Prof. Dr. M.-C. Amann

Continuously Tunable, Polarization Stable SWG MEMS VCSELs at 1.55 µm

IEEE Photonics Technology Letters, Vol. PP, No. 99, pp. 1, early access, 2013.

High-Speed 1550 nm VCSEL Data Transmission Link Employing 25 GBd 4-PAM Modulation and Hard Decision Forward Error Correction

Journal of Lightwave Technology, vol. 31, no. 4, pp. 689-695, Feb. 2013.

InP-Based Type-II Quantum Well Lasers and LEDs

Invited Paper: IEEE Journal of Selected Topics in Quantum Electronics

Recent results on long-wavelength VCSELs: Device structures, performance and applications

IEEE Photonics Conference (IPC), 2012

T. Gruendl | M. Mueller | C. Grasse | K. Vizbaras | M. C. Amann

Record Single-Mode, High-Power VCSELs by Inhibition of Spatial Hole Burning

Selected Topics in Quantum Electronics, IEEE Journal of, vol. PP, issue 99, p. 1, Feb 2013

Tweaking the Modal Properties of 1.3- Short-Cavity VCSEL—Simulation and Experiment

IEEE Photonics Technology Letters, vol. 25, no. 2, 140-143, Jan. 2013

M. Mueller | P. Debernardi | C. Grasse | T. Gruendl | M. C. Amann

1.3 µm short-cavity VCSELs enabling error-free transmission at 25 gbit/s over 25 km fibre link

Electronics Letters, vol. 48, no. 23, pp. 1487-1489, Nov. 2012

1.3um High-Power Short-Cavity VCSELs for High-Speed Applications

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 6 - 11 in San José, CA, USA (2012).

100 Gb/s single VCSEL data transmission link

OFC / NFOEC, March 4-8, 2012, Los Angeles, CA, USA

A Waveguide-Coupled On-Chip Single-Photon Source

Phys. Rev. X 2, 011014 (2012).

AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 µm grown by MOVPE on InP substrate

Journal of Crystal Growth, 2012 (doi = 10.1016/j.jcrysgro.2012.06.051)

AlGaInAsPSb-based High-Speed Short-Cavity VCSEL with single-mode Emission at 1.3µm grown by MOVPE on InP substrate

16th International Conference on Metal Organic Vapor Phase Epitaxy 2012, Busan (South Korea)

Broadband Purcell enhanced emission dynamics of quantum dots in linear photonic crystal waveguides

Journal of Applied Physics 112, 093520 (2012)

Detection of the Mass of Airborne Particles in an online Optical Sensor System by Correlation of Geometric and Inertial Filtering

Procedia Engineering, vol. 47 issue (26th European Conference on Solid-State Transducers, EUROSENSOR 2012), p. 1109-1112.

R. Schrobenhauser | R. Strzoda | M. Fleischer | M. C. Amann

Diameter dependent optical emission properties of InAs nanowires grown on Si

Appl. Phys. Lett. 101, 053103 (2012).

Energy Saving Strategies for VCSEL ONUs

OFC / NFOEC, March 4-8, 2012, Los Angeles, CA, USA

E. Wong | M. Mueller | P. I. Dias | C. A. Chan | M. C. Amann

Energy-efficiency of optical network units with vertical-cavity surface-emitting lasers

Optics Express, Vol. 20, Issue 14, pp. 14960-14970, June 2012

E. Wong | M. Mueller | M. P. I. Dias | C. A. Chan | M. C. Amann

Energy-efficient 1.3 µm short-cavity VCSELs for 30 Gb/s error-free optical links

23rd IEEE International Semiconductor Laser Conference (ISLC), 2012

Energy-Efficient High-Speed Short-Cavity VCSELs

Invited Paper: OFC / NFOEC, March 4-8, 2012, Los Angeles, CA, USA

M. C. Amann | E. Wong | M. Mueller

Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions

23^nd IEEE International Semiconductor Laser Conference (ISLC), San Diego (oral presentation)

GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 µm light emission grown on InP substrate

Journal of Crystal Growth, 2012 (doi = 10.1016/j.jcrysgro.2012.07.001)

GaInAs/GaAsSb-based type-II Micro-Cavity LED with 2-3µm light emission grown on InP substrate

16th International Conference on Metal Organic Vapor Phase Epitaxy 2012, Busan (South Korea)

GaSb- and InP-based devices for mid-infrared gas sensing

Invited Talk: International Workshop on Opportunities and Challenges in Mid-Infrared Laser-based Gas Sensing, Wroclaw, Poland

C. Grasse | K. Vizbaras | S. Sprengel | M. C. Amann

High composition homogeneity in In-rich InGaAs nanowire arrays on nanoimprinted SiO2/Si (111)

Appl. Phys. Lett. 101, 043116 (2012)

Highly sensitive laser-based sensor for nanoparticles in air using a dual-ring-mirror setup

Optics Letters (2012) vol. 37 issue 14 p. 2847-2849

R. Schrobenhauser | R. Strzoda | M. Fleischer | M. C. Amann

InP based type-II resonant cavity LEDs emitting up to 3.5 µm

27. DGKK Workshop, 6.-7.12.2012, Erlangen

InP-based 1.3 µm and 1.55 µm Short-Cavity VCSELs suitable for Telecom- and Datacom-Applications

Invited Paper: International Conference on Transparent Optical Networks (ICTON), July 1-5, Warwick, England, (2012)

M. Mueller | C. Grasse | M. C. Amann

InP-based 2.8-3.5 µm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Applied Physics Letters, vol. 101, No. 22, 221107, (2012)

Nanoparticle Detection in a Miniaturized Setup using Laser Beam Shaping and Dual Angle Information Provided by Fresnel Ring Lenses

Procedia Engineering, vol. 47 issue (26th European Conference on Solid-State Transducers, EUROSENSOR 2012), p. 1207-1210

R. Schrobenhauser | R. Strzoda | M. Fleischer | M. C. Amann

New standards in high-speed and tunable long wavelength VCSELs

Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 843203

T. Gruendl | M. Mueller | M. C. Amann

Nonlinear GaInAs/AlInAs/InP quantum cascade laser sources for wavelength generation in the 2.7-70 µm wavelength range

Proc. of SPIE Photonics West, vol. 8268, San Francisco, Ca, USA (2012) (invited talk)

Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers

Semiconductor Science and Technology, vol.27 (3), 032001, 2012

K. Vizbaras | M. C. Amann

Room-temperature type-I GaSb-based lasers in the 3.0 – 3.7 µm wavelength range

SPIE Photonics West 2012, San Francisco, California, 2012 (Invited talk)

Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation

Physica Status Solidi (c), Vol. 9, No. 2, pp. 298-301, (2012)

Terahertz quantum cascade laser sources based on Cherenkov Intra-cavity difference-frequency generation

Proc. of CLEO 2012, May 6-11, San Jose, CA, USA (2012)

Terahertz sources based on Cerenkov difference-frequency generation in quantum cascade lasers

Applied Physics Letters, vol. 100, No. 25, 251104, (2012)

Type-II InP-based lasers emitting at 2.55 µm

Applied Physics Letters, vol.100 (4), 041109, 2012

Type-II Quantum Wells for InP based mid-IR Devices

Mid-Infrared Optoelectronics: Materials and Devices, MIOMD-11, Sept. 2012, Chicago/Evanston

Winner of Best Student Paper Award 2012

T. Gruendl | C. Grasse | P. Wiecha | S. Sprengel | M. C. Amann

Type-II quantum wells on InP emitting up to 3.2µm

International Nano-Optoelectronics Workshop (iNow) 2012, Berkeley & Stanford, USA

Winner of "Best Poster Award 2012" (First Place)

Vertical Cavity Surface Emitting Laser Transmitters for Energy Efficient Broadband Access Networks

IEEE International Conference on Communications - Optical Networks and Systems, June 10-15, Ottawa, Canada, 2012.

E. Wong | M. Mueller | I. P. Dias | C. A. Chan | M. C. Amann

Voltage Spectroscopy and the Operating State of an Optically Injected Long Wavelength VCSEL

IEEE Photonics Technology Letters, vol. 24, no. 14, pp.1245-1247, July 2012

102 nm Continuous Single-Mode Tuning with a Surface Micro-Machined tunable VCSEL

VCSEL-Day, European Workshop on VCSELs (oral presentation), May 12-13, Toulouse, (2011)

10Gbit/s Direct Modulated Long-Wavelength VCSELs for Upstream Hybrid TDMA/WDM PON

Photonics Ireland 2011, September 7-9, Dublin, Ireland, (2011).

1550 nm High-Speed Short-Cavity VCSELs

IEEE Journal of Selected Topics in Quantum Electronics, Vol. 17, No. 5, pp. 1158-1166, Sept./Oct., 2011.

3.6 µm GaSb-based type-I lasers with quinternary barriers, operating at room temperature

IET Electronics Letters, vol. 47, No. 17, pp. 980-981, 2011

K. Vizbaras | M. C. Amann

40 Gbit/s modulation of 1550 nm VCSEL

Electronics Letters, Vol. 47, No. 4, pp. 270 - 271, Feb. 2011.

a-Ge and a-Si as dielectric mirror materials for long-wavelength optoelectronic devices: a comparative study

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2011).

S. Arafin | K. Klein | K. Vizbaras | M. C. Amann

Antimony-based tunable diode lasers for trace-gas sensing

Fire & Safety Group Magazine, FS-World Newsletter, Aug. 2010

S. Arafin | M. C. Amann

Broad gain bandwidth injectorless quantum-cascade lasers with a step well design

Appl. Phys. Lett. 98, 131113 (2011)

H. Li | S. Katz | G. Boehm | M. C. Amann

Broad gain injectorless quantum-cascade lasers with low threshold emitting around 8.6 µm

Asia Communications and Photonics Conference, November 13-16, Shanghai, China (2011).

H. Li | S. Katz | G. Boehm | M. C. Amann

Chirp Characterization of a VCSEL using the Fiber Transfer Function Method

15th Canadian Semiconductor Science and Technology Conference, August 15 -17, Vancouver BC, Canada, (2011).

Comparison of InP- and GaSb-based VCSELs emitting at 2.3 µm suitable for carbon monoxide detection

Journal of Crystal Growth 323, 442-445 (2011)

Comprehensive analysis of electrically- pumped GaSb-based VCSELs

Opt. Express, vol.19, no. 18, pp. 17267-17282 (2011)

Concepts and Realization of Widely Tunable InP VCSELs

International Nano-Optoelectronics Workshop (iNow) 2011, St. Petersburg & Würzburg, Russia & Germany

Winner of "Best Poster Award 2011" (First Place)

Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation

Journal of Crystal Growth 323 (2011) 480-483

Extending the spectral range of GaInAs/AlInAs/InP quantum cascade lasers by intracavity nonlinear frequency mixing

11^th International Conference on Intersubband Transitions in Quantum Wells (ITQW-2011), September 11-17, Badesi, Sardinia, (2011).

