga-face AlGaN/GaN single heterostructures

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 82 1-3 200-202 (2001)

Photoluminescence study of excitons in homoepitaxial GaN

JOURNAL OF APPLIED PHYSICS 90 11 5627-5631 (2001)

physica status solidi: Serving the solid state physics community since 40 years

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 186 1 V-VI (2001)

Physica status solidi: Serving the solid state physics community since 40 years

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 226 1 V-VI (2001)

Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures

JOURNAL OF APPLIED PHYSICS 90 7 3383-3386 (2001)

M. Eickhoff | O. Ambacher | G. Krotz | M. Stutzmann

Playing with polarity

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 505-512 (2001)

Polarization induced 2D hole gas in GaN/AlGaN heterostructures

J. Crystal Growth 230, 607 (2001)

S. Hackenbuchner | J. A. Majewski | G. Zandler | P. Vogl

Polygermanosilyne calcium hydroxide intercalation compounds formed by topotactic transformation of Ca(Si1-xGex)(2) alloy zintl phases in ambient atmosphere

MONATSHEFTE FUR CHEMIE 132 10 1125-1135 (2001)

G. Vogg | L. J. P. Meyer | C. Miesner | M. S. Brandt | M. Stutzmann

Quantification of segregation and mass transport in InxGa1-xAs/GaAs Stranski-Krastanow layers

Phys. Rev. B 64, 245334 (2001)

Quantum interference in artificial band structures

Phys. Rev. Lett. 86, 1857-1860 (2001)

R. A. Deutschmann | W. Wegscheider | M. Rother | M. Bichler | G. Abstreiter

Quantum-dot infrared photodetector with lateral carrier transport

Appl. Phys. Lett. 79, 2249-2251 (2001)

L. Chu | A. Zrenner | M. Bichler | G. Abstreiter

Raman spectroscopy: a powerful tool for characterisation of Ag / 3,4,9,10-perylene-tetracarboxylic-dianhydride / GaAs heterostructures

Appl. Surf. Sci. 179, 113-7 (2001)

Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

JOURNAL OF APPLIED PHYSICS 90 9 4735-4740 (2001)

Resonant Tunneling into a Biased Fractional Quantum Hall Edge

Phys. Rev. Lett. 86, 2645-2648 (2001)

M. Grayson | D. C. Tsui | L. N. Pfeiffer | K. W. West | A. M. Chang

Roughening of close-packed singular surfaces

Phys.Rev. B 63, 153402 (2001)

F. Trudu | V. Fiorentini | P. Ruggerone | U. Hansen

Self-Ordering of Ge islands on Si substrates mediated by local strain fields

phys. stat. sol. (b) 224, 531-535 (2001)

K. Brunner | J. Zhu | G. Abstreiter | O. Kienzle | F. Ernst

Signatures of spin pairing in chaotic quantum dots

Phys. Rev. Lett. 86, 2118-2121 (2001)

S. Lüscher | T. Heinzel | K. Ensslin | W. Wegscheider | M. Bichler

Simulation of vertical CEOFETs by a coupled solution of the Schrödingers equation with a hydrodynamic transport model

in: Simulation of Semiconductor Processes and Devices 2001, Springer Conference Proceedings,
eds.: D. Tsoukalas, and C. Tsamis, Springer Berlin, pp. 222 (2001)

Space charge spectroscopy of diamond

DIAMOND AND RELATED MATERIALS 10 3-7 639-644 (2001)

C. E. Nebel | R. Zeisel | M. Stutzmann

Space charge spectroscopy of self assembled Ge quantum dots in Si

phys. stat. sol. (b) 224, 237-240 (2001)

T. Asperger | C. Miesner | K. Brunner | G. Abstreiter

Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures

APPLIED PHYSICS LETTERS 79 7 952-954 (2001)

Spectroscopic properties of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) thin films

in: Electrons and Photons in Solids, ed. by G. La Rocca, G. Grosso, M. Tosi, Quaderni della Scuola Normale di Pisa, (Pisa 2001), p. 387-401

R. Scholz | I. Vragovic | M. Schreiber

Spin effects in the magnetodrag between double quantum wells

Phys. Rev. 63, 041305 (2001)

Spin-dependent electronic noise

PHYSICA E 10 1-3 67-70 (2001)

M. S. Brandt | S. T. B. Goennenwein | M. Stutzmann

Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy

phys. stat. sol. (b) 224, 213-216 (2001)

Structural investigations on self-organized Si/SiGe islands by grazing incidence small angle X-Ray scattering

phys. stat. sol. (b) 224, 241-245 (2001)

Study of structural defects limiting the luminescence of InGaN single quantum wells

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 80 1-3 313-317 (2001)

A. Cremades | J. Piqueras | M. Albrecht | M. Stutzmann | H. P. Strunk

Supported lipid membrane on semiconductor electrode

Materials Chem. and Phys. 70, 187-190 (2001)

A. Abdelghani | C. Jacquin | M. Huber | R. Deutschmann | E. Sackmann

Thermodynamic processes of Si-interstitial clusters

Computational Nanoscience 2001, 117 (2001)

J. Kim | S. Birner | D. A. Richie | J. W. Wilkins | A. F. Voter

Time-resolved amplified spontaneous emission in InAs/GaAs quantum dots

phys. stat. sol. (b) 224, 475-480 (2001)

Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 603-606 (2001)

Ultrafast dynamics of intersubband excitations in a quasi-two-dimensional hole gas

G. Abstreiter
Phys. Rev. Lett. 86, 1122-1125 (2001)

Vertical and lateral mid-infrared photocurrent study on Ge quantum dots in Si

phys. stat. sol. (b) 224, 605-608 (2001)

C. Miesner | K. Brunner | G. Abstreiter

Wetting behaviour of GaN surfaces with Ga- or N-face polarity

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 519-522 (2001)

X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy

Journal of Appl. Phys. 89, 4836-4842 (2001)

A close look on single quantum dots

Journal of Chemical Physics 112, 7790-7798 (2000)

A. Zrenner

A New Tool for Studying Phase Coherent Phenomena in Quantum Dots

Springer Lecture Notes in Physics 547, 35 (2000)

A self-consistent-charge density-functional based tight-binding method for predictive materials simulations in physics, chemistry and biology

phys. stat. sol. (b) 217, 41-62 (2000)

Admittance spectroscopy of Ge quantum dots in Si

Thin Solid Films 380, 227-229 (2000)

T. Asperger | C. Miesner | K. Brunner | G. Abstreiter

Aims and purpose of the 216. WE-Heraeus Seminar

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 177 1 3-3 (2000)

J. A. Schaefer | R. Schlogl | M. Stutzmann

AlGaN-based ultraviolet light detectors with integrated optical filters

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18 2 757-760 (2000)

U. Karrer | A. Dobner | O. Ambacher | M. Stutzmann

Breakdown of Shubnikov-de Haas oscillations in a short-period 1D lateral superlattice

Physica E 6, 561-564 (2000)
Proc. of the 13th Int. Conf. on the EP2DS-13 held in Ottawa, Ontario, Canada 1-6 Aug 99

R. A. Deutschmann | A. Lorke | W. Wegscheider | M. Bichler | G. Abstreiter

Bridging the gap with cleaved edge overgrowth superlattics: on minigaps, magnetic breakdown and quantum interference in artificial bandstructures

G. Abstreiter
in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 865-868 (2001)

Calculation of electronic states in semiconductor heterostructures with an empirical spds* tight-binding model

phys. stat. sol. (b) 217, 449-60 (2000)

R. Scholz | J. M. Jancu | F. Beltram | F. Bassani

Capacitance-voltage and admittance spectrocopy of self-assembled Ge islands in Si

Appl. Phys. Lett. 77, 2704-2706 (2000)

C. Miesner | T. Asperger | K. Brunner | G. Abstreiter

Capacitance-voltage profiling of deuterium passivation and diffusion in diamond Schottky diodes

DIAMOND AND RELATED MATERIALS 9 3-6 413-416 (2000)

R. Zeisel | C. E. Nebel | M. Stutzmann

Characterization of InGaN thin films using high-resolution x-ray diffraction

Appl. Phys. Lett. 76, 577-579 (2000)

Circular photogalvanic effect in p-GaAs/AlGaAs MQW

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 719-720 (2001)

Collapse of the excitonic states at rs = 8 in high quality GaAs/AlGaAs single quantum wells

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 511-512 (2001)

Computational issues in the simulation of semiconductor quantum wires

Computer Methods in Applied Mechanics and Engineering 181, 437 (2000)

A. Trellakis | U. Ravaioli

Computer simulation of materials at atomic level

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 217 1 3-3 (2000)

Conductance quantization in an array of ballistic constrictions

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 755-756 (2001)

S. D. Haan | A. Lorke | J. P. Kotthaus | W. Wegscheider | M. Bichler

Defects in planar Si pn junctions studied with electrically detected magnetic resonance

APPLIED PHYSICS LETTERS 76 16 2280-2282 (2000)

Differences in vibronic and electronic excitations of PTCDA on Ag(111) and Ag(110)

Surf. Sci. 454-456, 60-6 (2000)

Direct observation of hole edge channels in a two-dimensional electron gas

Physica E 6, 230-233 (2000)
Proc. of the 13th Int. Conf. on the EP2DS-13 held in Ottawa, Ontario, Canada 1-6 Aug 99

Drag effect between 2D electron gases: composite fermion and screening effects

Physica E 6, 586-589 (2000)
Proc. of the 13th Int. Conf. on the EP2DS-13 held in Ottawa, Ontario, Canada 1-6 Aug 99

C. Jörger | W. Dietsche | W. Wegscheider | K. V. Klitzing

DX-behavior of Si in AlN

PHYSICAL REVIEW B 61 R16283-R16286 (2000)

Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

Appl. Phys. Lett. 76, 3507 (2000)

Effective masses of electrons and holes in SiGe

„Properties of SiGe and SiGe:C“
eds.: E. Kasper, and K. Lyutovich
emis Datareviews series 24, 144-148 (2000)

R. Neumann | G. Abstreiter

Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1-xN films

JOURNAL OF APPLIED PHYSICS 87 5 2357-2362 (2000)

Electron and hole storage in self-assembled InAs quantum dots

Physica E 7, 484-488 (2000)

Electronic inelastic light scattering in a periodic ?-doping GaAs multiple quantum well structure

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 727-728 (2001)

Epitaxial CaGe2 films on germanium

JOURNAL OF CRYSTAL GROWTH 212 1-2 148-154 (2000)

Evidence of Luttinger liquid behavior in GaAs/AlGaAs quantum wires

Physica E 6, 551-554 (2000)
Proc. of the 13th Int. Conf. on the EP2DS-13 held in Ottawa, Ontario, Canada 1-6 Aug 99

M. Rother | W. Wegscheider | R. A. Deutschmann | M. Bichler | G. Abstreiter

Explaining the dependences of the hole and electron mobilities in Si inversion layers

IEEE Trans. on Electron Dev. 47 (4), 718-724 (2000)

A. Pirovano | A. L. Lacaita | G. Zandler | R. Oberhuber

Femtosecond spectroscopy of large-momentum excitons in GaAs

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 182-183 (2001)

Fermi level pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5 art. no.-W11.82 (2000)

Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 353-3 787-790 (2000)

GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

APPLIED PHYSICS LETTERS 77 12 1858-1860 (2000)

C. R. Miskys | M. K. Kelly | O. Ambacher | G. Martinez-Criado | M. Stutzmann

Grazing incidence small-angle x-ray scattering study of buried and free-standing SiGe islands in a SiGe/Si superlattice

Phys. Rev. B 62, 7229-7236 (2000)

Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH 220 4 341-344 (2000)

Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations

Phys. Rev. 62, 11029-11037 (2000)

M. Arzberger | M. C. Amann

Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations

Physical Review B 62 (2000) 11029-11037.

M. Arzberger | M. C. Amann

Hysteresis and first-order phase transition in the two-dimensional electron gas

Physica E 6, 108-111 (2000)
Proc. of the 13th Int. Conf. on the EP2DS-13 held in Ottawa, Ontario, Canada 1-6 Aug 99

Hysteresis, spin transitions, and magnetic ordering in the fractional quantum Hall effect

Physica E 6, 18-21 (2000)
Proc. of the 13th Int. Conf. on the EP2DS-13 held in Ottawa, Ontario, Canada 1-6 Aug 99

Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

APPLIED PHYSICS LETTERS 77 13 2012-2014 (2000)

U. Karrer | O. Ambacher | M. Stutzmann

Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors

SOLID-STATE ELECTRONICS 44 8 1361-1365 (2000)

Influence of short range ordering on roughness of (AlGa)As interfaces studied with cross sectional scanning tunneling microscopy

Appl. Phys. Lett. 76, 3882 (2000)

In-plane gate single electron transistor fabricated by AFM lithography

J. Low Temp. Phys. 118, 333 (2000)

Interference laser crystallization of microcrystalline silicon using asymmetric beam intensities

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 650-653 (2000)

B. Rezek | C. E. Nebel | M. Stutzmann

Intra-valence band photocurrent measurements on Ge quantum dots in Si

Thin Solid Films 380, 180-182 (2000)

C. Miesner | K. Brunner | G. Abstreiter

Intra-valence band photocurrent spectroscopy of self-assembled Ge dots in Si

Appl. Phys. Lett. 76, 1027-1029 (2000)

C. Miesner | O. Röthig | K. Brunner | G. Abstreiter

Investigation of conductance fluctuations in quantum wires fabricated by cleaved edge overgrowth

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1027-1028 (2001)

Large transconductance oscillations in a single-well vertical Aharonov-Bohm interferometer

Phys. Rev. B 62, R10630 (2000)

V. Piazza | F. Beltram | W. Wegscheider | C. T. Liang | M. Pepper

Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

Appl. Phys. Lett. 76, 1944-1946 (2000)

L. Chu | A. Zrenner | G. Böhm | G. Abstreiter

Local laser induced rapid thermal oxidation of SOI substrates

Appl. Surface Science 168, 204-207 (2000)

M. Huber | R. A. Deutschmann | R. Neumann | K. Brunner | G. Abstreiter

Local photoconductivity correlation with granular structure of microcrystalline silicon thin films

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 315-318 (2000)

B. Rezek | C. E. Nebel | M. Stutzmann

Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers

Jpn. J. Appl. Phys. 39, 1727-1729 (2000)

Low-resistance InGa(Al)As tunnel junctions for long-wavelength vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters 39 (2000) 1727.

Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

Electronics Lett. 36, 87-88 (2000)

M. Arzberger | M. Lohner | G. Böhm | M. C. Amann

Magnetic resonance investigations of defects in (GaN)-N-14 and (GaN)-N-15

JOURNAL OF APPLIED PHYSICS 88 6 3249-3253 (2000)

Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy

Appl. Phys. Lett. 77, 4169-4171 (2000)

Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance

PHYSICAL REVIEW LETTERS 84 22 5188-5191 (2000)

S. T. B. Goennenwein | M. W. Bayerl | M. S. Brandt | M. Stutzmann

Mid-infrared photocurrent measurements on self-assembled Ge dots in Si

Physica E 7, 146-150 (2000)
Proc. of the 5th Int. Conf. on ITQW´99 in Bad Ischl, Austria 7-11 Sept. 99

C. Miesner | O. Röthig | K. Brunner | G. Abstreiter

Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures

Phys. Rev. B. 62, 7289 (2000)

C. Strahberger | P. Vogl

Monte Carlo Study of the Dynamic Breakdown Effects in HEMT's

IEEE Electron Device Letters 21 (4), 149-151 (2000)

Multi-exciton spectroscopy on a self-assembled InGaAs/GaAs quantum dot

Physica E 7, 354-358 (2000)

F. Findeis | A. Zrenner | M. Markmann | G. Böhm | G. Abstreiter

Negative differential resistance of a 2D electron gas in a 1D miniband

Physica E 7, 294-298 (2000)
Proc. of the 5th Int. Conf. on ITQW´99 in Bad Ischl, Austria 7-11 Sept. 99

R. A. Deutschmann | W. Wegscheider | M. Rother | M. Bichler | G. Abstreiter

Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 237-241 (2000)

S. T. B. Goennenwein | M. W. Bayerl | M. S. Brandt | M. Stutzmann

Norm-conserving pseudopotentials in the exact exchange Kohn-Sham formalism

J. Phys. Condensed Matter 12, 6783 (2000)

Novel nitride devices based on polarization fields

phys. stat. sol. (a) 179, 285 (2000)

Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

JOURNAL OF APPLIED PHYSICS 88 6 3470-3478 (2000)

Optical charging of self-assembled InAs quantum dots

in: Optical Properties of Semiconductor Nanostructures,
Eds.: M. L. Sadowski, M. Potemski, and M. Grynberg, Kluwer Academic Publishers, Dordrecht, page 365 (2000)

Optical properties of T-shaped quantum wire lasers

Phys. Stat. Sol. (a) 178, 227-231 (2000)

L. Sorba | G. Schedelbeck | W. Wegscheider | M. Bichler | G. Abstreiter

Optical spectroscopy on a single InGaAs/GaAs quantum dot in the few-exciton limit

Solid state communications 114, 227-230 (2000)

F. Findeis | A. Zrenner | G. Böhm | G. Abstreiter

Optical spectroscopy on a single quantum dot – single electron charging and Stark effect

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1161-1162 (2001)

M. Baier | F. Findeis | A. Zrenner | M. Bichler | G. Abstreiter

Optical spectroscopy on single quantum dots

in: Adv. in Sol. State Phys. Vol. 40, ed.: B. Kramer (Vieweg, Braunschweig/Wiesbaden) 561-576 (2000)

Optically induced charge storage and de-charging in InAs quantum dots

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1115-1116 (2001)

D. Heinrich | A. Zrenner | G. Böhm | G. Abstreiter

Optically-induced charge storage in self-assembled InAs quantum dots

Thin Solid Films 380, 192-194 (2000)

Persistent photocurrents in CVD diamond

DIAMOND AND RELATED MATERIALS 9 3-6 404-407 (2000)

C. E. Nebel | A. Waltenspiel | M. Stutzmann | M. Paul | L. Schafer

Phonon assisted biexciton generation in a single quantum dot

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1147-1148 (2001)

F. Findeis | A. Zrenner | G. Böhm | G. Abreiter

Phonon assisted biexciton generation in a single quantum dot

Phys. Rev. B 61, R10579 (2000)

F. Findeis | A. Zrenner | G. Böhm | G. Abstreiter

Phonon modes in SiGe: Raman spectroscopy

in: Properties of Silicon Germanium and SiGe:C,
eds.: E. Kasper and K. Lyutovich, EMIS Datareviews Series No. 24, 115 (2000)

K. Brunner

Photoconductivity study of Li doped homoepitaxially grown CVD diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 181 1 45-50 (2000)

Photocurrent and resonant Raman spectroscopy on self-assembled In(Ga)As/GaAs quantum dots

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1207-1208 (2001)

L. Chu | A. Zrenner | M. Arzberger | G. Böhm | G. Abstreiter

Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy

Appl. Phys. Lett. 77, 546-548 (2000)

Photoluminescence characterization of erbium doped Si1-yCy alloys grown by MBE

Thin solid films 369, 398-401 (2000)

M. Markmann | E. Neufeld | K. Brunner | G. Abstreiter | C. Buchal

Photon-induced Transport through Mesoscopic Structures using Nano-Ploughed Josephson Junctions

Proc. SPIE Vol. 3828, p. 194-199 (2000)

Polygermyne - A prototype system for layered germanium polymers

ADVANCED MATERIALS 12 17 1278-+ (2000)

G. Vogg | M. S. Brandt | M. Stutzmann

Quantum hall ferromagnetism in a two-dimensional electron system

Science 289, 2320 (2000)

Quantum wires as Luttinger liquids: experiment

Adv. in Sol. State Phys. Vol. 40, ed.: B. Kramer (Vieweg, Braunschweig/Wiesbaden) 97-116 (2000)

Raman spectroscopy of In(Ga)As/GaAs quantum dots

Appl. Phys. Lett. 77, 3944-3946 (2000)

L. Chu | A. Zrenner | M. Bichler | G. Böhm | G. Abstreiter

Resonant Raman spectroscopy of 3,4,9,10-perylene-tetracarboxylic-dianhydride epitaxial films

Phys. Rev. B 61, 13659-69 (2000)

Resonant Raman spectroscopy of organic semiconductors

phys. stat. sol. (b) 221, 541-4 (2000)

Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfaces

Thin Solid Films 380, 124-126 (2000)

R. Neumann | J. Zhu | K. Brunner | G. Abstreiter

Self-organized periodic arrays of SiGe wires and Ge islands on vicinal Si substrates

Physica E 7, 881-886 (2000)

Semiclassical origin of the 2D metallic state in high mobility Si-MOS and Si/SiGe structures

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 785-786 (2001)

Semiconductor nanostructures with short depletion length and stacked gates, patterned with an atomic force microscope

Physica E 7, 860-863 (2000)

T. M. Heinzel | R. Held | S. Lüscher | K. Ensslin | W. Wegscheider

Shape and size of buried SiGe islands

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 363-364 (2001)

Shifting a quantum wire through a disordered crystal: Observation of conductance fluctutions in real space

Phys. Rev. B 61, R13353 (2000)

Single crystals of the organic semiconductor perylene-tetracarboxylic-dianhydride studied by Raman spectroscopy

Phys. Rev. B 61, 14564-9 (2000)

Spatially resolved photocurrent measurements of microstructured a-Si : H solar cells

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 1109-1113 (2000)

C. Eisele | C. E. Nebel | M. Stutzmann

Spectroscopy of single self-assembled quantum dots

Journal of Luminescence 87-89, 35 (2000)

Spin effects in the magneto-drag

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 893-894 (2001)

Spin pairing in quantum dots with many electrons

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1059-1060 (2001)

S. Lüscher | T. Heinzel | K. Ensslin | W. Wegscheider | M. Bichler

Spin-dependent capacitance of silicon field-effect transistors

APPLIED PHYSICS LETTERS 76 11 1467-1469 (2000)

M. S. Brandt | R. T. Neuberger | M. Stutzmann

Spin-dependent exchange and correlation effects on the orbital magnetization of two-dimensional electron systems

Physica E 6, 731-734 (2000)
Proc. of the 13th Int. Conf. on the EP2DS-13 held in Ottawa, Ontario, Canada 1-6 Aug 99

Spin-dependent processes in amorphous and microcrystalline silicon: a survey

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 1-22 (2000)

M. Stutzmann | M. S. Brandt | M. W. Bayerl

Spin-flip inelastic light scattering of excitations from partially filled Landau level

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1003-1004 (2001)

Step bunching and correlated SiGe nanostructures on (113) Si

Thin Solid Films 369, 39-42 (2000)

K. Brunner | J. Zhu | G. Abstreiter | O. Kienzle | F. Ernst

STM-photocurrent-spectroscopy on single self-assembled InGaAs quantum dots

Physica E 7, 359-362 (2000)

E. Beham | A. Zrenner | G. Böhm

Strain-induced self-organized growth of nanostructures: From step bunching to ordering in quantum dot superlattices

J. Vac. Sci. Technol. B 18, 2187 (2000)

Structural and optical properties of Si-doped GaN

PHYSICAL REVIEW B 61 4 2812-2818 (2000)

A. Cremades | L. Gorgens | O. Ambacher | M. Stutzmann | F. Scholz

Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH 208 1-4 37-41 (2000)

Studies on impact excitation of Er in Si by hot carriers

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1443-1444 (2001)

Substrate influence on the ordering of organic submonolayers: A comparative study of PTCDA on Ag (110) and Ag(111) using HREELS

Appl. Surf. Sci 166, 363-9 (2000)

Thermal stability of p-type doped amorphous silicon suboxides

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 840-844 (2000)

R. Janssen | A. Janotta | M. Stutzmann

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

JOURNAL OF APPLIED PHYSICS 87 1 334-344 (2000)

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann
J. Appl. Phys. 87, 334 (2000)

Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

JOURNAL OF APPLIED PHYSICS 87 7 3375-3380 (2000)

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped AlGaN/GaN HETS

COMPOUND SEMICONDUCTORS 1999 166 493-497 (2000)

Ultrafast dynamics of holes in Si1-xGex/Si multiple quantum wells

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 611-612 (2001)

Ultrafast optical spectroscopy of large-momentum excitons in GaAs

Phys. Rev. Lett. 84, 5812-5815 (2000)

Vibrational properties of ultra-thin quasi-epitaxial PTCDA films on Ag(110)

Phys. Rev. B 61, 16933-47 (2000)

A nonlinear transport device with no intrinsic threshold

Microstructures 25, 269 (1999)

A semiconductor-based photonic memory cell

Science 283, 1292-1295 (1999)

S. Zimmermann | A. Wixforth | 1. J. P. Kotthaus | 1. W. Wegscheider | 2. M. Bichler2

Analysis of composition fluctuations in AlxGa1-xN

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 59 1-3 182-185 (1999)

Anomalous Kondo Effect in a Quantum Dot at Nonzero Bias

Phys. Rev. Lett. 83, 804 (1999)

F. Simmel | R. H. Blick | J. P. Kotthaus | W. Wegscheider | M. Bichler

Atomistic modeling of large-scale metal film growth fronts

Phys. Rev. B 59, R7856 (1999)

U. Hansen | P. Vogl | V. Fiorentini

Ballistic magnetotransport in a semiconductor microjunction with broken symmetry

Superlattices and Microstructures 25, 149 (1999)

A. M. Song | A. Lorke | J. P. Kotthaus | W. Wegscheider | M. Bichler

Capacitively detected magnetic resonance of defects in MOSFETs

PHYSICA B 274 1027-1030 (1999)

M. S. Brandt | R. Neuberger | M. Stutzmann

Capacitively-detected magnetic resonance in hydrogenated amorphous silicon solar cells

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10B L1172-L1174 (1999)

M. S. Brandt | R. T. Neuberger | M. W. Bayerl | M. Stutzmann

Carrier recombination at screw dislocations in n-type AlGaN layers

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 409-414 (1999)

Characteristics of surface and waveguide emitting SiGe:Er:O diodes

Journal of Luminescence 80, 321-327 (1999)

Characterization of AlGaN-Schottky diodes grown by plasma induced molecular beam epitaxy

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 1 163-167 (1999)

U. Karrer | A. Dobner | O. Ambacher | M. Stutzmann

Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy

JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 S279-S282 (1999)

Commensurate composite fermions in weak periodic electrosatic potentials: direct evidence of a periodic effective magnetic field

Phys. Rev. Lett. 83, 2620-2623 (1999)

Comparison of different substrates for a fully depleted soi-cmos-technology

Electron Technology, 32, ½, pp. 151-153 (1999)

T. Huttner | H. Wurzer | R. Mahnkopf | S. Pindl | G. Abstreiter

Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 38 9A 4962-4968 (1999)

Composition analysis using elastic recoil detection

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 679-682 (1999)

Compositional fluctuations in GaInN GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

APPLIED PHYSICS LETTERS 74 26 3981-3983 (1999)

N. Wieser | O. Ambacher | H. P. Felsl | L. Gorgens | M. Stutzmann

Correlated SiGe wires shaped by regular step bunches on miscut Si (113) substrates

Phys. Rev. B 60, 10935 (1999)

Correlation of photoconductivity and structure of microcrystalline silicon thin films with submicron resolution

APPLIED PHYSICS LETTERS 75 12 1742-1744 (1999)

B. Rezek | C. E. Nebel | M. Stutzmann

Coulomb blockade effects in a highly doped silicon quantum wire fabricated on novel molecular beam epitaxy grown material

Jpn. J. Appl. Phys. 38, 465-468 (1999)

CV and DLTS experiments in boron-doped diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 174 1 117-127 (1999)

C. E. Nebel | R. Zeisel | M. Stutzmann

Design and realization of a buried-heterostructure tunable-twin-guide laser diode with electrical blocking regions

IEEE Journal of Quantum Electronics 35 (1999) 794-802.

