Christian Grasse

Room:	S320
Category:	Doctoral Candidates
Phone:	12789
Email:	Christian.Grasse(at)wsi.tum.de

My work is focused on metalorganic vapor-phase epitaxy (MOVPE) growth of nanostructures and InP-based VCSEL and edge emitting devices. Therefore the optimization of new high performance active regions, the realization of improved DBR mirrors and the characterisation of new materials are some of my main tasks. All of these issues are directly connected to many different projects in our chair, like tunable VCSELs (Subtune project, contact also Tobias Gründl) and high-speed VCSEL (contact Michael Müller).

Publications

Continuously Tunable, Polarization Stable SWG MEMS VCSELs at 1.55 µm

IEEE Photonics Technology Letters, Vol. PP, No. 99, pp. 1, early access, 2013.

Online Reference

InP-Based Type-II Quantum Well Lasers and LEDs

Invited Paper: IEEE Journal of Selected Topics in Quantum Electronics

Recent results on long-wavelength VCSELs: Device structures, performance and applications

IEEE Photonics Conference (IPC), 2012

T. Gruendl | M. Mueller | C. Grasse | K. Vizbaras | M. C. Amann

Online Reference

Record Single-Mode, High-Power VCSELs by Inhibition of Spatial Hole Burning

Selected Topics in Quantum Electronics, IEEE Journal of, vol. PP, issue 99, p. 1, Feb 2013

Online Reference

Tweaking the Modal Properties of 1.3- Short-Cavity VCSEL—Simulation and Experiment

IEEE Photonics Technology Letters, vol. 25, no. 2, 140-143, Jan. 2013

M. Mueller | P. Debernardi | C. Grasse | T. Gruendl | M. C. Amann

Online Reference

1.3 µm short-cavity VCSELs enabling error-free transmission at 25 gbit/s over 25 km fibre link

Electronics Letters, vol. 48, no. 23, pp. 1487-1489, Nov. 2012

Online Reference

1.3um High-Power Short-Cavity VCSELs for High-Speed Applications

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 6 - 11 in San José, CA, USA (2012).

AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3 µm grown by MOVPE on InP substrate

Journal of Crystal Growth, 2012 (doi = 10.1016/j.jcrysgro.2012.06.051)

AlGaInAsPSb-based High-Speed Short-Cavity VCSEL with single-mode Emission at 1.3µm grown by MOVPE on InP substrate

16th International Conference on Metal Organic Vapor Phase Epitaxy 2012, Busan (South Korea)

Energy-efficient 1.3 µm short-cavity VCSELs for 30 Gb/s error-free optical links

23rd IEEE International Semiconductor Laser Conference (ISLC), 2012

Online Reference

Extending lasing wavelength on InP with GaAsSb / GaInAs type-II active regions

23^nd IEEE International Semiconductor Laser Conference (ISLC), San Diego (oral presentation)

GaInAs/GaAsSb-based type-II micro-cavity LED with 2-3 µm light emission grown on InP substrate

Journal of Crystal Growth, 2012 (doi = 10.1016/j.jcrysgro.2012.07.001)

GaInAs/GaAsSb-based type-II Micro-Cavity LED with 2-3µm light emission grown on InP substrate

16th International Conference on Metal Organic Vapor Phase Epitaxy 2012, Busan (South Korea)

GaSb- and InP-based devices for mid-infrared gas sensing

Invited Talk: International Workshop on Opportunities and Challenges in Mid-Infrared Laser-based Gas Sensing, Wroclaw, Poland

C. Grasse | K. Vizbaras | S. Sprengel | M. C. Amann

InP based type-II resonant cavity LEDs emitting up to 3.5 µm

27. DGKK Workshop, 6.-7.12.2012, Erlangen

InP-based 1.3 µm and 1.55 µm Short-Cavity VCSELs suitable for Telecom- and Datacom-Applications

Invited Paper: International Conference on Transparent Optical Networks (ICTON), July 1-5, Warwick, England, (2012)

M. Mueller | C. Grasse | M. C. Amann

InP-based 2.8-3.5 µm resonant-cavity light emitting diodes based on type-II transitions in GaInAs/GaAsSb heterostructures

Applied Physics Letters, vol. 101, No. 22, 221107, (2012)

Nonlinear GaInAs/AlInAs/InP quantum cascade laser sources for wavelength generation in the 2.7-70 µm wavelength range