First 102 nm Ultra-Widely Tunable MEMS VCSEL Based on InP

Winner of Best Student Paper Award 2011 (First Place)

IEEE Photonics 2011 Conference (IPC11) - (formerly Photonics Society Annual Meeting), paper ThDD1, Arlington, Virginia (USA), Oct. 2011

GaAsSb:C / GaInAs:Si tunnel junctions with AlGaInAsSb:C grading for InP-based high-speed VCSELs

European Workshop on Metalorganic Vapor Phase Epitaxy, June 5-8, 2011, Wroclaw, Poland (EWMOVPE XIV)

C. Grasse | T. Gruendl | M. Mueller | R. Meyer | M. C. Amann

Gain-cavity tuning and non-radiative recombination in 2.6 µm GaInAsSb VCSELs

UK Semiconductors, Sheffield, UK (2011)

GaInAs/GaAsSb type-II quantum wells for up to 2.8µm light emission on InP substrate

26. DGKK Workshop, Stuttgart, Deutschland, 2011

GaSb and InP-based VCSELs at 2.3 µm emission wavelength for tuneable diode laser spectroscopy of carbon monoxide (Invited)

SPIE Photonics West 2011, San Francisco, CA, USA (Invited talk)

High Speed Modulation of a 1.55 µm MEMS-tunable VCSEL

CLEO 2011 - Conference on Lasers and Electro Optics, BALTIMORE CONVENTION CENTER, Baltimore, Maryland, USA (2011)

High-power 200-fs Kerr-lens mode-locked Yb:YAG thin-disk oscillator

Optics Letters, Doc. ID: 156488, Posted: 14.11.2011

High-Power BCB Encapsulated VCSELs based on InP

CLEO 2011 - Conference on Lasers and Electro Optics, BALTIMORE CONVENTION CENTER, Baltimore, Maryland, USA (2011)

InGaAs/AlInAs quantum cascade laser sources based on intracavity second harmonic generation in 2.6 - 3.6 micron range

Proc. of SPIE Photonics West, San Francisco, CA, USA, January, (2011) (invited talk)

Injectorless quantum cascade laser with two-phonon-resonance design using four alloys for emission wavelengths between 5 and 9 µm

Semicond. Sci. Technol. 26, 014018 (2011)

Injectorless quantum cascade lasers

Journal of Applied Physics, 109. 081101, pp. 1-9, (focused review article), (2011)

S. Katz | A. Vizbaras | R. Meyer | M. C. Amann

InP-based quantum cascade lasers with transversely integrated giant nonlinearity for wavelength generation in the 2.6 µm - 70 µm range by intracavity nonlinear frequency mixing

Proc. of the 40^th Freiburg Infrared Colloquium, February 16 -17, Freibug, Germany, (2011).

Long-wavelength VCSELs for sensing applications

Invited Talk: SPIE Photonics West (2012), paper 8276-9, The Moscone Center, San Francisco, California (USA)

Low-Threshold 3 µm GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64°C

International Conference on Indium Phosphide and Related Materials (IPRM), Berlin, Germany, 2011.

New Standards in High-Speed and Tunable Long Wavelength VCSELs

Invited Talk: SPIE Photonics Europe

Square Brussels Meeting Center (Belgium) - April 2012

T. Gruendl | M. Mueller | M. C. Amann

Nonresonant feeding of photonic crystal nanocavity modes by quantum dots

Journal of Applied Physics 109, 102404 (2011)

Novel concept of a monolithically integrated MEMS VCSEL

IPRM 2011 - International Conference on Indium Phosphide and Related Materials, Berlin, Germany (2011)

Quantum cascade lasers with integrated nonlinearity for difference-frequency (THz) and second harmonic (near infrared) generation

Villa Conference on Interactions Among Nanostructures (VCIAN), April 21-25, Las Vegas, Nevada USA, (2011) (invited talk).

A. Vizbaras | C. Grasse | R. W. Adams | M. A. Belkin | M. C. Amann

Room-temperature "lambda" ~ 2.7 µm quantum cascade laser sources based on intracavity second-harmonic generation

IEEE Journal of Quantum Electronics, Vol. 47, No. 5, pp. 691-697, (2011)

Room-temperature GaSb-based quinternary type-I quantum-well lasers for the wavelength range from 3.3 to 3.6µm

European Semiconductor Laser Workshop 2011, Lausanne, Switzerland

C. Grasse | K. Vizbaras | A. Andrejew | S. Sprengel | M. C. Amann

Semiconductor Lasers for the Near- and Far-Infrared: Materials and Device Concepts

Invited Talk: Global COE International Symposium

VCSELs and Nanophotonics Innovation for Green ICT (The 63rd SEIKEN Symposium, Tokyo Institute of Technology) - December 2011

T. Gruendl | M. Mueller | K. Vizbaras | A. Vizbaras | M. C. Amann

Short-wavelength injectorless quantum cascade laser based on second-harmonic generation

International Nano-Optoelectronics Workshop (iNow) 2011, St. Petersburg & Würzburg, Russia & Germany

Winner of "Best Poster Award 2011" (Third Place)

Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation

International Symposium on Compound Semiconductors (ISCS-2011), May 22-26, Berlin, Germany, (2011)

Single mode and tunable GaSb-based VCSELs for wavelengths above 2 µm

SPIE Photonics West 2011, San Francisco, CA, USA (Invited talk)

M. C. Amann | S. Arafin | K. Vizbaras

State-of-the-Art and Perspectives for Long-Wavelength High-Speed VCSELs

International Conference on Transparent Optical Networks (ICTON), June 26-30, Stockholm, Sweden, (2011).

Invited Paper

M. Mueller | M. C. Amann

Surface Micromachined MEMS-tunable VCSELs with wide and fast wavelength tuning

Electronic Letters, Vol. 47, Issue 22, p. 1243-1244 (Oct. 2011)

Surface micromachined tunable 1.55µm-VCSEL with 102nm continous single-mode tuning

Optics Express 17336, vol. 19, No. 18, Aug. 2011

Terahertz quantum cascade sources based on intra-cavity frequency mixing in passive nonlinear sections

Proc. of CLEO 2011, May 1-6, Baltimore, Maryland, USA, (2011)

Terahertz sources based on intracavity frequency mixing in mid-infrared quantum cascade lasers with passive nonlinear sections

Applied Physics Letters, 98, 151114, (2011)

The frequency modulation response of vertical-cavity surface-emitting lasers: experiment and theory

Journal of Selected Topics of Quantum Electronics 17 1584-1593, 2011

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

THz Quantum cascade sources based on intra-cavity frequency mixing in passive nonlinear sections

36^th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-2011), October 2-7, Houston, TX, USA (2011).

2nd place in best student paper competition

Transverse Mode Characteristics of GaSb-based VCSELs with Buried Tunnel Junctions

J. Sel. Top. Quantum Electron. 17(4) (2011)

S. Arafin | A. Bachmann | M. C. Amann

Ultra-Low resistive InAs/GaSb tunnel junctions

Semiconductor Science and Technology 26, 075021, 2011

K. Vizbaras | M. Toerpe | S. Arafin | M. C. Amann

Up to 3 µm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells

Applied Physics Letters, vol. 99 (23), 220911, 2011

S. Sprengel | C. Grasse | K. Vizbaras | T. Gruendl | M. C. Amann

Vertical-Cavity Surface-Emitting Laser Light- Current Characteristic at Constant Internal Temperature

IEEE Photonics Technology Letters 23 1295-1297, 2011

Wavelength dependence of the performance of GaInAsSb/GaSb mid-infrared lasers

UK Semiconductors, Sheffield, UK, (2011) (poster)

Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs

European Semiconductor Laser Workshop 2011, Lausanne, Switzerland

Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs

Oral. presentation - European Semiconductor Laser Workshop ESLW 2011, Lausanne (Switzerland), Sep. 2011

2.34 µm electrically-pumped VECSEL with buried tunnel junction

SPIE Photonics Europe, Brussels, Belgium (2010)

1.55 µm High-Speed VCSELs Enabling Error-Free Fiber-Transmission up to 25 Gbit/s

Proceedings of International Semiconductor Laser Conference (ISLC), September 26-30, Kyoto, (2010).

BCB Encapsulated VCSEL Based on InP Suitable for MEMS Technology

VCSEL Day 2010, European workshop organized by SUBTUNE (Oral Presentation)

Location: IEIIT CNR, Politecnico di Torino, Italy

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Compact VCSEL-based CO2 and H2O sensor with inherent wavelength calibration for safety and air-quality applications

Conference on Lasers and Electro Optics (CLEO), San Jose, USA, JThB3

Comparison of plasma-effect in different InP-based VCSELs

Conference on Lasers and Electro Optics (CLEO), San Jose, USA, CMO4

Coupled carrier-field Monte-Carlo analysis of mid-IR quantum cascade lasers

14^th international workshop on Computational Electronics (IWCE), Pisa, Italy (2010)

Design and realization of low density InAs quantum dots on AlGaInAs lattice matched to InP(001)

Journal of Crystal Growth 312, 2300 (2010)

Empirical modeling of the refractive index of (AlGaIn)As lattice matched to InP

Semiconductor Science and Technology 25 (2010) 045018

Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation

ICMBE Conference, Berlin, 2010

Evaluation of injectorless quantum cascade lasers byc ombining XRD- and laser-characterisation

Journal of Crystal Growth, Volume 323, Issue 1, 15 May 2011, Pages 480–483

GaSb-based wavelength-tunable single-mode VCSELs for the 2-3 µm wavelength range

10th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, (MIOMD), Shanghai, China (2010) (invited).

M. C. Amann | S. Arafin | K. Vizbaras

Growth and Characterisation of GaAsSb:C/GaInAs:Si Tunnel Junctions for InP-based Long-Wavelength VCSELs

25. DGKK-Workshop, Aachen 2010

High Efficiency Injectorless Quantum Cascade Lasers Emitting at 8.8 µm With 2-W Peak Pulsed Power per Facet at Room Temperature

IEEE Photonics Technology Letters 22 (24), 1811-1813 (2010).

H. Li | S. Katz | A. Vizbaras | G. Boehm | M. C. Amann

High-Speed and High-Power Vertical-Cavity Surface-Emitting Lasers based on InP suitable for Telecommunication and Gas Sensing

SPIE Remote Sensing, Security and Defence 2010, paper number 7828-6, Toulouse, Frankreich

Oral presentation

High-Speed High-Power VCSELs based on InP

International Nano-Optoelectronics Workshop (iNow) 2010, Peking & Changchun, China

Winner of "Best Poster Award 2010" (First Place)

In-situ characterization of latent images in irridiated e-beam resists using novel atomic force microscope technique

Frühjahrstagung der Deutschen Physikalischen Gesellschaft & Raith User-Meeting

In-situ direct visualization of irradiated e-beam patterns on unprocessed resists using atomic force microscopy

J. Vac. Sci. Technol. B 28, 802 (2010).

Injectorless quantum cascade lasers for room-temperature short-wavelength emission by efficient second-harmonic generation

Proceedings of the 23^rd IEEE Photonics Society Annual Meeting, Denver, CO, USA pp. 367-368, (2010)

InP-based High-Speed VCSELs for Optical Interconnects

Workshop of 22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan (2010).

Invited Paper

S. Arafin | M. Mueller | M. C. Amann

InP-based Highspeed-VCSELs with Novel Short-Cavity Design for Application in Access Networks

12th International Conference on Transparent Optical Networks (ICTON), June 27 - July 1, Munich, (2010).

Invited Paper

M. C. Amann | M. Mueller

Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 µm

22nd IEEE International Semiconductor Laser Conference, Kyoto, Japan (2010).

S. Arafin | A. Bachmann | K. Vizbaras | M. C. Amann

Large-Area Single-Mode GaSb-based VCSELs using an Inverted Surface Relief

The 23rd Annual Meeting of the IEEE Photonics Society (formerly LEOS), Denver, CO, USA (2010).

Laser Spectroscopic Oxygen Sensor Using Diffuse Reflector-based Optical Cell and Advanced Signal Processing

Applied Physics B: Lasers and Optics 100 417-425 (2010)

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Long-Wavelength BTJ-VCSEL with High-Contrast Grating

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 16 - 21 in San José (2010).

Long-Wavelength High-Contrast Grating Vertical-Cavity Surface-Emitting Laser

IEEE Photonics Journal, vol. 2, no. 3, pp. 415-422, June 2010

Low-level and ultralow-volume hollow waveguide based carbon monoxide sensor

Optics Letters 35, 3577-3579 (2010)

J. Chen | A. Hangauer | R. Strzoda | M. Fleischer | M. C. Amann

Low-Parasitics 1.55 µm VCSELs with Modulation Bandwidths beyond 17 GHz

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 16 - 21 in San José (2010).

M. Mueller | W. Hofmann | M. Horn | G. Boehm | M. C. Amann

MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm

Journal of Crystal Growth doi:10.1016/j.jcrysgro.2010.11.139

MBE growth of low threshold GaSb-based lasers with emission wavelengths in the range of 2.5 to 2.7 µm

16th International Conference on Molecular Beam Epitaxy MBE 2010 (Contributed talk)

Mutual coupling of two semiconductor quantum dots via an optical nanocavity

Physical Review B 82, 075305 (2010)

Nonlinear gain behavior in injectorless quantum cascade lasers

Optical Engineering, 49, 111107 (2010)

Recent Progress on Electrically-Pumped Single-Mode GaSb-based VCSELs Emitting around 2.3 µm and 2.6 µm

International workshop on opportunities and challenges in mid-infrared laser-based gas sensing MIRSENS 2010, Wroclaw, Poland.