B. Schmidt | S. Illek | R. Gessner | M. C. Amann

Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range

M. Stutzmann, and M. Cardona
Phys. Rev. B 59, 1845 (1999)

Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range

PHYSICAL REVIEW B 59 3 1845-1849 (1999)

Direct observation of hole edge channels in a two dimensional electron gas

Phys. Rev. Lett. 83, 3033 (1999)

Direct observation of hole edge channels in a two dimensional electron gas

Phys. Rev. Lett. 83, 3033-3036 (1999)

Direct observation of the intersubband Bernstein modes: Many-body coupling with spin- and charge-density excitations

Phys. Rev. B 59, R12751 (1999)

Direct sub-µm lateral patterning of SOI by focused laser beam induced oxidation

Microelectronic Engineering 48, 367-370 (1999)

R. A. Deutschmann | M. Huber | R. Neumann | K. Brunner | G. Abstreiter

Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 807-811 (1999)

Dynamics of electronic ``bubble'' formation in solid hydrogen

J. Lumin. 83-84, 135-8 (1999)

F. Vigliotti | C. Jeannin | M. T. Portella-Oberli | M. Chergui | R. Scholz

Dynamics of electronic ``bubble'' formation in solid hydrogen: A classical model based on fluid dynamics

Phys. Rev. Lett. 83, 2355-8 (1999)

F. Vigliotti | E. Sarraf | M. Chergui | R. Scholz

Editorial

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 2 U3-U3 (1999)

Electrically detected magnetic resonance of two-dimensional electron gases in Si SiGe heterostructures

PHYSICAL REVIEW B 59 20 13242-13250 (1999)

Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe

Phys. Rev. B 59, 13242-13250 (1999)

Enhancement of erbium photoluminescence by substitutional C alloying of Si

Appl. Phys. Lett. 75, 2584-2586 (1999)

M. Markmann | E. Neufeld | A. Sticht | K. Brunner | G. Abstreiter

Exact exchange Kohn-Sham formalism applied to semiconductors

Phys. Rev. B 59, 10031 (1999)

M. Städele | M. Moukara | J. A. Majewski | P. Vogl | A. Görling

Excitonic transitions in cubic AlGaN

MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS 164 419-424 (1999)

Experimental and theoretical studies of near-breakdown phenomena in heterostructure FET

in: Proceedings GaAs-99, München (1999), pp 88

Explaining the dependencies of the hole and electron mobilities in Si MOSFET's inversion layers

IEDM Tech. Dig. 1999, 527 (1999)

A. Pirovano | A. L. Lacaita | G. Zandler | R. Oberhuber

Fabricating tunable semiconductor devices with an atomic force microscope

Appl. Phys. Lett 75, 1134 (1999)

R. Held | S. Lüscher | T. Heinzl | K. Ensslin | W. Wegscheider

First-order phase transitions in a quantum Hall ferromagnet

Nature 402, 638 (1999)

Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures

Appl. Phys. Lett. 74, 2002-4 (1999)

From CaSi2 to siloxene: epitaxial silicide and sheet polymer films on silicon

JOURNAL OF CRYSTAL GROWTH 203 4 570-581 (1999)

G. Vogg | M. S. Brandt | M. Stutzmann | M. Albrecht

High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

APPLIED PHYSICS LETTERS 75 23 3653-3655 (1999)

High-resolution x-ray diffraction on self-organized step bunches of Si1-xGex grown on (113)-oriented Si

J. Phys. D: Appl. Phys. 32, A71-A74 (1999)

Impact of piezo- and pyroelectric fields onto transport properties and device performance in III-nitride heterostructure devices

in: Proc. of the 24th Int. Conf. on the Physics of Semiconductors, 1998, Jerusalem, Israel, Ed. D. Gershoni, World Scientific (1999), pp 1315

G. Zandler | R. Oberhuber | F. Compagnone | P. Vogl

Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

Appl. Phys. Lett. 75, 3968-3970 (1999)

M. Arzberger | U. Käsberger | G. Böhm | G. Abstreiter

Influence of growth conditions on the photoluminescence of self-assambled InAs/GaAs quantum dots

J. of Appl. Phys. 85, 2355-2362 (1999)

L. Chu | M. Arzberger | G. Böhm | G. Abstreiter

Influence of the Chemical Structure on the Luminescence Properties of Organic Dye Molecules

Mat. Res. Soc. Proc., Vol. 598 (1999), BB3.72.1

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

Appl. Phys. Lett. 75, 2452-2454 (1999)

Interaction of scarred wavefunctions and spontaneous spin polarization in quantum dot

Microelectronic Engineering 47, 119 (1999)

M. Stopa

Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 3A L217-L219 (1999)

Lateral ordering of coherent Ge islands on Si(001) studied by triple-crystal grazing incidence diffraction

Appl. Phys. Lett. 74, 2978-2980 (1999)

I. Kegel | T. H. Metzger | J. Peisl | P. Schittenhelm | G. Abstreiter

Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron system

JETP Letters 69, 603-609 (1999)

Magnetization of the fractional quantum hall states

Phys. Rev. Lett. 82, 819-822 (1999)

Magneto-optical studies of GaAs/A1GaAs T-shaped quantum wire structures fabricated by cleaved edge overgrowth

Journal of Crystal Growth 201/202, 805- 09 (1999)

L. Sorba* | 1. L. Sorba* | G. Schedelbeck | G. B. M. Bichler

Magnetotransport properties of arrays of cross-shaped antidots

Phys. Rev. B 60, 8845 (1999)

Mechanical nanomanipulation of single strain-induced semiconductor quantum dots

Appl. Phys. Lett. 75, 358-360 (1999)

Microwave Spectroscopy of a Single Quantum Dot in the few Electron Limit

Electrochemical Soc. Proceedings Vol. 99-22, p. 406-12 (1999)

MOCVD-epitaxy on free-standing HVPE-GaN substrates

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 1 443-446 (1999)

C. R. Miskys | M. K. Kelly | O. Ambacher | M. Stutzmann

Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMT´s

Physica B 272, 558-661 (1999)

New type of electron nuclear-spin interaction from resistively detected NMR in the fractional quantum hall effect regime

Phys. Rev. Lett. 82, 4070-4073 (1999)

Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 4 art. no.-G8.4 (1999)

Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy

Eastman, T. J. Eustis, R. Dimitrov, M. Stutzmann, and W. Rieger
MRS Internet. J. Nitride Semicond. Res. 4S1, G8.4 (1999)

Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

Appl. Phys. Lett. 75, 3599-3601 (1999)

L. Chu | A. Zrenner | G. Böhm | G. Abstreiter

ODMR of bound excitons in Mg-doped GaN

PHYSICA B 274 120-123 (1999)

Optical and electrical properties of doped amorphous silicon suboxides

PHYSICAL REVIEW B 60 19 13561-13572 (1999)

R. Janssen | A. Janotta | D. Dimova-Malinovska | M. Stutzmann

Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes

PHYSICA B 274 811-814 (1999)

Optical and transport properties of low-dimensional structures fabricated by cleaved edge overgrowth

Microelectronic Engineering 47, 215-219 (1999)

W. Wegscheider | M. Rother | G. Schedelbeck | M. Bichler | G. Abstreiter

Optical properties of low-dimensional structures fabricated by cleaved edge overgrowth

Proc. of ICPS 24
World Scientific p. 172 ff. (1999)

W. Wegscheider | G. Schedelbeck | M. Bichler | G. Abstreiter

Optically induced persistent charge storage effects in self assembled InAs quantum dots

Jpn. J. Appl. Phys. 38, 531-534 (1999)

Optimization of erbium-doped light-emitting diodes by p-type counterdoping

Appl. Phys. Lett. 75, 647-649 (1999)

E. Neufeld | M. Markmann | K. Brunner | G. Abstreiter

Passivation of boron in diamond by deuterium

APPLIED PHYSICS LETTERS 74 13 1875-1876 (1999)

R. Zeisel | C. E. Nebel | M. Stutzmann

Pauli-blocking imaging of single strain-induced semiconductor quantum dots

Appl. Phys. Lett. 74, 3200-3202 (1999)

Photocapacitance study of boron-doped chemical-vapor-deposited diamond

PHYSICAL REVIEW B 60 4 2476-2479 (1999)

R. Zeisel | C. E. Nebel | M. Stutzmann | E. Gheeraert | A. Deneuville

Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots

Appl. Phys. Lett. 75, 2247-2249 (1999)

L. Chu | M. Arzberger | A. Zrenner | G. Böhm | G. Abstreiter

Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10A L1083-L1084 (1999)

B. Rezek | C. E. Nebel | M. Stutzmann

Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon

MONATSHEFTE FUR CHEMIE 130 1 79-87 (1999)

G. Vogg | N. Zamanzadeh-Hanebuth | M. S. Brandt | M. Stutzmann | M. Albrecht

Pyroelectronics: Novel device concepts based on nitride interfaces

J. Vac. Sci. Technol. B 17, 1617-1621 (1999)

G. Zandler | J. A. Majewski | P. Vogl

Quasiharmonic versus exact surface free energies of al: A systematic study employing a classical interatomic potential

Phys. Rev. B 60, 5055 (1999)

U. Hansen | P. Vogl | V. Fiorentini

Reaction rates for ionized physical vapor deposition modeling from molecular-dynamics calculations: Effect of surface roughness

Phys. Rev. B 60, 14417 (1999)

U. Hansen | A. Kersch

Reflectance difference spectroscopy characterization of AlxGa1-xN-compound layers

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 215-220 (1999)

Regular step bunching and ordering of Ge Islands on vicinal Si surfaces

Proc. of ICPS 24, Ed. D. Gershoni
World Scientific, p. 61 ff (1999)

K. Brunner | J. Zhu | G. Abstreiter | O. Kienzle | F. Ernst

Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 381-389 (1999)

Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice

Appl. Phys.74 (15), 2179-2181 (1999)

Space-charge spectroscopy of self-assembled Ge-rich dots on Si grown by MBE

Phys. Rev. B, 60 (3), 1792-1798 (1999)

K. Schmalz | I. N. Yassievich | P. Schittenhelm | G. Abstreiter

Spatially resolved spectroscopy of single and coupled quantum dots

Jpn. J. Appl. Phys. 38, 449-454 (1999)

Spatially resolved spectroscopy on single self-assembled quantum dots

Journal of Electronic Materials 28, 542 (1999)

Step characterization on vicinal Si surfaces by reflection high-energy electron diffraction at arbitrary azimuths

Applied Surface Science 137, 191-196 (1999)

J. Zhu | K. Brunner | G. Abstreiter

Strain relaxation of facetted Ge islands on Si (113)

Appl. Phys. Lett. 75, 2395-2397 (1999)

J. Zhu | C. Miesner | K. Brunner | G. Abstreiter

The origin of red luminescence from Mg-doped GaN

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 547-550 (1999)

Theoretical insights into CoSi2/CaF2 tunnelig diodes

Physica B 272 (1999) 160-162

C. Strahberger | P. Vogl

Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP

Superlattices and Microstructures 25, 351-5 (1999)

J. M. Jancu | F. Beltram | R. Scholz | A. D. Carlo

Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition

JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 1 42-45 (1999)

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

JOURNAL OF APPLIED PHYSICS 85 6 3222-3233 (1999)

Ultrafast coherent vibronic dynamics of F and F_H(OH-) centers in KBr

in: Proceedings of XIV International Symposium on Electron-Phonon Dynamics and Jahn-Teller Effect, Erice, 7-13 July 1998 (World Scientific, Singapore 1999), p. 132-143. (1999)

R. Scholz | V. Dierolf | F. Bassani

Untitled

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 171 2 U3-U3 (1999)

Vibrational anti-crossing in siloxene

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 215 1 409-412 (1999)

M. S. Brandt | L. Hoppel | N. Zamanzadeh-Hanebuth | G. Vogg | M. Stutzmann

(110) oriented quantum wells and modulation-doped heterostructures for cleaved edge overgrowth

Physica E 2, 131-136 (1998)

W. Wegscheider | G. Schedelbeck | R. Neumann | M. Bichler

A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs

Semicond. Science Technol. 13, 858 - 863 (1998)

Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 37 3A 745-752 (1998)

Accurate band gaps with density functional theory

Bull. Am. Phys. Soc. 43, 169 (1998)

J. A. Majewski

Amorphous silicon suboxide light-emitting diodes

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 1151-1155 (1998)

R. Janssen | U. Karrer | D. Dimova-Malinovska | M. Stutzmann

Analysis of composition fluctuations on an atomic scale in Al0.25Ga0.75N by high-resolution transmission electron microscopy

APPLIED PHYSICS LETTERS 73 7 930-932 (1998)

B. Neubauer | A. Rosenauer | D. Gerthsen | O. Ambacher | M. Stutzmann

a-SiOx : H thin film light emitting devices for Si-based optoelectronics

JOURNAL OF LUMINESCENCE 80 1-4 405-409 (1998)

Atomically precise quantum dots fabricated by twofold cleaved edge overgrowth: From artifical atoms to molecules

Physica E 3 103-111 (1998)

W. Wegscheider | G. Schedelbeck | M. Bichler | G. Abstreiter

Band gaps and light emission in Si/Ge atomic layer structures

to be publ. in Semiconductors and Semimetals, Vol 49, Light emission in Silicon. Ed.: D. J. Lockwood, Academic Press 37-71 (1998).

Calculation of Landau levels in semiconductor quantum dots in a high magnetic field and at a high optical excitation

Phys. Rev. B 58, 6744 (1998)

Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 168 2 R7-R8 (1998)

Carrier trapping and release in CVD-diamond rims

DIAMOND AND RELATED MATERIALS 7 2-5 556-559 (1998)

C. E. Nebel | M. Stutzmann | F. Lacher | P. Koidl | R. Zachai

Cellular automata studies of vertical silicon devices

VLSI DESIGN 8 (1-4), 111 - 115 (1998)

M. Saraniti | G. Zandler | G. Formicone | S. Goodnick

Cellular automaton study of time-dynamics of avalanche breakdown in IMPATT diodes

VLSI DESIGN 8 (1-4), 93 - 98 (1998)

Characterization of laser patterned a-Si : H thin films by combined AFM local current measurements

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 170 1 R1-R2 (1998)

Chemical beam epitaxy of integrated 1.55 µm lasers on exact and misoriented (1 0 0)-InP substrates

Journal of Crystal Growth 188, 275-280 (1998)

Coherent THz-plasmons in AlGaAs/GaAs heterostructures

Technical Digest., International Quantum Electronics Conference, Conference Edition, 1998 Technical Digest Series, Vol.7 (IEEE Cat. No.98CH36236), Opt. Soc. America, Washington, DC, USA, 1998, p.151-2

W. Fischler | R. Bratschitsch | R. A. Höpfel | G. Zandler | K. Unterrainer

Composite fermions in magnetic focusing and commensurability experiments

Physica B 249-251, 15-22 (1998)
Proc. of the 12th Int. Conf on Electronic Properties of Two-Dimensional Systems, Tokoy, Japan, Sept. 1997

Conductive microcrystalline-Si films produced by laser processing

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 916-920 (1998)

B. Dahlheimer | U. Karrer | C. E. Nebel | M. Stutzmann

dc Transport of Composite Fermions in Weak Periodic Potentials

Phys. Rev. Lett. 80 (20), 4538-4541 (1998)

J. H. Smet | K. V. Klitzing | D. Weiss | W. Wegscheider

Deep level transient spectroscopy of synthetic type IIb diamond

JOURNAL OF APPLIED PHYSICS 84 11 6105-6108 (1998)

R. Zeisel | C. E. Nebel | M. Stutzmann

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS 77 4 1013-1025 (1998)

Design and Fabrication of Double Modulation Doped InAlAs/InGaAs/InAs Heterojunction FET’s for High Speed and Millimeter-wave Applications

IEEE Electron Devices, Vol. 45 (1), 21-30 (1998)

Dichtefunktionaltheorie mit exaktem Austausch: Ergebnisse fuer Halbleitern

Verhandl. DPG(VI) 33, 762 (1998)

M. Staedele | M. Moukara | A. Goerling | P. Vogl

Die Entdeckung des fraktionalen Quanten-Hall-Effekts

Physikalische Blätter 54, 1098-1102 (1998)

Direct patterning of single electron tunneling transistors by high resolution electron beam lithogaphy on highly doped molecular beam epitaxy grown silicon films

R. Neumann, K. Brunner, G. Abstreiter
J. Vac. Sci. Technol. B 16 (6), 3804 (1998)

Direct writing of in-plane-gated nanostructures by focused laser beam-induced doping

Physica E 2, 441-448 (1998)

P. Baumgartner | W. Wegscheider | G. Groos | G. Abstreiter

Effects of a lateral electric field on excitons in a single quantum dot

Physica E 2, 623-626 (1998)

W. Heller | U. Bockelmann | G. Abstreiter

Effects of substrate orientation on the valence band splittings and valence band offsets in GaN and AlN films

Mat.Res.Soc.Symp.Proc. Vol. 482, 917 (1998)

J. A. Majewski | M. Staedele

Electrical and structural properties of AlGaN: a comparison with CVD diamond

DIAMOND AND RELATED MATERIALS 7 2-5 123-128 (1998)

M. Stutzmann | O. Ambacher | H. Angerer | C. E. Nebel | E. Rohrer

Electrical Detection of Optically-Induced Charge Storage in Self-Assembled InAs Quantum Dots

Appl. Phys. Lett. 73, 2618-2620 (1998)

Electrically detected magnetic resonance of a-Si : H at low magnetic fields: the influence of hydrogen on the dangling bond resonance

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 343-347 (1998)

M. S. Brandt | M. W. Bayerl | M. Stutzmann | C. F. O. Graeff

Electric-field effects on excitons in quantum dots

Physical Review B, Vol. 57 (11), 6270-6273 (1998)

W. Heller | U. Bockelmann | G. Abstreiter

Electroluminescence studies of stacked self-assembled InAs/GaAs-quantum dots embedded in a Bragg resonator

Physica E 2, 594-598 (1998)

M. Arzberger | M. Hauser | G. Böhm | A. Zrenner | G. Abstreiter

Electroluminescent properties of a-SiOx : H alloys

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 1160-1163 (1998)

Electrostatic exciton traps

Phys. stat. sol. (a) 166, R5 (1998).

T. Huber | A. Zrenner | W. Wegscheider | M. Bichler

Empirical spds* tight-binding model for cubic semiconductors: General method and material parameters

Phys. Rev. B 57, 6493-507 (1998)

J. M. Jancu | R. Scholz | F. Beltram | F. Bassani

Erbium doped Si/SiGe waveguide diodes: Optical and electrical characterization

Mat. Res. Soc. Symp. Proc. 533, 139-144 (1998)

E. Neufeld | A. Luigart | A. Sticht | K. Brunner | G. Abstreiter

Exact Kohn-Sham exchange potential and gap problem in semiconductors

In: Conference Proceedings Vol. 61 Advances in Computational Materials Science-II, (SIF, Bologna, 1998), pp 59

M. Staedele | J. A. Majewski | P. Vogl | A. Goerling

Far-infrared and transport properties of antidot arrays with broken symmetry

Physica B 249-251, 312-316 (1998)
Proc. of the 12th Int. Conf on Electronic Properties of Two-Dimensional Systems, Tokoy, Japan, Sept. 1997

Fluctuations in quantum dot charging and polarization

Bull. Am. Phys. Soc. 43, 925 (1998)

M. Stopa | J. A. Majewski

Fluctuations in quantum dot charging energy

Physica B, vol. 249-251, 228-232 (1998)

M. Stopa

Fluctuations in quantum dot charging energy and polarization

Semiconductor Science and Technology, vol. 13, A55-A58 (1998)

M. Stopa

Freely suspended two-dimensional electron gases

Physica B 249-251, 784-787 (1998)
Proc. of the 12th Int. Conf on Electronic Properties of Two-Dimensional Systems, Tokoy, Japan, Sept. 1997

R. H. Blick | M. L. Roukes | W. Wegscheider | M. Bichler

Growth and characterization of strained Si1-xGex multi-quantum-well waveguide photodetectors on (1 1 0) Si for 1.3 and 1.55 µm

Physica E 2, 753-757 (1998)

Highly regular self-organization of step bunches during growth of SiGe on Si (113)

Appl. Phys. Lett. Vol 73 (11) 1535-1537 (1998)

High-resolution thermal processing of semiconductors using pulsed-laser interference patterning

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 651-657 (1998)

M. K. Kelly | J. Rogg | C. E. Nebel | M. Stutzmann | S. Katai

Hydrogen passivation of silicon surfaces: A classical molecular dynamics study

Phys. Rev. B, 13295 (1998)

U. Hansen | P. Vogl

Hysteresis and Spin Transitions in the Fractional Quantum Hall Effect

Phys. Rev. Lett. 81, 2522-2525 (1998)

III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications

in: Advances in Computational Materials Science - II 61, 71-75 (1998), Ed. by V. Fiorentini and F. Meloni, Società Italiana di Fisica, Editrice Compositori, Bologna, Italy (1998)

G. Zandler | J. A. Majewski | M. Städele | P. Vogl | F. Compagnone

III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications

in: Conference Proceedings Vol. 61 Advances in Computational Materials Science-II, (SIF, Bologna, 1998), pp 71

G. Zandler | J. A. Majewski | M. Staedele | P. Vogl | F. Compagnone

In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope

Appl. Phys. Lett. 73, (2) 262 - 264 (1998)

Laser-interference crystallization of amorphous silicon: Applications and properties

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 667-674 (1998)

Lateral ordering of self-assembled Ge islands

Thin Solid Films 336, 252-255 (1998)

J. H. Zhu | K. Brunner | G. Abstreiter | O. Kienzle | F. Ernst

Luminescence from erbium- and oxygen-doped SiGe grown by molecular beam epitaxy

Thin Solid Films 321, 219-222 (1998)

Magnetization of the Fractional Quantum Hall States

Phys. Rev. Lett. 82, 819-822 (1998)

MBE-Growth of Metamorphic InGaAlAs Buffers

Inst. of Physics Conference Series 156, 49-52 (1998)

Minority carrier diffusion length in AlGaN: A combined electron beam induced current and transmission microscopy study

SOLID STATE PHENOMENA 63-4 139-146 (1998)

Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs

in: Proc. of the 28th European Solid State Device Research Conference, 8-10 Sept. 1998, Bordeaux, France, Eds.: A. Touboul, Y. Danto, J.-P. Klein and H. Grünbacher, Edition Frontieres, 75004 Paris - France, (1998), pp. 524 - 527

R. Oberhuber | G. Zandler | P. Vogl

Mobilty of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors

Appl. Phys. Lett. 73(6), 818-820 (1998)

R. Oberhuber | G. Zandler | P. Vogl

Molecular beam epitaxy growth and thermal stability of Si1-xGex layers on extremely thin silicon-on-insulator substrates

Thin Solid Films 321, 245-250 (1998)

K. Brunner | H. Dobler | G. Abstreiter | H. Schäfer | B. Lustig

Negative electron affinity of cesiated p-GaN(0001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 4 2224-2228 (1998)

New Resistance Maxima in the Fractional Quantum Hall Effect Regime

Phys. Rev. Lett. 81, 2526-2529 (1998)

Nitrogen effusion and self-diffusion in (GaN)-N-14/(GaN)-N-15 isotope heterostructures

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 37 5A 2416-2421 (1998)

O. Ambacher | F. Freudenberg | R. Dimitrov | H. Angerer | M. Stutzmann

Nonlinear Electron Transport in an Asymetric Microjunction: A Ballistic Rectifier

Phys. Rev. Lett. 80 (17), 3831-3834 (1998)

Norm-conserving pseudopotentials in the exact exchange Kohn-Sham formalism

in: Proceedings of the 24th Int. Conf. on the Physics of Semicond., 1998, Jerusalem, Israel, World Scientific 1998

M. Moukara | M. Städele | J. A. Majewski | P. Vogl | A. Görling

Oblique roughness replication in strained SiGe/Si multilayers

Phys. Rev. B 57 (19), 12435-12442 (1998)

Observation of ?105? faceted Ge pyramids inclined towards vicinal Si(001) surfaces

Appl Phys. Lett. 72 (4), 424-426 (1998)

J. H. Zhu | K. Brunner | G. Abstreiter

Observation of step bunches in units of 4 ML on vicinal Si(113) surfaces

Appl Phys. Lett. 73 (17), 2438-2440 (1998)

J. H. Zhu | K. Brunner | G. Abstreiter

On the environment of optically active Er in Si-electroluminescence divices

J. Stimmer
Appl. Phys. Lett. 72 (7), 809-811 (1998)

S. Lanzerstorfer | L. Palmetshofer | W. Jantsch

Optische Eigenschaften von Quantenpunkten und mögliche Anwendungen

PTB-Bericht, Techn. Univ. Braunschweig, 3-17 (1998)

Perspektiven fuer GaN-basierende Heterostruktur- Bauelemente

Verhandl. DPG (VI) 33, 715 (1998)

F. Compagnone | G. Zandler | J. A. Majewski | M. Staedele | P. Vogl

Photo- and electroluminescence characterization of erbium doped SiGe

H. Holzbrecher, H. Bay
J. Vac. Sci. Technol. B 16(5), 2615 (1998)

E. Neufeld | A. Sticht | K. Brunner | H. Riedl | G. Abstreiter

Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond

DIAMOND AND RELATED MATERIALS 7 6 879-883 (1998)

Polarization and band offsets of stacking faults in AlN and GaN

MRS Internet J. Nitride Semicond. Res. 3, 21 (1998)

J. A. Majewski | P. Vogl

Polarization dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

Superlattices & Microstructures 23, 61-66 (1998)

Proceedings of the Seventeenth International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology, Budapest, Hungary August 25-29, 1997

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 VII-VII (1998)

S. Kugler | M. Stutzmann

Quantitative transmission electron microscopy investigation of the relaxation by misfit dislocations confined at the interface of GaN/Al2O3(0001)

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 37 1 84-89 (1998)

Quantum dots fabricated by twofold cleaved edge overgrowth

Physica E 2, 1-7 (1998)

Raman scattering in annealed isotopic (70Ge)n(74Ge)m superlattices

Physica E 2 291-294 (1998)

E. Silveira | W. Dondl | G. Abstreiter | E. E. Haller

Realization and characterization of Si nanostructures

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 687-693 (1998)

G. Groos | M. Stutzmann

Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance

PHYSICAL REVIEW B 58 8 4892-4902 (1998)

Room temperature 1.54µm electroluminescende from erbium deped Si/SiGe waveguides

Appl. Phys. Lett. 73, 3061-3063 (1998)

E. Neufeld | A. Sticht | A. Luitgart | K. Brunner | G. Abstreiter

Self-Assembled Ge-Dots: Growth, Characterization, Ordering and Applications

J. Vac.Sci. Technol. B 16 (3) 1575-1581 (1998)

Shape, size, strain and correlations in quantum dot systems studied by grazing incidence X-ray scattering methods

Thin solid Films 336, 1-8 (1998)

Si-nanostructures made by laser-annealing

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 938-942 (1998)

G. Groos | M. Stutzmann

Size distribution of coherently strained InAs quantum dots

J. Appl. Phys. 84, 4268-4272 (1998)

K. H. Schmidt | G. Medeiros-Ribeiro | U. Kunze | G. Abstreiter | M. Petroff

Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements

APPLIED PHYSICS LETTERS 72 19 2400-2402 (1998)

Spatially resolved exciton trapping in a voltage- controlled lateral superlattice

Appl. Phys. Lett. 73, 154-156 (1998)

Spatially resolved magneto-optics on confined systems

G. Abstreiter
Physica B 256-258, 300-307 (1998)

Spatially resolved optical spectroscopy on natural quantum dots

Applied Surface Science 123/124, 356-365 (1998)

Spectroscopy of excitonic Zeeman levels in single quantum dots

Physica E 2, 609-613 (1998)

A. Schaller | A. Zrenner | G. Abstreiter | G. Böhm

Spin splitting in GaAs quantum wire structures

PHYSICA E 2 1-4 929-932 (1998)

Spin-dependent processes and Mg-acceptors in GaN single quantum well diodes and p-type GaN films

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 210 2 389-393 (1998)

M. W. Bayerl | M. S. Brandt | H. Angerer | O. Ambacher | M. Stutzmann

Stability and band offsets of AlN/GaN heterostructures: Impact on device performance

Semicond. Science Technol. 13 (8A), A90 - A92 (1998)

Stability and band offsets of AlN/GaN heterostructures: Impact on device performance

Semicond. Sci. Technol. 13, A90 (1998)

Structural characterization of self-assembled Ge dot multilayers by x-ray diffraction and reflectivity methods

Physica E, 2. 789-793 (1998)

Subband structure and mobilty of two-dimensional holes in strained Si/SiGe MOSFETs

Phys. Rev. B 58 (15), 9941-9948 (1998)

R. Oberhuber | G. Zandler | P. Vogl

Superexchange in porphyrin-quinone complexes

J. Lumin. 76-77, 482-5 (1998)

M. Schreiber | C. Fuchs | R. Scholz

Superlattice calculation in an empirical spds* tight-binding model

in: Tight-Binding Approach to Computational Materials Science, ed. by E.A. Turchi, A. Gonis, L. Colombo, Mat. Res. Soc. Symp. Proc. 491, 383-8 (1998)

R. Scholz | J. M. Jancu | F. Bassani

The influence of the Al-content on the optical gain in AlGaN heterostructures

JOURNAL OF CRYSTAL GROWTH 189 692-695 (1998)

J. Holst | L. Eckey | A. Hoffmann | O. Ambacher | M. Stutzmann

The Origin of Various PL-Bands in Si/Ge Strain-Symmetrized Superlattices

Microelectronic Engineering 43, 165-170 (1998)

J. Olajos | J. Nilson | M. Gail | G. Abstreiter

Theory of internal polarization fields in GaN and AlN interfaces and stacking fault

in: Proceedings of the 24th Int. Conf. on the Physics of Semicond., 1998, Jerusalem, Israel, World Scientific, 1998

J. A. Majewski | P. Vogl

Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire

PHYSICAL REVIEW B 57 12 7066-7070 (1998)

Time-resolved spectroscopy of single quantum dots

Physica E 2, 588-593 (1998)

P. Roussignol | W. Heller | A. Filoramo | U. Bockelmann

Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with step bunches

Appl. Phys. Lett. 73 (59), 620-622 (1998)

J. H. Zhu | K. Brunner | G. Abstreiter

Ultrafast coherent vibronic dynamics in color centers

J. Lumin. 76-77, 48-51 (1998)

M. Schreiber | R. Scholz

Ultrafast electron transfer of betaine-30

J. Lumin. 76-77, 404-7 (1998)

R. Scholz | M. Darwish | M. Schreiber

Vibrational properties of siloxene: isotope substitution studies

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 503-506 (1998)

N. Zamanzadeh-Hanebuth | M. S. Brandt | M. Stutzmann

Voltage-controlled trapping of excitons and „storage of light“ in lateral supelattices

M. Bichler, and W. Wegscheider
Physica E 2, 35 (1998)

Von künstlichen Atomen zu Molekülen

Physikalische Blätter 54 1115-1117 (1998)

Von künstlichen Atomen zu Molekülen

TUM-Mitteilungen 4, 26 (1998).

