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Functional Polymer Brushes on Hydrogenated Graphene

Chemistry of Materials 25, 466-470 (2013)

Organic Functionalization of 3C-SiC Surfaces

ACS Appl. Mater. Interfaces, 5 (4), pp 1393–1399 (2013)

Reduced threading dislocation densities densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy

Appl. Phys. Lett. 102, 051916 (2013).

B. Loitsch | F. Schuster | M. Stutzmann | G. Koblmueller

Biofunctional Electrolyte-Gated Organic Field-Effect Transistors

Advanced Materials 24, 4511 (2012)

F. Buth | A. Donner | M. Sachsenhauser | M. Stutzmann | J. A. Garrido

Charge state manipulation of qubits in diamond

Nature Communications 3, 729 (2012)

Charge Transfer across the n-Type GaN-Electrolyte Interface

Journal of Physical Chemistry C 116, 22281 (2012)

S. Schäfer | A. H. R. Koch | A. Cavallini | M. Stutzmann | I. D. Sharp

Diamond solution-gated field effect transistors: Properties and bioelectronic applications

physica status solidi (a)

M. Dankerl | M. Hauf | M. Stutzmann | J. A. Garrido

Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange

Scripta Materialia 66, 550--553 (2012)
DOI:10.1016/j.scriptamat.2011.12.045

B. I. Birajdar | T. Antesberger | B. Butz | M. Stutzmann | E. Spiecker

Enzyme-modified electrolyte-gated organic field effect transistors

Proceedings of the SPIE 8479 - Organic Semiconductors in Sensors and Bioelectronics V 84790M (2012)

F. Buth | A. Donner | M. Stutzmann | J. A. Garrido

Fabrication of large-grained thin polycrystalline silicon films on foreign substrates by titanium-assisted metal-induced layer exchange

Journal Of Applied Physics 112, 123509 (2012)

Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy

Appl. Phys. Lett. 101, 122106 (2012)

In vitro bio-functionality of gallium nitride sensors for radiation biophysics

Biochemical and Biophysical Research Communications 424 2 348-353 (2012)

Laser-sintered thin films of doped SiGe nanoparticles

Appl. Phys. Lett. 100, 231907 (2012)

Copyright (2012) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Lock-in detection for pulsed electrically detected magnetic resonance

Rev. Sci. Instr. 83, 043907 (2012)

Low-cost post-growth treatments of crystalline silicon nanoparticles improving surface and electronic properties

Advanced Functional Materials 22, 1190 (2012)

Morphology, thermoelectric properties and wet-chemical doping of laser-sintered germanium nanoparticles

Phys. Stat. Solidi A, 210, 153 (2013)

Nuclear Spins of Ionized Phosphorus Donors in Silicon

Phys. Rev. Lett. 108, 027602 (2012)

L. Dreher | F. Hoehne | M. Stutzmann | M. S. Brandt

Platinum Nanoparticles on Gallium Nitride Surfaces: Effect of Semiconductor Doping on Nanoparticle Reactivity

Journal of the American Chemical Society 134, 12528 (2012)

Self-assembled GaN nanowires on diamond

Nano Lett. 12, 2199 (2012)

Solid polyelectrolyte-gated surface conductive diamond field effect transistors

Applied Physics Letters 100, 023510 (2012)

M. Dankerl | M. Tosun | M. Stutzmann | J. A. Garrido

Thermodynamic Efficiency Limit of Molecular Donor-Acceptor Solar Cells and its Application to Diindenoperylene/C60-Based Planar Heterojunction Devices

Advanced Energy Materials 2, 1100 (2012)

Ultrahigh gain AlGaN/GaN high energy radiation detectors

Physica Status Solidi (a) Applications and Materials Science 209 8 1562-1567 (2012)

Article Featured on Front Cover

ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers

J. Appl. Phys. 111, 113504 (2012)

Chemical control of the charge state of nitrogen-vacancy centers in diamond

Phys. Rev. B 83, 081304(R) (2011)

Development and evaluation of gallium nitride-based thin films for x-ray dosimetry

Physics in Medicine and Biology 56 3215 (2011)

M. Hofstetter | J. Howgate | I. D. Sharp | M. Stutzmann | S. Thalhammer

Efficiency enhancement in hybrid P3HT/silicon nanocrystal solar cells

Green 1, 339 (2011)

Electrical Detection of Coherent Nuclear Spin Oscillations in Phosphorus-Doped Silicon using Pulsed ENDOR

Phys. Rev. Lett. 106, 187601 (2011)

F. Hoehne | L. Dreher | H. Huebl | M. Stutzmann | M. S. Brandt

Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination

Applied Physics Letters 98, 182106 (2011)

Electrically Detected Electron-Spin-Echo Envelope Modulation: A Highly Sensitive Technique for Resolving Complex Interface Structures

Phys. Rev. Lett. 106, 196101 (2011)

Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon

Phys. Rev. Lett. 106, 037601 (2011)

Electrolyte-gated organic field-effect transistors for sensing applications

Applied Physics Letters 98, 153302 (2011)

F. Buth | D. Kumar | M. Stutzmann | J. A. Garrido

Epitaxial upward transport of Al at the beginning of the Al-induced layer exchange process

physica status solidi (RRL) – Rapid Research Letters, 5: 172–174

B. Birajdar | T. Antesberger | M. Stutzmann | E. Spiecker

Exciton confinement in homo- and heteroepitaxial ZnO/Zn1-xMgxO quantum wells with x<0.1

J. Appl. Phys. 110, 093513 (2011)

Graphene Transistor Arrays for Recording Action Potentials from Electrogenic Cells

Advanced Materials 23, 5045 (2011)

High-resolution electrical detection of free induction decay and Hahn echoes in phosphorus-doped silicon

Phys. Rev. B 83 235201 (2011)

High-transconductance graphene solution-gated field effect transistors

Applied Physics Letters 99, 033503 (2011)

Hydrophobic Interaction and Charge Accumulation at the Diamond-Electrolyte Interface

Physical Review Letters 106, 196103 (2011)

Polymer brushes on graphene

Journal of the American Chemical Society 133, 10490 (2011)

Role of structural order and excess energy on ultrafast free charge generation in hybrid polythiophene/Si photovoltaics probed in real time by near-infrared broadband transient absorption

Journal of the American Chemical Society 133, 18220 (2011)

Solution-processed networks of silicon nanocrystals: The role of internanocrystal medium on semiconducting behavior

The Journal of Physical Chemistry C 115, 20120 (2011)

Strahlenbiophysik, Strahleneffekte, Dosimeter oder Biosensor?

Labor&More 4.11 p52-54 (2011)

Thermally induced alkylation of diamond

LANGMUIR 26, 18862 (2010).

Combined TPRx, in situ GISAXS and GIXAS studies of model semiconductor-supported platinum catalysts in the hydrogenation of ethene

Physical Chemistry Chemical Physics 12, 5585 (2010)

Controlling Surface Functionality through Generation of Thiol Groups in a Self-Assembled Monolayer

Langmuir, 26(20), 15895-900, 2010

Defect reduction in silicon nanoparticles by low-temperature vacuum annealing

Applied Physics Letters 96, 193112 (2010)

Electronic properties of ultrananocrystalline diamond surfaces

Applied Physics Letters 96, 092109 (2010)

Graphene Solution-Gated Field-Effect Transistor Array for Sensing Applications

Advanced Functional Materials 20, 3117–3124 (2010)

Isotope effect on electron paramagnetic resonance of boron acceptors in silicon

PHYSICAL REVIEW B 82, 115213 (2010)

Low-frequency noise in diamond solution-gated field effect transistors

Applied Physics Letters 97, 093504 (2010)

Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

physica status solidi (c), 7, 2233-2235 (2010)

Origin of energy dispersion in Al_xGa_(1-x)/GaN nanowire quantum discs with low Al content

Phys. Rev. B 82, 235308 (2010)

Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates

Advanced Materials 22, 2632 (2010)

Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond

Appl. Phys. Lett. 97, 111107 (2010).

Photoluminescence polarization properties of single GaN nanowires containing AlxGa1-xN/GaN quantum discs

Phys. Rev. B 81 045411 (2010)

Platinum nanoparticles deposited on wide-bandgap semiconductor surfaces for catalytic applications

physica status solidi C 7, No. 2, 411-414 (2010)

S. Schäfer | S. A. Wyrzgol | Y. Wang | J. A. Lercher | M. Stutzmann

Random pn-junctions for physical cryptography

Applied Physics Letters 96, 172103 (2010)

C. Jaeger | M. Algasinger | U. Rührmair | G. Csaba | M. Stutzmann

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

Applied Physics Letters 96, 092110 (2010)

Security Applications of Diodes with Random Current-Voltage Curves

Financial Cryptography and Data Security, LNCS 6052, 328 (2010)

Spin-Dependent Recombination between Phosphorus Donors in Silicon and Si/SiO2 Interface States Investigated with Pulsed Electrically Detected Electron Double Resonance

PHYSICAL REVIEW LETTERS 104, 046402 (2010)

Structured polymer brushes on silicon carbide

CHEMISTRY OF MATERIALS 22 272 (2010)

Thin Film Solar Cells on Low Thermal Budget Polycrystalline Silicon Seed Layers

accepted at Jpn. J. Appl. Phys. (2010)

Two-step crystallization during the reverse aluminum-induced layer exchange process

Journal Of Applied Physics 108, 113513 (2010)

C. Jaeger | M. Bator | S. Matich | M. Stutzmann

Applications of High-Capacity Crossbar Memories in Cryptography

Nanotechnology, IEEE Transactions on 99, 1 (2010)

Diamond transistor array for extracellular recording from electrogenic cells

Adv. Funct. Mater. 19, 2915–2923 (2009)

Dielectric screening versus quantum confinement of phosphorus donors in silicon nanocrystals investigated by magnetic resonance

PHYSICAL REVIEW B 79, 161304(R) (2009)

Doping efficiency in freestanding silicon nanocrystals from the gas phase: Phosphorus incorporation and defect-induced compensation

PHYSICAL REVIEW B 80, 165326 (2009)

Electrochemical impedance spectroscopy of oxidized and hydrogen-terminated nitrogen-induced conductive ultrananocrystalline diamond

Electrochimica Acta 54, 1909 (2009)

Electronic and optical properties of boron-doped nanocrystalline diamond films

Phys. Rev. B 79, 045206 (2009)

Electronic transport at the interface between diamond and aqueous electrolyte

DPG Fruehjahrstagung, Dresden, Germany

M. Dankerl | U. Stützel | A. Lippert | M. Stutzmann | J. A. Garrido

GaN quantum dots as optical transducers for chemical sensors

Applied Physics Letters 94, 113108 (2009)