K. Vizbaras | A. Bachmann | S. Arafin | M. C. Amann

Resolution limits of laser spectroscopic absorption measurements with hollow glass waveguides

Applied Optics 49, 5254-5261 (2010)

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Sensitivity Limits for Near- Infrared Gas Sensing with Suspended-core PCFs directly coupled with VCSELs

Conference on Lasers and Electro Optics (CLEO), San Jose, USA, JThB7

Small-Signal Analysis of High-Temperature Stable 1550nm High-Speed VCSELs

Proceedings of 6th Joint Symposium on Opto- and Microelectronic Devices and Circuits, October 4-7, Berlin, (2010).

Terahertz sources based on difference-frequency generation near exit facets in dual-wavelength mid-infrared quantum cascade lasers

CLEO/QELS: 2010, May 16-21, San Jose, California, USA (2010).

THz quantum cascade laser sources for room-temperature operation

The 40^th winter colloquium on the Physics of Quantum Electronics (PQE-2010), January 3-7, Snowbird, Utah, USA (invited talk) (2010).

Towards high-performance injectorless quantum cascade lasers

ACP 2010 (invited talk), Shanghai, China, December 8-12 (2010)

S. Katz | A. Vizbaras | M. C. Amann

Tunable diode laser spectroscopy with optimum wavelength scanning

Applied Physics B: Lasers and Optics 100 331-339 (2010)

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Tunable long wavelength MEMS VCSELs

SUBTUNE Workshop, Laserzentrum Nuremberg (oral presentation)

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Tuneable VCSEL aiming for the application in interconnects and short haul systems

Invited talk: SPIE Photonics West 2011, 22 - 27 January, The Moscone Center, San Francisco, California, USA

VCSEL-based Calibration-free Carbon Monoxide Sensor at 2.3 µm with in-line Reference Cell

Applied Physics B: Lasers and Optics 102 381-389, 2011

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Widely Tunable High-Speed Bulk-Micromachined Short-Wavelength MEMS-VCSEL

22^nd IEEE International Semiconductor Laser Conference (ISLC), Kyoto, Japan (oral presentation)

1.55 µm InP-based VCSEL with Enhanced Modulation Bandwidths > 10 GHz up to 85°C

Proceedings of Optical Fiber Communication Conference and Exposition (OFC) and The National Fiber Optic Engineers Conference (NFOEC), Marcj 22 - 26, San Diego, (2009).

W. Hofmann | M. Mueller | M. Ortsiefer | M. C. Amann

1.55 um InP-based Short-Cavity-VCSEL with Enhanced Modulation-Bandwidth of 15 GHz

35th European Conference on Optical Communication (ECOC), September 20-24, Vienna, (2009).

Invited Paper

M. Mueller | W. Hofmann | G. Boehm | M. C. Amann

1.55um VCSEL with Enhanced Modulation Bandwidth and Temperature Range

IEEE PHOTONICS TECHNOLOGY LETTERS; VOL. 20, NO. 11, FEBRUARY 2009

W. Hofmann | M. Mueller | G. Boehm | M. Ortsiefer | M. C. Amann

22-Gb/s Long Wavelength VCSELs

Optics Express, Vol. 17, Issue 20, pp. 17547-17554, (2009).

Al(In)As-(Ga)InAs strain-compensated active regions for injectorless quantum cascade lasers

J. Crystal Growth, 2009, 311, pp. 1932-1934

G. Boehm | S. Katz | R. Meyer | M. C. Amann

Analysis of Dynamic Tuning Effects in Vertical-Cavity Surface-Emitting Lasers

Proceedings of the Fifth Joint Symposium on Opto- & Microelectronic Devices and Circuits (SODC), Beijing, China. 28-31 (2009)

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Antimon assisted growth of InAs Quantum Dots

Deutscher MBE Workshop, Bochum, Germany (2009)

Buried tunnel junction mid-infrared GaSb VCSELs investigated using hydrostatic pressure

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2009).

CO and CH4 Sensing with Single Mode 2.3µm GaSb-Based VCSEL

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, (2009)

Concept of a single photon source based on InP for emission at 1.55 µm

International Conference on Nanomaterials and Nanosystems (NanoMats2009), Istanbul, Turkey (2009)

Concept of a Single Photon Source Based on InP for emission at 1.55 µm (Poster)

Nim/CeNS/SFB486 Winterschool 2009, Nanosystems and Sensors, 1.-7. March 2009

Continuous-Wave Electrically-Pumped GaSb-based VCSELs at ~ 2.6 µm Operating up to 50°C

The 22nd Annual Meeting of the IEEE Photonics Society (formerly LEOS), Belek-Antalya, Turkey, (2009)

S. Arafin | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Continuous-Wave Single-Mode Electrically -Pumped GaSb-based VCSELs at 2.5 µm

The 8th Pacific Rim Conference on Lasers and Electro-Optics (CLEO/Pacific Rim), Shanghai, China (2009).

S. Arafin | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Design and Technologies of High Speed MEMS-VCSEL Based on InP

VCSEL Day 2009, European Workshop organized by CHALMERS University of Technology, Gothenburg, Sweden

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Efficient and selective cavity-resonant excitation for single photon generation

New J. Phys. 11, 013031 (2009)

Electrical control of spontaneous emission and strong coupling for a single quantum dot

New Journal of Physics 11, 023034 (2009)

Electrically-pumped continuous-wave vertical-cavity surface-emitting lasers at ~ 2.6 µm

Applied Physics Letters 95 (2009), 131120 (1-3)

S. Arafin | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Fire Detection with a Compact, 2.3 µm VCSEL-Based Carbon Monoxide Sensor

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, (2009)

A. Hangauer | J. Chen | R. Strzoda | M. Fleischer | M. C. Amann

Gain peak–cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure

IET Optoelectron. Selected papers inspired by the Semiconductor and Integrated Optoelectronics (SIOE) Conference, Vol. 3, Issue 6, p. 305-309 (2009).

GaSb-Based VCSEL With Buried Tunnel Junction for Emission Around 2.3 µm

J. Sel. Top. Quantum Electron. 15(3) (2009)

A. Bachmann | K. Kashani-Shirazi | S. Arafin | M. C. Amann

Growth of low-density quantum dots emitting at telecommunication wavelengths

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2009).

High Power Injectorless Quantum Cascade Laser Structure in the 6.0 µm Wavelength Range

Proc. of CLEO, 2009, Baltimore

S. Katz | G. Boehm | M. C. Amann

High-performance injectorless quantum cascade laser emitting below 6 µm

Appl. Phys. Lett., 94, 151106, (2009)

High-Speed Tuning in Vertical-Cavity Surface-Emitting Lasers

European Conference on Lasers and Electro Optics (CLEO Europe), Munich, Germany, CB13.5

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Highly Temperature-Stable, Long Wavelength Short-Injector Quantum Cascade Laser

10^th International Conference on Intersubband Transitions in quantum Wells (ITQW-2009), September 6^th- 11^th, Montreal, Canada, (2009).

A. Vizbaras | S. Katz | G. Boehm | M. C. Amann

InAs Quantum Dots emitting at 1.55 µm grown on InP substrate using MBE

DPG Fruehjahrstagung, Dresden, Germany (2009)

InAs Quantum Dots on AlGaInAs emitting in the optical C-Band at 1.55µm

21th International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, USA (2009)

Injectorless quantum cascade laser operating in continuous wave above room temperature

Semicond. Sci. Technol., 24, (2009), 122001.

InP-based VCSEL with Novel Short-Cavity Design for Enhanced Modulation Bandwidth

Proceedings of International Nano-Optoelectronics Workshop (i-NOW), August 2 - 15 in Stockholm/Berlin, 2009.

M. Mueller | W. Hofmann | M. C. Amann

Laser Wavelength Stabilization using Gases with Complex Spectral Fingerprint

Field Laser Applications in Industry and Research 2009 (FLAIR), Garmisch-Partenkirchen, Germany, p. 44 (2009)

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Long wavelength electrically pumped GaSb-based Buried Tunnel Junction VCSELs

Proc. of the 14th International Conference on Narrow Gap Semiconductors and Systems (NGSS), Physica Procedia, Vol. 3, Iss. 2, p. 1155-1159, Sendai, Japan (2009).

A. Bachmann | S. Arafin | K. Kashani-Shirazi | M. C. Amann

Long-Wavelength BTJ-VCSELs with improved Modulation Bandwidth and Temperature Range

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and The International Quantum Electronics Conference (IQEC), May 31 - June 5 in Baltimore, (2009).

W. Hofmann | M. Mueller | G. Boehm | J. Rosskopf | M. C. Amann

Low-resistive ohmic contacts to n- InAs0.91Sb0.09 for GaSb-based VCSELs in the mid-infrared range

Semiconductor Integrated Optoelectronics Conference (SIOE), Cardiff, UK (2009).

S. Arafin | A. Bachmann | K. Kashani-Shirazi | S. Priyabadini | M. C. Amann

Low-resistive sulphur-treated ohmic contacts to n-type InAsSb

IET Optoelectronics, Vol. 3, no. 6, p. 259-263 (2009).

S. Arafin | A. Bachmann | K. Kashani-Shirazi | S. Priyabadini | M. C. Amann

Low-resistive thermally stable metal-semiconductor contacts on n-GaSb using n-InAsSb contact layer

International Conference on Frontiers of Physics (IFCP), Kathmandu, Nepal, (2009)

S. Priyabadini | S. Arafin | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Low-Threshold Strained Quantum-Well GaSb-Based lasers Emitting in the 2.5 to 2.7 µm Wavelength range

IEEE Photonics Technology Letters Vol.21 (16), 1106 (2009).

K. Kashani-Shirazi | K. Vizbaras | A. Bachmann | S. Arafin | M. C. Amann

Miniaturized Laser Spectroscopic CO Sensor for Industrial and Safety Applications

Procedia Chemistry, 1, 1383-1386 (2009)

J. Chen | A. Hangauer | R. Strzoda | M. Fleischer | M. C. Amann

Near-Infrared Gas Sensing using Hollow Waveguides and PCFs Directly Coupled to VCSELs

Field Laser Applications in Industry and Research 2009 (FLAIR), Garmisch-Partenkirchen, Germany, p. 93 (2009)

Optimized MBE growth technique for GaSb-based edge emitters at 2.7 µm

Euro MBE 2009, 8th - 11th March 2009, Zacopane, Poland (2009)

Planarization of overgrown tunnel junctions for InP-based VCSEL by MOVPE

European Workshop on Metalorganic Vapor Phase Epitaxy 2009 (EWMOVPE XIII), Ulm, Germany

Quantum Dots on AlGaInAs Lattice matched to InP emitting at 1.55 µm (Poster)

Nim/CeNS/SFB486 Winterschool 2009, Nanosystems and Sensors, 1.-7. March 2009

Short-Cavity Long-Wavelength VCSELs with Modulation Bandwidths in Excess of 15 GHz

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 21, NO. 21, NOVEMBER 1, 2009

M. Mueller | W. Hofmann | G. Boehm | M. C. Amann

Short-Injector Quantum Cascade Laser Emitting at 8 µm Wavelength With High Slope Efficiency

IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 21, No. 19, pp. 1384-1386, (2009).

A. Vizbaras | S. Katz | G. Boehm | M. C. Amann

Simultaneous two-level lasing in GaInAsSb/GaSb strained quantum-well lasers

Applied Physics Letters 95, 071107 (2009)

K. Vizbaras | K. Kashani-Shirazi | M. C. Amann

Temperature and doping dependence of electron spin relaxation in GaSb

Semicond. Sci. Technol. 24 025018 (2009)

C. Hautmann | F. Jaworeck | K. Kashani-Shirazi | M. C. Amann | M. Betz

Ultra-low threshold GaSb-based laser diodes at 2.65 µm

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, (2009)

K. Kashani-Shirazi | A. Bachmann | S. Arafin | K. Vizbaras | M. C. Amann

VCSEL-Based Oxygen Sensor for Combustion Optimization in Gas/Oil Furnaces

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, (2009)

J. Chen | A. Hangauer | R. Strzoda | M. Fleischer | M. C. Amann

1.55-µm VCSEL arrays for high-bandwidth WDM-PONs

IEEE Photonics Technology Letters 20 (2008) 291-293.