X-ray reflectivity investigations of the interface morphology on strained SiGe/Si multilayers

Semicond. Sci. Technol. 13, 590-598 (1998)

0.15 µm double modulation doped InAs-inserted-channel MODFETs: Gate recess for optimum RF performances

Electronics Lett. Vol. 33 (6), 532-533 (1997)

2 S/mm Transconductance InAs-Inserted-Channel Modulation Doped Field Effect Transistors with a Very Close Gate-to-Channel Separation of 14.5 nm

Jpn. J. Appl. Phys. Vol. 36 (Part 2, No. 4B), L470-L472 (1997)

A Monte Carlo transport model based on spherical harmonics expansion of the valence bands

in Simulation of Semiconductor Devices and Processes, Vol. 6, Eds.: H. Ryssel and P. Pichler (Springer, Wien, 1997), p. 396-399

H. Kosina | M. Harrer | P. Vogl | S. Selberherr

AlGaN-based Bragg reflectors

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2 22 art. no.-22 (1997)

AlGaN-based Bragg reflectors

K. Wilmers, W. Richter, and M. Stutzmann
MRS Internet J. of Nitride Semicond. Res. 2, 203 (1997)

Analysis of quantum-transport phenomena in mesoscopic systems: A Monte Carlo approach

Phys. Stat. Solidi (b) 204, 339-342 (1997)

S. Ragazzi | A. Di Carlo | P. Lugli | F. Rossi

Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth

Phys. Rev. Letters 79 (10), 1917-1920 (1997)

W. Wegscheider | G. Schedelbeck | G. Abstreiter | M. Rother | M. Bichler

CBE of 1.55µm (GaIn)(AsP) lasers for monolithic integration

Journal of Crystal Growth 175/176, 1200-1204 (1997)

A. Nutsch | B. Torabi | H. Kratzer | G. Tränkle | G. Weimann

Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy

JOURNAL OF APPLIED PHYSICS 81 1 234-237 (1997)

C. F. O. Graeff | C. E. Nebel | M. Stutzmann | A. Floter | R. Zachai

Classical and quantum magneto-transport of excitons in two-dimensional systems

12th Int. Conf. on The Application of High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany, July 28-Aug.2, 1996.Vol 2, 729-732 (1997)

P. I. Arseyev | A. B. Dzyubenko | G. E. W. Bauer

Coherent THz Plasmons in GaAs: Transition from pure plasmons to coupled plasmon-phonon modes

Phys. Stat. Sol. (b) 204, 64 - 66 (1997)

R. Bratschitsch | W. Fischler | R. A. Höpfel | G. Zandler

Coherent X-ray scattering phenomenon in highly disordered epitaxial AlN films

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 162 2 529-535 (1997)

Comment on 'Resonantly excited photoluminescence spectra of porous silicon' - Reply

PHYSICAL REVIEW B 55 15 10117-10118 (1997)

M. Rosenbauer | M. Stutzmann | S. Finkbeiner | J. Weber | E. Bustarret

Conduction band Mixing in T- and V-shaped quantum wires

Phys. Rev. B 56, 1668 (1997)

S. Pescetelli | A. Di Carlo | P. Lugli

Conduction Band Mixing in T- and V-shaped quantum wires

Phys. Rev. B 56, 1668 (1997)

S. Pescetelli | A. Di Carlo | P. Lugli

Coupled Quantum Dots Fabricated by Cleaved Edge Overgrowth: From Artifical Atoms to Molecules

Science Vol 278, 1792-1795 (1997)

G. Schedelbeck | W. Wegscheider | M. Bichler | G. Abstreiter

Defect-free strain relaxation in locally MBE-grown SiGe-heterostructures

Thin Solid Films 294, 27-32 (1997)
(E-MRS Spring Meeting, Strasbourg, France, June 4-7, 1996)

Determination of optical constants for the design of AlGaN-based Bragg reflectors

K. Wilmers, W. Richter, and M. Stutzmann
MRS Internet. J. of Nitride Semicond. Res. 2, 22 (1997)

Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films

APPLIED PHYSICS LETTERS 71 11 1504-1506 (1997)

Direct and indirect magnetoexcitons in InGaAs/GaAs coupled quantum wells: experiment and theory

12th Int. Conf., High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany, July 28-Aug.2, 1996. Vol 2, 689-692 (1997)

Editorial note

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 199 1 3-3 (1997)

Electrically detected magnetic resonance (EDMR) of defects in GaN light emitting diodes

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 159 2 R5-R6 (1997)

M. W. Bayerl | M. S. Brandt | M. Stutzmann

Electrically detected magnetic resonance at different microwave frequencies

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 963-968 (1997)

M. S. Brandt | M. W. Bayerl | N. M. Reinacher | T. Wimbauer | M. Stutzmann

Electrically detected magnetic resonance in undoped polyacetylene and polyaniline

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 162 2 713-721 (1997)

C. F. O. Graeff | M. S. Brandt | R. M. Faria | G. Leising

Electronic and optical properties of magnetoexcitons in quantum-well wires

12th Int. Conf., High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany 29. July-2. August 1996, Vol 2, 545-548 (1997)

M. Graf | A. B. Dzyubenko

Electronic properties of CVD and synthetic diamond

PHYSICAL REVIEW B 55 15 9786-9791 (1997)

C. E. Nebel | J. Munz | M. Stutzmann | R. Zachai | H. Guttler

Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN

Mat. Res. Soc. Symp. Proc. 449, 917-922 (1997)

J. Majewski | M. Städele | P. Vogl

Electronic transport in crystalline siloxene

SOLID STATE COMMUNICATIONS 102 5 365-368 (1997)

M. S. Brandt | T. Puchert | M. Stutzmann

Enhanced Coherent Zener Tunneling in Indirect Gap Semiconductors

Phys. Stat. Sol. (b) 204, 420-423 (1997)

A. Di Carlo | P. Lugli | A. Kavokin | M. Vladimirova | P. Vogl

Enhanced Zener tunneling in Silicon

Solid State Commun. 101, 921 (1997)

A. Di Carlo | P. Lugli | P. Vogl

Erbium-silicon light emitting diodes grown by molecular beam epitaxy: optical properties

Thin Solid Films 294, 220-222 (1997)
E-MRS 1996 Spring Meeting, Strasbourg, France, June 4-7, 1996

Exact Kohn-Sham Exchange Potential in Semiconductors

Phys. Rev. Lett. 79, 2089 (1997)

M. Städele | J. Majewski | P. Vogl

Excitons in T-shaped quantum wires

Phys. Rev. Vol. 56 (7), 4108 – 4114 (1997)

S. Glutsch | F. Bechstedt | W. Wegscheider | G. Schedelbeck

Fabrication of lateral npn- and pnp- structures on Si/SiGe by focused laser beam writing and their application as photodetectors

J. Appl. Phys. 81 (9),6455-6460 (1997)

C. Engel | P. Baumgartner | M. Holzmann | J. F. Nützel | G. Abstreiter

Franz-Keldysh effect in lateral GaAs/AlGaAs based npn-structures

Appl. Phys. Lett. 70 (21), 2876-2878 (1997)

P. Baumgartner | C. Engel | G. Böhm | G. Abstreiter

Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 1309-1314 (1997)

Gamma-X mixing in T- and V-shaped Quantum Wires

Phys. Stat. Sol. (b) 204, 275-278 (1997)

A. Di Carlo | S. Pescetelli | A. Kavokin | M. Vladimirova | P. Lugli

Ge self-diffusion in isotopic (70Ge)n(74Ge)m superlattices: A Raman study

Phys. Rev. B 56 (4), 2062-2069 (1997)

E. Silveira | W. Dondl | G. Abstreiter | E. E. Haller

Growth of GaN/AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium

JOURNAL OF CRYSTAL GROWTH 170 1-4 335-339 (1997)

Growth of self-assembled homogeneous SiGe dots on Si(100)

Thin Solid Films 294, 291-295 (1997)
(E-MRS 1996 Spring Meeting Strasbourg)

High Performance Double Modulation Doped InAlAs/InGaAs/InAs HFETs

IEEE Electon Device Letters, Vol. 18 (7), 323-326 (1997)

High resolution x-ray diffraction from multilayered self-assembled Ge-dots

Phys. Rev. B 55 (23), 15652-15663 (1997)

Influence of germanium content on the photoluminescence of erbium- and oxygen-doped SiGe grown by molecular beam epitaxy

H. Holzbrecher, H. Bay and Ch. Buchal
Appl. Phys. Lett 71 (21), 3129-3131 (1997)

E. Neufeld | A. Sticht | K. Brunner | G. Abstreiter

Influence of magnesium doping on the structural properties of GaN layers

JOURNAL OF CRYSTAL GROWTH 181 3 197-203 (1997)

Influence of the erbium and oxygen content on the electroluminescence of epitaxially grown erbium-doped silicon diodes

Appl. Phys. Lett. 70 (18), 2431-2433 (1997)

A. Reittinger | J. Stimmer | G. Abstreiter

Infrared studies of p-type Si/SiGe quantum wells: intersubband absorption, infrared detectors, and second harmonic generation

Thin Solid Films (EMRS) 294, 330-335 (1997)

Intersubband transitions, infrared detectors, and optical nonlinearities in SiGe multiquantum wells

Mat. Res. Soc. Symp. Proc., 450, 201-211 (1997). "Infrared Applications of Semiconductors". Eds.: M. O. Manasreh, T. H. Meyers, and F. H. Julien. MRS, 1997.

Ion-ion interactions in mixed-valency diluted magnetic semiconductors

in 12th Int.Conf.High. Magnetic Fields in the Physics of Semiconductors, edited by G. Landwehr and W. Ossau (World Scientific, Singapore, 1997), p.861

J. Blinowski | P. Kacman | J. Majewski

Lateral photodetector devices on Si/SiGe heterostructures

Thin Solid Films 294, 347-350 (1997)

C. Engel | P. Baumgartner | M. Holzmann | J. F. Nützel | G. Abstreiter

Local spectroscopy of magnetoexcitons in different types of single quantum dots

12th Int. Conf. on The Application of High Magnetic Fields in Semiconductor Physics, Würzburg, Germany, July 28-Aug.2, 1996.Vol 2, 655-658 (1997)

W. Heller | U. Bockelmann | G. Abstreiter

Magnetooptical studies of a single quantum dot: Excited states and spin flip of excitons

Phys. Rev. B 55 (8), R4871-R4874 (1997)

W. Heller | U. Bockelmann

Micro-photoluminescence studies of single quantum dots. I. Time-resolved experiments

Phys. Rev. B 55 (7), 4456-4468 (1997).

U. Bockelmann | W. Heller | A. Filoramo | P. Roussignol

Micro-photoluminescence studies of single quantum dots. II. Magnetic-field experiments

Phys. Rev. B 55 (7), 4469-4472 (1997).

U. Bockelmann | W. Heller | G. Abstreiter

Optical constants of epitaxial AlGaN films and their temperature dependence

JOURNAL OF APPLIED PHYSICS 82 10 5090-5096 (1997)

P. Werner, N.A. Bert, G.G. Konnikov, A.A. Suvorova, V.M. Ustinov, N.N. Ledentsov, D. Bimberg, P. Schittenhelm

Inst. of Physics Conf. Series 155, 851-854 (1997)

A. O. Kosoyov | G. Abstreiter

Phonon-assisted exciton formation and relaxation in GaAs/AlGaAs Quantum Wells

Phys. Rev. B 55, 16049 (1997)

M. Gulia | F. Rossi | E. Molinari | P. E. Selbmann | P. Lugli

Phonon-Assisted Exciton Formation and Relaxation: Bulk and Two-Dimensional Systems

Phys. Stat. Sol. (b) 204, 223-226, (1997)

Physik und Technologie von Quantendrähten

In „Niederdim. Quantenstr. u. Materialien f. blaue Lichtquellen“. Eds.: A.Schlachetzki, H. Bachmair. PTB Bericht E 53. Wirtschaftsverlag NW, Bremerhaven, 96.184 (1997)

W. Wegscheider

Properties and applications of MBE grown AlGaN

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 50 1-3 212-218 (1997)

Prospects of Ga/In/Al-N nanometer devices: Electronic structure, scattering rates, and high field transport

Phys. Stat. Sol. (b) 204, 133 - 135 (1997)

G. Zandler | J. Majewski | M. Städele | P. Vogl | F. Compagnone

Quantum Wires and Dots Fabricatet by Cleaved Edge Overgrowth

Phys. Stat. Sol. (a) 164, 601-606 (1997)

W. Wegscheider | G. Schedelbeck | M. Bichler | G. Abstreiter

Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2 42-45 art. no.-43 (1997)

A. Cros | H. Angerer | R. Handschuh | O. Ambacher | M. Stutzmann

Raman spectra of isotopic GaN

PHYSICAL REVIEW B 56 22 14399-14406 (1997)

Raman study of the optical phonons in AlxGa1-xN alloys

SOLID STATE COMMUNICATIONS 104 1 35-39 (1997)

Realization of AlGaAs antidot arrays by pulsed laser interference gratings

M. Stutzmann
J. Appl. Phys. 82, 1497 (1997)

Realization of AlGaAs antidot arrays by pulsed laser interference gratings

JOURNAL OF APPLIED PHYSICS 82 3 1497-1499 (1997)

Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin-film transistors

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 36 1A 121-125 (1997)

G. Kawachi | C. F. O. Graeff | M. S. Brandt | M. Stutzmann

Self-assembled growth of Sn on Ge (001)

Thin Solid Films 294, 308-310 (1997)
(E-MRS 1996 Spring Meeting Strasbourg)

W. Dondl | P. Schittenhelm | G. Abstreiter

Si-29 nuclear magnetic resonance of luminescent silicon

APPLIED PHYSICS LETTERS 70 2 188-190 (1997)

M. S. Brandt | S. E. Ready | J. B. Boyce

Single electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure

Appl. Phys. Lett. 70 (16), 2135-2137 (1997)

Stability and band offsets of polar GaN/SiC(001) and AlN/SiC (001) interfaces

Phys. Rev. B 56, 6911-6920 (1997)

M. Städele | J. Majewski | P. Vogl

Stability and Band Offsets of SiC/GaN, SiC/AlN, and AlN/GaN heterostructures

Mat. Res. Soc. Symp. Proc. 449, 887-892 (1997)

J. Majewski | M. Städele | P. Vogl

STM-Cathodoluminescence of Self-Assembled InGaAs Quantum Dots

Phys. Stat. Sol. (a) 164, 301-305 (1997)

M. Markmann | A. Zrenner | G. Böhm | G. Abstreiter

Structural characterization of self-organized semiconductor dots by X-ray methods

Phantoms Newsletters 13, 1-5 (1997)

A. A. Darhuber | V. Holy | G. Bauer | P. Schittenhelm | G. Abstreiter

Sub-bandgap spectroscopy of chemical vapor deposition diamond

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 46 1-3 115-118 (1997)

Submilliampere vertical-cavity surface-emitting lasers with intracavity contacts and buried lateral current confinement

Inst. Phys. Conf. Ser. 155 (4), 381-385 (1997)

M. Hauser | H. Kratzer | G. Böhm | G. Tränkle | G. Weimann

Subpicosecond vibronic dynamics in KBr F-centers

Phys. Rev. B 56, 1179-95 (1997)

Temperature and Power Dependence of Exciton Spectra in Quantum Dots

Phys. Stat. Sol. (a) 164, 281-286 (1997)

U. Bockelmann | W. Heller | A. Filoramo | P. Roussignol | G. Abstreiter

Theoretical investigation of subpicosecond vibronic dynamics in alkali halides

J. Lumin. 72-74, 838-9 (1997)

R. Scholz | F. Bassani | M. Schreiber

Theory of intraband magneto-optics of excitons in coupled double quantum wells

12th Int. Conf., High Magnetic Fields in the Physics of Semiconductors II, Würzburg, Germany, July 28-Aug.2, 1996. Vol 2, 693-696 (1997)

A. B. Dzyubenko | A. L. Yablonskii

Transport properties and electroluminescence of siloxene

JOURNAL OF APPLIED PHYSICS 82 9 4520-4524 (1997)

M. Rosenbauer | M. Stutzmann

Ultrafast Rabi oscillations of free-carrier transitions in InP

Phys. Stat. Sol. (b) 204, 20 (1997).

C. Fürst | A. Leitensdorfer | A. Nutsch | G. Tränkle | A. Zrenner

X-ray diffraction and reflection from self-assembled Ge-dots

Thin Solid Films 294, 298-299 (1997)
(E-MRS 1996 Spring Meeting Strasbourg)

A. A. Darhuber | H. Stangl | G. Bauer | P. Schittenhelm | G. Abstreiter

An efficient multigrid poisson solver for device simulations

IEEE Transactions on CAD of Integrated Circuits and Systems 15, 141 (1996)

M. Saraniti | A. Rein | G. Zandler | P. Vogl | P. Lugli

Anomalous transport and luminescence of indirect excitons in coupled quantum wells

Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, (1996). Eds.: M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996. Vol. 3. 1927-1934.

L. V. Butov

Anomalous Transport of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells

Surface Science 361/362, 243-246 (1996).
(Proc. of the EP2DS XI, Nottingham, UK, Aug. 7-11, 1995)

Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport

PHYSICAL REVIEW B 54 11 7957-7964 (1996)

G. Kawachi | C. F. O. Graeff | M. S. Brandt | M. Stutzmann

Cellular automata for device simulation - concepts and applications

in: Proc. of the 1996 Int. Conf. on Simulation of Semiconductor Processes and Devices, Tokyo, Business Center for Academic Societies Japan, Tokyo 1996, pp 39

G. Zandler | M. Saraniti | A. Rein | P. Vogl

Confinement effects and polarization dependence of luminescence from monolayer-thick Ge quantum wells

Phys. Rev. B 54 (3), 1922-1927 (1996)

Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films

THIN SOLID FILMS 276 1-2 100-103 (1996)

T. Fischer | V. PetrovaKoch | K. Shcheglov | M. S. Brandt | F. Koch

Diffusion Effects and Luminescence in Thin SiGe/Si Layers

Solid State Phenomena Vols 47-48, 473-484 (1996)

Direct measurement of exciton diffusion in quantum wells

Solid State Electronics Vol. 40 (1-8), 725-728 (1996)
(7th Int. Conf. on Modulated Semiconductor Structures, Madrid, Spain, July 10-14, 1995.)

W. Heller | A. Filoramo | P. Roussignol | U. Bockelmann

Dynamics of exciton gases in quantum dots

Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, (1996). Eds.: M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996. Vol. 2. 1437-1440.

U. Bockelmann | A. Filoramo | W. Heller | P. Roussignol

Early stages of growth of self-assembled Ge-rich islands on Si

Proc. of 11th European Congress on Electron Microscopy, Dublin, Aug. 26-30, 1996. Publ.: EUREM’96, U.C.D. Belfield, Dublin 4, Ireland.

D. Meertens | W. Jäger | P. Schittenhelm | G. Abstreiter

Electrically detected magnetic resonance in a-Si:H/a-Ge:H multilayers

JOURNAL OF APPLIED PHYSICS 79 12 9166-9171 (1996)

C. F. O. Graeff | M. Stutzmann | S. Miyazaki

Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes

JOURNAL OF APPLIED PHYSICS 80 8 4541-4547 (1996)

N. M. Reinacher | M. S. Brandt | M. Stutzmann

Electric-field-induced exciton transport in coupled quantum well structures

Solid State Electronics Vol. 40 (1-8), 429-431 (1996)
(7th Int. Conf. on Modulated Semiconductor Structures, Madrid, Spain, July 10-14, 1995.)

M. Hagn | A. Zrenner | G. Böhm | G. Weimann

Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy

Appl. Phys. Lett. 68 (23), 3290-3292 (1996)

Electronic excitations in quantum wires and dots

Physica B 227, 6-10 (1996)
(3rd Int. Symp. on New Phenomena in Mesoscopic Structures, Maui, Hawaii, Dec. 4-8, 1995)

G. Abstreiter | R. Strenz | G. Schedelbeck | E. Silveira

Electronic properties of Si/SiGe/Ge heterostructures

Physica Scripta Vol. T68, 68-71 (1996).
(The Nobel Symposium on Heterostructures in Semiconductors, Arild, Sweden, June 4-9, 1996.)

Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN

MRS Intern. J. Nitride Semicond. Res. 1, 30 (1996)

J. A. Majewski | M. Städele | P. Vogl

Exact exchange potential for semiconductors

in: Proc. 23rd Int. Conference on the Physics of Semiconductors, ed. by M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996, pp 613

M. Städele | J. A. Majewski | P. Vogl | A. Görling

Exciton fine structure in undoped GaN epitaxial film

Phys. Rev. B 53, 16543 (1996)

Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's

IEEE Trans. on Elec. Dev. 43, 1769-1777 (1996)

Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing

Appl. Phys. Lett. 68 (21), 3025-3027 (1996)

Far-infrared-study of shallow etched quantum wires on high mobility GaAs/AlGaAs heterostructures and quantum-wells

Solid-State Electronics, Vol. 40 (1-8), 333-337 (1996).

Ferromagnetic superexchange in Cr-based diluted magnetic semiconductors

Phys. Rev. B 53, 9524 (1996)

J. Blinowski | P. Kacman | J. A. Majewski

Ferromagnetism in Cr-based diluted magnetic semiconductors

J. Crystal Growth 159, 972 (1996)

J. Blinowski | P. Kacman | J. A. Majewski

Generalized Kohn-Sham schemes and the band gap problem

Phys. Rev. B 53, 3764 (1996)

A. Seidl | A. Görling | P. Vogl | J. A. Majewski | M. Levy

Growth and characterization of self-assembled Ge-rich islands on Si

Semicond. Sci. Technol. 11, 1521-1528 (1996)
(Proc. of the 9th Winterschool in Mauterndorf, Febr. 19-23, 1996)

Growth conditions of Erbium-Oxygen-doped Silicon grown by MBE

Mat. Res. Soc. Symp. Proc. Vol. 422, 15 (1996). „THEMA“. Eds.: ?. MRS, San Francisco, 1996.

J. Stimmer | A. Reittinger | G. Abstreiter | H. Holzbrecher | C. Buchal

Growth of GaN/AlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium

JOURNAL OF CRYSTAL GROWTH 167 1-2 1-7 (1996)

HEMT models and simulations

in: Pseudomorphic HEMT Technology and Applications, ed. by R. L. Ross, S. .P. Svensson, and P. Lugli, Kluwer Academic Publisher, Dordrecht, The Netherlands (1996) pp 141

Inelastic light scattering by phonons and electronic excitations in low-dimensional semiconductor structures

J. of Raman Spectroscopy Vol. 27, 193-200 (1996)

Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films

APPLIED PHYSICS LETTERS 68 7 970-972 (1996)

Intersubband relaxation and thermalization of electrons in GaInAs/AlInAs quantum wells studied by femtosecond infrared spectroscopy

Phys. Rev. Lett. 77, 3657 (1996)

Intrawell and interwell magnetoexcitons in InxGa1-xAs/GaAs coupled double quantum wells: theory

Phys. Rev. B 53 (24), 16 355-16 364 (1996).

A. B. Dzyubenko | A. L. Yablonskii

Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

APPLIED PHYSICS LETTERS 68 14 1984-1986 (1996)

M. K. Kelly | C. E. Nebel | M. Stutzmann | G. Bohm

Linewidth and finestructure of optical spectra from single quantum dots

Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, (1996). Eds.: M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996. Vol. 2. 1433-1436.

Magnetotransport of electrons in arrays of wires in Si/Si0.7Ge0.3 heterostructures

Surface Science 361/362, 673-676 (1996)
(Proc. of the EP2DS XI, Nottingham, UK, Aug. 7-11, 1995)

Medium-wavelength, normal-incidence, p-type Si/SiGe quantum well infrared photodetector with background limited performance up to 85 K

Appl. Phys. Lett. 69 (22), 3372-3374 (1996).

Microscopic analysis of intrinsic noise in semiconductor devices by the cellular automaton method

in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors, ed. by K. Hess, J. P. Leburton, and U. Ravaioli. Plenum Publishing Coop., New York - London 1996, pp 497

A. Rein | G. Zandler | M. Saraniti | P. Vogl

Nitrogen-related dopant and defect states in CVD diamond

PHYSICAL REVIEW B 54 11 7874-7880 (1996)

On the voltage stability of lateral barriers in in-plane-gated structures

Appl. Phys. Lett. 69 (1), 76-78 (1996)

P. Baumgartner | C. Engel | G. Abstreiter

Optical absorbance of oriented thin films

Synth. Metals 76, Issues 1-3, 177-179, (1996)

A. Niko | F. Meghdadi | G. Leising | C. Ambrosch-Draxl | P. Vogl

Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence

APPLIED SURFACE SCIENCE 102 323-326 (1996)

M. C. Rossi | M. S. Brandt | M. Stutzmann

Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond

APPLIED PHYSICS LETTERS 69 21 3215-3217 (1996)

Optical patterning of GaN films

APPLIED PHYSICS LETTERS 69 12 1749-1751 (1996)

Optical properties of reactive-ion-etched Si/Si1-xGex heterostructures

J. of Vac. Sci. Technol. B 14 (2), 698-706 (1996)

Optical spectroscopy of single quantum dots

Surface Science 361/362, 756-761 (1996)
(Proc. of the EP2DS XI, Nottingham, UK, Aug. 7-11, 1995)

A. Zrenner

Oscillatory transport of electrons in GaAs surface - space - charge fields

in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors, ed. by K. Hess, J. P. Leburton, and U. Ravaioli, Plenum Publ. Co., New York-London, 1996, pp 61

W. Fischler | R. A. Höpfel | G. Zandler

PEMBE-growth of gallium nitride on (0001)sapphire: A comparison to MOCVD grown GaN

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 1 1-46 U112-U116 (1996)

Photoluminescence of Erbium-Oxygen-doped Silicon grown by molecular beam epitaxy

Solid State Communications Vol. 100 (5), 321-323 (1996)

J. Stimmer | C. Wetterer | G. Abstreiter

Physik und Technologie von Quantendrähten

In „Niederdimensionale Quantenstrukturen und Materialien für blaue Lichtquellen“. Eds.: A. Schlachetzki and H. Bachmair. PTB Bericht E 53. Wirtschaftsverlag NW, Bremerhaven, 1996. 184.

