Publications of the members of the Brandt group (E25)

Laser-sintered thin films of doped SiGe nanoparticles

arXiv:1201.4370v1

Lock-in detection for pulsed electrically detected magnetic resonance

Rev. Sci. Instr. 83, 043907 (2012)

Low-cost post-growth treatments of crystalline silicon nanoparticles improving surface and electronic properties

Advanced Functional Materials 22, 1190 (2012)

Nuclear Spins of Ionized Phosphorus Donors in Silicon

Phys. Rev. Lett. 108, 027602 (2012)

L. Dreher | F. Hoehne | M. Stutzmann | M. S. Brandt

Ultrahigh gain AlGaN/GaN high energy radiation detectors

physica status solidi (a)

a-Ge and a-Si as dielectric mirror materials for long-wavelength optoelectronic devices: a comparative study

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2011).

S. Arafin | K. Klein | K. Vizbaras | M. C. Amann

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Coplanar stripline antenna design for optically detected magnetic resonance on semiconductor quantum dots

Rev. Sci. Instrum. 82, 074707 (2011)

Development and characterization of EIS structures based on SiO2 micropillars and pores before and after their functionalization with phosphonate films

phys. stat. sol. (a) 208, 1333 (2011)

Development and evaluation of gallium nitride-based thin films for x-ray dosimetry

Physics in Medicine and Biology 56 3215 (2011)

M. Hofstetter | J. Howgate | I. D. Sharp | M. Stutzmann | S. Thalhammer

Efficiency enhancement in hybrid P3HT/silicon nanocrystal solar cells

Green 1, 339 (2011)

Elastically Driven Ferromagnetic Resonance in Nickel Thin Films

Phys. Rev. Lett. 106 117601 (2011)

Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon using Pulsed ENDOR

Phys. Rev. Lett. 106, 187601 (2011)

F. Hoehne | L. Dreher | H. Huebl | M. Stutzmann | M. S. Brandt

Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination

Applied Physics Letters 98, 182106 (2011)

Electrically Detected Electron-Spin-Echo Envelope Modulation: A Highly Sensitive Technique for Resolving Complex Interface Structures

Phys. Rev. Lett. 106, 196101 (2011)

Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon

Phys. Rev. Lett. 106, 037601 (2011)

Graphene Transistor Arrays for Recording Action Potentials from Electrogenic Cells

Advanced Materials 23, 5045 (2011)

High-resolution electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon

Phys. Rev. B 83 235201 (2011)

High-transconductance graphene solution-gated field effect transistors

Applied Physics Letters 99, 033503 (2011)

Linewidth of Low-Field Electrically Detected Magnetic Resonance of Phosphorus in Isotopically Controlled Silicon

Appl. Phys. Express. 4 021302 (2011)

Observation and explanation of strong electrically tunable exciton g factors in composition engineered In(Ga)As quantum dots

Phys. Rev. B 83, 161303(R) (2011)

Plasma synthesis of nanostructures for improved thermoelectric properties

Polymer brushes on graphene

Journal of the American Chemical Society 133, 10490 (2011)

Scaling Behavior of the Spin Pumping Effect in Ferromagnet-Platinum Bilayers

Phys. Rev. Lett 107, 046601 (2011)

Solution-processed networks of silicon nanocrystals: The role of internanocrystal medium on semiconducting behavior

The Journal of Physical Chemistry C 115, 20120 (2011)

Strahlenbiophysik, Strahleneffekte, Dosimeter oder Biosensor?

Labor&More 4.11 p52-54 (2011)

Strain-Controlled Variation of Magnetoresistive and Magnetic Anisotropy in (Ga,Mn)As

Journal of Superconductivity and Novel Magnetism 23 95 (2008)

Thermally induced alkylation of diamond

LANGMUIR 26, 18862 (2010).