54 GHz multimode VCSELs by optical injection locking

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CPDB1

Accurate extraction method of the FM response of VCSELs based on wavelength modulation spectroscopy

Applied Physics B: Lasers and Optics 90 (2008) 243-247.

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Accurate measurement of the wavelength modulation phase shift of tunable vertical-cavity surface-emitting lasers (VCSELs)

Conference on Semiconductor and Integrated Optoelectronics, Cardiff, United Kingdom (2008), 38

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Adjustable chirp injection-locked 1.55-µm VCSELs for enhanced chromatic dispersion compensation at 10-Gbit/s

Proc. of OFC/NFOEC, San Diego USA, 2008, OWT7

Analysis of thermal tuning in vertical-cavity surface-emitting lasers

European Semiconductor Laser Workshop, Eindhoven, The Netherlands (2008)

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Compact carbon monoxide sensor using a continuously tunable 2.3 µm single-mode VCSEL

21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, Newport Beach, USA, 721-722 (2008)

Continuous wave operation of injectorless quantum cascade lasers at low temperatures

Appl. Phys. Lett., 2008, 92, 181103

S. Katz | A. Friedrich | G. Boehm | M. C. Amann

Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting laser at 2.3 µm

Electr. Lett. 44, 202-203 (2008).

Data inversion and adjustable chirp in 10-Gbps directly-modulated injection-locked 1.55-µm VCSELs

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CMW5

Diffraction loss in long-wavelength buried tunnel junction VCSELs analyzed with a hybrid coupled-cavity transfer-matrix model

Optics Express 16(25) (2008).

Dual wavelength emission in injectorless quantum cascade lasers

Proc. of 20th IPRM, 2008, Versailles

S. Katz | M. Maier | G. Boehm | M. C. Amann

Dynamic wavelength tuning behavior of vertical-cavity surface-emitting lasers

Conference on Semiconductor and Integrated Optoelectronics, Cardiff, United Kingdom (2008), 39

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Electrically Pumped GaSb-based VCSEL with Buried Tunnel Junction

Conference on Lasers and Electro-Optics (CLEO), San Jose, USA (2008).

Extended near-infrared wavelength VCSELs for optical sensing

IEEE/LEOS Intenational Semiconductor Laser Conference 2008, Sorrento, Italy

Formation of self-assembled quantum dots using ultra low growth rate for applications in the telecommunication regime at 1.3 and 1.5 µm.

The 22nd General Conference of the Condensed Matter Division of the European Physical Society (EPS-CMD 22), Rom, Italy (2008)

GaInAsN growth studies for InP based Long Wavelength Laser Applications

International Conference: 15th ICMBE 2008, Vancouver, Canada published in Journal of Crystal Growth, pp. 1719-1722

T. Gruendl | G. Boehm | R. Meyer | M. C. Amann

GaSb-based Electrically Pumped VCSEL with Buried Tunnel Junction Operating Continuous Wave up to 50°C

21st IEEE International Semiconductor Laser Conference, Sorrento, Italy (2008).

A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Growth of antimonides by MOVPE

DPG Fruehjahrstagung, Berlin, Germany, 2008

C. Grasse | R. Meyer | G. Boehm | M. C. Amann

Growth of low density quantum dots on AlGaInAs by MBE using ultra low growth rates

Semiconductor Quantum Dot Devices and Applications, Rennes, France (2008).

Growth of self-assembled quantum dots for single photon application at 1.55 µm

DPG Fruehjahrstagung, Berlin, Germany (2008)

Growth of various antimony-containing alloys by MOVPE

Journal of Crystal Growth 310, 4835-4838 (2008)

C. Grasse | G. Boehm | U. Breuer | R. Meyer | M. C. Amann

Growth of various antimony-containing alloys by MOVPE

14th International Conference on MOVPE, Metz, France (2008)

C. Grasse | G. Boehm | U. Breuer | R. Meyer | M. C. Amann

High-speed bi-directional communication using optically injection-locked semiconductor lasers

Proc.of IEEE Annual Workshop on Interconnections within High Speed Digital Systems, Santa Fe USA (2008), MA3

L. Chrostowski | Q. Gu | W. Hofmann | M. C. Amann

Highly efficient single-photon emission from single quantum dots within a two-dimensional photonic band-gap

Phys. Rev. B 77, 073312 (2008)

Injectorless Quantum Cascade Lasers for the Mid-Infrared

Radio Science Bulletin, 2008, 326, p. 20-28

M. C. Amann | S. Katz

Injectorless quantum cascade lasers with threshold current densities below 500 A/cm²

Proc. of 21st ISLC, Sorrent, Italy (2008)

S. Katz | G. Boehm | M. C. Amann

Investigation of the nonresonant dot-cavity coupling in two-dimensional photonic crystal nanocavities

Phys. Rev. B 77, 161303(R) (2008)

Long-wavelength 2-D VCSEL arrays for optical interconnects

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CMW7

Long-wavelength VCSELs and VCSEL arrays for high-speed, high-power and high sensitivity

Proc. of III. International Conference on Laser Processes and Components (LPC) (2008) pp.33

W. Hofmann | G. Boehm | M. Ortsiefer | M. C. Amann

Low-threshold Injectorless Quantum Cascade Laser with Four Material Compositions

Electron. Lett., 2008, 44, pp. 580-581

S. Katz | G. Boehm | M. C. Amann

MBE Growth of active regions for electrically-pumped, cw-operating GaSb-based VCSELs

Journal of Crystal Growth 311 (2009), pp. 1908-1911

K. Kashani-Shirazi | A. Bachmann | G. Boehm | S. Ziegler | M. C. Amann

MBE growth of active regions for electrically-pumped, cw-operating GaSb-based VCSELs

15th international Conference on molecular beam epitaxy (MBE 2008), 3rd - 8th August 2008, Vancouver, Canada (2008)

Micromachined tunable vertical-cavity surface-emitting lasers with narrow linewidth for near infrared gas detection

Proc. SPIE, Vol. 7266, 72660O (2008), Conference on Optomechatronic Technologies, San Diego, USA, 2008

Mid-Infrared Optical Response of Heavily Doped GaSb:Te

9th International Conference on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD), Freiburg, Germany, p. 164-5 (2009)

Modeling of the n-th harmonic spectra used in wavelength modulation spectroscopy and their properties

Applied Physics B: Lasers and Optics 90, 249-254 (2008)

Monolithic 2D high-power arrays of long-wavelength VCSELs

Photonics West, San Jose, USA (2008) 6908-06 pp. 1-7.

W. Hofmann | M. Görblich | M. Ortsiefer | G. Böhm | M. C. Amann

Optically injection-locked VCSEL as a duplex transmitter/receiver

IEEE Photonics Technology Letters, Vol. 20, pp.463-465

Q. Gu | W. Hofmann | M. C. Amann | L. Chrostowski

Optically injection-locked VCSEL for bi-directional optical communication

Proc. of Conference on Lasers and Electro-Optics CLEO/QELS, San Jose USA (2008), CMW6

Q. Gu | W. Hofmann | M. C. Amann | L. Chrostowski

Quantum Dot Single Photon Source for 1.3 and 1.55 µm (Poster)

1st Joint Nano Workshop, 10.-11. June 2008

Realisation of Long Wavelength Lasers Based on InP Substrate

Invited talk: Graduierten Kolleg 2008, Darmstadt, Germany

T. Gruendl | G. Boehm | R. Meyer | M. C. Amann

Recent Progress and Prospects on GaSb-based BTJ-VCSELs

International Semiconductor Laser Workshop, San Jose, USA (2008).

A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Recent progress on electrically-pumped GaSb-based VCSELs emitting above 2 µm for sensing applications

9th International Conference on Mid-Infrared Optoelectronics: Materials and Devices, Freiburg, Germany (2008) (invited).

Reduction of hetero-interface resistivity in n-type AlAsSb/GaSb distributed Bragg reflectors

Semicond. Sci. Technol. 23 (2008) 025018.

Simplified model of the dynamic thermal tuning behavior of Vertical-Cavity Surface-Emitting Lasers

IEEE Photonics Technology Letters 20, 1082 – 1084 (2008)

J. Chen | A. Hangauer | M. C. Amann

Simulation of active regions for GaSb-based VCSELs

Conference proceedings to the International Nano Optoelectronics Workshop, Tokyo, Saiko and Shonan, Japan (2008)

K. Kashani-Shirazi | A. Bachmann | S. Arafin | S. Ziegler | M. C. Amann

Single-mode Continuous Wave Operation of Electrically Pumped 2.25 µm GaSb-based VCSEL

20th International Conference on Indium Phosphide and Related Materials, Versailles, France (2008).

Small Signal Dynamics of an Electrically-Pumped Long-Wavelength Tunable VCSEL

IEEE 21st International Semiconductor Laser Conference (ISLC), Sorrento, Italy (2008)

Square root law thermal response in VCSELs: Experiment and theory

IEEE/LEOS Conference on Lasers and Electro-Optics, San Jose, USA (2008), JThA27

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Subwavelength gratings as polarization selective reflectors

DPG Fruehjahrstagung, Berlin, Germany (2008).

N. Muenzenrieder | T. Lim | A. Bachmann | K. Kashani-Shirazi | M. C. Amann

Towards an electrically driven single photon source

DPG Fruehjahrstagung, Berlin, Germany (2008)

Towards an Electro-Optically Driven Single Photon emitting Device

The 8th International conference on Nanotechnology (IEEE-nano2008), Arlington Texas, USA (2008)

Tunable single quantum dot nanocavities for cavity QED experiments

J. Phys.: Condens. Matter 20, 454209 (2008)

Wavelength modulation spectroscopy with a widely tunable InP-based 2.3 µm vertical-cavity surface-emitting laser

Optics Letters 33, 1566-1568 (2008)

A. Hangauer | J. Chen | R. Strzoda | M. Ortsiefer | M. C. Amann

1 x 12 VCSEL array at 1.55 µm for high-bandwidth at metro-range

Proc. of European Conference on Optical Communications (ECOC) 2007, Berlin, Germany (2007) 211-212.

W. Hofmann | E. Wong | G. Böhm | M. Ortsiefer | M. C. Amann

40 GHz bandwidth and 64 GHz resonance frequency in injection-locked 1.55 µm VCSELs

IEEE J. of Selected Topics in Quantum Electronics 13 (2007) 1200-1208.

Dual-resonance frequency response in injection-locked 1.55 µm VCSELs

OFC/NFOEC, Anaheim, USA (2007) 1-3.

B. Faraji | L. Chrostowski | W. Hofmann | M. C. Amann

Efficient spatial redistribution of quantum dot spontaneous emission from two-dimensional photonic crystals

Appl. Phys. Lett. 91, 061106 (2007)

Electrically probing photonic bandgap phenomena in contacted defect nanocavities

Appl. Phys. Lett. 91, 201111 (2007)

Electroluminescence from electrically pumped GaSb-based VCSELs

Springer Proceedings in Physics (2007).

Experimental characterization of the frequency modulation behavior of vertical cavity surface emitting lasers

Applied Physics Letters 91 (2007) 141105.

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

First results of electrically pumped GaSb-based VCSELs

13th Conference on Narrow Gap Semiconductors, Guildford, United Kingdom (2007).

Formation of self-assembled quantum dots on AlInAs and GaInAs matrices using a GaSb sublayer

Applied Physics Letters 91 (2007) 083111-3.

R. Enzmann | S. Dachs | R. Meyer | J. Finley | M. C. Amann

Future-proof WDM-PONs with bandwidth/wavelength upgradeable VCSEL arrays

Proc. of European Conference on Optical Communications (ECOC) 2007, Berlin, Germany (2007) 5 pp. 277-278.

E. Wong | W. Hofmann | M. C. Amann

Growth and fabrication of electrically pumped GaSb-based VCSELs

EURO-MBE, Granada, Spain (2007).

O. Dier | C. Lauer | A. Bachmann | T. Huesgen | M. C. Amann

Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3µm

Journal of Crystal Growth 301 (2007) 941-944.

Growth of low density quantum dots on AlInAs and GaInAs using a thin GaSb sublayer

LWQD International Workshop on Long Wavelength Quantum Dots: Growth and Applications, Rennes, France (2007).

