Fabian Schuster

 
Year: 2015

Nanostructured wide-bandgap semiconductors for optoelectronic applications and quantum information processing

  • Plasma-assisted molecular beam epitaxy (PAMBE) of wide-bandgap semiconductors (III-nitrides and II-oxides)
  • Self-assembled GaN nanowires/discs on diamond and silicon
  • Selective area epitaxy of nanowires
  • Nanowire doping
  • µ-Photoluminescence and µ-Raman spectroscopy mapping of single Nanowires
  • Structural characterization by scanning electron microscopy (SEM) and high-resolution X-ray diffraction (HRXRD)
  • Investigation of new concepts for light-emitting diodes in the UV spectral range

Figure 1: GaN nanowires on diamond (see Nano Lett. 12, 2199 (2012))

Publications

GaN nanowires on diamond

Mat. Sci. Semicon. Proc. 48, 65-78 (2016)

M. Hetzl | F. Schuster | A. Winnerl | S. Weiszer | M. Stutzmann

Online Reference

Doped GaN nanowires on diamond: Structural properties and charge carrier distribution

J. Appl. Phys. 117, 044307 (2015)

F. Schuster | A. Winnerl | S. Weiszer | M. Hetzl | J. A. Garrido | M. Stutzmann

Online Reference

Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

J. Appl. Phys. 118, 154303 (2015)

F. Schuster | M. Hetzl | S. Weiszer | M. Wolfer | H. Kato | C. E. Nebel | J. A. Garrido | M. Stutzmann

Online Reference

Position-Controlled Growth of GaN Nanowires and Nanotubes on Diamond by Molecular Beam Epitaxy

Nano Lett. 15, 1773 (2015)

F. Schuster | M. Hetzl | S. Weiszer | J. A. Garrido | M. de la Mata | C. Magen | J. Arbiol | M. Stutzmann

Online Reference

Heteroepitaxial ZnO Films on Diamond: Optoelectronic Properties and the Role of Interface Polarity

J. Appl. Phys. 115, 213508 (2014)

F. Schuster | M. Hetzl | C. Magén | J. Arbiol | J. A. Garrido | M. Stutzmann

Online Reference

Influence of substrate material, orientation, and surface termination on GaN nanowire growth

J. Appl. Phys. 116, 054301 (2014)

F. Schuster | S. Weiszer | M. Hetzl | A. Winnerl | J. A. Garrido | M. Stutzmann

Online Reference

p-GaN/n-ZnO Heterojunction Nanowires: Optoelectronic Properties and the Role of Interface Polarity

ACS Nano 8, 4376 (2014)

F. Schuster | B. Laumer | R. Zamani | C. Magén | J. R. Morante | J. Arbiol | M. Stutzmann

Trade-off between morphology, extended defects and compositional fluctuation induced carrier localization in high In-content InGaN

J. Appl. Phys. 116, 053501 (2014).

J. Zi-Jian Ju | B. Loitsch | T. Stettner | F. Schuster | M. Stutzmann | G. Koblmueller

Online Reference

Accurate determination of optical bandgap and lattice parameters of Zn1–xMgxO epitaxial films grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

J. Appl. Phys. 113, 233512 (2013)

B. Laumer | F. Schuster | M. Stutzmann | A. Bergmaier | G. Dollinger | M. Eickhoff

Online Reference

Reduced threading dislocation densities densities in high-T/N-rich grown InN films by plasma-assisted molecular beam epitaxy

Appl. Phys. Lett. 102, 051916 (2013).

B. Loitsch | F. Schuster | M. Stutzmann | G. Koblmueller

Online Reference

Growth study of nonpolar Zn1-xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy

Appl. Phys. Lett. 101, 122106 (2012)

B. Laumer | F. Schuster | M. Stutzmann | A. Bergmaier | G. Dollinger | S. Vogel | K. Gries | K. Volz | M. Eickhoff

Online Reference

Self-assembled GaN nanowires on diamond

Nano Letters 12, 2199 (2012)

F. Schuster | F. Furtmayr | R. Zamani | C. Magen | J. R. Morante | J. Arbiol | J. A. Garrido | M. Stutzmann

Online Reference

ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers

J. Appl. Phys. 111, 113504 (2012)

B. Laumer | F. Schuster | T. Wassner | M. Stutzmann | M. Rohnke | J. Schörmann | M. Eickhoff

Online Reference

Exciton confinement in homo- and heteroepitaxial ZnO/Zn1-xMgxO quantum wells with x<0.1

J. Appl. Phys. 110, 093513 (2011)

B. Laumer | T. Wassner | F. Schuster | M. Stutzmann | J. Schörmann | M. Rohnke | A. Chernikov | V. Bornwasser | M. Koch | S. Chatterjee | M. Eickhoff

Online Reference

TUM Technische Universität München TUM Technische Universität München Physik Department Elektrotechnik und Informationstechnik TUM Technische Universität München
 

Events & News

17 Jan 2018

ERC Consolidator Grant for Gregor Koblmüller   more

10 Aug 2017

Best Poster Awards for Ganpath Veerabathran and Alexander Andrejew at iNOW 2017   more

27 Jun 2017

Best Poster Award at Nanowire Week for Jochen Bissinger   more

15 Mar 2017

Dr. Kai Müller admitted to the “Junges Kolleg” of the Bavarian Academy of Sciences   more

27 Feb 2017

Two-photon pulses from a single two-level system   more

Seminars

January 26, 2018

Reliability of hexagonal boron nitride dielectric stacks for CMOS applications   more

January 23, 2018

Helical states, spin-orbit coupling, and phase-coherent transport in InAs nanowires   more

January 16, 2018

New insights into novel (and conventional) materials using polarization-sensitive infrared magneto-spectroscopy   more