Coherent superconducting quantum pump
Phys. Rev. B 85, 140504(R) (2012)
F. Hoehne | Y. A. Pashkin | O. V. Astafiev | M. Möttönen | J. P. Pekola | J. Tsai
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Laser-sintered thin films of doped SiGe nanoparticles
Appl. Phys. Lett. 100, 231907 (2012)
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B. Stoib | T. Langmann | S. Matich | T. Antesberger | N. Stein | S. Angst | N. Petermann | R. Schmechel | G. Schierning | D. E. Wolf | H. Wiggers | M. Stutzmann | M. S. Brandt
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Low-cost post-growth treatments of crystalline silicon nanoparticles improving surface and electronic properties
Advanced Functional Materials 22, 1190 (2012)
S. Niesar | R. N. Pereira | A. R. Stegner | N. Erhard | M. Hoeb | A. Baumer | H. Wiggers | M. S. Brandt | M. Stutzmann
Surface acoustic wave driven ferromagnetic resonance in nickel thin films: Theory and experiment
Phys. Rev. B 86, 134415 (2012)
L. Dreher | M. Weiler | M. Pernpeintner | H. Huebl | R. Gross | M. S. Brandt | S. T. B. Goennenwein
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Surface analytical study of carbothermally reduced titania films for electrocatalysis application
Electrochimica Acta 71, 1-9 (2012)
C. Ruediger | F. Maglia | S. Leonardi | M. Sachsenhauser | I. D. Sharp | O. Paschos | J. Kunze
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Thermodynamic Efficiency Limit of Molecular Donor-Acceptor Solar Cells and its Application to Diindenoperylene/C60-Based Planar Heterojunction Devices
Advanced Energy Materials 2, 1100 (2012)
M. Gruber | J. Wagner | K. Klein | U. Hörmann | A. Opitz | M. Stutzmann | W. Brütting
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a-Ge and a-Si as dielectric mirror materials for long-wavelength optoelectronic devices: a comparative study
Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2011).
S. Arafin | K. Klein | K. Vizbaras | M. C. Amann
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Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon
Appl. Phys. Express. 4 021302 (2011)
H. Morishita | E. Abe | W. Akhtar | L. S. Vlasenko | A. Fujimoto | K. Sawano | Y. Shikari | L. Dreher | H. Riemann | N. V. Abrosimov | P. Becker | H. J. Pohl | M. L. W. Thewalt | M. S. Brandt | K. M. Itoh
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Plasma synthesis of nanostructures for improved thermoelectric properties
J. Phys D: Appl. Phys. 44, 174034 (2011)
N. Petermann | N. Stein | G. Schierning | R. Theissmann | B. Stoib | M. S. Brandt | C. Hecht | C. Schulz | H. Wiggers
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Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers
Phys. Rev. Lett 107, 046601 (2011)
F. D. Czeschka | L. Dreher | M. S. Brandt | M. Weiler | M. Althammer | I. M. Imort | G. Reiss | A. Thomas | W. Schoch | W. Limmer | H. Huebl | R. Gross | S. T. B. Goennenwein
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Solution-processed networks of silicon nanocrystals: The role of
internanocrystal medium on semiconducting behavior
The Journal of Physical Chemistry C 115, 20120 (2011)
R. N. Pereira | S. Niesar | W. B. You | A. F. da Cunha | N. Erhard | A. R. Stegner | H. Wiggers | M. G. Willinger | M. Stutzmann | M. S. Brandt
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Strahlenbiophysik, Strahleneffekte, Dosimeter oder Biosensor?
