Publications
Breakdown quenching in high electron mobility transistor by using body contact
IEEE Transaction on Electron Dev. ED48 (10), 2188-2191 (2001)
A. Sleiman | A. Di Carlo | P. Lugli | G. Zandler
Explaining the dependences of the hole and electron mobilities in Si inversion layers
IEEE Trans. on Electron Dev. 47 (4), 718-724 (2000)
A. Pirovano | A. L. Lacaita | G. Zandler | R. Oberhuber
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Monte Carlo Study of the Dynamic Breakdown Effects in HEMT's
IEEE Electron Device Letters 21 (4), 149-151 (2000)
A. D. Carlo | L. Rossi | P. Lugli | G. Zandler | G. Meneghesso | M. Jackson | E. Zanoni
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Experimental and theoretical studies of near-breakdown phenomena in heterostructure FET
in: Proceedings GaAs-99, München (1999), pp 88
A. Sleimann | L. Rossi | A. D. Carlo | L. Tocca | A. Bonfiglio | M. Brunori | P. Lugli | G. Zandler | G. Meneghesso | E. Zanoni | C. Canali | A. Cetronio | M. Lanzieri | M. Peroni
Explaining the dependencies of the hole and electron mobilities in Si MOSFET's inversion layers
IEDM Tech. Dig. 1999, 527 (1999)
A. Pirovano | A. L. Lacaita | G. Zandler | R. Oberhuber
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Impact of piezo- and pyroelectric fields onto transport properties and device performance in III-nitride heterostructure devices
in: Proc. of the 24th Int. Conf. on the Physics of Semiconductors, 1998, Jerusalem, Israel, Ed. D. Gershoni, World Scientific (1999), pp 1315
G. Zandler | R. Oberhuber | F. Compagnone | P. Vogl
Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMT´s
Physica B 272, 558-661 (1999)
G. Zandler | L. Rossi | A. D. Carlo | L. Tocca | A. Bonfiglio | M. Brunori | P. Lugli | G. Meneghesso | R. Zanoni
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A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs
Semicond. Science Technol. 13, 858 - 863 (1998)
A. D. Carlo | P. Lugli | C. Canali | R. Malik | M. Manfredi | A. Neviani | E. Zanoni | G. Zandler
Cellular automata studies of vertical silicon devices
VLSI DESIGN 8 (1-4), 111 - 115 (1998)
M. Saraniti | G. Zandler | G. Formicone | S. Goodnick
Coherent THz-plasmons in AlGaAs/GaAs heterostructures
Technical Digest., International Quantum Electronics Conference, Conference Edition, 1998 Technical Digest Series, Vol.7 (IEEE Cat. No.98CH36236), Opt. Soc. America, Washington, DC, USA, 1998, p.151-2
W. Fischler | R. Bratschitsch | R. A. Höpfel | G. Zandler | K. Unterrainer
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III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications
in: Advances in Computational Materials Science - II 61, 71-75 (1998), Ed. by V. Fiorentini and F. Meloni, Società Italiana di Fisica, Editrice Compositori, Bologna, Italy (1998)
G. Zandler | J. A. Majewski | M. Städele | P. Vogl | F. Compagnone
III-Nitrides for high frequency high power devices: Perspectives of a novel material class for modern device applications
in: Conference Proceedings Vol. 61 Advances in Computational Materials Science-II, (SIF, Bologna, 1998), pp 71
G. Zandler | J. A. Majewski | M. Staedele | P. Vogl | F. Compagnone
Mobility enhancement of two-dimensional holes in strained Si/SiGe MOSFETs
in: Proc. of the 28th European Solid State Device Research Conference, 8-10 Sept. 1998, Bordeaux, France, Eds.: A. Touboul, Y. Danto, J.-P. Klein and H. Grünbacher, Edition Frontieres, 75004 Paris - France, (1998), pp. 524 - 527
R. Oberhuber | G. Zandler | P. Vogl
Mobilty of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors
Appl. Phys. Lett. 73(6), 818-820 (1998)
R. Oberhuber | G. Zandler | P. Vogl
Stability and band offsets of AlN/GaN heterostructures: Impact on device performance
Semicond. Sci. Technol. 13, A90 (1998)
J. A. Majewski | G. Zandler | P. Vogl
Stability and band offsets of AlN/GaN heterostructures: Impact on device performance
Semicond. Science Technol. 13 (8A), A90 - A92 (1998)
J. A. Majewski | G. Zandler | P. Vogl
