Publications
Magnetic resonance investigations of defects in (GaN)-N-14 and (GaN)-N-15
JOURNAL OF APPLIED PHYSICS 88 6 3249-3253 (2000)
M. W. Bayerl | N. M. Reinacher | H. Angerer | O. Ambacher | M. S. Brandt | M. Stutzmann
Disorder-activated scattering and two-mode behavior in Raman spectra of isotopic GaN and AlGaN
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 216 1 807-811 (1999)
N. Wieser | O. Ambacher | H. Angerer | R. Dimitrov | M. Stutzmann | B. Stritzker | J. K. N. Lindner
Excitonic transitions in cubic AlGaN
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS 164 419-424 (1999)
G. Salviati | C. Zanotti-Fregonara | M. Albrecht | N. Armani | S. Christiansen | H. P. Strunk | H. Angerer | O. Ambacher | M. Stutzmann
Electrical and structural properties of AlGaN: a comparison with CVD diamond
DIAMOND AND RELATED MATERIALS 7 2-5 123-128 (1998)
M. Stutzmann | O. Ambacher | H. Angerer | C. E. Nebel | E. Rohrer
Nitrogen effusion and self-diffusion in (GaN)-N-14/(GaN)-N-15 isotope heterostructures
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 37 5A 2416-2421 (1998)
O. Ambacher | F. Freudenberg | R. Dimitrov | H. Angerer | M. Stutzmann
Quantitative transmission electron microscopy investigation of the relaxation by misfit dislocations confined at the interface of GaN/Al2O3(0001)
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & 37 1 84-89 (1998)
S. Kaiser | H. Preis | W. Gebhardt | O. Ambacher | H. Angerer | M. Stutzmann | A. Rosenauer | D. Gerthsen
Sound velocity of AlxGa1-xN thin films obtained by surface acoustic-wave measurements
APPLIED PHYSICS LETTERS 72 19 2400-2402 (1998)
C. Deger | E. Born | H. Angerer | O. Ambacher | M. Stutzmann | J. Hornsteiner | E. Riha | G. Fischerauer
Spin-dependent processes and Mg-acceptors in GaN single quantum well diodes and p-type GaN films
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 210 2 389-393 (1998)
M. W. Bayerl | M. S. Brandt | H. Angerer | O. Ambacher | M. Stutzmann
AlGaN-based Bragg reflectors
K. Wilmers, W. Richter, and M. Stutzmann
MRS Internet J. of Nitride Semicond. Res. 2, 203 (1997)
O. Ambacher | M. Arzberger | D. Brunner | H. Angerer | F. Freudenberg | N. Esser | T. Wethkamp
AlGaN-based Bragg reflectors
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2 22 art. no.-22 (1997)
O. Ambacher | M. Arzberger | D. Brunner | H. Angerer | F. Freudenberg | N. Esser | T. Wethkamp | K. Wilmers | W. Richter | M. Stutzmann
Determination of optical constants for the design of AlGaN-based Bragg reflectors
K. Wilmers, W. Richter, and M. Stutzmann
MRS Internet. J. of Nitride Semicond. Res. 2, 22 (1997)
O. Ambacher | M. Arzberger | D. Brunner | H. Angerer | F. Freudenberg | N. Esser | T. Wethkamp
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1-xN films
APPLIED PHYSICS LETTERS 71 11 1504-1506 (1997)
H. Angerer | D. Brunner | F. Freudenberg | O. Ambacher | M. Stutzmann | R. Hopler | T. Metzger | E. Born | G. Dollinger | A. Bergmaier | S. Karsch | H. J. Korner
Influence of magnesium doping on the structural properties of GaN layers
JOURNAL OF CRYSTAL GROWTH 181 3 197-203 (1997)
A. Cros | R. Dimitrov | H. Angerer | O. Ambacher | M. Stutzmann | S. Christiansen | M. Albrecht | H. P. Strunk
Optical constants of epitaxial AlGaN films and their temperature dependence
JOURNAL OF APPLIED PHYSICS 82 10 5090-5096 (1997)
D. Brunner | H. Angerer | E. Bustarret | F. Freudenberg | R. Hopler | R. Dimitrov | O. Ambacher | M. Stutzmann
Properties and applications of MBE grown AlGaN
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED 50 1-3 212-218 (1997)
M. Stutzmann | O. Ambacher | A. Cros | M. S. Brandt | H. Angerer | R. Dimitrov | N. Reinacher | T. Metzger | R. Hopler | D. Brunner | F. Freudenberg | R. Handschuh | C. Deger
Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 2 42-45 art. no.-43 (1997)
A. Cros | H. Angerer | R. Handschuh | O. Ambacher | M. Stutzmann
Raman study of the optical phonons in AlxGa1-xN alloys
SOLID STATE COMMUNICATIONS 104 1 35-39 (1997)
A. Cros | H. Angerer | O. Ambacher | M. Stutzmann | R. Hopler | T. Metzger
Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
APPLIED PHYSICS LETTERS 68 7 970-972 (1996)
W. Rieger | T. Metzger | H. Angerer | R. Dimitrov | O. Ambacher | M. Stutzmann
Optical patterning of GaN films
APPLIED PHYSICS LETTERS 69 12 1749-1751 (1996)
M. K. Kelly | O. Ambacher | B. Dahlheimer | G. Groos | R. Dimitrov | H. Angerer | M. Stutzmann
PEMBE-growth of gallium nitride on (0001)sapphire: A comparison to MOCVD grown GaN
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 1 1-46 U112-U116 (1996)
H. Angerer | O. Ambacher | R. Dimitrov | T. Metzger | W. Rieger | M. Stutzmann
Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy
SOLID STATE COMMUNICATIONS 97 5 365-370 (1996)
O. Ambacher | W. Rieger | P. Ansmann | H. Angerer | T. D. Moustakas | M. Stutzmann
X-ray diffraction study of gallium nitride grown by MOCVD
PHYSICA STATUS SOLIDI B-BASIC RESEARCH 193 2 391-397 (1996)
T. Metzger | H. Angerer | O. Ambacher | M. Stutzmann | E. Born