Proc. of SPIE Photonics West, vol. 8268, San Francisco, Ca, USA (2012) (invited talk)

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Room-temperature type-I GaSb-based lasers in the 3.0 – 3.7 µm wavelength range

SPIE Photonics West 2012, San Francisco, California, 2012 (Invited talk)

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Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation

Physica Status Solidi (c), Vol. 9, No. 2, pp. 298-301, (2012)

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Terahertz quantum cascade laser sources based on Cherenkov Intra-cavity difference-frequency generation

Proc. of CLEO 2012, May 6-11, San Jose, CA, USA (2012)

Terahertz sources based on Cerenkov difference-frequency generation in quantum cascade lasers

Applied Physics Letters, vol. 100, No. 25, 251104, (2012)

Online Reference

Type-II InP-based lasers emitting at 2.55 µm

Applied Physics Letters, vol.100 (4), 041109, 2012

Type-II Quantum Wells for InP based mid-IR Devices

Mid-Infrared Optoelectronics: Materials and Devices, MIOMD-11, Sept. 2012, Chicago/Evanston

Winner of Best Student Paper Award 2012

T. Gruendl | C. Grasse | P. Wiecha | S. Sprengel | M. C. Amann

Type-II quantum wells on InP emitting up to 3.2µm

International Nano-Optoelectronics Workshop (iNow) 2012, Berkeley & Stanford, USA

Winner of "Best Poster Award 2012" (First Place)

102 nm Continuous Single-Mode Tuning with a Surface Micro-Machined tunable VCSEL

VCSEL-Day, European Workshop on VCSELs (oral presentation), May 12-13, Toulouse, (2011)

10Gbit/s Direct Modulated Long-Wavelength VCSELs for Upstream Hybrid TDMA/WDM PON

Photonics Ireland 2011, September 7-9, Dublin, Ireland, (2011).

Concepts and Realization of Widely Tunable InP VCSELs

International Nano-Optoelectronics Workshop (iNow) 2011, St. Petersburg & Würzburg, Russia & Germany

Winner of "Best Poster Award 2011" (First Place)

Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation

Journal of Crystal Growth 323 (2011) 480-483

Online Reference

Extending the spectral range of GaInAs/AlInAs/InP quantum cascade lasers by intracavity nonlinear frequency mixing

11^th International Conference on Intersubband Transitions in Quantum Wells (ITQW-2011), September 11-17, Badesi, Sardinia, (2011).

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First 102 nm Ultra-Widely Tunable MEMS VCSEL Based on InP

Winner of Best Student Paper Award 2011 (First Place)

IEEE Photonics 2011 Conference (IPC11) - (formerly Photonics Society Annual Meeting), paper ThDD1, Arlington, Virginia (USA), Oct. 2011

GaAsSb:C / GaInAs:Si tunnel junctions with AlGaInAsSb:C grading for InP-based high-speed VCSELs

European Workshop on Metalorganic Vapor Phase Epitaxy, June 5-8, 2011, Wroclaw, Poland (EWMOVPE XIV)

C. Grasse | T. Gruendl | M. Mueller | R. Meyer | M. C. Amann

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GaInAs/GaAsSb type-II quantum wells for up to 2.8µm light emission on InP substrate

26. DGKK Workshop, Stuttgart, Deutschland, 2011

High Speed Modulation of a 1.55 µm MEMS-tunable VCSEL

CLEO 2011 - Conference on Lasers and Electro Optics, BALTIMORE CONVENTION CENTER, Baltimore, Maryland, USA (2011)

High-power 200-fs Kerr-lens mode-locked Yb:YAG thin-disk oscillator

Optics Letters, Doc. ID: 156488, Posted: 14.11.2011

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High-Power BCB Encapsulated VCSELs based on InP

CLEO 2011 - Conference on Lasers and Electro Optics, BALTIMORE CONVENTION CENTER, Baltimore, Maryland, USA (2011)

InGaAs/AlInAs quantum cascade laser sources based on intracavity second harmonic generation in 2.6 - 3.6 micron range

Proc. of SPIE Photonics West, San Francisco, CA, USA, January, (2011) (invited talk)

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InP-based quantum cascade lasers with transversely integrated giant nonlinearity for wavelength generation in the 2.6 µm - 70 µm range by intracavity nonlinear frequency mixing

Proc. of the 40^th Freiburg Infrared Colloquium, February 16 -17, Freibug, Germany, (2011).

