Marco Hoeb



One basic requirement for semiconductor biosensors based on hybrid organic-inorganic structures is the covalent attachment of functional organic layers to the semiconductor surface – the so-called functionalization. Due to the different polytypes and its excellent biocompatibility, Silicon Carbide (SiC) in this context is a very promising semiconductor with a wide bandgap, composed in equal parts of silicon and carbon.

One way to attach organic alkyl monolayers to semiconductors without an intermediate oxide layer is based on hydrogen-termination of the semiconductor surface. In the case of silicon, the formation of Si-H bonds on the surface can be achieved using hydrofluoric acid. The functionalization process, which selectively attaches alkene molecules to the surface Si-H bonds, is known as hydrosilylation. This is a chain reaction process, where the surface-bound hydrogen is homolytically cleaved and the organic molecule binds to the silicon surface via an Si-C bond. Our work is focused on the extension of this process to Silicon Carbide, which in contrast to silicon offers the opportunity to exploit the crystal polarity and the variation of the energy position of the conduction band edge amongst the various SiC polytypes to tailor the interaction between the semiconductor substrate and the functionalization layer.

The heterostructure composed of the electrically insulating alkyl monolayer and the SiC as the substrate represents an ideal model to investigate the influence of the interface dipole layer and of the changes in the HOMO-LUMO gap (highest occupied molecular orbital - lowest unoccupied molecular orbital) of the grafted molecule on charge carrier transport across the interface as well as to compare the electrical quality of the alkyl layer to that of thermal oxides.



Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination

Applied Physics Letters 98, 182106 (2011)

S. Schoell | J. Howgate | M. Hoeb | M. Auernhammer | J. A. Garrido | M. Stutzmann | I. D. Sharp

Online Reference

Thermally induced alkylation of diamond

LANGMUIR 26, 18862 (2010).

M. Hoeb | M. Auernhammer | S. Schoell | M. S. Brandt | J. A. Garrido | M. Stutzmann | I. D. Sharp

Online Reference

Defect reduction in silicon nanoparticles by low-temperature vacuum annealing


S. Niesar | A. R. Stegner | R. N. Pereira | M. Hoeb | H. Wiggers | M. S. Brandt | M. Stutzmann

Online Reference

Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates

Advanced Materials 22, 2632 (2010)

J. Howgate | S. Schoell | M. Hoeb | W. Steins | B. Baur | S. Hertrich | B. Nickel | I. D. Sharp | M. Stutzmann | M. Eickhoff

Online Reference

Manganese-hydrogen complexes in Ga1-xMnxN

PHYSICAL REVIEW B 80, 205205 (2009)

C. Bihler | U. Gerstmann | M. Hoeb | T. Graf | M. Gjukic | W. G. Schmidt | M. Stutzmann | M. S. Brandt

Online Reference

Electronic properties of self-assembled alkyl monolayers on Ge surfaces


I. D. Sharp | S. Schoell | M. Hoeb | M. S. Brandt | M. Stutzmann

Online Reference

Functionalization of 6H-SiC surfaces with organosilanes

APPLIED PHYSICS LETTERS 92 15 153301 (2008)

S. J. Schoell | M. Hoeb | I. D. Sharp | W. Steins | M. Eickhoff | M. Stutzmann | M. S. Brandt

Online Reference

Light-induced dielectrophoretic manipulation of DNA

BIOPHYSICAL JOURNAL 93 1032-1038 (2007)

M. Hoeb | J. O. Radler | S. Klein | M. Stutzmann | M. S. Brandt

Online Reference

TUM Technische Universität München TUM Technische Universität München Physik Department Elektrotechnik und Informationstechnik TUM Technische Universität München

Events & News

17 Jan 2018

ERC Consolidator Grant for Gregor Koblmüller   more

10 Aug 2017

Best Poster Awards for Ganpath Veerabathran and Alexander Andrejew at iNOW 2017   more

27 Jun 2017

Best Poster Award at Nanowire Week for Jochen Bissinger   more

15 Mar 2017

Dr. Kai Müller admitted to the “Junges Kolleg” of the Bavarian Academy of Sciences   more

27 Feb 2017

Two-photon pulses from a single two-level system   more


January 26, 2018

Reliability of hexagonal boron nitride dielectric stacks for CMOS applications   more

January 23, 2018

Helical states, spin-orbit coupling, and phase-coherent transport in InAs nanowires   more

January 16, 2018

New insights into novel (and conventional) materials using polarization-sensitive infrared magneto-spectroscopy   more