Labor&More 4.11 p52-54 (2011)
M. Hofstetter | J. Howgate | I. D. Sharp | M. Schmid | M. Stutzmann | S. Thalhammer
Strain-Controlled Variation of Magnetoresistive and Magnetic Anisotropy in (Ga,Mn)As
Journal of Superconductivity and Novel Magnetism 23 95 (2008)
W. Limmer | J. Daeubler | L. Dreher | M. Glunk | W. Schoch | S. Schwaiger | R. Sauer
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Damping in high-frequency metallic nanomechanical resonators
Phys. Rev. B 81, 184112
F. Hoehne | Y. A. Pashkin | O. Astafiev | L. Faoro | L. B. Ioffe | Y. Nakamura | J. S. Tsai
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Detection of mechanical resonance of a single-electron transistor by direct current
Appl. Phys. Lett. 96, 263513 (2010)
Y. A. Pashkin | T. F. Li | J. P. Pekola | O. Astafiev | D. A. Knyazev | F. Hoehne | H. Im | Y. Nakamura | J. S. Tsai
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Electron paramagnetic resonance of boron acceptors in isotopically purified silicon
PHYSICAL REVIEW B 81, 161203(R) (2010)
H. Tezuka | A. R. Stegner | A. M. Tyryshkin | S. Shankar | M. L. W. Thewalt | S. A. Lyon | K. M. Itoh | M. S. Brandt
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Interplay of epitaxial strain and perpendicular magnetic anisotropy in insulating ferromagnetic Ga$_{1-x}$Mn$_{x}$P$_{1-y}$N$_{y}$
Phys. Rev. B 81, 205210 (2010)
P. R. Stone | L. Dreher | J. W. Beeman | K. M. Yu | M. S. Brandt | O. D. Dubon
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Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices
Applied Physics Letters 96, 092110 (2010)
M. Hofstetter | J. Howgate | I. D. Sharp | M. Funk | M. Stutzmann | H. Paretzke | S. Thalhammer
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Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance
PHYSICAL REVIEW LETTERS 104, 046402 (2010)
F. Hoehne | H. Huebl | | B. Galler | M. Stutzmann | M. S. Brandt |
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Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to (113)A-oriented layers
Phys. Rev. B 81, 245202 (2010)
L. Dreher | D. Donhauser | J. Daeubler | M. Glunk | C. Rapp | W. Schoch | R. Sauer | W. Limmer
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Magnetic Field Dependence of Dielectric Polarization Echoes in KCl doped with Li
Journal of Physics CS 150, 042028 (2009)
F. Klotz | A. Fleischmann | C. Enss
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Size-distribution evolution of ion-beam-synthesized nanocrystals in silica
PHYSICAL REVIEW B 80 134121 (2009)
C. W. Yuan | D. O. Yi | I. D. Sharp | S. J. Shin | C. Y. Liao | J. Guzman | J. W. Ager III | E. E. Haller | D. C. Chrzan
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Theory of nanocluster size distributions from ion beam synthesis
PHYSICAL REVIEW LETTERS 102 146101 (2009)
C. W. Yuan | D. O. Yi | I. D. Sharp | S. J. Shin | C. Y. Liao | J. Guzman | J. W. Ager III | E. E. Haller | D. C. Chrzan
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Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers
Phys. Rev. B 77, 205210 (2008)
W. Limmer | J. Daeubler | L. Dreher | M. Glunk | W. Schoch | S. Schwaiger | R. Sauer
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Compensation-dependent in-plane magnetization reversal processes in GaMnPS
Phys. Rev. B 78, 214421 (2008)
P. Stone | C. Bihler | M. Kraus | M. A. Scarpulla | J. W. Beeman | K. M. Yu | M. S. Brandt | O. D. Dubon
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GaMnAs/piezoelectric actuator hybrids: A model system for magnetoelastic magnetization manipulation
Phys. Rev. B 78 045203 (2008)
C. Bihler | M. Althammer | A. Brandlmaier | S. Geprägs | M. Weiler | M. Opel | W. Schoch | W. Limmer | R. Gross | M. S. Brandt | S. Goennenwein
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In situ manipulation of magnetic anisotropy in magnetite thin films
PHYSICAL REVIEW B 77 10 104445 (2008)
A. Brandlmaier | S. Geprags | M. Weiler | A. Boger | M. Opel | H. Huebl | C. Bihler | M. S. Brandt | B. Botters | D. Grundler | R. Gross | S. T. B. Goennenwein
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Local structure of Mn in hydrogenated GaMnAs
Phys. Rev. B 78, 235208 (2008)
C. Bihler | G. Ciatto | H. Huebl | G. Martinez-Criado | P. J. Klar | K. Volz | W. Stolz | W. Schoch | W. Limmer | F. Filippone | A. Amore Bonapasta | M. S. Brandt
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Modeling nucleation and growth of encapsulated nanocrystals: Kinetic Monte Carlo simulation and rate theory
PHYSICAL REVIEW B 78 245415 (2008)
D. O. Yi | M. H. Jhon | I. D. Sharp | Q. Xu | C. W. Yuan | C. Y. Liao | J. W. Ager III | E. E. Haller | D. C. Chrzan
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Non-magnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting
JOURNAL OF APPLIED PHYSICS 103 123906 (2008)
M. A. Scarpulla | P. R. Stone | I. D. Sharp | E. E. Haller | O. D. Dubon | J. W. Beeman | K. M. Yu
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Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor
phys. stat. sol. (RRL) 2, 96 (2008)
S. Goennenwein | M. Althammer | C. Bihler | A. Brandlmaier | S. Geprägs | M. Opel | W. Schoch | W. Limmer | R. Gross | M. S. Brandt
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Electrically detected ferromagnetic resonance
APPLIED PHYSICS LETTERS 90 16 162507 (2007)
S. T. B. Goennenwein | S. W. Schink | A. Brandlmaier | A. Boger | M. Opel | R. Gross | R. S. Keizer | T. M. Klapwijk | A. Gupta | H. Huebl | C. Bihler | M. S. Brandt
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Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?
