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III–V Semiconductor Materials

The III–V semiconductor materials group provides a broad array of research activities in epitaxial growth of advanced heterostructures and nanostructures, and the characterization of their structural, electronic, optical and thermal properties. Most of our work capitalizes on the superior electronic and optoelectronic properties of the III–V materials, and exploitation of sophisticated effects at the nanoscale to test their performance in related devices. Large emphasis is placed on molecular beam epitaxial (MBE) growth of ultra–high mobility GaAs–based two–dimensional electron gas (2DEG) heterostructures, novel In(Ga,Al)As–based quantum dots and nanowires on silicon and unique in situ methods (cleaved edge overgrowth) for nanofabrication of sub-nanometer patterns for organic and molecular electronics. All of our work employs the newly established, advanced nanofabrication and characterization facilities at the Center for Nanotechnology and Nanomaterials at WSI.

Group members

Group Leader Ph.D. Students

Engineer Diploma/Master Students

Bachelor Students/Interns

Ludwig Asen, Jonathan Becker, Bernhard Loitsch, Pascal Wittlich

Alumni (Diploma Students)

Andreas Brenneis, Florian Herzog, Emanuel Forster, Nicolas Hörmann

Current Research Topics

: Growth and Material Aspects of III-As Nanowires

: Electronic States in Single and coupled QDs

: MBE Stamps for Nano-Antenna Arrays

: Growth and Transport of (111) AlAs QWs

Funding

Funding by the following institutions is gratefully acknowledged

Deutsche Forschungsgemeinschaft (Sonderforschungsbereich SFB 631)
Nanosystems Initiative Munich (NIM)
Marie Curie Actions – FP7–People – International Reintegration Grant (IRG)
Bavaria California Technology Center
EU FP7 project SOLID

Positions

We are always interested in highly motivated students or researchers who would like to work on III–V semiconductor hetero- and nanostructures. Interested applicants should contact Dr. Gregor Koblmüller or Prof. Gerhard Abstreiter

Currently available:

Recent Publications

A list of recent publications can be found here

Previous Publications (group leader)

A list of all previous publications of the group leader can be found here

Contact

Dr. Gregor Koblmüller
Tel :: +49 89 289 12779

Office :: S315
Email :: gregor.koblmueller@wsi.tum.de

Events (2011)

11/28-12/02 2011 MRS Fall Meeting, Boston

Purely Catalyst-free MBE Growth and Electrical Properties of InAs NWs on Si
Simon Hertenberger – Oral Presentation
Optoelectronic Properties of Core-Shell GaAs-AlGaAs NW Heterostructures
Daniel Rudolph – Oral Presentation

09/11-09/16 SemiconNano 2011, Traunkirchen Austria

Self-assembled and Site-selective Growth of InAs NWs
Simon Hertenberger – Oral Presentation
Catalyst-free MBE Growth of (Al)GaAs NW Heterostructures on Si
Daniel Rudolph – Poster Presentation

09/08-09/09 Topical Workshop on Arsenide-based NWs, PDI Berlin

Self-induced and Site-controlled Growth of Vertical Group-III Arsenide Nanowires
Simon Hertenberger, Daniel Rudolph, and Gregor Koblmüller - Invited Talk

07/25-07/29 EP2DS19/MSS15, Tallahassee, Florida

Au-free GaAs NWs on Silicon
Daniel Rudolph– Poster Presentation

05/22-05/26 International Symposium on Compound Semiconductors (ISCS), Berlin

Catalyst-free Growth of InAs NW Arrays on Si (111) by MBE
Gregor Koblmüller– Invited Talk -

05/09-05/13 E-MRS Spring Meeting, Nice, France

Polar and Non-Polar InN grown by MBE
Gregor Koblmüller– Invited Talk

04/21-04/25 Villa Conference on Interactions Among Nanostructures (VCIAN-2011), Las Vegas

Site-controlled Growth and Properties of Catalyst-free III-As NW Arrays on Si
Gregor Koblmüller– Invited Talk

03/13–03/18 DPG Frühjahrstagung, Dresden

Autocatalytic Growth of GaAs NWs on Si (111) using different SiOx Templates
Watcharapong Paosangthong– Oral Presentation
Optical Properties of Positioned InAs-based NW Arrays
Andreas Brenneis– Poster Presentation