Gerhard Boehm

Room:	S214
Category:	Scientific Staff
Phone:	12791
Email:	Gerhard.Boehm(at)wsi.tum.de

Publications

Continuously Tunable, Polarization Stable SWG MEMS VCSELs at 1.55 µm

IEEE Photonics Technology Letters, Vol. PP, No. 99, pp. 1, early access, 2013.

Online Reference

InP-Based Type-II Quantum Well Lasers and LEDs

Invited Paper: IEEE Journal of Selected Topics in Quantum Electronics

Record Single-Mode, High-Power VCSELs by Inhibition of Spatial Hole Burning

Selected Topics in Quantum Electronics, IEEE Journal of, vol. PP, issue 99, p. 1, Feb 2013

Online Reference

1.3 µm short-cavity VCSELs enabling error-free transmission at 25 gbit/s over 25 km fibre link

Electronics Letters, vol. 48, no. 23, pp. 1487-1489, Nov. 2012

Online Reference

1.3um High-Power Short-Cavity VCSELs for High-Speed Applications

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 6 - 11 in San José, CA, USA (2012).

AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 µm grown by MOVPE on InP substrate

Journal of Crystal Growth, 2012 (doi = 10.1016/j.jcrysgro.2012.06.051)

AlGaInAsPSb-based High-Speed Short-Cavity VCSEL with single-mode Emission at 1.3µm grown by MOVPE on InP substrate

16th International Conference on Metal Organic Vapor Phase Epitaxy 2012, Busan (South Korea)

Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions

23^nd IEEE International Semiconductor Laser Conference (ISLC), San Diego (oral presentation)

Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation

Physica Status Solidi (c), Vol. 9, No. 2, pp. 298-301, (2012)

Download Online Reference

Terahertz quantum cascade laser sources based on Cherenkov Intra-cavity difference-frequency generation

Proc. of CLEO 2012, May 6-11, San Jose, CA, USA (2012)

Terahertz sources based on Cerenkov difference-frequency generation in quantum cascade lasers

Applied Physics Letters, vol. 100, No. 25, 251104, (2012)

Online Reference

Type-II InP-based lasers emitting at 2.55 µm

Applied Physics Letters, vol.100 (4), 041109, 2012

Type-II quantum wells on InP emitting up to 3.2µm

International Nano-Optoelectronics Workshop (iNow) 2012, Berkeley & Stanford, USA

Winner of "Best Poster Award 2012" (First Place)

102 nm Continuous Single-Mode Tuning with a Surface Micro-Machined tunable VCSEL

VCSEL-Day, European Workshop on VCSELs (oral presentation), May 12-13, Toulouse, (2011)

1550 nm High-Speed Short-Cavity VCSELs

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, No. 5, pp. 1158-1166, Sept./Oct., 2011.

40 Gbit/s modulation of 1550 nm VCSEL

Electronics Letters, Vol. 47, No. 4, pp. 270 - 271, Feb. 2011.

Online Reference

Broad gain bandwidth injectorless quantum-cascade lasers with a step well design

Appl. Phys. Lett. 98, 131113 (2011)

H. Li | S. Katz | G. Boehm | M. C. Amann

Download Online Reference

Broad gain injectorless quantum-cascade lasers with low threshold emitting around 8.6 µm

Asia Communications and Photonics Conference, November 13-16, Shanghai, China (2011).

H. Li | S. Katz | G. Boehm | M. C. Amann

Comparison of InP- and GaSb-based VCSELs emitting at 2.3 µm suitable for carbon monoxide detection

Journal of Crystal Growth 323, 442-445 (2011)

Download Online Reference

Concepts and Realization of Widely Tunable InP VCSELs

International Nano-Optoelectronics Workshop (iNow) 2011, St. Petersburg & Würzburg, Russia & Germany

Winner of "Best Poster Award 2011" (First Place)

Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation

Journal of Crystal Growth 323 (2011) 480-483

Online Reference

Extending the spectral range of GaInAs/AlInAs/InP quantum cascade lasers by intracavity nonlinear frequency mixing

11^th International Conference on Intersubband Transitions in Quantum Wells (ITQW-2011), September 11-17, Badesi, Sardinia, (2011).

Download Online Reference

First 102 nm Ultra-Widely Tunable MEMS VCSEL Based on InP

Winner of Best Student Paper Award 2011 (First Place)

IEEE Photonics 2011 Conference (IPC11) - (formerly Photonics Society Annual Meeting), paper ThDD1, Arlington, Virginia (USA), Oct. 2011

GaSb and InP-based VCSELs at 2.3 µm emission wavelength for tuneable diode laser spectroscopy of carbon monoxide (Invited)

SPIE Photonics West 2011, San Francisco, CA, USA (Invited talk)

Download

High-power 200-fs Kerr-lens mode-locked Yb:YAG thin-disk oscillator

Optics Letters, Doc. ID: 156488, Posted: 14.11.2011

Download Online Reference

High-Power BCB Encapsulated VCSELs based on InP

CLEO 2011 - Conference on Lasers and Electro Optics, BALTIMORE CONVENTION CENTER, Baltimore, Maryland, USA (2011)

Injectorless quantum cascade laser with two-phonon-resonance design using four alloys for emission wavelengths between 5 and 9 µm

Semicond. Sci. Technol. 26, 014018 (2011)

S. Katz | A. Vizbaras | G. Boehm | M. C. Amann

Download Online Reference

InP-based quantum cascade lasers with transversely integrated giant nonlinearity for wavelength generation in the 2.6 µm - 70 µm range by intracavity nonlinear frequency mixing

Proc. of the 40^th Freiburg Infrared Colloquium, February 16 -17, Freibug, Germany, (2011).