APPLIED PHYSICS LETTERS 90 021920 (2007)
I. A. Buyanova | W. M. Chen | M. Izadifard | S. J. Pearton | C. Bihler | M. S. Brandt | Y. G. Hong | C. W. Tu
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Kinetics of visible light photo-oxidation of Ge nanocrystals: Theory and in situ measurement
APPLIED PHYSICS LETTERS 90 163118 (2007)
I. D. Sharp | Q. Xu | C. W. Yuan | J. W. Beeman | J. W. Ager III | D. C. Chrzan | E. E. Haller
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Magnetocrystalline anisotropy and magnetization reversal in Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting
Phys. Rev. B 75, 214419 (2007)
C. Bihler | M. Kraus | H. Huebl | M. S. Brandt | S. T. B. Goennenwein | M. Opel | M. A. Scarpulla | P. R. Stone | R. Farshchi | O. D. Dubon
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Self- and foreign-atom diffusion in semiconductor isotope heterostructures Part II: Experimental results for silicon
PHYSICAL REVIEW B 75 035211 (2007)
H. Bracht | H. H. Silvestri | I. D. Sharp | E. E. Haller
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Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As
PHYSICAL REVIEW B 74 20 205205 (2006)
W. Limmer | M. Glunk | J. Daeubler | T. Hummel | W. Schoch | R. Sauer | C. Bihler | H. Huebl | M. S. Brandt | S. T. B. Goennenwein
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Compositional tuning of magnetism and electronic transport in Ga1-xMnxP
SOLID STATE COMMUNICATIONS 140 443 (2006)
R. Farshchi | M. A. Scarpulla | P. R. Stone | K. M. Yu | H. H. Silvestri | I. D. Sharp | J. W. Beeman | L. A. Reichertz | E. E. Haller | O. D. Dubon
Electrically detected magnetic resonance in ion-implanted Si : P nanostructures
APPLIED PHYSICS LETTERS 89 18 182115 (2006)
D. R. McCamey | H. Huebl | M. S. Brandt | W. D. Hutchison | J. C. McCallum | R. G. Clark | A. R. Hamilton
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Large melting point hysteresis of Ge nanocrystals embedded in SiO2
PHYSICAL REVIEW LETTERS 97 155701 (2006)
Q. Xu | I. D. Sharp | C. W. Yuan | D. O. Yi | C. Y. Liao | A. M. Glaeser | A. M. Minor | J. W. Beeman | M. C. Ridgway | P. Kluth | J. W. Ager III | D. C. Chrzan | E. E. Haller
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Magnetic anisotropy in (Ga,Mn)As on GaAS(113)As studied by magnetotransport and ferromagnetic resonance
MICROELECTRONICS JOURNAL 37 12 1490-1492 (2006)
W. Limmer | M. Glunk | J. Daeubler | T. Hummel | W. Schoch | C. Bihler | H. Huebl | M. S. Brandt | S. T. B. Goennenwein | R. Sauer
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Mn L3,2 X-ray absorption and magnetic circular dichorism in ferromagnetic Ga1-xMnxP
APPLIED PHYSICS LETTERS 89 012504 (2006)
P. R. Stone | M. A. Scarpulla | R. Farshchi | I. D. Sharp | E. E. Haller | O. D. Dubon | K. M. Yu | J. W. Beeman | E. Arenholz | J. D. Denlinger | H. Ohldag
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Multiband GaNAsP quaternary alloys
APPLIED PHYSICS LETTERS 88 092110 (2006)
K. M. Yu | W. Walukiewicz | J. W. Ager III | D. Bour | R. Farshchi | O. D. Dubon | S. X. Li | I. D. Sharp | E. E. Haller
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Structural properties of Ge nanocrystals embedded in sapphire
JOURNAL OF APPLIED PHYSICS 100 114317 (2006)
I. D. Sharp | Q. Xu | D. O. Yi | C. W. Yuan | J. W. Beeman | K. M. Yu | J. W. Ager III | D. C. Chrzan | E. E. Haller