R. Enzmann | S. Dachs | R. Meyer | J. J. Finley | M. C. Amann

High-power 1.55 µm VCSEL arrays

Conference on Lasers and Electro-Optics CLEO Europe /IQEC, Munich, Germany (2007) pp. 1.

High-speed 1.55 µm VCSELs

OECC/IOOC, Yokohama Kanagawa, Japan (2007) 408-409 (invited).

M. C. Amann | W. Hofmann

High-speed laser transmitters using cascaded optical injection locking

Nano-Optoelectronics Workshop, i-NOW 07, Beijing, China (2007) 196-197.

Incorporation behaviour of nitrogen in GaInAs layers based on InP substrate for indium concentrations from 0 to 100%.

Deutscher MBE Workshop 2007 (Forschungszentrum Jülich)

T. Gruendl | G. Boehm | R. Meyer | M. C. Amann

Linewidth of electrically pumped long-wavelength MEMS VCSELs

Conference on Lasers and Electro-Optics (CLEO) /Europe, Munich, Germany (2007).

Long-wavelength (L = 1.55 µm) monolithic VCSEL array with >3 W CW output power

Electronics Letters 43 (2007) 1025-1026.

W. Hofmann | M. Görblich | M. Ortsiefer | G. Böhm | M. C. Amann

Long-wavelength high-power VCSEL arrays

European Semiconductor Laser Workshop (ESLW), Berlin, Germany (2007).

W. Hofmann | M. Görblich | M. Ortsiefer | G. Böhm | M. C. Amann

Long-wavelength VCSELs for optical networks and trace-gas monitoring

Optics East, Baltimore, USA (2007) 67660F pp. 1-13 (invited).

New method based on wavelength modulation spectroscopy for measurement and characterization of the current to wavelength tuning frequency response of VCSEL

Book of Abstracts, International Conference on Tunable Diode Laser Spectroscopy, Reims, France (2007)

J. Chen | A. Hangauer | R. Strzoda | M. C. Amann

Novel cascaded injection-locked 1.55-µm VCSELs with 66 GHz modulation bandwidth

Opt. Express 15 (2007) 14810-14816.

Optical injection locking of VCSEL with amplitude modulated master

IEEE Int. Topical Meeting on Microwave Photonics, Victoria, Canada (2007) 183-186.

Progress in mid-infrared vertical-cavity surface-emitting lasers with electrical pumping

MIOMD International Conference on Mid-Infrared Optoelectronics Materials and Devices, Bad Ischl, Austria (2007) (invited).

C. Lauer | O. Dier | A. Bachmann | T. Huesgen | M. C. Amann

Quantum-cascade lasers without injector regions

Conf. Proc. of Photonics West, SPIE (International Society for Optical Engineering), San Jose, USA (2007) 648507-1-13 (invited).

A. Friedrich | M. C. Amann

Rayleigh backscattering and extinction ratio study of optically injection-locked 1.55 µm VCSELs

Electronics Letters 43 (2007) 182-183.

E. Wong | X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Realization of a tunnel-junction for electrically-pumped GaSb-based vertical-cavity surface-emitting lasers for sensing applications

European Semiconductor Laser Workshop (ESLW), Berlin, Germany (2007).

Reconstruction of the transmission from n-th harmonic spectra

FLAIR Conference, Florence, Italy (2007), Post Deadline Paper

A. Hangauer | J. Chen | R. Strzoda | M. C. Amann

Scaling rules for high-power 1.55 µm VCSEL arrays

Conference on Lasers and Electro-Optics CLEO/QELS, Baltimore, USA (2007) CTuGG3.

W. Hofmann | G. Böhm | M. Ortsiefer | M. C. Amann

Short-wavelength intersubband staircase lasers, with and without AlAs-blocking barriers

Semiconductor Science and Technology 22 (2007) 218-221.

A. Friedrich | G. Böhm | M. C. Amann

Straightforward modeling of the nth harmonic signals used in wavelength modulation spectroscopy and their mathematical properties

Book of Abstracts, TDLS International Conference on Tunable Diode Laser Spectroscopy, Reims, France (2007)

Widely tunable twin-guide laser diodes with sampled gratings: design and performance

IEEE J. of Selected Topics in Quantum Electronics 13 (2007) 1095-1103.

10-Gb/s data transmission using BCB passivated 1.55-µm InGaAlAs-InP VCSELs

IEEE Photonics Technology Letters 18 (2006) 424-426.

40 GHz bandwidth and 64 GHz resonance frequency in injection-locked 1.55 µm VCSELs

IEEE International Semiconductor Laser Conference, Waikoloa, USA (2006) 117-118.

Band offset measurements of quinternary (AlGaIn)(AsSb)

DPG Fruehjahrstagung, Dresden, Germany (2006).

A. Bachmann | O. Dier | C. Lauer | R. Meyer | M. C. Amann

BCB-passivated 1.55 µm VCSELs for high speed applications

Nano- Optoelectronic Workshop and BaCaTec Summer School in Advances of Photonics, Berkeley, USA (2006) Poster.

W. Hofmann | M. C. Amann

Chipbasiertes Tumor-Monitoring System für die radiotherapeutische Intervention

Jahrestagung der Deutschen Gesellschaft für Medizinische Physik e.V., Regensburg, Germany (2006).

H. Grothe | J. Freyer | B. Wolf | M. C. Amann

Direct modulation of widely tunable twin-guide lasers

IEEE Photonics Technology Letters 18 (2006) 1293-1295.

Fabrication of widely tunable (> 40 nm) twin-guide laser diodes

International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan (2006).

R. Meyer | R. Todt | T. Jacke | M. C. Amann

Halbleiterlichtquellen - Anwendungen in der Gasanalyse

OTTI - Fachforum, Regensburg, Germany (2006) (invited).

High speed (> 11 GHz) modulation of BCB-passivated 1.55 µm InGaAlAs-InP VCSELs

Electronics Letters 42 (2006) 976-978.

High speed modulation of BCB-passivated 1.55 µm VCSELs

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Duisburg, Germany (2006) 119-121.

High-temperature, low-threshold injectorless quantum-cascade lasers, emitting at 6.8µm

IEEE Internat. Semicond. Laser Conf., Kohala Coast, Hawaii (2006).

A. Friedrich | C. Huber | G. Böhm | M. C. Amann

Influence of Indium-free sublayers on the formation of self-assembled quantum dots on InP(001)-Substrates

DPG Fruehjahrstagung, Dresden, Germany (2006).

R. Enzmann | S. Dachs | G. Böhm | R. Meyer | M. C. Amann

Injectorless quantum cascade lasers

2nd International Workshop on Quantum Cascade Lasers, Marina di Ostuni, Italy (2006) (invited).

InP-based VCSELs with buried tunnel junction for optical communication and sensing in the 1.3-2.3 µm wavelength range

IEEE International Semiconductor Laser Conference (ISLC), Waikoloa, USA (2006) 113-114.

Long wavelength edge-emitting laser diodes with quinternary AlGaInAsSb barrier material

Nano- Optoelectronic Workshop and BaCaTec Summer School of Advances in Photonics, Berkeley, USA (2006).

Long-wavelength (1.3 µm) InGaAlAs-InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing

physica status solidi (a) 203 (2006) 3538-3544 (invited).

M. C. Amann | M. Ortsiefer

Low-resistive metal/n+-InAsSb/n-GaSb contacts

Semiconductor Science and Technology 21 (2006) 1274-1277.

C. Lauer | O. Dier | M. C. Amann

Low-resistive tunnel junctions and metal to n-type semiconductor contacts for GaSb-based devices

International Symposium on Compound Semiconductors (ISCS), Vancouver, Canada (2006).

C. Lauer | O. Dier | M. C. Amann

Low-threshold quantum cascade lasers without injector regions, emitting at 6.7µm

International Conference on Indium Phosphide and Related Materials (IPRM), Princeton, USA (2006) 19-22.

A. Friedrich | G. Böhm | M. C. Amann

Low-threshold room-temperature operation of injectorless quantum-cascade lasers: influence of doping density

Electronics Letters 42 (2006) 1228-1229.

A. Friedrich | C. Huber | G. Böhm | M. C. Amann

MEMS-tunable 1.55-µm VCSEL with extended tuning range incorporating a buried tunnel junction

IEEE Photonics Technology Letters 18 (2006) 688-690.

M. Maute | B. Kögel | G. Böhm | P. Meissner | M. C. Amann

Modulation efficiency enhancement of 1.55-µm injection-locked VCSELs

IEEE International Semiconductor Laser Conference, Waikoloa, USA (2006) 125-126.

X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity

Electronics Letters 42 (2006) 419-420.

O. Dier | C. Lauer | M. C. Amann

Novel modulated-master injection-locked 1.55 µmVCSELs

Nano- Optoelectronic Workshop and BaCaTec Summer School in Advances of Photonics, Berkeley, USA (2006) Poster.

X. Zhao | Y. Zhou | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Novel modulated-master injection-locked 1.55-µm VCSELs

Opt. Express 14 (2006) 10500-10507.

X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Optically injection-locked 1.55 µm VCSELs as upstream transmitters in WDM passive optical networks

Nano- Optoelectronic Workshop and BaCaTec Summer School in Advances of Photonics, Berkeley, USA (2006) Poster.

E. Wong | X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Optically injection-locked 1.55-µm VCSELs as upstream transmitters in WDM-PONs

IEEE Photonics Technology Letters 18 (2006) 2371-2373.

E. Wong | X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Recent progress on semiconductor laser research at the WSI

University of Berkeley, California, USA (2006) (invited).

Sampled grating tunable twin-guide laser diodes with wide tuning range (?40nm) and large output power (?10mW)

physica status solidi (c) 3 (2006) 403-406.

Single-mode and wavelength-tunable long wavelength VCSELs

University of California, Santa Barbara, USA (2006) (invited).

Slow and fast light using master-modulated injection-locked VCSELs

Conference on Lasers and Electro-Optics (CLEO), Long Beach, USA (2006) Paper-CWG 5.

X. Zhao | Y. Zhou | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Small signal equivalent circuit model of buried tunnel junction VCSEL chips

Chinese Journal of Semiconductors 27 (2006) 2015-2018.

Tunnel junctions for GaSb-based devices

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Duisburg, Germany (2006).

C. Lauer | O. Dier | M. C. Amann

Uncooled high speed (> 11 GHz) 1.55 µm VCSELs for CWDM access networks

Europ. Conf. Optical Commun. (ECOC), Cannes, France (2006) 59-60.

W. Hofmann | G. Böhm | M. Ortsiefer | E. Wong | M. C. Amann

Uncooled, optical injection-locked 1.55 µm VCSELs for upstream transmitters in WDM-PONs

Optical Fiber Conference (OFC), Anaheim, USA (2006) PDP 50 pp. 1-3.

E. Wong | X. Zhao | C. J. Chang-Hasnain | W. Hofmann | M. C. Amann

Very long wavelength VCSELs for sensing applications

CONSRT Nano- Optoelectronic Workshop, Berkeley, USA (2006) (invited).

2.5 mW single-mode operation of 1.55 µm buried tunnel junction VCSELs

IEEE Photonics Technology Letters 17 (2005) 1596-1598.

30nm digitally tunable laser with a 0.57nm frequency grid

Conference on Lasers and Electro-Optic (CLEO) /Europe, Munich, Germany (2005) CP1-7-THU.

T. Jacke | R. Todt | R. Meyer | M. C. Amann

32nm digitally tunable laser diode with a 0.58nm wavelength grid using a vertically integrated Mach-Zehnder interferometer

Applied Physics Letters 87 (2005) 201113.

T. Jacke | R. Todt | R. Meyer | M. C. Amann

Above room temperature operation of injectorless quantum cascade lasers

Indium Phosphide and Related Materials Conference (IPRM), Glasgow, Scotland, UK (2005).

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Buried heterostructure laser with vertically-integrated Mach-Zehnder interferometer for Vernier-effect-based wide wavelength tuning

IEE Proceedings of Optoelectronics 152 (2005) 72-76.

T. Jacke | R. Todt | M. C. Amann

Calculation of the linewidth broadening in vertical-cavity surface-emitting lasers due to temperature fluctuations

Applied Physics Letters 86 (2005) 191108.