Download Online Reference

Nonresonant feeding of photonic crystal nanocavity modes by quantum dots

Journal of Applied Physics 109, 102404 (2011)

Online Reference

Novel concept of a monolithically integrated MEMS VCSEL

IPRM 2011 - International Conference on Indium Phosphide and Related Materials, Berlin, Germany (2011)

Room-temperature "lambda" ~ 2.7 µm quantum cascade laser sources based on intracavity second-harmonic generation

IEEE Journal of Quantum Electronics, Vol. 47, No. 5, pp. 691-697, (2011)

Download Online Reference

Short-wavelength injectorless quantum cascade laser based on second-harmonic generation

International Nano-Optoelectronics Workshop (iNow) 2011, St. Petersburg & Würzburg, Russia & Germany

Winner of "Best Poster Award 2011" (Third Place)

Download

Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation

International Symposium on Compound Semiconductors (ISCS-2011), May 22-26, Berlin, Germany, (2011)

Download

Surface Micromachined MEMS-tunable VCSELs with wide and fast wavelength tuning

Electronic Letters, Vol. 47, Issue 22, p. 1243-1244 (Oct. 2011)

Surface micromachined tunable 1.55µm-VCSEL with 102nm continous single-mode tuning

Optics Express 17336, vol. 19, No. 18, Aug. 2011

Terahertz quantum cascade sources based on intra-cavity frequency mixing in passive nonlinear sections

Proc. of CLEO 2011, May 1-6, Baltimore, Maryland, USA, (2011)

Terahertz sources based on intracavity frequency mixing in mid-infrared quantum cascade lasers with passive nonlinear sections

Applied Physics Letters, 98, 151114, (2011)

Download Online Reference

THz Quantum cascade sources based on intra-cavity frequency mixing in passive nonlinear sections

36^th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-2011), October 2-7, Houston, TX, USA (2011).

2nd place in best student paper competition

Download Online Reference

Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs

European Semiconductor Laser Workshop 2011, Lausanne, Switzerland

Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs

Oral. presentation - European Semiconductor Laser Workshop ESLW 2011, Lausanne (Switzerland), Sep. 2011

1.55 µm High-Speed VCSELs Enabling Error-Free Fiber-Transmission up to 25 Gbit/s

Proceedings of International Semiconductor Laser Conference (ISLC), September 26-30, Kyoto, (2010).

BCB Encapsulated VCSEL Based on InP Suitable for MEMS Technology

VCSEL Day 2010, European workshop organized by SUBTUNE (Oral Presentation)

Location: IEIIT CNR, Politecnico di Torino, Italy

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Design and realization of low density InAs quantum dots on AlGaInAs lattice matched to InP(001)

Journal of Crystal Growth 312, 2300 (2010)

Online Reference

Empirical modeling of the refractive index of (AlGaIn)As lattice matched to InP

Semiconductor Science and Technology 25 (2010) 045018

Online Reference

Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation

ICMBE Conference, Berlin, 2010

Evaluation of injectorless quantum cascade lasers byc ombining XRD- and laser-characterisation

Journal of Crystal Growth, Volume 323, Issue 1, 15 May 2011, Pages 480–483

Online Reference

High Efficiency Injectorless Quantum Cascade Lasers Emitting at 8.8 µm With 2-W Peak Pulsed Power per Facet at Room Temperature

IEEE Photonics Technology Letters 22 (24), 1811-1813 (2010).

H. Li | S. Katz | A. Vizbaras | G. Boehm | M. C. Amann

Download Online Reference

High-Speed and High-Power Vertical-Cavity Surface-Emitting Lasers based on InP suitable for Telecommunication and Gas Sensing

SPIE Remote Sensing, Security and Defence 2010, paper number 7828-6, Toulouse, Frankreich

Oral presentation

Download

High-Speed High-Power VCSELs based on InP

International Nano-Optoelectronics Workshop (iNow) 2010, Peking & Changchun, China

Winner of "Best Poster Award 2010" (First Place)

Download

Injectorless quantum cascade lasers for room-temperature short-wavelength emission by efficient second-harmonic generation

Proceedings of the 23^rd IEEE Photonics Society Annual Meeting, Denver, CO, USA pp. 367-368, (2010)

Download Online Reference

Long-Wavelength BTJ-VCSEL with High-Contrast Grating

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 16 - 21 in San José (2010).

Long-Wavelength High-Contrast Grating Vertical-Cavity Surface-Emitting Laser

IEEE Photonics Journal, vol. 2, no. 3, pp. 415-422, June 2010

Low-Parasitics 1.55 µm VCSELs with Modulation Bandwidths beyond 17 GHz

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 16 - 21 in San José (2010).

M. Mueller | W. Hofmann | M. Horn | G. Boehm | M. C. Amann

MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm

Journal of Crystal Growth doi:10.1016/j.jcrysgro.2010.11.139

Download

MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm

16th International Conference on Molecular Beam Epitaxy MBE 2010 (Contributed talk)

Mutual coupling of two semiconductor quantum dots via an optical nanocavity

Physical Review B 82, 075305 (2010)

Online Reference

Nonlinear gain behavior in injectorless quantum cascade lasers

Optical Engineering, 49, 111107 (2010)

S. Katz | A. Vizbaras | G. Boehm | M. C. Amann

Online Reference

Small-Signal Analysis of High-Temperature Stable 1550nm High-Speed VCSELs

Proceedings of 6th Joint Symposium on Opto- and Microelectronic Devices and Circuits, October 4-7, Berlin, (2010).

Download

Terahertz sources based on difference-frequency generation near exit facets in dual-wavelength mid-infrared quantum cascade lasers

CLEO/QELS: 2010, May 16-21, San Jose, California, USA (2010).

Download

THz quantum cascade laser sources for room-temperature operation

The 40^th winter colloquium on the Physics of Quantum Electronics (PQE-2010), January 3-7, Snowbird, Utah, USA (invited talk) (2010).

Online Reference

Tunable long wavelength MEMS VCSELs

SUBTUNE Workshop, Laserzentrum Nuremberg (oral presentation)

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Widely Tunable High-Speed Bulk-Micromachined Short-Wavelength MEMS-VCSEL

22^nd IEEE International Semiconductor Laser Conference (ISLC), Kyoto, Japan (oral presentation)

1.55 um InP-based Short-Cavity-VCSEL with Enhanced Modulation-Bandwidth of 15 GHz

35th European Conference on Optical Communication (ECOC), September 20-24, Vienna, (2009).

Invited Paper

M. Mueller | W. Hofmann | G. Boehm | M. C. Amann

1.55um VCSEL with Enhanced Modulation Bandwidth and Temperature Range

IEEE PHOTONICS TECHNOLOGY LETTERS; VOL. 20, NO. 11, FEBRUARY 2009

W. Hofmann | M. Mueller | G. Boehm | M. Ortsiefer | M. C. Amann

22-Gb/s Long Wavelength VCSELs

Optics Express, Vol. 17, Issue 20, pp. 17547-17554, (2009).