Influence of hydrogen on nanocrystalline diamond surfaces investigated with HREELS and XPS

phys. stat. sol. A 206 2022–2027 (2009)

Light-induced charge transfer in hybrid composites of organic semiconductors and silicon nanocrystals

Applied Physics Letters 94, 113301 (2009)

Low-temperature transport in highly boron-doped nanocrystalline diamond

Phys. Rev. B 79 201203(R) (2009)

Manganese-hydrogen complexes in Ga1-xMnxN

PHYSICAL REVIEW B 80, 205205 (2009)

Metal-insulator transition and superconductivity in highly boron-doped nanocrystalline diamond films

phys. stat. sol. A 206 1978–1985 (2009)

Ordered Si nanoaperture arrays for the measurement of ion currents across lipid membranes

APPLIED PHYSICS LETTERS 95, 023112 (2009)

Photoresponse and morphology of pentacene thin films modified by oxidized and reduced diamond surfaces

Phys. Rev. B 80, 235311 (2009)

Silicon/organic semiconductor heterojunctions for solar cells

Physica Status Solidi A 206, 2775 (2009)

S. Niesar | R. Dietmueller | H. Nesswetter | H. Wiggers | M. Stutzmann

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

Nanotechnology 20 14574 (2009)

Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage

Sensors and Actuators B: Chemical 142 1 304-307 (2009)

A. Encabo | J. Howgate | M. Stutzmann | M. Eickhoff | M. A. Sánchez-García

Editorial

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 245 1-2 (2008)

Electronic properties of doped silicon nanocrystal films

JOURNAL OF APPLIED PHYSICS 104 053701 (2008)

Electronic properties of self-assembled alkyl monolayers on Ge surfaces

APPLIED PHYSICS LETTERS 92 223306 (2008)

I. D. Sharp | S. Schoell | M. Hoeb | M. S. Brandt | M. Stutzmann

Electronic transport in phosphorus-doped silicon nanocrystal networks

PHYSICAL REVIEW LETTERS 100 2 026803 (2008)

Enzyme-modified field effect transistors based on surface conductive single crystalline diamond

Langmuir 24 (1), 9898 – 9906 (2008)

A. Haertl | B. Baur | M. Stutzmann | J. A. Garrido

Functionalization of 6H-SiC surfaces with organosilanes

APPLIED PHYSICS LETTERS 92 15 153301 (2008)

Hydrogen passivation of ultra-thin low-temperature polycrystalline silicon films for electronic applications

JOURNAL OF NON-CRYSTALLINE SOLIDS 354 19-25 2314-2318 (2008)

C. Jaeger | T. Antesberger | M. Stutzmann

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Journal of Applied Physics 104 034309 (2008)

Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy

Journal of Applied Physics 104 074309 (2008)

Resolving the controversy on the pH sensitivity of diamond surfaces

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 2 31-33 (2008)

M. Dankerl | A. Reitinger | M. Stutzmann | J. A. Garrido

Spin echoes in the charge transport through phosphorus donors in silicon

PHYSICAL REVIEW LETTERS 100 17 177602 (2008)

The diamond/aqueous electrolyte interface: An impedance investigation

LANGMUIR 24 8 3897-3904 (2008)

J. A. Garrido | S. Nowy | A. Haertl | M. Stutzmann

The surface conductivity at the Diamond/Aqueous electrolyte interface

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 130 12 4177-4181 (2008)

Ultra-thin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange

JOURNAL OF NON-CRYSTALLINE SOLIDS 354 19-25 2324-2328 (2008)

T. Antesberger | C. Jaeger | M. Stutzmann

Untitled

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 205 1-2 (2008)

Black multi-crystalline silicon solar cells

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 2 R53-R55 (2007)

Covalently immobilized cytochrome c on self-assembled monolayers on ultrananocrystalline diamond electrodes

NSTI Nanotechnology Conference and Trade Show - Nanotech 2007, Santa Clara

Electronic transport through Si nanocrystal films: Spin-dependent conductivity studies

PHYSICA B-CONDENSED MATTER 401 527-530 (2007)

Fabrication of freestanding GaN microstructures using AlN sacrificial layers

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 1 R10-R12 (2007)

E. Zaus | M. Hermann | M. Stutzmann | M. Eickhoff

Immobilization of horseradish peroxidase via an amino silane on oxidized ultrananocrystalline diamond

DIAMOND AND RELATED MATERIALS 16 1 138-143 (2007)

It's time to celebrate!

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 204 1 9-10 (2007)

It's time to celebrate!

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 244 1 11-12 (2007)

Light-induced dielectrophoretic manipulation of DNA

BIOPHYSICAL JOURNAL 93 1032-1038 (2007)

M. Hoeb | J. O. Radler | S. Klein | M. Stutzmann | M. S. Brandt

Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

PHYSICA B-CONDENSED MATTER 401 541-545 (2007)

pss Rapid Research Letters - the fastest peer-reviewed publication medium in solid state physics

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 1 1-2 (2007)

Structural and electronic properties of ultrathin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange

APPLIED PHYSICS LETTERS 91 201909 (2007)

T. Antesberger | C. Jaeger | M. Scholz | M. Stutzmann

Structural, optical, and electronic properties of nanocrystalline and ultrananocrystalline diamond thin films

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 204 2874-2880 (2007)

Structured polymer grafts on diamond

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 129 15655-15661 (2007)

The fastest peer-reviewed publication medium in solid state physics

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 2 19-20 (2007)

The ion sensitivity of surface conductive single crystalline diamond

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 129 5 1287-1292 (2007)

Thermoelectric effect in laser annealed printed nanocrystalline silicon layers

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 1 262-264 (2007)

Black nonreflecting silicon surfaces for solar cells

APPLIED PHYSICS LETTERS 88 20 203107 (2006)

Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors

Applied Physics Letters 89 18 183901 (2006)

Chemical grafting of biphenyl self-assembled monolayers on ultrananocrystalline diamond

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 128 51 16884-16891 (2006)

Direct biofunctionalization of semiconductors: A survey

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 14 3424-3437 (2006)

M. Stutzmann | J. A. Garrido | M. Eickhoff | M. S. Brandt

Editorial

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 243 1 11-11 (2006)

Editorial

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 1 7-8 (2006)

Effect of nitrogen on the electronic properties of ultrananocrystalline diamond thin films grown on quartz and diamond substrates

PHYSICAL REVIEW B 74 15 155429 (2006)

Electrical detection of coherent P-31 spin quantum states

NATURE PHYSICS 2 12 835-838 (2006)

Electroreflectance spectroscopy of Pt/AlGaN/GaN heterostructures exposed to gaseous hydrogen

APPLIED PHYSICS LETTERS 88 2 024101 (2006)

Impact of silicon incorporation on the formation of structural defects in AlN

JOURNAL OF APPLIED PHYSICS 100 113531 (2006)

Indium nitride and indium rich related alloys: Challenges and opportunities

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 203 1 11-11 (2006)

M. Leszcynski | P. Ruterana | M. Stutzmann | C. Wood

Luminescence properties of highly Si-doped AlN

APPLIED PHYSICS LETTERS 88 7 071906 (2006)

Metal-induced seeding of macropore arrays in silicon

ADVANCED MATERIALS 18 5 633-+ (2006)

Nearly stress-free substrates for GaN homoepitaxy

JOURNAL OF CRYSTAL GROWTH 293 2 462-468 (2006)

Optical properties of nanocrystalline diamond thin films

APPLIED PHYSICS LETTERS 88 10 101908 (2006)

Phosphorus donors in highly strained silicon

PHYSICAL REVIEW LETTERS 97 16 166402 (2006)

Recording of cell action potentials with AlGaN/GaN field-effect transistors (vol 86, pg 033901, 2005)

APPLIED PHYSICS LETTERS 89 1 019901 (2006)

Synthetic nanocrystalline diamond as a third-generation biosensor support

LANGMUIR 22 13 5837-5842 (2006)

Chemical functionalization of GaN and AlN surfaces

APPLIED PHYSICS LETTERS 87 26 263901 (2005)

Deposition of microcrystalline silicon prepared by hot-wire chemical-vapor deposition: The influence of the deposition parameters on the material properties and solar cell performance

JOURNAL OF APPLIED PHYSICS 98 2 024905 (2005)

S. Klein | F. Finger | R. Carius | M. Stutzmann

Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy

APPLIED PHYSICS LETTERS 86 19 192108 (2005)

In honour of Professor Johannes Heydenreich - Preface

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 202 12 2247-2248 (2005)

W. Neumann | M. Stutzmann | S. Hildebrandt

Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

APPLIED PHYSICS LETTERS 86 8 083507 (2005)

O. Weidemann | E. Monroy | E. Hahn | M. Stutzmann | M. Eickhoff

Mn-rich clusters in GaN: Hexagonal or cubic symmetry?

APPLIED PHYSICS LETTERS 86 13 131927 (2005)

Optical and electrical properties of polycrystalline silicon-germanium thin films prepared by aluminum-induced layer exchange

APPLIED PHYSICS LETTERS 86 6 062115 (2005)

M. Gjukic | R. Lechner | M. Buschbeck | M. Stutzmann

Patterned surfaces for in vitro hydroxyapatite growth

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 7 1 469-472 (2005)

L. Pramatarova | E. Pecheva | R. Presker | M. Stutzmann | M. Hanzlik

pH sensors based on hydrogenated diamond surfaces

APPLIED PHYSICS LETTERS 86 7 073504 (2005)

Recording of cell action potentials with AlGaN/GaN field-effect transistors

APPLIED PHYSICS LETTERS 86 3 033901 (2005)

Temperature-dependent transport properties of hydrogen-induced diamond surface conductive channels

PHYSICAL REVIEW B 71 24 245310 (2005)

J. A. Garrido | T. Heimbeck | M. Stutzmann

Aluminum-induced crystallization of amorphous silicon-germanium thin films

APPLIED PHYSICS LETTERS 85 11 2134-2136 (2004)

M. Gjukic | M. Buschbeck | R. Lechner | M. Stutzmann

Direct observation of Mn clusters in GaN by X-ray scanning microscopy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 6A L695-L697 (2004)

G. Martinez-Criado | A. Somogyi | M. Hermann | M. Eickhoff | M. Stutzmann

Doping and its efficiency in a-SiOx : H

PHYSICAL REVIEW B 69 11 115206 (2004)

Doping-level-dependent optical properties of GaN : Mn

APPLIED PHYSICS LETTERS 84 22 4514-4516 (2004)

Electron injection-induced effects in Mn-doped GaN

JOURNAL OF APPLIED PHYSICS 96 6 3556-3558 (2004)

High quality heteroepitaxial AlN films on diamond

JOURNAL OF APPLIED PHYSICS 96 1 895-902 (2004)