Asymmetric optical nuclear spin pumping in a single uncharged quantum dot

Phys. Rev. B 82, 121307(R) (2010)

Damping in high-frequency metallic nanomechanical resonators

Phys. Rev. B 81, 184112

Defect reduction in silicon nanoparticles by low-temperature vacuum annealing

Applied Physics Letters 96, 193112 (2010)

Detection of mechanical resonance of a single-electron transistor by direct current

Appl. Phys. Lett. 96, 263513 (2010)

Electron paramagnetic resonance of boron acceptors in isotopically purified silicon

PHYSICAL REVIEW B 81, 161203(R) (2010)

Graphene Solution-Gated Field-Effect Transistor Array for Sensing Applications

Advanced Functional Materials 20, 3117–3124 (2010)

Interplay of epitaxial strain and perpendicular magnetic anisotropy in insulating ferromagnetic Ga$_{1-x}$Mn$_{x}$P$_{1-y}$N$_{y}$

Phys. Rev. B 81, 205210 (2010)

Isotope effect on electron paramagnetic resonance of boron acceptors in silicon

PHYSICAL REVIEW B 82, 115213 (2010)

Observation of an electrically tunable exciton g factor in InGaAs/GaAs quantum dot

Applied Physics Letters 96, 053113 (2010)

Optically monitoring electron spin relaxation in a single quantum dot using a spin memory device

Phys. Rev. B 82, 245316 (2010)

Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates

Advanced Materials 22, 2632 (2010)

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

Applied Physics Letters 96, 092110 (2010)

Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

PHYSICAL REVIEW LETTERS 104, 046402 (2010)

Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: Application to (113)A-oriented layers

Phys. Rev. B 81, 245202 (2010)

Structured polymer brushes on silicon carbide

CHEMISTRY OF MATERIALS 22 272 (2010)

Dielectric screening versus quantum confinement of phosphorus donors in silicon nanocrystals investigated by magnetic resonance

PHYSICAL REVIEW B 79, 161304(R) (2009)

Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation

PHYSICAL REVIEW B 80, 165326 (2009)

Light-induced charge transfer in hybrid composites of organic semiconductors and silicon nanocrystals

Applied Physics Letters 94, 113301 (2009)

Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration

Phys. Rev. B 79, 195206 (2009)

Magnetic Field Dependence of Dielectric Polarization Echoes in KCl doped with Li

Journal of Physics CS 150, 042028 (2009)

F. Klotz | A. Fleischmann | C. Enss

Manganese-hydrogen complexes in Ga1-xMnxN

PHYSICAL REVIEW B 80, 205205 (2009)

Ordered Si nanoaperture arrays for the measurement of ion currents across lipid membranes

APPLIED PHYSICS LETTERS 95, 023112 (2009)

Size-distribution evolution of ion-beam-synthesized nanocrystals in silica

PHYSICAL REVIEW B 80 134121 (2009)

Spin-wave resonances and surface spin pinning in GaMnAs thin films

Phys. Rev. B 79, 045205 (2009)

C. Bihler | W. Schoch | W. Limmer | S. Goennenwein | M. S. Brandt

Theory of nanocluster size distributions from ion beam synthesis

PHYSICAL REVIEW LETTERS 102 146101 (2009)

Tuning magnetic properties of magnetoelectric BiFeO3-NiFe2O4

J. Mag. Mag. Mat. 321, L5 (2009)

Voltage controlled inversion of magnetic anisotropy

New J. Phys. 11, 013021 (2009)

Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers

Phys. Rev. B 77, 205210 (2008)

Compensation-dependent in-plane magnetization reversal processes in GaMnPS

Phys. Rev. B 78, 214421 (2008)

Electronic properties of doped silicon nanocrystal films

JOURNAL OF APPLIED PHYSICS 104 053701 (2008)

Electronic properties of self-assembled alkyl monolayers on Ge surfaces

APPLIED PHYSICS LETTERS 92 223306 (2008)