W. Wegscheider

Polarization dependence of intersubband absorption and photoconductivity in p-type SiGe quantum wells

Superlattices and Microstructures Vol. 20 (2), 237-243 (1996)
(ITQW 1995)

Properties of hydrogenated amorphous silicon suboxide alloys with visible room-temperature photoluminescence

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 73 5 799-816 (1996)

M. Zacharias | D. DimovaMalinovska | M. Stutzmann

Pseudomorphic HEMTs: Technology and applications

Kluwer Academic Publisher, Dordrecht, The Netherlands (1996)

S. Swensson | P. Lugli

Quantized conductance in a Si/Si0.7Ge0.3 split-gate device and impurity-related magnetotransport phenomena

Solid State Electronics Vol. 40 (1-8), 405-408 (1996)
(7th Int. Conf. on Modulated Semiconductor Structures, Madrid, Spain, July 10-14, 1995.)

D. Többen | D. A. Wharam | G. Abstreiter | J. P. Kotthaus | F. Schäffler

Quenching of the Nonradiative Auger-Recombination in Coupled Quantum Wells

Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, (1996). Eds.: M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996. Vol. 3. 1991-1994.

M. Hagn | A. Zrenner | G. Böhm | G. Weimann

Resonant inelastic light scattering by electronic excitations in tunable quantum wire structures

Surface Science 361/362, 783-787 (1996)
(Proc. of the EP2DS XI, Nottingham, UK, Aug. 7-11, 1995)

RHEED investigations of surface diffusion on Si(001)

Applied Surface Science 102, 78-81 (1996).
(Proc. of the Int. Symp. on Si heterostructures:from physics to devices, Heraklion, Greece, Sept. 11-14, 1995)

J. F. Nützel | P. Brichzin | G. Abstreiter

Room temperature electroluminescence of Erbium-Oxygen-doped Silicon diodes grown by molecular beam epitaxy

Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, (1996). Eds.: M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996. Vol. 4. 3945-3048.

Room temperature electroluminescence of Er-implanted silicon diodes grown by MBE

Applied Surface Science 102, 327-330 (1996).
(Proc. of the Int. Symp. on Si heterostructures:from physics to devices, Heraklion, Greece, Sept. 11-14, 1995)

Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells

Solid State Electronics Vol. 40 (1-8), 763-766 (1996)
(7th Int. Conf. on Modulated Semiconductor Structures, Madrid, Spain, July 10-14, 1995.)

Segregation and diffusion on semiconductor surfaces

Phys. Rev. B 53 (20), 13 551-13 558 (1996)

J. F. Nützel | G. Abstreiter

Segregation of n-dopants on SiGe surfaces

Applied Surface Science 102, 98-101 (1996)
(Proc. of the Int. Symp. on Si heterostructures:from physics to devices, Heraklion, Greece, Sept. 11-14, 1995)

J. F. Nützel | M. Holzmann | P. Schittenhelm | G. Abstreiter

Self-consistent tight-binding calculation of electronic and optical properties of semiconductor heterostructures

in: Highlights of light spectroscopy on semiconductors, edited by A. D'andrea, L. G. Quagliano, S. Selci (World Scientific, Singapore, 1996), pp 175

A. D. Carlo | S. Pescetelli | M. Paciotti | P. Lugli

Self-consistent tight-binding calculations of electronic and optical properties of semiconductor nanostructures

Solid State Commun. 98, 803-806 (1996)

A. Di Carlo | S. Pescetelli | M. Paciotti | P. Lugli | M. Graf

Self-interaction corrections in semiconductors

Phys. Rev. B 52, 16567 (1996)

Single-electron subpicosecond coherent dynamics in KBr F-centers

Phys. Rev. Lett. 77, 3463-6 (1996)

Spatial Distribution of Electromagnetic Fields of Sub-Wavelength Sized Apertures

Spatially indirect radiative recombination of carriers localized in Si1-x-yGexCy/Si1-yCy double quantum well structure on Si substrates

Appl. Phys. Lett. 69 (9), 1279-1281 (1996)

K. Brunner | W. Winter | K. Eberl

Spin-dependent transport in amorphous silicon thin-film transistors

JOURNAL OF NON-CRYSTALLINE SOLIDS 200 1117-1120 (1996)

C. F. O. Graeff | G. Kawachi | M. S. Brandt | M. Stutzmann | M. J. Powell

Stability and band offsets of SiC/GaN, SiC/AlN, and AlN/GaN heterostructures

in: Proc. 23rd Int. Conference on the Physics of Semiconductors, ed. by M. Scheffler und R. Zimmermann. World Scientific, Singapore 1996, pp 983

A. Majewski | M. Städele | P. Vogl

Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode

Physica B 227, Issues 1-4, 206-209 (1996)

Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode

Physica B 227, Issues 1-4, 206-209 (1996)

Strong magnetic field dependence of laser emission from quantum wires formed by cleaved edge overgrowth

Solid State Electronics Vol. 40 (1-8), 1-6 (1996)
(7th Int. Conf. on Modulated Semiconductor Structures, Madrid, Spain, July 10-14, 1995.)

Structure and luminescence of SiGe-Si quantum dots and wires from local epitaxy

Proc. of 11th European Congress on Electron Microscopy, Dublin, Aug. 26-30, 1996. Publ.: EUREM’96, U.C.D. Belfield, Dublin 4, Ireland.

Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy

SOLID STATE COMMUNICATIONS 97 5 365-370 (1996)

Sub-micron silicon structures for thin film solar cells

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 194 1 55-67 (1996)

C. E. Nebel | B. Dahlheimer | S. Schoniger | M. Stutzmann

The influence of surface states on in-plane-gated structures

Superlattices and Microstructures, Vol. 20, No. 4, 587-594 (1996).
(Proc. of the 3rd Int. Workshop NanoMES’96, Santa Fe, May 19-24, 1996.)

P. Baumgartner | C. Engel | G. Abstreiter

The sign of the Hall effect in hydrogenated amorphous and disordered crystalline silicon

PHILOSOPHICAL MAGAZINE LETTERS 74 6 455-463 (1996)

C. E. Nebel | M. Rother | M. Stutzmann | C. Summonte | M. Heintze

Theory of electronic and optical properties of magnetoexcitons in quantum-well wires

Phys. Rev. B 54, 17003 (1996)

M. Graf | P. Vogl | A. B. Dzyubenko

Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 14 6 3532-3542 (1996)

Time and space resolved spectroscopy of single semiconductor quantum dots

Brazilian J. of Physics, Vol. 26 (1), 95-99 (1996)

P. Roussignol | U. Bockelmann | A. Filoramo | W. Heller

Time resolved spectroscopy of single quantum dot structures

Solid State Electronics Vol. 40 (1-8), 541-544 (1996)
(7th Int. Conf. on Modulated Semiconductor Structures, Madrid, Spain, July 10-14, 1995.)

U. Bockelmann | P. Roussignol | A. Filoramo | W. Heller | G. Abstreiter

Time resolved spectroscopy of single quantum dots: Fermi gas of excitons?

Phys. Rev. Lett. 76, (19), 3622-3625 (1996)

Transport in silicon/germanium nanostructures

Applied Surface Science 102, 230-236 (1996).
(Proc. of the Int. Symp. on Si heterostructures:from physics to devices, Heraklion, Greece, Sept. 11-14, 1995)

M. Holzmann | D. Többen | G. Abstreiter

Transport of two-dimensional excitons in magnetic fields

Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, (1996). Eds.: M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996. Vol. 3. 2063-2066.

A. B. Dzyubenko | P. I. Arseyev

Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells

Appl. Phys. Lett. 68, (25), 3611-3613 (1996)

Ultrafast reflectivity changes in photoexcited GaAs Schottky-diodes

Appl. Phys. Lett. 68, 2778-2780 (1996)

W. Fischler | P. Buchberger | R. A. Höpfel | G. Zandler

Wannier-Stark oscillations in Zener tunneling currents

Solid-State Electronics 40, 245 (1996)

X-ray diffraction study of gallium nitride grown by MOCVD

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 193 2 391-397 (1996)

T. Metzger | H. Angerer | O. Ambacher | M. Stutzmann | E. Born

Yellow luminescence and hydrocarbon contamination in MOVPE-grown GaN

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 158 2 587-597 (1996)

P. DeMierry | O. Ambacher | H. Kratzer | M. Stutzmann

A relativistic self-interaction-free density functional formalism

Phys. Rev. A52, 282 (1995)

Analysis and optimization of bulk electro-absorption modulators

IEEE Journal of Quantum Electronics 31, 261 (1995)

P. Lugli | D. Meglio | R. Sabella | O. Sahlin

Angular dispersion of confined optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy

Solid State Communications 93, (10), 847-851 (1995)

Antidot superlattices in two-dimensional hole gases confined in strained germanium layers

Semicond. Sci. Technol. 10, 1413-1417 (1995)

ASYNCHRONOUS TRANSFER MODE

COMMUTATION & TRANSMISSION 17 45-58 (1995)

H. SEGUIN | M. LEMONIER | M. STUTZMANN | P. GRAFF | D. HERZ

Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3 heterostructure

Semicond. Sci. Technol. 10, 711-714 (1995)

D. Többen | D. A. Wharam | G. Abstreiter | J. P. Kotthaus | F. Schäffler

Binding of electrons and holes at quantum wires formed by T-intersecting quantum wells

Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates, Rottach-Egern, Germany, Feb. 20 - 24 (1995). Eds.: K. Eberl, P. M. Petroff, P. Demeester. Kluwer Academic Publishers, Dordrecht 1995. 93-100. (NATO ASI Ser.:E; Vol. 298).

L. Pfeiffer | H. Baranger | D. Gershoni | K. Smith | W. Wegscheider

Broad-band wavelength-tunable twin-guide lasers

Optoelectronics - Devices and Technologies 10 (1995) 27-38 (invited).

Comparison of P and Sb as n-dopants for Si molecular beam epitaxy

J. Appl. Phys. 78 (2), 937-940 (1995)

J. F. Nützel | G. Abstreiter

CORRELATION BETWEEN THE LUMINESCENCE AND RAMAN PEAKS IN QUANTUM-CONFINED SYSTEMS

THIN SOLID FILMS 255 1-2 241-245 (1995)

P. DEAK | Z. HAJNAL | M. STUTZMANN | H. D. FUCHS

DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS

PHYSICAL REVIEW B 52 7 4680-4683 (1995)

C. F. O. GRAEFF | M. S. BRANDT | M. STUTZMANN | M. J. POWELL

Determination of the intersubband lifetime in Si/SiGe quantum wells

Appl. Phys. Lett. 66 (24), 3313-3315 (1995)

Direct and indirect magnetoexcitons in symmetric InxGa1-xAs/GaAs coupled quantum wells

Phys. Rev. B 52 (16), 12 153-12 157 (1995)

L. V. Butov | A. Zrenner | G. Abstreiter | A. V. Petinova | K. Eberl

Distributed forward coupled (DFC) laser

IEEE J. of Selected Topics in Quantum Electronics 1 (1995) 387-395.

M. C. Amann | B. Borchert | S. Illek | T. Wolf

Doppler broadening and collisional relaxation effects in a lasing-without-inversion experiment

Phys. Rev. A51, 4030, (1995)

Dynamics of exciton formation and relaxation in semiconductors

in: Proc. 9th Internat. Conf. on Hot Carriers in Semiconductors (Chicago, 1995), ed.by K. Hess, Plenum, New York (1995)

P. E. Selbmann | M. Gulia | F. Rossi | E. Molinari | P. Lugli

Effective masses in SiGe

In: Properties of strained and relaxed Silicon Germanium.
Ed. E. Kasper. INSPEC, IEE, London, 1995. 103-109. (EMIS Datareviews Series Nr. 12).

J. F. Nützel | C. M. Engelhardt | G. Abstreiter

Electric-field-induced exciton transport in coupled quantum well structures

Appl. Phys. Lett. 67 (2), 232-234 (1995)

M. Hagn | A. Zrenner | G. Böhm | G. Weimann

Electromagnetic fields and dielectric response in empirical tight binding theory

Phys. Rev. B 51, 4940 (1995)

M. Graf | P. Vogl

Electronic and structural properties of semiconductors with nonlocal exchange-correlation-potentials

in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 189, (1995)

A. Seidl | M. Rieger | J. A. Majewski | P. Vogl

Electronic properties of InAs/antimonide-based short period tunneling structures

in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 711 (1995).

J. A. Majewski

Excitons in high magnetic fields in disordered two-dimensional systems: Weak-localization effects for composite neutral particles

Phys. Rev. B 52 (4), R2261-R2264 (1995)

P. I. Arseyev | A. B. Dzyubenko

Fabrication and characterization of locally grown SiGe wires and dots

Mat. Sci. and Technol. 11, (4), 407-409 (1995).(Proc. of the 1st Int. Conf. on Materials for Microelectronics, Barcelona, Spain, Oct. 17 - 19., 1994).

Fabrication and Characterization of Si/SiGe Nanometer Structures

Microelectronic Engineering 27, 83-86 (1995). (Proc. of the Int. Conf. on Micro- and Nano-Engineering (MNE), Davos, Switzerland, Sept. 26 - 29, 1994)

Fabrication of lateral npn-phototransistors with high gain and sub-µm spatial resolution

Appl. Phys. Lett. 66, (6), 751-753 (1995)

P. Baumgartner | C. Engel | G. Abstreiter | G. Böhm | G. Weimann

Far field characterization of diffracting circular apertures

Appl. Phys. Lett. 67 (23), 3408-3410 (1995)

C. Obermüller | K. Karraï

Ferromagnetism in Cr-based diluted magnetic semiconductors

Acta Physica Polonica A, Vol.88, 683 (1995)

J. Blinowski | P. Kacman | J. A. Majewski

First-principles studies of structural and optical properties of crystalline poly (para phenylene)

Phys. Rev. B51, 9668 (1995)

C. Ambrosch-Draxl | J. A. Majewski | P. Vogl | G. Leising

FMCW-Lidar with tunable twin-guide laser diode

In: Trends in Optical Fibre Metrology and Standards (ed. O. D. D. Soares), NATO ASI Series, Series E: Applied Sciences - Vol. 285, Kluwer Academic Publishers, Dordrecht, NL. (1995) 791-802.

A. Dieckmann | M. C. Amann

GaAs/AlGaAs quantum wire lasers and other low-dimensional structures fabricated by cleaved edge overgrowth

Festkörperprobleme (Advances in Solid State Physics) 35, 155-174 (1995). Ed.: R. Helbig. Vieweg, Braunschweig, 1995.

W. Wegscheider | L. N. Pfeiffer | K. W. West

GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

J. of Crystal Growth 150, 285-292 (1995)
(Proc. of the 8th Int. Conf. on Molecular Beam Epitaxy, Osaka, Japan, August 29 - September 2, 1994)

Germanium70Ge/74Ge isotope heterostructures: An approach to self-diffusion studies

Phys. Rev. B 51, (23), 16 817-16 821 (1995)

Grenzflächenstabilität und elektronische Struktur von SiC/GaN-(001)-Übergittern

Verhandl. DPG (VI), 30, 1131 (1995)

M. Städele | P. Vogl

Growth and properties of high mobility two-dimensional hole gases in Ge on relaxed Si/SiGe, Ge/SiGe buffers and Ge substrates

J. of Crystal Growth 150, 1011-1014 (1995)
(Proc. of the 8th Int. Conf. on Molecular Beam Epitaxy, Osaka, Japan, August 29 - September 2, 1994)

Hole-phonon scattering rates in gallium arsenide

J. Appl. Phys. 77, 3219-31 (1995)

In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation

Appl. Phys. Lett. 67 (11), 1579-1581 (1995)

Investigation of strain relaxation of Ge1-xSix epilayers on Ge(001) by high-resolution x-ray reciprocal space mapping

Semicond. Sci. Technol. 10, 1621-1628 (1995).

J. H. Li | V. Holý | G. Bauer | J. F. Nützel | G. Abstreiter

Local epitaxy of Si/SiGe wires and dots

J. of Cryst. Growth 157, 270-275 (1995). (Proc. of E-MRS 1995 Spring Meeting, Strasbourg, France, May 22-26, 1995.)

Magnetic-Field induced Intersubband Resonances in AlGaAs/GaAs Quantum Wells

Europhysics Letters 30, 111-116 (1995)

MBE-growth of ternary SnGeSiGe superlattices

J. of Cryst. Growth 157, 400-404 (1995). (Proc. of E-MRS 1995 Spring Meeting, Strasbourg, France, May 22-26, 1995.)

W. Dondl | E. Silveira | G. Abstreiter

Microscopic calculation of the electron optical-phonon interaction in ultrathin GaAs/AlGaAs alloy quantum well systems

Phys. Rev. B52, 7046 (1995)

L. Insook | S. M. Goodnick | M. Gulia | E. Molinari | P. Lugli

Microwave Fabry-Pérot Transmission through YBaCuO Superconducting Thin Films

Phys. Rev. Lett. 75 (21), 3934-3937 (1995)

Mikroskopische Analyse des Rauschverhaltens in Bauelementen mit der Methode Zellulärer Automaten

Verhandlg. der Dt. Phys. Ges. (VI) 30, 1306, Berlin (1995)

A. Rein | G. Zandler | M. Saraniti | P. Vogl

Molecular beam epitaxial grown Si1-xCx layers on Si(001) as a substrate for MOWCVD of diamond

J. of Cryst. Growth 157, 426-430 (1995). (Proc. of E-MRS 1995 Spring Meeting, Strasbourg, France, May 22-26, 1995.)

Nanometer resolved photocurrent and local minority carrier transport in GaAs p-n junctions

in: Proc. of the 22nd ICPS, Ed. David J.Lookwood, World Scientific, 249 (1995)

G. Zandler | G. Kolb | K. Karrai | G. Abstreiter | P. Vogl

One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures

Appl. Phys. Lett. 66, (7), 833-835 (1995)

Optical and acoustical phonons in SiGe; Raman spectroscopy

In: Properties of strained and relaxed Silicon Germanium.
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R. Schorer

Optical and electronic properties of crystalline poly(para-phenylene) by first-principles calculations and experimental results

Optical anisotropy of Si/Ge superlattices: Resonant Raman scattering in in-plane geometry

Solid State Communications 93, (12), 1025-1029 (1995)

Optical near-field induced current microscopy

Ultramicroscopy 61, 299-304 (1995) (NFO-3, Brno, Czech Republic, May 9-11, 1995)

K. Karraï | G. Kolb | G. Abstreiter | A. Schmeller

Optical properties of silicon nanostructures

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 192 2 273-286 (1995)

Optical study of diffusion limitation in MBE growth of SiGe quantum wells

Semicond. Sci. Technol. 10, 319-325 (1995)

Optically detected cyclotron resonance on GaAs/AlxGaAs1-x quantum wells and quantum wires

Phys. Rev. B 52 (15), 11 313-11 318 (1995)

Phase-noise-limited accuracy of distance measurements in a frequency-modulated continuous-wave LIDAR with tunable twin-guide laser diode

Optical Engineering 34 (1995) 896-903.

A. Dieckmann | M. C. Amann

Photodetector with subwavelength spatial resolution

Ultramicroscopy 57, 208-211 (1995).(Proc. of the 2nd Int. Conf. on Near Field Optics, Raleigh, USA, October 20-22, 1993.)

Photoluminescence study of the crossover from two-dimensional to three-dimensional growth for Ge on Si(100)

Appl. Phys. Lett. 67 (9), 1292-1294 (1995)

P. Schittenhelm | M. Gail | J. Brunner | J. F. Nützel | G. Abstreiter

Piezoelectric tip-sample distance control for near field optical microscopes

Appl. Phys. Lett. 66 (14), 1842-1844 (1995)

K. Karraï | R. D. Grober

Piezo-electric tuning fork tip-sample distance control for near field optical microscopes

Ultramicroscopy 61, 197-205 (1995) (NFO-3, Brno, Czech Republic, May 9-11, 1995)

K. Karraï | R. D. Grober

RADIATIVE AND NONRADIATIVE RECOMBINATION IN POROUS SILICON - WHAT CAN WE LEARN FROM SPIN-RESONANCE

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 97-106 (1995)

M. STUTZMANN | M. S. BRANDT

Resonant inelastic light scattering by plasmons at the crossover from two- to one-dimensional behavior

Solid State Communications 93, (7), 569-574 (1995)

G. Schedelbeck | R. Strenz | G. Abstreiter | G. Böhm | G. Weimann

RESONANTLY EXCITED PHOTOLUMINESCENCE IN POROUS SILICON

THIN SOLID FILMS 255 1-2 250-253 (1995)

M. ROSENBAUER | D. H. LEACH | M. SENDOVAVASSILEVA | S. FINKBEINER | M. STUTZMANN

RESONANTLY EXCITED PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON

PHYSICAL REVIEW B 51 16 10539-10547 (1995)

M. ROSENBAUER | S. FINKBEINER | E. BUSTARRET | J. WEBER | M. STUTZMANN

Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy

Journal of Crystal Growth 157, 15-20 (1995)

Room-temperature photoluminescence of GemSinGem structures

Appl. Phys. Lett. 66 (22), 2978-2980 (1995)

Self-assembling InP/In0.48Ga0.52P quantum dots grown by MBE

Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates, Rottach-Egern, Germany, Feb. 20 - 24 (1995). Eds.: K. Eberl, P. M. Petroff, P. Demeester. Kluwer Academic Publishers, Dordrecht 1995. 59-67. (NATO ASI Ser.:E; Vol. 298).

A. Kurtenbach | K. Eberl | K. Brunner | G. Abstreiter

Self-organized MBE growth of Ge-rich SiGe-dots on Si(100)

J. of Cryst. Growth 157, 260-264 (1995). (Proc. of E-MRS 1995 Spring Meeting, Strasbourg, France, May 22-26, 1995.)

P. Schittenhelm | M. Gail | G. Abstreiter

Si/Si1-xGex multiquantum wells: a route to infrared detectors

Vibrational Spectroscopy 8, 109-119 (1995)

SiGe Quantum Wells on (110) Si Grown by Molecular Beam Epitaxy

J. of Crystal Growth 150, 1050-1054 (1995)
(Proc. of the 8th Int. Conf. on Molecular Beam Epitaxy, Osaka, Japan, August 29 - September 2, 1994)

J. Brunner | M. Gail | G. Abstreiter | P. Vogl

SiGe quantum wells on (110) Si grown molecular beam epitaxy

J. Crystal Growth 150, 1050 (1995)

J. Brunner | M. Gail | G. Abstreiter | P. Vogl

SiGe Wires and Dots Grown by Local Epitaxy

J. of Crystal Growth 150, 1060-1064 (1995)
(Proc. of the 8th Int. Conf. on Molecular Beam Epitaxy, Osaka, Japan, August 29 - September 2, 1994)

Simulation of molecular beam epitaxial growth over nonplanar surfaces

Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates, Rottach-Egern, Germany, Feb. 20 - 24 (1995). Eds.: K. Eberl, P. M. Petroff, P. Demeester. Kluwer Academic Publishers, Dordrecht 1995. 283-290. (NATO ASI Ser.:E; Vol. 298).

W. Wegscheider | L. Pfeiffer | K. West

Spin-dependent transport in SiC and III-V semiconductor devices

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS 196- 1915-1922 (1995)

N. M. Reinacher | M. S. Brandt | M. Stutzmann

Stability and band offsets of heterovalent SiC/GaN interfaces

Acta Physics Polonica A88, (1995)

M. Städele | J. A. Majewski | P. Vogl

Stationary lattice mobility of holes in gallium arsenide

J. Appl. Phys. 77, 3232-42 (1995)

Stationary transport of holes in gallium arsenide

in: Quantum Transport in Ultrasmall Devices, Proceedings of NATO ASI, Vol. 342, ed. by D.K. Ferry, H.L. Grubin, C. Jacoboni, A.-P. Jauho (Plenum, New York 1995), p. 465-8 (1995)

Strain relaxation of Ge1-xSix buffer systems grown on Ge (001)

Appl. Phys. Lett. 67 (6), 789-791 (1995)

J. H. Li | V. Holy | G. Bauer | J. F. Nützel | G. Abstreiter

Strained Si1-xGex multi-quantum well waveguide structures on (110) Si

Appl. Phys. Lett. 66 (17), 2226-2228 (1995)

STRUCTURAL AND LUMINESCENCE STUDIES OF STAIN-ETCHED AND ELECTROCHEMICALLY ETCHED GERMANIUM

THIN SOLID FILMS 255 1-2 282-285 (1995)

Superexchange in diluted magnetic semiconductors

Mat. Sci. For., Vols. 182-184, 779 (1995)

J. Blinowski | P. Kacman | J. A. Majewski

Time resolved photoluminescence of spatially direct and indirect transitions in GaAs/

F. Hirler, A. Zrenner, R. Strenz, G. Abstreiter, G. Böhm, and G. Weimann
Phys. Rev. B 51 (8), 5554-5557 (1995)

Time-resolved photoluminescence of pseudomorphic SiGe quantum wells

Phys. Rev. B 52, 16 608-16 611 (1995)

A. Zrenner | B. Fröhlich | J. Brunner | G. Abstreiter

Tip-sample distance control for near-field scanning optical microscopes

Proc. of the SPIE `95, Vol. 2535, Near-Field Optics, 69-81 (1995). (San Diego, 9-10 July 1995)

K. Karraï | R. D. Grober

Transmitted radiation through a subwavelength-sized tapered optical fiber tip

Ultramicroscopy 61, 171-177 (1995) (NFO-3, Brno, Czech Republic, May 9-11, 1995)

C. Obermüller | K. Karraï | G. Kolb | G. Abstreiter

Transport properties of a Si/SiGe quantum point-contact in the presence of impurities

Phys. Rev. B 52, (7), 4704-4707 (1995)

D. Többen | D. A. Wharam | G. Abstreiter | J. P. Kotthaus | F. Schäffler

TRANSPORT-PROPERTIES OF SILOXENE

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 107-110 (1995)

M. ROSENBAUER | A. HOPNER | U. DETTLAFFWEGLIKOWSKA | M. STUTZMANN

TRIPLET EXCITONS IN POROUS SILICON AND SILOXENE

SOLID STATE COMMUNICATIONS 93 6 473-477 (1995)

Tunable laser diodes

Conference on Lasers and Electro-Optics (CLEO)- Pacific Rim, Makuhari, Japan (1995) 108 (invited).

Two-dimensional infrared photonic band gap structure based on porous silicon

Appl. Phys. Lett. 66 (24), 3254-3256 (1995)

U. Grüning | V. Lehmann | C. M. Engelhardt

Ultrafast relaxation of photoexcited carrier in semiconductor quantum wires: A Monte Carlo approach

Phys. Rev. B52, 5183 (1995)

L. Rota | F. Rossi | P. Lugli | E. Molinari

UNTITLED

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 148 2 U1-U1 (1995)

Valley mixing in resonant tunneling diodes with applied hydrostatic pressure

Semicond. Sci. and Techn. 10, 1673 (1995)

A. Di Carlo | P. Lugli

Wannier-Stark localization in superlattices

Jap. J. Appl. Phys. 34, 4519 (1995)

Wavelength tunable laser diodes and their applications

In: Trends in Optical Fibre Metrology and Standards (ed. D.D. Soares) (1995) 217-240.