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Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys
PHYSICA B-CONDENSED MATTER 376 568-570 (2006)
I. A. Buyanova | M. Izadifard | T. Seppanen | J. Birch | W. M. Chen | S. J. Pearton | A. Polimeni | M. Capizzi | M. S. Brandt | C. Bihler | Y. G. Hong | C. W. Tu
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High-purity, isotopically enriched bulk silicon
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 G448 (2005)
J. W. Ager III | J. W. Beeman | W. L. Hansen | E. E. Haller | I. D. Sharp | C. Liao | A. Yang | M. L. W. Thewalt | H. Riemann
Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2
APPLIED PHYSICS LETTERS 86 063107 (2005)
I. D. Sharp | D. O. Yi | Q. Xu | C. Y. Liao | J. W. Beeman | Z. Liliental-Weber | K. M. Yu | D. N. Zakharov | J. W. Ager III | D. C. Chrzan | E. E. Haller
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Stable, free-standing Ge nanocrystals
JOURNAL OF APPLIED PHYSICS 97 124316 (2005)
I. D. Sharp | Q. Xu | C. Y. Liao | D. O. Yi | J. W. Beeman | Z. Liliental-Weber | K. M. Yu | D. N. Zakharov | J. W. Ager III | D. C. Chrzan | E. E. Haller
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Hydrogen control of ferromagnetism in a dilute magnetic semiconductor
PHYSICAL REVIEW LETTERS 92 22 227202 (2004)
S. T. B. Goennenwein | T. A. Wassner | H. Huebl | M. S. Brandt | J. B. Philipp | M. Opel | R. Gross | A. Koeder | W. Schoch | A. Waag
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DX behaviour of Si donors in AlGaN alloys
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 235 1 13-19 (2003)
M. S. Brandt | R. Zeisel | S. T. B. Gonnenwein | M. W. Bayerl | M. Stutzmann
Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative X-ray photoelectron spectroscopy study
J. Appl. Phys. 94, 2289-2294 (2003)
A. Lehner | G. Steinhoff | M. S. Brandt | M. Eickhoff | M. Stutzmann
Investigation of point defects at the high-k oxides/Si(100) interface by electrically detected magnetic resonance
JOURNAL OF NON-CRYSTALLINE SOLIDS 322 1-3 168-173 (2003)
S. Baldovino | S. Nokhrin | G. Scarel | M. Fanciulli | T. Graf | M. S. Brandt
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Prospects for carrier-mediated ferromagnetism in GaN
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 239 2 277-290 (2003)
T. Graf | S. T. B. Goennenwein | M. S. Brandt
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Structural and doping effects in the half-metallic double perovskite A(2)CrWO(6) (A = Sr, Ba, and Ca)
PHYSICAL REVIEW B 68 14 144431 (2003)
J. B. Philipp | P. Majewski | L. Alff | A. Erb | R. Gross | T. Graf | M. S. Brandt | J. Simon | T. Walther | W. Mader | D. Topwal | D. D. Sarma
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Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 93 1-3 39-48 (2002)
E. R. Glaser | W. E. Carlos | G. C. B. Braga | J. A. Freitas | W. J. Moore | B. V. Shanabrook | A. E. Wickenden | D. D. Koleske | R. L. Henry | M. W. Bayerl | M. S. Brandt | H. Obloh | P. Kozodoy | S. P. DenBaars | U. K. Mishra | S. Nakamura | E. Haus | J. S. Speck | J. E. Van Nostrand | M. A. Sanchez | E. Calleja | A. J. Ptak | T. H. Myers | R. J. Molnar
Electron spin resonance of phosphorus in n-type diamond
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 434-441 (2002)
T. Graf | M. S. Brandt | C. E. Nebel | M. Stutzmann | S. Koizumi