C. Lauer | M. C. Amann

Coupled cavity phenomena within MEMS-tunable long-wavelength VCSELs

Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA (2005) CThA4.

Demonstration of Vernier effect tuning in tunable twin-guide laser diodes

IEE Proceedings of Optoelectronics 152 (2005) 66-71.

R. Todt | T. Jacke | R. Laroy | G. Morthier | M. C. Amann

Diffusion of dopants in highly (1e20/cm3) n- and p-doped GaSb-based materials

Journal of Vacuum Science and Technology B 23 (2005) 349-353.

O. Dier | M. Grau | C. Lauer | C. Lin | M. C. Amann

High output power tunable twin-guide laser diodes with improved lateral current injection structure

Electronics Letters 41 (2005) 190-191.

R. Todt | T. Jacke | R. Meyer | M. C. Amann

High performance injectorless quantum-cascade lasers

Electronics Letters 41 (2005) 529-531.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

High single mode output power from long-wavelength VCSELs using curved micro-mirrors for mode control

IEE Electronics Letters 41 (2005) 43-44.

Influence of facet reflections on monolithic widely tunable laser diodes

IEEE Photonics Technology Letters 17 (2005) 2520-2522.

R. Todt | M. C. Amann

Injectorless quantum-cascade lasers

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (2005).

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Laser hygrometer using a vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 1.84µm

IEEE Transactions of Instrumentation and Measurement 54 (2005) 1214-1218.

Long-wavelength MEMS tunable VCSEL with high sidemode suppression

IEEE/LEOS International Conference on Optical MEMS and Their Applications (MOEMS), Oulu, Finland (2005).

Long-wavelength tunable vertical-cavity surface-emitting lasers and the influence of coupled cavities

Opt. Express 13 (2005) 8008-8014.

Low-threshold injectorless quantum cascade lasers emitting at ?? 7.9 mm

International Conference on Intersubband Transitions in Quantum Wells (ITQW), Falmouth, Cape Cod, USA (2005).

A. Friedrich | G. Böhm | M. C. Amann

Modulation bandwidths of widely tunable SG-TTG laser diodes

European Semiconductor Laser Workshop (ESLW), Glasgow, United Kingdom (2005).

Quantum-cascade lasers without injector regions operating above room temperature

Applied Physics Letters 86 (2005) 161114.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Sampled grating tunable twin-guide laser diodes with over 40nm electronic tuning range

IEEE Photonics Technology Letters 17 (2005) 2514-2516.

State-of-the-art performance of widely tunable twin-guide laser diodes

European Semiconductor Laser Workshop (ESLW), Glasgow, United Kingdom (2005).

Thermally widely tunable laser diodes with distributed feedback

Europ. Conf. Optical Commun., Glasgow, United Kingdom (2005) We4.P.77.

R. Todt | T. Jacke | R. Meyer | M. C. Amann

Thermally widely tunable laser diodes with distributed feedback

Applied Physics Letters 87 (2005) 021103.

R. Todt | T. Jacke | R. Meyer | M. C. Amann

Tunable laser diodes and related optical sources

John Wiley & Sons, Hoboken, N.J., USA (2005).

J. Buus | M. C. Amann | D. J. Blumenthal

Tunable twin-guide (TTG) distributed feedback (DFB) laser diodes with over 9nm continuous electro-optic tuning range

Electronics Letters 41 (2005) 1063-1065.

R. Todt | T. Jacke | R. Meyer | J. Adler | M. C. Amann

VCSELs emerge as low-cost alternatives to edge-emitters

Laser Focus World 41 (2005) 127-131.

C. Lauer | M. Maute | W. Hofmann | M. C. Amann

Wide wavelength tuning of sampled-grating tunable twin-guide laser diodes

Photonics West, San Jose, USA (2005).

Widely tunable Mach-Zehnder interferometer laser with improved tuning efficiency

Electronics Letters 41 (2005) 45-46.

T. Jacke | R. Todt | M. Rahim | M. C. Amann

Widely tunable twin-guide laser diodes at 1.55µm

OptoElectronics and Communications Conference (OECC), Seoul, Korea (2005) PDP 07.

Widely tunable twin-guide laser diodes with over 40nm-tuning range

International Symposium on Compound Semiconductors (ISCS), Rust, Germany (2005) Tu3.6.

80°C continuous-wave operation of 2.01µm wavelength InGaAlAs-InP vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters 16 (2004) 2209-2211.

A new concept for micro-mechanically tunable long wavelength VCSELs

Conference on Lasers and Electro-Optics (CLEO), San Francisco, USA (2004).

AlGaAsSb/AlGaInAs type-II superlattices for tuning regions in tunable laser diodes

Photonics Europe, Strasbourg, France (2004) 163-173.

G. Rösel | T. Jacke | M. Grau | R. Meyer | M. C. Amann

Chirp and linewidth enhancement factor of 1.55µm VCSEL with buried tunnel junction

Electronics Letters 40 (2004) 1266-1267.

Continuously tunable long-wavelength MEMS-VCSEL with over 40 nm tuning range

IEEE Photonics Technology Letters 16 (2004) 2212-2214.

Design and fabrication of widely tunable twin-guide laser diodes

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (2004).

Enhanced carrier lifetime for the tuning region in tunable laser diodes based on type-II quantum wells

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China (2004).

T. Jacke | G. Rösel | M. Grau | R. Meyer | M. C. Amann

Enhanced tuning efficiency in tunable laser diodes using type-II superlattices

IEEE Photonics Technology Letters 16 (2004) 738-740.

G. Rösel | T. Jacke | M. Grau | R. Meyer | M. C. Amann

GaInAsSb/AlGaAsSb-lasers in the wavelength range between 2.73 µm and 2.93 µm

Physica E 20 (2004) 507-510.

M. Grau | C. Lin | O. Dier | M. C. Amann

High-speed vertical-cavity laser diodes at 1.55µm

Joint Symposium on Opto- and Microelectronic Devices and Circuits (SODC), Wuhan, China (2004) 5-6.

High-temperature (T=490K) operation of 5.8µm quantum cascade lasers with InP/GaInAs waveguides

Electronics Letters 40 (2004) 1416-1417.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

InP-based long-wavelength vertical-cavity surface-emitting lasers with buried tunnel junction

physica status solidi (c) 1 (2004) 2183-2209.

Long wavelength VCSEL for optical access networks

International Plastic Optical Fibres Conference (POF), Nürnberg, Germany (2004) 19-26.

Long-wavelength InP-based VCSELs with buried tunnel junctions: properties and applications

Photonics West, San Jose, USA (2004) 1-15.

Long-wavelength VCSELs

International Conference on Indium Phosphide and Related Materials (IPRM), Kagoshima, Japan (2004) 695-699 (invited).

M. Maute | M. C. Amann

Low threshold room-temperature continuous-wave operation of 2.24-3.04 µm GaInAsSb/AlGaAsSb quantum-well lasers

Applied Physics Letters 84 (2004) 5088-5090.

C. Lin | M. Grau | O. Dier | M. C. Amann

Micro-mechanically and widely tunable long-wavelength VCSELs

IEEE International Semiconductor Laser Conference, Matsue-shi, Japan (2004) 119-120.

Micro-mechanically tunable long wavelength VCSEL with buried tunnel junction

Electronics Letters 40 (2004) 430-431.

Micro-mechanically tunable long-wavelength VCSELs

IEEE Laser Workshop, San Francisco, USA (2004).

New widely tunable edge-emitting laser diodes at 1.55µm developed in the European IST-project NEWTON

Asia-Pacific Optical Communications (APOC), Beijing, China (2004).

Non-equilibrium electronic distribution within one period of InP-based quantum cascade lasers

Semicond. Sci. Technol. 19, S342-S344 (2004)

Novel 2-chip-concept for micro-mechanically tunable long-wavelength VCSELs for the 1.55µm wavelength range

Photonics Europe, Strasbourg, France (2004) 240-248.

Room temperature 2.81 µm continuous wave operation of GaInAsSb/AlGaAsSb-laser

IEEE Photonics Technology Letters 16 (2004) 383-385.

M. Grau | C. Lin | M. C. Amann

Room-temperature operation of GaInAsSb-AlGaAsSb quantum well lasers in the 2.2 to 3µm wavelength range

Conference on Lasers and Electro-Optics (CLEO), San Francisco, USA (2004).

M. Grau | C. Lin | O. Dier | M. C. Amann

Selective and non-selective wet-chemical etchants for GaSb-based materials

Semiconductor Science and Technology 19 (2004) 1250-1253.

O. Dier | C. Lin | M. Grau | M. C. Amann

Technology and design of widely tunable lasers with vertically integrated Mach-Zehnder Interferometer (VMZ) grown by Chemical Beam Epitaxy (CBE)

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (2004).

T. Jacke | R. Todt | G. Rösel | R. Meyer | M. C. Amann

Tempern von aktiven Zonen aus GaInAsSb/AlGaAsSb MQWs für GaSb-VCSEL

Deutscher MBE-Workshop, Braunschweig, Germany (2004).

Tunable InP-based buried heterostructure lasers with vertically integrated Mach-Zehnder interferometer (VMZ)

Photonics Europe, Strasbourg, France (2004) 174-182.

T. Jacke | R. Todt | M. C. Amann

Tunable twin-guide laser diodes for wide wavelength tuning at 1.55µm

Optics East, Philadelphia, USA (2004).

Tuning performance of widely tunable twin-guide laser diodes

Workshop on Compound Semiconductor Devices and Integrated Circuits Europe (WOCSDICE), Smolenice Castle, Slovakia (2004) 99-100.

Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Deutscher MBE-Workshop, Braunschweig, Germany (2004).

Tunnel junctions for ohmic intra-device contacts on GaSb-substrates

Applied Physics Letters 85 (2004) 2388-2389.

Very high temperature operation of 5.75 µm quantum-cascade lasers

International Conference on the Physics of Semiconductors (ICPS), Flagstaff, USA (2004) 1567-1568.

A. Friedrich | G. Scarpa | G. Böhm | M. C. Amann

Wide wavelength tuning of sampled grating tunable twin-guide laser diodes

Electronics Letters 40 (2004) 1491-1492.

Wide wavelength tuning of sampled-grating tunable twin-guide laser diodes

European Semiconductor Laser Workshop (ESLW), Säröhus, Sweden (2004).

Widely tunable lasers with vertically integrated Mach-Zehnder interferometer

International Conference on Indium Phosphide and Related Materials (IPRM), Kagoshima, Japan (2004) 473-476.

T. Jacke | R. Todt | R. Meyer | M. Maute | M. C. Amann

1.8 µm vertical-cavity surface-emitting laser absorption measurements of HCl, H2O and CH4

Measurement Science and Technology 14 (2003) 472-478.

Continuous wave GaInAsSb/AlGaAsSb type-I double quantum well lasers for 2.96 µm wavelength

Electronics Letters 39 (2003) 1816-1817.

M. Grau | C. Lin | O. Dier | M. C. Amann

Electrically pumped room temperature CW-VCSELs with emission wavelength of 2 µm

Electronics Letters 39 (2003) 57-58.

Electrically tunable mid-infrared electroluminescence from graded cascade structures

Appl. Phys. Lett. 83, 3015-3017 (2003)

Fabrication of in-plane gate transistors on hydrogenated diamond surfaces

APPLIED PHYSICS LETTERS 82 6 988-990 (2003)

InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 µm

Journal of Crystal Growth 251 (2003) 748-753.

Lateral index-guiding in InP-based laser diodes by oxidized AlAsSb layers

Workshop on Compound Semiconductor Devices and Integrated Circuits Europe (WOCSDICE), Fürigen, Switzerland (2003) 69-70.

G. Rösel | R. Todt | M. Grau | M. C. Amann

Low-loss GaInAs-based waveguides for high-performance 5.5 mu m InP-based quantum cascade lasers

IEE Proceedings-Optoelectronics 150, 284-287 (2003)

G. Scarpa | N. Ulbrich | G. Böhm | G. Abstreiter | M. C. Amann

Mid-infrared electroluminescence from device with changeable electron-hole distance

Electronics Lett. 39, 108-110 (2003)

Novel in-plane gate devices on hydrogenated diamond surfaces

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 199 1 56-63 (2003)

Novel in-plane gate devices on hydrogenated diamond surfaces

M. Stutzmann
phys. stat. sol. (a) 199, 56-63 (2003)

Optimization of type-II heterostructures for the tuning region in tunable laser diodes

Semiconductor Science and Technology 18 (2003) 325-329.

