Dr. John Howgate

Room: S203
Category: Scientific Staff
Phone: 11584
Email: John.Howgate(at)wsi.tum.de


We investigate the interface between gallium nitride wide bandgap semiconductor heterostructures and (bio)molecular systems on their surfaces for biosensing, bioelectronics, and photoelectric applications, with a large emphasis on the processes arising from high energy ionizing irradiation, including heterostructure photoelectric gain mechanisms.


Organic Functionalization of 3C-SiC Surfaces

ACS Appl. Mater. Interfaces, 5 (4), pp 1393–1399 (2013)

S. Schoell | M. Sachsenhauser | A. Oliveros | J. Howgate | M. Stutzmann | M. S. Brandt | C. Frewin | S. Saddow | I. D. Sharp

Online Reference

In vitro bio-functionality of gallium nitride sensors for radiation biophysics

Biochemical and Biophysical Research Communications 424 2 348-353 (2012)

M. Hofstetter | J. Howgate | M. Schmid | S. Schoell | M. Sachsenhauser | D. Adigüzel | M. Stutzmann | I. D. Sharp | S. Thalhammer

Online Reference

Ultrahigh gain AlGaN/GaN high energy radiation detectors

Physica Status Solidi (a) Applications and Materials Science 209 8 1562-1567 (2012)

Article Featured on Front Cover

J. Howgate | M. Hofstetter | S. Schoell | M. Schmid | S. Schäfer | I. Zizak | V. Hable | C. Greubel | G. Dollinger | S. Thalhammer | M. Stutzmann | I. D. Sharp

Online Reference

Development and evaluation of gallium nitride-based thin films for x-ray dosimetry

Physics in Medicine and Biology 56 3215 (2011) 

M. Hofstetter | J. Howgate | I. D. Sharp | M. Stutzmann | S. Thalhammer

Online Reference

Electrical passivation and chemical functionalization of SiC surfaces by chlorine termination

Applied Physics Letters 98, 182106 (2011)

S. Schoell | J. Howgate | M. Hoeb | M. Auernhammer | J. A. Garrido | M. Stutzmann | I. D. Sharp

Online Reference

Strahlenbiophysik, Strahleneffekte, Dosimeter oder Biosensor?

Labor&More 4.11 p52-54 (2011)

M. Hofstetter | J. Howgate | I. D. Sharp | M. Schmid | M. Stutzmann | S. Thalhammer

Low-frequency noise in diamond solution-gated field effect transistors

Applied Physics Letters 97, 093504 (2010)

M. Hauf | L. Hess | J. Howgate | M. Dankerl | M. Stutzmann | J. A. Garrido

Online Reference

Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates

Advanced Materials 22, 2632 (2010)

J. Howgate | S. Schoell | M. Hoeb | W. Steins | B. Baur | S. Hertrich | B. Nickel | I. D. Sharp | M. Stutzmann | M. Eickhoff

Online Reference

Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices

Applied Physics Letters 96, 092110 (2010)

M. Hofstetter | J. Howgate | I. D. Sharp | M. Funk | M. Stutzmann | H. Paretzke | S. Thalhammer

Online Reference

Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage

Sensors and Actuators B: Chemical 142 1 304-307 (2009)

A. Encabo | J. Howgate | M. Stutzmann | M. Eickhoff | M. A. Sánchez-García

Online Reference

Catalytic activity of enzymes immobilized on AlGaN/GaN solution gate field-effect transistors

Applied Physics Letters 89 18 183901 (2006)

B. Baur | J. Howgate | H. G. vonRibbeck | Y. Gawlina | V. Bandalo | G. Steinhoff | M. Stutzmann | M. Eickhoff

Online Reference

TUM Technische Universität München TUM Technische Universität München Physik Department Elektrotechnik und Informationstechnik TUM Technische Universität München

Events & News

17 Jan 2018

ERC Consolidator Grant for Gregor Koblmüller   more

10 Aug 2017

Best Poster Awards for Ganpath Veerabathran and Alexander Andrejew at iNOW 2017   more

27 Jun 2017

Best Poster Award at Nanowire Week for Jochen Bissinger   more

15 Mar 2017

Dr. Kai Müller admitted to the “Junges Kolleg” of the Bavarian Academy of Sciences   more

27 Feb 2017

Two-photon pulses from a single two-level system   more


January 26, 2018

Reliability of hexagonal boron nitride dielectric stacks for CMOS applications   more

January 23, 2018

Helical states, spin-orbit coupling, and phase-coherent transport in InAs nanowires   more

January 16, 2018

New insights into novel (and conventional) materials using polarization-sensitive infrared magneto-spectroscopy   more