Papers presented at the 275. WE-Heraeus-Seminar: Hardware Concepts for Quantum Computing - Bad Honnef, Germany, May 13-15, 2002 - Preface
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 233 3 375-375 (2002)
M. S. Brandt | M. Fanciulli | M. Stutzmann
Band structure and optical properties of germanium sheet polymers
PHYSICAL REVIEW B 64 3 033311|ISSN 0163-1829 (2001)
Z. Hajnal | G. Vogg | L. J. P. Meyer | B. Szucs | M. S. Brandt | T. Frauenheim
Electrically detected magnetic resonance studies of phosphorus doped diamond
PHYSICA B-CONDENSED MATTER 308 593-597 (2001)
T. Graf | M. S. Brandt | C. E. Nebel | M. Stutzmann | S. Koizumi
Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN
PHYSICAL REVIEW B 63 12 art. no.-125203 (2001)
M. W. Bayerl | M. S. Brandt | O. Ambacher | M. Stutzmann | E. R. Glaser | R. L. Henry | A. E. Wickenden | D. D. Koleske | T. Suski | I. Grzegory | S. Porowski
Papers presented at the 247. WE-Heraeus Seminar on New Materials for Multifunctional Sensor Applications Tutzing (Germany), December 13-15, 2000 - Preface
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 1 V-V (2001)
O. Ambacher | M. S. Brandt | C. E. Nebel | M. Stutzmann
Polygermanosilyne calcium hydroxide intercalation compounds formed by topotactic transformation of Ca(Si1-xGex)(2) alloy zintl phases in ambient atmosphere
MONATSHEFTE FUR CHEMIE 132 10 1125-1135 (2001)
G. Vogg | L. J. P. Meyer | C. Miesner | M. S. Brandt | M. Stutzmann
Defects in planar Si pn junctions studied with electrically detected magnetic resonance
APPLIED PHYSICS LETTERS 76 16 2280-2282 (2000)
T. Wimbauer | K. Ito | Y. Mochizuki | M. Horikawa | T. Kitano | M. S. Brandt | M. Stutzmann
DX-behavior of Si in AlN
PHYSICAL REVIEW B 61 R16283-R16286 (2000)
R. Zeisel | M. W. Bayerl | S. T. B. Goennenwein | R. Dimitrov | O. Ambacher | M. S. Brandt | M. Stutzmann
Epitaxial CaGe2 films on germanium
JOURNAL OF CRYSTAL GROWTH 212 1-2 148-154 (2000)
G. Vogg | M. S. Brandt | M. Stutzmann | I. Genchev | A. Bergmaier | L. Gorgens | G. Dollinger
Magnetic resonance investigations of defects in (GaN)-N-14 and (GaN)-N-15
JOURNAL OF APPLIED PHYSICS 88 6 3249-3253 (2000)
M. W. Bayerl | N. M. Reinacher | H. Angerer | O. Ambacher | M. S. Brandt | M. Stutzmann
Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance
PHYSICAL REVIEW LETTERS 84 22 5188-5191 (2000)
S. T. B. Goennenwein | M. W. Bayerl | M. S. Brandt | M. Stutzmann
Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon
JOURNAL OF NON-CRYSTALLINE SOLIDS 266 237-241 (2000)
S. T. B. Goennenwein | M. W. Bayerl | M. S. Brandt | M. Stutzmann
Spin-dependent capacitance of silicon field-effect transistors
APPLIED PHYSICS LETTERS 76 11 1467-1469 (2000)
M. S. Brandt | R. T. Neuberger | M. Stutzmann
Spin-dependent processes in amorphous and microcrystalline silicon: a survey
JOURNAL OF NON-CRYSTALLINE SOLIDS 266 1-22 (2000)
M. Stutzmann | M. S. Brandt | M. W. Bayerl
Capacitively detected magnetic resonance of defects in MOSFETs
PHYSICA B 274 1027-1030 (1999)
M. S. Brandt | R. Neuberger | M. Stutzmann
Capacitively-detected magnetic resonance in hydrogenated amorphous silicon solar cells
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10B L1172-L1174 (1999)
M. S. Brandt | R. T. Neuberger | M. W. Bayerl | M. Stutzmann
From CaSi2 to siloxene: epitaxial silicide and sheet polymer films on silicon
JOURNAL OF CRYSTAL GROWTH 203 4 570-581 (1999)
