Heteroexpitaxy of diamond and nitrides

A combination of the properties of diamond and AlGaN would allow to overcome the doping bottleneck which limits the applications in both wide band gap semiconductors, with the very interesting additional advantage of using diamond substrates, with an extremely high thermal conductivity. A successful attempt to combine p-type diamond with n-type AlN to obtain a heterojunction bipolar p-n diode has been carried out in our lab.