Online Reference

Al(In)As-(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers

J. Crystal Growth, 2009, 311, pp. 1932-1934

G. Boehm | S. Katz | R. Meyer | M. C. Amann

Download Online Reference

Antimon assisted growth of InAs Quantum Dots

Deutscher MBE Workshop, Bochum, Germany (2009)

Concept of a single photon source based on InP for emission at 1.55 µm

International Conference on Nanomaterials and Nanosystems (NanoMats2009), Istanbul, Turkey (2009)

Online Reference

Concept of a Single Photon Source Based on InP for emission at 1.55 µm (Poster)

Nim/CeNS/SFB486 Winterschool 2009, Nanosystems and Sensors, 1.-7. March 2009

Dephasing of Exciton Polaritons in Photoexcited InGaAs Quantum Dots in GaAs Nanocavities

Physical Review Letters 103, 087405 (2009)

Online Reference

Design and Technologies of High Speed MEMS-VCSEL Based on InP

VCSEL Day 2009, European Workshop organized by CHALMERS University of Technology, Gothenburg, Sweden

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Electrical control of spontaneous emission and strong coupling for a single quantum dot

New Journal of Physics 11, 023034 (2009)

Online Reference

Growth of low-density quantum dots emitting at telecommunication wavelengths

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2009).

High Power Injectorless Quantum Cascade Laser Structure in the 6.0 µm Wavelength Range

Proc. of CLEO, 2009, Baltimore

S. Katz | G. Boehm | M. C. Amann

High-performance injectorless quantum cascade laser emitting below 6 µm

Appl. Phys. Lett., 94, 151106, (2009)

S. Katz | A. Vizbaras | G. Boehm | M. C. Amann

Download Online Reference

Highly Temperature-Stable, Long Wavelength Short-Injector Quantum Cascade Laser

10^th International Conference on Intersubband Transitions in quantum Wells (ITQW-2009), September 6^th- 11^th, Montreal, Canada, (2009).

A. Vizbaras | S. Katz | G. Boehm | M. C. Amann

Download

InAs Quantum Dots emitting at 1.55 µm grown on InP substrate using MBE

DPG Fruehjahrstagung, Dresden, Germany (2009)

InAs Quantum Dots on AlGaInAs emitting in the optical C-Band at 1.55µm

21th International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, USA (2009)

Online Reference

Injectorless quantum cascade laser operating in continuous wave above room temperature

Semicond. Sci. Technol., 24, (2009), 122001.

S. Katz | A. Vizbaras | G. Boehm | M. C. Amann

Online Reference

Long-Wavelength BTJ-VCSELs with improved Modulation Bandwidth and Temperature Range

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and The International Quantum Electronics Conference (IQEC), May 31 - June 5 in Baltimore, (2009).

W. Hofmann | M. Mueller | G. Boehm | J. Rosskopf | M. C. Amann

Planarization of overgrown tunnel junctions for InP-based VCSEL by MOVPE

European Workshop on Metalorganic Vapor Phase Epitaxy 2009 (EWMOVPE XIII), Ulm, Germany

Download

Quantum Dots on AlGaInAs Lattice matched to InP emitting at 1.55 µm (Poster)

Nim/CeNS/SFB486 Winterschool 2009, Nanosystems and Sensors, 1.-7. March 2009

Short-Cavity Long-Wavelength VCSELs with Modulation Bandwidths in Excess of 15 GHz

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 21, NO. 21, NOVEMBER 1, 2009

M. Mueller | W. Hofmann | G. Boehm | M. C. Amann

Online Reference

Short-Injector Quantum Cascade Laser Emitting at 8 µm Wavelength With High Slope Efficiency

IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 21, No. 19, pp. 1384-1386, (2009).

A. Vizbaras | S. Katz | G. Boehm | M. C. Amann

Online Reference

1.55-µm VCSEL arrays for high-bandwidth WDM-PONs

IEEE Photonics Technology Letters 20 (2008) 291-293.

Continuous wave operation of injectorless quantum cascade lasers at low temperatures

Appl. Phys. Lett., 2008, 92, 181103

S. Katz | A. Friedrich | G. Boehm | M. C. Amann

Dual wavelength emission in injectorless quantum cascade lasers

Proc. of 20th IPRM, 2008, Versailles

S. Katz | M. Maier | G. Boehm | M. C. Amann

Download

Extended near-infrared wavelength VCSELs for optical sensing

IEEE/LEOS Intenational Semiconductor Laser Conference 2008, Sorrento, Italy

Online Reference

GaInAsN growth studies for InP based Long Wavelength Laser Applications

International Conference: 15th ICMBE 2008, Vancouver, Canada published in Journal of Crystal Growth, pp. 1719-1722

T. Gruendl | G. Boehm | R. Meyer | M. C. Amann

Online Reference

Growth of antimonides by MOVPE

DPG Fruehjahrstagung, Berlin, Germany, 2008

C. Grasse | R. Meyer | G. Boehm | M. C. Amann

Growth of low density quantum dots on AlGaInAs by MBE using ultra low growth rates

Semiconductor Quantum Dot Devices and Applications, Rennes, France (2008).

Growth of self-assembled quantum dots for single photon application at 1.55 µm

DPG Fruehjahrstagung, Berlin, Germany (2008)

Growth of various antimony-containing alloys by MOVPE

Journal of Crystal Growth 310, 4835-4838 (2008)

C. Grasse | G. Boehm | U. Breuer | R. Meyer | M. C. Amann

Growth of various antimony-containing alloys by MOVPE

14th International Conference on MOVPE, Metz, France (2008)

C. Grasse | G. Boehm | U. Breuer | R. Meyer | M. C. Amann

Download Online Reference

Injectorless quantum cascade lasers with threshold current densities below 500 A/cm²

Proc. of 21st ISLC, Sorrent, Italy (2008)

S. Katz | G. Boehm | M. C. Amann

Long-wavelength 2-D VCSEL arrays for optical interconnects

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CMW7

Long-wavelength VCSELs and VCSEL arrays for high-speed, high-power and high sensitivity

Proc. of III. International Conference on Laser Processes and Components (LPC) (2008) pp.33

W. Hofmann | G. Boehm | M. Ortsiefer | M. C. Amann

Low-threshold Injectorless Quantum Cascade Laser with Four Material Compositions

Electron. Lett., 2008, 44, pp. 580-581

S. Katz | G. Boehm | M. C. Amann

MBE Growth of active regions for electrically-pumped, cw-operating GaSb-based VCSELs

Journal of Crystal Growth 311 (2009), pp. 1908-1911

K. Kashani-Shirazi | A. Bachmann | G. Boehm | S. Ziegler | M. C. Amann

MBE growth of active regions for electrically-pumped, cw-operating GaSb-based VCSELs

15th international Conference on molecular beam epitaxy (MBE 2008), 3rd - 8th August 2008, Vancouver, Canada (2008)

Monolithic 2D high-power arrays of long-wavelength VCSELs

Photonics West, San Jose, USA (2008) 6908-06 pp. 1-7.