Hydrogenated diamond surfaces studied by atomic and Kelvin force microscopy

DIAMOND AND RELATED MATERIALS 13 4-8 740-745 (2004)

B. Rezek | C. E. Nebel | M. Stutzmann

Influence of crystal defects on the piezoresistive properties of 3C-SiC

JOURNAL OF APPLIED PHYSICS 96 5 2878-2888 (2004)

M. Eickhoff | M. Stutzmann

Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

JOURNAL OF APPLIED PHYSICS 95 12 7908-7917 (2004)

Invited papers presented at the 8th Conference on Optics of Excitons in Confined Systems (OECS-8) - Lecce, Italy, 15-17 September 2003 - Editorial note

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 3 543-543 (2004)

M. Stutzmann | S. Hildebrandt

Invited papers presented at the 8th Conference on Optics of Excitons in Confined Systems (OECS-8) - Lecce, Italy, 15-17 September 2003 - Editorial note

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 3 615-615 (2004)

M. Stutzmann | S. Hildebrandt

Invited papers presented at the 8th Conference on Optics of Excitons in Confined Systems (OECS-8) - Lecce, Italy, 15-17 September 2003 - Editorial note

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 201 3 614-614 (2004)

M. Stutzmann | S. Hildebrandt

Jose Roberto Leite (1942-2004) - Obituary

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 241 12 2649-2650 (2004)

A. Fazzio | S. Canuto | K. Lischka | M. Stutzmann

Light-induced modification of a-SiOx : H. I: Metastability

JOURNAL OF APPLIED PHYSICS 95 8 4046-4059 (2004)

Light-induced modification of a-SiOx II: Laser crystallization

JOURNAL OF APPLIED PHYSICS 95 8 4060-4068 (2004)

Optical and structural characteristics of virtually unstrained bulk-like GaN

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 43 4A 1264-1268 (2004)

Paramagnetic defects of silicon nanowires

APPLIED PHYSICS LETTERS 85 6 943-945 (2004)

A. Baumer | M. Stutzmann | M. S. Brandt | F. C. K. Au | S. T. Lee

Passivation of Mn acceptors in GaMnAs

APPLIED PHYSICS LETTERS 84 13 2277-2279 (2004)

Photoreflectance studies of (A1)Ga- and N-face AlGaN/GaN heterostructures

THIN SOLID FILMS 450 1 155-158 (2004)

Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC

JOURNAL OF APPLIED PHYSICS 96 5 2872-2877 (2004)

M. Eickhoff | M. Moller | G. Kroetz | M. Stutzmann

Proceedings of the Twentieth International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology - Campos do Jordao, Sao Paolo, Brazil August 25-29, 2003 - Foreword

JOURNAL OF NON-CRYSTALLINE SOLIDS 338 VII-VII (2004)

I. Chambouleyron | F. Alvarez | M. Stutzmann | P. C. Taylor | F. C. Marques

Protein-modified nanocrystalline diamond thin films for biosensor applications

NATURE MATERIALS 3, 736-742 (2004)

Structural and interface properties of an AlN diamond ultraviolet light emitting diode

APPLIED PHYSICS LETTERS 85 17 3699-3701 (2004)

Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy

JOURNAL OF APPLIED PHYSICS 95 10 5305-5310 (2004)

M. Herrera | A. Cremades | J. Piqueras | M. Stutzmann | O. Ambacher

Thin polycrystalline SiGe films by aluminium-induced layer exchange

Physica Status Solidi (c) 1, 1131 (2004).

R. Lechner | M. Buschbeck | M. Gjukic | M. Stutzmann

Two-dimensional electron gas recombination in undoped AlGaN/GaN heterostructures

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 43 6A 3360-3366 (2004)

G. Martinez-Criado | C. Miskys | U. Karrer | O. Ambacher | M. Stutzmann

AlN/diamond heterojunction diodes

APPLIED PHYSICS LETTERS 82 2 290-292 (2003)

AlN/Diamond np-junctions

DIAMOND AND RELATED MATERIALS 12 10-11 1873-1876 (2003)

AlxGa1-xN - A new material system for biosensors

ADVANCED FUNCTIONAL MATERIALS 13 11 841-846 (2003)

G. Steinhoff | O. Purrucker | M. Tanaka | M. Stutzmann | M. Eickhoff

Charge transfer at the Mn acceptor level in GaN

JOURNAL OF SUPERCONDUCTIVITY 16 1 83-86 (2003)

DX behaviour of Si donors in AlGaN alloys

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 235 1 13-19 (2003)

M. S. Brandt | R. Zeisel | S. T. B. Gonnenwein | M. W. Bayerl | M. Stutzmann

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

phys. stat. sol. (c) 0, 1908-1918 (2003) (review article)

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures - Part A: Polarization

phys. stat. sol. (c) 0, 1878-1907 (2003) (review article)

Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

APPLIED PHYSICS LETTERS 82 6 988-990 (2003)

Fermi level on hydrogen terminated diamond surfaces

APPLIED PHYSICS LETTERS 82 14 2266-2268 (2003)

Ferromagnetic resonance in Ga1-xMnxAs

JOURNAL OF SUPERCONDUCTIVITY 16 1 75-78 (2003)

Free-standing GaN grown on epitaxial lateral overgrown GaN substrates

JOURNAL OF CRYSTAL GROWTH 255 3-4 277-281 (2003)

Growth and characterization of GaN : Mn epitaxial films

JOURNAL OF APPLIED PHYSICS 93 12 9697-9702 (2003)

Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative X-ray photoelectron spectroscopy study

J. Appl. Phys. 94, 2289-2294 (2003)

A. Lehner | G. Steinhoff | M. S. Brandt | M. Eickhoff | M. Stutzmann

Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study

JOURNAL OF APPLIED PHYSICS 94 4 2289-2294 (2003)

A. Lehner | G. Steinhoff | M. S. Brandt | M. Eickhoff | M. Stutzmann

Hyperfine interactions at dangling bonds in amorphous germanium

PHYSICAL REVIEW B 68 20 205208 (2003)

Influence of surface oxides on hydrogen-sensitive Pd : GaN Schottky diodes

APPLIED PHYSICS LETTERS 83 4 773-775 (2003)

Intrinsic microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cells

THIN SOLID FILMS 430 1-2 202-207 (2003)

Kinetics of the topotactic formation of siloxene

CHEMISTRY OF MATERIALS 15 4 910-915 (2003)

G. Vogg | M. S. Brandt | M. Stutzmann

Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

THIN SOLID FILMS 427 1-2 176-180 (2003)

Novel in-plane gate devices on hydrogenated diamond surfaces

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 199 1 56-63 (2003)

pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

APPLIED PHYSICS LETTERS 83 1 177-179 (2003)

Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces

APPLIED PHYSICS LETTERS 82 4 565-567 (2003)

Photoluminescence of Er3+-implanted amorphous hydrogenated silicon suboxides

PHYSICAL REVIEW B 68 16 165207 (2003)

A. Janotta | M. Schmidt | R. Janssen | M. Stutzmann | C. Buchal

Photoreflectance studies of N- and Ga-face AlGaN/GaN heterostructures confining a polarisation induced 2DEG

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 240 2 380-383 (2003)

Scientific misconduct: Past, present, and future...

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 235 1 11-11 (2003)

M. Stutzmann | S. Hildebrandt

Scribing into hydrogenated diamond surfaces using atomic force microscopy

APPLIED PHYSICS LETTERS 82 19 3336-3338 (2003)

Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films

PHYSICAL REVIEW B 67 16 165215 (2003)

Spin wave resonance in Ga1-xMnxAs

APPLIED PHYSICS LETTERS 82 5 730-732 (2003)

Study of inversion domain pyramids formed during the GaN : Mg growth

SOLID-STATE ELECTRONICS 47 3 565-568 (2003)

Surface functionalization of amorphous silicon and silicon suboxides for biological applications

THIN SOLID FILMS 427 1-2 201-207 (2003)

A new acceptor state in CVD-diamond

DIAMOND AND RELATED MATERIALS 11 3-6 347-350 (2002)

Capacitance-voltage studies of Al-Schottky contacts on hydrogen-terminated diamond

APPLIED PHYSICS LETTERS 81 4 637-639 (2002)

J. A. Garrido | C. E. Nebel | M. Stutzmann | E. Snidero | P. Bergonzo

Characterization of sub-micron in-plane devices in H-terminated diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 517-522 (2002)

Dependence of the doping efficiency on material composition in n-type a-SiOx : H

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 579-584 (2002)

Electrical and optical measurements of CVD diamond doped with sulfur

PHYSICAL REVIEW B 65 16 165409 (2002)

Electron spin resonance of phosphorus in n-type diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 434-441 (2002)

T. Graf | M. S. Brandt | C. E. Nebel | M. Stutzmann | S. Koizumi

Epitaxial growth of phosphorus doped diamond on {111} substrate

DIAMOND AND RELATED MATERIALS 11 3-6 328-331 (2002)

Er3+ luminescence in a-SiOx : H

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 688-693 (2002)

A. Janotta | M. Schmidt | R. Janssen | C. Buchal | M. Stutzmann

Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

SEMICONDUCTORS 36 11 1240-1243 (2002)

Five years of Rapid Research Notes in physica status solidi: The fastest refereed forum of publication

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 231 1 1-2 (2002)

Five years of Rapid Research Notes in physica status solidi: The fastest refereed forum of publication

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 191 1 R1-R2 (2002)

GaN-based heterostructures for sensor applications

DIAMOND AND RELATED MATERIALS 11 3-6 886-891 (2002)

Gas sensitive GaN/AlGaN-heterostructures

SENSORS AND ACTUATORS B-CHEMICAL 87 3 425-430 (2002)

J. Schalwig | G. Muller | M. Eickhoff | O. Ambacher | M. Stutzmann

Group III-nitride-based gas sensors for combustion monitoring

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 93 1-3 207-214 (2002)

J. Schalwig | G. Muller | M. Eickhoff | O. Ambacher | M. Stutzmann

Hydrogen response mechanism of Pt-GaN Schottky diodes

APPLIED PHYSICS LETTERS 80 7 1222-1224 (2002)

Laser beam induced currents in polycrystalline silicon thin films prepared by interference laser crystallization

JOURNAL OF APPLIED PHYSICS 91 7 4220-4228 (2002)

B. Rezek | C. E. Nebel | M. Stutzmann

Local oxidation of hydrogenated diamond surfaces for device fabrication

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 523-528 (2002)

Low temperature properties of the p-type surface conductivity of diamond

DIAMOND AND RELATED MATERIALS 11 3-6 351-354 (2002)

Microcrystalline silicon prepared by hot-wire chemical vapour deposition for thin film solar cell applications

