Hi, my name is Daniel Rudolph and I am a PhD candidate in the Finley group. My present research focuses on (In)GaAs nanowires grown by molecular beam epitaxy on silicon. The goal is to exploit the InGaAs material system to implement axial In(Ga)As/GaAs heterostructures leading to highly controllable quantum dots within nanowires for applications in nanoelectronics, spintronics and quantum information processing.