W. Hofmann | M. Görblich | M. Ortsiefer | G. Böhm | M. C. Amann

Quantum Dot Single Photon Source for 1.3 and 1.55 µm (Poster)

1st Joint Nano Workshop, 10.-11. June 2008

Realisation of Long Wavelength Lasers Based on InP Substrate

Invited talk: Graduierten Kolleg 2008, Darmstadt, Germany

T. Gruendl | G. Boehm | R. Meyer | M. C. Amann

Towards an electrically driven single photon source

DPG Fruehjahrstagung, Berlin, Germany (2008)

Towards an Electro-Optically Driven Single Photon emitting Device

The 8th International conference on Nanotechnology (IEEE-nano2008), Arlington Texas, USA (2008)

Online Reference

1 x 12 VCSEL array at 1.55 µm for high-bandwidth at metro-range

Proc. of European Conference on Optical Communications (ECOC) 2007, Berlin, Germany (2007) 211-212.

W. Hofmann | E. Wong | G. Böhm | M. Ortsiefer | M. C. Amann

Electrically probing photonic bandgap phenomena in contacted defect nanocavities

Appl. Phys. Lett. 91, 201111 (2007)

Online Reference

Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3µm

Journal of Crystal Growth 301 (2007) 941-944.

High-power 1.55 µm VCSEL arrays

Conference on Lasers and Electro-Optics CLEO Europe /IQEC, Munich, Germany (2007) pp. 1.

Incorporation behaviour of nitrogen in GaInAs layers based on InP substrate for indium concentrations from 0 to 100%.

Deutscher MBE Workshop 2007 (Forschungszentrum Jülich)

T. Gruendl | G. Boehm | R. Meyer | M. C. Amann

Linewidth of electrically pumped long-wavelength MEMS VCSELs

Conference on Lasers and Electro-Optics (CLEO) /Europe, Munich, Germany (2007).

Long-wavelength (L = 1.55 µm) monolithic VCSEL array with >3 W CW output power

Electronics Letters 43 (2007) 1025-1026.

W. Hofmann | M. Görblich | M. Ortsiefer | G. Böhm | M. C. Amann

Long-wavelength high-power VCSEL arrays

European Semiconductor Laser Workshop (ESLW), Berlin, Germany (2007).

W. Hofmann | M. Görblich | M. Ortsiefer | G. Böhm | M. C. Amann

Long-wavelength VCSELs for optical networks and trace-gas monitoring

Optics East, Baltimore, USA (2007) 67660F pp. 1-13 (invited).

Scaling rules for high-power 1.55 µm VCSEL arrays

Conference on Lasers and Electro-Optics CLEO/QELS, Baltimore, USA (2007) CTuGG3.

W. Hofmann | G. Böhm | M. Ortsiefer | M. C. Amann

Short-wavelength intersubband staircase lasers, with and without AlAs-blocking barriers

Semiconductor Science and Technology 22 (2007) 218-221.

A. Friedrich | G. Böhm | M. C. Amann

10-Gb/s data transmission using BCB passivated 1.55-µm InGaAlAs-InP VCSELs

IEEE Photonics Technology Letters 18 (2006) 424-426.

High speed (> 11 GHz) modulation of BCB-passivated 1.55 µm InGaAlAs-InP VCSELs

Electronics Letters 42 (2006) 976-978.

High speed modulation of BCB-passivated 1.55 µm VCSELs

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Duisburg, Germany (2006) 119-121.

High-temperature, low-threshold injectorless quantum-cascade lasers, emitting at 6.8µm

IEEE Internat. Semicond. Laser Conf., Kohala Coast, Hawaii (2006).

A. Friedrich | C. Huber | G. Böhm | M. C. Amann

Influence of Indium-free sublayers on the formation of self-assembled quantum dots on InP(001)-Substrates

DPG Fruehjahrstagung, Dresden, Germany (2006).

R. Enzmann | S. Dachs | G. Böhm | R. Meyer | M. C. Amann

InP-based VCSELs with buried tunnel junction for optical communication and sensing in the 1.3-2.3 µm wavelength range

IEEE International Semiconductor Laser Conference (ISLC), Waikoloa, USA (2006) 113-114.

Low-threshold quantum cascade lasers without injector regions, emitting at 6.7µm

International Conference on Indium Phosphide and Related Materials (IPRM), Princeton, USA (2006) 19-22.

A. Friedrich | G. Böhm | M. C. Amann

Low-threshold room-temperature operation of injectorless quantum-cascade lasers: influence of doping density

Electronics Letters 42 (2006) 1228-1229.

A. Friedrich | C. Huber | G. Böhm | M. C. Amann

MEMS-tunable 1.55-µm VCSEL with extended tuning range incorporating a buried tunnel junction

IEEE Photonics Technology Letters 18 (2006) 688-690.

M. Maute | B. Kögel | G. Böhm | P. Meissner | M. C. Amann

Uncooled high speed (> 11 GHz) 1.55 µm VCSELs for CWDM access networks

Europ. Conf. Optical Commun. (ECOC), Cannes, France (2006) 59-60.

W. Hofmann | G. Böhm | M. Ortsiefer | E. Wong | M. C. Amann

2.5 mW single-mode operation of 1.55 µm buried tunnel junction VCSELs

IEEE Photonics Technology Letters 17 (2005) 1596-1598.