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41 1AB L10-L12 (2002)

n-type doping of diamond by sulfur and phosphorus

DIAMOND AND RELATED MATERIALS 11 3-6 289-295 (2002)

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN

Mat. Sci.& Eng. B93, 143-146 (2002)

R. Neuberger | G. Müller | M. Eickhoff | O. Ambacher | M. Stutzmann

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 93 1-3 143-146 (2002)

R. Neuberger | G. Muller | M. Eickhoff | O. Ambacher | M. Stutzmann

Papers presented at the 275. WE-Heraeus-Seminar: Hardware Concepts for Quantum Computing - Bad Honnef, Germany, May 13-15, 2002 - Preface

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 233 3 375-375 (2002)

M. S. Brandt | M. Fanciulli | M. Stutzmann

Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 234 3 713-716 (2002)

Properties of grain boundaries in laser-crystallized silicon thin films

JOURNAL OF NON-CRYSTALLINE SOLIDS 299 726-730 (2002)

C. Eisele | T. Bach | C. E. Nebel | M. Stutzmann

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

J. Phys.: Condens. Matter 14, 3399 (2002)

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Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

JOURNAL OF PHYSICS-CONDENSED MATTER 14 13 3399-3434 (2002)

Role of defect centers in recombination processes in GaN monocrystals

APPLIED PHYSICS LETTERS 80 16 2824-2826 (2002)

The Mn3+/2+ acceptor level in group III nitrides

APPLIED PHYSICS LETTERS 81 27 5159-5161 (2002)

T. Graf | M. Gjukic | M. S. Brandt | M. Stutzman | O. Ambacher

Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation

phys. stat. sol. (b) 234, 805 (2002)

Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 234 3 805-809 (2002)

Two-dimensional electron gas effects on the photoluminescence from a nonintentionally doped AlGaN/GaN heterojunctions

phys. stat. sol. (c) 0, 392-396 (2002)

Defect-related noise in AlN and AlGaN alloys

PHYSICA B-CONDENSED MATTER 308 69-72 (2001)

Efficient tunable luminescence of SiGe alloy sheet polymers

APPLIED PHYSICS LETTERS 78 25 3956-3958 (2001)

G. Vogg | A. J. P. Meyer | C. Miesner | M. S. Brandt | M. Stutzmann

Elastic properties of the layered zintl-phase CaSi2

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 2 213-219 (2001)

G. Vogg | M. S. Brandt | M. Stutzmann

Electrically detected magnetic resonance studies of phosphorus doped diamond

PHYSICA B-CONDENSED MATTER 308 593-597 (2001)

T. Graf | M. S. Brandt | C. E. Nebel | M. Stutzmann | S. Koizumi

Electron affinity of AlxGa1-xN(0001) surfaces

APPLIED PHYSICS LETTERS 78 17 2503-2505 (2001)

Epitaxial alloy films of zintl-phase Ca(Si1-xGex)(2)

JOURNAL OF CRYSTAL GROWTH 223 4 573-576 (2001)

G. Vogg | C. Miesner | M. S. Brandt | M. Stutzmann | G. Abstreiter

Excitonic transitions in homoepitaxial GaN

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 497-500 (2001)

g values of effective mass donors in AlxGa1-xN alloys

PHYSICAL REVIEW B 63 16 165204|ISSN 0163-1829 (2001)

Generation-recombination noise of DX centers in AlN : Si

APPLIED PHYSICS LETTERS 79 15 2396-2398 (2001)

Group-III-nitride based gas sensing devices

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 1 39-45 (2001)

J. Schalwig | G. Muller | O. Ambacher | M. Stutzmann

High-electron-mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 1 85-89 (2001)

R. Neuberger | G. Muller | O. Ambacher | M. Stutzmann

Hydrogen-induced transport properties of holes in diamond surface layers

APPLIED PHYSICS LETTERS 79 27 4541-4543 (2001)

Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films

JOURNAL OF APPLIED PHYSICS 90 9 4868-4870 (2001)

Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications

THIN SOLID FILMS 395 1-2 305-309 (2001)

S. Klein | F. Finger | R. Carius | H. Wagner | M. Stutzmann

Ion-induced modulation of channel currents in AlGaN/GaN high-electron-mobility transistors

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 183 2 R10-R12 (2001)

R. Neuberger | G. Muller | O. Ambacher | M. Stutzmann

Laser crystallisation of silicon-germanium alloys

POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE 80-81 205-210 (2001)

C. Eisele | C. E. Nebel | M. Stutzmann

Long living excited states in boron doped diamond

JOURNAL OF APPLIED PHYSICS 89 4 2237-2240 (2001)

C. E. Nebel | E. Rohrer | M. Stutzmann

Low temperature surface conductivity of hydrogenated diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 186 2 241-247 (2001)

Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN

PHYSICAL REVIEW B 63 12 art. no.-125203 (2001)

Papers presented at the 247. WE-Heraeus Seminar on New Materials for Multifunctional Sensor Applications Tutzing (Germany), December 13-15, 2000 - Preface

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 185 1 V-V (2001)

O. Ambacher | M. S. Brandt | C. E. Nebel | M. Stutzmann

Periodic light coupler gratings in amorphous thin film solar cells

JOURNAL OF APPLIED PHYSICS 89 12 7722-7726 (2001)

C. Eisele | C. E. Nebel | M. Stutzmann

Photoluminescence of Ga-face AlGaN/GaN single heterostructures

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 82 1-3 200-202 (2001)

Photoluminescence study of excitons in homoepitaxial GaN

JOURNAL OF APPLIED PHYSICS 90 11 5627-5631 (2001)

physica status solidi: Serving the solid state physics community since 40 years

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 186 1 V-VI (2001)

Physica status solidi: Serving the solid state physics community since 40 years

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 226 1 V-VI (2001)

Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures

JOURNAL OF APPLIED PHYSICS 90 7 3383-3386 (2001)

M. Eickhoff | O. Ambacher | G. Krotz | M. Stutzmann

Playing with polarity

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 505-512 (2001)

Polygermanosilyne calcium hydroxide intercalation compounds formed by topotactic transformation of Ca(Si1-xGex)(2) alloy zintl phases in ambient atmosphere

MONATSHEFTE FUR CHEMIE 132 10 1125-1135 (2001)

G. Vogg | L. J. P. Meyer | C. Miesner | M. S. Brandt | M. Stutzmann

Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures

JOURNAL OF APPLIED PHYSICS 90 9 4735-4740 (2001)

Space charge spectroscopy of diamond

DIAMOND AND RELATED MATERIALS 10 3-7 639-644 (2001)

C. E. Nebel | R. Zeisel | M. Stutzmann

Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures

APPLIED PHYSICS LETTERS 79 7 952-954 (2001)

Spin-dependent electronic noise

PHYSICA E 10 1-3 67-70 (2001)

M. S. Brandt | S. T. B. Goennenwein | M. Stutzmann

Study of structural defects limiting the luminescence of InGaN single quantum wells

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 80 1-3 313-317 (2001)

A. Cremades | J. Piqueras | M. Albrecht | M. Stutzmann | H. P. Strunk

Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 603-606 (2001)

Wetting behaviour of GaN surfaces with Ga- or N-face polarity

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 228 2 519-522 (2001)

Aims and purpose of the 216. WE-Heraeus Seminar

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 177 1 3-3 (2000)

J. A. Schaefer | R. Schlogl | M. Stutzmann

AlGaN-based ultraviolet light detectors with integrated optical filters

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 18 2 757-760 (2000)

U. Karrer | A. Dobner | O. Ambacher | M. Stutzmann

Capacitance-voltage profiling of deuterium passivation and diffusion in diamond Schottky diodes

DIAMOND AND RELATED MATERIALS 9 3-6 413-416 (2000)

R. Zeisel | C. E. Nebel | M. Stutzmann

Characterization of InGaN thin films using high-resolution x-ray diffraction

Appl. Phys. Lett. 76, 577-579 (2000)

Computer simulation of materials at atomic level

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 217 1 3-3 (2000)

Defects in planar Si pn junctions studied with electrically detected magnetic resonance

APPLIED PHYSICS LETTERS 76 16 2280-2282 (2000)

DX-behavior of Si in AlN

PHYSICAL REVIEW B 61 R16283-R16286 (2000)

Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1-xN films

JOURNAL OF APPLIED PHYSICS 87 5 2357-2362 (2000)

Epitaxial CaGe2 films on germanium

JOURNAL OF CRYSTAL GROWTH 212 1-2 148-154 (2000)

Fermi level pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 5 art. no.-W11.82 (2000)

Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures

SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000 353-3 787-790 (2000)

GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

APPLIED PHYSICS LETTERS 77 12 1858-1860 (2000)

C. R. Miskys | M. K. Kelly | O. Ambacher | G. Martinez-Criado | M. Stutzmann

Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH 220 4 341-344 (2000)

Influence of crystal polarity on the properties of Pt/GaN Schottky diodes

APPLIED PHYSICS LETTERS 77 13 2012-2014 (2000)

U. Karrer | O. Ambacher | M. Stutzmann

Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors

SOLID-STATE ELECTRONICS 44 8 1361-1365 (2000)

Interference laser crystallization of microcrystalline silicon using asymmetric beam intensities

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 650-653 (2000)

B. Rezek | C. E. Nebel | M. Stutzmann

Local photoconductivity correlation with granular structure of microcrystalline silicon thin films

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 315-318 (2000)

B. Rezek | C. E. Nebel | M. Stutzmann

Magnetic resonance investigations of defects in (GaN)-N-14 and (GaN)-N-15

JOURNAL OF APPLIED PHYSICS 88 6 3249-3253 (2000)

Microscopic identification of the origin of generation-recombination noise in hydrogenated amorphous silicon with noise-detected magnetic resonance

PHYSICAL REVIEW LETTERS 84 22 5188-5191 (2000)

S. T. B. Goennenwein | M. W. Bayerl | M. S. Brandt | M. Stutzmann

Noise-detected magnetic resonance experiments in amorphous hydrogenated silicon

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 237-241 (2000)

S. T. B. Goennenwein | M. W. Bayerl | M. S. Brandt | M. Stutzmann

Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition

JOURNAL OF APPLIED PHYSICS 88 6 3470-3478 (2000)

Persistent photocurrents in CVD diamond

DIAMOND AND RELATED MATERIALS 9 3-6 404-407 (2000)

C. E. Nebel | A. Waltenspiel | M. Stutzmann | M. Paul | L. Schafer

Photoconductivity study of Li doped homoepitaxially grown CVD diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 181 1 45-50 (2000)

Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy

Appl. Phys. Lett. 77, 546-548 (2000)

Polygermyne - A prototype system for layered germanium polymers

ADVANCED MATERIALS 12 17 1278-+ (2000)

