Heteroexpitaxy of diamond and nitrides

A combination of the properties of diamond and AlGaN would allow to overcome the doping bottleneck which limits the applications in both wide band gap semiconductors, with the very interesting additional advantage of using diamond substrates, with an extremely high thermal conductivity. A successful attempt to combine p-type diamond with n-type AlN to obtain a heterojunction bipolar p-n diode has been carried out in our lab.


TUM Technische Universität München TUM Technische Universität München Physik Department Elektrotechnik und Informationstechnik TUM Technische Universität München
 

Upcoming Events

3.06.2013  
Benno Blaschke
Graphene SGFETs for biosensing applications

poster, Graphene Week 2013, Chemnitz, Germany

 

6.06.2013  
Jose A. Garrido
Graphene sensors for bioelectronic applications

plenary talk, Graphene Week 2013, Chemnitz, Germany

 

3.09.2013  
Roberta Caterino 
Novel functionalization of diamond surfaces for protein-based hybrid systems

talk, International Conference on Diamond and Carbons Materials, Riva del Garda, Italy

 

5.09.2013 
Roberta Caterino
Bio-photovoltaics based on hybrid systems of reaction centers and diamond

talk, International Conference on Diamond and Carbons Materials, Riva del Garda, Italy