I. D. Sharp | S. Schoell | M. Hoeb | M. S. Brandt | M. Stutzmann

Electronic transport in phosphorus-doped silicon nanocrystal networks

PHYSICAL REVIEW LETTERS 100 2 026803 (2008)

Functionalization of 6H-SiC surfaces with organosilanes

APPLIED PHYSICS LETTERS 92 15 153301 (2008)

GaMnAs/piezoelectric actuator hybrids: A model system for magnetoelastic magnetization manipulation

Phys. Rev. B 78 045203 (2008)

In situ manipulation of magnetic anisotropy in magnetite thin films

PHYSICAL REVIEW B 77 10 104445 (2008)

Local structure of Mn in hydrogenated GaMnAs

Phys. Rev. B 78, 235208 (2008)

Modeling nucleation and growth of encapsulated nanocrystals: Kinetic Monte Carlo simulation and rate theory

PHYSICAL REVIEW B 78 245415 (2008)

Non-magnetic compensation in ferromagnetic Ga1-xMnxAs and Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting

JOURNAL OF APPLIED PHYSICS 103 123906 (2008)

Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor

phys. stat. sol. (RRL) 2, 96 (2008)

Spin echoes in the charge transport through phosphorus donors in silicon

PHYSICAL REVIEW LETTERS 100 17 177602 (2008)

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

J. Appl. Phys. 104 013908 (2008)

Black multi-crystalline silicon solar cells

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 2 R53-R55 (2007)

Electrically detected ferromagnetic resonance

APPLIED PHYSICS LETTERS 90 16 162507 (2007)

Electronic transport through Si nanocrystal films: Spin-dependent conductivity studies

PHYSICA B-CONDENSED MATTER 401 527-530 (2007)

Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom?

APPLIED PHYSICS LETTERS 90 021920 (2007)

Kinetics of visible light photo-oxidation of Ge nanocrystals: Theory and in situ measurement

APPLIED PHYSICS LETTERS 90 163118 (2007)

Light-induced dielectrophoretic manipulation of DNA

BIOPHYSICAL JOURNAL 93 1032-1038 (2007)

M. Hoeb | J. O. Radler | S. Klein | M. Stutzmann | M. S. Brandt

Magnetocrystalline anisotropy and magnetization reversal in Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting

Phys. Rev. B 75, 214419 (2007)

Observation of extremely slow hole spin relaxation in self-assembled quantum dots

Phys. Rev. B 76, 241306(R) (2007)

Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

PHYSICA B-CONDENSED MATTER 401 541-545 (2007)

Self- and foreign-atom diffusion in semiconductor isotope heterostructures Part II: Experimental results for silicon

PHYSICAL REVIEW B 75 035211 (2007)

H. Bracht | H. H. Silvestri | I. D. Sharp | E. E. Haller

Thermoelectric effect in laser annealed printed nanocrystalline silicon layers

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 262-264 (2007)

Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As

PHYSICAL REVIEW B 74 20 205205 (2006)

Black nonreflecting silicon surfaces for solar cells

APPLIED PHYSICS LETTERS 88 20 203107 (2006)

Compositional tuning of magnetism and electronic transport in Ga1-xMnxP

SOLID STATE COMMUNICATIONS 140 443 (2006)

Direct biofunctionalization of semiconductors: A survey

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 14 3424-3437 (2006)

M. Stutzmann | J. A. Garrido | M. Eickhoff | M. S. Brandt

Electrical detection of coherent P-31 spin quantum states

NATURE PHYSICS 2 12 835-838 (2006)

Electrically detected magnetic resonance in ion-implanted Si : P nanostructures

APPLIED PHYSICS LETTERS 89 18 182115 (2006)

Large melting point hysteresis of Ge nanocrystals embedded in SiO2

PHYSICAL REVIEW LETTERS 97 155701 (2006)

Magnetic anisotropy in (Ga,Mn)As on GaAS(113)As studied by magnetotransport and ferromagnetic resonance

MICROELECTRONICS JOURNAL 37 12 1490-1492 (2006)