Above room temperature operation of injectorless quantum cascade lasers

Indium Phosphide and Related Materials Conference (IPRM), Glasgow, Scotland, UK (2005).

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Coupled cavity phenomena within MEMS-tunable long-wavelength VCSELs

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA (2005) CThA4.

High performance injectorless quantum-cascade lasers

Electronics Letters 41 (2005) 529-531.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

High single mode output power from long-wavelength VCSELs using curved micro-mirrors for mode control

IEE Electronics Letters 41 (2005) 43-44.

Injectorless quantum-cascade lasers

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (2005).

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Laser hygrometer using a vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 1.84µm

IEEE Transactions of Instrumentation and Measurement 54 (2005) 1214-1218.

Long-wavelength MEMS tunable VCSEL with high sidemode suppression

IEEE/LEOS International Conference on Optical MEMS and Their Applications (MOEMS), Oulu, Finland (2005).

Long-wavelength tunable vertical-cavity surface-emitting lasers and the influence of coupled cavities

Opt. Express 13 (2005) 8008-8014.

Low-threshold injectorless quantum cascade lasers emitting at ?? 7.9 mm

International Conference on Intersubband Transitions in Quantum Wells (ITQW), Falmouth, Cape Cod, USA (2005).

A. Friedrich | G. Böhm | M. C. Amann

Manipulation of the spontaneous emission dynamics of quantum dots in two-dimensional photonic crystals

Phys. Rev. B 71, 241304 (R) (2005)

Online Reference

Quantum-cascade lasers without injector regions operating above room temperature

Applied Physics Letters 86 (2005) 161114.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

80°C continuous-wave operation of 2.01µm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters 16 (2004) 2209-2211.

Chirp and linewidth enhancement factor of 1.55µm VCSEL with buried tunnel junction

Electronics Letters 40 (2004) 1266-1267.

Continuously tunable long-wavelength MEMS-VCSEL with over 40 nm tuning range

IEEE Photonics Technology Letters 16 (2004) 2212-2214.

High-speed vertical-cavity laser diodes at 1.55µm

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China (2004) 5-6.

High-temperature (T=490K) operation of 5.8µm quantum cascade lasers with InP/GaInAs waveguides

Electronics Letters 40 (2004) 1416-1417.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

InP-based long-wavelength vertical-cavity surface-emitting lasers with buried tunnel junction

physica status solidi (c) 1 (2004) 2183-2209.

Long-wavelength InP-based VCSELs with buried tunnel junctions: properties and applications

Photonics West, San Jose, USA (2004) 1-15.

Micro-mechanically and widely tunable long-wavelength VCSELs

IEEE International Semiconductor Laser Conference, Matsue-shi, Japan (2004) 119-120.

Micro-mechanically tunable long wavelength VCSEL with buried tunnel junction

Electronics Letters 40 (2004) 430-431.

Micro-mechanically tunable long-wavelength VCSELs

IEEE Laser Workshop, San Francisco, USA (2004).

Very high temperature operation of 5.75 µm quantum-cascade lasers

International Conference on the Physics of Semiconductors (ICPS), Flagstaff, USA (2004) 1567-1568.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Electrically pumped room temperature CW-VCSELs with emission wavelength of 2 µm

Electronics Letters 39 (2003) 57-58.

InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 µm

Journal of Crystal Growth 251 (2003) 748-753.

Low-loss GaInAs-based waveguides for high-performance 5.5 mu m InP-based quantum cascade lasers

IEE Proceedings-Optoelectronics 150, 284-287 (2003)

G. Scarpa | N. Ulbrich | G. Böhm | G. Abstreiter | M. C. Amann

Single mode 1.55 µm VCSELs with low threshold and high output power

Electronics Letters 39 (2003) 1731-1732.

Tunable single and dual mode operation of an external cavity quantum-dot injection laser

J. Phys. D: Appl. Phys. 36, 1-3 (2003)

High-performance 5.5µm quantum cascade lasers with high-reflection coating

IEE Proc.-Optoelectron. 149, 201-205 (2002)

Intersubband staircase laser

Appl. Phys. Lett. 80, 4312-4314 (2002)

N. Ulbrich | G. Scarpa | G. Böhm | G. Abstreiter | M. C. Amann

Resonant effect of Zener tunneling current

Phys. Rev. B 65, 233308 (2002)

Download

Strain-compensated InP-based quantum cascade lasers with and without injector regions

in Proc.of the 14th Indium Phosphide and related materials conference, 735-738 (2002)

G. Scarpa | N. Ulbrich | G. Böhm | M. C. Amann

Ultrafast switch-off of an electrically pumped quantum-dot laser

Appl. Phys. Lett. 81, 1177-1179 (2002)

Vertical field effect transistors realized by cleaved-edge overgrowth

Physica E 13, 920-924 (2002)

Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission

Journal of Appl. Phys. 89, 1180-1183 (2001)

J. Feldmann | S. T. Cundiff | M. Arzberger | G. Böhm | G. Abstreiter

Charging dynamics of self-assembled InAs quantum dots investigated by wavelength selective optically induced charge stroage measurements

Phys. stat. sol. (b) 224, 357-360 (2001)

D. Heinrich | J. Hoffmann | A. Zrenner | G. Böhm | G. Abstreiter

Compositional analysis based upon electron holography and a chemically sensitive reflection

Microscopy of Semiconducting Materials 2001, Institute of Physics Conference Series 169, 33-36 (2001)

Continuous room-temperature operation of electrically pumped quantum-dot microcylinder lasers

Appl. Phys. Lett. 79, 1766-1768 (2001)

M. Arzberger | G. Böhm | M. C. Amann | G. Abstreiter

Dark pulse formation in a quantum-dot laser

Appl. Phys. Lett. 79, 18-20 (2001)

Gain characteristics of self-assembled InAs/GaAs quantum dots

phys. stat. sol. (b) 224, 827-831 (2001)

M. Arzberger | G. Böhm | M. C. Amann | G. Abstreiter

High-temperature (T> 470 K) pulsed operation of 5.5µm quantum cascade lasers with high-reflection coating

Electronics Letters 37, 1341-1342 (2001)

Intersubband photocurrent spectroscopy on self-assembled In(Ga)As/GaAs quantum dots

phys. stat. sol. (b) 224, 591-594 (2001)