Coherent THz Plasmons in GaAs: Transition from pure plasmons to coupled plasmon-phonon modes
Phys. Stat. Sol. (b) 204, 64 - 66 (1997)
R. Bratschitsch | W. Fischler | R. A. Höpfel | G. Zandler
Prospects of Ga/In/Al-N nanometer devices: Electronic structure, scattering rates, and high field transport
Phys. Stat. Sol. (b) 204, 133 - 135 (1997)
G. Zandler | J. Majewski | M. Städele | P. Vogl | F. Compagnone
Cellular automata for device simulation - concepts and applications
in: Proc. of the 1996 Int. Conf. on Simulation of Semiconductor Processes and Devices, Tokyo, Business Center for Academic Societies Japan, Tokyo 1996, pp 39
G. Zandler | M. Saraniti | A. Rein | P. Vogl
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Experimental and Monte Carlo analysis of impact-ionization in AlGaAs/GaAs HBT's
IEEE Trans. on Elec. Dev. 43, 1769-1777 (1996)
C. Canali | P. Pavan | A. D. Carlo | P. Lugli | R. Malik | M. Manfredi | A. Neviani | L. Vendrame | E. Zanoni | G. Zandler
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HEMT models and simulations
in: Pseudomorphic HEMT Technology and Applications, ed. by R. L. Ross, S. .P. Svensson, and P. Lugli, Kluwer Academic Publisher, Dordrecht, The Netherlands (1996) pp 141
P. Lugli | M. Paciotti | E. Calleja | E. Munoz | J. L. Sanchez-Rojas | F. Dessene | R. Fauquembergue | J. L. Thobel | G. Zandler
Microscopic analysis of intrinsic noise in semiconductor devices by the cellular automaton method
in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors, ed. by K. Hess, J. P. Leburton, and U. Ravaioli. Plenum Publishing Coop., New York - London 1996, pp 497
A. Rein | G. Zandler | M. Saraniti | P. Vogl
Oscillatory transport of electrons in GaAs surface - space - charge fields
in: Proc. of the Ninth Int. Conf. on Hot Carriers in Semiconductors, ed. by K. Hess, J. P. Leburton, and U. Ravaioli, Plenum Publ. Co., New York-London, 1996, pp 61
W. Fischler | R. A. Höpfel | G. Zandler
Ultrafast reflectivity changes in photoexcited GaAs Schottky-diodes
Appl. Phys. Lett. 68, 2778-2780 (1996)
W. Fischler | P. Buchberger | R. A. Höpfel | G. Zandler
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Mikroskopische Analyse des Rauschverhaltens in Bauelementen mit der Methode Zellulärer Automaten
Verhandlg. der Dt. Phys. Ges. (VI) 30, 1306, Berlin (1995)
A. Rein | G. Zandler | M. Saraniti | P. Vogl
Cellular automaton simulations of planar doped barrier field effect transistor in silicon
in: Proc. of Int. Conf. on Computational Electronics, ed. by S.M. Goodnick, Corvallis (OR) (1994) pp 7
A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl
Impact ionization and associated light emission phenomena in GaAs devices: A Monte Carlo study
in: Proc. 20th Int. Symp. on GaAs and Related Compounds, Ed. H. S. Rupprecht and G. Weimann, Institute of Physics Publishing Ltd., Bristol, Inst. Phys. Conf. Ser. No. 136, 715 (1994)
G. Zandler | A. Di Carlo | P. Vogl | P. Lugli
Monte Carlo simulation of minority carrier transport and light emission phenomena in GaAs devices
Semicond. Sci. Technol. 9, 666 (1994)
G. Zandler | A. Di Carlo | P. Vogl | P. Lugli
Nanometer-resolved photocurrent and local minority carrier transport in GaAs P-N junctions
Proc. of 22nd Int. Conf. on the Physics of Semiconductors, Vancouver, Canada, August 15-19, (1994). Ed.: D. J. Lockwood. World Scientific, Singapore 1995. Vol. 1. 249-252.
G. Zandler | G. Kolb | K. Karraï | G. Abstreiter | P. Vogl
Transport simulations of ultrashort planar doped barrier field effect transistors
in: Proc. 24th European Solid State Device Research Conference, Ed.: C. Hill and P. Ashburn, Edition Frontieres, Gif-sur-Yvette Cedex - France, 1994, pp 775
A. Rein | G. Zandler | M. Saraniti | P. Lugli | P. Vogl
Can cellular automata methods compete with Monte Carlo semiconductor device simulations?
Proc. 23rd European Solid State Device Research Conference 1993, Eds.: J. Borel, P. Gentil, J. P. Noblanc, A. Nouailhat, M. Verdone, Edition Frontieres, Gif-sur-Yvette Cedex, France, p. 21 (1993)
G. Zandler | A. Rein | M. Saraniti | P. Vogl | P. Lugli