Magnetic anisotropy of Ga1-xMnxAs thin films on GaAs (311)A probed by ferromagnetic resonance

APPLIED PHYSICS LETTERS 89 1 012507 (2006)

Metal-induced seeding of macropore arrays in silicon

ADVANCED MATERIALS 18 5 633-+ (2006)

Mn L3,2 X-ray absorption and magnetic circular dichorism in ferromagnetic Ga1-xMnxP

APPLIED PHYSICS LETTERS 89 012504 (2006)

Multiband GaNAsP quaternary alloys

APPLIED PHYSICS LETTERS 88 092110 (2006)

Phosphorus donors in highly strained silicon

PHYSICAL REVIEW LETTERS 97 16 166402 (2006)

Spin-glass-like behavior of Ge: Mn

PHYSICAL REVIEW B 74 045330 (2006)

Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix

APPLIED PHYSICS LETTERS 88 11 112506 (2006)

Structural properties of Ge nanocrystals embedded in sapphire

JOURNAL OF APPLIED PHYSICS 100 114317 (2006)

Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys

PHYSICA B-CONDENSED MATTER 376 568-570 (2006)

High-purity, isotopically enriched bulk silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 G448 (2005)

Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2

APPLIED PHYSICS LETTERS 86 063107 (2005)

Stable, free-standing Ge nanocrystals

JOURNAL OF APPLIED PHYSICS 97 124316 (2005)

Hydrogen control of ferromagnetism in a dilute magnetic semiconductor

PHYSICAL REVIEW LETTERS 92 22 227202 (2004)

Paramagnetic defects of silicon nanowires

APPLIED PHYSICS LETTERS 85 6 943-945 (2004)

A. Baumer | M. Stutzmann | M. S. Brandt | F. C. K. Au | S. T. Lee

Passivation of Mn acceptors in GaMnAs

APPLIED PHYSICS LETTERS 84 13 2277-2279 (2004)

Charge transfer at the Mn acceptor level in GaN

JOURNAL OF SUPERCONDUCTIVITY 16 1 83-86 (2003)

DX behaviour of Si donors in AlGaN alloys

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 235 1 13-19 (2003)

M. S. Brandt | R. Zeisel | S. T. B. Gonnenwein | M. W. Bayerl | M. Stutzmann

Ferromagnetic resonance in Ga1-xMnxAs

JOURNAL OF SUPERCONDUCTIVITY 16 1 75-78 (2003)

Growth and characterization of GaN : Mn epitaxial films

JOURNAL OF APPLIED PHYSICS 93 12 9697-9702 (2003)

Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study

JOURNAL OF APPLIED PHYSICS 94 4 2289-2294 (2003)

A. Lehner | G. Steinhoff | M. S. Brandt | M. Eickhoff | M. Stutzmann

Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative X-ray photoelectron spectroscopy study

J. Appl. Phys. 94, 2289-2294 (2003)

A. Lehner | G. Steinhoff | M. S. Brandt | M. Eickhoff | M. Stutzmann

Hyperfine interactions at dangling bonds in amorphous germanium

PHYSICAL REVIEW B 68 20 205208 (2003)

Investigation of point defects at the high-k oxides/Si(100) interface by electrically detected magnetic resonance

JOURNAL OF NON-CRYSTALLINE SOLIDS 322 1-3 168-173 (2003)

Kinetics of the topotactic formation of siloxene

CHEMISTRY OF MATERIALS 15 4 910-915 (2003)

G. Vogg | M. S. Brandt | M. Stutzmann

Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces

APPLIED PHYSICS LETTERS 82 4 565-567 (2003)

Prospects for carrier-mediated ferromagnetism in GaN

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 239 2 277-290 (2003)

T. Graf | S. T. B. Goennenwein | M. S. Brandt

Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films

PHYSICAL REVIEW B 67 16 165215 (2003)

Spin wave resonance in Ga1-xMnxAs

APPLIED PHYSICS LETTERS 82 5 730-732 (2003)