AN ALTERNATIVE DEGRADATION METHOD FOR AMORPHOUS HYDROGENATED SILICON - THE CONSTANT DEGRADATION METHOD

JOURNAL OF APPLIED PHYSICS 75 5 2507-2515 (1994)

An investigation of carrier dynamics in semiconductor quantum wires following femtosecond laser excitation

L. Rota | F. Rossi | P. Lugli | E. Molinari | 8. (1994)

Angular dispersion of optical phonons in GaAs/AlAs superlattices studied by micro-Raman spectroscopy

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 2. 947-954.

Atomic coherence effects within the sodium D1 manifold. I. Creation of coherence and dressed state analysis

Quantum Opt. (UK) 6, 231 (1994)

Cellular automaton simulations of planar doped barrier field effect transistor in silicon

in: Proc. of Int. Conf. on Computational Electronics, ed. by S.M. Goodnick, Corvallis (OR) (1994) pp 7

A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl

Charge Transfer and Electroabsorption in an Electric Field Tunable Double Quantum Well Structure

Solid State Electronics, Vol. 37, (Nrs. 4-6), 1307-1310 (1994).
(Proc. of the 6th Int. Conf. on Modulated Semiconductor Structures, MSS6, Garmisch-Partenkirchen, August 23 - 27, 1993)

K. Bernhard | A. Zrenner | G. Böhm | G. Tränkle | G. Weimann

Collision effects in the quenching of optical pumping and lasing without inversion: theory and experiment

in: Coherent States: Past, Present, and Future, Eds. D.H. Feng et al. (World Scientific, Singapore, 1994)

Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells

Phys. Rev. Lett. 73 (2), 304-307 (1994)

L. V. Butov | A. Zrenner | G. Abstreiter | G. Böhm | G. Weimann

Confined plasmons in shallow etched quantum wires

Semicond. Sci. Technol. 9, 399-403 (1994)

Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

Appl. Phys. Lett. 65, (20), 2510-2512 (1994)

W. Wegscheider | L. Pfeiffer | K. West | R. E. Leibenguth

Dimensionality Transition in GaAs/GaAlAs Quantum Wire Arrays

Europhys. Lett. 28 (7), 501-506 (1994)

J. Bloch | U. Bockelmann | F. Laruelle

Distribution of light emission from Hot Carriers in GaAs PIN diodes - experiments and Monte Carlo analysis

Semicond. Sci. Technol. 9, 671 (1994)

Effect of Half-space and interface phonons on the transport properties of AlGaAs/GasAs single heterostructures

Phys. Rev. B49, 8178 (1994)

P. Bordone | P. Lugli

Effects of microwave modulation and cyclotron resonance on the luminescence of GaAs/AlGaAs quantum wells and wires

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 2. 1659-1662.

EFFECTS OF PRESSURE ON THE OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE OF WOHLER SILOXENE

PHYSICAL REVIEW B 49 8 5362-5367 (1994)

EFFECTS OF THERMAL ANNEALING ON THE OPTOELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS-GERMANIUM

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 69 2 387-396 (1994)

C. F. O. GRAEFF | M. STUTZMANN | K. EBERHARDT

Electron transport through antidot superlattices in Si/Si0.7Ge0.3 heterostructures

Phys. Rev. B 50, (12), 8853-8856 (1994)

Electronic relaxation in quasi-one- and zero-dimensional structures

Semicond. Sci. Technol. 9, 865-870 (1994)

Evidence for the exciton condensation in coupled quantum wells at high magnetic fields

Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 328-331.

L. V. Butov | A. Zrenner | G. Abstreiter | G. Böhm | G. Weimann

Exciton binding energy in GaAs V-shaped quantum wires

Phys. Rev. Lett. 73, 2899 (1994).

Exciton dynamics in cleaved edge overgrown quantum wires

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 2. 1667-1670.

M. Katz | D. Gershoni | W. Wegscheider | L. N. Pfeiffer | R. A. Logan

Excitonic luminescence from locally grown SiGe wires and dots

Appl. Phys. Lett. 64, (8), 994-996 (1994)

Extended continuous tuning range (over 10 nm) of tunable twin-guide lasers

Conference on Lasers and Electro-Optics (CLEO), Anaheim, USA (1994) paper CWB-1.

T. Wolf | S. Illek | J. Rieger | B. Borchert | M. C. Amann

Fabrication of in-plane-gate transistor structures by focused-laser-beam-induced Zn-doping of modulation-doped GaAs/AlGaAs quantum wells

Appl. Phys. Lett. 64, (5), 592-594 (1994)

Fano Resonances in the excitation spectra of semiconductor quantum wells

Phys. Rev. B 49, (8), 5757-5760 (1994)

D. Y. Oberli | G. Böhm | G. Weimann | J. A. Brum

Far-infrared magneto-optics of high-Tc superconductors

Physica B 197, 624-631 (1994)

H. D. Drew | E. Choi | K. Karraï

Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure

J. Appl. Phys. 76 (6), 3917-3919 (1994)

M. Holzmann | D. Többen | G. Abstreiter | F. Schäffler

FIR-transmission and -photoconductivity studies of shallow etched quantum wires

Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 504-507.

FMCW-LIDAR with tunable twin-guide laser diode

Conference on Industrial Applications of Laser Radar, Frankfurt, Germany (1994) 22-30.

A. Dieckmann | M. C. Amann

High Mobility 2D Hole Gases in Strained Ge Channels in Si Substrates Studied by Magnetotransport and Cyclotron Resonance

Solid State Electronics, Vol. 37, (Nrs. 4-6), 949-952 (1994).
(Proc. of the 6th Int. Conf. on Modulated Semiconductor Structures, MSS6, Garmisch-Partenkirchen, August 23 - 27, 1993)

Hole energy levels and intersubband absorption in modulation-doped Si/Si1-xGex multiple quantum wells

Phys. Rev. B 50, (20), 15 073-15 085 (1994)

Hot phonons in quantum wires: a Monte Carlo investigation

Europhys. Lett. 28, 277 (1994)

L. Rota | J. F. Ryan | F. Rossi | P. Lugli | E. Molinari

HYDROGENATION OF P-TYPE GALLIUM NITRIDE

APPLIED PHYSICS LETTERS 64 17 2264-2266 (1994)

M. S. BRANDT | N. M. JOHNSON | R. J. MOLNAR | R. SINGH | T. D. MOUSTAKAS

Impact ionization and associated light emission phenomena in GaAs devices: A Monte Carlo study

in: Proc. 20th Int. Symp. on GaAs and Related Compounds, Ed. H. S. Rupprecht and G. Weimann, Institute of Physics Publishing Ltd., Bristol, Inst. Phys. Conf. Ser. No. 136, 715 (1994)

G. Zandler | A. Di Carlo | P. Vogl | P. Lugli

Information on the confinement potential in GaAs/AlGaAs wires from magneto- luminescence experiments

Surface Science 305, 591-596 (1994).
(Proc. of the 10th Int. Conf. on Electronic Properties of Two-Dimensional Systems, EP2DS10, Newport, RI, USA, May 31 - June 4, 1993).

In-plane Raman scattering of (001)-Si/Ge superlattices: Theory and experiment

Phys. Rev. B 49, (8), 5406-5414 (1994)

Intersubband absorption in modulation doped p-type Si1-xGex quantum wells: theory and experiment

Superlattices and Microstructures, Vol. 15, (No. 3), 229-232 (1994)
(Proc. of the 7th Int. Conf. on Superlattices, Microstructures and Microdevices (ICSMM-7), Banff, Canada, Aug. 22 - 26, 1994.)

Investigation of quantum states in V-shaped GaAs quantum wires

in: Proc. 20th Int. Symp. on GaAs and Related Compounds, Eds. H.S. Rupprecht and G. Weimann, Institute of Physics Conference Series No 136, London (1994) pp 233

Lateral npn-phototransistors with high gain and high spatial resolution fabricated by focused laser beam induced Zn doping of GaAs/AlGaAs quantum wells

Proc. of the 21st Int. Conf. on Compound Semiconductors, San Diego, USA, September 18 - 22, 1994. Ed.: Herb Goronkin and Umesh Mishra. IOP Publishing Ltd., 1995. 591-596. (Inst. Phys. Conf. Ser. No. 141: Chapter 5).

LATERAL STRUCTURING OF SILICON THIN-FILMS BY INTERFERENCE CRYSTALLIZATION

APPLIED PHYSICS LETTERS 64 23 3148-3150 (1994)

M. HEINTZE | P. V. SANTOS | C. E. NEBEL | M. STUTZMANN

Light emission from ordered group-IV materials:concepts and prospects

in: Quantum Well and Superlattice Physics V (edited by G. H. Doehler, and E. S. Koteles, SPIE, Bellingham, 1994), SPIE Proc. Vol. 2139, pp 168

M. Rieger | P. Vogl | J. A. Majewski

LOCAL VIBRATIONAL-MODES IN MG-DOPED GALLIUM NITRIDE

PHYSICAL REVIEW B 49 20 14758-14761 (1994)

Long-lived excitonic ground states in GaAs/AlAs coupled quantum well structures

Semicond. Sci. Technol. 9, 1983-1988 (1994)
(Proc. of the 8th Winterschool in Mauterndorf, Febr. 14. - 18, 1994)

A. Zrenner | L. V. Butov | M. Hagn

Magneto-optics of two-dimensional hole systems in the extreme quantum limit

Phys. Rev. B 49 (19), 14054-14057 (1994)

L. V. Butov | A. Zrenner | M. Shayegan | G. Abstreiter | H. C. Manoharan

Magnetotransport of Electrons in Arrays of Antidots Imposed upon Si/Si0.7Ge0.3 Heterostructures

Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 480-483.

Monte Carlo simulation of minority carrier transport and light emission phenomena in GaAs devices

Semicond. Sci. Technol. 9, 666 (1994)

G. Zandler | A. Di Carlo | P. Vogl | P. Lugli

Nanometer-resolved photocurrent and local minority carrier transport in GaAs P-N junctions

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 1. 249-252.

G. Zandler | G. Kolb | K. Karraï | G. Abstreiter | P. Vogl

Novel transport simulation of vertically grown MOSFETs by cellular automaton method

in: Proc. Int. Electron Device Meeting 1994, San Francisco, (IEEE, Piscataway, NJ, 1994), pp 351

A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl

OBSERVATIONS ON THE LIMITS TO P-TYPE DOPING IN ZNSE

APPLIED PHYSICS LETTERS 65 8 1001-1003 (1994)

Optical photodetector for near-field optics

Appl. Phys. Lett. 65, (24), 3090-3092 (1994)

G. Kolb | K. Karraï | G. Abstreiter

Optically direct transitions in GaAs/AlAs quantum wire arrays

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 2. 1679-1682.

U. Bockelmann | J. Bloch | F. Laruelle

Phonon scattering between zero-dimensional electronic states: Spatial versus Landau quantization

Phys. Rev. B 50, (23), 17 271 - 17 279 (1994)

Phonons and electron-phonon interaction in GaAs quantum wires

Solid State Electron. 37, 761 (1994)

F. Rossi | C. Bungaro | L. Rota | P. Lugli | E. Molinari

Phonons in semiconductor superlattices studied by in-plane Raman scattering

Philosophical Magazine B, 70, (3), 671-686 (1994). (A collection of papers to 60th birthday of Manuel Cardona.)

R. Schorer | G. Abstreiter

Photo- and electroluminescence in short-period Si/Ge superlattice structures

Semicond. Sci. Technol. 9, 2011-2016 (1994)
(Proc. of the 8th Winterschool in Mauterndorf, Febr. 14. - 18, 1994)

Photoluminescence and two-photon absorption of the biexciton state in a GaAs/AlGaAs single quantum dot

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 3. 1823-1826.

K. Brunner | G. Abstreiter | G. Böhm | G. Tränkle | G. Weimann

PLASMA DAMAGE AND ACCEPTOR PASSIVATION IN D2-PLASMA-TREATED INPZN - A PHOTOLUMINESCENCE AND ELLIPSOMETRY STUDY

PHYSICAL REVIEW B 49 8 5283-5290 (1994)

P. DEMIERRY | P. ETCHEGOIN | M. STUTZMANN

PULSED-LIGHT SOAKING OF HYDROGENATED AMORPHOUS-SILICON

PHYSICAL REVIEW B 50 16 11592-11605 (1994)

M. STUTZMANN | M. C. ROSSI | M. S. BRANDT

Quantum Dots Formed by Interface Fluctuations in AlAs/GaAs Coupled Quantum Well Structures

Phys. Rev. Lett. 72 (21), 3382-3385 (1994)

Raman Scattering by Optical Phonons in Isotopic 70(Ge)n74(Ge)n Superlattices

Phys. Rev. Lett. 72, (10), 1565-1568 (1994)

Relaxation and Radiative Decay of Excitons in GaAs Quantum Dots

Solid State Electronics, Vol. 37, (Nrs. 4-6), 1109-1112 (1994).
(Proc. of the 6th Int. Conf. on Modulated Semiconductor Structures, MSS6, Garmisch-Partenkirchen, August 23 - 27, 1993)

U. Bockelmann | K. Brunner | G. Abstreiter

Resonant inelastic light scattering by inter- and intrasubband excitations in shallow etched quantum dots and wires

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 3. 1831-1834.

Resonant-Raman-scattering study on short-period Si/Ge superlattices

Phys. Rev. B50, (24), 18 211-18 218 (1994)

R. Schorer | G. Abstreiter | H. Kibbel | H. Presting

Second-harmonic generation in asymmetric Si/SiGe quantum wells

Appl. Phys. Lett. 65, (23), 2969-2971 (1994)

Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure

Phys. Rev. Lett. 73, (8), 1138-1141 (1994)

K. Brunner | G. Abstreiter | G. Böhm | G. Tränkle | G. Weimann

Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities

Appl. Phys. Lett. 64, (24), 3320-3322 (1994)

K. Brunner | G. Abstreiter | G. Böhm | G. Tränkle | G. Weimann

Si/Ge and Si/SiGe Heterostructures and Superlattices

Handbook on Semiconductors, Vol. 3A: Materials, Properties and Preparation.
Ed. S. Mahajan. North-Holland, Amsterdam, 1994. 595-656.

K. Eberl | W. Wegscheider

Si/Ge Heterostructures for Device Applications

Proc. of the Int. Conf. on Advanced Microelectronic Devices and Processing (AMDP), March 3-5, 1994, Sendai, Japan. Komiyama Printing Co., Japan 1994. 663-667.

Silicon/Germanium Quantum Structures

Special Issue of Solid State Communications on „Highlights in Condensed-Matter Physics and Materials Science“, 92, (1), 5-10 (1994).

Single-Particle Excitations in Quasi-Zero- and Quasi-One-Dimensional Electron Systems

Phys. Rev. Lett. 73, (22), 3022-3025 (1994)

SPECIAL ISSUE - CARDONA,MANUEL - A COLLECTION OF PAPERS TO CELEBRATE HIS 60TH BIRTHDAY - PREFACE

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 70 3 311-311 (1994)

J. ZEGENHAGEN | C. THOMSEN | M. STUTZMANN | K. SYASSEN

SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON-GERMANIUM ALLOYS

PHYSICAL REVIEW B 49 16 11028-11034 (1994)

C. F. O. GRAEFF | M. STUTZMANN | M. S. BRANDT

State preparation via quantum coherence and continuous measurement

Phys.Rev. A 49, 4077 (1994)

G. S. Agarwal | M. Graf | M. Orszag | M. O. Scully | H. Walther

Systematic Study of Intersubband Absorption in Modulation-Doped p-Type Si/Si1-xGex Quantum Wells

Solid State Electronics, Vol. 37, (Nrs. 4-6), 941-944 (1994).
(Proc. of the 6th Int. Conf. on Modulated Semiconductor Structures, MSS6, Garmisch-Partenkirchen, August 23 - 27, 1993)

Theory of Zener tunneling and Stark ladders in semiconductors

Semicond. Sci. Technol. 9, 497 (1994)

A. Di Carlo | P. Vogl

Theory of Zener tunneling and Wannier-Stark states in semiconductors

Phys. Rev. B 50, 8358 (1994)

A. Di Carlo | P. Vogl | W. Pötz

Transport simulations of ultrashort planar doped barrier field effect transistors

in: Proc. 24th European Solid State Device Research Conference, Ed.: C. Hill and P. Ashburn, Edition Frontieres, Gif-sur-Yvette Cedex - France, 1994, pp 775

A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl

Tunable lasers and their uses

Summer School on Trends in Optical Fibre Metrology and Standards, Viana do Castelo, Portugal (1994).

Tunable semiconductor lasers

European Conference on Optical Communications (ECOC), Florenz, Italy (1994) 1011-1018 (invited).

Vertically integrated Mach-Zehnder interferometer (VMZ) widely tunable laser diode with improved wavelength access

Electronics Letters 30 (1994) 2047-2049.

B. Borchert | S. Illek | T. Wolf | J. Rieger | M. C. Amann

Vibrational Properties of Isotopic 70Gen74Gen Superlattices

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 2. 971-974.

Vibrational Properties of Si/Ge Superlattices: Theory and in-plane Raman Scattering Experiments

Solid State Electronics, Vol. 37, (Nrs. 4-6), 757-760 (1994).
(Proc. of the 6th Int. Conf. on Modulated Semiconductor Structures, MSS6, Garmisch-Partenkirchen, August 23 - 27, 1993)

Wide range tunable lasers for WDM applications

Optoelectronics Conference (OEC), Makuhari Messe, Japan (1994) 208-209 (invited).

Widely tunable laser diodes with improved wavelength access

IEEE International Semiconductor Laser Conference (ISLC), Maui, USA (1994) paper PD-12.

M. C. Amann | B. Borchert | S. Illek | E. Veuhoff | T. Wolf

A comparison of Monte Carlo and cellular automata approaches for semiconductor device simulation

IEEE Electron Device Lett. EDL 14, 77 (1993)

G. Zandler | A. Di Carlo | K. Kometer | P. Lugli | P. Vogl

A Monte Carlo method for the study of nonequilibrium phenomena in low dimensional semiconductor structures

Proc. of Int. Conf. on Computational Electronics, Eds. C.M. Snowden and M.J. Howes, p. 236, Leeds (1993)

L. Rota | F. Rossi | P. Lugli | E. Molinari

ACCELERATED HYDROGEN MIGRATION UNDER STEADY-STATE AND PULSED ILLUMINATION IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 273-276 (1993)

P. V. SANTOS | M. S. BRANDT | R. A. STREET | M. STUTZMANN

Broadband tunable laser diodes using codirectional mode coupling

European Conference on Integrated Optics (ECIO), Neuchatel, Switzerland (1993) paper 7-1.

Can cellular automata methods compete with Monte Carlo semiconductor device simulations?

Proc. 23rd European Solid State Device Research Conference 1993, Eds.: J. Borel, P. Gentil, J. P. Noblanc, A. Nouailhat, M. Verdone, Edition Frontieres, Gif-sur-Yvette Cedex, France, p. 21 (1993)

G. Zandler | A. Rein | M. Saraniti | P. Vogl | P. Lugli

Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells

J. de Physique IV, Vol. 3 ,167-170 (1993).
(Proc. of the 3rd Int. Conf. on Optics of Excitons in Confined Systems, OECS, Montpellier, Aug. 30 - Sept. 2, 1993)

L. V. Butov | A. Zrenner | G. Abstreiter | G. Böhm | G. Weimann

Dead space effects in the near breakdown regime of AlGaAs/GaAs HBTs

IEEE Electr. Dev. Lett. EDL 14, 103 (1993)

A. Di Carlo | P. Lugli

Density matrix theory of coherent phonon oscillations in germanium

Phys. Rev. B 47, 16229-36 (1993)

R. Scholz | T. Pfeifer | H. Kurz

Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers

J. Vac. Sci. Technol. B 11 (3), 1056-1063 (1993)

W. Wegscheider | H. Cerva

Electric field induced ?-? transition in GaAs-AlAs coupled quantum well structures

J. de Physique IV, Vol. 3, 229-232 (1993). (Proc. of the 3rd Int. Conf. on Optics of Excitons in Confined Systems, OECS, Montpellier, Aug. 30 - Sept. 2, 1993)

M. Hagn | A. Zrenner | G. Böhm | G. Weimann

Electro- and photoluminescence studies from ultrahin SimGen superlattices

J. Vac. Sci. Technol. B 11 (3) , 1110-1114 (1993)

H. Presting | U. Menczigar | H. Kibbel

ELECTRONIC AND STRUCTURAL-PROPERTIES OF POROUS SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 931-936 (1993)

ELECTRONIC DEFECTS IN SILICON INDUCED BY DEUTERIUM PLASMA TREATMENT

SOLID STATE COMMUNICATIONS 86 7 421-424 (1993)

D. DIMOVAMALINOVSKA | M. STUTZMANN

Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates

Phys. Rev. B 48 (19), 14276 (1993)

Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates - Erratum

Phys. Rev. B 50, 8138 (1994)

Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)n superlattices

Phys. Rev. B47, (7), 4099-4102 (1993)

Enhanced Band-gap Luminescence in strain-symmetrized (Si)m/(Ge)n Superlattices

Mat. Res. Soc. Symp. Proc., 298, 33-44 (1993). "Silicon-Based Optoelectronic Materials". Eds.: M. A. Tischler, R. T. Collins, M. L. W. Thewalt and G. Abstreiter. MRS, Pittsburg, 1993.

U. Menczigar | G. Abstreiter | H. Kibbel | H. Presting | E. Kasper

Exciton relaxation and radiative recombination in semiconductor quantum dots

Phys. Rev. B48, (23), 17637-17640 (1993)

Extrem low contact resistivity of Ti/Pt/Au contacts on p+-InGaAs as determined by a new evaluation method

Journal of the Electrochemical Society 140 (1993) 847-850.

G. Franz | M. C. Amann

High mobility two-dimensional electron gases in Si/Si1-xGex heterostructures grown by MBE

J. of Crystal Growth 127, 421-424 (1993)

High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

Acta Physica Polonica A 84, (3), 475-489 (1993).
(Proc. of the XXII Int. School of Semiconducting Compounds, 1993, Jaszowiec.)

High-quality two-dimensional electron system confined in an AlAs quantum well

Appl. Phys. Lett. 62 (24), 3120-3122 (1993)

How to convert group-IV semiconductors into light emitters

Physica Scripta T49, 476 (1993)

P. Vogl | M. Rieger | J. A. Majewski | G. Abstreiter

How to Convert Group-IV Semiconductors into Light Emitters

Physica Scripta T49, 476-482 (1993)
(Proc. of 13th EPS, Regensburg, March 19 - April 2, 1993)

P. Vogl | M. M. Rieger | J. A. Majewski | G. Abstreiter

Impact ionization and breakdown mechanisms in III-V devices: Heterojunction bipolar transitors

Alta Frequenza 5, 15-24 (1993)

Impact ionization and light emission phenomena in AlGaAs/GaAs HBTs

Inst. Phys. Conf. Ser. No 129 (1993) 717

Inelastic scattering and thermalization in low dimensional III-V semiconductor structures

Confined Electrons and Photons: New Physics and Applications, Erice, Italy, July 13-26 (1993). Eds.: E. Burstein and C. Weisbuch. Plenum Press, New York 1995. 325-338. (NATO ASI Ser.:B; Vol. 340).

Influence of growth conditions on the photoluminescence of pseudomorphic MBE grown

J. Brunner, U. Menczigar, M. Gail, E. Friess, and G. Abstreiter
J. of Crystal Growth 127, 443-446 (1993)

Interface mode in Si/Ge superlattices: Theory and experiments

Phys. Rev. B 48, (12), 8959-8962 (1993)

S. D. Gironcoli | E. Molinari | R. Schorer | G. Abstreiter

Intersubband Absorption in Modulation Doped p-type Si/Si1-xGex Quantum Wells:

T. Fromherz, E. Koppensteiner, M. Helm, G. Bauer, J. F. Nützel, and G. Abstreiter
Proc. of the 5th Int Conf. on Solid State Devices and Materials (SSDM’93),
Aug. 29 - Sept. 1, 1993, Chiba, Japan. 410-412.

Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement

Applied Surface Science 63, 260-265 (1993)

H. D. Geiler | S. Krügel | J. Nützel | E. Friess | G. Abstreiter

Laser diodes and integrated optoelectronic circuits for fiber optical applications

European Trans. Telecommun. 4 (1993) 599-614 (invited).

T. Wolf | M. C. Amann | H. Albrecht

LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

APPLIED PHYSICS LETTERS 62 23 3001-3003 (1993)

C. F. O. GRAEFF | R. BUHLEIER | M. STUTZMANN

LIGHT-SCATTERING BY ACOUSTIC PHONONS IN UNHYDROGENATED AND HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 927-930 (1993)

E. BUSTARRET | C. THOMSEN | M. STUTZMANN | A. ASANO | C. SUMMONTE

LUMINESCENCE AND OPTICAL-PROPERTIES OF SILOXENE

JOURNAL OF LUMINESCENCE 57 1-6 321-330 (1993)

Luminescence Studies of Confined Excitons in Pseudomorphic Si/SiGe Quantum Wells Grown by Solid Source Molecular Beam Epitaxy

J. Vac. Sci. Technol. B 11, (3), 1097-1100 (1993)

J. Brunner | J. Nützel | M. Gail | U. Menczigar | G. Abstreiter

Luminescence studies of MBE grown Si/SiGe quantum wells

Mat. Res. Soc. Symp. Proc., 298, 21-26 (1993). "Silicon-Based Optoelectronic Materials". Eds.: M. A. Tischler, R. T. Collins, M. L. W. Thewalt and G. Abstreiter. MRS, Pittsburg, 1993.

M. Gail | J. Brunner | U. Menczigar | A. Zrenner | G. Abstreiter

Micro-Raman scattering in ultrathin layer superlattices: evidence of zone centre anisotropy of optical phonons

Phys. Rev. B47, (3), 1483-1488 (1993)

Microscopic analysis of noise and nonlinear dynamics in p-type germanium

Phys. Rev. B 48, 1478 (1993)

T. Kuhn | G. Hüpper | W. Quade | A. Rein | E. Schöll

Microscopic analysis of the electrostatic phonon potential in rectangular quantum wires

in: Ultrashort Processes in Condensed Matter, ed. by W.E.Bron, Plenum Press, New York, (1993) pp. 376

C. Bungaro | P. Lugli | F. Rossi | L. Rota | E. Molinari

MICROSCOPIC ORIGIN AND ENERGY-LEVELS OF THE STATES PRODUCED IN A-SI-H BY PHOSPHORUS DOPING

PHYSICAL REVIEW B 47 20 13283-13294 (1993)

J. KOCKA | J. STUCHLIK | M. STUTZMANN | L. CHEN | J. TAUC

Monte Carlo models and simulations

in: Compound Semiconductor Devices Modelling, Eds. C.M. Snowden and R.E. Miles, Springer, Heidelberg (1993) pp. 210-231

P. Lugli

Nonlinear and chaotic oscillations in semiconductors under influence of a transverse magnetice field: The dynamic Hall Effect

Mod. Phys. Lett. B 6, 1001 (1993)

G. Hüpper | E. Schöll | A. Rein

Novel trends in semiconductor lasers

CCTE meeting, Venedig, Italy (1993) (invited).

Phonons in thin GaAs/AlAs nanostructures: from two-dimensional to one-dimensional systems

Phonons in Semiconductor Nanostructures, edited by J.-P. Leburton et al., p. 39, Kluwer Academic Publishers (1993)

E. Molinari | C. Bungaro | F. Rossi | L. Rota | P. Lugli

Photoluminescence from GaAs/AlGaAs quantum wires and quantum dots

J. de Physique IV, Vol. 3, 107-114 (1993).
(Proc. of the 3rd Int. Conf. on Optics of Excitons-Confined Systems, OECS, Montpellier, Aug. 30 - Sept. 2, 1993)

Photoluminescence lineshape of narrow n-type modulation-doped quantum wells

Semicond. Sci. Technol. 8, 88-91 (1993)

R. Küchler | G. Abstreiter | G. Böhm | G. Weimann

Physics and Perspectives of Si/Ge Heterostructures and Superlattices

Physica Scripta T49, 42-45 (1993)
(Proc. of 13th EPS, Regensburg, March 19 - April 2, 1993)

POROUS SILICON AND SILOXENE - VIBRATIONAL AND STRUCTURAL-PROPERTIES

PHYSICAL REVIEW B 48 11 8172-8183 (1993)

Properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation

Materials Science and Engineering B17, 82-86 (1993)

S. Koynov | R. Schwarz | T. Fischer | R. Schorer

Properties of Sn/Ge superlattices

Semicond. Sci. Technol. 8, S6-S8 (1993)

G. Abstreiter | J. Olajos | R. Schorer | P. Vogl | W. Wegscheider

PROPERTIES OF SPUTTERED A-SIOX-H ALLOYS WITH A VISIBLE LUMINESCENCE

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 1089-1092 (1993)

Raman scattering of *-Sn/Ge superlattices on Ge (001)

J. Vac. Sci. Technol. B 11 (3), 1069-1072 (1993)

R. Schorer | W. Wegscheider | G. Abstreiter

Recent progress on wavelength tunable laser diodes

GaAs-Conference, Freiburg, Germany (1993) paper WE 16 (invited).