G. Vogg | M. S. Brandt | M. Stutzmann | M. Albrecht
ODMR of bound excitons in Mg-doped GaN
PHYSICA B 274 120-123 (1999)
M. W. Bayerl | M. S. Brandt | T. Suski | I. Grzegory | S. Porowski | M. Stutzmann
Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes
PHYSICA B 274 811-814 (1999)
E. R. Glaser | T. A. Kennedy | B. R. Bennett | B. V. Shanabrook | L. A. Hemstreet | M. W. Bayerl | M. S. Brandt
Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon
MONATSHEFTE FUR CHEMIE 130 1 79-87 (1999)
G. Vogg | N. Zamanzadeh-Hanebuth | M. S. Brandt | M. Stutzmann | M. Albrecht
The origin of red luminescence from Mg-doped GaN
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 547-550 (1999)
M. W. Bayerl | M. S. Brandt | E. R. Glaser | A. E. Wickenden | D. D. Koleske | R. L. Henry | M. Stutzmann
Vibrational anti-crossing in siloxene
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 215 1 409-412 (1999)
M. S. Brandt | L. Hoppel | N. Zamanzadeh-Hanebuth | G. Vogg | M. Stutzmann
Electrically detected magnetic resonance of a-Si : H at low magnetic fields: the influence of hydrogen on the dangling bond resonance
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 343-347 (1998)
M. S. Brandt | M. W. Bayerl | M. Stutzmann | C. F. O. Graeff
Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance
PHYSICAL REVIEW B 58 8 4892-4902 (1998)
T. Wimbauer | M. S. Brandt | M. W. Bayerl | N. M. Reinacher | M. Stutzmann | D. M. Hofmann | Y. Mochizuki | M. Mizuta
Spin-dependent processes and Mg-acceptors in GaN single quantum well diodes and p-type GaN films
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 210 2 389-393 (1998)
M. W. Bayerl | M. S. Brandt | H. Angerer | O. Ambacher | M. Stutzmann
Vibrational properties of siloxene: isotope substitution studies
JOURNAL OF NON-CRYSTALLINE SOLIDS 230 503-506 (1998)
N. Zamanzadeh-Hanebuth | M. S. Brandt | M. Stutzmann
Electrically detected magnetic resonance (EDMR) of defects in GaN light emitting diodes
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 159 2 R5-R6 (1997)
M. W. Bayerl | M. S. Brandt | M. Stutzmann
Electrically detected magnetic resonance at different microwave frequencies
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 963-968 (1997)
M. S. Brandt | M. W. Bayerl | N. M. Reinacher | T. Wimbauer | M. Stutzmann
Electrically detected magnetic resonance in undoped polyacetylene and polyaniline
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 162 2 713-721 (1997)
C. F. O. Graeff | M. S. Brandt | R. M. Faria | G. Leising
Electronic transport in crystalline siloxene
SOLID STATE COMMUNICATIONS 102 5 365-368 (1997)
M. S. Brandt | T. Puchert | M. Stutzmann
Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 1309-1314 (1997)
T. Wimbauer | M. S. Brandt | M. W. Bayerl | M. Stutzmann | D. M. Hofmann | Y. Mochizuki | M. Mizuta
Properties and applications of MBE grown AlGaN
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 50 1-3 212-218 (1997)
M. Stutzmann | O. Ambacher | A. Cros | M. S. Brandt | H. Angerer | R. Dimitrov | N. Reinacher | T. Metzger | R. Hopler | D. Brunner | F. Freudenberg | R. Handschuh | C. Deger
Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin-film transistors
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 36 1A 121-125 (1997)
G. Kawachi | C. F. O. Graeff | M. S. Brandt | M. Stutzmann
Si-29 nuclear magnetic resonance of luminescent silicon