G. Rösel | F. Köhler | R. Meyer | M. C. Amann

Progress on the development of a widely-tunable twin-guide laser

IST-NEWTON Workshop on Tunable Laser Diodes / European Semiconductor Laser Workshop, Torino, Italy (2003).

R. Todt | R. Meyer | M. C. Amann | R. Laroy | G. Morthier

Prospects of quantum cascade lasers with GaInAs Waveguides

Adv. in Solid State Phys. 43, 301-312 (2003) (ed. B. Kramer)

N. Ulbrich | G. Scarpa | G. Abstreiter | M. C. Amann

Quantitative measurement of the influence of growth interruptions on the Sb distribution of GaSb/GaAs quantum wells by transmission electron microscopy

Applied Physics Letters 83 (2003) 3123-3125.

M. Schowalter | A. Rosenauer | D. Gerthsen | M. Grau | M. C. Amann

Room temperature cw GaInAsSb-AlGaAsSb laser diodes for 3µm wavelength range

OSA Annual Meeting, Tucson, USA (2003) PDP10.

M. Grau | C. Lin | O. Dier | M. C. Amann

Single mode 1.55 µm VCSELs with low threshold and high output power

Electronics Letters 39 (2003) 1731-1732.

Tunable single and dual mode operation of an external cavity quantum-dot injection laser

J. Phys. D: Appl. Phys. 36, 1-3 (2003)

Characterization of sub-micron in-plane devices in H-terminated diamond

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH 193 3 517-522 (2002)

High-performance 5.5µm quantum cascade lasers with high-reflection coating

IEE Proc.-Optoelectron. 149, 201-205 (2002)

Improved large optical cavity design for 10.6 µm (Al)GaAs quantum cascade lasers

Physica E 13, 844-847 (2002)

Intersubband staircase laser

Appl. Phys. Lett. 80, 4312-4314 (2002)

N. Ulbrich | G. Scarpa | G. Böhm | G. Abstreiter | M. C. Amann

Strain-compensated InP-based quantum cascade lasers with and without injector regions

in Proc.of the 14th Indium Phosphide and related materials conference, 735-738 (2002)

G. Scarpa | N. Ulbrich | G. Böhm | M. C. Amann

Ultrafast switch-off of an electrically pumped quantum-dot laser

Appl. Phys. Lett. 81, 1177-1179 (2002)

Continuous room-temperature operation of electrically pumped quantum-dot microcylinder lasers

Appl. Phys. Lett. 79, 1766-1768 (2001)

M. Arzberger | G. Böhm | M. C. Amann | G. Abstreiter

Dark pulse formation in a quantum-dot laser

Appl. Phys. Lett. 79, 18-20 (2001)

Gain characteristics of self-assembled InAs/GaAs quantum dots

phys. stat. sol. (b) 224, 827-831 (2001)

M. Arzberger | G. Böhm | M. C. Amann | G. Abstreiter

High-temperature (T> 470 K) pulsed operation of 5.5µm quantum cascade lasers with high-reflection coating

Electronics Letters 37, 1341-1342 (2001)

Linewidth broadening of quantum dot emmission caused by temperature fluctuations

phys. stat. sol. (b) 224, 655-658 (2001)

M. Arzberger | M. C. Amann

Time-resolved amplified spontaneous emission in InAs/GaAs quantum dots

phys. stat. sol. (b) 224, 475-480 (2001)

Dynamics of amplified spontaneous emission in InAs/GaAs quantum dots

Appl. Phys. Lett. 76, 3507 (2000)

Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations

Phys. Rev. 62, 11029-11037 (2000)

M. Arzberger | M. C. Amann

Homogeneous line broadening in individual semiconductor quantum dots by temperature fluctuations

Physical Review B 62 (2000) 11029-11037.

M. Arzberger | M. C. Amann

Low-resistance InGa(Al)As tunnel junctions for long wavelength vertical-cavity surface-emitting lasers

Jpn. J. Appl. Phys. 39, 1727-1729 (2000)

Low-resistance InGa(Al)As tunnel junctions for long-wavelength vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters 39 (2000) 1727.

Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction

Electronics Lett. 36, 87-88 (2000)

M. Arzberger | M. Lohner | G. Böhm | M. C. Amann

Design and realization of a buried-heterostructure tunable-twin-guide laser diode with electrical blocking regions

IEEE Journal of Quantum Electronics 35 (1999) 794-802.

B. Schmidt | S. Illek | R. Gessner | M. C. Amann

Broad-band wavelength-tunable twin-guide lasers

Optoelectronics - Devices and Technologies 10 (1995) 27-38 (invited).

Distributed forward coupled (DFC) laser

IEEE J. of Selected Topics in Quantum Electronics 1 (1995) 387-395.

M. C. Amann | B. Borchert | S. Illek | T. Wolf

FMCW-Lidar with tunable twin-guide laser diode

In: Trends in Optical Fibre Metrology and Standards (ed. O. D. D. Soares), NATO ASI Series, Series E: Applied Sciences - Vol. 285, Kluwer Academic Publishers, Dordrecht, NL. (1995) 791-802.

A. Dieckmann | M. C. Amann

Phase-noise-limited accuracy of distance measurements in a frequency-modulated continuous-wave LIDAR with tunable twin-guide laser diode

Optical Engineering 34 (1995) 896-903.

A. Dieckmann | M. C. Amann

Tunable laser diodes

Conference on Lasers and Electro-Optics (CLEO)- Pacific Rim, Makuhari, Japan (1995) 108 (invited).

Wavelength tunable laser diodes and their applications

In: Trends in Optical Fibre Metrology and Standards (ed. D.D. Soares) (1995) 217-240.

Extended continuous tuning range (over 10 nm) of tunable twin-guide lasers

Conference on Lasers and Electro-Optics (CLEO), Anaheim, USA (1994) paper CWB-1.

T. Wolf | S. Illek | J. Rieger | B. Borchert | M. C. Amann

FMCW-LIDAR with tunable twin-guide laser diode

Conference on Industrial Applications of Laser Radar, Frankfurt, Germany (1994) 22-30.

A. Dieckmann | M. C. Amann

Tunable lasers and their uses

Summer School on Trends in Optical Fibre Metrology and Standards, Viana do Castelo, Portugal (1994).

Tunable semiconductor lasers

European Conference on Optical Communications (ECOC), Florenz, Italy (1994) 1011-1018 (invited).

Vertically integrated Mach-Zehnder interferometer (VMZ) widely tunable laser diode with improved wavelength access

Electronics Letters 30 (1994) 2047-2049.

B. Borchert | S. Illek | T. Wolf | J. Rieger | M. C. Amann

Wide range tunable lasers for WDM applications

Optoelectronics Conference (OEC), Makuhari Messe, Japan (1994) 208-209 (invited).

Widely tunable laser diodes with improved wavelength access

IEEE International Semiconductor Laser Conference (ISLC), Maui, USA (1994) paper PD-12.

M. C. Amann | B. Borchert | S. Illek | E. Veuhoff | T. Wolf

Broadband tunable laser diodes using codirectional mode coupling

European Conference on Integrated Optics (ECIO), Neuchatel, Switzerland (1993) paper 7-1.

Extrem low contact resistivity of Ti/Pt/Au contacts on p+-InGaAs as determined by a new evaluation method

Journal of the Electrochemical Society 140 (1993) 847-850.

G. Franz | M. C. Amann

Laser diodes and integrated optoelectronic circuits for fiber optical applications

European Trans. Telecommun. 4 (1993) 599-614 (invited).

T. Wolf | M. C. Amann | H. Albrecht

Novel trends in semiconductor lasers

CCTE meeting, Venedig, Italy (1993) (invited).

Recent progress on wavelength tunable laser diodes

GaAs-Conference, Freiburg, Germany (1993) paper WE 16 (invited).

Reduced effective linewidth enhancement factor ?eff of complex-coupled DFB lasers with absorptive gratings

Electronics Letters 29 (1993) 1367-1369.

T. W. Johannes | M. C. Amann | B. Borchert

Semiconductor light sources

Optical Properties of Semiconductors (Kluwer ed. G. Martinez) (1993) 291-320.

The effect of spatial correlation on the linewidth broadening in tunable laser diodes

IEEE Journal of Quantum Electronics 29 (1993) 1799-1804.

Tunable laser diodes and their applications

Optical Fiber Conference (OFC), San Jose, USA (1993) tutorial session-paper FG.

Tunable laser diodes utilizing transverse tuning scheme

IEEE Journal of Lightwave Technology 11 (1993) 1168-1182 (invited).

M. C. Amann | S. Illek

Tunable twin-guide (TTG) distributed feedback (DFB) laser with over 10 nm continuous tuning range

Electronics Letters 29 (1993) 2124-2125.

T. Wolf | S. Illek | J. Rieger | B. Borchert | M. C. Amann

Tuning range and spectral selectivity of the distributed forward coupled (DFC) laser

IEEE Photonics Technology Letters 5 (1993) 886-888.

M. C. Amann | B. Borchert | S. Illek | T. Wolf

Widely tunable distributed forward coupled (DFC) laser

Electronics Letters 29 (1993) 793-794.

M. C. Amann | B. Borchert | S. Illek | T. Wolf

Accurate method to evaluate the contact resistivity of Ti/Pt/Au contacts on p+-InGaAs

Proc. Symp. on Logic and Functional Devices for Photonics, Toronto, Canada (1992) 120-125.

G. Franz | M. C. Amann

Fully engineered coherent multichannel transmitters and receivers using data-induced polarization switching

Optical Fiber Conference (OFC), San Jose, USA (1992) paper-FC-3.

M. C. Amann | et al.

Phase noise limited resolution of coherent LIDAR using widely tunable laser diodes

Electronics Letters 28 (1992) 1694-1696.

Spectral linewidth of tunable laser diodes

European Conference on Optical Communications (ECOC), Berlin, Germany (1992) 737-744 (invited).

M. C. Amann | B. Borchert

Spectral linewidth of tunable twin-guide laser diodes

Archiv für Elektronik und Übertragungstechnik (AEÜ) 46 (1992) 63-72.

M. C. Amann | B. Borchert

Tunable twin-guide laser diodes with metal-clad ridge waveguide (MCRW) structure for coherent optical communications

European Trans. Telecommun. 3 (1992) 517-522.

T. Wolf | H. Westermeier | M. C. Amann

Broadband electronic wavelength tuning by codirectionally coupled twin-guide laser diode

European Conference on Optical Communications (ECOC), Paris, France (1991) 21-24.

S. Illek | W. Thulke | B. Borchert | M. C. Amann

Codirectionally coupled twin-guide laser diode for broadband electronic wavelength tuning

Electronics Letters 27 (1991) 2207-2208.

S. Illek | W. Thulke | M. C. Amann

Linewidth reduction in wavelength tunable laser diodes by voltage control

Electronics Letters 27 (1991) 531-532.

M. C. Amann | S. Illek | H. Lang

Narrow linewidth tunable-twin-guide lasers with metal-clad ridge-waveguide structure

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1991).

T. Wolf | M. C. Amann

Narrow-linewidth InGaAsP/InP metal-clad ridge-waveguide distributed feedback lasers

Japanese Journal of Applied Physics 30 (1991) L745-L747.

T. Wolf | B. Borchert | K. Drögemüller | M. C. Amann

Wavelength tunable single-mode laser diodes

Festkörperprobleme (Vieweg) 31 (1991) 201-218.

Comparison of alumina and silica based spin-on diffusion sources

Japanese Journal of Applied Physics 29 (1990) L712-715.

G. Franz | M. C. Amann | W. Thulke | R. Weber | R. Kaumanns

Continuous-tuning ranges of 3-section DBR lasers and TTG-DFB lasers

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1990).

W. Thulke | M. C. Amann

Continuously tunable laser diodes: Longitudinal versus transverse tuning scheme

IEEE J. on Selected Areas in Communications 8 (1990) 1169-1177 (invited).