L. Chu | A. Zrenner | M. Bichler | G. Böhm | G. Abstreiter

Optical and magneto-optical investigartions on single-quantum dots

Physica E 9, 114-123 (2001)

Phonon-assisted biexciton generation in a single quantum dot

phys. stat. sol. (b) 224, 337-341 (2001)

F. Findeis | A. Zrenner | G. Böhm | G. Abstreiter

Quantification of segregation and mass transport in InxGa1-xAs/GaAs Stranski-Krastanow layers

Phys. Rev. B 64, 245334 (2001)

Structural and chemical investigation of InAs/GaAs nanostructures by transmission electron microscopy

phys. stat. sol. (b) 224, 213-216 (2001)

Time-resolved amplified spontaneous emission in InAs/GaAs quantum dots

phys. stat. sol. (b) 224, 475-480 (2001)

Electron and hole storage in self-assembled InAs quantum dots

Physica E 7, 484-488 (2000)

Lateral intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

Appl. Phys. Lett. 76, 1944-1946 (2000)

L. Chu | A. Zrenner | G. Böhm | G. Abstreiter

Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers

Jpn. J. Appl. Phys. 39, 1727-1729 (2000)

Low-resistance InGa(Al)As tunnel junctions for long-wavelength vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters 39 (2000) 1727.

Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

Electronics Lett. 36, 87-88 (2000)

M. Arzberger | M. Lohner | G. Böhm | M. C. Amann

Multi-exciton spectroscopy on a self-assembled InGaAs/GaAs quantum dot

Physica E 7, 354-358 (2000)

F. Findeis | A. Zrenner | M. Markmann | G. Böhm | G. Abstreiter

Optical charging of self-assembled InAs quantum dots

in: Optical Properties of Semiconductor Nanostructures,
Eds.: M. L. Sadowski, M. Potemski, and M. Grynberg, Kluwer Academic Publishers, Dordrecht, page 365 (2000)

Optical spectroscopy on a single InGaAs/GaAs quantum dot in the few-exciton limit

Solid state communications 114, 227-230 (2000)

F. Findeis | A. Zrenner | G. Böhm | G. Abstreiter

Optical spectroscopy on single quantum dots

in: Adv. in Sol. State Phys. Vol. 40, ed.: B. Kramer (Vieweg, Braunschweig/Wiesbaden) 561-576 (2000)

Optically induced charge storage and de-charging in InAs quantum dots

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1115-1116 (2001)

D. Heinrich | A. Zrenner | G. Böhm | G. Abstreiter

Optically-induced charge storage in self-assembled InAs quantum dots

Thin Solid Films 380, 192-194 (2000)

Phonon assisted biexciton generation in a single quantum dot

Phys. Rev. B 61, R10579 (2000)

F. Findeis | A. Zrenner | G. Böhm | G. Abstreiter

Phonon assisted biexciton generation in a single quantum dot

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1147-1148 (2001)

F. Findeis | A. Zrenner | G. Böhm | G. Abreiter

Photocurrent and resonant Raman spectroscopy on self-assembled In(Ga)As/GaAs quantum dots

in: Proc. of the 25th Int. Conference on the Physics of Semiconductors, Osaka (2000);
eds.: N. Miura and T. Ando (Springer Proceedings 87), page 1207-1208 (2001)

L. Chu | A. Zrenner | M. Arzberger | G. Böhm | G. Abstreiter

Raman spectroscopy of In(Ga)As/GaAs quantum dots

Appl. Phys. Lett. 77, 3944-3946 (2000)

L. Chu | A. Zrenner | M. Bichler | G. Böhm | G. Abstreiter

Spectroscopy of single self-assembled quantum dots

Journal of Luminescence 87-89, 35 (2000)

STM-photocurrent-spectroscopy on single self-assembled InGaAs quantum dots

Physica E 7, 359-362 (2000)

E. Beham | A. Zrenner | G. Böhm

Influence of a thin AlAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots

Appl. Phys. Lett. 75, 3968-3970 (1999)

M. Arzberger | U. Käsberger | G. Böhm | G. Abstreiter

Influence of growth conditions on the photoluminescence of self-assambled InAs/GaAs quantum dots

J. of Appl. Phys. 85, 2355-2362 (1999)

L. Chu | M. Arzberger | G. Böhm | G. Abstreiter

Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

Appl. Phys. Lett. 75, 3599-3601 (1999)

L. Chu | A. Zrenner | G. Böhm | G. Abstreiter

Optically induced persistent charge storage effects in self assembled InAs quantum dots

Jpn. J. Appl. Phys. 38, 531-534 (1999)

Polarization dependent photocurrent spectroscopy of InAs/GaAs quantum dots

Appl. Phys. Lett. 75, 2247-2249 (1999)

L. Chu | M. Arzberger | A. Zrenner | G. Böhm | G. Abstreiter

Spatially resolved spectroscopy on single self-assembled quantum dots

Journal of Electronic Materials 28, 542 (1999)

Design and Fabrication of Double Modulation Doped InAlAs/InGaAs/InAs Heterojunction FET’s for High Speed and Millimeter-wave Applications

IEEE Electron Devices, Vol. 45 (1), 21-30 (1998)

Electrical Detection of Optically-Induced Charge Storage in Self-Assembled InAs Quantum Dots

Appl. Phys. Lett. 73, 2618-2620 (1998)

Electroluminescence studies of stacked self-assembled InAs/GaAs-quantum dots embedded in a Bragg resonator

Physica E 2, 594-598 (1998)

M. Arzberger | M. Hauser | G. Böhm | A. Zrenner | G. Abstreiter

MBE-Growth of Metamorphic InGaAlAs Buffers

Inst. of Physics Conference Series 156, 49-52 (1998)

Spatially resolved magneto-optics on confined systems

G. Abstreiter
Physica B 256-258, 300-307 (1998)

Spatially resolved optical spectroscopy on natural quantum dots

Applied Surface Science 123/124, 356-365 (1998)

Spectroscopy of excitonic Zeeman levels in single quantum dots

Physica E 2, 609-613 (1998)

A. Schaller | A. Zrenner | G. Abstreiter | G. Böhm

0.15 µm double modulation doped InAs-inserted-channel MODFETs: Gate recess for optimum RF performances