Reduced effective linewidth enhancement factor ?eff of complex-coupled DFB lasers with absorptive gratings

Electronics Letters 29 (1993) 1367-1369.

T. W. Johannes | M. C. Amann | B. Borchert

Role of interface optical phonons in cooling hot carriers in GaAs-AlAs quantum wells

Phys. Rev. B 47 (12), 7630-7633 (1993)

D. Y. Oberli | G. Böhm | G. Weimann

Semiconductor light sources

Optical Properties of Semiconductors (Kluwer ed. G. Martinez) (1993) 291-320.

Sn and Sb segregation and their possible use as surfactant for short-period Si/Ge superlattices

J. of Crystal Growth 127, 440-442 (1993)

Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots

G. Weimann
Semicond. Sci. Technol. 8, 617-621 (1993)

SPIN-DEPENDENT PHOTOCONDUCTIVITY AS A FUNCTION OF WAVELENGTH - A TEST FOR THE CONSTANT PHOTOCURRENT METHOD IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 547-550 (1993)

SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 15-18 (1993)

C. F. O. GRAEFF | M. S. BRANDT | K. EBERHARDT | I. CHAMBOULEYRON | M. STUTZMANN

SPIN-DEPENDENT TRANSPORT IN AMORPHOUS-SILICON NIN-STRUCTURES

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 693-696 (1993)

M. S. BRANDT | M. STUTZMANN | J. KOCKA

TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN POROUS SILICON AND RELATED MATERIALS

JOURNAL OF LUMINESCENCE 57 1-6 153-157 (1993)

M. ROSENBAUER | M. STUTZMANN | H. D. FUCHS | S. FINKBEINER | J. WEBER

TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON - COMMENT

APPLIED PHYSICS LETTERS 63 4 565-566 (1993)

M. ROSENBAUER | H. FUCHS | M. STUTZMANN

The effect of spatial correlation on the linewidth broadening in tunable laser diodes

IEEE Journal of Quantum Electronics 29 (1993) 1799-1804.

Theoretical study of polarization effects in laterally modulated quantum wells

Acta Physica Polonica A 84, (3), 505-513 (1993).
(Proc. of the XXII Int. School of Semiconducting Compounds, 1993, Jaszowiec.)

TRANSIENT PHOTOLUMINESCENCE DECAY IN POROUS SILICON AND SILOXENE

JOURNAL OF LUMINESCENCE 57 1-6 231-234 (1993)

S. FINKBEINER | J. WEBER | M. ROSENBAUER | M. STUTZMANN

Tunable laser diodes and their applications

Optical Fiber Conference (OFC), San Jose, USA (1993) tutorial session-paper FG.

Tunable laser diodes utilizing transverse tuning scheme

IEEE Journal of Lightwave Technology 11 (1993) 1168-1182 (invited).

M. C. Amann | S. Illek

Tunable twin-guide (TTG) distributed feedback (DFB) laser with over 10 nm continuous tuning range

Electronics Letters 29 (1993) 2124-2125.

T. Wolf | S. Illek | J. Rieger | B. Borchert | M. C. Amann

Tuning range and spectral selectivity of the distributed forward coupled (DFC) laser

IEEE Photonics Technology Letters 5 (1993) 886-888.

M. C. Amann | B. Borchert | S. Illek | T. Wolf

Widely tunable distributed forward coupled (DFC) laser

Electronics Letters 29 (1993) 793-794.

M. C. Amann | B. Borchert | S. Illek | T. Wolf

A COMMENT ON THERMAL DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON

PHILOSOPHICAL MAGAZINE LETTERS 66 3 147-150 (1992)

ACCELERATED STABILITY TEST FOR AMORPHOUS-SILICON SOLAR-CELLS

APPLIED PHYSICS LETTERS 60 14 1709-1711 (1992)

M. C. ROSSI | M. S. BRANDT | M. STUTZMANN

Accurate method to evaluate the contact resistivity of Ti/Pt/Au contacts on p+-InGaAs

Proc. Symp. on Logic and Functional Devices for Photonics, Toronto, Canada (1992) 120-125.

G. Franz | M. C. Amann

Angular dispersion of GaAs optical phonons in GaAs/AlAs superlattices

Phonons in Semiconductor Nanostructures, St.Feliu de Guixols, 15.-18. Sept. 1992. Eds.: J.P. Leburton, J. Pascual, C.M. Sotomayor-Torres. Kluwer Academic Publishers, Dordrecht 1993. 93-101. (NATO ASI Ser.: E; 236).

M. Haines | G. Scamarcio

Band gap luminescence in pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy

Thin Solid Films 222, 27-29 (1992)

J. Brunner | U. Menczigar | M. Gail | E. Friess | G. Abstreiter

Band-gap of strain-symmetrized, short-period Si/Ge superlattices

Phys. Rev. B 46, (19), 12 857 - 12 860 (1992)

Boron-Doped Silicon/Germanium Superlattices and Heterostructures

Thin Solid Films 222, 150-153 (1992)

J. F. Nützel | F. Meier | E. Friess | G. Abstreiter

Dissertation: Kurzzeit-Dynamik von Randfeldern und koh?rente Phononen in III-V-Materialien

in: Aachener Beitr?ge zur Physik der Kondensierten Materie, Vol. 1, ed. by B.U. Felderhof, P. Grosse, A. Stahl, D. Vollhardt (Verlag der Augustinus Buchhandlung, Aachen) (1992)

Douple wavelength selective GaAs/AlGaAs infrared detector device

Appl. Phys. Lett. 60, (16), 2011-2013 (1992)

Electron intersubband absorption in modulation and well-doped Si/Si1-xGex multiple quantum wells

Thin Solid Films, 222, 20-23 (1992)

H. Hertle | F. Schäffler | A. Zrenner | E. Gornik | G. Abstreiter

Electron relaxation in quantum dots by means of Auger processes

Phys. Rev. B46, Nr. 23, 15 574-15 577 (1992)

U. Bockelmann | T. Egeler

Electronic coherence effects in absorption saturation experiments

phys. stat. sol. (b) 173, 199-209 (1992)

R. Scholz | A. Stahl

Electronic structure and optical properties of short-period ?-SnnGen superlattices

Surface Science 267, 83-86 (1992)

P. Vogl | J. Olajos | W. Wegscheider | G. Abstreiter

Engineering the future of electronics

Physics World, Vol.5, (3), 36-39 (March 1992)

EXCITONIC STATES IN HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 141 1-3 97-105 (1992)

M. STUTZMANN | M. S. BRANDT

Fabrication and properties of epitaxially stabilized Ge/*-Sn heterostructures on Ge(001).

J. of Crystal Growth 123, 75-94 (1992)

W. Wegscheider | J. Olajos | U. Menczigar | W. Dondl | G. Abstreiter

Fully engineered coherent multichannel transmitters and receivers using data-induced polarization switching

Optical Fiber Conference (OFC), San Jose, USA (1992) paper-FC-3.

M. C. Amann | et al.

Generation and detection of coherent optical phonons in germanium

Phys. Rev. Lett. 69, 3248-51 (1992)

T. Pfeifer | W. Kütt | H. Kurz | R. Scholz

High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer

Semicond. Sci. Technol. 7, 260-266 (1992)

F. Schäffler | D. Többen | H. J. Herzog | G. Abstreiter | B. Holländer

Indirect excitons in coupled quantum well structures

J.P. Harbison
Surface Science, 263, 496-501 (1992)

Inelastic light scattering of electronic excitations in quantum wells

Intersubband Transitions in Quantum Wells. Eds.: E. Rosench, B. Vinter and B. Levine. Plenum Press, N.Y., 1992. 261-262. (NATO ASI Ser.: B; 288).

Influence of optical phonon emission by holes on hot CW-luminescence linewidth

Solid State Commun. 83, 93-5 (1992)

In-plane Raman scattering of [001]-grown Si/Ge superlattices

Thin Solid Films, 222, 269-273 (1992)

Interband absorption in ?-Sn/Ge short-period superlattices

Appl. Phys. Lett. 61 (26), 3130-3132 (1992)

J. Olajos | W. Wegscheider | G. Abstreiter

Interband absorption in quantum wires. I. Zero-magnetic-field case

Phys. Rev. B45, (4), 1688-1699 (1992)

U. Bockelmann | G. Bastard

Interband absorption in quantum wires. II. Nonzero-magnetic-field case

Phys. Rev. B45, (4), 1700-1704 (1992)

U. Bockelmann | G. Bastard

Interface-phonon dispersion and confined-optical-mode selection rules of GaAs/AlAs superlattices studied by micro-Raman spectroscopy

Phys. Rev. B46, Nr. 7, 4071-4076 (1992)

Intersubband absorption in the conduction band of Si/Si1-xGex multiple quantum wells

Intersubband Transitions in Quantum Wells. Eds.: E. Rosencher, B. Vinter and B. Levine. Plenum Press, N.Y. 1992. 253-260. (NATO ASI Ser.: B; 288)

H. Hertle | F. Schäffler | A. Zrenner | E. Gornik | G. Abstreiter

Luminescence Properties of GaAs Quantum Wells, Wires, Dots and Antidots

Optical Phenomena in Semiconductor Structures of Reduced Dimensions, Yountville, CA, USA, July 27-31, 1992. Eds.: D. J. Lockwood and A. Pinczuk Kluwer Academic Publishers, Dordrecht 1993. 327-335. (NATO ASI Ser.: E; 248).

Magneto-Luminescence and Magneto-Luminescence Excitation Spectroscopy in Strained Layer Heterostructures

Solid-State Science 101: High Magnetic Fields in Semiconductor Physics III.
Ed.: G. Landwehr. Springer-Verlag, Berlin 1992. 514-518.

Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1-xGex heterostructures

Phys. Rev. B46, (7), 4344-4347 (1992)

D. Többen | F. Schäffler | A. Zrenner | G. Abstreiter

Magnetotransport studies of remote doped Si/Si1-xGex heterostructures grown on relaxed SiGe buffer layers

Thin Solid Films, 222, 15-19 (1992)

D. Többen | F. Schäffler | A. Zrenner | G. Abstreiter

NEW GROWTH TECHNIQUE FOR LUMINESCENT LAYERS ON SILICON

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 54 6 567-569 (1992)

Nonequilibrium optical phonons in GaAs-AlAs quantum wells

Phonons in Semiconductor Nanostructures, St.Feliu de Guixols, 15.-18. Sept. 1992. Eds.: J.P. Leburton, J. Pascual, C.M. Sotomayor-Torres. Kluwer Academic Publishers, Dordrecht 1993. 221-231. (NATO ASI Ser.: E; 236).

D. Y. Oberli

Observation of Interface Plasmon Modes in (GaAl)As Heterostructures by Raman Spectroscopy

Proc. of 21th Int. Conf. on the Physics of Semiconductors, Beijing, China, August 10-14, (1992). Eds.:Ping Jiang and Hou-Zhi Zheng.World Scientific,Singapore 1992.Vol. 1.769-772.

M. Haines | T. Egeler | G. Abstreiter | G. Böhm | G. Weimann

Optical characterization of GaAs/AlGaAs nanostructures fabricated by focussed laser beam induced thermal interdiffusion

Surface Science 267, 218-222 (1992)

K. Brunner | G. Abstreiter | M. Walther | G. Böhm | G. Tränkle

Optical Properties of Electric Field Tunable Quantum Well Structures

Festkörperprobleme (Advances in Solid State Physics) 32, 61-80 (1992). Ed.: U. Rössler. Vieweg, Braunschweig, 1992.

A. Zrenner

Optical transitions in strained Ge/Si superlattices

Thin Solid Films 222, 246-250 (1992)

Optical transitions in strained Ge/Si superlattices

W. Wegscheider, and G. Abstreiter
Phys. Rev. B45, (12), 6793-6801 (1992)

Phase noise limited resolution of coherent LIDAR using widely tunable laser diodes

Electronics Letters 28 (1992) 1694-1696.

Phonon scattering and relaxation properties of lower dimensional electron gases

Intersubband Transitions in Quantum Wells.
Eds.: E. Rosencher, B. Vinter and B. Levine. Plenum Press, N.Y. 1992. 105-118.
(NATO ASI Ser.: B; 288)

Phosphorous doping in low temperature silicon molecular beam epitaxy

Appl. Phys. Lett. 60, (18), 2237-2239 (1992)

E. Friess | J. Nützel | G. Abstreiter

Photoluminescence from a Single GaAs/AlGaAs Quantum Dot

Phys. Rev. Lett. 69, (22), 3216-3219 (1992)

Photoluminescence studies of Si/Si1-xGex quantum wells and SimGen superlattices

Thin Solid Films, 222, 227-233 (1992)

Ramanscattering in Semiconductor Microstructures

Proc. of the 13th Int. Conf. on Raman Spectroscopy, Würzburg, 31 August-4 September, 1992. Eds.: W. Kiefer, M. Cardona, G. Schaack, F. W. Schneider, H. W. Schrötter. John Wiley & Sons, Chichester 1992. 9-12.

Relaxation of hot carriers in semiconductor nanostructures

Phonons in Semiconductor Nanostructures, St.Feliu de Guixols, 15.-18. Sept. 1992. Eds.: J.P. Leburton, J. Pascual, C.M. Sotomayor-Torres. Kluwer Academic Publishers, Dordrecht 1993. 415-426. (NATO ASI Ser.: E; 236).

Sharp Doping profiles and two-dimensional electron systems in Ge based heterostructures

Surface Science 267, 90-93 (1992)

J. Wilhelm | W. Wegscheider | G. Abstreiter

Si/Ge Heterostructures and Superlattices: Bandstructure, Optical and Electronic Properties

Proc. of the 7th Int. Winter School Mauterndorf, Austria, February 24-28, 1992.
Solid-State Sciences 111: Low-Dimensional Electronic Systems. Eds.: G. Bauer, F. Kuchar and H. Heinrich. Springer-Verlag, Berlin 1992. 323-332.

Silicon based heterostructures, quantum wells and superlattices

Proc. of 21th Int. Conf. on the Physics of Semiconductors, Beijing, China, August 10-14, (1992). Eds.: Ping Jiang and Hou-Zhi Zheng. World Scientific, Singapore 1992. Vol. 1. 827-834.

SILOXENE - CHEMICAL QUANTUM CONFINEMENT DUE TO OXYGEN IN A SILICON MATRIX

PHYSICAL REVIEW LETTERS 69 17 2531-2534 (1992)

P. DEAK | M. ROSENBAUER | M. STUTZMANN | J. WEBER | M. S. BRANDT

Spatially direct and indirect optical transitions in GaAs/AlGaAs nanostructures of different dimensionalities

Proc. of 21th Int. Conf. on the Physics of Semiconductors, Beijing, China, August 10-14, (1992). Eds.: Ping Jiang and Hou-Zhi Zheng. World Scientific, Singapore 1992. Vol. 2. 1104-1107.

Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs quantum wires

G. Weimann
Surface Science 263, 536-540 (1992)

Spectral linewidth of tunable laser diodes

European Conference on Optical Communications (ECOC), Berlin, Germany (1992) 737-744 (invited).

M. C. Amann | B. Borchert

Spectral linewidth of tunable twin-guide laser diodes

Archiv für Elektronik und Übertragungstechnik (AEÜ) 46 (1992) 63-72.

M. C. Amann | B. Borchert

SPIN-DEPENDENT EFFECTS IN POROUS SILICON

APPLIED PHYSICS LETTERS 61 21 2569-2571 (1992)

Subpicosecond hot luminescence in III-V compounds

IEEE J. Quantum Electron. 28, 2473-85 (1992)

R. Scholz | A. Stahl | X. C. Zhou | K. Leo | H. Kurz

Temperature Distribution in Si-MOSFET's Studied by Micro Raman Spectroscopy

IEEE Transactions on Electron Devices 39, (4), 858-863 (April 1992)

R. Ostermeir | K. Brunner | G. Abstreiter | W. Weber

THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION

SOLID STATE COMMUNICATIONS 81 4 307-312 (1992)

M. S. BRANDT | H. D. FUCHS | M. STUTZMANN | J. WEBER | M. CARDONA

Tunable twin-guide laser diodes with metal-clad ridge waveguide (MCRW) structure for coherent optical communications

European Trans. Telecommun. 3 (1992) 517-522.

T. Wolf | H. Westermeier | M. C. Amann

VISIBLE LUMINESCENCE FROM POROUS SILICON AND SILOXENE

PHYSICA SCRIPTA T45 309-313 (1992)

VISIBLE LUMINESCENCE FROM SILICON

FESTKORPERPROBLEME - ADVANCES IN SOLID STATE PHYSICS 32 32 179-197 (1992)

VISIBLE-LIGHT EMISSION AT ROOM-TEMPERATURE FROM ANODIZED PLASMA-DEPOSITED SILICON THIN-FILMS

APPLIED PHYSICS LETTERS 61 13 1552-1554 (1992)

Zone Centre Anisotropy of Optical Phonons in Ultra-Thin Layer Superlattices Observed by Micro-Raman Spectroscopy

Proc. of 21th Int. Conf. on the Physics of Semiconductors, Beijing, China, August 10-14, (1992). Eds.: Ping Jiang and Hou-Zhi Zheng. World Scientific, Singapore 1992. Vol. 1. 863-866.

A COMPARISON OF HYDROGEN INCORPORATION AND EFFUSION IN DOPED CRYSTALLINE SILICON, GERMANIUM, AND GALLIUM-ARSENIDE

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 53 1 47-53 (1991)

M. STUTZMANN | J. B. CHEVRIER | C. P. HERRERO | A. BREITSCHWERDT

ACCELERATED METASTABLE DEFECT CREATION IN A-SI-H BY SHORT LIGHT-PULSES

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 231-234 (1991)

M. STUTZMANN | J. NUNNENKAMP | M. S. BRANDT | A. ASANO | M. C. ROSSI

Band structure, quantum confinement, and exchange splitting in Sc1-xErxAs epitaxial layers buried in GaAs

Phys. Rev. B43, (12), 9599-9609 (1991)

S. J. Allen | J. | F. DeRosa | C. J. Palmstrøm | A. Zrenner

BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON

PHYSICAL REVIEW B 43 2 1555-1575 (1991)

C. P. HERRERO | M. STUTZMANN | A. BREITSCHWERDT

Broadband electronic wavelength tuning by codirectionally coupled twin-guide laser diode

European Conference on Optical Communications (ECOC), Paris, France (1991) 21-24.

S. Illek | W. Thulke | B. Borchert | M. C. Amann

Codirectionally coupled twin-guide laser diode for broadband electronic wavelength tuning

Electronics Letters 27 (1991) 2207-2208.

S. Illek | W. Thulke | M. C. Amann

Comparison of Growth and Strain Relaxation of Si/Ge Superlattices under Compressive and Tensile Strain Field

Mat. Res. Soc. Symp. Proc., Vol. 220, 135-140 (1991). "Silicon Molecular Beam Epitaxy". Eds.: J.C. Bean, S.S. Iyer and K.L. Wang. MRS, Pittsburg, 1991.

W. Wegscheider | K. Eberl | G. Abstreiter | H. Cerva | H. Oppolzer

COMPOSITIONAL DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA IN HYDROGENATED AMORPHOUS SILICON-SULFUR ALLOYS

JOURNAL OF LUMINESCENCE 48-9 641-644 (1991)

DEPTH PROFILING OF DEFECTS IN A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 623-626 (1991)

A. ASANO | M. STUTZMANN

DEPTH PROFILING OF NONUNIFORM OPTICAL-ABSORPTION IN THIN-FILMS - APPLICATION TO HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF APPLIED PHYSICS 70 9 5025-5034 (1991)

A. ASANO | M. STUTZMANN

ELECTRONIC LEVELS OF PHOSPHORUS DONORS IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 379-382 (1991)

J. KOCKA | J. STUCHLIK | M. STUTZMANN | L. CHEN | J. TAUC

Electronic properties of quantum-dot superlattices

Phys. Rev. B43, (14), 12082-12085 (1991)

J. A. Brum

ELECTRONIC-PROPERTIES OF A-SI,S-H AND A-SI,SE-H ALLOYS

SOLAR ENERGY MATERIALS 23 2-4 334-339 (1991)

EXCITONS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON

APPLIED PHYSICS LETTERS 58 15 1620-1622 (1991)

EXPLOSIVE ISOTHERMAL HYDROGEN EXODIFFUSION IN VHF-GD A-SI-H THICK LAYERS

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 53-56 (1991)

E. BUSTARRET | M. BRANDT | M. STUTZMANN | M. FAVRE

FAST METASTABLE-DEFECT CREATION IN AMORPHOUS-SILICON BY FEMTOSECOND LIGHT-PULSES

PHYSICAL REVIEW LETTERS 67 17 2347-2350 (1991)

M. STUTZMANN | J. NUNNENKAMP | M. S. BRANDT | A. ASANO

Generation of LO-phonons in a time-dependent electric field at the surface of III-V materials

phys. stat. sol. (b) 168, 123-38 (1991)

R. Scholz | A. Stahl

Group IV Element (Si, Ge and ?-Sn) Superlattices - Low Temperature MBE

J. of Crystal Growth 111, 882-888 (1991)

K. Eberl | W. Wegscheider | G. Abstreiter

HIGH BAND-GAP HYDROGENATED AMORPHOUS SILICON-SELENIUM ALLOYS

JOURNAL OF APPLIED PHYSICS 70 9 4926-4930 (1991)

High Electron Mobility in Modulation-Doped Si/SiGe Quantum Well Structures

Appl. Phys. Lett. 59, (25), 3318-3320 (1991)

G. Schuberth | F. Schäffler | M. Besson | G. Abstreiter | E. Gornik

High Resolution Imaging of Twin Intersections in Si/Ge Superlattices on Ge (001) Substrates

Proc. of the 7th Int. Conf. on Microscopy of Semiconducting Materials, Oxford, March 25-28, 1991. IOP Publishing Ltd, 1991. 21-26. (Inst. Phys. Conf. Ser. 117; Section 1).)

W. Wegscheider | K. Eberl | G. Abstreiter | H. Cerva | H. Oppolzer

HYDROGEN IN SEMICONDUCTORS - BULK AND SURFACE-PROPERTIES - PROCEEDINGS OF THE 6TH TRIESTE IUPAP-ICTP SEMICONDUCTOR SYMPOSIUM INTERNATIONAL-CENTER-FOR-THEORETICAL-PHYSICS TRIESTE, ITALY, 27-31 AUGUST 1990 - INTRODUCTION

PHYSICA B 170 1-4 R8-R9 (1991)

J. CHEVALLIER | M. STUTZMANN

HYDROGEN PASSIVATION AND REACTIVATION OF SHALLOW ZN ACCEPTORS IN GAAS

APPLIED SURFACE SCIENCE 50 1-4 390-394 (1991)

A. W. R. LEITCH | T. PRESCHA | M. STUTZMANN

HYDROGENATION OF INAS ON GAAS HETEROSTRUCTURES

JOURNAL OF APPLIED PHYSICS 70 3 1461-1466 (1991)

Inelastic Light Scattering in Semiconductor Quantum Structures

Highlights in Condensed Matter Physics and Future Prospects.
Ed.: L. Esaki. Plenum Press, N.Y., 1991. 191-207. (NATO ASI Ser.: B; 285).

Infrared Optical Properties and Band Structure of *-Sn/Ge Superlattices on Ge Substrates

Phys. Rev. Lett. 67, (22), 3164-3167 (1991)

J. Olajos | P. Vogl | W. Wegscheider | G. Abstreiter

Integrated wavelength-selective GaAs/AlGaAs multi-quantum-well detectors

Semicond. Sci. Technol. 6, C128-129 (1991)

Interband Optical Transitions in Semiconductor Quantum Wires: Selection Rules and Absorption Spectra

Europhysics Lett., 15, (2), 215-220 (1991)

U. Bockelmann | G. Bastard

Interface Phonons in GaAs/AlAs Superlattices Studied by Micro-Raman Spectroscopy

Superlattices and Microstructures, 9, (3), 309-311 (1991)

Intersubband Absorption and Real Space Electron Transfer in GaAs Quantum Wells

Resonant Tunneling in Semiconductors: Physics and Applications. Eds.: L.L. Chang, E. E. Mendez and C. Tejedor.Plenum Press, N.Y., 1991. 505-513. (NATO ASI Ser.: B; 277).

Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells

Mat. Res. Soc. Symp. Proc. 220, 379-381 (1991), "Silicon Molecular Beam Epitaxy",
Eds.: J.C. Bean, S.S. Iyer, and K.L. Wang. MRS, Pittsburg, 1991.

H. Hertle | G. Schuberth | E. Gornik | G. Abstreiter | F. Schäffler

Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells

Appl. Phys. Lett. 59, (23), 2977-2979 (1991)

H. Hertle | G. Schuberth | E. Gornik | G. Abstreiter | F. Schäffler

KINETICS OF LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - THE CONSTANT DEGRADATION METHOD

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 211-214 (1991)

Linewidth reduction in wavelength tunable laser diodes by voltage control

Electronics Letters 27 (1991) 531-532.

M. C. Amann | S. Illek | H. Lang

Micro-Raman Spectroscopy for Characterization of Semiconductor Devices

Appl. Surf. Science 50, p. 73-78 (1991)

Micro-Raman spectroscopy for large in-plane wave vector excitations in quantum-well structures

Light scattering in semiconductor structures and superlattices. Eds.: D. J. Lockwood and J. F. Young. Plenum Press, N.Y., 1991. 561-569. (NATO ASI Ser.:B; 273).

G. Abstreiter | S. Beeck | T. Egeler | A. Huber

Microscopic symmetry properties of (001) Si/Ge monolayer superlattices

Phys. Rev. B43, (6), 5188-5191 (1991)

K. Eberl | W. Wegscheider | R. Schorer | G. Abstreiter

MOLYBDENUM IMPURITY STATES IN AMORPHOUS-SILICON AND RELATED MATERIALS

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 63 1 151-162 (1991)

M. STUTZMANN | J. STUKE

Narrow linewidth tunable-twin-guide lasers with metal-clad ridge-waveguide structure

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1991).

T. Wolf | M. C. Amann

Narrow-linewidth InGaAsP/InP metal-clad ridge-waveguide distributed feedback lasers

Japanese Journal of Applied Physics 30 (1991) L745-L747.

T. Wolf | B. Borchert | K. Drögemüller | M. C. Amann

Optical Properties of Type I and Type II GaAs/AlGaAs Nanostructures

Physics of Nanostructures, 301-308, Proc. of SUSSP38, St. Andrews, July-August 1991,
Eds. J.H. Davies and A.R. Long

Photoreflectance and Resonant Raman Scattering in Short Period Si/Ge Superlattices on Ge (001) and Si (001)

Mat. Res. Soc. Symp. Proc. 220, 361-366 (1991)"Silicon Molecular Beam Epitaxy",
Eds.: J.C. Bean, S.S. Iyer, and K.L. Wang. MRS, Pittsburg, 1991.

