Equipment and Infrastructure

Growth of Nanomaterials

The institute has extensive facilities for the growth and preparation of nano-materials using molecular beam epitaxy (MBE) for III-V semiconductors and exfoliation, transfer and printing methods for 2D nano-materials. As detailed on the research pages, the materials grown include GaAs–based heterostructures, novel In(Ga,Al)As–based quantum dots and nanowires on silicon, (In,Ga,Al)N-based heterostructures.   Members of the institute are also preparing mixed nano-materials using 2D layered crystals such as graphene, MoS2 and BN prepared using exfoliation and printing.

Nanofabrication Technologies 

The WSI-ZNN clean room and associated laboratories house state of the art shared facilities for nanoscale structuring of materials using optical, electron and ion-beam lithography, nanoimprint lithography, deposition and material removal technologies (ALD, CVD, PECVD, RIE, chemically assisted RIE), electron beam materials microscopy (STM, TEM) and a wide range of surface analysis, optical microscopy and microstructural characterization techniques (high resolution XRD, XPS, RBS and EDX) 

 

Low Temperature Optical Spectroscopy

Laser spectroscopy provides direct information regarding the size, composition, band structure, symmetry and carrier dynamics in semiconductor nanostructures. The principle experimental methods utilized in our group are emission laser spectroscopy techniques such as photoluminescence (PL) and electroluminescence (EL) together with absorption methods such as PL-excitation spectroscopy (PLE), direct absorption, photocurrent and reflectivity. In addition, light scattering techniques are used to investigate vibrational and electronic excitations.

Several well equipped laser spectroscopy laboratories allow us to perform measurements at ultra low temperatures (~500mK) and with extremely high spatial (<1µm) and spectral (<0.1Å) resolution. This is achieved using one of several low temperature confocal microscopes. Optical excitation is provided by femtosecond / picosecond tunable Ti:Sapphire laser systems or using tunable external cavity diode lasers.

Electrical Characterisation

The institute also houses state of the art equipment for characterisation of the electronic properties of samples including electrical transport spectroscopy (e.g. Hall-Effect, Magneto-Resistance, AC Admittance Spectroscopy, CV Profiling) 

 

 If you are interested to collaborate with us please contact Prof. Finley.

TUM Technische Universität München TUM Technische Universität München Physik Department Elektrotechnik und Informationstechnik TUM Technische Universität München
 

Events & News

17 Jan 2018

ERC Consolidator Grant for Gregor Koblmüller   more

16 Jan 2018

Light-steering of spin-polarized currents in topological insulators   more

10 Aug 2017

Best Poster Awards for Ganpath Veerabathran and Alexander Andrejew at iNOW 2017   more

27 Jun 2017

Best Poster Award at Nanowire Week for Jochen Bissinger   more

15 Mar 2017

Dr. Kai Müller admitted to the “Junges Kolleg” of the Bavarian Academy of Sciences   more

Seminars

March 12, 2018

Two-dimensional coherent spectroscopy of a semiconductor microcavity   more

March 05, 2018

Diamond-organic photovoltaics   more