Welcome to the Holleitner group

 

 

The Holleitner group at the Walter Schottky Institute investigates novel types of photo-electronic systems that consist of mixed organic and inorganic nanosystems such as mesoscopic quantum circuits, molecules, nanocrystals, graphene, carbon nanotubes, and photosynthetic "light harvesting" proteins. Such "hybrid nanosystems" can be constructed by combining sophisticated nanofabrication techniques such as chemical functionalization and self-organization with state of the art top-down nanolithography methods such as electron beam lithography and focused ion beam writing.
One of our main experimental approaches probes the time-resolved optoelectronic transport properties of nanostructures by measuring their photocurrent response in an external electrical circuit with a picosecond time-resolution. The photocurrent signals provide ubiquitous information on excitonic excitations, on charge and heat transfer processes, on spin phenomena as well as on ballistic and quantized optoelectronic transport processes in the nanoscale circuits. Our studies aim to fully exploit the potential of the nanoscale circuits for applications in photovoltaics, as well as communication and information technology.

 

Please, contact us for Diploma and Master theses as well as more details.                 

 

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TUM Technische Universität München TUM Technische Universität München Physik Department Elektrotechnik und Informationstechnik TUM Technische Universität München
 

Events & News

22 Nov 2014

Nanoday at the Deutsches Museum !   more

11 Oct 2014

Tag der offenen Tür am Walter Schottky Institut (WSI) und Zentrum für Nanotechnologie und Nanomaterialien (ZNN)   more

24 Sep 2014

International Workshop “Nanoscale Assembly and Transport in Biosystems” October 7th, 2014 Venue: International Graduate School of Science and Engineering (IGSSE)   more

05 Sep 2014

New research group on diamond quantum sensors   more

17 Jul 2014

The art of photon "bundling"...   more

Seminars

October 21, 2014

Innovative GaN field effect transistors for next generation of power devices from dc to millimeter-wave applications   more