Martin Hetzl

 
Room: S106
Category: Doctoral Candidates
Phone: 11314
Email: Martin.Hetzl(at)wsi.tum.de

Nano-structured wide-bandgap semiconductor hybrids for optoelectronics and quantum information processing

 

Techniques:

  • Growth of group-III nitrides and group-II oxides by plasma-assisted molecular beam epitaxy
  • Homo- and heteroepitaxial selective area growth of GaN/AlGaN nanowire arrays on various substrates (silicon, diamond, sapphire, GaN, AlN)
  • µ-photoluminescence spectroscopy
  • Conductive atomic force microscopy (cAFM) and Kelvin Probe Force microscopy (KPFM)
  • µ-Raman spectroscopy
  • Scanning electron microscopy
  • High resolution X-ray diffraction

 

Research fields:

  • New concepts for nano-structured light sources emitting in the UV spectral range
  • Charge state control of point defects in diamond for quantum information processing

 

 

Publications

Contact morphology and revisited photocurrent dynamics in monolayer MoS2

Nature 2D Materials and Applications 1, 40 (2017). 

E. Parzinger | M. Hetzl | U. Wurstbauer | A. Holleitner

Online Reference

Homoepitaxial growth of high quality (111)-oriented single crystalline diamond

Diam. Relat. Mater. 72, 41 - 46 (2017)

C. J. Widmann | M. Hetzl | S. Drieschner | C. E. Nebel

Online Reference

Polarity Control of Heteroepitaxial GaN Nanowires on Diamond

Nano Lett. 17, 3582-3590 (2017)

M. Hetzl | M. Kraut | T. Hoffmann | M. Stutzmann

Online Reference

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires

Nanoscale 9, 7179-7188 (2017)

M. Hetzl | J. Winnerl | L. Francaviglia | M. Kraut | M. Doblinger | S. Matich | A. Fontcuberta i Morral | M. Stutzmann

Online Reference

GaN nanowires on diamond

Mat. Sci. Semicon. Proc. 48, 65-78 (2016)

M. Hetzl | F. Schuster | A. Winnerl | S. Weiszer | M. Stutzmann

Online Reference

Strain-Induced Band Gap Engineering in Selectively Grown GaN–(Al,Ga)N Core–Shell Nanowire Heterostructures

Nano Lett. 16, 7098 (2016)

M. Hetzl | M. Kraut | J. Winnerl | L. Francaviglia | M. Döblinger | S. Matich | A. Fontcuberta i Morral | M. Stutzmann

Online Reference

Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

J. Appl. Phys. 117, 044307 (2015)

F. Schuster | A. Winnerl | S. Weiszer | M. Hetzl | J. A. Garrido | M. Stutzmann

Online Reference

Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

J. Appl. Phys. 118, 154303 (2015)

F. Schuster | M. Hetzl | S. Weiszer | M. Wolfer | H. Kato | C. E. Nebel | J. A. Garrido | M. Stutzmann

Online Reference

Position-Controlled Growth of GaN Nanowires and Nanotubes on Diamond by Molecular Beam Epitaxy

Nano Lett. 15, 1773 (2015)

F. Schuster | M. Hetzl | S. Weiszer | J. A. Garrido | M. de la Mata | C. Magen | J. Arbiol | M. Stutzmann

Online Reference

Heteroepitaxial ZnO Films on Diamond: Optoelectronic Properties and the Role of Interface Polarity

J. Appl. Phys. 115, 213508 (2014)

F. Schuster | M. Hetzl | C. Magén | J. Arbiol | J. A. Garrido | M. Stutzmann

Online Reference

Influence of substrate material, orientation, and surface termination on GaN nanowire growth

J. Appl. Phys. 116, 054301 (2014)

F. Schuster | S. Weiszer | M. Hetzl | A. Winnerl | J. A. Garrido | M. Stutzmann

Online Reference

TUM Technische Universität München TUM Technische Universität München Physik Department Elektrotechnik und Informationstechnik TUM Technische Universität München
 

Events & News

17 Jan 2018

ERC Consolidator Grant for Gregor Koblmüller   more

10 Aug 2017

Best Poster Awards for Ganpath Veerabathran and Alexander Andrejew at iNOW 2017   more

27 Jun 2017

Best Poster Award at Nanowire Week for Jochen Bissinger   more

15 Mar 2017

Dr. Kai Müller admitted to the “Junges Kolleg” of the Bavarian Academy of Sciences   more

27 Feb 2017

Two-photon pulses from a single two-level system   more

Seminars

January 26, 2018

Reliability of hexagonal boron nitride dielectric stacks for CMOS applications   more

January 23, 2018

Helical states, spin-orbit coupling, and phase-coherent transport in InAs nanowires   more

January 16, 2018

New insights into novel (and conventional) materials using polarization-sensitive infrared magneto-spectroscopy   more