Structural and doping effects in the half-metallic double perovskite A(2)CrWO(6) (A = Sr, Ba, and Ca)

PHYSICAL REVIEW B 68 14 144431 (2003)

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 93 1-3 39-48 (2002)

Electron spin resonance of phosphorus in n-type diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 434-441 (2002)

T. Graf | M. S. Brandt | C. E. Nebel | M. Stutzmann | S. Koizumi

Papers presented at the 275. WE-Heraeus-Seminar: Hardware Concepts for Quantum Computing - Bad Honnef, Germany, May 13-15, 2002 - Preface

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 233 3 375-375 (2002)

M. S. Brandt | M. Fanciulli | M. Stutzmann

The Mn3+/2+ acceptor level in group III nitrides

APPLIED PHYSICS LETTERS 81 27 5159-5161 (2002)

T. Graf | M. Gjukic | M. S. Brandt | M. Stutzman | O. Ambacher

Band structure and optical properties of germanium sheet polymers

PHYSICAL REVIEW B 64 3 033311|ISSN 0163-1829 (2001)

Defect-related noise in AlN and AlGaN alloys

PHYSICA B-CONDENSED MATTER 308 69-72 (2001)

Efficient tunable luminescence of SiGe alloy sheet polymers

APPLIED PHYSICS LETTERS 78 25 3956-3958 (2001)

G. Vogg | A. J. P. Meyer | C. Miesner | M. S. Brandt | M. Stutzmann

Elastic properties of the layered zintl-phase CaSi2

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 2 213-219 (2001)

G. Vogg | M. S. Brandt | M. Stutzmann

Electrically detected magnetic resonance studies of phosphorus doped diamond

PHYSICA B-CONDENSED MATTER 308 593-597 (2001)

T. Graf | M. S. Brandt | C. E. Nebel | M. Stutzmann | S. Koizumi

Epitaxial alloy films of zintl-phase Ca(Si1-xGex)(2)

JOURNAL OF CRYSTAL GROWTH 223 4 573-576 (2001)

G. Vogg | C. Miesner | M. S. Brandt | M. Stutzmann | G. Abstreiter

g values of effective mass donors in AlxGa1-xN alloys

PHYSICAL REVIEW B 63 16 165204|ISSN 0163-1829 (2001)

Generation-recombination noise of DX centers in AlN : Si

APPLIED PHYSICS LETTERS 79 15 2396-2398 (2001)

Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN

PHYSICAL REVIEW B 63 12 art. no.-125203 (2001)

Papers presented at the 247. WE-Heraeus Seminar on New Materials for Multifunctional Sensor Applications Tutzing (Germany), December 13-15, 2000 - Preface

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 1 V-V (2001)

O. Ambacher | M. S. Brandt | C. E. Nebel | M. Stutzmann

Polygermanosilyne calcium hydroxide intercalation compounds formed by topotactic transformation of Ca(Si1-xGex)(2) alloy zintl phases in ambient atmosphere

MONATSHEFTE FUR CHEMIE 132 10 1125-1135 (2001)

G. Vogg | L. J. P. Meyer | C. Miesner | M. S. Brandt | M. Stutzmann

Spin-dependent electronic noise

PHYSICA E 10 1-3 67-70 (2001)

M. S. Brandt | S. T. B. Goennenwein | M. Stutzmann

Defects in planar Si pn junctions studied with electrically detected magnetic resonance

APPLIED PHYSICS LETTERS 76 16 2280-2282 (2000)

DX-behavior of Si in AlN

PHYSICAL REVIEW B 61 R16283-R16286 (2000)

Epitaxial CaGe2 films on germanium

JOURNAL OF CRYSTAL GROWTH 212 1-2 148-154 (2000)

Magnetic resonance investigations of defects in (GaN)-N-14 and (GaN)-N-15

JOURNAL OF APPLIED PHYSICS 88 6 3249-3253 (2000)

Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance

PHYSICAL REVIEW LETTERS 84 22 5188-5191 (2000)

S. T. B. Goennenwein | M. W. Bayerl | M. S. Brandt | M. Stutzmann

Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 237-241 (2000)

S. T. B. Goennenwein | M. W. Bayerl | M. S. Brandt | M. Stutzmann

Polygermyne - A prototype system for layered germanium polymers

ADVANCED MATERIALS 12 17 1278-+ (2000)

G. Vogg | M. S. Brandt | M. Stutzmann

Spin-dependent capacitance of silicon field-effect transistors

APPLIED PHYSICS LETTERS 76 11 1467-1469 (2000)

M. S. Brandt | R. T. Neuberger | M. Stutzmann

Spin-dependent processes in amorphous and microcrystalline silicon: a survey

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 1-22 (2000)

M. Stutzmann | M. S. Brandt | M. W. Bayerl

Capacitively detected magnetic resonance of defects in MOSFETs

PHYSICA B 274 1027-1030 (1999)

M. S. Brandt | R. Neuberger | M. Stutzmann

Capacitively-detected magnetic resonance in hydrogenated amorphous silicon solar cells

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10B L1172-L1174 (1999)

M. S. Brandt | R. T. Neuberger | M. W. Bayerl | M. Stutzmann

Electrically detected magnetic resonance of two-dimensional electron gases in Si SiGe heterostructures

PHYSICAL REVIEW B 59 20 13242-13250 (1999)

Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe

Phys. Rev. B 59, 13242-13250 (1999)

From CaSi2 to siloxene: epitaxial silicide and sheet polymer films on silicon

JOURNAL OF CRYSTAL GROWTH 203 4 570-581 (1999)

G. Vogg | M. S. Brandt | M. Stutzmann | M. Albrecht

ODMR of bound excitons in Mg-doped GaN

PHYSICA B 274 120-123 (1999)

Optical and magnetic resonance studies of As-impurities in AlSb: from isoelectronic point defects to planes

PHYSICA B 274 811-814 (1999)

Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon

MONATSHEFTE FUR CHEMIE 130 1 79-87 (1999)

G. Vogg | N. Zamanzadeh-Hanebuth | M. S. Brandt | M. Stutzmann | M. Albrecht

The origin of red luminescence from Mg-doped GaN

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 547-550 (1999)

Vibrational anti-crossing in siloxene

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 215 1 409-412 (1999)

M. S. Brandt | L. Hoppel | N. Zamanzadeh-Hanebuth | G. Vogg | M. Stutzmann

Electrically detected magnetic resonance of a-Si : H at low magnetic fields: the influence of hydrogen on the dangling bond resonance

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 343-347 (1998)

M. S. Brandt | M. W. Bayerl | M. Stutzmann | C. F. O. Graeff

Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance

PHYSICAL REVIEW B 58 8 4892-4902 (1998)

Spin-dependent processes and Mg-acceptors in GaN single quantum well diodes and p-type GaN films

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 210 2 389-393 (1998)

M. W. Bayerl | M. S. Brandt | H. Angerer | O. Ambacher | M. Stutzmann

Vibrational properties of siloxene: isotope substitution studies

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 503-506 (1998)

N. Zamanzadeh-Hanebuth | M. S. Brandt | M. Stutzmann

Electrically detected magnetic resonance (EDMR) of defects in GaN light emitting diodes

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 159 2 R5-R6 (1997)

M. W. Bayerl | M. S. Brandt | M. Stutzmann

Electrically detected magnetic resonance at different microwave frequencies

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 963-968 (1997)

M. S. Brandt | M. W. Bayerl | N. M. Reinacher | T. Wimbauer | M. Stutzmann

Electrically detected magnetic resonance in undoped polyacetylene and polyaniline

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 162 2 713-721 (1997)

C. F. O. Graeff | M. S. Brandt | R. M. Faria | G. Leising

Electronic transport in crystalline siloxene

SOLID STATE COMMUNICATIONS 102 5 365-368 (1997)