G. Vogg | M. S. Brandt | M. Stutzmann

Spatially resolved photocurrent measurements of microstructured a-Si : H solar cells

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 1109-1113 (2000)

C. Eisele | C. E. Nebel | M. Stutzmann

Spin-dependent capacitance of silicon field-effect transistors

APPLIED PHYSICS LETTERS 76 11 1467-1469 (2000)

M. S. Brandt | R. T. Neuberger | M. Stutzmann

Spin-dependent processes in amorphous and microcrystalline silicon: a survey

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 1-22 (2000)

M. Stutzmann | M. S. Brandt | M. W. Bayerl

Structural and optical properties of Si-doped GaN

PHYSICAL REVIEW B 61 4 2812-2818 (2000)

A. Cremades | L. Gorgens | O. Ambacher | M. Stutzmann | F. Scholz

Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy

JOURNAL OF CRYSTAL GROWTH 208 1-4 37-41 (2000)

Thermal stability of p-type doped amorphous silicon suboxides

JOURNAL OF NON-CRYSTALLINE SOLIDS 266 840-844 (2000)

R. Janssen | A. Janotta | M. Stutzmann

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

JOURNAL OF APPLIED PHYSICS 87 1 334-344 (2000)

Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire

JOURNAL OF APPLIED PHYSICS 87 7 3375-3380 (2000)

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped AlGaN/GaN HETS

COMPOUND SEMICONDUCTORS 1999 166 493-497 (2000)

Analysis of composition fluctuations in AlxGa1-xN

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 59 1-3 182-185 (1999)

Capacitively detected magnetic resonance of defects in MOSFETs

PHYSICA B 274 1027-1030 (1999)

M. S. Brandt | R. Neuberger | M. Stutzmann

Capacitively-detected magnetic resonance in hydrogenated amorphous silicon solar cells

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10B L1172-L1174 (1999)

M. S. Brandt | R. T. Neuberger | M. W. Bayerl | M. Stutzmann

Carrier recombination at screw dislocations in n-type AlGaN layers

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 409-414 (1999)

Characterization of AlGaN-Schottky diodes grown by plasma induced molecular beam epitaxy

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 1 163-167 (1999)

U. Karrer | A. Dobner | O. Ambacher | M. Stutzmann

Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy

JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 S279-S282 (1999)

Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 38 9A 4962-4968 (1999)

Composition analysis using elastic recoil detection

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 679-682 (1999)

Compositional fluctuations in GaInN GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy

APPLIED PHYSICS LETTERS 74 26 3981-3983 (1999)

N. Wieser | O. Ambacher | H. P. Felsl | L. Gorgens | M. Stutzmann

Correlation of photoconductivity and structure of microcrystalline silicon thin films with submicron resolution

APPLIED PHYSICS LETTERS 75 12 1742-1744 (1999)

B. Rezek | C. E. Nebel | M. Stutzmann

CV and DLTS experiments in boron-doped diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 174 1 117-127 (1999)

C. E. Nebel | R. Zeisel | M. Stutzmann

Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range

PHYSICAL REVIEW B 59 3 1845-1849 (1999)

Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 807-811 (1999)

Editorial

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 2 U3-U3 (1999)

Electrically detected magnetic resonance of two-dimensional electron gases in Si SiGe heterostructures

PHYSICAL REVIEW B 59 20 13242-13250 (1999)

Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe

Phys. Rev. B 59, 13242-13250 (1999)

Excitonic transitions in cubic AlGaN

MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS 164 419-424 (1999)

From CaSi2 to siloxene: epitaxial silicide and sheet polymer films on silicon

JOURNAL OF CRYSTAL GROWTH 203 4 570-581 (1999)

G. Vogg | M. S. Brandt | M. Stutzmann | M. Albrecht

High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy

APPLIED PHYSICS LETTERS 75 23 3653-3655 (1999)

Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 3A L217-L219 (1999)

MOCVD-epitaxy on free-standing HVPE-GaN substrates

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 176 1 443-446 (1999)

C. R. Miskys | M. K. Kelly | O. Ambacher | M. Stutzmann

Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 4 art. no.-G8.4 (1999)

ODMR of bound excitons in Mg-doped GaN

PHYSICA B 274 120-123 (1999)

Optical and electrical properties of doped amorphous silicon suboxides

PHYSICAL REVIEW B 60 19 13561-13572 (1999)

R. Janssen | A. Janotta | D. Dimova-Malinovska | M. Stutzmann

Passivation of boron in diamond by deuterium

APPLIED PHYSICS LETTERS 74 13 1875-1876 (1999)

R. Zeisel | C. E. Nebel | M. Stutzmann

Photocapacitance study of boron-doped chemical-vapor-deposited diamond

PHYSICAL REVIEW B 60 4 2476-2479 (1999)

R. Zeisel | C. E. Nebel | M. Stutzmann | E. Gheeraert | A. Deneuville

Polycrystalline silicon thin films produced by interference laser crystallization of amorphous silicon

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 10A L1083-L1084 (1999)

B. Rezek | C. E. Nebel | M. Stutzmann

Preparation and characterization of epitaxial CaSi2 and siloxene layers on silicon

MONATSHEFTE FUR CHEMIE 130 1 79-87 (1999)

G. Vogg | N. Zamanzadeh-Hanebuth | M. S. Brandt | M. Stutzmann | M. Albrecht

Reflectance difference spectroscopy characterization of AlxGa1-xN-compound layers

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 215-220 (1999)

Role of spontaneous and piezoelectric polarization induced effects in group-III nitride based heterostructures and devices

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 381-389 (1999)

The origin of red luminescence from Mg-doped GaN

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 547-550 (1999)

Transmission spectra of InGaN single quantum wells and InGaN GaN heterostructures grown by metalorganic chemical vapor deposition

JOURNAL OF THE KOREAN PHYSICAL SOCIETY 35 1 42-45 (1999)

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

JOURNAL OF APPLIED PHYSICS 85 6 3222-3233 (1999)

Untitled

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 171 2 U3-U3 (1999)

Vibrational anti-crossing in siloxene

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 215 1 409-412 (1999)

M. S. Brandt | L. Hoppel | N. Zamanzadeh-Hanebuth | G. Vogg | M. Stutzmann

a-SiOx : H thin film light emitting devices for Si-based optoelectronics

JOURNAL OF LUMINESCENCE 80 1-4 405-409 (1998)

Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 37 3A 745-752 (1998)

Amorphous silicon suboxide light-emitting diodes

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 1151-1155 (1998)

R. Janssen | U. Karrer | D. Dimova-Malinovska | M. Stutzmann

Analysis of composition fluctuations on an atomic scale in Al0.25Ga0.75N by high-resolution transmission electron microscopy

APPLIED PHYSICS LETTERS 73 7 930-932 (1998)

B. Neubauer | A. Rosenauer | D. Gerthsen | O. Ambacher | M. Stutzmann

Carrier confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 168 2 R7-R8 (1998)

Carrier trapping and release in CVD-diamond rims

DIAMOND AND RELATED MATERIALS 7 2-5 556-559 (1998)

C. E. Nebel | M. Stutzmann | F. Lacher | P. Koidl | R. Zachai

Characterization of laser patterned a-Si : H thin films by combined AFM local current measurements

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 170 1 R1-R2 (1998)

Conductive microcrystalline-Si films produced by laser processing

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 916-920 (1998)

B. Dahlheimer | U. Karrer | C. E. Nebel | M. Stutzmann

Deep level transient spectroscopy of synthetic type IIb diamond

JOURNAL OF APPLIED PHYSICS 84 11 6105-6108 (1998)

R. Zeisel | C. E. Nebel | M. Stutzmann

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS 77 4 1013-1025 (1998)

Electrical and structural properties of AlGaN: a comparison with CVD diamond

DIAMOND AND RELATED MATERIALS 7 2-5 123-128 (1998)

M. Stutzmann | O. Ambacher | H. Angerer | C. E. Nebel | E. Rohrer

Electrically detected magnetic resonance of a-Si : H at low magnetic fields: the influence of hydrogen on the dangling bond resonance

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 343-347 (1998)

M. S. Brandt | M. W. Bayerl | M. Stutzmann | C. F. O. Graeff

Electroluminescent properties of a-SiOx : H alloys

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 1160-1163 (1998)

High-resolution thermal processing of semiconductors using pulsed-laser interference patterning

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 651-657 (1998)

M. K. Kelly | J. Rogg | C. E. Nebel | M. Stutzmann | S. Katai

Laser-interference crystallization of amorphous silicon: Applications and properties

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 667-674 (1998)

Minority carrier diffusion length in AlGaN: A combined electron beam induced current and transmission microscopy study

SOLID STATE PHENOMENA 63-4 139-146 (1998)

Negative electron affinity of cesiated p-GaN(0001) surfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 16 4 2224-2228 (1998)

Nitrogen effusion and self-diffusion in (GaN)-N-14/(GaN)-N-15 isotope heterostructures

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 37 5A 2416-2421 (1998)

O. Ambacher | F. Freudenberg | R. Dimitrov | H. Angerer | M. Stutzmann

Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond

DIAMOND AND RELATED MATERIALS 7 6 879-883 (1998)

Proceedings of the Seventeenth International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology, Budapest, Hungary August 25-29, 1997

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 VII-VII (1998)

S. Kugler | M. Stutzmann

Quantitative transmission electron microscopy investigation of the relaxation by misfit dislocations confined at the interface of GaN/Al2O3(0001)

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 37 1 84-89 (1998)

Realization and characterization of Si nanostructures

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 166 2 687-693 (1998)

G. Groos | M. Stutzmann

Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance

PHYSICAL REVIEW B 58 8 4892-4902 (1998)

Si-nanostructures made by laser-annealing

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 938-942 (1998)

G. Groos | M. Stutzmann

Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements

APPLIED PHYSICS LETTERS 72 19 2400-2402 (1998)

Spin splitting in GaAs quantum wire structures

PHYSICA E 2 1-4 929-932 (1998)

Spin-dependent processes and Mg-acceptors in GaN single quantum well diodes and p-type GaN films

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 210 2 389-393 (1998)

M. W. Bayerl | M. S. Brandt | H. Angerer | O. Ambacher | M. Stutzmann

The influence of the Al-content on the optical gain in AlGaN heterostructures

JOURNAL OF CRYSTAL GROWTH 189 692-695 (1998)

J. Holst | L. Eckey | A. Hoffmann | O. Ambacher | M. Stutzmann

Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire

PHYSICAL REVIEW B 57 12 7066-7070 (1998)

Vibrational properties of siloxene: isotope substitution studies

JOURNAL OF NON-CRYSTALLINE SOLIDS 230 503-506 (1998)

N. Zamanzadeh-Hanebuth | M. S. Brandt | M. Stutzmann

AlGaN-based Bragg reflectors

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2 22 art. no.-22 (1997)

Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy

JOURNAL OF APPLIED PHYSICS 81 1 234-237 (1997)

C. F. O. Graeff | C. E. Nebel | M. Stutzmann | A. Floter | R. Zachai

Coherent X-ray scattering phenomenon in highly disordered epitaxial AlN films

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 162 2 529-535 (1997)

Comment on 'Resonantly excited photoluminescence spectra of porous silicon' - Reply

PHYSICAL REVIEW B 55 15 10117-10118 (1997)

M. Rosenbauer | M. Stutzmann | S. Finkbeiner | J. Weber | E. Bustarret

Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films

APPLIED PHYSICS LETTERS 71 11 1504-1506 (1997)

Editorial note

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 199 1 3-3 (1997)

Electrically detected magnetic resonance (EDMR) of defects in GaN light emitting diodes

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 159 2 R5-R6 (1997)

M. W. Bayerl | M. S. Brandt | M. Stutzmann

Electrically detected magnetic resonance at different microwave frequencies

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 963-968 (1997)

M. S. Brandt | M. W. Bayerl | N. M. Reinacher | T. Wimbauer | M. Stutzmann

Electronic properties of CVD and synthetic diamond

PHYSICAL REVIEW B 55 15 9786-9791 (1997)

C. E. Nebel | J. Munz | M. Stutzmann | R. Zachai | H. Guttler

Electronic transport in crystalline siloxene

SOLID STATE COMMUNICATIONS 102 5 365-368 (1997)

M. S. Brandt | T. Puchert | M. Stutzmann

Gallium interstitials in GaAs/AlGaAs heterostructures investigated by optically and electrically detected magnetic resonance

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 258-2 1309-1314 (1997)

Growth of GaN/AlN and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium

JOURNAL OF CRYSTAL GROWTH 170 1-4 335-339 (1997)

Influence of magnesium doping on the structural properties of GaN layers

JOURNAL OF CRYSTAL GROWTH 181 3 197-203 (1997)

Optical constants of epitaxial AlGaN films and their temperature dependence

JOURNAL OF APPLIED PHYSICS 82 10 5090-5096 (1997)

Properties and applications of MBE grown AlGaN

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 50 1-3 212-218 (1997)

Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2 42-45 art. no.-43 (1997)

A. Cros | H. Angerer | R. Handschuh | O. Ambacher | M. Stutzmann

Raman spectra of isotopic GaN

PHYSICAL REVIEW B 56 22 14399-14406 (1997)

Raman study of the optical phonons in AlxGa1-xN alloys

SOLID STATE COMMUNICATIONS 104 1 35-39 (1997)

Realization of AlGaAs antidot arrays by pulsed laser interference gratings

JOURNAL OF APPLIED PHYSICS 82 3 1497-1499 (1997)

Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin-film transistors

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 36 1A 121-125 (1997)

G. Kawachi | C. F. O. Graeff | M. S. Brandt | M. Stutzmann

Sub-bandgap spectroscopy of chemical vapor deposition diamond

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 46 1-3 115-118 (1997)

Transport properties and electroluminescence of siloxene

JOURNAL OF APPLIED PHYSICS 82 9 4520-4524 (1997)

M. Rosenbauer | M. Stutzmann

Carrier transport in amorphous silicon-based thin-film transistors studied by spin-dependent transport

PHYSICAL REVIEW B 54 11 7957-7964 (1996)

G. Kawachi | C. F. O. Graeff | M. S. Brandt | M. Stutzmann

Electrically detected magnetic resonance in a-Si:H/a-Ge:H multilayers

JOURNAL OF APPLIED PHYSICS 79 12 9166-9171 (1996)

C. F. O. Graeff | M. Stutzmann | S. Miyazaki

Electrically detected magnetic resonance investigations of gallium phosphide green light-emitting diodes

JOURNAL OF APPLIED PHYSICS 80 8 4541-4547 (1996)

N. M. Reinacher | M. S. Brandt | M. Stutzmann

Growth of GaN/AlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium

JOURNAL OF CRYSTAL GROWTH 167 1-2 1-7 (1996)

Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films

APPLIED PHYSICS LETTERS 68 7 970-972 (1996)

Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

APPLIED PHYSICS LETTERS 68 14 1984-1986 (1996)

M. K. Kelly | C. E. Nebel | M. Stutzmann | G. Bohm

Nitrogen-related dopant and defect states in CVD diamond

PHYSICAL REVIEW B 54 11 7874-7880 (1996)

Optical and electrical properties of amorphous silicon-oxide with visible room temperature photoluminescence

APPLIED SURFACE SCIENCE 102 323-326 (1996)

M. C. Rossi | M. S. Brandt | M. Stutzmann

Optical excitation of paramagnetic nitrogen in chemical vapor deposited diamond

APPLIED PHYSICS LETTERS 69 21 3215-3217 (1996)

Optical patterning of GaN films

APPLIED PHYSICS LETTERS 69 12 1749-1751 (1996)

PEMBE-growth of gallium nitride on (0001)sapphire: A comparison to MOCVD grown GaN

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 1 1-46 U112-U116 (1996)

Properties of hydrogenated amorphous silicon suboxide alloys with visible room-temperature photoluminescence

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 73 5 799-816 (1996)

M. Zacharias | D. DimovaMalinovska | M. Stutzmann

Spin-dependent transport in amorphous silicon thin-film transistors

JOURNAL OF NON-CRYSTALLINE SOLIDS 200 1117-1120 (1996)

C. F. O. Graeff | G. Kawachi | M. S. Brandt | M. Stutzmann | M. J. Powell

Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy

SOLID STATE COMMUNICATIONS 97 5 365-370 (1996)

Sub-micron silicon structures for thin film solar cells

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 194 1 55-67 (1996)

C. E. Nebel | B. Dahlheimer | S. Schoniger | M. Stutzmann

The sign of the Hall effect in hydrogenated amorphous and disordered crystalline silicon

PHILOSOPHICAL MAGAZINE LETTERS 74 6 455-463 (1996)

C. E. Nebel | M. Rother | M. Stutzmann | C. Summonte | M. Heintze

Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 14 6 3532-3542 (1996)

X-ray diffraction study of gallium nitride grown by MOCVD

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 193 2 391-397 (1996)

T. Metzger | H. Angerer | O. Ambacher | M. Stutzmann | E. Born

Yellow luminescence and hydrocarbon contamination in MOVPE-grown GaN

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 158 2 587-597 (1996)

P. DeMierry | O. Ambacher | H. Kratzer | M. Stutzmann

ASYNCHRONOUS TRANSFER MODE

COMMUTATION & TRANSMISSION 17 45-58 (1995)

H. SEGUIN | M. LEMONIER | M. STUTZMANN | P. GRAFF | D. HERZ

CORRELATION BETWEEN THE LUMINESCENCE AND RAMAN PEAKS IN QUANTUM-CONFINED SYSTEMS

THIN SOLID FILMS 255 1-2 241-245 (1995)

P. DEAK | Z. HAJNAL | M. STUTZMANN | H. D. FUCHS

DEFECT CREATION IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS

PHYSICAL REVIEW B 52 7 4680-4683 (1995)

C. F. O. GRAEFF | M. S. BRANDT | M. STUTZMANN | M. J. POWELL

Optical properties of silicon nanostructures

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 192 2 273-286 (1995)

RADIATIVE AND NONRADIATIVE RECOMBINATION IN POROUS SILICON - WHAT CAN WE LEARN FROM SPIN-RESONANCE

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 97-106 (1995)

M. STUTZMANN | M. S. BRANDT

RESONANTLY EXCITED PHOTOLUMINESCENCE IN POROUS SILICON

THIN SOLID FILMS 255 1-2 250-253 (1995)

M. ROSENBAUER | D. H. LEACH | M. SENDOVAVASSILEVA | S. FINKBEINER | M. STUTZMANN

RESONANTLY EXCITED PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON

PHYSICAL REVIEW B 51 16 10539-10547 (1995)

M. ROSENBAUER | S. FINKBEINER | E. BUSTARRET | J. WEBER | M. STUTZMANN

Spin-dependent transport in SiC and III-V semiconductor devices

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS 196- 1915-1922 (1995)

N. M. Reinacher | M. S. Brandt | M. Stutzmann

STRUCTURAL AND LUMINESCENCE STUDIES OF STAIN-ETCHED AND ELECTROCHEMICALLY ETCHED GERMANIUM

THIN SOLID FILMS 255 1-2 282-285 (1995)

TRANSPORT-PROPERTIES OF SILOXENE

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 190 1 107-110 (1995)

M. ROSENBAUER | A. HOPNER | U. DETTLAFFWEGLIKOWSKA | M. STUTZMANN

TRIPLET EXCITONS IN POROUS SILICON AND SILOXENE

SOLID STATE COMMUNICATIONS 93 6 473-477 (1995)

UNTITLED

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 148 2 U1-U1 (1995)

AN ALTERNATIVE DEGRADATION METHOD FOR AMORPHOUS HYDROGENATED SILICON - THE CONSTANT DEGRADATION METHOD

JOURNAL OF APPLIED PHYSICS 75 5 2507-2515 (1994)

EFFECTS OF PRESSURE ON THE OPTICAL-ABSORPTION AND PHOTOLUMINESCENCE OF WOHLER SILOXENE

PHYSICAL REVIEW B 49 8 5362-5367 (1994)

EFFECTS OF THERMAL ANNEALING ON THE OPTOELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS-GERMANIUM

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 69 2 387-396 (1994)

C. F. O. GRAEFF | M. STUTZMANN | K. EBERHARDT

LATERAL STRUCTURING OF SILICON THIN-FILMS BY INTERFERENCE CRYSTALLIZATION

APPLIED PHYSICS LETTERS 64 23 3148-3150 (1994)

M. HEINTZE | P. V. SANTOS | C. E. NEBEL | M. STUTZMANN

PLASMA DAMAGE AND ACCEPTOR PASSIVATION IN D2-PLASMA-TREATED INPZN - A PHOTOLUMINESCENCE AND ELLIPSOMETRY STUDY

PHYSICAL REVIEW B 49 8 5283-5290 (1994)

P. DEMIERRY | P. ETCHEGOIN | M. STUTZMANN

PULSED-LIGHT SOAKING OF HYDROGENATED AMORPHOUS-SILICON

PHYSICAL REVIEW B 50 16 11592-11605 (1994)

M. STUTZMANN | M. C. ROSSI | M. S. BRANDT

SPECIAL ISSUE - CARDONA,MANUEL - A COLLECTION OF PAPERS TO CELEBRATE HIS 60TH BIRTHDAY - PREFACE

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 70 3 311-311 (1994)

