Dr. Stefan Birner, MPhys

Room:	S204
Category:	Visiting Scientists
Phone:	11530
Email:	Stefan.Birner(at)wsi.tum.de

Dr. rer. nat., Technische Universität München
MPhys, University of Exeter (UK)

Stefan Birner is no longer working at the Walter Schottky Institute.
He moved to the nextnano GmbH.

Research

The topic of my PhD thesis was part of a bigger project which aimed to create a simulator for three-dimensional nano devices, called nextnano³. In 2004 I received a grant from the Federal Ministry of Education and Research (Bundesministerium für Bildung und Forschung, EXIST-SEED program "University-based start-ups") to write a business plan for the nextnano³ software. In 2012 I finally founded the nextnano GmbH .

Google scholar: Citation index
My private website: www.stefan-birner.de

Collaborations

Nanosystems Initiative Munich (Cluster of Excellence)
SFB IR-ON: Infrared Optical Nanostructures (Austria)
Dr. Michael Povolotskyi, Purdue University, West Lafayette, IN (USA)
Dr. Tillmann Kubis, Purdue University, West Lafayette, IN (USA)

Teaching

SS 2010: Übung zu Theoretische Physik 3 (Quantenmechanik 1, Prof. M. Ratz)
WS 2008/2009: Übung zu Theoretische Physik 2 (Elektrodynamik, Prof. Harald Friedrich)
SS 2008: Übung zu Theoretische Physik 3 (Quantenmechanik 1, Prof. Walter Schirmacher)
SS 2003: Übung zu Theoretische Physik 1 (Mechanik, Prof. Peter Ring)
WS 2002/2003: Tutorial for Theoretical Physics 1 (Classical Mechanics, Prof. Peter Vogl)
SS 2002: Tutorial for Theoretical Solid State Physics (Prof. Peter Vogl)
WS 2001/2002: Übung zu Theoretische Physik 3BC (Elektrodynamik, Prof. Harald Friedrich)

Publications

Electron heating in quantum-dot structures with collective potential barriers

International Journal of High Speed Electronics and Systems 20, 143 (2011)

L. H. Chien | A. Sergeev | N. Vagidov | V. Mitin | S. Birner

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Hydrophobic Interaction and Charge Accumulation at the Diamond-Electrolyte Interface

Physical Review Letters 106, 196103 (2011)

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InAs/GaSb Type II Superlattices as Low-Temperature Thermoelectrics

AIP Conf. Proc. 1416, 142 (2011)

C. Zhou | S. Birner | M. Norko | Y. Tang | M. Grayson

Online Reference

Modeling of semiconductor nanostructures and semiconductor–electrolyte interfaces

Selected Topics of Semiconductor Physics and Technology (G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, eds.), Vol. 135,
Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München e.V., München, 239 pp. (2011)
ISBN 978-3-941650-35-0

S. Birner

Online Reference

Valley degeneracy in biaxially strained aluminum arsenide quantum wells

Phys. Rev. B 84, 125319 (2011)

S. Prabhu-Gaunkar | S. Birner | S. Dasgupta | C. Knaak | M. Grayson

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Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

J. Appl. Phys. 108, 083510 (2010)

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Graphene Solution-Gated Field-Effect Transistor Array for Sensing Applications

Advanced Functional Materials 20, 3117–3124 (2010)

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Ballistic quantum transport using the contact block reduction (CBR) method

Journal of Computational Electronics 8 (3), 267-286 (2009)
DOI 10.1007/s10825-009-0293-z

S. Birner | C. Schindler | P. Greck | M. Sabathil | P. Vogl

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Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration

Microelectronics Journal 39, 485 (2008)

Dr. Stefan Birner, MPhys

Research

Collaborations

Teaching

Publications

Electron heating in quantum-dot structures with collective potential barriers

Hydrophobic Interaction and Charge Accumulation at the Diamond-Electrolyte Interface

InAs/GaSb Type II Superlattices as Low-Temperature Thermoelectrics

Modeling of semiconductor nanostructures and semiconductor–electrolyte interfaces

Valley degeneracy in biaxially strained aluminum arsenide quantum wells

Electronic and optical properties of GaN/AlN quantum dots on Si(111) subject to in-plane uniaxial stresses and variable excitation

Graphene Solution-Gated Field-Effect Transistor Array for Sensing Applications

Ballistic quantum transport using the contact block reduction (CBR) method

Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Simulation of quantum cascade lasers - optimizing laser performance

Simulation zur Optimierung von Quantenkaskadenlasern

Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor

nextnano: General Purpose 3-D Simulations

Three-Dimensional Si/Ge Quantum Dot Crystals

Enhancement of free-carrier screening due to tunneling in coupled asymmetric GaN/AlGaN quantum discs

Modeling of semiconductor nanostructures with nextnano³

The 3D nanometer device project nextnano: Concepts, methods, results

Two-photon excitation spectroscopy of coupled asymmetric GaN/AlGaN quantum discs

Bound-to-bound and bound-to-free transitions in surface photovoltage spectra: Determination of the band offsets for InxGa1-xAs and InxGa1-xAs1-yNy quantum wells

Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer

Modeling of Purely Strain-Induced CEO GaAs/In(_.16)Al(_.84)As Quantum Wires

Modeling the nonlinear photoluminescence intensity dependence observed in asymmetric GaN quantum discs with AlGaN barriers

Purely strain induced GaAs/InAlAs single quantum wires exhibiting strong charge carrier confinement

Advances in the theory of electronic structures of semiconductors

Electronic and optical properties of [N11] grown nanostructures

Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces

Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth

Tuning the Piezoelectric Fields in Quantum Dots: Microscopic Description of Dots Grown on (N11) Surfaces

Two-dimensional quantum effects and structural optimization of FinFETs with two-dimensional Poisson-Schrödinger solver

Two-dimensional quantum-mechanical modeling for strained silicon channels of double-gate MOSFETs

Efficient computational method for ballistic currents and application to single quantum dots

Microscopic description of nanostructures grown on (N11) surfaces

nextnano³ - Software für neuartige Nano Devices

Theory of vertical and lateral Stark shifts of excitons in quantum dots

Accelerated dynamics simulations of interstitial-cluster growth

Thermodynamic processes of Si-interstitial clusters

News at the WSI

01 Apr 2013

07 Jan 2013

29 Oct 2012

25 Sep 2012

14 Sep 2012