Electronics Lett. Vol. 33 (6), 532-533 (1997)

2 S/mm Transconductance InAs-Inserted-Channel Modulation Doped Field Effect Transistors with a Very Close Gate-to-Channel Separation of 14.5 nm

Jpn. J. Appl. Phys. Vol. 36 (Part 2, No. 4B), L470-L472 (1997)

Franz-Keldysh effect in lateral GaAs/AlGaAs based npn-structures

Appl. Phys. Lett. 70 (21), 2876-2878 (1997)

P. Baumgartner | C. Engel | G. Böhm | G. Abstreiter

High Performance Double Modulation Doped InAlAs/InGaAs/InAs HFETs

IEEE Electon Device Letters, Vol. 18 (7), 323-326 (1997)

STM-Cathodoluminescence of Self-Assembled InGaAs Quantum Dots

Phys. Stat. Sol. (a) 164, 301-305 (1997)

M. Markmann | A. Zrenner | G. Böhm | G. Abstreiter

Submilliampere vertical-cavity surface-emitting lasers with intracavity contacts and buried lateral current confinement

Inst. Phys. Conf. Ser. 155 (4), 381-385 (1997)

M. Hauser | H. Kratzer | G. Böhm | G. Tränkle | G. Weimann

Anomalous Transport of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells

Surface Science 361/362, 243-246 (1996).
(Proc. of the EP2DS XI, Nottingham, UK, Aug. 7-11, 1995)

Electric-field-induced exciton transport in coupled quantum well structures

Solid State Electronics Vol. 40 (1-8), 429-431 (1996)
(7th Int. Conf. on Modulated Semiconductor Structures, Madrid, Spain, July 10-14, 1995.)

M. Hagn | A. Zrenner | G. Böhm | G. Weimann

Far-infrared-study of shallow etched quantum wires on high mobility GaAs/AlGaAs heterostructures and quantum-wells

Solid-State Electronics, Vol. 40 (1-8), 333-337 (1996).

Linewidth and finestructure of optical spectra from single quantum dots

Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, (1996). Eds.: M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996. Vol. 2. 1433-1436.

Quenching of the Nonradiative Auger-Recombination in Coupled Quantum Wells

Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin, Germany, July 21-26, (1996). Eds.: M. Scheffler and R. Zimmermann. World Scientific, Singapore 1996. Vol. 3. 1991-1994.

M. Hagn | A. Zrenner | G. Böhm | G. Weimann

Resonant inelastic light scattering by electronic excitations in tunable quantum wire structures

Surface Science 361/362, 783-787 (1996)
(Proc. of the EP2DS XI, Nottingham, UK, Aug. 7-11, 1995)

Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode

Physica B 227, Issues 1-4, 206-209 (1996)

Time resolved spectroscopy of single quantum dots: Fermi gas of excitons?

Phys. Rev. Lett. 76, (19), 3622-3625 (1996)

Wannier-Stark oscillations in Zener tunneling currents

Solid-State Electronics 40, 245 (1996)

Download

Electric-field-induced exciton transport in coupled quantum well structures

Appl. Phys. Lett. 67 (2), 232-234 (1995)

M. Hagn | A. Zrenner | G. Böhm | G. Weimann

Fabrication of lateral npn-phototransistors with high gain and sub-µm spatial resolution

Appl. Phys. Lett. 66, (6), 751-753 (1995)

P. Baumgartner | C. Engel | G. Abstreiter | G. Böhm | G. Weimann

Optically detected cyclotron resonance on GaAs/AlxGaAs1-x quantum wells and quantum wires

Phys. Rev. B 52 (15), 11 313-11 318 (1995)

Photodetector with subwavelength spatial resolution

Ultramicroscopy 57, 208-211 (1995).(Proc. of the 2nd Int. Conf. on Near Field Optics, Raleigh, USA, October 20-22, 1993.)

Resonant inelastic light scattering by plasmons at the crossover from two- to one-dimensional behavior

Solid State Communications 93, (7), 569-574 (1995)

G. Schedelbeck | R. Strenz | G. Abstreiter | G. Böhm | G. Weimann

Wannier-Stark localization in superlattices

Jap. J. Appl. Phys. 34, 4519 (1995)

Download

Charge Transfer and Electroabsorption in an Electric Field Tunable Double Quantum Well Structure

Solid State Electronics, Vol. 37, (Nrs. 4-6), 1307-1310 (1994).
(Proc. of the 6th Int. Conf. on Modulated Semiconductor Structures, MSS6, Garmisch-Partenkirchen, August 23 - 27, 1993)

K. Bernhard | A. Zrenner | G. Böhm | G. Tränkle | G. Weimann

Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells

Phys. Rev. Lett. 73 (2), 304-307 (1994)

L. V. Butov | A. Zrenner | G. Abstreiter | G. Böhm | G. Weimann

Confined plasmons in shallow etched quantum wires

Semicond. Sci. Technol. 9, 399-403 (1994)

Evidence for the exciton condensation in coupled quantum wells at high magnetic fields

Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 328-331.

L. V. Butov | A. Zrenner | G. Abstreiter | G. Böhm | G. Weimann

Fabrication of in-plane-gate transistor structures by focused-laser-beam-induced Zn-doping of modulation-doped GaAs/AlGaAs quantum wells

Appl. Phys. Lett. 64, (5), 592-594 (1994)

Fano Resonances in the excitation spectra of semiconductor quantum wells

Phys. Rev. B 49, (8), 5757-5760 (1994)

D. Y. Oberli | G. Böhm | G. Weimann | J. A. Brum

FIR-transmission and -photoconductivity studies of shallow etched quantum wires

Proc. of the 11th Int. Conf. on High Magnetic Fields in the Physics of Semiconductors (SEMI MAG 94), Boston, USA, August 8-12, 1994. Ed.: D. Heiman. World Scientific, Singapore 1995. 504-507.

Information on the confinement potential in GaAs/AlGaAs wires from magneto- luminescence experiments

Surface Science 305, 591-596 (1994).
(Proc. of the 10th Int. Conf. on Electronic Properties of Two-Dimensional Systems, EP2DS10, Newport, RI, USA, May 31 - June 4, 1993).