M. S. Brandt | T. Puchert | M. Stutzmann

Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 1309-1314 (1997)

Properties and applications of MBE grown AlGaN

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 50 1-3 212-218 (1997)

Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin-film transistors

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 36 1A 121-125 (1997)

G. Kawachi | C. F. O. Graeff | M. S. Brandt | M. Stutzmann

Si-29 nuclear magnetic resonance of luminescent silicon

APPLIED PHYSICS LETTERS 70 2 188-190 (1997)

M. S. Brandt | S. E. Ready | J. B. Boyce

Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport

PHYSICAL REVIEW B 54 11 7957-7964 (1996)

G. Kawachi | C. F. O. Graeff | M. S. Brandt | M. Stutzmann

Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films

THIN SOLID FILMS 276 1-2 100-103 (1996)

T. Fischer | V. PetrovaKoch | K. Shcheglov | M. S. Brandt | F. Koch

Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes

JOURNAL OF APPLIED PHYSICS 80 8 4541-4547 (1996)

N. M. Reinacher | M. S. Brandt | M. Stutzmann

Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence

APPLIED SURFACE SCIENCE 102 323-326 (1996)

M. C. Rossi | M. S. Brandt | M. Stutzmann

Spin-dependent transport in amorphous silicon thin-film transistors

JOURNAL OF NON-CRYSTALLINE SOLIDS 200 1117-1120 (1996)

C. F. O. Graeff | G. Kawachi | M. S. Brandt | M. Stutzmann | M. J. Powell

Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 14 6 3532-3542 (1996)

DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS

PHYSICAL REVIEW B 52 7 4680-4683 (1995)

C. F. O. GRAEFF | M. S. BRANDT | M. STUTZMANN | M. J. POWELL

RADIATIVE AND NONRADIATIVE RECOMBINATION IN POROUS SILICON - WHAT CAN WE LEARN FROM SPIN-RESONANCE

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 97-106 (1995)

M. STUTZMANN | M. S. BRANDT

Spin-dependent transport in SiC and III-V semiconductor devices

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS 196- 1915-1922 (1995)

N. M. Reinacher | M. S. Brandt | M. Stutzmann

TRIPLET EXCITONS IN POROUS SILICON AND SILOXENE

SOLID STATE COMMUNICATIONS 93 6 473-477 (1995)

AN ALTERNATIVE DEGRADATION METHOD FOR AMORPHOUS HYDROGENATED SILICON - THE CONSTANT DEGRADATION METHOD

JOURNAL OF APPLIED PHYSICS 75 5 2507-2515 (1994)

HYDROGENATION OF P-TYPE GALLIUM NITRIDE

APPLIED PHYSICS LETTERS 64 17 2264-2266 (1994)

M. S. BRANDT | N. M. JOHNSON | R. J. MOLNAR | R. SINGH | T. D. MOUSTAKAS

LOCAL VIBRATIONAL-MODES IN MG-DOPED GALLIUM NITRIDE

PHYSICAL REVIEW B 49 20 14758-14761 (1994)

OBSERVATIONS ON THE LIMITS TO P-TYPE DOPING IN ZNSE

APPLIED PHYSICS LETTERS 65 8 1001-1003 (1994)

PULSED-LIGHT SOAKING OF HYDROGENATED AMORPHOUS-SILICON

PHYSICAL REVIEW B 50 16 11592-11605 (1994)

M. STUTZMANN | M. C. ROSSI | M. S. BRANDT

SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON-GERMANIUM ALLOYS

PHYSICAL REVIEW B 49 16 11028-11034 (1994)

C. F. O. GRAEFF | M. STUTZMANN | M. S. BRANDT

ACCELERATED HYDROGEN MIGRATION UNDER STEADY-STATE AND PULSED ILLUMINATION IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 273-276 (1993)