J. ZEGENHAGEN | C. THOMSEN | M. STUTZMANN | K. SYASSEN

SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON-GERMANIUM ALLOYS

PHYSICAL REVIEW B 49 16 11028-11034 (1994)

C. F. O. GRAEFF | M. STUTZMANN | M. S. BRANDT

ACCELERATED HYDROGEN MIGRATION UNDER STEADY-STATE AND PULSED ILLUMINATION IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 273-276 (1993)

P. V. SANTOS | M. S. BRANDT | R. A. STREET | M. STUTZMANN

ELECTRONIC AND STRUCTURAL-PROPERTIES OF POROUS SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 931-936 (1993)

ELECTRONIC DEFECTS IN SILICON INDUCED BY DEUTERIUM PLASMA TREATMENT

SOLID STATE COMMUNICATIONS 86 7 421-424 (1993)

D. DIMOVAMALINOVSKA | M. STUTZMANN

LIGHT-INDUCED ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

APPLIED PHYSICS LETTERS 62 23 3001-3003 (1993)

C. F. O. GRAEFF | R. BUHLEIER | M. STUTZMANN

LIGHT-SCATTERING BY ACOUSTIC PHONONS IN UNHYDROGENATED AND HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 927-930 (1993)

E. BUSTARRET | C. THOMSEN | M. STUTZMANN | A. ASANO | C. SUMMONTE

LUMINESCENCE AND OPTICAL-PROPERTIES OF SILOXENE

JOURNAL OF LUMINESCENCE 57 1-6 321-330 (1993)

MICROSCOPIC ORIGIN AND ENERGY-LEVELS OF THE STATES PRODUCED IN A-SI-H BY PHOSPHORUS DOPING

PHYSICAL REVIEW B 47 20 13283-13294 (1993)

J. KOCKA | J. STUCHLIK | M. STUTZMANN | L. CHEN | J. TAUC

POROUS SILICON AND SILOXENE - VIBRATIONAL AND STRUCTURAL-PROPERTIES

PHYSICAL REVIEW B 48 11 8172-8183 (1993)

PROPERTIES OF SPUTTERED A-SIOX-H ALLOYS WITH A VISIBLE LUMINESCENCE

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 1089-1092 (1993)

SPIN-DEPENDENT PHOTOCONDUCTIVITY AS A FUNCTION OF WAVELENGTH - A TEST FOR THE CONSTANT PHOTOCURRENT METHOD IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 547-550 (1993)

SPIN-DEPENDENT PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 15-18 (1993)

C. F. O. GRAEFF | M. S. BRANDT | K. EBERHARDT | I. CHAMBOULEYRON | M. STUTZMANN

SPIN-DEPENDENT TRANSPORT IN AMORPHOUS-SILICON NIN-STRUCTURES

JOURNAL OF NON-CRYSTALLINE SOLIDS 166 693-696 (1993)

M. S. BRANDT | M. STUTZMANN | J. KOCKA

TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN POROUS SILICON AND RELATED MATERIALS

JOURNAL OF LUMINESCENCE 57 1-6 153-157 (1993)

M. ROSENBAUER | M. STUTZMANN | H. D. FUCHS | S. FINKBEINER | J. WEBER

TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON - COMMENT

APPLIED PHYSICS LETTERS 63 4 565-566 (1993)

M. ROSENBAUER | H. FUCHS | M. STUTZMANN

TRANSIENT PHOTOLUMINESCENCE DECAY IN POROUS SILICON AND SILOXENE

JOURNAL OF LUMINESCENCE 57 1-6 231-234 (1993)

S. FINKBEINER | J. WEBER | M. ROSENBAUER | M. STUTZMANN

A COMMENT ON THERMAL DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON

PHILOSOPHICAL MAGAZINE LETTERS 66 3 147-150 (1992)

ACCELERATED STABILITY TEST FOR AMORPHOUS-SILICON SOLAR-CELLS

APPLIED PHYSICS LETTERS 60 14 1709-1711 (1992)

M. C. ROSSI | M. S. BRANDT | M. STUTZMANN

EXCITONIC STATES IN HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 141 1-3 97-105 (1992)

M. STUTZMANN | M. S. BRANDT

NEW GROWTH TECHNIQUE FOR LUMINESCENT LAYERS ON SILICON

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 54 6 567-569 (1992)

SILOXENE - CHEMICAL QUANTUM CONFINEMENT DUE TO OXYGEN IN A SILICON MATRIX

PHYSICAL REVIEW LETTERS 69 17 2531-2534 (1992)

P. DEAK | M. ROSENBAUER | M. STUTZMANN | J. WEBER | M. S. BRANDT

SPIN-DEPENDENT EFFECTS IN POROUS SILICON

APPLIED PHYSICS LETTERS 61 21 2569-2571 (1992)

THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION

SOLID STATE COMMUNICATIONS 81 4 307-312 (1992)

M. S. BRANDT | H. D. FUCHS | M. STUTZMANN | J. WEBER | M. CARDONA

VISIBLE LUMINESCENCE FROM POROUS SILICON AND SILOXENE

PHYSICA SCRIPTA T45 309-313 (1992)

VISIBLE LUMINESCENCE FROM SILICON

FESTKORPERPROBLEME - ADVANCES IN SOLID STATE PHYSICS 32 32 179-197 (1992)

VISIBLE-LIGHT EMISSION AT ROOM-TEMPERATURE FROM ANODIZED PLASMA-DEPOSITED SILICON THIN-FILMS

APPLIED PHYSICS LETTERS 61 13 1552-1554 (1992)

A COMPARISON OF HYDROGEN INCORPORATION AND EFFUSION IN DOPED CRYSTALLINE SILICON, GERMANIUM, AND GALLIUM-ARSENIDE

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 53 1 47-53 (1991)

M. STUTZMANN | J. B. CHEVRIER | C. P. HERRERO | A. BREITSCHWERDT

ACCELERATED METASTABLE DEFECT CREATION IN A-SI-H BY SHORT LIGHT-PULSES

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 231-234 (1991)

M. STUTZMANN | J. NUNNENKAMP | M. S. BRANDT | A. ASANO | M. C. ROSSI

BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON

PHYSICAL REVIEW B 43 2 1555-1575 (1991)

C. P. HERRERO | M. STUTZMANN | A. BREITSCHWERDT

COMPOSITIONAL DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA IN HYDROGENATED AMORPHOUS SILICON-SULFUR ALLOYS

JOURNAL OF LUMINESCENCE 48-9 641-644 (1991)

DEPTH PROFILING OF DEFECTS IN A-SI-H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 623-626 (1991)

A. ASANO | M. STUTZMANN

DEPTH PROFILING OF NONUNIFORM OPTICAL-ABSORPTION IN THIN-FILMS - APPLICATION TO HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF APPLIED PHYSICS 70 9 5025-5034 (1991)

A. ASANO | M. STUTZMANN

ELECTRONIC LEVELS OF PHOSPHORUS DONORS IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 379-382 (1991)

J. KOCKA | J. STUCHLIK | M. STUTZMANN | L. CHEN | J. TAUC

ELECTRONIC-PROPERTIES OF A-SI,S-H AND A-SI,SE-H ALLOYS

SOLAR ENERGY MATERIALS 23 2-4 334-339 (1991)

EXCITONS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON

APPLIED PHYSICS LETTERS 58 15 1620-1622 (1991)

EXPLOSIVE ISOTHERMAL HYDROGEN EXODIFFUSION IN VHF-GD A-SI-H THICK LAYERS

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 53-56 (1991)

E. BUSTARRET | M. BRANDT | M. STUTZMANN | M. FAVRE

FAST METASTABLE-DEFECT CREATION IN AMORPHOUS-SILICON BY FEMTOSECOND LIGHT-PULSES

PHYSICAL REVIEW LETTERS 67 17 2347-2350 (1991)

M. STUTZMANN | J. NUNNENKAMP | M. S. BRANDT | A. ASANO

HIGH BAND-GAP HYDROGENATED AMORPHOUS SILICON-SELENIUM ALLOYS

JOURNAL OF APPLIED PHYSICS 70 9 4926-4930 (1991)

HYDROGEN IN SEMICONDUCTORS - BULK AND SURFACE-PROPERTIES - PROCEEDINGS OF THE 6TH TRIESTE IUPAP-ICTP SEMICONDUCTOR SYMPOSIUM INTERNATIONAL-CENTER-FOR-THEORETICAL-PHYSICS TRIESTE, ITALY, 27-31 AUGUST 1990 - INTRODUCTION

PHYSICA B 170 1-4 R8-R9 (1991)

J. CHEVALLIER | M. STUTZMANN

HYDROGEN PASSIVATION AND REACTIVATION OF SHALLOW ZN ACCEPTORS IN GAAS

APPLIED SURFACE SCIENCE 50 1-4 390-394 (1991)

A. W. R. LEITCH | T. PRESCHA | M. STUTZMANN

HYDROGENATION OF INAS ON GAAS HETEROSTRUCTURES

JOURNAL OF APPLIED PHYSICS 70 3 1461-1466 (1991)

KINETICS OF LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - THE CONSTANT DEGRADATION METHOD

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 211-214 (1991)

MOLYBDENUM IMPURITY STATES IN AMORPHOUS-SILICON AND RELATED MATERIALS

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 63 1 151-162 (1991)

M. STUTZMANN | J. STUKE

SPIN-DEPENDENT CONDUCTIVITY IN AMORPHOUS HYDROGENATED SILICON

PHYSICAL REVIEW B 43 6 5184-5187 (1991)

STATES OF HYDROGEN IN CRYSTALLINE SILICON

PHYSICA B 170 1-4 240-244 (1991)

M. STUTZMANN | W. BEYER | L. TAPFER | C. P. HERRERO

STRUCTURAL AND ELECTRONIC-PROPERTIES OF TERNARY HYDROGENATED AMORPHOUS SILICON-SULFUR-SELENIUM ALLOYS

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 911-914 (1991)

STRUCTURAL-PROPERTIES OF LI-DOPED HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 137 107-110 (1991)

K. PIERZ | M. STUTZMANN | S. ZOLLNER | W. BEYER | C. BRILLERTY

DEUTERIUM EFFUSION MEASUREMENTS IN DOPED CRYSTALLINE SILICON

JOURNAL OF APPLIED PHYSICS 68 3 1406-1409 (1990)

M. STUTZMANN | M. S. BRANDT

Electronic and structural characterization of the near surface layer and the bulk in

S. Aljishi, Shu Jin, M. Stutzmann, and L. Ley
Mat. Res. Soc. Conf. Proc. Vol. 164 (Materials Research Society, Pittsburgh, 1990), p. 51
85. Hydrogen diffusion in boron-doped silicon
C. P. Herrero, M. Stutzmann, and A. Breitschwerdt
MRS Conf. Proc. Vol. 163 (Materials Research Society, Pittsburgh, 1990), p. 395