Lateral npn-phototransistors with high gain and high spatial resolution fabricated by focused laser beam induced Zn doping of GaAs/AlGaAs quantum wells

Proc. of the 21st Int. Conf. on Compound Semiconductors, San Diego, USA, September 18 - 22, 1994. Ed.: Herb Goronkin and Umesh Mishra. IOP Publishing Ltd., 1995. 591-596. (Inst. Phys. Conf. Ser. No. 141: Chapter 5).

Photoluminescence and two-photon absorption of the biexciton state in a GaAs/AlGaAs single quantum dot

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 3. 1823-1826.

K. Brunner | G. Abstreiter | G. Böhm | G. Tränkle | G. Weimann

Quantum Dots Formed by Interface Fluctuations in AlAs/GaAs Coupled Quantum Well Structures

Phys. Rev. Lett. 72 (21), 3382-3385 (1994)

Resonant inelastic light scattering by inter- and intrasubband excitations in shallow etched quantum dots and wires

Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 3. 1831-1834.

Sharp-Line Photoluminescence and Two-Photon Absorption of Zero-Dimensional Biexcitons in a GaAs/AlGaAs Structure

Phys. Rev. Lett. 73, (8), 1138-1141 (1994)

K. Brunner | G. Abstreiter | G. Böhm | G. Tränkle | G. Weimann

Sharp-line photoluminescence of excitons localized at GaAs/AlGaAs quantum well inhomogeneities

Appl. Phys. Lett. 64, (24), 3320-3322 (1994)

K. Brunner | G. Abstreiter | G. Böhm | G. Tränkle | G. Weimann

Single-Particle Excitations in Quasi-Zero- and Quasi-One-Dimensional Electron Systems

Phys. Rev. Lett. 73, (22), 3022-3025 (1994)

Condensation of Indirect Excitons in Coupled AlAs/GaAs Quantum Wells

J. de Physique IV, Vol. 3 ,167-170 (1993).
(Proc. of the 3rd Int. Conf. on Optics of Excitons in Confined Systems, OECS, Montpellier, Aug. 30 - Sept. 2, 1993)

L. V. Butov | A. Zrenner | G. Abstreiter | G. Böhm | G. Weimann

Electric field induced ?-? transition in GaAs-AlAs coupled quantum well structures

J. de Physique IV, Vol. 3, 229-232 (1993). (Proc. of the 3rd Int. Conf. on Optics of Excitons in Confined Systems, OECS, Montpellier, Aug. 30 - Sept. 2, 1993)

M. Hagn | A. Zrenner | G. Böhm | G. Weimann

Photoluminescence from GaAs/AlGaAs quantum wires and quantum dots

J. de Physique IV, Vol. 3, 107-114 (1993).
(Proc. of the 3rd Int. Conf. on Optics of Excitons-Confined Systems, OECS, Montpellier, Aug. 30 - Sept. 2, 1993)

Photoluminescence lineshape of narrow n-type modulation-doped quantum wells

Semicond. Sci. Technol. 8, 88-91 (1993)

R. Küchler | G. Abstreiter | G. Böhm | G. Weimann

Role of interface optical phonons in cooling hot carriers in GaAs-AlAs quantum wells

Phys. Rev. B 47 (12), 7630-7633 (1993)

D. Y. Oberli | G. Böhm | G. Weimann

Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs wires, dots and antidots

G. Weimann
Semicond. Sci. Technol. 8, 617-621 (1993)

Douple wavelength selective GaAs/AlGaAs infrared detector device

Appl. Phys. Lett. 60, (16), 2011-2013 (1992)

Indirect excitons in coupled quantum well structures

J.P. Harbison
Surface Science, 263, 496-501 (1992)

Luminescence Properties of GaAs Quantum Wells, Wires, Dots and Antidots

Optical Phenomena in Semiconductor Structures of Reduced Dimensions, Yountville, CA, USA, July 27-31, 1992. Eds.: D. J. Lockwood and A. Pinczuk Kluwer Academic Publishers, Dordrecht 1993. 327-335. (NATO ASI Ser.: E; 248).

Observation of Interface Plasmon Modes in (GaAl)As Heterostructures by Raman Spectroscopy

Proc. of 21th Int. Conf. on the Physics of Semiconductors, Beijing, China, August 10-14, (1992). Eds.:Ping Jiang and Hou-Zhi Zheng.World Scientific,Singapore 1992.Vol. 1.769-772.

M. Haines | T. Egeler | G. Abstreiter | G. Böhm | G. Weimann

Optical characterization of GaAs/AlGaAs nanostructures fabricated by focussed laser beam induced thermal interdiffusion

Surface Science 267, 218-222 (1992)

K. Brunner | G. Abstreiter | M. Walther | G. Böhm | G. Tränkle

Photoluminescence from a Single GaAs/AlGaAs Quantum Dot

Phys. Rev. Lett. 69, (22), 3216-3219 (1992)

Spatially direct and indirect optical transitions in GaAs/AlGaAs nanostructures of different dimensionalities

Proc. of 21th Int. Conf. on the Physics of Semiconductors, Beijing, China, August 10-14, (1992). Eds.: Ping Jiang and Hou-Zhi Zheng. World Scientific, Singapore 1992. Vol. 2. 1104-1107.

Spatially direct and indirect optical transitions in shallow etched GaAs/AlGaAs quantum wires

G. Weimann
Surface Science 263, 536-540 (1992)

Integrated wavelength-selective GaAs/AlGaAs multi-quantum-well detectors

Semicond. Sci. Technol. 6, C128-129 (1991)

Optical Properties of Type I and Type II GaAs/AlGaAs Nanostructures

Physics of Nanostructures, 301-308, Proc. of SUSSP38, St. Andrews, July-August 1991,
Eds. J.H. Davies and A.R. Long

News at the WSI

01 Apr 2013

Prof. Dr. Jonathan J. Finley new head of chair E24 - Prof. Dr. Gerhard Abstreiter new director of TUM-IAS more

07 Jan 2013

Bavarian Academy of Sciences awards Robert-Sauer prize to Dr. Ulrich Rant more

29 Oct 2012

Anouncement: A scientific symposium in memory of Professor Dr. Frederick Koch on November 23. more

25 Sep 2012

ERC Grant for Prof. Alexander Holleitner (WSI and Physik-Department, TUM) more

14 Sep 2012

Best Student paper award for Tobias Gruendl more