P. V. SANTOS | M. S. BRANDT | R. A. STREET | M. STUTZMANN

ELECTRONIC AND STRUCTURAL-PROPERTIES OF POROUS SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 931-936 (1993)

LUMINESCENCE AND OPTICAL-PROPERTIES OF SILOXENE

JOURNAL OF LUMINESCENCE 57 1-6 321-330 (1993)

POROUS SILICON AND SILOXENE - VIBRATIONAL AND STRUCTURAL-PROPERTIES

PHYSICAL REVIEW B 48 11 8172-8183 (1993)

SPIN-DEPENDENT PHOTOCONDUCTIVITY AS A FUNCTION OF WAVELENGTH - A TEST FOR THE CONSTANT PHOTOCURRENT METHOD IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 547-550 (1993)

SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 15-18 (1993)

C. F. O. GRAEFF | M. S. BRANDT | K. EBERHARDT | I. CHAMBOULEYRON | M. STUTZMANN

SPIN-DEPENDENT TRANSPORT IN AMORPHOUS-SILICON NIN-STRUCTURES

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 693-696 (1993)

M. S. BRANDT | M. STUTZMANN | J. KOCKA

ACCELERATED STABILITY TEST FOR AMORPHOUS-SILICON SOLAR-CELLS

APPLIED PHYSICS LETTERS 60 14 1709-1711 (1992)

M. C. ROSSI | M. S. BRANDT | M. STUTZMANN

EXCITONIC STATES IN HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 141 1-3 97-105 (1992)

M. STUTZMANN | M. S. BRANDT

NEW GROWTH TECHNIQUE FOR LUMINESCENT LAYERS ON SILICON

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 54 6 567-569 (1992)

SILOXENE - CHEMICAL QUANTUM CONFINEMENT DUE TO OXYGEN IN A SILICON MATRIX

PHYSICAL REVIEW LETTERS 69 17 2531-2534 (1992)

P. DEAK | M. ROSENBAUER | M. STUTZMANN | J. WEBER | M. S. BRANDT

SPIN-DEPENDENT EFFECTS IN POROUS SILICON

APPLIED PHYSICS LETTERS 61 21 2569-2571 (1992)

THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION

SOLID STATE COMMUNICATIONS 81 4 307-312 (1992)

M. S. BRANDT | H. D. FUCHS | M. STUTZMANN | J. WEBER | M. CARDONA

VISIBLE LUMINESCENCE FROM POROUS SILICON AND SILOXENE

PHYSICA SCRIPTA T45 309-313 (1992)

VISIBLE LUMINESCENCE FROM SILICON

FESTKORPERPROBLEME - ADVANCES IN SOLID STATE PHYSICS 32 32 179-197 (1992)

ACCELERATED METASTABLE DEFECT CREATION IN A-SI-H BY SHORT LIGHT-PULSES

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 231-234 (1991)

M. STUTZMANN | J. NUNNENKAMP | M. S. BRANDT | A. ASANO | M. C. ROSSI

EXCITONS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON

APPLIED PHYSICS LETTERS 58 15 1620-1622 (1991)

EXPLOSIVE ISOTHERMAL HYDROGEN EXODIFFUSION IN VHF-GD A-SI-H THICK LAYERS

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 53-56 (1991)

E. BUSTARRET | M. BRANDT | M. STUTZMANN | M. FAVRE

FAST METASTABLE-DEFECT CREATION IN AMORPHOUS-SILICON BY FEMTOSECOND LIGHT-PULSES

PHYSICAL REVIEW LETTERS 67 17 2347-2350 (1991)

M. STUTZMANN | J. NUNNENKAMP | M. S. BRANDT | A. ASANO

KINETICS OF LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - THE CONSTANT DEGRADATION METHOD

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 211-214 (1991)

SPIN-DEPENDENT CONDUCTIVITY IN AMORPHOUS HYDROGENATED SILICON

PHYSICAL REVIEW B 43 6 5184-5187 (1991)