ELECTRONIC-PROPERTIES OF SEMICONDUCTING FESI2 FILMS

JOURNAL OF APPLIED PHYSICS 68 4 1726-1734 (1990)

LIGHT-INDUCED DEFECT CREATION IN AMORPHOUS-SILICON - SINGLE CARRIER VERSUS EXCITONIC MECHANISMS

APPLIED PHYSICS LETTERS 56 23 2313-2315 (1990)

CRITIQUE OF (TIME)1/3 KINETICS OF DEFECT FORMATION IN AMORPHOUS SI-H AND A POSSIBLE ALTERNATIVE MODEL - COMMENT ON KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON - RESPONSE

APPLIED PHYSICS LETTERS 54 4 399-400 (1989)

W. B. JACKSON | C. C. TSAI | M. STUTZMANN

DEFECT DENSITY AND STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-SULFUR ALLOYS

JOURNAL OF NON-CRYSTALLINE SOLIDS 114 462-464 (1989)

HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS IN SILICON

PHYSICA SCRIPTA T25 276-282 (1989)

M. STUTZMANN | C. P. HERRERO

METAL IMPURITIES IN A-SI-H AND OTHER AMORPHOUS-SEMICONDUCTORS

JOURNAL OF NON-CRYSTALLINE SOLIDS 114 414-416 (1989)

MICROSCOPIC NATURE OF COORDINATION DEFECTS IN AMORPHOUS-SILICON

PHYSICAL REVIEW B 40 14 9834-9840 (1989)

M. STUTZMANN | D. K. BIEGELSEN

NMR INVESTIGATION OF HYDROGEN IN AMORPHOUS-SILICON AND RELATED MATERIALS

JOURNAL OF NON-CRYSTALLINE SOLIDS 114 211-216 (1989)

J. B. BOYCE | S. E. READY | M. STUTZMANN | R. E. NORBERG

STRUCTURAL, OPTICAL, AND SPIN PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS

JOURNAL OF APPLIED PHYSICS 66 2 569-592 (1989)

M. STUTZMANN | R. A. STREET | C. C. TSAI | J. B. BOYCE | S. E. READY

THE DEFECT DENSITY IN AMORPHOUS-SILICON

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 60 4 531-546 (1989)

DANGLING OR FLOATING BONDS IN AMORPHOUS-SILICON

PHYSICAL REVIEW LETTERS 60 16 1682-1682 (1988)

M. STUTZMANN | D. K. BIEGELSEN

HYDROGEN VIBRATIONS IN SEMICONDUCTORS AND INSULATORS

PHYSICA STATUS SOLIDI B-BASIC RESEARCH 149 2 K95-K99 (1988)

J. TATARKIEWICZ | M. STUTZMANN

LATTICE-RELAXATION DUE TO HYDROGEN PASSIVATION IN BORON-DOPED SILICON

APPLIED PHYSICS LETTERS 52 20 1667-1669 (1988)

M. STUTZMANN | J. HARSANYI | A. BREITSCHWERDT | C. P. HERRERO

MICROSCOPIC STRUCTURE OF BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON

PHYSICAL REVIEW B 38 17 12668-12671 (1988)

C. P. HERRERO | M. STUTZMANN

NEW RAMAN LINES IN CDF2 IRRADIATED WITH HYDROGEN AND DEUTERIUM

ACTA PHYSICA POLONICA A 73 3 377-379 (1988)

P. CIEPIELEWSKI | M. STUTZMANN | J. TATARKIEWICZ

STRESS-INDUCED HYDROGEN MOTION IN BORON-DOPED CRYSTALLINE SILICON

SOLID STATE COMMUNICATIONS 68 12 1085-1088 (1988)

C. P. HERRERO | M. STUTZMANN

DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM

PHYSICAL REVIEW B 35 11 5666-5701 (1987)

M. STUTZMANN | D. K. BIEGELSEN | R. A. STREET

EFFECTS OF DOPANT AND IMPURITY INCORPORATION ON METASTABLE LIGHT-INDUCED DEFECT FORMATION

SOLAR CELLS 21 431-438 (1987)

W. B. JACKSON | M. STUTZMANN | C. C. TSAI

ELECTRON-SPIN RESONANCE OF SHALLOW DEFECT STATES IN AMORPHOUS-SILICON AND GERMANIUM

JOURNAL OF NON-CRYSTALLINE SOLIDS 97-8 105-108 (1987)

ELECTRONIC STATES IN THE GAP OF AMORPHOUS SILICON-GERMANIUM ALLOYS

JOURNAL OF NON-CRYSTALLINE SOLIDS 97-8 1011-1014 (1987)

M. STUTZMANN | C. C. TSAI | R. A. STREET

HYDROGEN PASSIVATION OF BORON ACCEPTORS IN SILICON - RAMAN STUDIES

PHYSICAL REVIEW B 35 11 5921-5924 (1987)

OCCUPANCY OF DANGLING BOND DEFECTS IN DOPED HYDROGENATED AMORPHOUS-SILICON

SOLID STATE COMMUNICATIONS 62 3 153-157 (1987)

M. STUTZMANN | W. B. JACKSON

ON THE STRUCTURE OF DANGLING BOND DEFECTS IN SILICON

ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE 151 211-222 (1987)

RAMAN-SCATTERING OF HYDROGEN-IMPLANTED AND DEUTERIUM-IMPLANTED CADMIUM FLUORIDE

JOURNAL OF APPLIED PHYSICS 62 9 3922-3924 (1987)

M. STUTZMANN | J. TATARKIEWICZ

TEMPERATURE-DEPENDENCE OF HYDROGEN VIBRATIONAL-MODES IN PASSIVATED BORON-DOPED SILICON

APPLIED PHYSICS LETTERS 51 18 1413-1415 (1987)

M. STUTZMANN | C. P. HERRERO

THE ROLE OF DANGLING BONDS IN THE TRANSPORT AND RECOMBINATION OF A-SI-GE-H ALLOYS

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 56 3 289-303 (1987)

R. A. STREET | C. C. TSAI | M. STUTZMANN | J. KAKALIOS

THERMALLY AND OPTICALLY INDUCED METASTABILITIES IN DOPED HYDROGENATED AMORPHOUS-SILICON - ELECTRON-SPIN-RESONANCE STUDIES

PHYSICAL REVIEW B 35 18 9735-9743 (1987)

WEAK BOND DANGLING BOND CONVERSION IN AMORPHOUS-SILICON

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 56 1 63-70 (1987)

ANNEALING OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

PHYSICAL REVIEW B 34 1 63-72 (1986)

M. STUTZMANN | W. B. JACKSON | C. C. TSAI

EFFECT OF TEMPERATURE DURING ILLUMINATION ON ANNEALING OF METASTABLE DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON

APPLIED PHYSICS LETTERS 49 15 957-959 (1986)

W. B. JACKSON | M. STUTZMANN

ELECTRON-NUCLEAR DOUBLE-RESONANCE EXPERIMENTS IN HYDROGENATED AMORPHOUS-SILICON

PHYSICAL REVIEW B 34 5 3093-3107 (1986)

M. STUTZMANN | D. K. BIEGELSEN

ELECTRON-SPIN-RESONANCE-TRANSIENT SPECTROSCOPY

PHYSICAL REVIEW B 34 1 54-62 (1986)

W. B. JACKSON | M. STUTZMANN | C. C. TSAI

HYPERFINE STUDIES OF DANGLING BONDS IN AMORPHOUS-SILICON

PHYSICAL REVIEW B 33 5 3006-3011 (1986)

D. K. BIEGELSEN | M. STUTZMANN

LIGHT-INDUCED METASTABLE DEFECTS IN AMORPHOUS-SILICON - THE ROLE OF HYDROGEN

APPLIED PHYSICS LETTERS 48 1 62-64 (1986)

M. STUTZMANN | W. B. JACKSON | A. J. SMITH | R. THOMPSON

THE DOPING EFFICIENCY IN AMORPHOUS-SILICON AND GERMANIUM

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 53 1 L15-L21 (1986)

2-LEVEL SYSTEMS IN HYDROGENATED AMORPHOUS-SILICON - NMR-STUDIES

PHYSICAL REVIEW B 32 9 6062-6065 (1985)

J. B. BOYCE | M. STUTZMANN | S. E. READY

DONOR STATES IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM

PHYSICAL REVIEW LETTERS 54 16 1836-1839 (1985)

M. STUTZMANN | R. A. STREET

DOPANT AND DEFECT STATES IN A-SI-H

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL 52 3 235-245 (1985)

R. A. STREET | D. K. BIEGELSEN | W. B. JACKSON | N. M. JOHNSON | M. STUTZMANN

DOPANT STATES AND RECOMBINATION IN COMPENSATED A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 647-650 (1985)

M. STUTZMANN | D. K. BIEGELSEN | R. A. STREET

INTERFACE EFFECTS IN AMORPHOUS-SILICON NITRIDE MULTILAYERS

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 995-998 (1985)

C. C. TSAI | M. J. THOMPSON | R. A. STREET | M. STUTZMANN | F. PONCE

LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 363-372 (1985)

M. STUTZMANN | W. B. JACKSON | C. C. TSAI

LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY

PHYSICAL REVIEW B 32 1 23-47 (1985)

M. STUTZMANN | W. B. JACKSON | C. C. TSAI

MOLECULAR-HYDROGEN IN AMORPHOUS SI-NMR STUDIES

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 265-268 (1985)

J. B. BOYCE | M. STUTZMANN | S. E. READY

NATIVE DEFECTS AT THE SI/SIO2 INTERFACE - AMORPHOUS-SILICON REVISITED

APPLIED SURFACE SCIENCE 22-3 MAY 879-890 (1985)

D. K. BIEGELSEN | N. M. JOHNSON | M. STUTZMANN | E. H. POINDEXTER | P. J. CAPLAN

ORIENTATIONAL ORDERING AND MELTING OF MOLECULAR H-2 IN AN A-SI MATRIX - NMR-STUDIES

PHYSICAL REVIEW LETTERS 54 6 562-565 (1985)

J. B. BOYCE | M. STUTZMANN

PROTON-T1 FOR SOLID H-2 IN A-SI-H

JOURNAL OF NON-CRYSTALLINE SOLIDS 77-8 711-714 (1985)

V. P. BORK | P. A. FEDDERS | R. E. NORBERG | J. B. BOYCE | M. STUTZMANN

ROLE OF MECHANICAL-STRESS IN THE LIGHT-INDUCED DEGRADATION OF HYDROGENATED AMORPHOUS-SILICON

APPLIED PHYSICS LETTERS 47 1 21-23 (1985)