APPLIED PHYSICS LETTERS 70 2 188-190 (1997)
M. S. Brandt | S. E. Ready | J. B. Boyce
Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport
PHYSICAL REVIEW B 54 11 7957-7964 (1996)
G. Kawachi | C. F. O. Graeff | M. S. Brandt | M. Stutzmann
Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films
THIN SOLID FILMS 276 1-2 100-103 (1996)
T. Fischer | V. PetrovaKoch | K. Shcheglov | M. S. Brandt | F. Koch
Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes
JOURNAL OF APPLIED PHYSICS 80 8 4541-4547 (1996)
N. M. Reinacher | M. S. Brandt | M. Stutzmann
Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence
APPLIED SURFACE SCIENCE 102 323-326 (1996)
M. C. Rossi | M. S. Brandt | M. Stutzmann
Spin-dependent transport in amorphous silicon thin-film transistors
JOURNAL OF NON-CRYSTALLINE SOLIDS 200 1117-1120 (1996)
C. F. O. Graeff | G. Kawachi | M. S. Brandt | M. Stutzmann | M. J. Powell
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 14 6 3532-3542 (1996)
O. Ambacher | M. S. Brandt | R. Dimitrov | T. Metzger | M. Stutzmann | R. A. Fischer | A. Miehr | A. Bergmaier | G. Dollinger
DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
PHYSICAL REVIEW B 52 7 4680-4683 (1995)
C. F. O. GRAEFF | M. S. BRANDT | M. STUTZMANN | M. J. POWELL
RADIATIVE AND NONRADIATIVE RECOMBINATION IN POROUS SILICON - WHAT CAN WE LEARN FROM SPIN-RESONANCE
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 97-106 (1995)
M. STUTZMANN | M. S. BRANDT
Spin-dependent transport in SiC and III-V semiconductor devices
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS 196- 1915-1922 (1995)
N. M. Reinacher | M. S. Brandt | M. Stutzmann
TRIPLET EXCITONS IN POROUS SILICON AND SILOXENE
SOLID STATE COMMUNICATIONS 93 6 473-477 (1995)
M. S. BRANDT | M. STUTZMANN
AN ALTERNATIVE DEGRADATION METHOD FOR AMORPHOUS HYDROGENATED SILICON - THE CONSTANT DEGRADATION METHOD
JOURNAL OF APPLIED PHYSICS 75 5 2507-2515 (1994)
M. S. BRANDT | M. STUTZMANN
HYDROGENATION OF P-TYPE GALLIUM NITRIDE
APPLIED PHYSICS LETTERS 64 17 2264-2266 (1994)
M. S. BRANDT | N. M. JOHNSON | R. J. MOLNAR | R. SINGH | T. D. MOUSTAKAS
LOCAL VIBRATIONAL-MODES IN MG-DOPED GALLIUM NITRIDE
PHYSICAL REVIEW B 49 20 14758-14761 (1994)
M. S. BRANDT | J. W. AGER | W. GOTZ | N. M. JOHNSON | J. S. HARRIS | R. J. MOLNAR | T. D. MOUSTAKAS
OBSERVATIONS ON THE LIMITS TO P-TYPE DOPING IN ZNSE
APPLIED PHYSICS LETTERS 65 8 1001-1003 (1994)
Y. FAN | J. HAN | L. HE | R. L. GUNSHOR | M. S. BRANDT | J. WALKER | N. M. JOHNSON | A. V. NURMIKKO
PULSED-LIGHT SOAKING OF HYDROGENATED AMORPHOUS-SILICON
PHYSICAL REVIEW B 50 16 11592-11605 (1994)
M. STUTZMANN | M. C. ROSSI | M. S. BRANDT
SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON-GERMANIUM ALLOYS
PHYSICAL REVIEW B 49 16 11028-11034 (1994)
C. F. O. GRAEFF | M. STUTZMANN | M. S. BRANDT
ACCELERATED HYDROGEN MIGRATION UNDER STEADY-STATE AND PULSED ILLUMINATION IN A-SI-H
JOURNAL OF NON-CRYSTALLINE SOLIDS 166 273-276 (1993)
P. V. SANTOS | M. S. BRANDT | R. A. STREET | M. STUTZMANN
ELECTRONIC AND STRUCTURAL-PROPERTIES OF POROUS SILICON
JOURNAL OF NON-CRYSTALLINE SOLIDS 166 931-936 (1993)
M. STUTZMANN | M. S. BRANDT | E. BUSTARRET | H. D. FUCHS | M. ROSENBAUER | A. HOPNER | J. WEBER
LUMINESCENCE AND OPTICAL-PROPERTIES OF SILOXENE
JOURNAL OF LUMINESCENCE 57 1-6 321-330 (1993)
M. STUTZMANN | M. S. BRANDT | M. ROSENBAUER | H. D. FUCHS | S. FINKBEINER | J. WEBER | P. DEAK