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Long-wavelength VCSELs for sensing applications

Invited Talk: SPIE Photonics West (2012), paper 8276-9, The Moscone Center, San Francisco, California (USA)

Low-Threshold 3 µm GaInAsSb/AlGaInAsSb Quantum-Well Lasers Operating in Continuous-Wave up to 64°C

International Conference on Indium Phosphide and Related Materials (IPRM), Berlin, Germany, 2011.

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Novel concept of a monolithically integrated MEMS VCSEL

IPRM 2011 - International Conference on Indium Phosphide and Related Materials, Berlin, Germany (2011)

Quantum cascade lasers with integrated nonlinearity for difference-frequency (THz) and second harmonic (near infrared) generation

Villa Conference on Interactions Among Nanostructures (VCIAN), April 21-25, Las Vegas, Nevada USA, (2011) (invited talk).

A. Vizbaras | C. Grasse | R. W. Adams | M. A. Belkin | M. C. Amann

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Room-temperature "lambda" ~ 2.7 µm quantum cascade laser sources based on intracavity second-harmonic generation

IEEE Journal of Quantum Electronics, Vol. 47, No. 5, pp. 691-697, (2011)

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Room-temperature GaSb-based quinternary type-I quantum-well lasers for the wavelength range from 3.3 to 3.6µm

European Semiconductor Laser Workshop 2011, Lausanne, Switzerland

C. Grasse | K. Vizbaras | A. Andrejew | S. Sprengel | M. C. Amann

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Short-wavelength injectorless quantum cascade laser based on second-harmonic generation

International Nano-Optoelectronics Workshop (iNow) 2011, St. Petersburg & Würzburg, Russia & Germany

Winner of "Best Poster Award 2011" (Third Place)

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Short-wavelength InP quantum cascade laser sources by quasi-phase-matched intracavity second-harmonic generation

International Symposium on Compound Semiconductors (ISCS-2011), May 22-26, Berlin, Germany, (2011)

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Surface Micromachined MEMS-tunable VCSELs with wide and fast wavelength tuning

Electronic Letters, Vol. 47, Issue 22, p. 1243-1244 (Oct. 2011)

Surface micromachined tunable 1.55µm-VCSEL with 102nm continous single-mode tuning

Optics Express 17336, vol. 19, No. 18, Aug. 2011

Terahertz quantum cascade sources based on intra-cavity frequency mixing in passive nonlinear sections

Proc. of CLEO 2011, May 1-6, Baltimore, Maryland, USA, (2011)

Terahertz sources based on intracavity frequency mixing in mid-infrared quantum cascade lasers with passive nonlinear sections

Applied Physics Letters, 98, 151114, (2011)

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THz Quantum cascade sources based on intra-cavity frequency mixing in passive nonlinear sections

36^th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-2011), October 2-7, Houston, TX, USA (2011).

2nd place in best student paper competition

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Up to 3 µm light emission on InP substrate using GaInAs/GaAsSb type-II quantum wells

Applied Physics Letters, vol. 99 (23), 220911, 2011

S. Sprengel | C. Grasse | K. Vizbaras | T. Gruendl | M. C. Amann

Online Reference

Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs

European Semiconductor Laser Workshop 2011, Lausanne, Switzerland

Widely Tunable 1.55 µm High-Speed, Short-Cavity MEMS VCSELs

Oral. presentation - European Semiconductor Laser Workshop ESLW 2011, Lausanne (Switzerland), Sep. 2011

BCB Encapsulated VCSEL Based on InP Suitable for MEMS Technology

VCSEL Day 2010, European workshop organized by SUBTUNE (Oral Presentation)

Location: IEIIT CNR, Politecnico di Torino, Italy

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Empirical modeling of the refractive index of (AlGaIn)As lattice matched to InP

Semiconductor Science and Technology 25 (2010) 045018

Online Reference

Evaluation of injectorless quantum cascade lasers by combining XRD- and laser-characterisation

ICMBE Conference, Berlin, 2010

Evaluation of injectorless quantum cascade lasers byc ombining XRD- and laser-characterisation

Journal of Crystal Growth, Volume 323, Issue 1, 15 May 2011, Pages 480–483

Online Reference

Growth and Characterisation of GaAsSb:C/GaInAs:Si Tunnel Junctions for InP-based Long-Wavelength VCSELs