U. Menczigar | K. Eberl | G. Abstreiter

Photoreflectance studies of GaAs containing a Si-*-doping layer

J. Appl. Phys. 69, (7), 4075-4079 ( April 1991)

Polarization-Dependent Optical-Wave Fields in Grating Structures

Europhys-Lett. 16, (6), 601-606 (1991)

Raman-microanalysis of strain and crystal orientation in laser-crystallized silicon

Fresenius J Anal Chem, 341, 166-170 (1991)

G. Kolb | T. Salbert | G. Abstreiter

Raman-Microprobe Study of Stress and Crystal Orientation in Laser-Crystallized Silicon

J. Appl. Phys. 69, (5), 3387-3389 (1991)

G. Kolb | T. Salbert | G. Abstreiter

Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts

Appl. Phys. Lett. 58, 1007-1009 (1991)

Resonant Raman Scattering by Quasi 2- and 1-dimensional Electron Systems

Festkörperprobleme (Advances in Solid State Physics) 31, 315-327 (1991).
Ed.: U. Rössler. Vierweg, Braunschweig 1991.

T. Egeler

Resonant Tunneling of Holes in Si/Si1-xGex Quantum Well Structures

Mat. Res. Soc. Symp. Proc. 220, 409-411 (1991), "Silicon Molecular Beam Epitaxy",
Eds.: J.C. Bean, S.S. Iyer, and K.L. Wang. MRS, Pittsburg, 1991.

G. Schuberth | G. Abstreiter | E. Gornik | F. Schäffler | J. F. Luy

Resonant Tunneling of Holes in Si/SixGe1-x Quantum-Well Structures

Phys. Rev. B43, (3), 2280-2284 (1991)

G. Schuberth | G. Abstreiter | E. Gornik | F. Schäffler | J. F. Luy

SPIN-DEPENDENT CONDUCTIVITY IN AMORPHOUS HYDROGENATED SILICON

PHYSICAL REVIEW B 43 6 5184-5187 (1991)

Stability and interdiffusion of short-period Si/Ge strained layer superlattices

J. Vac. Sci. Technol. B9, (4), 2045-2047 (1991)

E. Friess | R. Schorer | K. Eberl | G. Abstreiter

STATES OF HYDROGEN IN CRYSTALLINE SILICON

PHYSICA B 170 1-4 240-244 (1991)

M. STUTZMANN | W. BEYER | L. TAPFER | C. P. HERRERO

Strained layer heterostructures and superlattices based on group IV elements

Condensed Systems of Low-Dimensionality. Eds. J.L. Beeby, P. K. Bhattacharya, P. Ch. Gravelle, F. Koch and D. J. Lockwood. Plenum Press, N.Y., 1991. 471-480. (NATO ASI Ser.: B; 253).

G. Abstreiter | K. Eberl | E. Friess | U. Menczigar | W. Wegscheider

STRUCTURAL AND ELECTRONIC-PROPERTIES OF TERNARY HYDROGENATED AMORPHOUS SILICON-SULFUR-SELENIUM ALLOYS

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 911-914 (1991)

Structural Stability of Short-Period Si/Ge Superlattices Studied with Raman Spectroscopy

Phys. Rev. B44, (4), 1772-1781 (1991)

R. Schorer | E. Friess | K. Eberl | G. Abstreiter

STRUCTURAL-PROPERTIES OF LI-DOPED HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 107-110 (1991)

K. PIERZ | M. STUTZMANN | S. ZOLLNER | W. BEYER | C. BRILLERTY

Symmetry Properties of Short Period (001) Si/Ge Superlattices

Superlattices and Microstructures, 9, (1), 31-33 (1991)

K. Eberl | W. Wegscheider | G. Abstreiter | H. Cerva | H. Oppolzer

Wavelength tunable single-mode laser diodes

Festkörperprobleme (Vieweg) 31 (1991) 201-218.

Anisotropic Plasmon Dispersion in a Lateral Quantum-Wire Superlattice

W. Schlapp
Phys. Rev. Lett. 65, (14), 1804-1807 (1990)

Band Offset in Elastically Strained InGaAs/GaAs Multiple Quantum Wells determined by Optical Absorption and Electronic Raman Scattering

Appl. Phys. Lett. 56, (6), 536-538 (1990)

Comparison of alumina and silica based spin-on diffusion sources

Japanese Journal of Applied Physics 29 (1990) L712-715.

G. Franz | M. C. Amann | W. Thulke | R. Weber | R. Kaumanns

Confinement of Light Hole Valence-Band States in Pseudomorphic InGaAs/Ga(Al)As Quantum Wells

Appl. Phys. Lett. 57, (10), 957-959 (1990)

J. P. Reithmaier | R. Höger | H. Riechert | P. Hiergeist | G. Abstreiter

Continuously tunable laser diodes: Longitudinal versus transverse tuning scheme

IEEE J. on Selected Areas in Communications 8 (1990) 1169-1177 (invited).

M. C. Amann | W. Thulke

Continuously tunable metal-clad ridge-waveguide distributed feedback laser diode

Electronics Letters 26 (1990) 1845-1846.

T. Wolf | H. Westermeier | M. C. Amann

Continuous-tuning ranges of 3-section DBR lasers and TTG-DFB lasers

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1990).

W. Thulke | M. C. Amann

DEUTERIUM EFFUSION MEASUREMENTS IN DOPED CRYSTALLINE SILICON

JOURNAL OF APPLIED PHYSICS 68 3 1406-1409 (1990)

M. STUTZMANN | M. S. BRANDT

Electronic and structural characterization of the near surface layer and the bulk in

S. Aljishi, Shu Jin, M. Stutzmann, and L. Ley
Mat. Res. Soc. Conf. Proc. Vol. 164 (Materials Research Society, Pittsburgh, 1990), p. 51
85. Hydrogen diffusion in boron-doped silicon
C. P. Herrero, M. Stutzmann, and A. Breitschwerdt
MRS Conf. Proc. Vol. 163 (Materials Research Society, Pittsburgh, 1990), p. 395

ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS

JOURNAL OF APPLIED PHYSICS 68 4 1726-1734 (1990)

Excess linewidth broadening in wavelength-tunable laser diodes

Electronics Letters 26 (1990) 279-280.

M. C. Amann | R. Schimpe

Exciton tunneling in asymmetric coupled quantumwells with spatially separated electron and hole injection

Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990.
Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1493-1496.

A. Zrenner | J. M. Worlock | L. T. Florez | J. P. Harbison

Fabrication and lasing characteristics of L=1.56 µm tunable twin-guide (TTG) DFB lasers

IEE Proceedings Part J 137 (1990) 69-73.

C. Schanen | S. Illek | H. Lang | W. Thulke | M. C. Amann

Grating Coupler Effects on Inelastic Light Scattering by Plasmons in Micro Structured GaAs MQW Systems

Surface Science 229, 391-393 (1990)

Growth and Characterization of Ultrathin SimGen Strained Layer Superlattices

Proc. of Esprit Conference, Brussels (1990). Kluwer Academic Publishers, 1990. 865-882.

H. Presting | H. Kibbel | E. Kasper | M. Jaros | G. Abstreiter

High Resolution Micro Raman Spectroscopy of GaAs/AlGaAs Quantum Well Lasers in the Low Power Range

Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, September 24-27, 1990. IOP Publishing Ltd., 1990. 561-566. (Inst. Phys. Conf. Ser. 112; Chapter 8).

S. Beeck | F. U. Herrmann | G. Abstreiter | C. Hanke | L. Korte

Highly Strained ?-Sn/Ge Superlattices - New Man-made Semiconductors

Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990.
Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 1685-1688.

Inelastic Light Scattering by Electrons in Microstructured Quantum Wells

Solid State Sciences 97: Localization and Confinement of Electrons in Semiconductors
Eds.: F. Kuchar, H. Heinrich, G. Bauer. Springer-Verlag, Berlin 1990. 60-69.

G. Abstreiter | T. Egeler

Intrinsic bistability in an optically pumped asymmetric quantum well structure

Superlattices and Microstructures, Vol. 7, (4), 327-330 (1990)

A. Zrenner | J. M. Worlock | L. T. Florez | J. P. Harbison

LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - SINGLE CARRIER VERSUS EXCITONIC MECHANISMS

APPLIED PHYSICS LETTERS 56 23 2313-2315 (1990)

Linewidth enhancement by shot noise In DFB lasers

13th European Workshop on Injection Lasers, Gent, Belgium (1990).

Linewidth enhancement in distributed-feedback semiconductor lasers

Electronics Letters 26 (1990) 569-571.

Local Temperature Distribution in Si-MOSFET`s Studied by Micro-Raman Spectroscopy

Proc. of the 20th ESSDERC, Nottingham, 1990, Bristol: Hilger, 591-594 (1990)
eds. Eccleston et .al.

R. Ostermeir | K. Brunner | G. Abstreiter | W. Weber

Negative Infrared Photoconductivity in Narrow GaAs/AlGaAs Multiple Quantum Well Strucutres

Surface Science 228, 465-467 (1990)

New Relaxation Mechanism in Short Period Si/Ge Strained-Layer Superlattices

Mat. Res. Soc. Symp. Proc. Vol. 183, 155-160 (1990)

W. Wegscheider | K. Eberl | G. Abstreiter | H. Cerva | H. Oppolzer

Novel Relaxation Process in Strained Si/Ge Superlattices Grown on Ge (001)

Appl. Phys. Lett. 57, (15), 1496-1498 (1990)

W. Wegscheider | K. Eberl | G. Abstreiter | H. Cerva | H. Oppolzer

Novel transverse twin guide tunable semiconductor laser

European Conference on Optical Communications (ECOC), Amsterdam, The Netherlands (1990) 761-768 (invited).

Optical Properties of Short Period Si/Ge Superlattices Grown on (001) Ge Studied with Photoreflectance

in "Physical Concepts of Materials for Novel Optoelectronic Device Applications I:
Materials Growth and Characterization", ed. M. Razeghi,
Proc. of the SPIE `90, Vol. 1361, 282, Aachen

U. Menczigar | M. Dahmen | R. Zachai | K. Eberl | G. Abstreiter

Over 7 nm (875 GHz) continuous wavelength tuning by tunable twin-guide (TTG) laser diode

Electronics Letters 26 (1990) 46-47.

S. Illek | W. Thulke | C. Schanen | H. Lang | M. C. Amann

Phonon scattering and energy relaxation in two-, one-, and zero-dimensional electron gases

Phys. Rev. B42, (14), 8947-8951 (1990)

U. Bockelmann | G. Bastard

Photoluminescence in Short Period Si/Ge Strained Layer Superlattices Grown on Si and Ge Substrates

Surface Science 228, 267-269 (1990)

R. Zachai | K. Eberl | G. Abstreiter | E. Kasper | H. Kibbel

Photoluminescence in Short-Period Si/Ge Strained-Layer Superlattices

Phys. Rev. Lett. 64, (9), 1055-1058 (1990)

R. Zachai | K. Eberl | G. Abstreiter | E. Kasper | H. Kibbel

Plasmon Excitations in lateral GaAs/(AlGa)As Quantum Wire Superlattices

Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990.
Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 2359-2362.

Recent progress in narrow-linewidth InGaAsP laser diodes and diode laser amplifiers

IEEE International Semiconductor Laser Conference (ISLC), Davos, Switzerland (1990) paper-A-2 (invited).

Relevant Scattering Processes, Band Gap Renormalization and Moss-Burstein shift in Modulation Doped Narrow GaAs/AlGaAs Multiple Quantum Wells

Surface Science 229, 398-401 (1990)

U. Bockelmann | P. Hiergeist | G. Abstreiter | G. Weimann | W. Schlapp

Segregation of Zinc in InGaAs/InP heterostructures during diffusion: Experiment and numerical modelling

Japanese Journal of Applied Physics 29 (1990) 810-812.

F. Dildey | M. C. Amann | R. Treichler

Single-crystal Sn/Ge Superlattices on Ge Substrates: Growth and Structural Properties

Appl. Phys. Lett. 57, (9), 875-877 (1990)

W. Wegscheider | K. Eberl | U. Menczigar | G. Abstreiter

Single-Particle and Transport Scattering Times in Narrow GaAs/AlxGa1-xAs Quantum Wells

Phys. Rev. B41, (11), 7864-7867 (1990)

U. Bockelmann | G. Abstreiter | G. Weimann | W. Schlapp

Strain and Confinement Effects on Optical Phonons in Short Period (100) Si/Ge Superlattices

Solid State Communications 73, (3), 203-207 (1990)

E. Friess | K. Eberl | U. Menczigar | G. Abstreiter

Strain Effects on Valence Band States of Pseudomorphic InGaAs/Ga(Al)As Multiple Quantum Wells

Proc. of the 17th Int. Symp. on GaAs and Related Compounds, Jersey, 1990. IOP Publishing Ltd., 1990. 197-200. (Inst. Phys. Conf. Ser. 112; Chapter 4).

J. P. Reithmaier | H. Riechert | O. Heinrich | P. Hiergeist | G. Abstreiter

Supergitter und Heterostrukturen - Chancen für neue Bauelemente

Siemens Zeitschrift, Spezial (Herbst 1990), p. 38-41

Superlattices effects in quantum dots

Proc. of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Aug. 6-10, 1990.
Eds.: E.M. Anastassakis and J. D. Joannopoulos. World Scientific, Singapore 1990. 2363-2370.

J. A. Brum

Transport properties of InxGa1-xAs/GaAs strained quantum well delta-doped heterostructures grown by molecular beam epitaxy

Appl. Phys. Lett. 57, (11), 1117-1119 (1990)

Tunable twin-guide laser diode with 7 nm continuous tuning range

Conference on Lasers and Electro-Optics (CLEO), Anaheim, USA (1990) paper-CTH-A2.

C. Schanen | S. Illek | H. Lang | W. Thulke | M. C. Amann

Wavelength tuning efficiency and spectral linewidth broadening in tunable twin-guide DFB laser diodes

IEEE International Semiconductor Laser Conference (ISLC), Davos, Switzerland (1990) paper-E-1.

S. Illek | W. Thulke | C. Schanen | K. Drögemüller | M. C. Amann

Wavelength-tunable DFB laser diodes

IEEE / LEOS annual meeting, Boston, USA (1990) paper-SDL 4 (invited).

1.55 µm tunable twin-guide laser with large continuous tuning range and narrow spectral linewidth

European Conference on Optical Communications (ECOC), Göteburg, Sweden (1989) paper PDB-1-46-49.

M. C. Amann | C. Schanen | S. Illek | H. Lang | W. Thulke

A novel approach for tunable laser diodes

Conference on Quantum Electronics and Laser Science, Baltimore, USA (1989) 278-279.

S. Illek | M. C. Amann | C. Schanen | W. Thulke

Confined Optical Modes in Short Period (110) Si/Ge Superlattices

Solid State Communications 69, (9), 899-903 (1989)

E. Friess | H. Brugger | K. Eberl | G. Krötz | G. Abstreiter

Continuously tunable single-frequency laser diode utilizing a transverse tuning scheme

Electronics Letters 25 (1989) 837-839.

M. C. Amann | S. Illek | C. Schanen | W. Thulke | H. Lang

Cost-216 comparative study of eigenmode analysis methods for single and coupled integrated optical waveguides

IEE Proceedings Part J 136 (1989) 273-280.

M. C. Amann | et al.

CRITIQUE OF (TIME)1/3 KINETICS OF DEFECT FORMATION IN AMORPHOUS SI-H AND A POSSIBLE ALTERNATIVE MODEL - COMMENT ON KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON

APPLIED PHYSICS LETTERS 54 4 398-399 (1989)

D. REDFIELD

CRITIQUE OF (TIME)1/3 KINETICS OF DEFECT FORMATION IN AMORPHOUS SI-H AND A POSSIBLE ALTERNATIVE MODEL - COMMENT ON KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON - RESPONSE

APPLIED PHYSICS LETTERS 54 4 399-400 (1989)

W. B. JACKSON | C. C. TSAI | M. STUTZMANN

Current confinement and leakage currents in planar buried-ridge-structure laser diodes on n-substrate

IEEE Journal of Quantum Electronics 25 (1989) 1595-1602.

M. C. Amann | W. Thulke

Current confinement and reduction of shunt currents in BRS-type laser diodes

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1989).

M. C. Amann | B. Borchert | C. Huber | S. Illek | W. Thulke

DEFECT DENSITY AND STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-SULFUR ALLOYS

JOURNAL OF NON-CRYSTALLINE SOLIDS 114 462-464 (1989)

DEPOSITION OF SILICON BY DECOMPOSITION OF SILANE VIA HYDROGEN ABSTRACTION

JOURNAL OF NON-CRYSTALLINE SOLIDS 115 1-3 105-107 (1989)

M. S. BRANDT | J. CHRYSOSTOMIDES | S. KOYNOV | V. PETROVAKOCH

HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS IN SILICON

PHYSICA SCRIPTA T25 276-282 (1989)

M. STUTZMANN | C. P. HERRERO

Improvement of Structural Properties of Si/Ge Superlattices

Thin Solid Films 183, 95-103 (1989)

K. Eberl | E. Friess | W. Wegscheider | U. Menczigar | G. Abstreiter

Investigations of GaAs/AlGaAs Quantum Well lasers by Micro Raman Spectroscopy

C. Hoyler, and L. Korte
Proc. of the 19th European Solid State Device Research Conference (ESSDERC), Berlin 1989. 508-511.

Local Operating Temperatures in GaAs Quantum Well Lasers

Proc. of the 16th Int. Symp. on GaAs and Related Compounds, Karuizawa, Japan, September 25-29, 1989. Ed.: T. Ikoma and H. Watanabe. IOP Publishing Ltd., 1990. 771-776. (Inst. Phys. Conf. Ser. No. 106: Chapter 10).

H. Brugger | P. W. Epperlein | S. Beeck | G. Abstreiter

METAL IMPURITIES IN A-SI-H AND OTHER AMORPHOUS-SEMICONDUCTORS

JOURNAL OF NON-CRYSTALLINE SOLIDS 114 414-416 (1989)

MICROSCOPIC NATURE OF COORDINATION DEFECTS IN AMORPHOUS-SILICON

PHYSICAL REVIEW B 40 14 9834-9840 (1989)

M. STUTZMANN | D. K. BIEGELSEN

NMR INVESTIGATION OF HYDROGEN IN AMORPHOUS-SILICON AND RELATED MATERIALS

JOURNAL OF NON-CRYSTALLINE SOLIDS 114 211-216 (1989)

J. B. BOYCE | S. E. READY | M. STUTZMANN | R. E. NORBERG

Phonons and Optical Properties of Si/Ge Superlattices

Spectroscopy of Semiconductor Microstructures, Venice, Italy, May 9-13, 1989.
Eds.: G. Fasol, A. Fasolino, and P. Lugli. Plenum Press, N.Y. 1989. 165-174.
(NATO ASI Ser.: B; 206).

Picosecond Intersubband Spectroscopy

Superlattices and Microstructures 5, (4), 569-574 (1989)

A. Seilmeier | M. Wörner | G. Abstreiter | G. Weimann | W. Schlapp

Plasmon Excitations in Layered 2D Electron Gas Systems with Large In-Plane Wave Vector

Superlattices and Microstructures 5, (1), 123-126 (1989)

T. Egeler | S. Beeck | G. Abstreiter | G. Weimann | W. Schlapp

Polarization dependent optical gain in ridge-waveguide lasers

Electronics Letters 25 (1989) 1017-1018.

B. Stegmueller | M. C. Amann

Realization of Short Period Si/Ge Strained-Layer Superlattices

Heterostructures on Silicon: One Step Further with Silicon. Eds.: Y.I. Nissim and E. Rosencher. Kluwer Academic Publishers, 1989. 153-160. (NATO ASI Ser.: E; 160).

K. Eberl | W. Wegscheider | E. Friess | G. Abstreiter

Reliable spin-on source for acceptor diffusion into III/V compound semiconductors

Journal of the Electrochemical Society 136 (1989) 2410-2413.

G. Franz | M. C. Amann

Replacement of magnesium in InGaAs/InP heterostructures during diffusion

Applied Physics Letters 55 (1989) 876-878.

F. Dildey | R. Treichler | M. C. Amann | M. Schier | G. Ebbinghaus

Si-Ge Strained Layer Superlattices

Thin Solid Films 183, 1-8 (1989)

Silicon/Germanium Strained Layer Superlattices

J. of Crystal Growth 95, 431-438 (1989)

G. Abstreiter | K. Eberl | E. Friess | W. Wegscheider | R. Zachai

Spectroscopy of Free Carrier Excitations in Semiconductor Quantum Wells

Topics in Applied Physics 66: Light Scattering in Solids V.
Eds.: M. Cardona, G. Güntherodt. Springer-Verlag, Berlin 1989. 153-211.

A. Pinczuk | G. Abstreiter

Strain at Si-Si02 Interfaces Studied by Micro-Raman Spectroscopy

Appl. Surf. Science 39, 116-126 (1989)

K. Brunner | G. Abstreiter | B. O. Kolbesen | H. W. Meul

STRUCTURAL, OPTICAL, AND SPIN PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS

JOURNAL OF APPLIED PHYSICS 66 2 569-592 (1989)

M. STUTZMANN | R. A. STREET | C. C. TSAI | J. B. BOYCE | S. E. READY

THE DEFECT DENSITY IN AMORPHOUS-SILICON

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 60 4 531-546 (1989)

Transmission electron microscopy of short-period Si/Ge strained-layer superlattices on Ge substrates

Appl. Phys. Lett. 55, (5), 448-450 (1989)

W. Wegscheider | K. Eberl | H. Cerva | H. Oppolzer

Transversely tunable laser diode with large continuous tuning range

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1989).

W. Thulke | C. Schanen | S. Illek | M. C. Amann

Tunable twin-guide laser: A novel laser diode with improved tuning performance

Applied Physics Letters 54 (1989) 2532-2533.

M. C. Amann | S. Illek | C. Schanen | W. Thulke

Tuning range and threshold current of the tunable twin-guide (TTG) laser

IEEE Photonics Technology Letters 1 (1989) 253-254.

M. C. Amann | S. Illek | C. Schanen | W. Thulke

Wavelength tunable single-mode metal-clad ridge-waveguide lasers for 1.55 µm wavelength region

Archiv für Elektronik und Übertragungstechnik (AEÜ) 43 (1989) 390-393.

M. C. Amann | G. G. Baumann | B. Borchert | H. Lang | H. Unzeitig

Annealing Effects in short period Si-Ge strained layer superlattices

Semicond. Sci. Technol. 3, 1166-1170 (1988)

H. Brugger | E. Friess | G. Abstreiter | E. Kasper | H. Kibbel

Cost-216 comparative study of eigenmode analysis methods for single and coupled integrated optical waveguides

European Conference on Optical Communications (ECOC), Brighton, United Kingdom (1988) 296-299.

M. C. Amann | et al.

DANGLING OR FLOATING BONDS IN AMORPHOUS-SILICON

PHYSICAL REVIEW LETTERS 60 16 1682-1682 (1988)

M. STUTZMANN | D. K. BIEGELSEN

Design and performance of InGaAsP/InP planar buried-ridge-structure lasers

IEEE International Semiconductor Laser Conference (ISLC), Boston, USA (1988) 214-215.

W. Thulke | A. Zach | B. Borchert | M. C. Amann

Direct Observation of Intersubband Relaxation in Narrow Multiple Quamtum Well Structures

Solid-State Electronics 31, 767-770 (1988)

Electronic Excitations in Narrow GaAs/AlxGa1-xAs Quantum Well Structures

Surface Science 196, 613-618 (1988)

HYDROGEN VIBRATIONS IN SEMICONDUCTORS AND INSULATORS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 149 2 K95-K99 (1988)

J. TATARKIEWICZ | M. STUTZMANN

InGaAsP twin-stripe lasers with asymmetrical waveguide channels

IEE Proceedings Part J 135 (1988) 5-10.

T. Wolf | F. Kappeler | B. Stegmueller | M. C. Amann

InGaAsP/InP metal-clad ridge-waveguide (MCRW) lasers for optical transmission systems

Siemens Forschungs- und Entwicklungs- Berichte 17 (1988) 264-269.

G. G. Baumann | B. Stegmueller | M. C. Amann

Interface Roughness Scattering and Electron Mobilities in Thin GaAs Quantum Wells

Europhys. Letters 6, (2), 183-188 (1988)

R. Gottinger | A. Gold | G. Abstreiter | G. Weimann | W. Schlapp

LATTICE-RELAXATION DUE TO HYDROGEN PASSIVATION IN BORON-DOPED SILICON

APPLIED PHYSICS LETTERS 52 20 1667-1669 (1988)

M. STUTZMANN | J. HARSANYI | A. BREITSCHWERDT | C. P. HERRERO

Localization of hydrogen in B and In doped silicon by channeling and PAC

M. Stutzmann
in: Defects in Electronic Materials, Mat. Res. Soc. Symp. Proc. 104, 265 (1988)

MICROSCOPIC STRUCTURE OF BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON

PHYSICAL REVIEW B 38 17 12668-12671 (1988)

C. P. HERRERO | M. STUTZMANN

NEW RAMAN LINES IN CDF2 IRRADIATED WITH HYDROGEN AND DEUTERIUM

ACTA PHYSICA POLONICA A 73 3 377-379 (1988)

P. CIEPIELEWSKI | M. STUTZMANN | J. TATARKIEWICZ

Polarization competition in quasi-index-guided laser diodes

Journal of Applied Physics 63 (1988) 1824-1830.

M. C. Amann | B. Stegmueller

Polarization of L=1.55 µm InGaAsP ridge-waveguide lasers

Japanese Journal of Applied Physics 27 (1988) 104-106.

E. Hartl | M. C. Amann

Reliable InGaAsP/InP metal-clad ridge-waveguide lasers for high-temperature and high-power cw operation

13th Australian Conference on Optical Fibre Technology , Hobart, Australia (1988) 51-55.

B. Stegmueller | M. C. Amann | G. G. Baumann | H. Westermaier

Strain Adjustment in Si/SiGe Superlattices

Mat.Res.Soc.Symp.Proc., Vol. 102, 393-403 (1988)

E. Kasper | H. J. Herzog | H. Jorke | G. Abstreiter

STRESS-INDUCED HYDROGEN MOTION IN BORON-DOPED CRYSTALLINE SILICON

SOLID STATE COMMUNICATIONS 68 12 1085-1088 (1988)

C. P. HERRERO | M. STUTZMANN

Symmetrically strained Si/Ge superlattices on Si substrates

Phys. Rev. B38, (5), 3599-3601 (1988)

Waveguiding analysis of mushroom-stripe laser diodes

IEE Proceedings Part J 135 (1988) 68-73.

Analysis of a PIN photodiode with integrated waveguide

Electronics Letters 23 (1987) 895-897.

DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM

PHYSICAL REVIEW B 35 11 5666-5701 (1987)

M. STUTZMANN | D. K. BIEGELSEN | R. A. STREET

EFFECTS OF DOPANT AND IMPURITY INCORPORATION ON METASTABLE LIGHT-INDUCED DEFECT FORMATION

SOLAR CELLS 21 431-438 (1987)

W. B. JACKSON | M. STUTZMANN | C. C. TSAI

ELECTRONIC STATES IN THE GAP OF AMORPHOUS SILICON-GERMANIUM ALLOYS

JOURNAL OF NON-CRYSTALLINE SOLIDS 97-8 1011-1014 (1987)

M. STUTZMANN | C. C. TSAI | R. A. STREET

ELECTRON-SPIN RESONANCE OF SHALLOW DEFECT STATES IN AMORPHOUS-SILICON AND GERMANIUM

JOURNAL OF NON-CRYSTALLINE SOLIDS 97-8 105-108 (1987)

HYDROGEN PASSIVATION OF BORON ACCEPTORS IN SILICON - RAMAN STUDIES

PHYSICAL REVIEW B 35 11 5921-5924 (1987)

Improved shallow p+-diffusion into InGaAsP by a new spin-on diffusion source

Journal of Applied Physics 62 (1987) 1541-1543.

M. C. Amann | G. Franz

Intersubband Relaxation in GaAs/AlxGa1-xAs Quantum Well Structures Observed Directly by an Infrared Bleacing Technique

Phys. Rev. Lett. 59, (12), 1345-1348 (1987)

A. Seilmeier | H. J. Hübner | G. Abstreiter | G. Weimann | W. Schlapp

OCCUPANCY OF DANGLING BOND DEFECTS IN DOPED HYDROGENATED AMORPHOUS-SILICON

SOLID STATE COMMUNICATIONS 62 3 153-157 (1987)

M. STUTZMANN | W. B. JACKSON

ON THE STRUCTURE OF DANGLING BOND DEFECTS IN SILICON

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE 151 211-222 (1987)

Polarization competition in quasi-index-guided laser diodes

10th European Workshop on Laser Diodes, Tampere, Finland (1987).