POROUS SILICON AND SILOXENE - VIBRATIONAL AND STRUCTURAL-PROPERTIES
PHYSICAL REVIEW B 48 11 8172-8183 (1993)
H. D. FUCHS | M. STUTZMANN | M. S. BRANDT | M. ROSENBAUER | J. WEBER | A. BREITSCHWERDT | P. DEAK | M. CARDONA
SPIN-DEPENDENT PHOTOCONDUCTIVITY AS A FUNCTION OF WAVELENGTH - A TEST FOR THE CONSTANT PHOTOCURRENT METHOD IN A-SI-H
JOURNAL OF NON-CRYSTALLINE SOLIDS 166 547-550 (1993)
M. S. BRANDT | M. STUTZMANN
SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS
JOURNAL OF NON-CRYSTALLINE SOLIDS 166 15-18 (1993)
C. F. O. GRAEFF | M. S. BRANDT | K. EBERHARDT | I. CHAMBOULEYRON | M. STUTZMANN
SPIN-DEPENDENT TRANSPORT IN AMORPHOUS-SILICON NIN-STRUCTURES
JOURNAL OF NON-CRYSTALLINE SOLIDS 166 693-696 (1993)
M. S. BRANDT | M. STUTZMANN | J. KOCKA
ACCELERATED STABILITY TEST FOR AMORPHOUS-SILICON SOLAR-CELLS
APPLIED PHYSICS LETTERS 60 14 1709-1711 (1992)
M. C. ROSSI | M. S. BRANDT | M. STUTZMANN
EXCITONIC STATES IN HYDROGENATED AMORPHOUS-SILICON
JOURNAL OF NON-CRYSTALLINE SOLIDS 141 1-3 97-105 (1992)
M. STUTZMANN | M. S. BRANDT
NEW GROWTH TECHNIQUE FOR LUMINESCENT LAYERS ON SILICON
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 54 6 567-569 (1992)
M. S. BRANDT | A. BREITSCHWERDT | H. D. FUCHS | A. HOPNER | M. ROSENBAUER | M. STUTZMANN | J. WEBER
SILOXENE - CHEMICAL QUANTUM CONFINEMENT DUE TO OXYGEN IN A SILICON MATRIX
PHYSICAL REVIEW LETTERS 69 17 2531-2534 (1992)
P. DEAK | M. ROSENBAUER | M. STUTZMANN | J. WEBER | M. S. BRANDT
THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION
SOLID STATE COMMUNICATIONS 81 4 307-312 (1992)
M. S. BRANDT | H. D. FUCHS | M. STUTZMANN | J. WEBER | M. CARDONA
VISIBLE LUMINESCENCE FROM POROUS SILICON AND SILOXENE
PHYSICA SCRIPTA T45 309-313 (1992)
H. D. FUCHS | M. STUTZMANN | M. S. BRANDT | M. ROSENBAUER | J. WEBER | M. CARDONA
VISIBLE LUMINESCENCE FROM SILICON
FESTKORPERPROBLEME - ADVANCES IN SOLID STATE PHYSICS 32 32 179-197 (1992)
M. STUTZMANN | J. WEBER | M. S. BRANDT | H. D. FUCHS | M. ROSENBAUER | P. DEAK | A. HOPNER | A. BREITSCHWERDT
ACCELERATED METASTABLE DEFECT CREATION IN A-SI-H BY SHORT LIGHT-PULSES
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 231-234 (1991)
M. STUTZMANN | J. NUNNENKAMP | M. S. BRANDT | A. ASANO | M. C. ROSSI
EXCITONS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON
APPLIED PHYSICS LETTERS 58 15 1620-1622 (1991)
M. S. BRANDT | M. STUTZMANN
EXPLOSIVE ISOTHERMAL HYDROGEN EXODIFFUSION IN VHF-GD A-SI-H THICK LAYERS
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 53-56 (1991)
E. BUSTARRET | M. BRANDT | M. STUTZMANN | M. FAVRE
FAST METASTABLE-DEFECT CREATION IN AMORPHOUS-SILICON BY FEMTOSECOND LIGHT-PULSES
PHYSICAL REVIEW LETTERS 67 17 2347-2350 (1991)
M. STUTZMANN | J. NUNNENKAMP | M. S. BRANDT | A. ASANO
KINETICS OF LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - THE CONSTANT DEGRADATION METHOD
JOURNAL OF NON-CRYSTALLINE SOLIDS 137 211-214 (1991)
M. S. BRANDT | M. STUTZMANN
SPIN-DEPENDENT CONDUCTIVITY IN AMORPHOUS HYDROGENATED SILICON
PHYSICAL REVIEW B 43 6 5184-5187 (1991)
M. S. BRANDT | M. STUTZMANN
DEUTERIUM EFFUSION MEASUREMENTS IN DOPED CRYSTALLINE SILICON
JOURNAL OF APPLIED PHYSICS 68 3 1406-1409 (1990)
M. STUTZMANN | M. S. BRANDT
DEPOSITION OF SILICON BY DECOMPOSITION OF SILANE VIA HYDROGEN ABSTRACTION
JOURNAL OF NON-CRYSTALLINE SOLIDS 115 1-3 105-107 (1989)
M. S. BRANDT | J. CHRYSOSTOMIDES | S. KOYNOV | V. PETROVAKOCH