25. DGKK-Workshop, Aachen 2010

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High-Speed and High-Power Vertical-Cavity Surface-Emitting Lasers based on InP suitable for Telecommunication and Gas Sensing

SPIE Remote Sensing, Security and Defence 2010, paper number 7828-6, Toulouse, Frankreich

Oral presentation

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High-Speed High-Power VCSELs based on InP

International Nano-Optoelectronics Workshop (iNow) 2010, Peking & Changchun, China

Winner of "Best Poster Award 2010" (First Place)

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Injectorless quantum cascade lasers for room-temperature short-wavelength emission by efficient second-harmonic generation

Proceedings of the 23^rd IEEE Photonics Society Annual Meeting, Denver, CO, USA pp. 367-368, (2010)

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Long-Wavelength BTJ-VCSEL with High-Contrast Grating

Proceedings of Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics Laser Science Conference (QELS), May 16 - 21 in San José (2010).

Long-Wavelength High-Contrast Grating Vertical-Cavity Surface-Emitting Laser

IEEE Photonics Journal, vol. 2, no. 3, pp. 415-422, June 2010

Terahertz sources based on difference-frequency generation near exit facets in dual-wavelength mid-infrared quantum cascade lasers

CLEO/QELS: 2010, May 16-21, San Jose, California, USA (2010).

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THz quantum cascade laser sources for room-temperature operation

The 40^th winter colloquium on the Physics of Quantum Electronics (PQE-2010), January 3-7, Snowbird, Utah, USA (invited talk) (2010).

Online Reference

Tunable long wavelength MEMS VCSELs

SUBTUNE Workshop, Laserzentrum Nuremberg (oral presentation)

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Tuneable VCSEL aiming for the application in interconnects and short haul systems

Invited talk: SPIE Photonics West 2011, 22 - 27 January, The Moscone Center, San Francisco, California, USA

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Widely Tunable High-Speed Bulk-Micromachined Short-Wavelength MEMS-VCSEL

22^nd IEEE International Semiconductor Laser Conference (ISLC), Kyoto, Japan (oral presentation)

Concept of a single photon source based on InP for emission at 1.55 µm

International Conference on Nanomaterials and Nanosystems (NanoMats2009), Istanbul, Turkey (2009)

Online Reference

Design and Technologies of High Speed MEMS-VCSEL Based on InP

VCSEL Day 2009, European Workshop organized by CHALMERS University of Technology, Gothenburg, Sweden

T. Gruendl | C. Grasse | G. Boehm | R. Meyer | M. C. Amann

Planarization of overgrown tunnel junctions for InP-based VCSEL by MOVPE

European Workshop on Metalorganic Vapor Phase Epitaxy 2009 (EWMOVPE XIII), Ulm, Germany

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Growth of antimonides by MOVPE

DPG Fruehjahrstagung, Berlin, Germany, 2008

C. Grasse | R. Meyer | G. Boehm | M. C. Amann

Growth of various antimony-containing alloys by MOVPE

Journal of Crystal Growth 310, 4835-4838 (2008)

C. Grasse | G. Boehm | U. Breuer | R. Meyer | M. C. Amann

Growth of various antimony-containing alloys by MOVPE

14th International Conference on MOVPE, Metz, France (2008)

C. Grasse | G. Boehm | U. Breuer | R. Meyer | M. C. Amann

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Micromachined tunable vertical-cavity surface-emitting lasers with narrow linewidth for near infrared gas detection

Proc. SPIE, Vol. 7266, 72660O (2008), Conference on Optomechatronic Technologies, San Diego, USA, 2008

Online Reference

Small Signal Dynamics of an Electrically-Pumped Long-Wavelength Tunable VCSEL

IEEE 21st International Semiconductor Laser Conference (ISLC), Sorrento, Italy (2008)

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News at the WSI

01 Apr 2013

Prof. Dr. Jonathan J. Finley new head of chair E24 - Prof. Dr. Gerhard Abstreiter new director of TUM-IAS more

07 Jan 2013

Bavarian Academy of Sciences awards Robert-Sauer prize to Dr. Ulrich Rant more

29 Oct 2012

Anouncement: A scientific symposium in memory of Professor Dr. Frederick Koch on November 23. more

25 Sep 2012

ERC Grant for Prof. Alexander Holleitner (WSI and Physik-Department, TUM) more

14 Sep 2012

Best Student paper award for Tobias Gruendl more