B. Stegmueller | M. C. Amann

Polarization control in ridge-waveguide laser diodes

Applied Physics Letters 50 (1987) 1038-1040.

Polarization of metal-clad ridge-waveguide laser diodes

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1987).

B. Stegmueller | M. C. Amann

Pseudomophic growth of SixGe1-x on GaAs (110)

Semicond. Sci. Technol. 2, 561-567 (1987)

K. Eberl | G. Krötz | T. Wolf | F. Schäffler | G. Abstreiter

Raman Spectroscopy for the Study of Semiconductor Heterostructures and Superlattices

Physics and Applications of Quantum Wells and Superlattices. Eds.: E.E. Mendez and K. von Klitzing. Plenum Press, N.Y. 1987. 301-315.
(NATO ASI Ser.: B; 170).

RAMAN-SCATTERING OF HYDROGEN-IMPLANTED AND DEUTERIUM-IMPLANTED CADMIUM FLUORIDE

JOURNAL OF APPLIED PHYSICS 62 9 3922-3924 (1987)

M. STUTZMANN | J. TATARKIEWICZ

Si-Ge Strained Layer Superlattices

Journal de Physique C5, (11), 321-327 (1987).
Proc. of the 3rd Int. Conf. on Modulated Semiconductor Structures, Montpellier, France, July 6-10, 1987. Eds.: A. Raymond and P. Voisin. Les Editions de Physique, Les Ulis 1987.

H. Brugger | G. Abstreiter

Silicon-Germanium Superlattices

SPIE, Vol. 792, Quantum Well and Superlattice Physics, 77-85 (1987)

G. Abstreiter | H. Brugger | K. Eberl | R. Zachai

Strained Layer Si/SiGe Superlattices

Superlattices and Microstructures 3, (2), 141-146 (1987)

E. Kasper | H. J. Herzog | H. Jorke | G. Abstreiter

Structural, Compositional, and Optical Properties of Ultrathin Si/Ge Superlattices

Journal de Physique C5, 329-332 (1987)

K. Eberl | G. Krötz | R. Zachai | G. Abstreiter

TEMPERATURE-DEPENDENCE OF HYDROGEN VIBRATIONAL-MODES IN PASSIVATED BORON-DOPED SILICON

APPLIED PHYSICS LETTERS 51 18 1413-1415 (1987)

M. STUTZMANN | C. P. HERRERO

THE ROLE OF DANGLING BONDS IN THE TRANSPORT AND RECOMBINATION OF A-SI-GE-H ALLOYS

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 56 3 289-303 (1987)

R. A. STREET | C. C. TSAI | M. STUTZMANN | J. KAKALIOS

Thermal resistance of ridge-waveguide lasers mounted upside-down

Applied Physics Letters 50 (1987) 4-6.

THERMALLY AND OPTICALLY INDUCED METASTABILITIES IN DOPED HYDROGENATED AMORPHOUS-SILICON - ELECTRON-SPIN-RESONANCE STUDIES

PHYSICAL REVIEW B 35 18 9735-9743 (1987)

WEAK BOND DANGLING BOND CONVERSION IN AMORPHOUS-SILICON

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 56 1 63-70 (1987)

Analytical solution for the current density distribution in multiple-stripe laser diodes

Applied Physics Letters 48 (1986) 1710-1712.

M. C. Amann | F. Kappeler

ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

PHYSICAL REVIEW B 34 1 63-72 (1986)

M. STUTZMANN | W. B. JACKSON | C. C. TSAI

Calculation of metal-clad ridge-waveguide (MCRW) laser modes by mode coupling technique

IEEE Journal of Lightwave Technology 4 (1986) 689-693.

Condition for proper waveguiding in the metal-clad ridge-waveguide (MCRW) laser

Archiv für Elektronik und Übertragungstechnik (AEÜ) 40 (1986) 185-187.

Dispersion of Folded Phonons in Si/SixGe1-x Superlattices

Superlattices and Microstructures 2, (5), 451-454 (1986)

EFFECT OF TEMPERATURE DURING ILLUMINATION ON ANNEALING OF METASTABLE DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON

APPLIED PHYSICS LETTERS 49 15 957-959 (1986)

W. B. JACKSON | M. STUTZMANN

Electric Subbands in Si/SiGe Strained Layer Superlattices

Z. Physik B64, 137-143 (1986)

C. Zeller | G. Abstreiter

Electric-field-induced Raman scattering:Resonance, temperature, and screening effects

Phys. Rev. B34, (6), 4017-4025 (1986)

F. Schäffler | G. Abstreiter

ELECTRON-NUCLEAR DOUBLE-RESONANCE EXPERIMENTS IN HYDROGENATED AMORPHOUS-SILICON

PHYSICAL REVIEW B 34 5 3093-3107 (1986)

M. STUTZMANN | D. K. BIEGELSEN

ELECTRON-SPIN-RESONANCE-TRANSIENT SPECTROSCOPY

PHYSICAL REVIEW B 34 1 54-62 (1986)

W. B. JACKSON | M. STUTZMANN | C. C. TSAI

Equally Strained Si/SiGe Superlattices on Si Substrates

Mat. Res. Soc. Symp., Vol. 56, 347-357 (1986)

E. Kasper | H. J. Herzog | H. Daembkes | G. Abstreiter

Folded acoustic phonons in Si/SixGe1-x Superlattices

Phys. Rev. B33, 5928-5930 (1986)

H. Brugger | G. Abstreiter | H. Jorke | H. J. Herzog | E. Kasper

High-performance InGaAsP/InP metal-clad ridge-waveguide (MCRW) lasers for long-wavelength optical communication systems

European Conference on Optical Communications (ECOC), Barcelona, Spain (1986) 85-88.

M. C. Amann | B. Stegmueller | G. G. Baumann | C. Hanke

High-speed InGaAsP/InP metal-clad ridge-waveguide (MCRW) laser diodes

EFOC/LAN, Amsterdam, The Netherlands (1986).

M. C. Amann | C. Hanke | B. Stegmueller

HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON

PHYSICAL REVIEW B 33 5 3006-3011 (1986)

D. K. BIEGELSEN | M. STUTZMANN

Inelastic Light Scattering by Electronic Excitations in Semiconductor Heterostructures

IEEE QE22, 1771-1784 (1986)

G. Abstreiter | R. Merlin | A. Pinczuk

Influence of waveguide design on threshold current of InGaAsP/InP metal-clad ridge-waveguide lasers

IEEE International Semiconductor Laser Conference (ISLC), Kanazawa, Japan (1986) 224-225.

M. C. Amann | B. Stegmueller

InGaAsP/InP metal-clad ridge-waveguide (MCRW) lasers for optical communication systems

Opto, Paris, France (1986).

B. Stegmueller | M. C. Amann | C. Hanke

Internal Photoemission - A Suitable Method for Determining Band Offsets in Semiconductor Heterostructures

Surface Science 174, 312-317 (1986)

G. Abstreiter | U. Prechtel | G. Weimann | W. Schlapp

Light Scattering in Novel Layered Semiconductor Structures

Festkörperprobleme (Advances in Solid State Physics) 26, 41-53 (1986).
Ed.: P. Grosse. Vieweg, Braunschweig 1986.

LIGHT-INDUCED METASTABLE DEFECTS IN AMORPHOUS-SILICON - THE ROLE OF HYDROGEN

APPLIED PHYSICS LETTERS 48 1 62-64 (1986)

M. STUTZMANN | W. B. JACKSON | A. J. SMITH | R. THOMPSON

Low-threshold InGaAsP-InP metal-clad ridge-waveguide (MCRW) lasers for 1.3 µm wavelength

Japanese Journal of Applied Physics 25 (1986) 228-230.

M. C. Amann | B. Stegmueller

Narrow-stripe metal-clad ridge-waveguide lasers for 1.3 µm wavelength

Applied Physics Letters 48 (1986) 1027-1029.

M. C. Amann | B. Stegmueller

Optical and Electronic Properties of Si/SiGe Superlattices

Solid State Sciences 67: Two-Dimensional Systems:Physics and New Devices.
Eds.: G. Bauer, F. Kuchar, and H. Heinrich. Springer-Verlag, Berlin 1986. 130-139.

G. Abstreiter | H. Brugger | T. Wolf | R. Zachai | C. Zeller

Raman Scattering at Interfaces

Optical Properties of Narrow-Gap Low-Dimensional Structures. Eds.: C.M. Sotomayor Torres, J. C. Portal, J.C. Maan, R.A. Stradling.
Plenum Press, N.Y.1986. 269-278. (NATO ASI Ser.: B; 152).

Raman Scattering for Studies of Semiconductor-Heterostructures and Superlattices

Proc. of the 18th Int. Conf. on the Physics of Semiconductor, Stockholm, Sweden, August 11-15, 1986. Ed.: O. Engström. World Scientific, Singapore 1987. Vol. 1, 739-746.

G. Abstreiter | H. Brugger

Rigorous waveguiding analysis of the separated multiclad-layer stripe-geometry laser

IEEE Journal of Quantum Electronics 22 (1986) 1992-1998.

Semiconductor Heterostructures

Siemens Forsch- und Entwickl.-Ber. Bd. 15, (6), 312-318 (1986)

THE DOPING EFFICIENCY IN AMORPHOUS-SILICON AND GERMANIUM

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 53 1 L15-L21 (1986)

Threshold current analysis of InGaAsP-InP ridge-waveguide lasers

IEE Proceedings Part J 133 (1986) 341-348.

M. C. Amann | B. Stegmueller

Two-Dimensional Electron Systems in Si/SixGe1-x Strained-Layer Superlattices

Surface Science 174, 640-645 (1986)

G. Abstreiter | H. Brugger | T. Wolf | H. Jorke | H. J. Herzog

2-LEVEL SYSTEMS IN HYDROGENATED AMORPHOUS-SILICON - NMR-STUDIES

PHYSICAL REVIEW B 32 9 6062-6065 (1985)

J. B. BOYCE | M. STUTZMANN | S. E. READY

DONOR STATES IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM

PHYSICAL REVIEW LETTERS 54 16 1836-1839 (1985)

M. STUTZMANN | R. A. STREET

DOPANT AND DEFECT STATES IN A-SI-H

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 52 3 235-245 (1985)

R. A. STREET | D. K. BIEGELSEN | W. B. JACKSON | N. M. JOHNSON | M. STUTZMANN

DOPANT STATES AND RECOMBINATION IN COMPENSATED A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 647-650 (1985)

M. STUTZMANN | D. K. BIEGELSEN | R. A. STREET

Formation of metal-semiconductor interfaces: From the submonolayer regime to the real Schottky barrier

J. Vac. Sci. Technol. B3, (4), 1184-1189 (1985)

F. Schäffler | G. Abstreiter

INTERFACE EFFECTS IN AMORPHOUS-SILICON NITRIDE MULTILAYERS

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 995-998 (1985)

C. C. TSAI | M. J. THOMPSON | R. A. STREET | M. STUTZMANN | F. PONCE

Internal Photoemission in GaAs/(AlxGa1-x)As Heterostructures

Physica 134B, 433- 438 (1985)

G. Abstreiter | U. Prechtel | G. Weimann | W. Schlapp

Lateral waveguiding analysis of 1.3 µm InGaAsP-InP metal-clad ridge-waveguide (MCRW) lasers

Archiv für Elektronik und Übertragungstechnik (AEÜ) 39 (1985) 311-316.

Light scattering in semiconductor heterostructures

Molecular Beam Epitaxy (MBE) and Heterostructures. Eds.: L. L. Chang and K. Ploog. Martinus Nijhoff Publishers, Dordrecht 1985. 425-459.(NATO ASI Ser.: E; 87).

Light scattering studies of semiconductor heterostructures

J. Vac. Sci. Technol. B3, (2), 683-686 (1985)

LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 363-372 (1985)

M. STUTZMANN | W. B. JACKSON | C. C. TSAI

LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY

PHYSICAL REVIEW B 32 1 23-47 (1985)

M. STUTZMANN | W. B. JACKSON | C. C. TSAI

MOLECULAR-HYDROGEN IN AMORPHOUS SI-NMR STUDIES

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 265-268 (1985)

J. B. BOYCE | M. STUTZMANN | S. E. READY

NATIVE DEFECTS AT THE SI/SIO2 INTERFACE - AMORPHOUS-SILICON REVISITED

APPLIED SURFACE SCIENCE 22-3 MAY 879-890 (1985)

D. K. BIEGELSEN | N. M. JOHNSON | M. STUTZMANN | E. H. POINDEXTER | P. J. CAPLAN

ORIENTATIONAL ORDERING AND MELTING OF MOLECULAR H-2 IN AN A-SI MATRIX - NMR-STUDIES

PHYSICAL REVIEW LETTERS 54 6 562-565 (1985)

J. B. BOYCE | M. STUTZMANN

Phonon Properties of SixGe1-x Strained Overlayers on (110) GaAs

Journal de Physique, MRS Europe, 209-212 (1985)
Proc. of MRS-Europe Spring Conf. on Semiconductor Quantum Well Structures and Superlattices VI, Strasbourg, France, May 13-15, 1985. Eds.: K. Ploog and N. T. Linh. Les Editions de Physique, Les Ulis 1985. 209-212.

H. Brugger | G. Abstreiter

PROTON-T1 FOR SOLID H-2 IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 711-714 (1985)

V. P. BORK | P. A. FEDDERS | R. E. NORBERG | J. B. BOYCE | M. STUTZMANN

Raman Scattering by Free Carriers in Semiconductor Heterostructures

Proc. of the Winter School on Heterojunctions and Semiconductor Superlattices, Les Houches, France, March 12-21, 1985. Eds.: G. Allan, G. Bastard, N. Boccara, M. Lannoo, and M. Voos. Springer-Verlag, Berlin 1986. 99-107.

ROLE OF MECHANICAL-STRESS IN THE LIGHT-INDUCED DEGRADATION OF HYDROGENATED AMORPHOUS-SILICON

APPLIED PHYSICS LETTERS 47 1 21-23 (1985)

SI-29 HYPERFINE MEASUREMENTS IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 703-706 (1985)

D. K. BIEGELSEN | M. STUTZMANN

Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixGe1-x Superlattices

Phys. Rev. Lett. 54, (22), 2441-2444 (1985)

G. Abstreiter | H. Brugger | T. Wolf | H. Jorke | H. J. Herzog

THE ABSENCE OF THE STAEBLER-WRONSKI EFFECT IN FLUORINATED AMORPHOUS-SILICON

SOLAR CELLS 14 2 191-192 (1985)

M. JANAI | M. STUTZMANN | R. WEIL

Tunable electroluminescence in GaAs-doping multilayer structures

J. Vac. Sci. Technol. B3, (2), 623 (1985)

G. Abstreiter | H. Kirchstetter | K. Ploog

1.3 µm InGaAsP/InP metal-clad ridge-waveguide (MCRW) lasers: waveguide model and lasing characteristics

7th European Workshop on Injection Lasers , Schliersee, Germany (1984).

ELECTRON-SPIN-RESONANCE STUDY OF BORON-DOPED AMORPHOUS SIXGE1-X - H-ALLOYS

PHYSICAL REVIEW B 30 7 3595-3602 (1984)

M. STUTZMANN | R. J. NEMANICH | J. STUKE

Hole sub-bands on silicon surfaces

J. Phys. C:Solid State Phys. 17, 1617-1631 (1984)

M. Baumgartner | G. Abstreiter | E. Bangert

In Situ Investigation of Band Bending during Formation of GaAs-Ge Heterostructures

Phys. Rev. Lett. 52, (2), 141- 144 (1984)

H. Brugger | F. Schäffler | G. Abstreiter

Inelastic Light Scattering in Semiconductor Heterostructures

Festkörperprobleme (Advances in Solid State Physics) 24, 291-309 (1984)
Ed.: P. Grosse. Vieweg, Braunschweig 1984.

Interaction between Electronic and Phonon Raman Scattering in Hole Space Charge Layers on Silicon

Surface Science 142, 357-360 (1984)

M. Baumgartner | G. Abstreiter

KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON

APPLIED PHYSICS LETTERS 45 10 1075-1077 (1984)

M. STUTZMANN | W. B. JACKSON | C. C. TSAI

Light Scattering by Free Carrier Excitations in Semiconductors

Topics in Applied Physics 54: Light Scattering in Solids IV.
Eds.: M. Cardona and G. Güntherodt. Springer-Verlag, Berlin 1984. 5-150.

G. Abstreiter | M. Cardona | A. Pinczuk

Luminescence and Inelastic Light Scattering in GaAs Doping Superlattices

Solid-State Sciences 53: Two-Dimensional Systems, Heterostructures, and Superlattices.
Eds.: G. Bauer, F. Kuchar, and H. Heinrich. Springer-Verlag, Berlin 1984. 232-239.

NEW PARAMAGNETIC STATES IN AMORPHOUS-SILICON AND GERMANIUM

JOURNAL OF NON-CRYSTALLINE SOLIDS 66 1-2 145-150 (1984)

M. STUTZMANN | J. STUKE

Raman Spectroscopy of Semiconductor Surfaces and Heterostructures

Proc. of the 9th Int.Conf. on Raman Spectroscopy, Tokyo, August 27 - September 1, 1984. 386-387 (1984)

Resonant Tunneling in Doping Quantum Well Structures

Surface Science 142, 456-459 (1984)

C. Zeller | G. Abstreiter | K. Ploog

Resonant tunneling in MBE-grown pnp-GaAs quantum well structures

Inst. Phys. Conf. Ser. No. 74, Chapter 5, 339-344 (1984)
Proc. of the 11th Int. Symp. on GaAs and Related Compounds, Biarritz, France, September 26-28, 1984. Ed.: B. de Cremoux. Adam Hilger Ltd, Bristol 1985.

U. Prechtel | C. Zeller | G. Abstreiter | K. Ploog

SOLID HYDROGEN IN HYDROGENATED AMORPHOUS-SILICON

PHYSICAL REVIEW LETTERS 52 7 553-556 (1984)

J. E. GRAEBNER | B. GOLDING | L. C. ALLEN | D. K. BIEGELSEN | M. STUTZMANN

Surface Barrier Formation on (110) GaAs Studied with Raman Spectroscopy

Proc. of the 17th Int.Conf. on the Physics of Semiconductors, San Francisco, USA, August 6-10, 1984. Eds.: J. D. Chadi and W.A. Harrison. Springer-Verlag, N.Y. 1985. 205-208.

F. Schäffler | H. Brugger | G. Abstreiter

THE KINETICS OF FORMATION AND ANNEALING OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

AIP CONFERENCE PROCEEDINGS 120 213-220 (1984)

M. Stutzmann | W. B. Jackson | C. C. Tsai

THE STAEBLER-WRONSKI EFFECT IN UNDOPED A-SI-H - ITS INTRINSIC NATURE AND THE INFLUENCE OF IMPURITIES

AIP CONFERENCE PROCEEDINGS 120 242-249 (1984)

C. C. TSAI | M. STUTZMANN | W. B. JACKSON

A semi-empirical tight-binding theory of the electronic structure of semiconductors

J. Phys. Chem. Solids 44, 365-378 (1983)

P. Vogl | H. P. Hjalmarson | J. D. Dow

ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-GERMANIUM

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 115 1 141-151 (1983)

M. Stutzmann | J. Stuke | H. Dersch

ELECTRON-SPIN-LATTICE RELAXATION IN AMORPHOUS-SILICON AND GERMANIUM

PHYSICAL REVIEW B 28 11 6256-6261 (1983)

M. Stutzmann | D. K. Biegelsen

Fermi Level Pinning on Clean and Covered GaAs (110) Surfaces Studied by Electric-Field Induced Raman Scattering

Chemical Physics 33: Surface Studies with Lasers, 131-134 (1983). Eds.: F. R. Aussenegg, A. Leitner, M. E. Lippitsch. Springer-Verlag, Berlin 1983.

F. Schäffler | G. Abstreiter

Laserdioden - Sendebauelemente hoher Lichtleistung für die optische Nachrichtenuebertragung

Telcom Report 6 (1983) 84-89.

M. C. Amann | K. Mettler | H. D. Wolf

PARAMAGNETIC STATES IN DOPED AMORPHOUS-SILICON AND GERMANIUM

SOLID STATE COMMUNICATIONS 47 8 635-639 (1983)

M. Stutzmann | J. Stuke

Quantization of Photo-excited carriers in GaAs Doping Superlattices

Physica 117B & 118B, 729-731 (1983)

C. Zeller | B. Vinter | G. Abstreiter | K. Ploog

SPIN-LATTICE RELAXATION OF PARAMAGNETIC STATES IN A-SI-H AND A-GE-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 59-6 DEC 137-140 (1983)

D. K. Biegelsen | M. Stutzmann

Subband Energies in Accumulation Layers on InP

Solid State Communications 47, (8), 651-654 (1983)

G. Abstreiter | R. Huber | G. Tränkle | B. Vinter

TEMPERATURE-DEPENDENCE OF ELECTRON-SPIN-RESONANCE SPECTRA OF DOPED AMORPHOUS-GERMANIUM

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 120 1 225-234 (1983)

M. Stutzmann | J. Stuke

ELECTRONIC-PROPERTIES OF DOPED GLOW-DISCHARGE AMORPHOUS-GERMANIUM

SOLAR ENERGY MATERIALS 8 1-3 319-330 (1982)

D. Hauschildt | M. Stutzmann | J. Stuke | H. Dersch

GaInAsP/InP metal-clad ridge-waveguide laser for 1.3 µm

5th European Workshop on Injection Lasers, Saclay, France (1982).

Inelastic Light Scattering in Hole-Accumulation Layers on Silicon

Solid State Communications 44, (5), 673-676 (1982)

G. Abstreiter | U. Claessen | G. Tränkle

Quantization of Photoexcited Electrons in GaAs nipi-Crystals

Surface Science 113, 479-480 (1982)

Quasi-two-dimensional photoexcited carriers in GaAs doping superlattices

Phys. Rev. B26, (4), 2124-2132 (1982)

C. Zeller | B. Vinter | G. Abstreiter | K. Ploog

The Influence of Temperature and Incident Light Intensity on Single Particle and Collective Excitations in Multilayer Structures

Surface Science 113, 85-88 (1982)

C. Zeller | G. Abstreiter | K. Ploog

Calculation of the effective refractive index step for the metal-cladded ridge-waveguide (MCRW) laser

Appl. Optics 20 (1981) 1483-1486.

M. C. Amann | B. Stegmueller

Chemical Trends of Deep Impurity Levels in Covalent Semiconductors

Adv. in Solid State Physics (Festkörperprobleme) XXI (ed. by J. Treusch, Vieweg, Braunschweig, 1981), p. 191-219.

P. Vogl

Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs Superlattice

Phys. Rev. Lett. 47, (12), 864-867 (1981)
Raman spectroscopy as a surface sensitive technique on semiconductors,
H.J. Stolz and G. Abstreiter
J. Vac. Sci. Technol. 19, (3), 380-382 (1981)

Study of GaAs-AlxGa1-xAs Multilayer Systems by Resonant Inelastic Light Scattering Techniques

Inst. Phys. Conf. Ser. No. 56: Chapter 9, 741-749 (1981)
Proc. of the 13th Int. Symp. on GaAs and Related Compounds, Vienna, September 22-24, 1980. Ed.: H. W. Thim. Institute of Physics, Bristol 1981.

G. Abstreiter | C. Zeller

Theory of one- and two-phonon deformation potentials in semiconductors

Journal de Physique C7, 431 (1981)

P. Kocevar | K. Baumann | P. Vogl | W. Pötz

Determination of Existing Stress in Silicon Films on Sapphire Substrate Using Raman Spectroscopy

Solid-State Electronics 23, 31-33 (1980)

T. Englert | G. Abstreiter | J. Pontcharra

Dynamical effects of the interaction between 4f electrons and optical phonons in rare-earth hydroxides, especially in Tb(OH)3 and Nd(OH)3

J. Phys. C: Solid State Phys. 13, 4545-4564 (1980)

Electronic Properties of the Two-Dimensional System at GaAs/Alx-Ga1-xAs Interfaces

Surface Science 98, 117-125 (1980)

Low-threshold-current injection laser with built-in passive waveguiding

Topical Meeting on Integrated and Guided-Wave Optics, Incline Village, Nevada, USA (1980) MC 3-1-MC 3-4.

M. C. Amann | B. Stegmueller

Magnetic "Bragg" Scattering in Antiferromagnets Observed through Raman Scattering from Phonons

J. of Magnetism and Magn. Mat. 15-18, 777-778 (1980)

G. Güntherodt | G. Abstreiter | W. Bauhofer | G. Benedek | E. Anastassakis

New contacting system for low-expense GaAs-AlGaAs light sources

Frequenz 34 (1980) 343-346.

On the theory of the superluminescent diode: 1. stationary behaviour

Archiv für Elektronik und Übertragungstechnik (AEÜ) 34 (1980) 465-468.

J. Boeck | M. C. Amann

On the theory of the superluminescent diode: 2. small signal modulation behaviour

Archiv für Elektronik und Übertragungstechnik (AEÜ) 34 (1980) 514-516.

J. Boeck | M. C. Amann

Optical memory readout by superluminescent diode with integrated photodetector

Electronics Letters 16 (1980) 58-60.

M. C. Amann | A. Kuschmider | J. Boeck

Raman Scattering in a Magnetic Semiconductor

J. of Magnetism and Magn. Mat. 15-18, 821-822 (1980)

G. Güntherodt | R. Merlin | G. Abstreiter

Raman-, LEED- and Auger Spectroscopy of Clean and Oxidized (110) -GaAs -Surfaces

J. Phys. Soc. Japan 49, Suppl. A, 1101-1104 (1980). Eds.: S. Tanaka, Y. Toyozawa.
Proc. of the 15th Int. Conf. on the Physics of Semiconductors, Kyoto, September 1-5, 1980.

H. J. Stolz | G. Abstreiter

Surface Band bending on Clean and Oxidized (110) - GaAs Studied by Raman Spectroscopy

Solid State Communications 36, 857-860 (1980)

H. J. Stolz | G. Abstreiter

AlGaAs/GaAs double-heterostructure superluminescent diodes for optical transmission systems

Frequenz 33 (1979) 278-283.

J. Boeck | M. C. Amann

Coupled Plasmon-L0 Phonon Modes and Lindhard-Mermin Dielectric Function of n-GaAs

Solid State Communications 30, 703-707 (1979)

G. Abstreiter | R. Trommer | M. Cardona | A. Pinczuk

Effects of Uniaxial Stress on the Cyclotron Resonance in Inversion Layers on Si (100)

Solid State Communications 32, 655-658 (1979)

P. Stallhofer | J. P. Kotthaus | G. Abstreiter

High-efficiency superluminescent diodes for optical-fibre transmission

Electronics Letters 15 (1979) 41-42.

M. C. Amann | J. Boeck

Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-

G. Abstreiter and K. Ploog
Phys. Rev. Lett. 42, (19), 1308-1311 (1979)

A. X. Heterojunctions

Modulation bandwidth of superluminescent diodes for optical-fibre transmission

Archiv für Elektronik und Übertragungstechnik (AEÜ) 33 (1979) 64-66.

M. C. Amann | J. Boeck

New stripe-geometry laser with simplified fabrication process

Electronics Letters 15 (1979) 441-442.

Phonon Raman Scattering from Spin Superstructures: Magnetic "Bragg" Scattering

J. of Magnetism and Magn. Mat. 13, 187-188 (1979)

G. Güntherodt | R. Merlin | W. Bauhofer | G. Abstreiter

Resonance Enhancement of Raman Scattering by Electron-Gas Excitations of n-GaAs

Solid State Communications 30, 429-432 (1979)

A. Pinczuk | G. Abstreiter | R. Trommer | M. Cardona

Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement

Electronics Letters 15 (1979) 599-600.

M. C. Amann | W. Proebster

Dynamical effective charges in semiconductors: a pseudopotential approach

J. Phys. C: Solid State Phys, Vol. 11, 1978, p. 251-262

P. Vogl