M. C. Amann | W. Thulke

Continuously tunable metal-clad ridge-waveguide distributed feedback laser diode

Electronics Letters 26 (1990) 1845-1846.

T. Wolf | H. Westermeier | M. C. Amann

Excess linewidth broadening in wavelength-tunable laser diodes

Electronics Letters 26 (1990) 279-280.

M. C. Amann | R. Schimpe

Fabrication and lasing characteristics of L=1.56 µm tunable twin-guide (TTG) DFB lasers

IEE Proceedings Part J 137 (1990) 69-73.

C. Schanen | S. Illek | H. Lang | W. Thulke | M. C. Amann

Linewidth enhancement by shot noise In DFB lasers

13th European Workshop on Injection Lasers, Gent, Belgium (1990).

Linewidth enhancement in distributed-feedback semiconductor lasers

Electronics Letters 26 (1990) 569-571.

Novel transverse twin guide tunable semiconductor laser

European Conference on Optical Communications (ECOC), Amsterdam, The Netherlands (1990) 761-768 (invited).

Over 7 nm (875 GHz) continuous wavelength tuning by tunable twin-guide (TTG) laser diode

Electronics Letters 26 (1990) 46-47.

S. Illek | W. Thulke | C. Schanen | H. Lang | M. C. Amann

Recent progress in narrow-linewidth InGaAsP laser diodes and diode laser amplifiers

IEEE International Semiconductor Laser Conference (ISLC), Davos, Switzerland (1990) paper-A-2 (invited).

Segregation of Zinc in InGaAs/InP heterostructures during diffusion: Experiment and numerical modelling

Japanese Journal of Applied Physics 29 (1990) 810-812.

F. Dildey | M. C. Amann | R. Treichler

Tunable twin-guide laser diode with 7 nm continuous tuning range

Conference on Lasers and Electro-Optics (CLEO), Anaheim, USA (1990) paper-CTH-A2.

C. Schanen | S. Illek | H. Lang | W. Thulke | M. C. Amann

Wavelength tuning efficiency and spectral linewidth broadening in tunable twin-guide DFB laser diodes

IEEE International Semiconductor Laser Conference (ISLC), Davos, Switzerland (1990) paper-E-1.

S. Illek | W. Thulke | C. Schanen | K. Drögemüller | M. C. Amann

Wavelength-tunable DFB laser diodes

IEEE / LEOS annual meeting, Boston, USA (1990) paper-SDL 4 (invited).

1.55 µm tunable twin-guide laser with large continuous tuning range and narrow spectral linewidth

European Conference on Optical Communications (ECOC), Göteburg, Sweden (1989) paper PDB-1-46-49.

M. C. Amann | C. Schanen | S. Illek | H. Lang | W. Thulke

A novel approach for tunable laser diodes

Conference on Quantum Electronics and Laser Science, Baltimore, USA (1989) 278-279.

S. Illek | M. C. Amann | C. Schanen | W. Thulke

Continuously tunable single-frequency laser diode utilizing a transverse tuning scheme

Electronics Letters 25 (1989) 837-839.

M. C. Amann | S. Illek | C. Schanen | W. Thulke | H. Lang

Cost-216 comparative study of eigenmode analysis methods for single and coupled integrated optical waveguides

IEE Proceedings Part J 136 (1989) 273-280.

M. C. Amann | et al.

Current confinement and leakage currents in planar buried-ridge-structure laser diodes on n-substrate

IEEE Journal of Quantum Electronics 25 (1989) 1595-1602.

M. C. Amann | W. Thulke

Current confinement and reduction of shunt currents in BRS-type laser diodes

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1989).

M. C. Amann | B. Borchert | C. Huber | S. Illek | W. Thulke

Polarization dependent optical gain in ridge-waveguide lasers

Electronics Letters 25 (1989) 1017-1018.

B. Stegmueller | M. C. Amann

Reliable spin-on source for acceptor diffusion into III/V compound semiconductors

Journal of the Electrochemical Society 136 (1989) 2410-2413.

G. Franz | M. C. Amann

Replacement of magnesium in InGaAs/InP heterostructures during diffusion

Applied Physics Letters 55 (1989) 876-878.

F. Dildey | R. Treichler | M. C. Amann | M. Schier | G. Ebbinghaus

Transversely tunable laser diode with large continuous tuning range

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1989).

W. Thulke | C. Schanen | S. Illek | M. C. Amann

Tunable twin-guide laser: A novel laser diode with improved tuning performance

Applied Physics Letters 54 (1989) 2532-2533.

M. C. Amann | S. Illek | C. Schanen | W. Thulke

Tuning range and threshold current of the tunable twin-guide (TTG) laser

IEEE Photonics Technology Letters 1 (1989) 253-254.

M. C. Amann | S. Illek | C. Schanen | W. Thulke

Wavelength tunable single-mode metal-clad ridge-waveguide lasers for 1.55 µm wavelength region

Archiv für Elektronik und Übertragungstechnik (AEÜ) 43 (1989) 390-393.

M. C. Amann | G. G. Baumann | B. Borchert | H. Lang | H. Unzeitig

Cost-216 comparative study of eigenmode analysis methods for single and coupled integrated optical waveguides

European Conference on Optical Communications (ECOC), Brighton, United Kingdom (1988) 296-299.

M. C. Amann | et al.

Design and performance of InGaAsP/InP planar buried-ridge-structure lasers

IEEE International Semiconductor Laser Conference (ISLC), Boston, USA (1988) 214-215.

W. Thulke | A. Zach | B. Borchert | M. C. Amann

InGaAsP twin-stripe lasers with asymmetrical waveguide channels

IEE Proceedings Part J 135 (1988) 5-10.

T. Wolf | F. Kappeler | B. Stegmueller | M. C. Amann

InGaAsP/InP metal-clad ridge-waveguide (MCRW) lasers for optical transmission systems

Siemens Forschungs- und Entwicklungs- Berichte 17 (1988) 264-269.

G. G. Baumann | B. Stegmueller | M. C. Amann

Polarization competition in quasi-index-guided laser diodes

Journal of Applied Physics 63 (1988) 1824-1830.

M. C. Amann | B. Stegmueller

Polarization of L=1.55 µm InGaAsP ridge-waveguide lasers

Japanese Journal of Applied Physics 27 (1988) 104-106.

E. Hartl | M. C. Amann

Reliable InGaAsP/InP metal-clad ridge-waveguide lasers for high-temperature and high-power cw operation

13th Australian Conference on Optical Fibre Technology , Hobart, Australia (1988) 51-55.

B. Stegmueller | M. C. Amann | G. G. Baumann | H. Westermaier

Waveguiding analysis of mushroom-stripe laser diodes

IEE Proceedings Part J 135 (1988) 68-73.

Analysis of a PIN photodiode with integrated waveguide

Electronics Letters 23 (1987) 895-897.

Improved shallow p+-diffusion into InGaAsP by a new spin-on diffusion source

Journal of Applied Physics 62 (1987) 1541-1543.

M. C. Amann | G. Franz

Polarization competition in quasi-index-guided laser diodes

10th European Workshop on Laser Diodes, Tampere, Finland (1987).

B. Stegmueller | M. C. Amann

Polarization control in ridge-waveguide laser diodes

Applied Physics Letters 50 (1987) 1038-1040.

Polarization of metal-clad ridge-waveguide laser diodes

Semiconductor and Integrated Opto-Electronics Conference (SIOE), Cardiff, United Kingdom (1987).

B. Stegmueller | M. C. Amann

Thermal resistance of ridge-waveguide lasers mounted upside-down

Applied Physics Letters 50 (1987) 4-6.

Analytical solution for the current density distribution in multiple-stripe laser diodes

Applied Physics Letters 48 (1986) 1710-1712.

M. C. Amann | F. Kappeler

Calculation of metal-clad ridge-waveguide (MCRW) laser modes by mode coupling technique

IEEE Journal of Lightwave Technology 4 (1986) 689-693.

Condition for proper waveguiding in the metal-clad ridge-waveguide (MCRW) laser

Archiv für Elektronik und Übertragungstechnik (AEÜ) 40 (1986) 185-187.

High-performance InGaAsP/InP metal-clad ridge-waveguide (MCRW) lasers for long-wavelength optical communication systems

European Conference on Optical Communications (ECOC), Barcelona, Spain (1986) 85-88.

M. C. Amann | B. Stegmueller | G. G. Baumann | C. Hanke

High-speed InGaAsP/InP metal-clad ridge-waveguide (MCRW) laser diodes

EFOC/LAN, Amsterdam, The Netherlands (1986).

M. C. Amann | C. Hanke | B. Stegmueller

Influence of waveguide design on threshold current of InGaAsP/InP metal-clad ridge-waveguide lasers

IEEE International Semiconductor Laser Conference (ISLC), Kanazawa, Japan (1986) 224-225.

M. C. Amann | B. Stegmueller

InGaAsP/InP metal-clad ridge-waveguide (MCRW) lasers for optical communication systems

Opto, Paris, France (1986).

B. Stegmueller | M. C. Amann | C. Hanke

Low-threshold InGaAsP-InP metal-clad ridge-waveguide (MCRW) lasers for 1.3 µm wavelength

Japanese Journal of Applied Physics 25 (1986) 228-230.

M. C. Amann | B. Stegmueller

Narrow-stripe metal-clad ridge-waveguide lasers for 1.3 µm wavelength

Applied Physics Letters 48 (1986) 1027-1029.

M. C. Amann | B. Stegmueller

Rigorous waveguiding analysis of the separated multiclad-layer stripe-geometry laser

IEEE Journal of Quantum Electronics 22 (1986) 1992-1998.

Threshold current analysis of InGaAsP-InP ridge-waveguide lasers

IEE Proceedings Part J 133 (1986) 341-348.

M. C. Amann | B. Stegmueller

Lateral waveguiding analysis of 1.3 µm InGaAsP-InP metal-clad ridge-waveguide (MCRW) lasers

Archiv für Elektronik und Übertragungstechnik (AEÜ) 39 (1985) 311-316.

1.3 µm InGaAsP/InP metal-clad ridge-waveguide (MCRW) lasers: waveguide model and lasing characteristics

7th European Workshop on Injection Lasers , Schliersee, Germany (1984).

Laserdioden - Sendebauelemente hoher Lichtleistung für die optische Nachrichtenuebertragung

Telcom Report 6 (1983) 84-89.

M. C. Amann | K. Mettler | H. D. Wolf

GaInAsP/InP metal-clad ridge-waveguide laser for 1.3 µm

5th European Workshop on Injection Lasers, Saclay, France (1982).

Calculation of the effective refractive index step for the metal-cladded ridge-waveguide (MCRW) laser

Appl. Optics 20 (1981) 1483-1486.

M. C. Amann | B. Stegmueller

Low-threshold-current injection laser with built-in passive waveguiding

Topical Meeting on Integrated and Guided-Wave Optics, Incline Village, Nevada, USA (1980) MC 3-1-MC 3-4.

M. C. Amann | B. Stegmueller

New contacting system for low-expense GaAs-AlGaAs light sources

Frequenz 34 (1980) 343-346.

On the theory of the superluminescent diode: 1. stationary behaviour

Archiv für Elektronik und Übertragungstechnik (AEÜ) 34 (1980) 465-468.

J. Boeck | M. C. Amann

On the theory of the superluminescent diode: 2. small signal modulation behaviour

Archiv für Elektronik und Übertragungstechnik (AEÜ) 34 (1980) 514-516.

J. Boeck | M. C. Amann

Optical memory readout by superluminescent diode with integrated photodetector

Electronics Letters 16 (1980) 58-60.

M. C. Amann | A. Kuschmider | J. Boeck

AlGaAs/GaAs double-heterostructure superluminescent diodes for optical transmission systems

Frequenz 33 (1979) 278-283.

J. Boeck | M. C. Amann

High-efficiency superluminescent diodes for optical-fibre transmission

Electronics Letters 15 (1979) 41-42.

M. C. Amann | J. Boeck

Modulation bandwidth of superluminescent diodes for optical-fibre transmission

Archiv für Elektronik und Übertragungstechnik (AEÜ) 33 (1979) 64-66.

M. C. Amann | J. Boeck

New stripe-geometry laser with simplified fabrication process

Electronics Letters 15 (1979) 441-442.